Quantum dot hybrid integrated multicolor display and method of manufacturing the same

Abstract

This invention discloses a quantum dot hybrid integrated multicolor display, comprising a CMOS wafer substrate, an anode via, a light-emitting unit, a filler layer, and a cover glass. The CMOS wafer substrate contains tungsten vias, and the anode vias are disposed within the CMOS wafer substrate, electrically connected to a CMOS wafer driving circuit through the tungsten vias. The anode vias extend through the surface of the CMOS wafer substrate. A light-emitting unit is disposed on the surface of the anode via on the CMOS wafer substrate, and a driving current signal is provided to the light-emitting unit through the anode via. The filler layer, formed by OC adhesive, covers the CMOS wafer substrate and the surface of the light-emitting unit. The cover glass seals the entire device. This invention avoids the challenges of micro-LED colorization and the immature blue light lifetime efficiency of quantum dots by combining quantum dots with blue LEDs. This quantum dot hybrid integrated multicolor display has a simple structure, is easy to use, has a high manufacturing yield, and exhibits good luminous effect. A manufacturing method for this quantum dot hybrid integrated multicolor display is also disclosed.

Description

Technical Field

[0001] This invention belongs to the field of micro-display technology, specifically relating to a quantum dot hybrid integrated multicolor display and its manufacturing method. Background Technology

[0002] Microdisplays are currently the visual entry point for the popular "metaverse" concept. However, the mainstream technology currently used in microdisplays is silicon-based liquid crystal, which displays information by switching liquid crystals on and off. This results in a slow response time and difficulty in achieving high resolution, leading to drawbacks such as the screen-door effect, making it unsuitable for prolonged wear in the more advanced "metaverse." While micro-OLED, or silicon-based OLED technology, has entered mass production, it still suffers from disadvantages such as low brightness and low luminous efficiency. Micro-LED microdisplays are considered the most suitable for "metaverse" applications; however, achieving colorization remains a challenging problem. Whether applied to conventional displays or high-pixel-density microdisplays, micro-LED microdisplays suffer from a complex manufacturing process that leads to low product yields, making them unsuitable for mass production.

[0003] A search revealed that Chinese invention patent CN201910816511, published on December 13, 2019, discloses a display device based on phase change materials and quantum dots. The device includes a display unit comprising a multicolor quantum dot backlight and a phase change filter. The multicolor quantum dot backlight includes a substrate and a multicolor quantum dot light-emitting component, which is disposed on the upper surface of the substrate to emit polychromatic light. The phase change filter includes, from bottom to top, an isolation layer, a first FP resonant cavity, a phase change material layer, and a second FP resonant cavity. Voltage is applied to the phase change material layer for electrical stimulation or laser stimulation. The transmittance change of the phase change material layer during its transition between amorphous and crystalline states filters the polychromatic light emitted by the multicolor quantum dot light-emitting component, thereby obtaining monochromatic light of the desired wavelength and intensity, and thus achieving color display. However, the lifetime and efficiency of the blue material in the quantum dot polychromatic light still cannot meet the industry's cost and performance requirements, failing to solve the aforementioned technical problems. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the present invention aims to provide a quantum dot hybrid integrated multicolor display that is simple in structure, easy to use, has a high manufacturing yield, and excellent luminous effect. The invention also provides a manufacturing method for this quantum dot hybrid integrated multicolor display, which is simple and easy to implement. This invention avoids the challenges of micro-LED colorization and the immature blue light lifetime efficiency of quantum dots by combining quantum dots with blue LEDs.

[0005] To achieve the above objectives, the technical solution of the present invention is as follows: a quantum dot hybrid integrated multicolor display, comprising a CMOS wafer substrate, an anode via, and a light-emitting unit. The CMOS wafer substrate contains tungsten vias, and the anode vias are disposed within the CMOS wafer substrate. The anode vias are electrically connected to a driving circuit within the CMOS wafer substrate through the tungsten vias, and the anode vias extend through to the surface of the CMOS wafer substrate. A light-emitting unit is disposed on the surface of the anode vias on the CMOS wafer substrate, and a driving current signal is provided to the light-emitting unit through the anode vias. The quantum dot hybrid integrated multicolor display also includes a filler layer and a cover glass. The filler layer is formed by OC adhesive and covers the surface of the CMOS wafer substrate and the light-emitting unit. The cover glass seals the entire device.

[0006] Furthermore, the light-emitting unit includes an LED blue light-emitting unit, a quantum dot first light-emitting unit, and a quantum dot second light-emitting unit. The quantum dot first light-emitting unit is configured to emit green light and the quantum dot second light-emitting unit emits red light, or the quantum dot first light-emitting unit emits red light and the quantum dot second light-emitting unit emits green light; or only the quantum dot first light-emitting unit and the LED blue light-emitting unit are configured to form a two-color light-emitting unit, with the quantum dot first light-emitting unit emitting green or red light; or only the quantum dot second light-emitting unit and the LED blue light-emitting unit are configured to form a two-color light-emitting unit, with the quantum dot second light-emitting unit emitting green or red light.

[0007] Furthermore, the first quantum dot light-emitting unit includes, from bottom to top, a first light-emitting unit anode, a first light-emitting unit hole injection layer, a first light-emitting unit hole transport layer, a quantum dot first light-emitting layer, a first light-emitting unit electron transport layer, and a first light-emitting unit cathode layer; the second quantum dot light-emitting unit includes, from bottom to top, a second light-emitting unit anode, a second light-emitting unit hole injection layer, a second light-emitting unit hole transport layer, a quantum dot second light-emitting layer, a second light-emitting unit electron transport layer, and a second light-emitting unit cathode layer.

[0008] Furthermore, on the CMOS wafer substrate, LED blue light-emitting units, quantum dot first light-emitting units, and quantum dot second light-emitting units are respectively disposed on the surface of the anode vias arranged side by side, and a spacing is provided between the LED blue light-emitting units, the quantum dot first light-emitting units, and the quantum dot second light-emitting units.

