Resistance test structure and method of testing the same

Abstract

The application relates to a resistance test structure and a test method thereof, which comprises a shunt resistance used in parallel with a to-be-tested resistance to form a parallel circuit, a power supply electrode connected with an input end of the parallel circuit and used for providing a test current, and a measurement electrode used for voltage measurement of the parallel circuit. In the application, the shunt resistance R2 is used for shunting, so that the current flowing through the to-be-tested resistance R1 is reduced, the test power is reduced, the measurement electrode can effectively measure the relevant voltage, and the resistance value of the to-be-tested resistance R1 can be effectively calculated according to the measured voltage and the test current provided by the power supply electrode. Therefore, the resistance value of the to-be-tested resistance R1 can be effectively and accurately calculated through the arrangement of the shunt resistance R2, the power supply electrode and the measurement electrode, and the measurement of the to-be-tested resistance R1 is completed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor testing, and in particular to a resistance test structure and a test method thereof. BACKGROUND

[0002] Stress migration test is of great significance for the evaluation of the reliability of metal interconnection lines. The test is to measure the resistance value of an integrated circuit chip again after it is placed at a certain temperature for a period of time.

[0003] However, because the power of the machine is limited, the stress migration test cannot accurately measure the resistance value of a large resistance. SUMMARY

[0004] Therefore, it is necessary to provide a resistance test structure and a test method thereof to solve the problem that the stress migration test in the prior art cannot accurately measure the resistance value of a large resistance.

[0005] To achieve the above-mentioned purpose, in one aspect, the present application provides a resistance test structure for measuring the resistance value of a to-be-tested resistance, comprising:

[0006] A shunt resistance is connected in parallel with the to-be-tested resistance to form a parallel circuit.

[0007] A power supply electrode is connected to the input end of the parallel circuit to provide a test current.

[0008] A measurement electrode is used to measure the voltage of the parallel circuit.

[0009] In the above-mentioned resistance test structure, the shunt resistance R2, the power supply electrode, and the measurement electrode are provided to effectively and accurately calculate the resistance value of the to-be-tested resistance R1, thereby completing the measurement of the to-be-tested resistance R1.

[0010] In one embodiment, the measurement electrode comprises:

[0011] A second electrode is connected to the input end of the parallel circuit.

[0012] A ground electrode is connected to the output end of the to-be-tested resistance and the shunt resistance.

[0013] A third electrode is connected to the wire between the ground electrode and the shunt resistance.

[0014] A sixth electrode is connected to the wire between the ground electrode and the to-be-tested resistance.

[0015] In one embodiment, the ground electrode comprises a fourth electrode and a fifth electrode, the fourth electrode is connected to the output end of the shunt resistance, and the fifth electrode is connected to the output end of the to-be-tested resistance.

[0016] The third electrode is connected to a wire between the fourth electrode and the shunt resistance, and the sixth electrode is connected to a wire between the fifth electrode and the to-be-tested resistance.

[0017] In one of the embodiments, the shunt resistance has a resistance value greater than a first threshold value.

[0018] In one of the embodiments, the shunt resistance comprises a plurality of resistances.

[0019] In one of the embodiments, the plurality of resistances are connected in series.

[0020] In one of the embodiments, the shunt resistance has a resistance value less than a second threshold value.

[0021] The application also provides a resistance testing method for measuring a resistance value of a to-be-tested resistance by using a testing structure, the testing structure comprising a shunt resistance, a power supply electrode, and a measurement electrode, the shunt resistance being used to be connected in parallel with the to-be-tested resistance to form a parallel circuit, the power supply electrode being connected to an input end of the parallel circuit,

[0022] The method comprises:

[0023] providing a test current through the power supply electrode;

[0024] measuring a voltage of the parallel circuit through the measurement electrode;

[0025] calculating the resistance value of the to-be-tested resistance according to a result of the voltage measurement.

