A lithographic method, a lithographic apparatus and a computer storage medium

Abstract

The embodiment of the application discloses a photoetching method, a photoetching device and a computer storage medium. The method comprises the following steps: determining the exposure intensity of a photoetching machine; determining the corresponding target preset interval of the photoetching machine according to the exposure intensity; determining at least one target wafer with the exposure dose meeting a target exposure dose according to the target preset interval; wherein the target preset interval has a corresponding relationship with the target exposure dose; and performing photoetching processing on the at least one target wafer by using the photoetching machine. The application can improve the production capacity of the photoetching machine.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a photolithography method, a photolithography device and a computer storage medium. BACKGROUND

[0002] Generally, the exposure principle of a photolithography machine (Mask Aligner, also known as an exposure machine) is to generate a light beam by a laser, and to form a diffractive optical element (DOE) by reflection and refraction of a mirror to achieve imaging.

[0003] In the use of the photolithography machine, as the light beam of the laser continuously irradiates the mirror in the light path, the mirror will undergo an oxidation reaction to produce fogging, which reduces the reflectivity or refractivity of the mirror, and in turn reduces the exposure intensity ultimately reaching the wafer. As the fogging further deteriorates, the exposure intensity will further decrease. However, if the exposure intensity is too low, the exposure time will increase, which will seriously reduce the output of the photolithography machine and affect the production capacity of the photolithography machine. SUMMARY

[0004] The present application provides a photolithography method, a photolithography device and a computer storage medium, which can improve the production capacity of the exposure machine and save costs.

[0005] The technical solution of the present application is implemented as follows:

[0006] In a first aspect, the embodiments of the present application provide a photolithography method, which comprises:

[0007] determining the exposure intensity of the photolithography machine;

[0008] determining the target preset interval corresponding to the photolithography machine according to the exposure intensity;

[0009] determining at least one target wafer with an exposure dose meeting a target exposure dose according to the target preset interval; wherein the target preset interval and the target exposure dose have a corresponding relationship;

[0010] performing photolithography processing on the at least one target wafer by using the photolithography machine.

[0011] In a second aspect, the embodiments of the present application provide a photolithography device, which comprises a determination unit and a photolithography unit, wherein:

[0012] the determination unit is configured to determine the exposure intensity of the photolithography machine, and to determine the target preset interval corresponding to the photolithography machine according to the exposure intensity, and to determine at least one target wafer with an exposure dose meeting a target exposure dose according to the target preset interval; wherein the target preset interval and the target exposure dose have a corresponding relationship;

[0013] a photolithography unit configured to perform photolithography on the at least one target wafer by using the photolithography machine.

[0014] In a third aspect, the embodiments of the present application further provide a photolithography device, comprising a memory and a processor, wherein,

[0015] the memory is configured to store a computer program capable of running on the processor;

[0016] the processor is configured to execute the photolithography method according to the first aspect when running the computer program.

[0017] In a fourth aspect, the embodiments of the present application provide a computer storage medium, which stores a computer program, and the computer program is executed by at least one processor to implement the photolithography method according to the first aspect.

[0018] The photolithography method, the photolithography device and the computer storage medium provided by the embodiments of the present application can determine the exposure intensity of the photolithography machine, determine the target preset interval corresponding to the photolithography machine according to the exposure intensity, determine at least one target wafer with the exposure dose meeting the target exposure dose according to the target preset interval, and perform photolithography on the at least one target wafer by using the photolithography machine, wherein the target preset interval and the target exposure dose have a corresponding relationship. In this way, by dividing the exposure intensity of the photolithography machine into intervals, the photolithography machine with the exposure intensity belonging to the target preset interval only performs photolithography on the wafer meeting the target exposure dose, so that the photolithography machine can be reasonably utilized, the cost of replacing the lens is reduced, the problem of increasing the exposure time caused by insufficient exposure intensity is avoided, and the production capacity of the photolithography machine is improved. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 a flowchart of a photolithography method provided by the embodiments of the present application;

[0020] Figure 2 a variation diagram of exposure intensity provided by the embodiments of the present application;

[0021] Figure 3 a corresponding relationship diagram between exposure intensity and exposure time provided by the embodiments of the present application;

[0022] Figure 4 another corresponding relationship diagram between exposure intensity and exposure time provided by the embodiments of the present application;

[0023] Figure 5 a detailed flowchart of a photolithography method provided by the embodiments of the present application;

[0024] Figure 6 A flowchart of a random delivery process provided by an embodiment of the present application is shown in FIG. 1.

[0025] Figure 7 A schematic diagram of a component structure of a photolithography device provided by an embodiment of the present application is shown in FIG. 2.

[0026] Figure 8 A schematic diagram of a specific hardware structure of a photolithography device provided by an embodiment of the present application is shown in FIG. 3. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. It can be understood that the specific embodiments described herein are only used to explain the related application, and not to limit the application. In addition, it should be noted that only the parts related to the application are shown in the drawings for the convenience of description.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of the present application only and is not intended to limit the present application.

[0029] In the following description, "some embodiments" are described, which describe a subset of all possible embodiments, but it can be understood that "some embodiments" can be the same subset or different subsets of all possible embodiments, and can be combined with each other without conflict.

[0030] It should be noted that the terms "first", "second", "third" involved in the embodiments of the present application are only to distinguish similar objects, and do not represent a specific order of the objects. It can be understood that "first", "second", "third" can be interchanged in a specific order or sequence as allowed, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0031] The exposure principle of the photolithography machine is to generate a light beam by laser, and to form a DOE by reflection and refraction of the lens to realize imaging. In the use process of the photolithography machine, the exposure intensity for forming the DOE determines the exposure time. If the exposure intensity is too low, the exposure time will increase, which greatly reduces the output of the photolithography machine. With the continuous irradiation of the laser beam on the lens in the light path of the photolithography machine, the lens will undergo oxidation reaction to produce fogging, which will reduce the reflectivity or refractivity of the lens, reduce the exposure intensity reaching the wafer, and with the deterioration of the fogging, the exposure intensity will further show a downward trend.