[0009] Furthermore, a transparent conductive thin film ITO is deposited on the entire CMOS wafer substrate and the LED blue light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit to form a common cathode; one or more metals selected from Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited on the surface of the transparent conductive thin film ITO in the region between the LED blue light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit to form one or more metal layers to form interconnect electrodes.

[0010] Based on the above-mentioned quantum dot hybrid integrated multicolor display, the present invention also relates to a method for manufacturing a quantum dot hybrid integrated multicolor display, the method comprising the following steps:

[0011] S1 provides a CMOS wafer substrate and a blue LED epitaxial wafer. The CMOS wafer substrate and the blue LED epitaxial wafer are metal bonded together, and then the LED epitaxial wafer substrate is removed. Pixel patterning is performed through photolithography and etching processes to form a silicon-based CMOS wafer with blue light-emitting units. The metal on the surface of the CMOS wafer is etched using the IBE process, leaving only the metal at the positions of the blue LED light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit. The size of each light-emitting unit is 0.1-30um, and the spacing between the light-emitting units is 0.01-5um.

[0012] S2 uses a sputer process to deposit ITO, and forms an ITO layer on the metal at the location of the first and second quantum dot light-emitting units through photolithography and etching processes.

[0013] S3, PEDOT:PSS is deposited on the surface of the ITO layer by solution spin coating or vacuum evaporation process to form a hole injection layer with a thickness of 30nm;

[0014] S4. A hole transport layer with a thickness of 30 nm is formed by depositing TFB on the hole injection layer using a solution method or vacuum evaporation process.

[0015] S5, DICTRz:CdSe / CdS (the emission wavelength of the red quantum dot is 630nm) is deposited at the position of the first or second quantum dot emission unit on the hole transport layer using a solution vacuum evaporation process to form a quantum dot emission layer with a thickness of 40nm.

[0016] S6. CdSe / CdS or InP quantum dots (the emission wavelength of green quantum dots is 540nm) are deposited at the position of the second luminescent unit or the position of the first luminescent unit of quantum dots on the hole transport layer using a solution vacuum evaporation process to form a quantum dot luminescent layer with a thickness of 40nm.

[0017] S7, ZnO is deposited on the light-emitting layer using a solution method or vacuum evaporation process to form an electron transport layer with a thickness of 30nm;

[0018] S8 uses photolithography and organic solvent chemical etching to remove the material deposited by the subsequent process of S2 on the surface of the LED blue light-emitting unit. It can also simultaneously remove the deposited material between the LED blue light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit, thus forming the first quantum dot light-emitting unit and the second quantum dot light-emitting unit.

[0019] S9 uses a sputer process to deposit a 20-1000nm thick transparent conductive film ITO on the entire CMOS wafer substrate and the LED blue light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit to form a common cathode.

[0020] Furthermore, an LED blue light-emitting unit is disposed on the surface of the anode via on the CMOS wafer substrate, and a passivation layer is deposited on the sidewall of the LED blue light-emitting unit by PECVD or ALD. A quantum dot first light-emitting unit and a quantum dot second light-emitting unit are disposed on the upper part of the LED blue light-emitting unit, and a gap is provided between the quantum dot first light-emitting unit and the quantum dot second light-emitting unit.

[0021] Furthermore, one or more of the following metals are deposited on the upper surface of the LED blue light-emitting unit to form a transparent cathode layer of the LED blue light-emitting unit: ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni. One or more of the following metals are deposited on the surface of the cathode layer as a reflective layer: DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni. The length of the reflective layer is less than the length of the LED blue light-emitting unit. The first quantum dot light-emitting unit and the second quantum dot light-emitting unit are located on the upper surface of the reflective layer. The anodes of the first quantum dot light-emitting unit and the second quantum dot light-emitting unit are electrically connected to the anode vias on the CMOS wafer substrate, respectively.

[0022] Furthermore, one or more of the following metals, ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni, are deposited on the outer surface of the LED blue light-emitting unit to form the cathode of the LED blue light-emitting unit. Reflective lenses are respectively set on the left and right sides of the LED blue light-emitting unit. A transparent conductive film ITO is deposited on the entire CMOS wafer substrate and the first quantum dot light-emitting unit, the second quantum dot light-emitting unit, and the cathode of the LED blue light-emitting unit as a common cathode. One or more of the following metals, Mg, Ag, Au, Al, Cu, Cr, and Ti, are deposited on the surface of the transparent conductive film ITO between the first quantum dot light-emitting unit and the second quantum dot light-emitting unit to form one or more metal layers to form interconnect electrodes.

[0023] Based on the above-mentioned quantum dot hybrid integrated multicolor display, the present invention also relates to a method for manufacturing a quantum dot hybrid integrated multicolor display, the method comprising the following steps:

[0024] S1 provides a CMOS wafer substrate and a blue LED epitaxial wafer. The CMOS wafer and the blue LED epitaxial wafer are metal-bonded, and then the LED epitaxial wafer substrate is removed. Pixel patterning is performed through photolithography and etching processes to form a silicon-based CMOS wafer with blue light-emitting units. The metal on the surface of the CMOS wafer is etched through IBE process, leaving only the metal located in the blue LED light-emitting units. A 500nm thick SiO2 is deposited on the sidewall of the blue light-emitting units through ALD or PECVD, and then the first passivation layer is formed through photolithography and dry etching processes.

[0025] S2, by using a sputer to deposit one or more metals selected from ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni at a wavelength of 50-1000 nm on the upper surface of the LED blue light-emitting unit 3 as a transparent cathode layer of the LED blue light-emitting unit;

[0026] S3, deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni as a reflective layer on the surface of the transparent cathode layer. After photolithography and etching, the length of the reflective layer is made to be about 0.5-30um shorter than the length of the LED blue light unit.

[0027] S4, reflective lenses are set on the left and right sides of the LED blue light-emitting unit. The reflective lenses can be made by etching Si oxide nitride and then depositing reflective metal on the surface.

