Fault detection systems, methods, apparatuses, devices, and storage media

Abstract

The application discloses a fault detection system, method, device, equipment and storage medium. The fault detection system comprises a first switch circuit, a first end of the first switch circuit being connected with a positive electrode of a power supply, and a second end of the first switch circuit being connected with a first node; a second switch circuit, a first end of the second switch circuit being connected with a negative electrode of the power supply, and a second end of the second switch circuit being connected with a second node; a transistor module, a first end of the transistor module being connected with the first node, and a second end of the transistor module being connected with the second node; and a controller, the controller being configured to collect a voltage of the first node and a voltage of the second node under the condition that the first switch circuit is turned on and the second switch circuit is turned off. The application is helpful to improve the reliability of fault detection and the service life of the first switch circuit.

Description

Technical Field

[0001] This application belongs to the field of fault detection technology, and in particular relates to a fault detection system, method, apparatus, equipment and storage medium. Background Technology

[0002] Currently, transistor modules, such as insulated gate bipolar transistor (IGBT) modules and silicon carbide transistor modules, are widely used in electric vehicles, rail transportation and other fields as core devices for energy conversion and transmission.

[0003] In related technologies, transistor modules are typically tested after powering on the transistor module and the electrical equipment controlled by the transistor module. However, these technologies often have the drawback of making it difficult to effectively detect transistor module faults. Summary of the Invention

[0004] This application provides a fault detection system, method, apparatus, device, and storage medium to address the problem that related technologies struggle to effectively detect transistor module faults.

[0005] In a first aspect, embodiments of this application provide a fault detection system, including:

[0006] The first switching circuit has its first terminal connected to the positive terminal of the power supply and its second terminal connected to the first node.

[0007] The second switching circuit has its first terminal connected to the negative terminal of the power supply and its second terminal connected to the second node.

[0008] A transistor module, with its first end connected to the first node and its second end connected to the second node;

[0009] The controller is configured to acquire the voltage of the first node and the voltage of the second node when the first switching circuit is turned on and the second switching circuit is turned off.

[0010] The fault detection system provided in this embodiment includes a first switching circuit, a second switching circuit, a transistor module, and a controller. The first terminal of the first switching circuit is connected to the positive terminal of the power supply, and the second terminal is connected to a first node. The first terminal of the second switching circuit is connected to the negative terminal of the power supply, and the second terminal is connected to a second node. The first terminal of the transistor module is connected to the first node, and the second terminal is connected to the second node. The controller is configured to collect the voltages of the first and second nodes when the first switching circuit is on and the second switching circuit is off. This embodiment can detect faults in the transistor module even when the positive and negative terminals of the power supply are not connected, which helps improve the reliability of fault detection. Simultaneously, when a fault exists in the transistor module, the first switching circuit can be disconnected without load, thereby reducing the number of times the first switching circuit is disconnected under load and increasing its service life.

[0011] Optionally, the fault detection system further includes a first capacitor, and the first switching circuit includes a first switch and a first resistor;

[0012] The two ends of the first capacitor are connected to the first node and the second node, respectively;

[0013] The first switch and the first resistor are connected in series between the first node and the positive terminal of the power supply.

[0014] This embodiment can avoid excessive main circuit current at the moment the second switching circuit is turned on.

[0015] Optionally, the fault detection system also includes a second resistor and a third switching circuit, which are connected in series between the first node and the second node.

[0016] In this embodiment, the voltage of the second node is affected by the operating state of the transistor module, which helps to improve the reliability of fault detection of the transistor module.

[0017] Optionally, the first switching circuit further includes a second switch, the two ends of which are respectively connected to the first node and the positive terminal of the power supply.

[0018] This embodiment can avoid additional energy consumption on the first resistor when the main circuit is working stably, effectively saving power consumption.

[0019] Optionally, the transistor module includes N bridge arm sub-circuits, which are connected in parallel between the first node and the second node. Each bridge arm sub-circuit includes a first transistor, a third node, and a second transistor connected in series. N is an integer greater than 1. The third node is used to connect electrical equipment.

[0020] This embodiment can reliably locate faulty transistors, thereby effectively improving the fault detection effect of transistor modules.

[0021] Secondly, embodiments of this application provide a fault detection method, applied to the fault detection system as shown in the first aspect, the method comprising:

[0022] When the first switching circuit is turned on and the second switching circuit is turned off, voltage detection data is acquired. The voltage detection data is obtained by collecting the voltage of the first node and the voltage of the second node.

[0023] Based on voltage detection data, the fault detection results of the transistor module are determined.

[0024] The fault detection method provided in this application is applied to a fault detection system. The method includes acquiring voltage detection data when a first switching circuit is on and a second switching circuit is off, and determining the fault detection result of the transistor module based on the voltage detection data. The voltage detection data is obtained by collecting the voltages of the first node and the second node. This application embodiment can detect faults in the transistor module even when the positive and negative terminals of the power supply are not connected, which helps improve the reliability of fault detection. Simultaneously, when a fault exists in the transistor module, the first switching circuit can be disconnected without load, thereby helping to reduce the number of times the first switching circuit is disconnected under load and improving its service life.

[0025] Optionally, voltage detection data is acquired, including:

[0026] Obtain the first voltage of the second node when the transistor module is in the off state;

[0027] When the first voltage is 0, the second voltage of the first node and the third voltage of the second node are obtained when the transistor module is in the on state.

