All-silicon terahertz frequency shift chip based on a resonant ring

Abstract

The present invention discloses an all-silicon terahertz frequency shift chip based on a resonant ring, belonging to the technical field of terahertz on-chip passive devices. The chip has a double-layer structure, and the double-layer structure is composed of two identical all-silicon chips. There is a certain distance between the two all-silicon chips, they are placed parallel to each other and their vertical projections completely coincide. The all-silicon chip is composed of two tapered couplers II and an all-silicon terahertz chip III located in the middle of the two tapered couplers II. The present invention realizes the regulation of energy bands and dispersion by adjusting the layer spacing of the double-layer valley photonic crystal, and further realizes the large-range adjustment of the resonant frequency of the on-chip resonant cavity. The closed topological edge states connected end to end support resonant modes similar to those of the Kerr cavity and are not affected by the turning radius of the traditional Kerr resonant cavity. Benefiting from the continuity of mechanical displacement, the present invention can continuously adjust the resonant frequency without sacrificing the quality factor Q of the resonant cavity, thus expanding the regulation freedom of the existing terahertz on-chip communication devices.

Description

Technical Field

[0001] The present invention belongs to the technical field of terahertz on-chip passive devices, and particularly relates to an all-silicon terahertz frequency shift chip based on a resonant ring. Background Art

[0002] Terahertz waves are electromagnetic waves with frequencies in the range of 0.1 - 10 terahertz (THz) and wavelength ranges of 0.03 - 3 millimeters (mm). Due to their many advantages and unique advantages such as penetrability, low photon energy, high bandwidth, spectral fingerprint characteristics, and ultrafast characteristics, they are of great significance for fields such as material property research, imaging, biomedicine, and astronomy; and the carrier frequency as high as several hundred gigahertz and the continuous bandwidth of dozens of gigahertz endow terahertz waves with great potential for carrying information. Therefore, terahertz communication technology is considered an important solution for high-speed, low-latency, and multi-channel communication in the 6G era.

[0003] The high-speed expansion of semiconductor devices has led to an increase in chip integration density, so there are more demands for bandwidth density between chips and within chips. Low-loss terahertz silicon interconnect chips with larger bandwidths provide solutions for this. The control of optical signals can be achieved by critically coupling to a high-Q resonant cavity to modulate the frequency. The frequency shift of the resonant cavity is usually achieved by heating or changing the pump intensity, but this will cause the quality factor Q of the resonant cavity to vary with frequency, and the adjustment of the frequency is difficult to control. Summary of the Invention

[0004] Aiming at problems such as the difficult control of frequency adjustment in the prior art, the present invention provides an all-silicon terahertz frequency shift chip based on a resonant ring. By adjusting the layer spacing of the double-layer valley photonic crystal, the energy band and dispersion are regulated, and then a large-range adjustment of the resonant frequency of the on-chip resonant cavity is achieved; the closed topological boundary states connected end to end support resonant modes similar to those of a Kerr cavity and are not affected by the turning radius of the traditional Kerr resonant cavity; benefiting from the continuity of mechanical displacement, the present invention can continuously adjust the resonant frequency without sacrificing the quality factor Q of the resonant cavity, thus expanding the control freedom of existing terahertz on-chip communication devices.

[0005] The principle of the present invention is as follows:

[0006] According to the resonant frequency formula, it can be obtained that:

[0007] N·λ r =L·n g

[0008] Where N is a positive integer, λ r is the resonant wavelength, from which the resonant frequency can be correspondingly obtained, L is the side length of the resonant ring, and n g is the equivalent refractive index;

[0009] According to the boundary transmission dispersion mode, it can be obtained that:

[0010]

[0011] Among them, is the reciprocal lattice vector, d is the spacing between two layers of photonic crystals, c is the speed of light, and n0 is the refractive index of air;

[0012] From this, it can be deduced that:

[0013]

[0014] From this, a resonant wavelength λ r can be obtained as a function of the spacing d between two layers of photonic crystals; Benefiting from the continuity of mechanical displacement, the present invention can continuously adjust the resonant frequency without sacrificing the quality factor Q of the resonant cavity.