[0028] S5. When the light emitted by the LED blue light-emitting unit is reflected between the anode of the LED blue light-emitting unit and the reflective layer, until it is transmitted to the surface of the reflective lens, the reflective lens can shoot the incident light out of the upper surface in parallel;

[0029] S6. 50-100nm SiO2 is fabricated on the surface of the reflective layer using PECVD, photolithography, and etching processes;

[0030] S7. One or more metals selected from Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the upper surface of the outer cathode layer of the LED blue light unit through processes such as photolithography, deposition, and etching to form the cathode of the LED blue light-emitting unit;

[0031] S8. One or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the SiO2 surface using processes such as photolithography, deposition, and etching to fabricate the anodes of the first and second quantum dot light-emitting units, respectively. The anodes of the first and second quantum dot light-emitting units are connected to the tungsten holes on both sides of the LED blue light unit.

[0032] S9 is formed by depositing a 500nm thick SiO2 layer through ALD or PECVD, and then etching away the SiO2 layer at the anode position of the first and second quantum dot light-emitting units through photolithography and dry etching processes, covering only the positions other than the first and second quantum dot light-emitting units.

[0033] S10, PEDOT:PSS is deposited on the anode surface of the first quantum dot light-emitting unit and the second quantum dot light-emitting unit by solution spin coating or vacuum evaporation process to form a hole injection layer with a thickness of 30nm, thus fabricating the hole injection layer of the first light-emitting unit and the hole injection layer of the second light-emitting unit.

[0034] S11, deposit TFB on the hole injection layer using solution method or vacuum evaporation process to form a hole transport layer with a thickness of 30nm, and fabricate the first light-emitting unit hole transport layer and the second light-emitting unit hole transport layer.

[0035] S12, DICTRz:CdSe / CdS (the emission wavelength of the red quantum dot is 630nm) is deposited at the position of the first or second quantum dot emission unit on the hole transport layer using a solution vacuum evaporation process to form a quantum dot emission layer with a thickness of 40nm.

[0036] S13, CdSe / CdS or InP quantum dots (the emission wavelength of green quantum dots is 540nm) are deposited at the position of the second luminescent unit or the position of the first luminescent unit of quantum dots on the hole transport layer using a solution vacuum evaporation process to form a quantum dot luminescent layer with a thickness of 40nm.

[0037] S14, ZnO is deposited on the light-emitting layer using a solution method or vacuum evaporation process to form an electron transport layer with a thickness of 30nm;

[0038] S15 uses a sputer process to deposit a 20-1000nm thick transparent conductive film ITO on the entire CMOS wafer substrate and the cathodes of the first quantum dot light-emitting unit, the second quantum dot light-emitting unit, the blue LED light-emitting unit, and the cathode ring. This allows the cathode ring to simultaneously power the blue LED light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit, forming a common cathode.

[0039] The advantages of using the technical solution of this invention are:

[0040] 1. This invention avoids the challenges of micro-LED colorization and the immature blue light lifespan efficiency of quantum dots by combining quantum dots with blue LEDs. The quantum dot hybrid integrated multicolor display has a simple structure, is easy to use, has a high manufacturing yield, and has good light emission effect. Furthermore, a vertical quantum dot hybrid integrated multicolor display structure is proposed, which can further improve the display PPI (pixel density).

[0041] 2. This invention integrates mature inorganic GaN system blue LED with red and green quantum dot light-emitting system technology to form a color micro-display device, overcoming the technical defect of low efficiency of existing GaN red light and achieving high-efficiency display of inorganic LED micro-display device. Attached Figure Description

[0042] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:

[0043] Figure 1 This is a cross-sectional schematic diagram of a quantum dot hybrid integrated multicolor display according to Embodiment 1 of the present invention;

[0044] Figure 2 This is a cross-sectional schematic diagram of another arrangement of the quantum dot hybrid integrated multicolor display according to Embodiment 1 of the present invention;

[0045] Figure 3 This is a top view schematic diagram of the quantum dot hybrid integrated multicolor display stacked structure of Embodiment 2 of the present invention;

[0046] Figure 4 for Figure 3 Schematic diagram of the section along the middle BB';

[0047] Figure 5 for Figure 3 Schematic diagram of the AA' section along the middle;

[0048] Figure 6 This is a schematic diagram of a quantum dot electroluminescent unit structure.

[0049] The labels in the above figures are as follows: 1. CMOS wafer substrate; 2. Anode via; 3. LED blue light-emitting unit; 4. Quantum dot first light-emitting unit; 401. Anode of the first light-emitting unit; 402. Hole injection layer of the first light-emitting unit; 403. Hole transport layer of the first light-emitting unit; 404. Quantum dot first light-emitting layer; 405. Electron transport layer of the first light-emitting unit; 406. Cathode layer of the first light-emitting unit; 5. Quantum dot second light-emitting unit; 501. Anode of the second light-emitting unit; 502. Hole injection layer of the second light-emitting unit; 503. Hole transport layer of the second light-emitting unit; 504. Quantum dot second light-emitting layer; 505. Electron transport layer of the second light-emitting unit; 506. Cathode layer of the second light-emitting unit; 6. Filling layer; 7. Filling layer; 8. Reflective lens; 9. Passivation layer; 10. Cathode of the LED blue light-emitting unit; 11. Reflective layer. Detailed Implementation

[0050] In this invention, it should be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "planar direction," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the invention.

[0051] like Figures 1 to 6 As shown, a quantum dot hybrid integrated multicolor display includes a CMOS wafer substrate 1, an anode via 2, and a light-emitting unit. The CMOS wafer substrate 1 has tungsten vias, and the anode via 2 is disposed inside the CMOS wafer substrate 1. The anode via 2 is electrically connected to a driving circuit within the CMOS wafer substrate 1 through the tungsten vias, and the anode via 2 extends through to the surface of the CMOS wafer substrate. A light-emitting unit is disposed on the surface of the anode via 2 on the CMOS wafer substrate 1, and a driving current signal is provided to the light-emitting unit through the anode via 2. The quantum dot hybrid integrated multicolor display also includes a filler layer 6 and a cover glass 7. The filler layer 6 is formed by OC adhesive and covers the surfaces of the CMOS wafer substrate 1 and the light-emitting unit. The cover glass 7 seals the entire device. This invention uses a combination of quantum dots and blue LEDs to avoid the challenges of micro-LED colorization and the immature technical shortcomings of quantum dot blue light lifetime efficiency. This quantum dot hybrid integrated multicolor display has a simple structure, is easy to use, has a high manufacturing yield, and provides good luminous effect.