[0032] Due to the decrease of the exposure intensity, the exposure time is prolonged, which results in the decrease of the number of wafers that can be processed by the lithography machine in the same process time, i.e., the production capacity of the lithography machine is reduced, wherein the production capacity of the lithography machine represents the number of wafers processed by the lithography machine per unit time (e.g., one hour). In addition, in order to restore the production capacity of the lithography machine, the atomized lens needs to be replaced, which results in the increase of the cost. Therefore, the embodiment of the present application provides a lithography method, which relates to the semiconductor lithography exposure technology, can improve the yield loss of the lithography machine, improve the production capacity of the lithography machine, and reduce the cost caused by replacing the lens.

[0033] The embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0034] In an embodiment of the present application, referring to Figure 1 , a flowchart of a lithography method provided by the embodiment of the present application is shown. As shown in Figure 1 , the method can include:

[0035] S101, determining the exposure intensity of the lithography machine.

[0036] It should be noted that the lithography method provided by the embodiment of the present application is applied to a lithography device, such as a lithography machine, or a scheduling device for scheduling the lithography machine, a real-time dispatch system (RTD), etc., and the reasonable use of the lithography machine is realized through the method.

[0037] It can be understood that, with the extension of the use time of the lithography machine, the lens in the light path of the lithography machine will be atomized due to the oxidation reaction, which results in the too low exposure intensity, so that the exposure time when the wafer is processed by lithography will be increased, which affects the production capacity of the lithography machine.

[0038] Exemplarily, referring to Figure 2 , a variation diagram of the exposure intensity provided by the embodiment of the present application is shown, wherein the horizontal direction represents the date, and the vertical direction represents the exposure intensity. As shown in 11 , t 12 , t 13 ……” represent specific time points, and the date gradually increases from left to right, and the vertical direction represents the exposure intensity, and “I 11 , I 12 , I 13 ……” represent specific exposure intensity values, and the exposure intensity gradually increases from bottom to top, and the unit of the exposure intensity can be megawatts per square centimeter (mW / cm 2 ). As shown in Figure 2 , the variation of the exposure intensity of a certain type of lithography machine at several time points.

[0039] From Figure 2It can be seen that, before the time point A, the exposure intensity of the photolithography machine gradually decreases with the extension of the use time; at the A point, the lens is replaced, at this time, due to the replacement of the new lens, the exposure intensity is restored to a higher value.

[0040] Since the excessively low exposure intensity will cause the exposure time to be prolonged, thereby reducing the productivity of the photolithography machine; and when the exposure intensity is excessively low, the lens needs to be replaced, which will also cause the cost to increase. Therefore, the photolithography method provided in the embodiments of the present application combines the current exposure intensity of the photolithography machine to reasonably schedule the photolithography machine and the wafer to be processed, so as to avoid the reduction of the productivity of the photolithography machine due to the reduction of the exposure intensity.

[0041] In some embodiments, determining the exposure intensity of the photolithography machine can include:

[0042] determining a working state parameter of the photolithography machine;

[0043] performing exposure analysis on the working state parameter to determine the exposure intensity of the photolithography machine.

[0044] It should be noted that in the working process of the photolithography machine, the working state parameter of the photolithography machine needs to be adjusted to achieve the best process effect, and the working state parameter of the photolithography machine can include but is not limited to one or more of the following: spot size, wavelength, defocus degree, working space size, grid size, scanning speed and step length, etc.

[0045] In the embodiments of the present application, each working state parameter can be adjusted to a maximum value or an optimal value to determine the exposure intensity that the corresponding photolithography machine can reach, such as testing the exposure intensity of the laser after passing through the lens, so that the exposure intensity of the photolithography machine can be obtained, so that the photolithography machine can be processed according to the exposure intensity in the subsequent step to achieve better photolithography effect.

[0046] S102, determining a target preset interval corresponding to the photolithography machine according to the exposure intensity.

[0047] S103, determining at least one target wafer whose exposure dose meets a target exposure dose according to the target preset interval; wherein the target preset interval and the target exposure dose have a corresponding relationship.

[0048] It should be noted that after the exposure intensity of the photolithography machine is determined, the target preset interval corresponding to the photolithography machine is determined according to the exposure intensity. The target preset interval is determined from a plurality of preset intervals according to the exposure intensity, and each preset interval represents a range of exposure intensity.

[0049] Exemplarily, it is assumed that there are three preset intervals, namely, interval 1: {I | I < I1}, interval 2: {I | I1≤I < I2}, and interval 3: {I | I≥I2}, where I represents the exposure intensity, I1and I2represent different exposure intensities, and the exposure intensity of I1is less than the exposure intensity of I2. If it is determined that the current exposure intensity of the lithography machine, i.e., the exposure intensity I, is between I1and I2, it can be determined that the target preset interval currently corresponding to the lithography machine is interval 2.

[0050] In a specific embodiment, the value of I1may be 3000 mW / cm 2 -6000 mW / cm 2 , for example, 3500 mW / cm 2 , 4000 mW / cm 2 , 4500 mW / cm 2 , 5500 mW / cm 2 , or 5800 mW / cm 2 ; the value of I2may be 6000 mW / cm 2 -8000 mW / cm 2 , for example, 6200 mW / cm 2 , 6500 mW / cm 2 , 6800 mW / cm 2 , 7000 mW / cm 2 , or 7500 mW / cm 2 .

[0051] After determining the target preset interval, at least one target wafer whose exposure dose meets the target exposure dose can be determined based on the correspondence between the target preset interval and the target exposure dose.

[0052] It should be further noted that, in the embodiments of the present application, the target preset interval and the target exposure dose have a correspondence. The correspondence indicates that when the exposure dose required for performing the lithography process on the wafer is the target exposure dose, the change of the exposure intensity in the target preset interval will not cause the change of the exposure time when the wafer is processed based on the exposure intensity in the target preset interval.

[0053] Therefore, the embodiments of the present application determine at least one target wafer whose exposure dose meets the target exposure dose. For these target wafers, since their exposure dose meets the target exposure dose, the exposure time will not be increased when the lithography process is performed on them by using the lithography machine, thereby avoiding the reduction of the production capacity of the lithography machine.