[0015] The present invention is realized through the following technical solutions:

[0016] The present invention provides an all-silicon terahertz frequency shift chip based on a resonant ring. The chip has a double-layer structure, and the double-layer structure is composed of two identical all-silicon chips. There is a certain spacing between the two all-silicon chips, they are placed parallel to each other and their vertical projections completely overlap; The all-silicon chip is composed of two tapered couplers II 30 and an all-silicon terahertz chip III 40 located in the middle of the two tapered couplers II 30.

[0017] Furthermore, the tapered coupler II 30 includes two tapered pins 1, and the all-silicon terahertz chip III 40 is composed of a Z-shaped transmission boundary 2 and a resonant cavity 3; The two tapered pins 1 are centrosymmetric about the Z-shaped transmission boundary 2 and are connected to both ends of the Z-shaped transmission boundary 2.

[0018] Furthermore, the tapered pin 1 is made of high-resistance silicon with a bottom of 0.6 - 0.8 mm, a height of 5 - 12 mm, and a thickness of 0.2 - 0.6 mm.

[0019] Furthermore, the connection part between the tapered pin 1 and the Z-shaped transmission boundary 2 is an unstructured rectangular area, and the size of this area is (0.43 - 0.823) mm × (2.0 - 3.8) mm.

[0020] Furthermore, the all-silicon terahertz chip III 40 is made of high-resistance silicon with a relative dielectric constant of 11.6 - 12.0, and the overall size is the size of a hexagonal lattice constant of 25 - 40 periods, the lattice constant is 0.5 - 0.95 mm, and the thickness of the all-silicon terahertz chip III 40 is 0.2 - 0.6 mm.

[0021] Furthermore, the spacing between the two all-silicon terahertz chips III 40 is 0.05 - 0.25 mm.

[0022] Further, there are two different specifications of equilateral triangle through-holes on the all-silicon terahertz chip III 40. The through-holes are periodically arranged in a hexagonal honeycomb structure. The sizes of the two equilateral triangle through-holes are such that r1 is 0.10 - 0.29 mm and r2 is 0.10 - 0.29 mm, where r1 and r2 represent the distance from the center of the triangle to the vertex. The size of the equilateral triangle through-hole is proportional to the wavelength of the transmitted electromagnetic wave. The larger the size, the longer the transmitted wavelength, which directly determines the frequency band of the transmitted electromagnetic wave.

[0023] Further, the two through-holes are realized by a high-resistivity silicon wafer through deep silicon technology. The technology of deep reactive ion etching is adopted. Utilizing the anisotropy of silicon, etching is carried out through chemical and physical actions, and a process of alternating etching and passivation is adopted to achieve the protection of the sidewalls.

[0024] Further, the Z-shaped transmission boundary 2 transmits electromagnetic waves between the input and output waveguides connected to the gradient pins 1. There are 25 - 40 periods of hexagonal lattices in the transmission direction, and the size in the vertical direction is 7 - 10 lattice constants. The lattice constant is 0.5 - 0.95 mm, and the angle at the turning sharp corner of the Z-shaped transmission boundary is 60 - 120 degrees.

[0025] Further, the resonant cavity 3 is a closed-loop resonant ring, such as a triangle, a quadrilateral, etc.; the inside and outside of the closed-loop resonant ring are composed of photonic crystals with opposite phases. The side length of the resonant ring is 8 - 18 periods of lattice constants. The opposite phase means that the sizes of the triangle dimensions r1 and r2 are interchanged, that is, the positions and directions of the two triangles remain unchanged, but the sizes are opposite.

[0026] Further, the vertical distance between the bottom edge of the Z-shaped transmission boundary 2 and the resonant cavity 3 is 7 - 10 periods of lattice constants, and the lattice constant is 0.5 - 0.95 mm, which produces the best in-chip coupling effect.

[0027] Compared with the prior art, the advantages of the present invention are as follows:

[0028] 1. Compared with the traditional terahertz resonant cavity, due to the adoption of the design method of topological photonics, the device of the present invention has low backscattering and strong robustness through the valley Hall effect. Furthermore, the Q value of the resonant frequency can reach 2.2 - 2.9×10 3 ;

[0029] 2. The present invention changes the resonant frequency of the device by introducing a mechanical regulation method. Mechanical regulation has high precision and stability. On the one hand, the displacement scale is positively correlated with the resonant frequency shift. A displacement of 50 μm corresponds to a frequency shift of 3 GHz, and as the adjustable precision increases, the control of the resonant frequency will become more and more refined. On the other hand, due to the locking function of the mechanical device, the resonant cavity can be maintained at a fixed resonant frequency for a long time without additional energy consumption;

[0030] 3. The device structure and materials selected in the present invention are fully compatible with the existing CMOS processing technology, enabling direct connection with the industrial community and solving potential process problems for mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn to scale.