[0052] The light-emitting unit includes an LED blue light-emitting unit 3, a quantum dot first light-emitting unit 4, and a quantum dot second light-emitting unit 5. The quantum dot first light-emitting unit 4 is configured to emit green light and the quantum dot second light-emitting unit 5 emits red light, or the quantum dot first light-emitting unit 4 emits red light and the quantum dot second light-emitting unit 5 emits green light; or only the quantum dot first light-emitting unit 4 and the LED blue light-emitting unit 3 are configured to form a two-color light-emitting unit, with the quantum dot first light-emitting unit 4 emitting green or red light; or only the quantum dot second light-emitting unit 5 and the LED blue light-emitting unit 3 are configured to form a two-color light-emitting unit, with the quantum dot second light-emitting unit 5 emitting green or red light.

[0053] Example 1

[0054] On a CMOS wafer substrate 1, LED blue light-emitting units 3, quantum dot first light-emitting units 4, and quantum dot second light-emitting units 5 are respectively disposed on the surface of parallel anode vias 2, with spacing between them. The size of the LED blue light-emitting units 3, quantum dot first light-emitting units 4, and quantum dot second light-emitting units 5 is 0.1-10 μm, and the spacing between them is 0.01-10 μm. A transparent conductive film ITO is deposited on the entire CMOS wafer substrate 1 and the LED blue light-emitting units 3, quantum dot first light-emitting units 4, and quantum dot second light-emitting units 5 to form a common cathode. On the surface of the transparent conductive film ITO in the region between the LED blue light-emitting units 3, quantum dot first light-emitting units 4, and quantum dot second light-emitting units 5, one or more metals selected from Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited to form one or more metal layers to form interconnect electrodes.

[0055] Specifically, a quantum dot hybrid integrated multicolor display includes a CMOS wafer substrate 1, with an anode via 2 formed inside the CMOS wafer substrate 1. The anode via 2 penetrates and connects to the surface of the CMOS wafer substrate, providing a driving current signal to the light-emitting units through the anode via 2. LED blue light-emitting units 3, quantum dot first light-emitting units 4, and quantum dot second light-emitting units 5 are respectively disposed on the surface of the parallel anode via 2. The quantum dot first light-emitting unit 4 can be configured to emit green light and the quantum dot second light-emitting unit 5 to emit red light, or vice versa, to achieve a full-color display effect. Similarly, only the quantum dot first light-emitting unit 4 and the LED blue light-emitting unit 3 can be used to form a two-color light-emitting unit, or only the quantum dot second light-emitting unit 5 and the LED blue light-emitting unit 3 can be used to form a two-color light-emitting unit.

[0056] The manufacturing method of this quantum dot hybrid integrated multicolor display includes: providing a CMOS wafer substrate 1, wherein an anode via 2 is formed inside the CMOS wafer substrate 1, the anode via 2 penetrating and connecting to the surface of the CMOS wafer substrate, and a driving current signal can be provided to the light-emitting unit through the anode via 2; typically, the anode via 2 is a tungsten via; and providing a blue LED epitaxial wafer, the substrate material of which is a common epitaxial growth material including silicon, sapphire, gallium nitride, silicon carbide, etc. The specific manufacturing steps are as follows:

[0057] S1, deposit Ti / Pt / Au metal layers on the surface of the CMOS wafer substrate 1 with tungsten holes, with the thickness of each metal layer being 20nm / 50nm / 1000nm respectively, forming metal bonds on the CMOS wafer substrate 1; deposit ITO / Cr / Al / Pt / Au metal layers on the surface of the blue LED epitaxial wafer, with the thickness of each metal layer being 50nm / 20nm / 200nm / 50nm / 1000nm respectively, forming metal bonds on the blue LED epitaxial wafer; bond the CMOS wafer substrate 1 and the blue LED epitaxial wafer together, then remove the LED epitaxial wafer substrate, and perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer with blue light-emitting units 3;

[0058] The Ti / Pt / Au (20nm / 50nm / 1000nm) metal on the surface of the CMOS wafer substrate is etched using IBE (Ion Beam Etch) technology, leaving only the metal at the locations of LED blue light-emitting unit 3, quantum dot first light-emitting unit 4, and quantum dot second light-emitting unit 5. The size of the light-emitting unit is 0.1-10µm, and the spacing between the light-emitting units is 0.01-10µm.

[0059] A 500 nm thick SiO2 layer was deposited on the sidewall of the blue light-emitting unit 3 using ALD (atomic layer deposition) or PECVD (plasma-enhanced chemical vapor deposition), and then the first passivation layer 9 was formed by photolithography and dry etching processes.

[0060] S2, ITO is deposited using a sputtering process. An ITO layer is formed on top of the metal at the location of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 through photolithography and etching processes. To further improve the brightness of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5, a metal with a thickness of 50-1000nm and high reflectivity, such as Ag or Al, can be deposited before depositing the ITO layer.

[0061] S3, PEDOT:PSS is deposited on the surface of the ITO layer by solution spin coating or vacuum evaporation process to form a hole injection layer with a thickness of 30nm; here PEDOT:PSS refers to a polymer composed of two substances, PEDOT and PSS; PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer), and PSS is polystyrene sulfonate.

[0062] S4. TFB (1,2,4,5-tetra(trifluoromethyl)benzene) is deposited on the hole injection layer using a solution method or vacuum evaporation process to form a hole transport layer with a thickness of 30 nm.

[0063] S5, DICTRz:CdSe / CdS (the emission wavelength of red quantum dots is 620-640nm) is deposited at the position of the first quantum dot emitting unit 4 or the position of the second quantum dot emitting unit 5 on the hole transport layer using a solution vacuum evaporation process to form a quantum dot emitting layer with a thickness of 40nm; wherein, DICTRz is 12-(4,6-diphenyl-1,3,5-triazin-2-yl)-11-phenylindolo[2,3-a]carbazole (12-(4,6-diphenyl-1,3,5-triazin-2-yl)-11-phenylindolo[2,3-a]carbazole; CdSe is cadmium selenide, and CdS is cadmium sulfide.