[0054] Further, the target preset interval can be determined from a plurality of preset intervals, and the application embodiments further provide a determination manner of the preset interval. In some embodiments, the method can further include:

[0055] determining a corresponding relationship between the exposure intensity and the exposure time under at least one exposure dose;

[0056] determining a preset interval corresponding to each of the at least one exposure dose respectively according to the corresponding relationship between the exposure intensity and the exposure time under the at least one exposure dose; wherein the preset interval is used to indicate that the exposure time under the exposure dose remains unchanged.

[0057] It should be noted that when performing photolithography on a wafer, the exposure dose required by the wafer is different under different conditions such as different batches and different performance requirements. Therefore, the application embodiments respectively determine the corresponding relationship between the exposure intensity and the exposure time under at least one exposure dose, i.e., under each different exposure dose requirement of the wafer.

[0058] Exemplarily, referring to Figure 3 , a corresponding relationship between the exposure intensity and the exposure time provided by the application embodiments is shown when the exposure dose (Dose) is a first exposure dose Dose1, wherein the horizontal direction represents the date, and "t 21 , t 22 , t 23 …" represent specific time points, and the date gradually increases from left to right; the left vertical direction represents the exposure intensity, and "I 21 , I 22 , I 23 …" represent specific exposure intensity values, and the exposure intensity gradually increases from bottom to top, and the unit of the exposure intensity can be mW / cm 2 , the black broken line represents the change of the exposure intensity; the right vertical direction represents the exposure time, and "T 21 , T 22 , T 23 …" represent specific exposure time values, and the exposure time gradually increases from bottom to top, and the unit of the exposure time can be seconds (S), and the white solid line represents the change of the exposure time.

[0059] As shown in Figure 3 , before the time point B, as the use time length is prolonged, the exposure intensity shows a downward trend, and the exposure time remains unchanged; between the time point B and the time point C, the exposure intensity further decreases, and the exposure time starts to increase; at the time point C, the lens is replaced, the exposure intensity returns to a higher value, and the exposure time returns to a smaller value.

[0060] That is, in the Figure 3In the example shown, when the exposure dose is the first exposure dose Dose1, as long as the exposure intensity can be maintained greater than the exposure intensity I2 corresponding to point B, the exposure time will not increase, and the yield of the photolithography machine will not be affected. That is, when the exposure dose is the first exposure dose Dose1, the preset interval corresponding thereto is: {I | I≥I2}.

[0061] In this way, by the corresponding relationship between the exposure intensity and the exposure time under different exposure doses, the preset interval corresponding to each exposure dose is determined. As long as the exposure intensity of the photolithography machine meets the preset interval corresponding to the exposure dose required by the wafer, the exposure time will not increase when the wafer is processed by the photolithography machine, and the yield of the photolithography machine will not be affected.

[0062] In some embodiments, the at least one exposure dose at least includes a first exposure dose and a second exposure dose; and the preset interval corresponding to each of the at least one exposure dose is determined according to the corresponding relationship between the exposure intensity and the exposure time under the at least one exposure dose, which can include:

[0063] determining a first preset interval corresponding to the first exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the first exposure dose; and

[0064] determining a second preset interval corresponding to the second exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose.

[0065] It should be noted that the at least one exposure dose can at least include a first exposure dose and a second exposure dose. For the first exposure dose, the first preset interval corresponding thereto can be determined according to the corresponding relationship between the exposure intensity and the exposure time under the first exposure dose. For the second exposure dose, the second preset interval corresponding thereto can be determined according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose.

[0066] In some embodiments, the second preset interval corresponding to the second exposure dose can be determined according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose, which can include:

[0067] determining a third preset interval corresponding to the second exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose;

[0068] determining the second preset interval corresponding to the second exposure dose according to the third preset interval and the first preset interval.

[0069] It should be noted that, for the second exposure dose, when determining the second preset interval corresponding thereto, first, according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose, the third preset interval corresponding to the second exposure dose is determined, and then the second preset interval corresponding to the second exposure dose is determined according to the third preset interval and the first preset interval.

[0070] In a specific embodiment, the value of the first exposure dose Dose1 can be 30-120 mj / cm 2 ·s, for example, can be 40 mj / cm 2 ·s, 50 mj / cm 2 ·s, 65 mj / cm 2 ·s, 80 mj / cm 2 ·s, or 100 mj / cm 2 ·s; the value of the second exposure dose Dose2 can be 20-110 mj / cm 2 ·s, for example, can be 30 mj / cm 2 ·s, 46 mj / cm 2 ·s, 60 mj / cm 2 ·s, 70 mj / cm 2 ·s, or 90 mj / cm 2 ·s.

[0071] The manner of determining the second preset interval will be described below in combination with a specific embodiment:

[0072] Exemplarily, refer to Figure 4 , which shows another corresponding relationship between the exposure intensity and the exposure time provided by the embodiment of the present application when the exposure dose is the first exposure dose Dose1 and the second exposure dose Dose2 respectively, wherein the exposure dose of the first exposure dose Dose1 is greater than the exposure dose of the second exposure dose Dose2. In Figure 4 , the horizontal direction represents the date, and “t 31 , t 32 , t 33 …” represents specific time points, and the date gradually increases from left to right; the left vertical direction represents the exposure intensity, and “I 31 , I 32 , I 33 …” represents specific exposure intensity values, and the exposure intensity gradually increases from bottom to top, and the unit of the exposure intensity can be mW / cm 2 , and the black broken line represents the change of the exposure intensity; the right vertical direction represents the exposure time, and “T 31 , T 32 , T 33The "…" indicates a specific exposure time value, and from bottom to top, the exposure time gradually increases. The unit of the exposure time can be S. The white solid line indicates the change of the exposure time with time (denoted as exposure time 1) when the exposure dose is the first exposure dose Dose1. The oblique line pattern filled line indicates the change of the exposure time with time (denoted as exposure time 2) when the exposure dose is the second exposure dose Dose2.