[0028] This embodiment improves the rationality of the fault detection process.

[0029] Optionally, when the transistor module includes N bridge arm sub-circuits, the conduction state includes at least one of the following:

[0030] Any one of the first transistors is turned on;

[0031] Any one of the second transistors is turned on;

[0032] The first transistor in any bridge arm sub-circuit is turned on, and the second transistor in any bridge arm sub-circuit is turned on.

[0033] In this embodiment, by reasonably setting the conduction state of the transistor module, the fault type and location of the transistor can be effectively determined based on the corresponding voltage detection data, thereby improving the fault detection effect.

[0034] Optionally, before acquiring the voltage detection data, the method further includes:

[0035] Upon receiving a power-on command for the target, the first switching circuit is turned on.

[0036] After determining the fault detection result of the transistor module based on the voltage detection data, the method further includes:

[0037] If the fault detection result indicates that there is no preset fault, control the second switch circuit to be turned on;

[0038] If the fault detection result indicates a preset fault, the first switch circuit is disconnected.

[0039] In this embodiment, controlling the on / off state and the conduction sequence of the first and second switching circuits helps to improve the service life of the first switching circuit.

[0040] Optionally, if the fault detection system includes a third switching circuit, the method further includes:

[0041] Upon receiving a power-on command from the target, the third switch circuit is disconnected.

[0042] This embodiment can control the third switch circuit to disconnect, ensuring that the obstacle detection of the transistor module can proceed normally.

[0043] Thirdly, embodiments of this application provide a fault detection device, the device comprising:

[0044] The acquisition module is used to acquire voltage detection data when the first switching circuit is turned on and the second switching circuit is turned off. The voltage detection data is obtained by collecting the voltage of the first node and the voltage of the second node.

[0045] The first control module is used to determine the fault detection result of the transistor module based on the voltage detection data.

[0046] This fault detection device is a device corresponding to the above-mentioned fault detection method, and this device can achieve the same technical effect as the method.

[0047] Fourthly, embodiments of this application provide an electronic device, the device including: a processor and a memory storing computer program instructions;

[0048] The processor implements the fault detection method as shown in the second aspect when executing computer program instructions.

[0049] Fifthly, embodiments of this application provide a computer storage medium storing computer program instructions, which, when executed by a processor, implement the fault detection method as described in the second aspect. Attached Figure Description

[0050] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0051] Figure 1 This is a schematic diagram of a fault detection system provided in an embodiment of this application;

[0052] Figure 2 This is another structural schematic diagram of the fault detection system provided in the embodiments of this application;

[0053] Figure 3 This is a flowchart illustrating the fault detection method provided in an embodiment of this application;

[0054] Figure 4 This is a flowchart illustrating an application example of a fault detection method;

[0055] Figure 5 This is a schematic diagram of the structure of the fault detection device provided in the embodiments of this application;

[0056] Figure 6 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0057] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0058] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0059] Generally speaking, a transistor module can include one or more transistors. By controlling the switching on and off of the transistors, the transistor module can acquire corresponding functions.

[0060] For example, transistor modules can control the power supply to electrical equipment; or, they can invert DC power to obtain two-phase or three-phase AC power; or they can form an H-bridge circuit with a motor to switch between forward and reverse rotation, etc., which will not be listed here.

[0061] Considering the application scenarios of electric vehicles, electric vehicles typically consist of a power battery and a motor. The power battery can output high-voltage direct current, while the motor may require three-phase alternating current for driving. Therefore, a transistor module is usually placed between the power battery and the motor.

[0062] Similarly, transistor modules are also used in other applications, such as in rail vehicles, robots, and aerospace equipment.

[0063] To simplify the description, the embodiments of this application will be mainly described below using the application scenario of electric vehicles.

[0064] In related technologies, to ensure the operational safety of the transistor module and the motor, fault detection is performed on the transistor module after the motor is powered on. However, in the powered-on state, the voltage values ​​of each node in the transistor module are affected by many factors, making it difficult to accurately locate the specific faulty transistor and determine the specific fault type.

[0065] Furthermore, in some applications, additional switching structures such as contactors are added between the power battery and the transistor module. When the motor is powered on, the contactor needs to be turned on, but when a fault is detected in the transistor module, the contactor needs to be turned off under load, which affects the service life of the contactor.

[0066] To address the problems of the prior art, embodiments of this application provide a fault detection system, method, apparatus, device, and storage medium. The fault detection system provided in this application embodiment will be described first below.

[0067] Figure 1 A schematic diagram of the structure of a fault detection system provided in one embodiment of this application is shown. Figure 1 As shown, the fault detection system includes:

[0068] The first switching circuit 110 has its first terminal connected to the positive terminal of the power supply 101, and its second terminal connected to the first node P.

[0069] The second switching circuit 120 has its first terminal connected to the negative terminal of the power supply 101 and its second terminal connected to the second node Q.

[0070] Transistor module 130, the first end of transistor module 130 is connected to the first node P, and the second end of transistor module 130 is connected to the second node Q;

[0071] The controller 140 is configured to acquire the voltage of the first node P and the voltage of the second node Q when the first switching circuit 110 is turned on and the second switching circuit 120 is turned off.