[0064] S6. CdSe / CdS or InP quantum dots (the emission wavelength of green quantum dots is 530-550nm) are deposited at the position of the second quantum dot emitting unit 5 or the position of the first quantum dot emitting unit 4 on the hole transport layer using a solution vacuum evaporation process to form a quantum dot emitting layer with a thickness of 40nm; wherein: CdSe is cadmium selenide, CdS is cadmium sulfide, and InP is indium phosphide.

[0065] S7, ZnO is deposited on the light-emitting layer using a solution method or vacuum evaporation process to form an electron transport layer with a thickness of 30nm;

[0066] In step S8, photolithography and organic solvent chemical etching are used to remove the material deposited in the subsequent process of step S2 on the surface of the LED blue light-emitting unit. Simultaneously, the deposited material between the LED blue light-emitting unit 3, the first quantum dot light-emitting unit 4, and the second quantum dot light-emitting unit 5 can also be removed, thus forming the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5. Specifically, photolithography and organic solvent chemical etching are used to remove the material deposited in steps S2-S7 on the surface of the LED blue light-emitting unit. Simultaneously, the material deposited in steps S2-S7 between the LED blue light-emitting unit 3, the first quantum dot light-emitting unit 4, and the second quantum dot light-emitting unit 5 can also be removed.

[0067] S9 uses a sputer process to deposit a 20-1000nm thick transparent conductive film ITO to cover the surfaces of the blue light-emitting unit 3, the first quantum dot light-emitting unit 4, and the second quantum dot light-emitting unit 5 to form a common cathode;

[0068] S10 can also further deposit one or more metals such as Mg, Ag, Au, Al, Cu, Cr, Ti, etc. on the ITO surface in the region between the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 to form one or more metal layers as interconnecting electrodes, so as to enhance the conductivity of the common cathode ITO, without affecting the light output of each light-emitting unit.

[0069] S11, the filling layer 6 formed by OC adhesive is applied to the wafer surface by spin coating or dispensing process, and then the cover glass 7 is used to seal and protect the entire device.

[0070] Example 2

[0071] On a CMOS wafer substrate 1, an LED blue light-emitting unit 3 is disposed on the surface of an anode via 2. A passivation layer is deposited on the sidewall of the LED blue light-emitting unit 3 using PECVD (Plasma Enhanced Chemical Vapor Deposition) or ALD (Atomic Layer Deposition). A quantum dot first light-emitting unit 4 and a quantum dot second light-emitting unit 5 are disposed on the upper part of the LED blue light-emitting unit 3, with a spacing between them. The spacing between the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 is 0.01-0.3 μm, the size of the LED blue light-emitting unit 3 is 0.1-30 μm, and the size of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 is 0.1-20 μm.

[0072] One or more of the following metals are deposited on the upper surface of the LED blue light-emitting unit 3: ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni, to form a transparent cathode layer of the LED blue light-emitting unit 3. One or more of the following metals are deposited on the cathode layer surface: DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni, as a reflective layer 11. The length of the reflective layer 11 is less than the length of the LED blue light-emitting unit 3. The first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are located on the upper surface of the reflective layer 11. The anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are electrically connected to the anode vias 2 on the CMOS wafer substrate 1, respectively.

[0073] One or more of the following metals, ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni, are deposited on the outer surface of the LED blue light-emitting unit to form the LED blue light-emitting unit cathode 10. Reflective lenses 8 are respectively arranged on the left and right sides of the LED blue light-emitting unit 3. A transparent conductive film ITO is deposited on the entire CMOS wafer substrate 1, the quantum dot first light-emitting unit 4, the quantum dot second light-emitting unit 5, and the LED blue light-emitting unit cathode 10 as a common cathode. One or more metals, Mg, Ag, Au, Al, Cu, Cr, and Ti, are deposited on the transparent conductive film ITO between the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 to form one or more metal layers to form interconnect electrodes.

[0074] Specifically, a quantum dot hybrid integrated multicolor display includes a CMOS wafer substrate 1. An anode via 2 is formed inside the CMOS wafer substrate 1, penetrating and connecting to the surface of the CMOS wafer substrate. A driving current signal can be provided to the light-emitting unit through the anode via 2. An LED blue light-emitting unit 3 is disposed on the surface of the anode via 2, and a passivation layer is deposited on the sidewall of the LED blue light-emitting unit 3 using PECVD or ALD. A first quantum dot light-emitting unit 4 and a second quantum dot light-emitting unit 5 are disposed above the LED blue light-emitting unit 3. The LED blue light-emitting unit 3, the first quantum dot light-emitting unit 4, and the second quantum dot light-emitting unit 5 are individually controlled through the parallel anode vias 2 to form an AM quantum dot hybrid integrated multicolor display. Alternatively, only the first quantum dot light-emitting unit 4 or the second quantum dot light-emitting unit 5 can be disposed on the surface of the LED blue light-emitting unit 3 to form a dual-color AM quantum dot hybrid integrated display. The first quantum dot light-emitting unit 4 can be set to emit green light, and the second quantum dot light-emitting unit 5 can emit red light; or the first quantum dot light-emitting unit 4 can be set to emit red light, and the second quantum dot light-emitting unit 5 can emit green light, to achieve a full-color display effect. Similarly, it is also possible to set only the quantum dot first light-emitting unit 4 and the LED blue light-emitting unit 3 to form a two-color light-emitting unit, or to set only the quantum dot second light-emitting unit 5 and the LED blue light-emitting unit 3 to form a two-color light-emitting unit.

[0075] exist Figure 4In the process, the blue light-emitting unit 3 is bonded to the anode via 2 of the CMOS wafer substrate by a metal bonding process. The bonding metal includes one or more metals such as Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni to form one or more metal anodes of the blue LED unit. One or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the upper surface of the blue LED light-emitting unit 3 by a sputer as a transparent cathode layer of the blue LED light-emitting unit 3. One or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the surface of the cathode layer as a reflective layer 11. The length of the reflective layer 11 is shorter than the length of the blue LED light-emitting unit 3.