[0032] Figure 1 (a) is a schematic diagram of the overall structure of an all-silicon terahertz frequency shift chip device based on a resonant ring according to the present invention;

[0033] Figure 1 (b) is an x-y cross-sectional view of an all-silicon terahertz frequency shift chip device based on a resonant ring according to the present invention;

[0034] In the figure: The all-silicon chip is composed of a tapered coupler II 30 and an all-silicon terahertz chip III 40;

[0035] Figure 1 (c) is an x-z cross-sectional view of the present invention. The tapered coupler II 30 includes two tapered pins 1. The all-silicon terahertz chip III 40 is composed of a Z-shaped transmission boundary 2 and a resonant cavity 3. Among them, the black solid line is the transmission boundary, and the white dashed rectangular frame is the unstructured rectangular area at the connection of the tapered pin 1 and the Z-shaped transmission boundary 2;

[0036] Figure 2 (a) is a partial schematic diagram of the all-silicon terahertz chip III 40 according to the present invention;

[0037] Figure 2 (b) is a three-dimensional quadrilateral unit cell of the all-silicon terahertz chip III 40 according to the present invention;

[0038] Figure 2 (c) is a hexagonal unit cell of the x-z cross-section of the all-silicon terahertz chip III 40 according to the present invention; r1 is 0.163 mm, r2 is 0.271 mm, and the lattice constant a is 0.75 mm;

[0039] Figure 3 (a) shows the energy band diagram of the all-silicon terahertz chip Ⅲ 40 of the present invention when the unit cell parameters are taken as r1 = 0.163 mm, r2 = 0.271 mm, the lattice constant a = 0.75 mm, and the distance between two layers is 0.05 mm. Among them, the gray dashed line represents the air dispersion;

[0040] Figure 3 (b) shows the boundary mode diagram of the all-silicon terahertz chip Ⅲ 40 of the present invention. The upper and lower boundaries are composed of hexagonal unit cells with opposite phases. The lattice constant a = 0.75 mm. The unit cell parameters of the upper layer of the boundary are taken as r1 = 0.163 mm, r2 = 0.271 mm, the unit cell parameters of the lower layer of the boundary are r1 = 0.271 mm, r2 = 0.163 mm, and the distance between two layers of photonic crystals is 0.05 mm;

[0041] Figure 3 (c) shows the boundary mode diagram of the all-silicon terahertz chip Ⅲ 40 of the present invention. The upper and lower boundaries are composed of hexagonal unit cells with opposite phases. The lattice constant a = 0.75 mm. The unit cell parameters of the upper layer of the boundary are taken as r1 = 0.271 mm, r2 = 0.163 mm, the unit cell parameters of the lower layer of the boundary are r1 = 0.163 mm, r2 = 0.271 mm, and the distance between two layers of photonic crystals is 0.05 mm;

[0042] Figure 4 (a) shows the S21 parameter transmission spectrum of an all-silicon terahertz frequency shift chip device based on a resonant ring of the present invention. The five curves respectively represent the transmission characteristics when the distances between two layers of all-silicon photonic crystal chips are 0.05 mm, 0.10 mm, 0.15 mm, 0.20 mm, and 0.25 mm;

[0043] Figure 4 (b) shows the resonance diagram of an all-silicon terahertz frequency shift chip device based on a resonant ring of the present invention. The lattice constant a = 0.75 mm. The unit cell parameters above the zigzag boundary are taken as r1 = 0.163 mm, r2 = 0.271 mm, the unit cell parameters below the zigzag boundary are r1 = 0.271 mm, r2 = 0.163 mm, the unit cell parameters inside the triangular resonant ring are r1 = 0.163 mm, r2 = 0.271 mm, the distance between two layers is 0.05 mm, and it is a schematic diagram of the Hy (A / m) component at a frequency of 116.3 GHz at the center of the y-axis of the photonic crystal in the x-z plane. Among them, the white rectangular frame is the region where resonance occurs;