[0073] As shown in FIG. 6, before the time point D, as the use time is prolonged, the exposure intensity shows a decreasing trend, and the exposure time 1 and the exposure time 2 remain unchanged. Between the time point D and the time point E, as the exposure intensity further decreases, the exposure time 1 starts to increase, and the exposure time 2 still remains unchanged. Between the time point E and the time point F, the exposure time 1 and the exposure time 2 both increase. After the time point F, due to the replacement of the lens, the exposure intensity returns to a higher value, and the exposure time 1 and the exposure time 2 also return to lower values. Figure 4 That is, in the example shown in FIG. 6, for the first exposure dose Dose1, as long as the exposure intensity can be maintained to be greater than the exposure intensity I2 corresponding to the D point, the exposure time will not increase, that is, the first preset interval corresponding to the first exposure dose Dose1 is: {I | I≥I2}. For the second exposure dose Dose2, as long as the exposure intensity can be maintained to be greater than the exposure intensity I1 corresponding to the E point, the exposure time will not increase, that is, the third preset interval corresponding to the second exposure dose Dose2 is: {I | I≥I1}.

[0074] Figure 4 Thus, for the first exposure dose Dose1 and the second exposure dose Dose2, the exposure intensity interval (that is, the third preset interval) in which the exposure time corresponding to the second exposure dose Dose2 remains unchanged contains the first preset interval. If the third preset interval is taken as the preset interval corresponding to the second exposure dose Dose2, when the exposure intensity of the machine is greater than the exposure intensity I2, the exposure intensity will simultaneously meet the two preset intervals. By comparison, determining the first preset interval as the target preset interval can exert greater efficiency of the lithography machine, and will not cause energy waste. If the third preset interval is determined as the target preset interval, energy waste will be caused. That is, when the exposure intensity can simultaneously meet the requirements of multiple exposure doses to ensure that the exposure time remains unchanged, the exposure dose with a higher required exposure intensity is preferentially selected, so that more efficient use of energy is realized, and energy waste is avoided.

[0075] Therefore, when the second preset interval corresponding to the second exposure dose is determined, the intersection part of the third preset interval and the first preset interval is deleted, and the part of the third preset interval that does not include the second preset interval is taken as the second preset interval, that is, for the second exposure dose Dose2, the second preset interval is: {I | I1

[0076] Therefore, when the second exposure dose corresponding to the second preset interval is determined, the intersection part of the third preset interval and the first preset interval is deleted, and the part of the third preset interval that does not include the second preset interval is taken as the second preset interval, that is, for the second exposure dose Dose2, the second preset interval is: {I | I1​Figure 4 In the illustrated example, the second preset interval corresponding to the second exposure record is {I | I1≤I≤I2}.

[0077] That is, in the embodiments of the present application, when determining the preset interval corresponding to each exposure dose, if the initial interval (for example, the third preset interval described above) maintaining the exposure time corresponding to a certain exposure dose (for example, the second exposure dose described above) contains the preset interval (for example, the first preset interval described above) corresponding to another exposure dose (for example, the first exposure dose described above), the preset interval corresponding to the other exposure dose is deleted from the initial interval to obtain the corresponding preset interval. Not only can the photolithography machine be reasonably utilized, but also the waste of resources caused by assigning the photolithography machine with a higher exposure intensity to a wafer with a low exposure dose when two intervals contain an overlapping part can be avoided.

[0078] In some embodiments, when the exposure intensity is in the first preset interval, the target preset interval can be determined as the first preset interval. Accordingly, determining at least one target wafer with an exposure dose meeting a target exposure dose according to the target preset interval can include:

[0079] obtaining the exposure dose of the wafer to be processed;

[0080] When the exposure dose of the wafer to be processed meets the first exposure dose, the wafer to be processed is determined as the target wafer.

[0081] It should be noted that when the determined exposure intensity is in the first preset interval, the target preset interval is determined as the first preset interval. The exposure dose corresponding to the first preset interval is the first exposure dose, at this time, the wafer to be processed with an exposure dose meeting the first exposure dose is determined as the target wafer.

[0082] In some embodiments, when the exposure intensity is in the second preset interval, the target preset interval can be determined as the second preset interval. Accordingly, determining at least one target wafer with an exposure dose meeting a target exposure dose according to the target preset interval can include:

[0083] obtaining the exposure dose of the wafer to be processed;

[0084] When the exposure dose of the wafer to be processed meets the second exposure dose, the wafer to be processed is determined as the target wafer.

[0085] It should be noted that when the determined exposure intensity is in the second preset interval, the target preset interval is determined as the second preset interval. The exposure dose corresponding to the second preset interval is the second exposure dose, at this time, the wafer to be processed with an exposure dose meeting the second exposure dose is determined as the target wafer.

[0086] That is, after obtaining the exposure dose of the wafer to be processed, if the preset interval corresponding to the exposure dose of the wafer to be processed is the same as the preset interval corresponding to the exposure intensity of the photolithography machine, the photolithography machine only performs photolithography processing on the wafer corresponding to the exposure dose, so that the photolithography machine can be reasonably utilized.

[0087] After the exposure intensity of the photolithography machine is determined, it can be determined whether to replace the lens according to the size of the exposure intensity. Therefore, in some embodiments, the method can further include:

[0088] When the exposure intensity is less than the preset lower limit value, output warning information; wherein the warning information is used to prompt to replace the lens of the photolithography machine;

[0089] When the exposure intensity is greater than or equal to the preset lower limit value, perform the step of determining the target preset interval corresponding to the photolithography machine according to the exposure intensity.

[0090] It should be noted that, in order to improve the production capacity of the photolithography machine and save costs, if the exposure intensity is less than the preset lower limit value, the lens of the photolithography machine needs to be replaced. The preset lower limit value represents an exposure intensity value verified by experiment or determined by other means. When the exposure intensity is lower than the preset lower limit value, it is insufficient to maintain the production capacity of the photolithography machine by continuing to use the fogged lens. At this time, warning information is output to remind the technician to replace the lens of the photolithography machine.

[0091] That is, if the exposure intensity is too low, the embodiments of the present application can also replace the lens in time in the case of too low exposure intensity, so as to avoid reducing the production capacity of the photolithography machine.

[0092] If the exposure intensity is greater than or equal to the preset lower limit value, the target preset interval corresponding to the photolithography machine is determined according to the exposure intensity, and the subsequent steps are performed.

[0093] It should be further noted that when the preset interval includes the first preset interval and the second preset interval, the preset lower limit value can be the same as the lower limit value of the second preset interval (or the third preset interval).