[0076] Reflective lenses 8 are respectively arranged on the left and right sides of the LED blue light-emitting unit 3. When the light emitted by the LED blue light-emitting unit is reflected between the anode of the LED blue light-emitting unit and the reflective layer 11 until it is transmitted to the surface of the reflective lens 8, the reflective lens 8 can direct the incident light parallel to the upper surface. The quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are located on the upper surface of the reflective layer 11. If the reflective layer 11 is a conductive metal, the insulating medium between the reflective layer 11 and the quantum dot light-emitting unit can be an organic polymer or SiN, SiO, etc. (Appendix) Figure 3 In the direction of BB', such as Figure 4 As shown, one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the outer surface of the LED blue light unit to form the LED blue light-emitting unit cathode 10.

[0077] Appendix Figure 3 In the AA' direction, such as Figure 5As shown, the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are located on the upper surface of the reflective layer 11. The anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are electrically connected to the anode via 2 of the driving substrate. The area occupied by the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 can be set according to requirements; for example, the area of ​​the green light-emitting unit occupies 1 / 3 of the area of ​​the reflective layer 11, and the area of ​​the red light-emitting unit occupies 2 / 3 of the area of ​​the reflective layer 11. Then, a 20-1000nm thick layer of ITO is deposited on the entire CMOS wafer substrate 1 and the first quantum dot light-emitting unit 4, the second quantum dot light-emitting unit 5, and the LED blue light-emitting unit cathode 10 as a common cathode, connecting the LED blue light-emitting unit cathode, the first quantum dot light-emitting unit 4, the second quantum dot light-emitting unit 5 to the cathode ring of the driving substrate. Alternatively, one or more metals such as Mg, Ag, Au, Al, Cu, Cr, and Ti can be deposited on the ITO surface between the light-emitting units to form one or more metal layers as interconnecting electrodes, thereby enhancing the conductivity of the common cathode ITO without affecting the light output of each light-emitting unit. A filling layer 6 formed by OC adhesive is then applied to the wafer surface using spin coating or dispensing processes, and finally, a cover glass 7 is used to seal and protect the entire device.

[0078] The quantum dot first light-emitting unit 4 includes, from bottom to top, a first light-emitting unit anode 401, a first light-emitting unit hole injection layer 402, a first light-emitting unit hole transport layer 403, a quantum dot first light-emitting layer 404, a first light-emitting unit electron transport layer 405, and a first light-emitting unit cathode layer 406; the quantum dot second light-emitting unit 5 includes, from bottom to top, a second light-emitting unit anode 501, a second light-emitting unit hole injection layer 502, a second light-emitting unit hole transport layer 503, a quantum dot second light-emitting layer 504, a second light-emitting unit electron transport layer 505, and a second light-emitting unit cathode layer 506; wherein the light-emitting unit hole injection layer and hole transport layer may or may not be separated.

[0079] The manufacturing method of this quantum dot hybrid integrated multicolor display includes: providing a CMOS wafer substrate 1, wherein an anode via 2 is formed inside the CMOS wafer substrate 1, the anode via 2 penetrating and connecting to the surface of the CMOS wafer substrate, and a driving current signal can be provided to the light-emitting unit through the anode via 2; the anode via 2 is electrically connected to the driving circuit in the CMOS wafer substrate 1 through a tungsten via; and providing a blue LED epitaxial wafer, wherein the substrate material is a common epitaxial growth material, including silicon, sapphire, gallium nitride, silicon carbide, etc. The specific manufacturing steps are as follows:

[0080] S1, deposit Ti / Pt / Au metal layers on the surface of the CMOS wafer substrate 1 with tungsten holes, with thicknesses of 20nm / 50nm / 1000nm for each metal layer, forming metal bonds on the CMOS wafer substrate 1; deposit ITO / Cr / Al / Pt / Au metal layers on the surface of the blue LED epitaxial wafer, with thicknesses of 50nm / 20nm / 200nm / 50nm / 1000nm for each metal layer, forming metal bonds on the blue LED epitaxial wafer; bond the CMOS wafer substrate 1 and the blue LED epitaxial wafer together, then remove the LED epitaxial wafer substrate, and perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer with blue light-emitting units 3;

[0081] The Ti / Pt / Au (20nm / 50nm / 1000nm) metal on the surface of the CMOS wafer is etched using the IBE process, leaving only the metal located in the blue LED light-emitting unit 3, where the size of the light-emitting unit is 0.1-30um and the spacing between the light-emitting units is 0.01-5um;

[0082] A 500 nm thick SiO2 layer is deposited on the sidewall of the blue light-emitting unit 3 by ALD (atomic layer deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition), and then the first passivation layer is formed by photolithography and dry etching processes.

[0083] S2, one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the upper surface of the LED blue light-emitting unit 3 by sputtering to form a transparent cathode layer of the LED blue light-emitting unit 3 with a thickness of 50-1000 nm.

[0084] S3, deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni as a reflective layer 11 on the surface of the transparent cathode layer. After photolithography and etching, the length of the reflective layer 11 is about 0.5-30 μm shorter than the length of the LED blue light unit 3, so as to minimize the loss of the light-emitting layer area while depositing the LED blue light-emitting unit cathode 10.

[0085] S4, Reflective lenses 8 are respectively set on the left and right sides of the LED blue light-emitting unit 3. The reflective lenses 8 can be formed by etching Si with oxynitride and then depositing reflective metal on the surface. The fabrication of reflective lenses 8 is existing technology and will not be described in detail.

[0086] S5. When the light emitted by the LED blue light-emitting unit is reflected between the anode of the LED blue light-emitting unit and the reflective layer 11 until it is transmitted to the surface of the reflective lens 8, the reflective lens 8 can shoot the incident light out of the upper surface in parallel.

[0087] S6. 50-100nm SiO2 was fabricated on the surface of the mirror layer 11 using PECVD (Plasma Enhanced Chemical Vapor Deposition), photolithography, and etching processes.

[0088] S7. Appendix Figure 3 In the BB' direction, one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the upper surface of the outer cathode layer of the LED blue light unit through processes such as photolithography, deposition, and etching to form the LED blue light-emitting unit cathode 10.