[0072] In this embodiment, both the first switching circuit 110 and the second switching circuit 120 may include corresponding switching structures, such as contactors, relays, or switching transistors.

[0073] Each switching circuit can be configured with one or more switching structures as needed. For example, the first switching circuit 110 may include multiple switching structures connected in parallel. The purpose of setting up these multiple switching structures can be for redundancy, providing operational reliability for the first switching circuit 110. Alternatively, a resistor can be connected in series with one of the switching structures, and these switching structures can be turned on sequentially at different operating stages to provide buffering for capacitors and other electronic components that may exist in subsequent circuits, preventing large currents from damaging capacitors and other electronic components.

[0074] Considering the aforementioned application scenarios for electric vehicles, power source 101 can be a power battery. Of course, in other application scenarios, power source 101 can also be other types of structures, such as a storage battery, depending on the actual application scenario.

[0075] To a certain extent, the first node P and the second node Q can be considered as two voltage measurement points in the main circuit. The first node P can be located on the positive bus, and the second node Q can be located on the negative bus. In practical applications, the specific locations of the two nodes can be set as needed.

[0076] Typically, transistor module 130 may include at least one transistor. Under normal circumstances, each transistor can switch between an on state and an off state according to a pulse width modulation (PWM) signal input to the control electrode.

[0077] The transistor module 130 can be an Insulated Gate Bipolar Transistor (IGBT) module or a silicon carbide transistor module, etc., without specific limitations. It is easy to understand that the transistors included in the IGBT module can be IGBT transistors; the transistors included in the silicon carbide transistor module can be silicon carbide transistors, etc.

[0078] The connection method between transistors in transistor module 130 is not specifically limited here. For example, transistor module 130 may include multiple bridge arms for inverting the DC power output from power supply 101 and supplying the resulting AC power to electrical device 102; or, for example, when electrical device 102 is a DC motor, transistor module 130 and DC motor can form an H-bridge circuit to control the DC motor to rotate forward or backward, etc. Examples are not given here.

[0079] The controller 140 can be a central processing unit (CPU), a microcontroller unit (MCU), or other types of processors.

[0080] In light of the above-mentioned application scenarios of electric vehicles, controller 140 can be a domain controller, which can integrate control units such as vehicle control unit (VCU), power distribution unit (PDU), and motor control unit (MCU) in electric vehicles.

[0081] The controller 140 can be electrically connected to the first node P and the second node Q to acquire the voltage of the first node P and the voltage of the second node Q. Of course, in some examples, the controller 140 can also be electrically connected to the first switching circuit 110 and the second switching circuit 120 to control the on / off state of these switching circuits.

[0082] In this embodiment, the controller 140 can be configured to acquire the voltage of the first node P and the voltage of the second node Q when the first switch circuit 110 is turned on and the second switch circuit 120 is turned off.

[0083] It is easy to understand that when the first switch circuit 110 is turned on and the second switch circuit 120 is turned off, the main circuit mentioned above may not be in a state of overall conduction, that is, the electrical equipment 102 mentioned above is not powered on.

[0084] Under normal circumstances, when the switching circuit is on or off, the voltage of the first node P is equal to the voltage of the power supply 101; while the voltage of the second node Q varies between 0 and the voltage of the power supply 101 depending on the operating state of the transistor module 130.

[0085] When the voltage at the first node P is normal and the transistor module 130 is faulty, this can be reflected in an abnormal voltage at the second node Q. For example, if the voltage at the second node Q is 0 when the transistor module 130 is on, it indicates that there is an open circuit in the transistor; conversely, if the voltage at the second node Q is equal to the voltage at the first node P when the transistor module 130 is off, it indicates that there is a short circuit in the transistor.

[0086] As can be seen, in this embodiment, the voltage of the second node Q can be used to determine relatively accurately whether the transistor module 130 has a fault and the specific type of fault.

[0087] When the transistor module 130 malfunctions, the various switching circuits on the main circuit are typically disconnected. In this embodiment, since the main circuit is not conducting, the first switching circuit 110 is not disconnected under load, which also helps to improve its service life.

[0088] The fault detection system provided in this embodiment includes a first switching circuit 110, a second switching circuit 120, a transistor module 130, and a controller 140. The first terminal of the first switching circuit 110 is connected to the positive terminal of the power supply 101, and the second terminal of the first switching circuit 110 is connected to a first node P. The first terminal of the second switching circuit 120 is connected to the negative terminal of the power supply 101, and the second terminal of the second switching circuit 120 is connected to a second node Q. The first terminal of the transistor module 130 is connected to the first node P, and the second terminal of the transistor module 130 is connected to the second node Q. The controller 140 is configured to collect the voltage of the first node P and the voltage of the second node Q when the first switching circuit 110 is on and the second switching circuit 120 is off. This embodiment can detect faults in the transistor module 130 when the positive and negative terminals of the power supply 101 are not connected, which helps improve the reliability of fault detection. Simultaneously, when a fault exists in the transistor module 130, the first switching circuit 110 can be switched off without load, thereby helping to reduce the number of times the first switching circuit 110 is switched off under load and improving its service life.

[0089] Optionally, such as Figure 2As shown, the fault detection system also includes a first capacitor C1, and the first switching circuit 110 includes a first switch K1 and a first resistor R1.

[0090] The two ends of the first capacitor C1 are connected to the first node P and the second node Q, respectively;

[0091] The first switch K1 and the first resistor R1 are connected in series between the first node P and the positive terminal of the power supply 101.