[0026] In one of the embodiments, the measurement electrode comprises a second electrode, a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode, the second electrode being connected to the input end of the parallel circuit, the fourth electrode being connected to an output end of the shunt resistance, the fifth electrode being connected to an output end of the to-be-tested resistance, the third electrode being connected to a wire between the fourth electrode and the shunt resistance, and the sixth electrode being connected to a wire between the fifth electrode and the to-be-tested resistance,

[0027] providing a test current through the power supply electrode, comprising:

[0028] providing a first test current through the power supply electrode;

[0029] the voltage measurement of the parallel circuit through the measurement electrode, comprising:

[0030] measuring a first voltage across the shunt resistance through the second electrode and the third electrode;

[0031] measuring a second voltage across the to-be-tested resistor by the second electrode and the sixth electrode;

[0032] measuring a third voltage of a first parasitic resistance between the third electrode and the fourth electrode;

[0033] measuring a fourth voltage of a second parasitic resistance between the fifth electrode and the sixth electrode;

[0034] calculating the resistance value of the to-be-tested resistor according to the results of the voltage measurement, comprising:

[0035] calculating the resistance value of the to-be-tested resistor according to the first test current, the first voltage, the second voltage, the third voltage and the fourth voltage.

[0036] In one of the embodiments, the providing a test current by the power supply electrode further comprises:

[0037] providing a second test current by the power supply electrode;

[0038] the voltage measurement of the parallel circuit by the measurement electrode pair further comprises:

[0039] measuring a fifth voltage across the shunt resistor by the second electrode and the third electrode;

[0040] measuring a sixth voltage of a first parasitic resistance between the third electrode and the fourth electrode;

[0041] calculating the resistance value of the to-be-tested resistor according to the first test current, the first voltage, the second voltage, the third voltage and the fourth voltage, comprising:

[0042] calculating the resistance value of the to-be-tested resistor according to the first test current, the first voltage, the second voltage, the third voltage, the fourth voltage, the second test current, the fifth voltage and the sixth voltage. BRIEF DESCRIPTION OF DRAWINGS

[0043] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort on the basis of these drawings.

[0044] Figure 1 a circuit schematic diagram of the resistance test structure provided in one embodiment;

[0045] Figure 2 Figure 2 shows an equivalent circuit diagram of the resistance test structure shown in Figure 1 ; Figure 1

[0046] Figure 3 shows an equivalent circuit diagram of the resistance test structure in another embodiment; Figure 3

[0047] Figure 4 shows a flow chart of the resistance test method provided in an embodiment. Figure 4 Figure 1 shows a resistance test structure provided in an embodiment.

[0048] DETAILED DESCRIPTION

[0049] For the purposes of the present application, reference will be made to the accompanying drawings in which:

[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application.

[0051] It should be understood that when an element or layer is referred to as being "on", "adjacent", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on", "directly adjacent", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be appreciated that, although terms such as first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, "a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.

[0052] ​Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and / or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is inverted, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The devices can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0053] As used herein, the singular form "a", "an" and "the" include plural references unless the context clearly dictates otherwise. As should also be apparent, the term "includes" or "comprising" or "has" or "has" or the like as used herein specifies the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

[0054] Please refer to Figure 1 In one embodiment, a resistance test structure is provided for measuring a resistance value of a resistance under test R1, comprising: a shunt resistance R2, a supply electrode 10, and a measurement electrode.

[0055] The shunt resistance R2 is connected in parallel with the resistance under test R1, and together with the resistance under test R1 forms a parallel circuit. The shunt resistance R2 can comprise a plurality of resistances or a single resistance, which is not limited herein. As an example, the shunt resistance R2 is formed by a plurality of resistances connected in series. When formed by a plurality of resistances connected in series, it is convenient to form a shunt resistance R2 with a large resistance value. Of course, in other examples, the shunt resistance R2 can also be provided in other forms, for example, it can also be formed by a plurality of resistances connected in parallel, which is not limited herein.

[0056] The supply electrode 10 is located at the input end of the parallel circuit formed by the shunt resistance R2 and the resistance under test R1, and is used to provide a test current. The test current flows through the parallel circuit, and the current flowing through the resistance under test R1 is I1, and the current flowing through the shunt resistance R2 is I2.

[0057] The measurement electrode can comprise a plurality of electrodes, which can be provided according to actual conditions. The measurement electrode is used to measure the voltage of the parallel circuit, for example, it can comprise measuring the voltage of the resistance under test R1 and the shunt resistance R2.