[0089] S8. Appendix Figure 3 In the AA' direction, one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni, each 0.5-2 μm in diameter, are deposited on the SiO2 surface using processes such as photolithography, deposition, and etching to fabricate the anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5. The anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are connected to the tungsten holes on both sides of the LED blue light-emitting unit 3. The area occupied by the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 can be set according to requirements; for example, the area of ​​the green light-emitting unit occupies 1 / 3 of the area of ​​the reflective layer 11, and the area of ​​the red light-emitting unit occupies 2 / 3 of the area of ​​the reflective layer 11. Furthermore, the anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are disconnected.

[0090] S9, a 500nm thick SiO2 layer is deposited by ALD or PECVD, and then the SiO2 layer at the anode position of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 is etched away by photolithography and dry etching processes, and only the positions other than the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are covered.

[0091] S10, PEDOT:PSS is deposited on the anode surface of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 using a solution spin coating or vacuum evaporation process to form a hole injection layer with a thickness of 30 nm. PEDOT:PSS refers to a polymer composed of two substances, PEDOT and PSS. PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer), and PSS is polystyrene sulfonate. The hole injection layer 402 of the first light-emitting unit and the hole injection layer 502 of the second light-emitting unit are fabricated; the hole injection layer 402 of the first light-emitting unit and the hole injection layer 502 of the second light-emitting unit can be connected or disconnected.

[0092] S11, TFB (1,2,4,5-tetrafluoromethyl)benzene is deposited on the hole injection layer using a solution method or vacuum evaporation process to form a hole transport layer with a thickness of 30 nm, thus fabricating a first light-emitting unit hole transport layer 403 and a second light-emitting unit hole transport layer 503; wherein the first light-emitting unit hole transport layer 403 and the second light-emitting unit hole transport layer 503 can be connected or disconnected.

[0093] S12, DICTRz:CdSe / CdS (the emission wavelength of red quantum dots is 630nm) is deposited at the position of the first quantum dot emitting unit 4 or the position of the second quantum dot emitting unit 5 on the hole transport layer using a solution vacuum evaporation process to form a quantum dot emitting layer with a thickness of 40nm; DICTRz refers to DICTRz(12-(4,6-diphenyl-1,3,5-triazin-2-yl)-11-phenylindolo[2,3-a]carbazole; CdSe is cadmium selenide, and CdS is cadmium sulfide.

[0094] S13, CdSe / CdS or InP quantum dots (the emission wavelength of green light quantum dots is 540nm) are deposited at the position of the second quantum dot emitting unit 5 or the position of the first quantum dot emitting unit 4 on the hole transport layer using a solution vacuum evaporation process to form a quantum dot emitting layer with a thickness of 40nm; wherein: CdSe is cadmium selenide, CdS is cadmium sulfide, and InP is indium phosphide.

[0095] S14, ZnO is deposited on the light-emitting layer using a solution method or vacuum evaporation process to form an electron transport layer with a thickness of 30nm, and the quantum dot first light-emitting unit 4 and quantum dot second light-emitting unit 5 are disconnected;

[0096] S15, using the sputer process, a 20-1000nm thick transparent conductive film ITO (not shown in the figure) is deposited on the entire CMOS wafer substrate 1, the first quantum dot light-emitting unit 4, the second quantum dot light-emitting unit 5, the LED blue light-emitting unit cathode 10, and the cathode ring, so that the cathode ring can simultaneously supply power to the LED blue light-emitting unit 3, the first quantum dot light-emitting unit 4, and the second quantum dot light-emitting unit 5, forming a common cathode;

[0097] S16, or further, one or more metals such as Mg, Ag, Au, Al, Cu, Cr, Ti, etc. can be deposited on the ITO surface between the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 to form one or more metal layers as interconnecting electrodes, so as to enhance the conductivity of the common cathode ITO, without affecting the light output of each light-emitting unit.

[0098] S17, the filling layer 6 formed by OC adhesive is applied to the surface of the wafer by spin coating or dispensing process on the cathode layer, and then the cover glass 7 is used to seal and protect the entire device.

[0099] This invention proposes a vertical quantum dot hybrid integrated multicolor display structure, which can further improve the display's PPI (pixel density).

[0100] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the technical solution of the present invention, or the direct application of the concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A quantum dot hybrid integrated multicolor display, characterized in that: The system includes a CMOS wafer substrate (1), an anode via (2), and a light-emitting unit. The CMOS wafer substrate (1) contains tungsten vias, and the anode via (2) is located inside the CMOS wafer substrate (1). The anode via (2) is electrically connected to the driving circuit inside the CMOS wafer substrate (1) through the tungsten via. The anode via (2) extends through to the surface of the CMOS wafer substrate. A light-emitting unit is located on the surface of the anode via (2) on the CMOS wafer substrate (1), and a driving current signal is provided to the light-emitting unit through the anode via (2). The light-emitting unit includes a blue LED light-emitting unit (3) and a light-emitting unit with a large current. The first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) are provided. A transparent cathode layer of the LED blue light-emitting unit (3) is deposited on the upper surface of the LED blue light-emitting unit (3). A reflective layer (11) is deposited on the surface of the cathode layer. The length of the reflective layer (11) is less than the length of the LED blue light-emitting unit (3). The first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) are located on the upper surface of the reflective layer (11). The anodes of the first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) are electrically connected to the anode vias (2) on the CMOS wafer substrate (1).

2. The quantum dot hybrid integrated multicolor display as described in claim 1, characterized in that: The quantum dot first light-emitting unit (4) is set to emit green light and the quantum dot second light-emitting unit (5) emits red light, or the quantum dot first light-emitting unit (4) emits red light and the quantum dot second light-emitting unit (5) emits green light; or only the quantum dot first light-emitting unit (4) and the LED blue light-emitting unit (3) are set to form a two-color light-emitting unit, and the quantum dot first light-emitting unit (4) emits green light or red light; or only the quantum dot second light-emitting unit (5) and the LED blue light-emitting unit (3) are set to form a two-color light-emitting unit, and the quantum dot second light-emitting unit (5) emits green light or red light.