[0092] In this embodiment, the first capacitor C1 can be a bus capacitor, and its two ends can be connected to the positive bus and the negative bus respectively. The first resistor R1 can be a pre-charge resistor. The first switch K1 can be a relay or a contactor, etc. In general, the first switch K1 can also be called a pre-charge relay.

[0093] In some application scenarios, when the detection result of the transistor module 130 indicates that there is no fault, the second switch circuit 120 can be further controlled to turn on. At this time, the positive terminal of the power supply 101, the first switch K1, the first resistor R1, the first capacitor C1, the second switch circuit 120 and the negative terminal of the power supply 101 are connected in series. The first resistor R1 and the first capacitor C1 form an RC pre-charge circuit to avoid the main circuit current being too large at the moment the second switch circuit 120 is turned on.

[0094] As for the resistance value of the first resistor R1 and the capacitance value of the first capacitor C1, they can be selected according to actual needs, and no specific limitation is made here.

[0095] Optionally, the fault detection system also includes a second resistor R2 and a third switching circuit 150, which are connected in series between the first node P and the second node Q.

[0096] The second resistor R2 can be a passive discharge resistor, and it can be connected in parallel with the first capacitor C1. Under normal use, when the electrical device 102 is powered off, the first switch circuit 110 and the second switch circuit 120 are disconnected, and the first capacitor C1 and the second resistor R2 form a discharge circuit to discharge the charge stored in the first capacitor C1.

[0097] In this embodiment, a third switching circuit 150 is connected in series in the branch containing the second resistor R2. Similar to the first switching circuit 110 described above, the third switching circuit 150 may include one or more switching structures. For simplicity, the following description primarily uses the example of the third switching circuit 150 including a third switch K3. Figure 2 As shown, the third switch K3 is connected in series with the second resistor R2.

[0098] It is easy to understand that when the first switching circuit 110 is on and the second switching circuit 120 is off, if the aforementioned third switch K3 is not provided, the second node Q is connected to the positive terminal of the power supply 101 through the second resistor R2, and the voltage of the second node Q is always equal to the voltage of the first node P. In this situation, it will be difficult to detect faults in the transistor module 130.

[0099] In this embodiment, by providing a third switching circuit 150, the third switching circuit 150 can be disconnected during the fault detection phase of the transistor module 130, thereby disconnecting the path between the second node Q, the second resistor R2, and the positive terminal of the power supply 101. Thus, the voltage of the second node Q is affected by the operating state of the transistor module 130, which helps to improve the reliability of fault detection of the transistor module 130.

[0100] In one example, when the detection result of transistor module 130 indicates that there is no fault, the third switch circuit 150 and the second switch circuit 120 can be controlled to be turned on simultaneously or sequentially, so that in the subsequent operation, the second resistor R2 can discharge the first capacitor C1.

[0101] In addition, the third switching circuit 150 can also be electrically connected to the controller 140, and the controller 140 controls the on / off state of the third switching circuit 150.

[0102] Optionally, such as Figure 2 As shown, the first switching circuit 110 also includes a second switch K2, the two ends of which are connected to the first node P and the positive terminal of the power supply 101, respectively.

[0103] In this embodiment, the second switch K2 can be considered as the main switch, and its specific type can be a contactor or a relay, etc., without being specifically limited here.

[0104] Based on the example above, in practical applications, when it is necessary to power on the electrical equipment 102, the first switch K1 can be turned on first to perform fault detection of the transistor module 130.

[0105] If the transistor module 130 is fault-free, the second switching circuit 120 can be turned on (e.g., Figure 2 The fourth switch K4 in the circuit is activated, and at this time, the first capacitor C1 in the RC pre-charge circuit begins to charge.

[0106] When the voltage across the first capacitor C1 reaches the preset voltage value, the second switch K2 can be further turned on. At this time, the first resistor R1 is short-circuited by the second switch K2, thereby avoiding additional energy consumption on the first resistor R1 when the main circuit is working stably, effectively saving the power consumption of the power supply 101.

[0107] Optionally, the transistor module 130 includes N bridge arm sub-circuits, which are connected in parallel between the first node P and the second node Q. Each bridge arm sub-circuit includes a first transistor, a third node S, and a second transistor connected in series. N is an integer greater than 1. The third node S is used to connect the electrical device 102.

[0108] The bridge arm sub-circuit may include an upper bridge arm and a lower bridge arm. Typically, the upper bridge arm is located on the side where the positive bus is located, while the lower bridge arm is located on the side where the negative bus is located. Specifically, in this embodiment, the first transistor may correspond to the upper bridge arm, and the second transistor may correspond to the lower bridge arm.

[0109] The number N of the bridge arm sub-circuits can be selected as needed. For example, when the transistor module is used to invert DC to two-phase AC, or when the transistor module is used to form an H-bridge circuit with a DC motor, N can be equal to 2. When the transistor module is used to invert DC to three-phase AC, N can be equal to 3.

[0110] In this embodiment, the transistor module 130 includes N bridge arm sub-circuits. By controlling the on / off state of the first and second transistors in the N bridge arm sub-circuits, the transistor module 130 is made to be in different working states. The controller 140 can obtain the voltage of the second node Q in these working states, and determine whether the transistor module 130 has a fault and the type of fault based on the voltage of the second node Q. It can also reliably locate the faulty transistor, thereby effectively improving the fault detection effect of the transistor module 130.