[0094] Therefore, in some embodiments, after determining the exposure intensity of the photolithography machine, the method can further include:

[0095] When the exposure intensity is less than the preset lower limit value of the third preset interval, output warning information; wherein the warning information is used to prompt to replace the lens of the photolithography machine;

[0096] When the exposure intensity is greater than or equal to the preset lower limit value of the third preset interval, perform the step of determining the target preset interval corresponding to the photolithography machine according to the exposure intensity.

[0097] It should be noted that, still taking Figure 4For example, the first preset interval corresponding to the first exposure dose is {I | I≥I2}; the second preset interval corresponding to the second exposure dose is {I | I1≤I≤I2}; and the third preset interval corresponding to the second exposure dose is {I | I≥I1}. The preset lower limit value of the third preset interval (or the second preset interval) is I1. That is, in this example, if the exposure intensity is less than I1, the warning information for prompting to replace the lens is output.

[0098] In addition, when determining the preset interval, the preset warning interval {I | I

[0099] For Figure 4 If the photolithography method of the embodiment is not performed, for the wafer with the first exposure dose, when the exposure intensity is less than I2, the exposure time will be increased. At this time, the lens with fogging is used for photolithography processing, but the production capacity of the photolithography machine is reduced due to the increase of the exposure time. Alternatively, the lens is replaced, which increases the cost of replacing the lens. According to the photolithography method provided by the embodiment, if the exposure intensity is less than I2 and greater than I1, the wafer with the second exposure dose is dispatched to the photolithography machine for processing, because the exposure time of the wafer with the second exposure dose will not be increased when the exposure intensity is greater than I1. At this time, although the exposure intensity is insufficient, the photolithography processing of the wafer with the second exposure dose can still be met, the production capacity of the photolithography machine is maintained, and the lens does not need to be replaced, thereby saving the cost of replacing the lens.

[0100] S104, performing photolithography processing on the at least one target wafer by using the photolithography machine.

[0101] It should be noted that after the at least one target wafer is determined, the photolithography processing is performed on the determined target wafer by using the photolithography machine.

[0102] In some embodiments, the method can further include:

[0103] determining the exposure dose of the wafer to be processed in the current batch;

[0104] when the exposure dose meets the target exposure dose, determining a target preset interval corresponding to the target exposure dose;

[0105] determining the photolithography machine whose exposure intensity is in the target preset interval according to the target preset interval;

[0106] scheduling the wafer to be processed in the current batch to the photolithography machine and performing photolithography processing.

[0107] It should be noted that the embodiment of the present application can also determine the exposure dose of the current batch of wafers to be processed, and determine the target exposure dose satisfied by the exposure dose of the wafer to be processed. Wherein, the target exposure dose is determined from a plurality of preset exposure doses according to the exposure dose of the wafer to be processed, for example: the plurality of preset exposure doses include the first exposure dose and the second exposure dose, when the exposure dose of the wafer to be processed meets the first exposure dose, the first exposure dose is determined as the target exposure dose.

[0108] According to the target exposure dose, the corresponding target preset interval can be determined, that is, the exposure intensity interval in which the exposure time does not change under the target exposure dose, and then the photolithography machine whose exposure intensity is in the target preset interval is determined, so that the current batch of wafers to be processed is processed by the photolithography machine, thereby improving the production capacity of the photolithography machine.

[0109] Exemplarily, the first photolithography machine corresponds to the first preset interval, and the second photolithography machine corresponds to the second preset interval; the target preset interval is the first preset interval, the corresponding photolithography machine is determined as the first photolithography machine, and the current batch of wafers to be processed is dispatched to the first photolithography machine for photolithography processing.

[0110] The embodiment provides a photolithography method, by determining the exposure intensity of the photolithography machine; according to the exposure intensity, determining the target preset interval corresponding to the photolithography machine; according to the target preset interval, determining at least one target wafer whose exposure dose meets the target exposure dose; wherein, the target preset interval and the target exposure dose have a corresponding relationship; using the photolithography machine to perform photolithography processing on the at least one target wafer. In this way, by dividing the exposure intensity of the photolithography machine into intervals, the photolithography machine whose exposure intensity belongs to the target preset interval only performs photolithography processing on the wafer that meets the target exposure dose, thereby realizing the reasonable use of the photolithography machine, not only reducing the cost of replacing the lens, but also avoiding the problem of increasing the exposure time when the exposure intensity is insufficient, and improving the production capacity of the photolithography machine.

[0111] In another embodiment of the present application, see Figure 5 , which shows a detailed flowchart of a photolithography method provided by the embodiment of the present application. As shown in Figure 5 , the detailed flowchart can include:

[0112] S501, exposure intensity measurement.

[0113] It should be noted that the exposure intensity of the photolithography machine is measured as an example of the photolithography machine corresponding to the foregoing Figure 4 .

[0114] S502, the system captures and records exposure data.

[0115] It should be noted that in the use of the lithography machine, the system for performing the method flow can capture the exposure data corresponding to different exposure doses applied by the lithography machine at different times, mainly including exposure intensity and exposure time, and the recorded results can be referred to as Figure 4 .

[0116] S503, judge the exposure data.

[0117] It should be noted that the exposure data is analyzed to divide the exposure intensity into intervals. The exposure intensity can be divided into three preset intervals, which are: the first preset interval greater than or equal to I2, corresponding to the first exposure dose Dose1, which is relatively high and also recorded as a high exposure dose, and the lithography machine with an exposure intensity greater than I2 is a high-quality tool; the second preset interval between I1 and I2, corresponding to the second exposure dose Dose2, which is relatively low and also recorded as a low exposure dose, and the lithography machine with an exposure intensity between I1 and I2 is a low-quality tool; the preset warning interval less than I1, in which range the lens needs to be replaced.

[0118] S504, database analysis.

[0119] It should be noted that in actual production, the system first judges the tool state of the lithography machine, determines the exposure intensity of the lithography machine, and performs database (the database saves the corresponding relationship of exposure dose, preset interval, and exposure time) analysis to determine the exposure dose that the current lithography machine can meet, and feedback data to the real-time dispatch system RTD.

[0120] S505, RTD distribution job control.

[0121] It should be noted that the RTD performs real-time dispatching, distribution job and control according to the feedback data. If the lithography machine is determined to be a high-quality tool according to the exposure intensity, the wafer to be processed with high exposure dose (such as the first exposure dose) requirement is dispatched to the lithography machine for processing; if the lithography machine is determined to be a low-quality tool according to the exposure intensity, the wafer to be processed with low exposure dose (such as the second exposure dose) requirement is dispatched to the lithography machine for processing.