[0044] Figure 5 (a) shows an all-silicon terahertz frequency shift chip based on a resonant ring of the present invention. The distance between two layers of all-silicon photonic crystal chips is 0.05 mm, and electromagnetic waves are transmitted through the rectangular waveguide port Ⅰ 20;

[0045] Figure 5 (b) is the x - y cross - sectional view of a silicon - based terahertz frequency - shift chip device based on a resonant ring according to the present invention;

[0046] Figure 6 is the S21 parameter transmission spectrum of a silicon - based terahertz frequency - shift chip device based on a resonant ring according to the present invention. The thickness h of a single - layer chip is taken as 0.2 mm, and the distance between two silicon - based photonic crystal chips is 0.05 mm;

[0047] Figure 7 is the schematic diagram of adjusting the distance between the double - layer photonic crystals of a silicon - based terahertz frequency - shift chip device based on a resonant ring according to the present invention. Except for the distance, other parameters remain unchanged; Detailed implementation manners

[0048] To clearly and completely describe the technical solutions and their specific working processes of the present invention, in combination with the accompanying drawings of the specification, the detailed implementation manners of the present invention are as follows:

[0049] Embodiment 1

[0050] As Figure 5 shown in (a) of, a silicon - based terahertz frequency - shift chip based on a resonant ring is coupled to a rectangular waveguide through a tapered silicon material; as Figure 1 shown in (a) of, the double - layer structure is composed of two identical silicon - based chips. There is a certain distance between the two silicon - based chips, they are placed parallel to each other and their vertical projections completely overlap; as Figure 1 shown in (b) of, the silicon - based chip is composed of two tapered couplers II 30 and a silicon - based terahertz chip III 40 located in the middle of the two tapered couplers II 30.

[0051] Specifically, in this embodiment, taking the propagation direction of the wave in the rectangular waveguide as the x - axis, the long - side direction of the rectangular waveguide port as the y - axis, and the short - side direction of the rectangular waveguide port as the z - axis, all devices are arranged in sequence from left to right along the x - axis as follows: rectangular waveguide port I 20, tapered coupler II 30, silicon - based terahertz chip III 40, tapered coupler II 30, rectangular waveguide port I 20; the TE10 - mode electromagnetic wave emitted from the rectangular waveguide port I 20 is transmitted to the silicon - based terahertz chip III 40 through the tapered coupler II 30, and the TE10 electromagnetic wave is received by the rectangular waveguide port I 20 after passing through the tapered coupler II 30.

[0052] As Figure 5As shown in (b), the rectangular waveguide port Ⅰ 20 is composed of a WR-8 waveguide with dimensions of 2.032 (mm) × 1.016 (mm), a frequency ranging from 90 to 140 GHz, an internal dimension of 2.032 mm for the long side in the y-axis direction, an internal dimension of 1.016 mm for the short side in the z-axis direction, a length of 15 mm in the x-axis direction, and a thickness of 0.5 mm for the y-z plane waveguide port; the tapered coupler Ⅱ 30 is composed of high-resistivity silicon with a bottom of 0.8 mm, a height of 5 mm, and a thickness of 0.2 mm, and uses silicon with a relative dielectric constant of 11.7;

[0053] As shown in Figure 1 As shown in (c), the all-silicon terahertz chip Ⅲ 40 is composed of a Z-shaped transmission boundary 2 and a resonant cavity 3; the tapered pin 1 is centrosymmetric about the Z-shaped transmission boundary 2 and is connected to both ends of the Z-shaped transmission boundary 2; the Z-shaped transmission boundary 2 transmits electromagnetic waves between the input and output waveguides connected to the tapered pin 1, has 25 - 40 periods of hexagonal lattice in the transmission direction, a size of 7 - 10 lattice constants in the vertical direction, a lattice constant of 0.5 - 0.95 mm, and an angle of 60 - 120 degrees at the turning sharp corners of the Z-shaped transmission boundary; the resonant cavity 3 is a closed-loop resonant ring, such as a triangle, a quadrilateral, etc.; the inside and outside of the closed-loop resonant ring are composed of photonic crystals with opposite phases, and the side length of the resonant ring is 8 - 18 periods of lattice constants; the vertical distance between the bottom edge of the Z-shaped transmission boundary 2 and the resonant cavity 3 is 7 - 10 periods of lattice constants, with a lattice constant of 0.5 - 0.95 mm, resulting in the best in-chip coupling effect.