[0111] like Figure 2 As shown, in one example, transistor module 130 is used to invert DC power into three-phase AC power and supply it to electrical equipment 102, such as a three-phase motor. Accordingly, the three bridge arm sub-circuits can correspond to the three phases respectively, and are denoted as U, V, and W. The first transistor (corresponding to the upper bridge arm) in each bridge arm sub-circuit can be labeled H, and the second transistor (corresponding to the lower bridge arm) can be labeled L. Thus, the six transistors in transistor module 130 can be denoted as UH, UL, VH, VL, WH, and WL respectively. The third node in each bridge arm sub-circuit can be electrically connected to the corresponding circuit of the three-phase motor.

[0112] like Figure 3 As shown in the embodiment of this application, a fault detection method is also provided, applied to the above-mentioned fault detection system. The method includes:

[0113] Step 301: When the first switching circuit is turned on and the second switching circuit is turned off, acquire voltage detection data. The voltage detection data is obtained by collecting the voltage of the first node and the voltage of the second node.

[0114] Step 302: Based on the voltage detection data, determine the fault detection result of the transistor module.

[0115] As described above, when the first switch circuit is on and the second switch circuit is off, the main circuit of the fault detection system may not be in a fully on state. For example, the relevant electrical equipment may not be powered on at this time.

[0116] Step 301 can be performed when the first switching circuit is turned on and the second switching circuit is turned off, by acquiring voltage detection data. In this embodiment, the voltage detection data can be considered to include at least one sub-data, each sub-data corresponding to a certain operating state of the transistor module, and each sub-data may include the voltage of the first node and the voltage of the second node.

[0117] The operating state of a transistor module can refer to the operating state of all transistors being off, the operating state of some transistors being on, or the operating state of all transistors, which can be set according to actual needs.

[0118] In step 302, the fault detection result of the transistor module can be determined based on the voltage detection data.

[0119] The fault detection results of a transistor module can be used to indicate whether a fault exists in the transistor module, the type of fault in the transistor module, or the specific location of the faulty transistor in the transistor module.

[0120] The fault detection method provided in this application is applied to a fault detection system. The method includes acquiring voltage detection data when a first switching circuit is on and a second switching circuit is off, and determining the fault detection result of the transistor module based on the voltage detection data. The voltage detection data is obtained by collecting the voltages of the first node and the second node. This application embodiment can detect faults in the transistor module even when the positive and negative terminals of the power supply are not connected, which helps improve the reliability of fault detection. Simultaneously, when a fault exists in the transistor module, the first switching circuit can be disconnected without load, thereby helping to reduce the number of times the first switching circuit is disconnected under load and improving its service life.

[0121] As for the method of determining the fault detection result of the transistor module based on voltage detection data, the following example can be used to understand it.

[0122] For example, when the transistor module is in an overall conducting state, if the voltage detection data indicates that the voltage of the first node is equal to the power supply voltage and the voltage of the second node is 0, then the fault detection result may be that there is an open circuit in the transistor.

[0123] When the transistor module is in a completely off operating state, if the voltage detection data indicates that the voltage of the first node is the same as the voltage of the second node, the fault detection result may be that there is a short circuit in the transistor.

[0124] When multiple transistors exist in a transistor module, by controlling the on / off state of these transistors individually, the transistor module can operate in different states. By acquiring the voltage of the first node and the voltage of the second node in each state, the fault type and specific location of the faulty transistor can be determined by analyzing the voltage detection data. Specific examples will be provided below.

[0125] Optionally, in step 301, acquiring voltage detection data includes:

[0126] Obtain the first voltage of the second node when the transistor module is in the off state;

[0127] When the first voltage is 0, the second voltage of the first node and the third voltage of the second node are obtained when the transistor module is in the on state.

[0128] In this embodiment, the off state of the transistor module can refer to the operating state in which all transistors in the transistor module are off. Normally, when the transistor module is in the off state, the second node is not connected to the positive terminal of the power supply, and the voltage detected at the second node, which is the first voltage mentioned above, is 0.

[0129] When the first voltage is 0, the second voltage of the first node and the third voltage of the second node can be further obtained when the transistor module is in the on state.

[0130] The conduction state of a transistor module can correspond to one operating state or multiple operating states. In the conduction state, at least one transistor in the transistor module is turned on. In some examples, by controlling the conduction of different transistors, the transistor module can operate in multiple states.

[0131] It is easy to understand that when the first voltage is not zero, the transistor module is in a normally-on state. At this time, the fault detection result can indicate that there is a short circuit in the transistor, but it may be difficult to further detect the location of the fault in the transistor module based on the second and third voltages. Therefore, in this embodiment, when the first voltage is zero, the second voltage of the first node and the third voltage of the second node are obtained when the transistor module is in the on state, so as to further detect the fault in the transistor module and improve the rationality of the fault detection process.

[0132] Optionally, when the transistor module includes N bridge arm sub-circuits, the conduction state includes at least one of the following:

[0133] Any one of the first transistors is turned on;

[0134] Any one of the second transistors is turned on;

[0135] The first transistor in any bridge arm sub-circuit is turned on, and the second transistor in any bridge arm sub-circuit is turned on.