[0058] In the embodiment, the shunt resistor R2 is used to shunt the current, so that the current flowing through the resistance R1 to be measured is reduced, the test power is reduced, and the measuring electrode can effectively measure the relevant voltage. According to the measured voltage and the test current provided by the supply electrode 10, the resistance value of the resistance R1 to be measured can be effectively calculated. Therefore, by using the shunt resistor R2, the supply electrode 10 and the measuring electrode, the resistance value of the resistance R1 to be measured can be effectively and accurately calculated, and the measurement of the resistance R1 to be measured is completed.

[0059] In one embodiment, referring to Figure 3 , the measuring electrode includes a second electrode 21, a ground electrode 24, a third electrode 22 and a sixth electrode 23.

[0060] The second electrode 21 is connected to the input end of the parallel circuit. The ground electrode 24 is connected to the output end of the resistance R1 to be measured and the shunt resistor R2. The third electrode 22 is connected to the wire between the ground electrode 24 and the shunt resistor R2. The sixth electrode 23 is connected to the wire between the ground electrode 24 and the resistance R1 to be measured.

[0061] For example, referring to Figure 2 The ground electrode 24 can include a fourth electrode 241 and a fifth electrode 242. The fourth electrode 241 is connected to the output end of the shunt resistor R2. The fifth electrode 242 is connected to the output end of the resistance R1 to be measured. The third electrode 22 is connected to the wire between the fourth electrode 241 and the shunt resistor R2, and the sixth electrode 23 is connected to the wire between the fifth electrode 242 and the resistance R1 to be measured.

[0062] Of course, in some cases, as shown in Figure 3 , the ground electrode 24 can also be one electrode, which can be connected to the output end of the parallel circuit.

[0063] The ground electrode 24 can be grounded, so the voltage is zero. According to the difference between the second electrode 21 and the ground electrode 24, the voltage value V of the parallel circuit formed by the resistance R1 to be measured and the shunt resistor R2 can be obtained, for example, the voltage value V can be obtained according to the difference between the second electrode 21 and the fourth electrode 241; or the voltage value V can be obtained according to the difference between the second electrode 21 and the fifth electrode 242.

[0064] The third electrode 22 is connected to the wire between the fourth electrode 241 and the shunt resistor R2, and the voltage value V2 of the shunt resistor R2 can be obtained according to the difference between the second electrode 21 and the third electrode 22. The voltage value V3 of the first parasitic resistor R3 between the third electrode 22 and the ground electrode 24 can be obtained according to the difference between the third electrode 22 and the ground electrode 24. The voltage value V3 of the first parasitic resistor R3 can also be obtained according to the difference between the third electrode 22 and the fourth electrode 241. The first parasitic resistor R3 is the parasitic resistance of the wire between the third electrode 22 and the ground electrode 24.

[0065] The sixth electrode 23 is connected to the wire between the fifth electrode 242 and the to-be-measured resistor R1, and the voltage value V1 of the to-be-measured resistor R1 can be obtained according to the difference between the second electrode 21 and the sixth electrode 23. The voltage value V4 of the second parasitic resistor R4 between the sixth electrode 23 and the ground electrode 24 can be obtained according to the difference between the sixth electrode 23 and the ground electrode 24. The voltage value V4 of the second parasitic resistor R4 can also be obtained according to the difference between the sixth electrode 23 and the fifth electrode 242. The second parasitic resistor R4 is the parasitic resistance of the wire between the sixth electrode 23 and the ground electrode 24.

[0066] As an example, the power supply electrode 10 provides a first test current I a , and the first test current I a can be divided into a current I 1a flowing through the branch where the to-be-measured resistor R1 is located and a current I 2a flowing through the branch where the shunt resistor R2 is located. At this time, the voltage value V a of the parallel circuit formed by the to-be-measured resistor R1 and the shunt resistor R2 can be obtained according to the difference between the second electrode 21 and the ground electrode 24. The voltage value V 2a of the shunt resistor R2 can be obtained according to the difference between the second electrode 21 and the third electrode 22. The voltage value V 3a of the first parasitic resistor R3 between the third electrode 22 and the fourth electrode 241 can be obtained according to the difference between the third electrode 22 and the fourth electrode 241. The voltage value V 4a of the second parasitic resistor R4 between the sixth electrode 23 and the fifth electrode 242 can be obtained according to the difference between the sixth electrode 23 and the fifth electrode 242.