[0122] In the embodiment of the application, by systematically studying the changes of exposure intensity and exposure time of the lithography machine with a large amount of data, the corresponding relationship between the exposure intensity and the exposure time is obtained as follows:

[0123] For the first exposure dose Dose1, when the exposure intensity is greater than I2, the exposure time will not change; when the exposure dose is less than I2, the exposure time will gradually increase as the exposure intensity decreases, that is, it will affect the production capacity of the lithography machine.

[0124] For the second exposure dose Dose2, when the exposure intensity is greater than I1, the exposure time will not change; when the exposure dose is less than I1, the exposure time will gradually increase as the exposure intensity decreases, that is, the photolithography machine production capacity will be affected.

[0125] By Figure 4 It can be obtained that when the high exposure dose requirement is required, the exposure intensity greater than I2 will not affect the photolithography machine production capacity, and when the low exposure dose requirement is required, the exposure intensity greater than I1 will not affect the photolithography machine production capacity. By recording the exposure intensity performance of different photolithography machines, high-quality tools (high-quality tool group) and low-quality tools (low-quality tool group) are classified, and wafers with high exposure dose requirements can be dispatched to the high-quality tool group in the RTD dispatch.

[0126] That is, the embodiment provides a photolithography method, and the specific implementation of the foregoing embodiment is described in detail in the foregoing embodiment. As can be seen from the foregoing embodiment, the photolithography method provided by the embodiment can not affect the photolithography machine production capacity, and can reduce the cost caused by replacing the lens and prolong the service life of the lens compared with the random dispatching (see Figure 6 The embodiment provides a flowchart of a random dispatching, that is, the wafers are randomly dispatched without distinguishing the exposure intensity and the exposure requirement, and the wafers can be dispatched to the high-quality tool or the low-quality tool.

[0127] In another embodiment of the present application, see Figure 7 The embodiment shows a component structure diagram of a photolithography device 70 provided by the embodiment of the present application. As Figure 7 The photolithography device includes a determination unit 701 and a photolithography unit 702, wherein

[0128] The determination unit 701 is configured to determine the exposure intensity of the photolithography machine, and determine the target preset interval corresponding to the photolithography machine according to the exposure intensity, and determine at least one target wafer with the exposure dose meeting the target exposure dose according to the target preset interval; wherein the target preset interval and the target exposure dose have a corresponding relationship;

[0129] The photolithography unit 702 is configured to perform photolithography processing on the at least one target wafer by using the photolithography machine.

[0130] In some embodiments, the determination unit 701 is specifically configured to determine the working state parameter of the photolithography machine, and perform exposure analysis on the working state parameter to determine the exposure intensity of the photolithography machine.

[0131] In some embodiments, the determining unit 701 is further configured to determine a correspondence between the exposure intensity and the exposure time under at least one exposure dose; and determine a preset interval corresponding to each of the at least one exposure dose according to the correspondence between the exposure intensity and the exposure time under the at least one exposure dose, wherein the preset interval is used to indicate that the exposure time under the exposure dose remains unchanged.

[0132] In some embodiments, the at least one exposure dose comprises at least a first exposure dose and a second exposure dose; the determining unit 701 is further specifically configured to determine a first preset interval corresponding to the first exposure dose according to the correspondence between the exposure intensity and the exposure time under the first exposure dose; and determine a second preset interval corresponding to the second exposure dose according to the correspondence between the exposure intensity and the exposure time under the second exposure dose.

[0133] In some embodiments, the determining unit 701 is further specifically configured to determine a third preset interval corresponding to the second exposure dose according to the correspondence between the exposure intensity and the exposure time under the second exposure dose; and determine the second preset interval corresponding to the second exposure dose according to the third preset interval and the first preset interval.

[0134] In some embodiments, the determining unit 701 is further specifically configured to determine the target preset interval as the first preset interval when the exposure intensity is in the first preset interval; and obtain the exposure dose of the wafer to be processed; and determine the wafer to be processed as the target wafer when the exposure dose of the wafer to be processed meets the first exposure dose.

[0135] In some embodiments, the determining unit 701 is further specifically configured to determine the target preset interval as the second preset interval when the exposure intensity is in the second preset interval; and obtain the exposure dose of the wafer to be processed; and determine the wafer to be processed as the target wafer when the exposure dose of the wafer to be processed meets the second exposure dose.

[0136] In some embodiments, the determining unit 701 is further configured to output a warning information when the exposure intensity is less than a preset lower limit value of the third preset interval, wherein the warning information is used to prompt to replace the lens of the lithography machine; and perform the step of determining the target preset interval corresponding to the lithography machine according to the exposure intensity when the exposure intensity is greater than or equal to the preset lower limit value of the third preset interval.

[0137] In some embodiments, the determining unit 701 is further configured to determine the exposure dose of the wafer to be processed in the current batch; and determine a target preset interval corresponding to a target exposure dose when the exposure dose meets the target exposure dose; and determine the lithography machine whose exposure intensity is in the target preset interval according to the target preset interval.

[0138] The photoetching unit 702 is also configured to dispatch the current batch of wafers to be processed to a photoetching machine and perform photoetching processing.

[0139] It should be noted that the photoetching device provided by the embodiments of the present application and the photoetching method provided by the foregoing embodiments belong to the same inventive concept, and the specific description is similar, and has similar beneficial effects to the method embodiments. For technical details not disclosed in the photoetching device embodiments of the present application, please refer to the description of the photoetching method embodiments for understanding.

[0140] It can be understood that in the embodiments, the "unit" can be a part of circuit, a part of processor, a part of program or software, etc., and of course can also be a module, and can also be non-modular. Moreover, the components in the embodiments can be integrated in one processing unit, or can be physically present separately, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of a software function module.

[0141] When the integrated unit is realized in the form of a software function module and is not sold or used as an independent product, it can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the embodiments can be embodied in the form of a software product, and the computer software product is stored in a storage medium, and includes a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to perform all or part of the steps of the method described in the embodiments. The foregoing storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various media that can store program codes.