[0136] Based on the above description, the bridge arm sub-circuit can include an upper bridge arm and a lower bridge arm. Typically, the upper bridge arm is located on the side where the positive bus is located, while the lower bridge arm is located on the side where the negative bus is located. The first transistor can correspond to the upper bridge arm, and the second transistor can correspond to the lower bridge arm.

[0137] When any one of the first transistors is turned on, and the other transistors are not turned on, theoretically the voltage of the second node should be 0. However, if the voltage of the second node is equal to the voltage of the first node, it indicates that there is a transistor short circuit at the lower bridge arm.

[0138] In any case, if the voltage of the second node is equal to the voltage of the first node when any of the second transistors are turned on and the other transistors are not turned on, it means that there is a short circuit in the transistors at the upper bridge arm.

[0139] It is evident that when either the first transistor or the second transistor is turned on, a short circuit fault can be detected in the lower or upper arm bridge.

[0140] Typically, the third node in each bridge arm sub-circuit is electrically connected to the device being used. Therefore, under normal circumstances, when the first transistor and the second transistor in any bridge arm sub-circuit are both turned on, the first node, the first transistor, the device being used, the second transistor, and the second node are interconnected, and the voltage at the second node is equal to the voltage at the first node. When the voltage at the second node is not equal to the voltage at the first node (for example, the voltage at the second node is 0), it indicates that there is an open circuit in the transistor. By properly arranging the on / off states of the first and second transistors in each bridge arm sub-circuit, the specific location of the open-circuit transistor can be detected.

[0141] As can be seen, in this embodiment, by reasonably setting the conduction state of the transistor module, the fault type and location of the transistor can be effectively determined based on the corresponding voltage detection data, thereby improving the fault detection effect.

[0142] Optionally, before acquiring the voltage detection data, the method further includes:

[0143] Upon receiving a power-on command for the target, the first switching circuit is turned on.

[0144] After determining the fault detection result of the transistor module based on the voltage detection data, the method further includes:

[0145] If the fault detection result indicates that there is no preset fault, control the second switch circuit to be turned on;

[0146] If the fault detection result indicates a preset fault, the first switch circuit is disconnected.

[0147] In this embodiment, the first switching circuit can be turned on upon receiving a power-on command. The second switching circuit can be in a normally open state and can remain open if no control command is received. In this case, the main circuit is not connected, and the electrical equipment is not powered on.

[0148] In this case, the process of acquiring voltage detection data and detecting faults in the transistor module, as described above, can be further carried out.

[0149] In the above embodiments, examples were given illustrating the voltage of the first node and the voltage of the second node under various fault conditions. In this embodiment, the types of faults can be distinguished, such as short circuit or open circuit, and preset faults can be set according to these types. For example, a short circuit fault can be set as a preset fault.

[0150] If the fault detection result indicates a preset fault, the first switching circuit can be disconnected to end the fault detection process. Since the main circuit is not conducting, the first switching circuit is not disconnected under load at this time, thus reducing the number of times it is disconnected under load and extending the service life of the first switching circuit.

[0151] When the voltage at the first node and the voltage at the second node are normal in the voltage detection data, the fault detection result can indicate no fault. Alternatively, the voltage at the first node and the voltage at the second node may be abnormal in the voltage detection data, but the confirmed fault detection result does not indicate a preset fault. Both of these situations can be described as the fault detection result indicating no preset fault.

[0152] For example, combining Figure 2 When the fault detection result indicates that there is an open circuit in the transistor module, although it is impossible to provide three-phase AC power to the motor, other electrical equipment in the electric vehicle can be powered by high voltage.

[0153] If the fault detection result indicates that there is no preset fault, the second switch circuit can be further controlled to conduct. At this time, the main circuit is conducted, and electrical equipment other than the electrical equipment controlled by the faulty transistor module can be connected to high voltage.

[0154] In this embodiment, controlling the on / off state and the conduction sequence of the first and second switching circuits helps to improve the service life of the first switching circuit.

[0155] Optionally, if the fault detection system includes a third switching circuit, the method further includes:

[0156] Upon receiving a power-on command from the target, the third switch circuit is disconnected.

[0157] The target power-on command can be a power-on command for the electrical device controlled by the transistor module. Of course, in some examples, the target power-on command can also be a power-on command for any electrical device connected to the aforementioned power supply.

[0158] As shown above, the third switch circuit can be connected in series in the branch where the passive discharge resistor is located. When the target power-on command is received, in order to prevent the branch where the passive discharge resistor is located from continuously conducting the first node and the second node, the third switch circuit can be controlled to disconnect, so as to ensure that the obstacle detection of the transistor module can be performed normally.

[0159] In one example, after determining the fault detection result of the transistor module based on voltage detection data, the method further includes:

[0160] If the fault detection result indicates that there is no fault, control the third switch circuit to turn on.

[0161] In one example, the third switching circuit can be a normally closed switching circuit. Accordingly, if the fault detection result indicates that there is no fault, the third switching circuit is controlled to be turned on and maintained, and the subsequent passive discharge resistor can work normally.

[0162] The following combination Figure 2 The fault detection device shown is used to illustrate the fault detection method provided in the embodiments of this application. This fault detection device can be located in an electric vehicle, and the electrical equipment therein can be a motor.