[0067] Since the shunt resistor R2 and the first parasitic resistor R3 are in series, the currents of the two are I 2a . The current I 2aWith voltage V a The relationship between them can be obtained as follows:

[0068] (R2+R3)*I 2a =V a (1)

[0069] Based on the current I of the shunt resistor R2 2a With voltage V 2a The relationship between them can be obtained as follows:

[0070] I 2a =V 2a / R2(2)

[0071] Substituting expression (2) into (1) gives: (R2+R3)*V 2a / R2=V a (3)

[0072] Expression (3) simplifies to R3 = R2 * V 3a / (V a -V 3a (4)

[0073] Similarly, we can obtain: R4 = R1 * V 4a / (V a -V 4a (5)

[0074] According to the formula for calculating parallel resistance, 1 / R = 1 / (R2 + R3) + 1 / (R1 + R4) (6) and 1 / R = I a / V a (7) We can obtain:

[0075] 1 / (R2+R2*V 3a / (V a -V 3a ))+1 / (R1+R1*V 4a / (V a -V 4a ))=I a / V a (8)

[0076] The power supply electrode 10 can also provide a second test current I. b Second test current I b The current flowing through the shunt resistor R2 is represented as current I. 2b At this point, based on the difference between the second electrode 21 and the ground electrode 24, the voltage value V of the parallel circuit formed by the resistor R1 and the shunt resistor R2 can be obtained. b Based on the difference between the third electrode 22 and the fourth electrode 241, the voltage value V of the first parasitic resistance R3 between the third electrode 22 and the fourth electrode 241 can be obtained.3b .

[0077] Since the shunt resistor R2 is in series with the first parasitic resistor R3, the current of both is I 2b . According to the relationship between the current I 2b and the voltage V b of the parallel circuit branch where the shunt resistor R2 and the first parasitic resistor R3 are located, we can get:

[0078] (R2+R3)*I 2b =V b (9)

[0079] According to the relationship between the current I 2b and the voltage V 2b of the shunt resistor R2, we can get:

[0080] I 2b =V 2b / R2(10)

[0081] Substitute expression (10) into (9) to get: (R2+R3)*V 2b / R2=V b (11)

[0082] Simplifying expression (11) can get R3=R2*V 3b / (V b -V 3b )(12)

[0083] According to 1 / R=I b / V b (13) we can get:

[0084] 1 / (R2+R2*V 3b / (V b -V 3b ))=I b / V b (14)

[0085] Substitute expression (14) into expression (8) to get:

[0086] I b / V b +1 / (R1+R1*V 4a / (V a -V 4a ))=I a / V a (15)

[0087] Simplifying expression (15) can get 1 / R1=(I a / V a -I b / Vb (1+V 4a / (V a -V 4a ))(16), the resistance value of the to-be-tested resistor R1 is equal to 1 / (I a / V a -I b / V b (1+V 4a / (V a -V 4a ))).

[0088] The resistance value R2 of the shunt resistor R2 can be calculated through the expression (14).

[0089] At this time, when calculating the resistance value of the to-be-tested resistor R1, the resistance values of the first parasitic resistor R3 and the second parasitic resistor R4 are considered, so that the resistance value of the shunt resistor R2 can be accurately obtained at the same time when the resistance value of the to-be-tested resistor R1 is obtained.

[0090] In the embodiment, the measuring electrode includes the second electrode 21, the ground electrode 24, the third electrode 22 and the sixth electrode 23, so that the voltage values at both ends of the to-be-tested resistor R1 and the shunt resistor R2 can be more accurately obtained.

[0091] In one embodiment, the resistance value of the shunt resistor R2 is greater than a first threshold value.

[0092] The first threshold value can be 100Ω.