3. The quantum dot hybrid integrated multicolor display as described in claim 2, characterized in that: The first quantum dot light-emitting unit (4) includes, from bottom to top, a first light-emitting unit anode (401), a first light-emitting unit hole injection layer (402), a first light-emitting unit hole transport layer (403), a quantum dot first light-emitting layer (404), a first light-emitting unit electron transport layer (405), and a first light-emitting unit cathode layer (406); the second quantum dot light-emitting unit (5) includes, from bottom to top, a second light-emitting unit anode (501), a second light-emitting unit hole injection layer (502), a second light-emitting unit hole transport layer (503), a quantum dot second light-emitting layer (504), a second light-emitting unit electron transport layer (505), and a second light-emitting unit cathode layer (506).

4. A quantum dot hybrid integrated multicolor display as described in claim 3, characterized in that: On the CMOS wafer substrate (1), an LED blue light-emitting unit (3) is disposed on the surface of the anode via (2). A passivation layer is deposited on the sidewall of the LED blue light-emitting unit (3) by PECVD or ALD. A quantum dot first light-emitting unit (4) and a quantum dot second light-emitting unit (5) are disposed on the upper part of the LED blue light-emitting unit (3), and a gap is provided between the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5).

5. A quantum dot hybrid integrated multicolor display as described in claim 4, characterized in that: An LED blue light-emitting unit cathode (10) is deposited on the outer surface of the LED blue light-emitting unit (3), and reflective lenses (8) are respectively set on the left and right sides of the LED blue light-emitting unit (3). A transparent conductive film ITO is deposited on the entire CMOS wafer substrate (1) and the quantum dot first light-emitting unit (4), the quantum dot second light-emitting unit (5), and the LED blue light-emitting unit cathode (10) as a common cathode. One or more metals of Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited on the transparent conductive film ITO between the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) to form one or more metal layers to form interconnect electrodes.

6. A method for manufacturing a quantum dot hybrid integrated multicolor display, characterized in that: Based on the quantum dot hybrid integrated multicolor display as described in claim 4 or 5, the manufacturing method comprises the following steps: S1, a CMOS wafer substrate (1) and a blue LED epitaxial wafer are provided. The CMOS wafer and the blue LED epitaxial wafer are metal bonded together. The LED epitaxial wafer substrate is then removed. The pixel pattern is formed by photolithography and etching processes to form a silicon-based CMOS wafer with blue light-emitting units (3). The metal on the surface of the CMOS wafer is etched by IBE process, leaving only the metal located in the blue light-emitting unit (3) of the LED. A 500nm thick SiO2 is deposited on the sidewall of the blue light-emitting unit (3) by ALD or PECVD. The first passivation layer is then formed by photolithography and dry etching processes. S2, deposit one or more metals of Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a wavelength of 50-1000 nm on the upper surface of the LED blue light-emitting unit (3) as a transparent cathode layer of the LED blue light-emitting unit (3); S3, deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni as a reflective layer (11) on the surface of the transparent cathode layer. After yellow light and etching, the length of the reflective layer (11) is 0.5-30um shorter than the length of the LED blue light-emitting unit (3). S4, reflective lenses (8) are respectively set on the left and right sides of the LED blue light-emitting unit (3). S5. When the light emitted by the LED blue light-emitting unit is reflected between the anode of the LED blue light-emitting unit and the reflective layer (11) until it is transmitted to the surface of the reflective lens (8), the reflective lens (8) can shoot the incident light out of the upper surface in parallel. S6. 50-100nm SiO2 was fabricated on the surface of the reflective layer (11) using PECVD, photolithography and etching processes; S7. One or more metals selected from Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni are deposited on the upper surface of the outer cathode layer of the LED blue light unit through processes such as photolithography, deposition, and etching to form the LED blue light-emitting unit cathode (10). S8. Anodes of the first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) are respectively fabricated by depositing one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni on the SiO2 surface using processes such as photolithography, deposition, and etching. The anodes of the first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) are respectively connected to the tungsten holes on both sides of the LED blue light-emitting unit (3). S9, deposit a 500nm thick SiO2 by ALD or PECVD, and then form a SiO2 layer at the anode position of the first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) by photolithography and dry etching processes. Only the positions other than the first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) are covered. S10, PEDOT:PSS is deposited on the anode surface of the first quantum dot light-emitting unit (4) and the second quantum dot light-emitting unit (5) by solution spin coating or vacuum evaporation process to form a hole injection layer with a thickness of 30nm, and the hole injection layer (402) of the first light-emitting unit and the hole injection layer (502) of the second light-emitting unit are fabricated. S11, deposit TFB on the hole injection layer using solution method or vacuum evaporation process to form a hole transport layer with a thickness of 30nm, and fabricate the first light-emitting unit hole transport layer (403) and the second light-emitting unit hole transport layer (503). S12, DICTRz:CdSe / CdS is deposited at the position of the first quantum dot emitting unit (4) or the position of the second quantum dot emitting unit (5) on the hole transport layer using a solution vacuum evaporation process. The red quantum dot emission wavelength is 630nm, forming a quantum dot emitting layer with a thickness of 40nm. S13, CdSe / CdS or InP quantum dots are deposited at the position of the second quantum dot emitting unit (5) or the position of the first quantum dot emitting unit (4) on the hole transport layer using a solution vacuum evaporation process. The green light quantum dot emission wavelength is 540nm, forming a quantum dot emitting layer with a thickness of 40nm. S14, ZnO is deposited on the light-emitting layer using a solution method or vacuum evaporation process to form an electron transport layer with a thickness of 30nm; S15, using the sputer process, a 20-1000nm thick transparent conductive film ITO is deposited on the entire CMOS wafer substrate (1), the first quantum dot light-emitting unit (4), the second quantum dot light-emitting unit (5), the LED blue light-emitting unit cathode (10), and the cathode ring, so that the cathode ring can simultaneously supply power to the LED blue light-emitting unit (3), the first quantum dot light-emitting unit (4), and the second quantum dot light-emitting unit (5), forming a common cathode.

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