[0163] like Figure 4 As shown, fault detection methods may include:

[0164] Step 401, the vehicle is in low-voltage power-on state;

[0165] Step 402: Receive the high voltage command;

[0166] Step 403: Determine if the controller is currently reporting an insulation or drive module fault; if yes, proceed to step 412; if no, proceed to step 404.

[0167] This driver module can correspond to the transistor module described above. In one example, the controller can read historical operating records from the relevant storage device to determine if there are any reported insulation or driver module faults.

[0168] Step 404: Disconnect the fourth switch K4 and close only the first switch K1;

[0169] Step 405: Determine whether the voltage at the second node of the transistor module is 0 when the transistor is not turned on; if yes, proceed to step 406; if no, proceed to step 409.

[0170] If the transistor module is not turned on, it can be assumed that all the transistors in the transistor module are in a turned-off state.

[0171] Step 406: Perform detection sequentially, changing the state of only one bridge arm of the upper and lower bridge each time according to the detection column;

[0172] This step can be considered as controlling the on / off state of any two transistors among UH, UL, VH, VL, WH, and WL. While controlling the on / off state of any two transistors, the other transistors can remain off.

[0173] Step 407: Determine whether the test result is consistent with the normal value in the test list; if yes, proceed to step 408; if no, proceed to step 410.

[0174] In this step, the normal values ​​for the detection list can be pre-established. The table below shows an example of normal values ​​for the detection list:

[0175]

[0176] Where 0 indicates that the voltage of the second node is 0, and 1 indicates that the voltage of the second node is equal to the voltage of the first node.

[0177] Step 408: Apply high voltage as normal;

[0178] Step 409: Determine that at least one bridge arm of the upper and lower bridges of the drive module is directly connected, and proceed to step 412.

[0179] Step 410: Determine if there is a short circuit between the upper and lower bridges; if yes, proceed to step 412; if no, proceed to step 411.

[0180] Step 411: Report a specific open-circuit fault in a certain phase drive module, and then apply high voltage normally.

[0181] In this step, high voltage can be applied normally, but the pipe opening and torque commands are not executed. In other words, electrical equipment other than the motor can use high voltage normally.

[0182] Step 412: Do not execute the power-on command.

[0183] As can be seen, the embodiments of this application disconnect the relevant switches by the controller before applying high voltage, which can accurately detect whether the drive module is damaged, whether it is an open circuit or a short circuit, and locate the specific bridge arm that is open before power-on without closing the positive and negative circuits. At the same time, it is not necessary to connect the main circuit for detection, which reduces the number of times the main circuit switch module is cut off under load and protects the life of the switch module.

[0184] like Figure 5 As shown in the figure, this application embodiment also provides a fault detection device, the device comprising:

[0185] The acquisition module 501 is used to acquire voltage detection data when the first switching circuit is turned on and the second switching circuit is turned off. The voltage detection data is obtained by collecting the voltage of the first node and the voltage of the second node.

[0186] The first control module 502 is used to determine the fault detection result of the transistor module based on the voltage detection data.

[0187] Optionally, module 501 includes:

[0188] The first acquisition unit is used to acquire the first voltage of the second node when the transistor module is in the off state;

[0189] The second acquisition unit is used to acquire the second voltage of the first node and the third voltage of the second node when the transistor module is in the on state, when the first voltage is 0.

[0190] Optionally, when the transistor module includes N bridge arm sub-circuits, the conduction state includes at least one of the following:

[0191] Any one of the first transistors is turned on;

[0192] Any one of the second transistors is turned on;

[0193] The first transistor in any bridge arm sub-circuit is turned on, and the second transistor in any bridge arm sub-circuit is turned on.

[0194] Optionally, the fault detection device may further include:

[0195] The second control module is used to control the first switching circuit to turn on when a power-on command for the target is received.

[0196] The third control module is used to control the second switching circuit to conduct when the fault detection result indicates that there is no preset fault.

[0197] The fourth control module is used to control the first switching circuit to disconnect when the fault detection result indicates a preset fault.

[0198] Optionally, if the fault detection system includes a third switching circuit, the fault detection device may further include:

[0199] The fifth control module is used to control the third switching circuit to disconnect upon receiving a power-on command for the target.

[0200] It should be noted that the fault detection device is a device corresponding to the fault detection method described above. All implementation methods in the above method embodiments are applicable to the embodiments of this device and can achieve the same technical effect.

[0201] Figure 6 A schematic diagram of the hardware structure of the electronic device provided in an embodiment of this application is shown.

[0202] An electronic device may include a processor 601 and a memory 602 storing computer program instructions.

[0203] Specifically, the processor 601 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0204] Memory 602 may include mass storage for data or instructions. For example, and not limitingly, memory 602 may include a hard disk drive (HDD), floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 602 may include removable or non-removable (or fixed) media. Where appropriate, memory 602 may be internal or external to the integrated gateway disaster recovery device. In a particular embodiment, memory 602 is non-volatile solid-state memory.

[0205] Memory may include read-only memory (ROM), random access memory (RAM), disk storage media devices, optical storage media devices, flash memory devices, and electrical, optical, or other physical / tangible memory storage devices. Therefore, typically, memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the methods according to this disclosure.

[0206] The processor 601 implements any of the fault detection methods described in the above embodiments by reading and executing computer program instructions stored in the memory 602.