[0093] In the embodiment, since the voltage measurement value on the shunt resistor is not accurate when the resistance value of the shunt resistor is less than the first threshold value, limiting the resistance value of the shunt resistor R2 to be greater than the first threshold value can make the resistance value of the to-be-tested resistor R1 more accurate and easier to calculate.

[0094] In one embodiment, the resistance value of the shunt resistor R2 is less than a second threshold value.

[0095] The second threshold value can be the minimum value of the resistance value range of the to-be-tested resistor R1, or can be 1000Ω, which is not limited herein.

[0096] In the embodiment, limiting the resistance value of the shunt resistor R2 to be less than the second threshold value can avoid the influence of the Joule heat generated by the shunt resistor R2 on the test structure, and more accurately calculate the resistance value of the to-be-tested resistor R1.

[0097] Please refer to Figure 4Yet another embodiment of the present application also provides a resistance testing method for measuring the resistance value of a resistance to be tested R1 by using a testing structure. The testing structure comprises a shunt resistance R2, a power supply electrode 10 and a measurement electrode. The shunt resistance R2 is used to be connected in parallel with the resistance to be tested R1 to form a parallel circuit, and the power supply electrode 10 is connected to the input end of the parallel circuit. The method comprises the following steps:

[0098] Step S10, providing a testing current through the power supply electrode 10;

[0099] Step S20, measuring the voltage of the parallel circuit through the measurement electrode;

[0100] Step S30, calculating the resistance value of the resistance to be tested R1 according to the voltage measurement result.

[0101] In step S10, the testing current of the parallel circuit is provided through the power supply electrode 10, and the testing current flows through the resistance to be tested R1 and the shunt resistance R2.

[0102] In step S20, the voltage between the two ends of the parallel circuit is measured by using the measurement electrode, and the voltage value between the two ends of the parallel circuit can be obtained.

[0103] In step S30, according to the measurement result of the measurement electrode on the parallel circuit and the testing current, the resistance value of the resistance to be tested R1 can be calculated based on the relationship between the current and the voltage.

[0104] In the embodiment, the shunt resistance R2 is used for shunting, so that the current flowing through the resistance to be tested R1 is reduced, thereby reducing the testing power, and then the measurement electrode can effectively measure the related voltage, and the resistance value of the resistance to be tested R1 can be effectively calculated according to the measured voltage and the testing current provided by the power supply electrode 10. Therefore, by arranging the shunt resistance R2, the power supply electrode 10 and the measurement electrode, the resistance value of the resistance to be tested R1 can be effectively and accurately calculated, and the measurement of the resistance to be tested R1 is completed.

[0105] In one embodiment, step S10 comprises:

[0106] Step S11, providing a first testing current I a through the power supply electrode 10;

[0107] Step S20 comprises:

[0108] Step S21, measuring a first voltage V 2a between the two ends of the shunt resistance R2 by using the second electrode 21 and the third electrode 22;

[0109] Step S22, measuring a second voltage V 1a between the two ends of the resistance to be tested R1 by using the second electrode 21 and the sixth electrode 23;

[0110] Step S23, measuring the third voltage V 3a ;

[0111] Step S24, measuring the fourth voltage V 4a ;

[0112] Step S30 includes:

[0113] Step S31, calculating the resistance value of the resistance R1 according to the first test current I a , the first voltage V 2a , the second voltage V 1a , the third voltage V 3a , and the fourth voltage V 4a .

[0114] In step S11, the first test current I a of the parallel circuit is provided by the supply electrode 10, and the first test current flows through the resistance R1 to be measured and the shunt resistance R2.

[0115] In step S21, the second electrode 21 and the third electrode 22 in the measuring electrode are applied to measure the voltage across the shunt resistance R2, and the voltage value across the shunt resistance R2 can be obtained as the first voltage V 2a .

[0116] In step S22, the second electrode 21 in the measuring electrode is applied to measure the voltage across the resistance R1 to be measured, and the voltage value across the resistance R1 to be measured can be obtained as the second voltage V 1a .

[0117] In step S23, the third electrode 22 in the measuring electrode is applied to measure the voltage of the first parasitic resistance between the third electrode 22 and the fourth electrode 241, and the voltage value of the first parasitic resistance can be obtained as the third voltage V 3a .