[0142] Therefore, the embodiments provide a computer storage medium, which stores a computer program. When the computer program is executed by at least one processor, the photoetching method described in any one of the foregoing embodiments is implemented.

[0143] Based on the foregoing composition of the photoetching device 70 and the computer storage medium, refer to Figure 8 which shows a specific hardware structure schematic diagram of the photoetching device 70 provided by the embodiments of the present application. As shown in Figure 8As shown, the apparatus can include a communication interface 801, a memory 802 and a processor 803; each component is coupled together through a bus system 804. It can be understood that the bus system 804 is used to realize the connection communication between the components. In addition to including a data bus, the bus system 804 also includes a power bus, a control bus and a status signal bus. However, in order to clearly illustrate, all kinds of buses are marked as the bus system 804 in the Figure 8 The communication interface 801 is used for receiving and sending signals in the process of transmitting information with other external network elements;

[0144] The memory 802 is used for storing computer programs capable of running on the processor 803;

[0145] The processor 803 is used for executing the following steps when running the computer programs:

[0146] Determining the exposure intensity of the lithography machine;

[0147] According to the exposure intensity, determining the target preset interval corresponding to the lithography machine;

[0148] According to the target preset interval, determining at least one target wafer whose exposure dose meets the target exposure dose; wherein the target preset interval and the target exposure dose have a corresponding relationship;

[0149] Using the lithography machine to perform lithography processing on the at least one target wafer.

[0150] It is to be understood that the memory 802 in embodiments of the present application can be volatile or nonvolatile memory, or can include both volatile and nonvolatile memory. In one embodiment, nonvolatile memory can be read-only memory (ROM), programmable ROM (PROM), erasable PROM (EPROM), electrically EPROM (EEPROM), or flash memory. Volatile memory can be random access memory (RAM), used as external cache memory. By way of example, and not limitation, many forms of RAM are available, for example, static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double-data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), SynchBurst DRAM (SLDRAM), and direct Rambus RAM (DRRAM). Memory 802 of the system and method described herein are intended to include, without being limited to, these and any other suitable types of memory.

[0151] The processor 803 can be an integrated circuit chip including a processing unit that is configured to process signals. In implementation, the steps of the above-described method can be completed by the integrated logic circuit of the processor 803 or the instructions in the form of software. The processor 803 described above can be a general-purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application can be implemented or executed by the processor 803. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor. The steps of the methods disclosed in conjunction with the embodiments of the present application can be directly embodied as hardware code of the processor or a combination of hardware and software modules in the processor. The software module can reside in the storage media of the memory 802, the flash memory, the read-only memory (ROM), the programmable read-only memory (PROM), the electrically programmable read-only memory (EPROM), the electrically erasable programmable read-only memory (EEPROM), the register, or other forms of the storage media in the art. The storage media is located in the memory 502, and the processor 503 reads information in the memory 802 and combines the hardware to complete the steps of the above-described method.

[0152] It can be understood that the embodiments described herein can be implemented in hardware, software, firmware, middleware, microcode, or a combination thereof. For hardware implementation, the processing units can be implemented within one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSP Devices), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, micro-controllers, microprocessors, other electronic units designed to perform the functions described herein, or a combination thereof.

[0153] For software implementation, the techniques described herein can be implemented with modules (e.g., procedures, functions, and so on) that perform the functions described herein. The software codes can be stored in the memory and executed by the processor. The memory can be implemented within the processor or external to the processor.

[0154] Optionally, as another embodiment, the processor 803 is further configured to execute the lithography method of any one of the preceding embodiments when running the computer program.

[0155] For the photolithography device 70, since the exposure intensity of the photolithography machine is divided into intervals, the photolithography machine whose exposure intensity belongs to the target preset interval only performs photolithography processing on the wafer that meets the target exposure dose, so that the photolithography machine can be reasonably utilized, the cost of replacing the lens is reduced, the problem of increasing the exposure time caused by insufficient exposure intensity is avoided, and the production capacity of the photolithography machine is improved.

[0156] The above merely describes preferred embodiments of the present application, but is not intended to limit the protection scope of the present application.

[0157] It should be noted that in the present application, the terms "comprising", "containing" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0158] The above-mentioned sequence numbers of the embodiments of the present application are only for description, and do not represent the advantages and disadvantages of the embodiments.

[0159] The methods disclosed in the several method embodiments provided by the present application can be combined arbitrarily without conflict to obtain new method embodiments.

[0160] The features disclosed in the several product embodiments provided by the present application can be combined arbitrarily without conflict to obtain new product embodiments.

[0161] The features disclosed in the several method or device embodiments provided by the present application can be combined arbitrarily without conflict to obtain new method or device embodiments.

[0162] The above merely describes specific embodiments of the present application, but the protection scope of the present application is not limited thereto, and any skilled person in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A photolithography method, characterized in that, the method comprises: determining an exposure intensity of a photolithography machine; determining a target preset interval corresponding to the photolithography machine according to the exposure intensity; determining at least one target wafer with an exposure dose conforming to a target exposure dose according to the target preset interval; wherein the target preset interval and the target exposure dose have a corresponding relationship; and performing photolithography processing on the at least one target wafer by using the photolithography machine; determining a corresponding relationship between the exposure intensity and the exposure time under at least one exposure dose; and determining a preset interval corresponding to each of the at least one exposure dose respectively according to the corresponding relationship between the exposure intensity and the exposure time under the at least one exposure dose; wherein the preset interval is used to indicate that the exposure time under the exposure dose remains unchanged. wherein the target preset interval is determined from a plurality of target preset intervals according to the exposure intensity, and each target preset interval represents a range of the exposure intensity; the corresponding relationship indicates that when the exposure dose required for performing photolithography processing on the target wafer is the target exposure dose, a change in the exposure intensity within the target preset interval will not cause a change in the exposure time when the wafer is processed based on the exposure intensity within the target preset interval.

2. The method of claim 1, characterized in that, the determination of the exposure intensity of the photolithography machine comprises: determining a working state parameter of the photolithography machine; and performing exposure analysis on the working state parameter to determine the exposure intensity of the photolithography machine.