[0207] In one example, the electronic device may also include a communication interface 603 and a bus 604. Wherein, as... Figure 6 As shown, the processor 601, memory 602, and communication interface 603 are connected through bus 604 and complete communication with each other.

[0208] The communication interface 603 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0209] Bus 604 includes hardware, software, or both. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 604 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, this application contemplates any suitable bus or interconnect.

[0210] Furthermore, in conjunction with the fault detection methods in the above embodiments, this application embodiment can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when these computer program instructions are executed by a processor, they implement any of the fault detection methods in the above embodiments.

[0211] It should be clarified that this application is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of this application is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this application.

[0212] The functional blocks shown in the above block diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored on a machine-readable medium or transmitted over a transmission medium or communication link via data signals carried on a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, etc. Code segments can be downloaded via computer networks such as the Internet, intranets, etc.

[0213] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0214] The aspects of this disclosure have been described above with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that each block in the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that these instructions, executable via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field-programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by special-purpose hardware performing the specified functions or actions, or can be implemented by a combination of special-purpose hardware and computer instructions.

[0215] The above are merely specific embodiments of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A fault detection system, characterized by, The fault detection system comprises: a first switch circuit, a first end of the first switch circuit being connected to a positive pole of a power supply, a second end of the first switch circuit being connected to a first node; a second switch circuit, a first end of the second switch circuit being connected to a negative pole of the power supply, a second end of the second switch circuit being connected to a second node; a transistor module, a first end of the transistor module being connected to the first node, a second end of the transistor module being connected to the second node; a controller, the controller being configured to, in a case that the first switch circuit is turned on, the second switch circuit is turned off, and the transistor module is in an off state, acquire a first voltage of the second node, determine whether the transistor module has a short circuit based on the first voltage; in a case that the first voltage is zero, make the transistor module enter an on state, and acquire a second voltage of the first node and a third voltage of the second node, and determine whether the transistor module has an open circuit based on the second voltage and the third voltage.

2. The fault detection system of claim 1, wherein, The fault detection system further comprises a first capacitor, the first switch circuit comprises a first switch and a first resistor; two ends of the first capacitor are respectively connected to the first node and the second node; the first switch and the first resistor are connected in series between the first node and the positive pole of the power supply.

3. The fault detection system of claim 1 or 2, wherein, The fault detection system further comprises a second resistor and a third switch circuit, the second resistor and the third switch circuit are connected in series between the first node and the second node.

4. The fault detection system of claim 1, wherein, The first switch circuit further comprises a second switch, two ends of the second switch are respectively connected to the first node and the positive pole of the power supply.

5. The fault detection system of claim 1, wherein, The transistor module comprises N bridge arm sub-circuits, the N bridge arm sub-circuits are connected in parallel between the first node and the second node, each bridge arm sub-circuit comprises a first transistor, a third node and a second transistor connected in series, N is an integer greater than 1, and the third node is used for connecting an electrical device.

6. A fault detection method characterized by, The method applied to the fault detection system of any one of claims 1 to 5, the method comprises: acquiring voltage detection data in a case that the first switch circuit is turned on and the second switch circuit is turned off, the voltage detection data being obtained by collecting a voltage of the first node and a voltage of the second node; determining a fault detection result of the transistor module based on the voltage detection data; wherein the acquiring voltage detection data comprises: acquiring a first voltage of the second node when the transistor module works in an off state; in a case that the first voltage is zero, acquiring a second voltage of the first node and a third voltage of the second node when the transistor module works in an on state.

7. The fault detection method of claim 6, wherein, In a case that the transistor module comprises N bridge arm sub-circuits, the on state comprises at least one of the following: any first transistor is turned on; any second transistor is turned on; any first transistor in any bridge arm sub-circuit is turned on, and any second transistor in any bridge arm sub-circuit is turned on.

8. The fault detection method according to any one of claims 6-7, characterized in that, Before the acquiring voltage detection data, the method further comprises: In a case where a target power-on instruction is received, the first switch circuit is controlled to be turned on. After the fault detection result of the transistor module is determined based on the voltage detection data, the method further includes: In a case where the fault detection result indicates no preset fault, the second switch circuit is controlled to be turned on. In a case where the fault detection result indicates a preset fault, the first switch circuit is controlled to be turned off.

9. The fault detection method of claim 8, wherein, In a case where the fault detection system includes a third switch circuit, the method further includes: In a case where a target power-on instruction is received, the third switch circuit is controlled to be turned off.

10. A fault detection apparatus characterized by comprising: The apparatus includes: The acquisition module is configured to acquire voltage detection data in a case where the first switch circuit is turned on and the second switch circuit is turned off, the voltage detection data being obtained by collecting a voltage of the first node and a voltage of the second node; The first control module is configured to determine a fault detection result of the transistor module based on the voltage detection data. The acquisition of the voltage detection data includes: acquiring a first voltage of the second node when the transistor module works in an off state; In a case where the first voltage is zero, a second voltage of the first node and a third voltage of the second node are acquired when the transistor module works in an on state.

11. An electronic device, comprising: The device includes a processor and a memory having computer program instructions stored therein; The processor executes the computer program instructions to implement the fault detection method of any one of claims 6-9.

12. A computer storage medium, characterized in that The computer storage medium has computer program instructions stored thereon, and the computer program instructions are executed by the processor to implement the fault detection method of any one of claims 6-9.

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