[0118] In step S24, the sixth electrode 23 in the measuring electrode is applied to measure the voltage of the second parasitic resistance R4 between the fifth electrode 242 and the sixth electrode 23, and the voltage value of the second parasitic resistance R4 can be obtained as the fourth voltage V 4a .

[0119] In step S31, the resistance value of the resistance R1 to be measured is calculated according to the first test current I a , the first voltage V 2a , the second voltage V 1a , the third voltage V 3a , and the fourth voltage V4a The resistance value of the resistance under test R1 can be calculated based on the relationship between the current and the voltage.

[0120] In one embodiment, step S10 comprises:

[0121] Step S12, providing a second test current I b through the supply electrode 10.

[0122] Step S20 comprises:

[0123] Step S25, measuring a fifth voltage V 2b across the shunt resistance R2 by the second electrode 21 and the third electrode 22.

[0124] Step S26, measuring a sixth voltage V 3b across the first parasitic resistance between the third electrode 22 and the fourth electrode 24 by the third electrode 22.

[0125] Step S31 comprises:

[0126] Step S311, calculating the resistance value of the shunt resistance R2 based on the first test current I a , the first voltage V 2a , the second voltage V 1a , the third voltage V 3a , the fourth voltage V 4a , the second test current I b , the fifth voltage V 2b , and the sixth voltage V 3b .

[0127] At this time, when the resistance under test is tested by the resistance testing method according to the present embodiment, step S11 can be performed first, then steps S21 to S24 (the execution order of steps S21 to S24 does not have to be sequential), then step S12, then steps S25 to S26 (the execution order of steps S25 to S26 does not have to be sequential), and finally step S311.

[0128] In step S12, the second test current I b of the parallel circuit is provided through the supply electrode 10, and the second test current flows through the resistance under test R1 and the shunt resistance R2.

[0129] In step S25, the voltage across the shunt resistance R2 is measured by the second electrode 21 and the third electrode 22 of the measuring electrode, and the voltage value across the shunt resistance R2 can be obtained as the fifth voltage V 2b .

[0130] In step S26, the voltage of the first parasitic resistance between the third electrode 22 and the fourth electrode 241 is measured using the third electrode 22 and the fourth electrode 241. The voltage value of the first parasitic resistance can be obtained and used as the sixth voltage V. 3b .

[0131] In step S311, based on the first test current I a First voltage V 2a Second voltage V 1a Third voltage V 3a Fourth voltage V 4a Second test current I b Fifth voltage V 2b And the sixth voltage V 3b Based on the relationship between current and voltage, the resistance value of the resistor to be measured, R1, is calculated.

[0132] In this embodiment, the resistance value of the resistor R1 to be tested can be calculated according to expressions (1) to (16), and the resistance value of the shunt resistor R2 can also be calculated.

[0133] It should be understood that, although Figure 4 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 4 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0134] In the description of this specification, references to terms such as "some embodiments," "other embodiments," and "ideal embodiments" indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0135] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0136] The above embodiments only express several implementation ways of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation to the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, which all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A resistance test structure for measuring a resistance value of a resistance under test, characterized in that, The test structure comprises: a shunt resistor connected in parallel with the to-be-tested resistor to form a parallel circuit; a power supply electrode connected to an input end of the parallel circuit to provide a test current; a measurement electrode for voltage measurement of the parallel circuit, the measurement electrode comprising: a second electrode connected to the input end of the parallel circuit; a ground electrode connected to an output end of the to-be-tested resistor and the shunt resistor; a third electrode connected to a wire between the ground electrode and the shunt resistor, and a voltage value of a first parasitic resistor between the third electrode and the ground electrode can be obtained according to a difference between the third electrode and the ground electrode; and a sixth electrode connected to a wire between the ground electrode and the to-be-tested resistor, and a voltage value of a second parasitic resistor between the sixth electrode and the ground electrode can be obtained according to a difference between the sixth electrode and the ground electrode; the power supply electrode is configured to provide two different test currents, and the resistance of the to-be-tested resistor is solved based on the first voltage, the second voltage, the third voltage, the fourth voltage and the corresponding test current obtained in each test.