[0054] In this embodiment, as shown in Figure 1 As shown in (a), the all-silicon terahertz chip Ⅲ 40 is composed of a honeycomb-structured photonic crystal, has 38 periods of hexagonal unit cells in the x-axis direction, and a lattice constant of 0.75 mm; the thickness of the all-silicon terahertz chip Ⅲ 40 is 0.2 mm; the all-silicon terahertz chip Ⅲ 40 is made of high-resistivity silicon with a relative dielectric constant of 11.6.

[0055] In this embodiment, as shown in Figure 1 As shown in (b), the distance between the two all-silicon chips is 0.05 - 0.25 mm.

[0056] In this embodiment, as shown in Figure 1As shown in (c), two different sizes of equilateral triangle through-holes are provided on the all-silicon terahertz chip III 40. The through-holes are arranged periodically in a hexagonal honeycomb structure. The sizes of the two equilateral triangle through-holes are r1 of 0.10 - 0.29 mm and r2 of 0.10 - 0.29 mm respectively, where r1 and r2 represent the distance from the center of the triangle to the vertex. The two through-holes are realized by a high-resistivity silicon wafer through a deep silicon process, adopting the technology of deep reactive ion etching. Utilizing the anisotropy of silicon, etching is carried out through chemical action and physical action, and an alternating process of etching and passivation is adopted to achieve the protection of the sidewalls.

[0057] by Figure 6 As shown, this example realizes the energy-efficient optical control of 15 dB modulation, and optical switches, narrowband bandpass filters, etc. can be fabricated with this. At the same time, at the frequency corresponding to the lowest amplitude, that is, 112.51 GHz, the quality factor Q value of the resonant cavity of the all-silicon terahertz chip reaches 2.3×10^3, which can be used as a topological laser, and the quality factor Q value will not be reduced due to imperfect processing technology.

[0058] Example 2

[0059] As Figure 7 As shown, this embodiment provides a mechanically tunable all-silicon on-chip frequency-shifted resonant cavity, which is coupled to a rectangular waveguide through a triangular silicon material. The device consists of a tapered coupler II 30 and an all-silicon terahertz chip III 40. The all-silicon terahertz chip III 40 is composed of periodically arranged hexagonal honeycomb structures with opposite phases. At the boundaries, the triangles with larger through-holes are all present. The opposite phase means that the sizes of the triangle dimensions r1 and r2 are interchanged, that is, the positions and directions of the two triangles remain unchanged, but the sizes are opposite.

[0060] The tapered coupler II 30 includes two tapered pins 1 with a bottom of 0.8 mm, a height of 5 mm, a thickness of 0.2 mm, and a relative dielectric constant of 11.7. The all-silicon terahertz chip III 40 consists of a zigzag transmission boundary 2 and a resonant cavity 3, and there are 38 periods of hexagonal unit cells in the x-axis direction, with a lattice constant of 0.75 mm.

[0061] In this example, the spacing of the double-layer photonic crystal is adjusted to 0.05 - 0.25 mm. By calculating the transmission curve S21, it is found that the chip can resonate. The quality factor Q value at the resonant frequency is 2.9×10^3. The relatively high Q value results in smaller losses in the resonant cavity and more concentrated energy distribution. At other frequencies, the electromagnetic wave of the TE10 mode is transmitted along the zigzag domain wall, and the transmission loss is very small, only -2.4 dB.

[0062] It is calculated that when the spacing between two layers of photonic crystals is changed, the bandwidth of the photonic crystal bandgap remains unchanged, but the frequency of the bandgap will shift. When the spacing increases, the bandgap shifts towards the high-frequency band, that is, the frequency band of the transmitted electromagnetic wave turns to a higher frequency band. Therefore, resonance will also occur at a higher frequency. However, when the layer spacing is too large, the chip and the waveguide port cannot be well coupled, resulting in a decrease in transmission efficiency. Therefore, the layer spacing adjustment range of the present invention is controlled within 0.05 mm - 0.25 mm.