3. The method of claim 1, characterized in that, the at least one exposure dose at least comprises a first exposure dose and a second exposure dose; and the determination of the preset interval corresponding to each of the at least one exposure dose respectively according to the corresponding relationship between the exposure intensity and the exposure time under the at least one exposure dose comprises: determining a first preset interval corresponding to the first exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the first exposure dose; and determining a second preset interval corresponding to the second exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose.

4. The method of claim 3, characterized in that, the determination of the second preset interval corresponding to the second exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose comprises: determining a third preset interval corresponding to the second exposure dose according to the corresponding relationship between the exposure intensity and the exposure time under the second exposure dose; and determining the second preset interval corresponding to the second exposure dose according to the third preset interval and the first preset interval.

5. The method of claim 3, characterized in that, The method according to any one of claims 1 to 7, further comprising: determining an exposure dose of a current batch of wafers to be processed; when the exposure dose meets the target exposure dose, determining a target preset interval corresponding to the target exposure dose; determining a lithography machine in which an exposure intensity is in the target preset interval according to the target preset interval; and scheduling the current batch of wafers to be processed to the lithography machine for lithography processing.

6. The method of claim 3, wherein, The method according to any one of claims 1 to 7, further comprising: when the exposure intensity is in the second preset interval, determining that the target preset interval is the second preset interval; and correspondingly, the step of determining at least one target wafer in which an exposure dose meets a target exposure dose according to the target preset interval comprises: acquiring the exposure dose of a wafer to be processed; and when the exposure dose of the wafer to be processed meets the second exposure dose, determining the wafer to be processed as the target wafer.

7. The method of claim 4, wherein, After the step of determining the exposure intensity of the lithography machine, the method further comprises: when the exposure intensity is less than a preset lower limit value of the third preset interval, outputting warning information; wherein the warning information is used to prompt replacement of a lens of the lithography machine; and when the exposure intensity is greater than or equal to the preset lower limit value of the third preset interval, performing the step of determining the target preset interval corresponding to the lithography machine according to the exposure intensity.

8. The method of claim 1 to 7, wherein, The method further comprises: determining an exposure dose of a current batch of wafers to be processed; when the exposure dose meets the target exposure dose, determining a target preset interval corresponding to the target exposure dose; determining a lithography machine in which an exposure intensity is in the target preset interval according to the target preset interval; and scheduling the current batch of wafers to be processed to the lithography machine for lithography processing.

9. A lithography device, comprising: a determination unit configured to determine an exposure intensity of a lithography machine; and determine a target preset interval corresponding to the lithography machine according to the exposure intensity; and determine at least one target wafer in which an exposure dose meets a target exposure dose according to the target preset interval; wherein the target preset interval has a corresponding relationship with the target exposure dose; and a lithography unit configured to perform lithography processing on the at least one target wafer by using the lithography machine; The determination unit is further configured to determine a corresponding relationship between the exposure intensity and the exposure time under at least one exposure dose; and determine a preset interval corresponding to each of the at least one exposure dose respectively according to the corresponding relationship between the exposure intensity and the exposure time under the at least one exposure dose; wherein the preset interval is used to indicate that the exposure time under the exposure dose remains unchanged. ​ The target preset interval is determined according to the exposure intensity from a plurality of target preset intervals, and each target preset interval represents a range of the exposure intensity. The corresponding relationship indicates that when the exposure dose required for performing photolithography on the target wafer is a target exposure dose, a change in the exposure intensity within the target preset interval does not cause a change in the exposure time when the wafer is processed based on the exposure intensity within the target preset interval.

10. The photolithography device of claim 9, wherein The determination unit is specifically configured to determine a working state parameter of the photolithography machine, and perform exposure analysis on the working state parameter to determine the exposure intensity of the photolithography machine.

11. The photolithography device of claim 9, wherein The at least one exposure dose at least includes a first exposure dose and a second exposure dose; and the determination unit is further specifically configured to determine a first preset interval corresponding to the first exposure dose according to a corresponding relationship between the exposure intensity and the exposure time under the first exposure dose, and determine a second preset interval corresponding to the second exposure dose according to a corresponding relationship between the exposure intensity and the exposure time under the second exposure dose.

12. The photolithography device of claim 11, wherein The determination unit is further specifically configured to determine a third preset interval corresponding to the second exposure dose according to a corresponding relationship between the exposure intensity and the exposure time under the second exposure dose, and determine the second preset interval corresponding to the second exposure dose according to the third preset interval and the first preset interval.

13. The photolithography device of claim 11, wherein The determination unit is further specifically configured to determine the target preset interval as the first preset interval when the exposure intensity is in the first preset interval, and acquire an exposure dose of a wafer to be processed; and determine the wafer to be processed as the target wafer when the exposure dose of the wafer to be processed meets the first exposure dose.

14. The photolithography device of claim 11, wherein The determination unit is further specifically configured to determine the target preset interval as the second preset interval when the exposure intensity is in the second preset interval, and acquire an exposure dose of a wafer to be processed; and determine the wafer to be processed as the target wafer when the exposure dose of the wafer to be processed meets the second exposure dose.

15. The photolithography device of claim 12, wherein The determination unit is further configured to output a warning information when the exposure intensity is less than a preset lower limit value of the third preset interval; and the warning information is used to prompt to replace a lens of the photolithography machine; and perform the step of determining the target preset interval corresponding to the photolithography machine according to the exposure intensity when the exposure intensity is greater than or equal to the preset lower limit value of the third preset interval.

16. The photolithography device of any one of claims 9 to 15, wherein The determining unit is further configured to determine an exposure dose of the current batch of wafers to be processed; and when the exposure dose meets the target exposure dose, determine a target preset interval corresponding to the target exposure dose; and according to the target preset interval, determine a photolithography machine in which the exposure intensity is in the target preset interval; and the photolithography unit is further configured to schedule the current batch of wafers to be processed to the photolithography machine and perform photolithography processing.

17. A photolithography device, comprising: The photolithography device comprises a memory and a processor, wherein the memory is configured to store a computer program capable of running on the processor; and the processor is configured to execute the photolithography method according to any one of claims 1 to 8 when the computer program is running.

18. A computer storage medium, comprising: The computer storage medium stores a computer program, and the computer program is executed by at least one processor to implement the photolithography method according to any one of claims 1 to 8.

Images