2. The resistance test structure according to claim 1, wherein the ground electrode comprises a fourth electrode connected to the output end of the shunt resistor and a fifth electrode connected to the output end of the to-be-tested resistor, the third electrode is connected to a wire between the fourth electrode and the shunt resistor, and the sixth electrode is connected to a wire between the fifth electrode and the to-be-tested resistor.

3. The resistance test structure of claim 1, wherein, The resistance of the shunt resistor is greater than a first threshold value.

4. The resistance test structure of claim 3, wherein, The shunt resistor comprises a plurality of resistors.

5. The resistance test structure of claim 4, wherein, The plurality of resistors are connected in series.

6. The resistance test structure of claim 3, wherein, The resistance of the shunt resistor is less than a second threshold value.

7. A resistance testing method for measuring a resistance value of a resistance to be measured using a test structure, characterized by, The test structure comprises a shunt resistor, a power supply electrode and a measurement electrode, the shunt resistor is connected in parallel with the to-be-tested resistor to form a parallel circuit, the power supply electrode is connected to an input end of the parallel circuit, and the measurement electrode comprises: a second electrode connected to the input end of the parallel circuit; a ground electrode connected to an output end of the to-be-tested resistor and the shunt resistor; a third electrode connected to a wire between the ground electrode and the shunt resistor, and a voltage value of a first parasitic resistor between the third electrode and the ground electrode can be obtained according to a difference between the third electrode and the ground electrode; and a sixth electrode connected to a wire between the ground electrode and the to-be-tested resistor, and a voltage value of a second parasitic resistor between the sixth electrode and the ground electrode can be obtained according to a difference between the sixth electrode and the ground electrode; the power supply electrode is configured to provide two different test currents, and the resistance of the to-be-tested resistor is solved based on the first voltage, the second voltage, the third voltage, the fourth voltage and the corresponding test current obtained in each test. The method comprises: providing a test current through the power supply electrode; performing voltage measurement of the parallel circuit through the measurement electrode; and calculating the resistance of the to-be-tested resistor according to the result of the voltage measurement.

8. The method of resistance testing of claim 7, wherein, The measuring electrode includes a second electrode, a third electrode, a fourth electrode, a fifth electrode and a sixth electrode, the second electrode is connected to the input end of the parallel circuit, the fourth electrode is connected to the output end of the shunt resistor, the fifth electrode is connected to the output end of the to-be-measured resistor, the third electrode is connected to the wire between the fourth electrode and the shunt resistor, and the sixth electrode is connected to the wire between the fifth electrode and the to-be-measured resistor, a test current is provided through the power supply electrode, and the method comprises: a first test current is provided through the power supply electrode; The voltage of the parallel circuit is measured through the measuring electrode, and the method comprises: a first voltage between the shunt resistor is measured through the second electrode and the third electrode; a second voltage between the to-be-measured resistor is measured through the second electrode and the sixth electrode; a third voltage of the first parasitic resistor between the third electrode and the fourth electrode is measured; a fourth voltage of the second parasitic resistor between the fifth electrode and the sixth electrode is measured; According to the results of the voltage measurement, the resistance value of the to-be-measured resistor is calculated, and the method comprises: According to the first test current, the first voltage, the second voltage, the third voltage and the fourth voltage, the resistance value of the to-be-measured resistor is calculated.

9. The method of resistance testing of claim 8, wherein, The test current is provided through the power supply electrode, and the method further comprises: a second test current is provided through the power supply electrode; The voltage of the parallel circuit is measured through the measuring electrode, and the method further comprises: a fifth voltage between the shunt resistor is measured through the second electrode and the third electrode; a sixth voltage of the first parasitic resistor between the third electrode and the fourth electrode is measured; According to the first test current, the first voltage, the second voltage, the third voltage and the fourth voltage, the resistance value of the to-be-measured resistor is calculated, and the method comprises: According to the first test current, the first voltage, the second voltage, the third voltage, the fourth voltage, the second test current, the fifth voltage and the sixth voltage, the resistance value of the to-be-measured resistor is calculated.

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