[0063] The layer spacing between two layers of photonic crystals is controlled by controlling the displacement stage to adjust the resonance frequency. The layer spacing adjustment range is 0.05 mm - 0.25 mm. Due to the continuity of the mechanical displacement of the displacement stage, the resonance frequency can be continuously adjusted in this embodiment without sacrificing the quality factor Q of the resonant cavity, and it can be used as a frequency-tunable narrowband bandpass filter.

[0064] The preferred embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0065] In addition, it should be noted that, in the above specific embodiments, the various specific technical features described can be combined in any suitable way without conflict. To avoid unnecessary repetition, the present invention will not separately describe various possible combination methods.

[0066] In addition, any combination can be made between different embodiments of the present invention as long as it does not violate the idea of the present invention, and it should also be regarded as the content disclosed by the present invention.

Claims

1. A fully silicon terahertz frequency shift chip based on a resonant ring, characterized in that, The chip is of a double-layer structure, which is composed of two identical all-silicon chips. There is a certain distance between the two all-silicon chips, and they are placed parallel to each other with their vertical projections completely overlapping. The all-silicon chip is composed of two tapered couplers II (30) and an all-silicon terahertz chip III (40) located in the middle of the two tapered couplers II (30). The tapered coupler II (30) includes two tapered pins (1). The all-silicon terahertz chip III (40) is composed of a Z-shaped transmission boundary (2) and a resonant cavity (3). The two tapered pins (1) are centrosymmetric with respect to the Z-shaped transmission boundary (2) and are connected to both ends of the Z-shaped transmission boundary (2).

2. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 1, wherein The tapered pin (1) is made of high-resistance silicon with a bottom of 0.6 - 0.8 mm, a height of 5 - 12 mm, and a thickness of 0.2 - 0.6 mm. The connection between the tapered pin (1) and the Z-shaped transmission boundary (2) is an unstructured rectangular area with dimensions of (0.43 - 0.823) mm × (2.0 - 3.8) mm.

3. A fully silicon terahertz frequency shift chip based on a resonant ring, characterized in that The all-silicon terahertz chip III (40) is made of high-resistance silicon with a relative dielectric constant of 11.6 - 12.

0. The overall size is that of a hexagonal lattice constant of 25 - 40 periods, the lattice constant is 0.5 - 0.95 mm, and the thickness of the all-silicon terahertz chip III (40) is 0.2 - 0.6 mm.

4. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 1, characterized in that, The distance between the two all-silicon terahertz chips III (40) is 0.05 - 0.25 mm.

5. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 1, characterized in that, The all-silicon terahertz chip III (40) is provided with two different specifications of equilateral triangle through-holes, and the through-holes are arranged periodically in a hexagonal honeycomb structure. The sizes of the two equilateral triangle through-holes are r1 of 0.10 - 0.29 mm and r2 of 0.10 - 0.29 mm, where r1 and r2 represent the distance from the center of the triangle to the vertex.

6. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 5, characterized in that The two through-holes are realized by deep silicon process on a high-resistance silicon wafer.

7. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 1, wherein The Z-shaped transmission boundary (2) transmits electromagnetic waves between the input and output waveguides connected to the tapered pins (1). There are 25 - 40 periods of hexagonal lattice in the transmission direction, and the size of 7 - 10 lattice constants in the vertical direction. The lattice constant is 0.5 - 0.95 mm, and the angle at the turning sharp corner of the Z-shaped transmission boundary is 60 - 120 degrees.

8. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 1, characterized in that, The resonant cavity (3) is a closed-ring resonant ring, including a triangle and a quadrilateral. The inside and outside of the closed-ring resonant ring are composed of photonic crystals with opposite phases. The side length of the resonant ring is 8 - 18 periods of lattice constant. The opposite phase means that the sizes of the triangle dimensions r1 and r2 are interchanged, that is, the positions and directions of the two triangles remain unchanged, but the sizes are opposite.

9. The all-silicon terahertz frequency shift chip based on a resonant ring according to claim 1, characterized in that, The vertical distance between the bottom edge of the Z-shaped transmission boundary (2) and the resonant cavity (3) is the size of 7 - 10 periods of lattice constant, and the lattice constant is 0.5 - 0.95 mm.

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