High-frequency induction-low-frequency detection lorentz force type micro-magnetometer and preparation method thereof

Abstract

The application discloses a high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer and a preparation method thereof. The magnetometer comprises a high-frequency resonance component, a low-frequency resonance component and a coupling beam between the two components. The high-frequency resonance component comprises a driving electrode, a high-frequency resonance structure, an insulating layer and a metal coil. The driving electrode is arranged between the high-frequency resonance structure and a substrate sheet. The low-frequency resonance component comprises an induction electrode and a low-frequency resonance structure. The resonance frequency of the high-frequency resonance structure and the resonance frequency of the low-frequency resonance structure are in an integer ratio and are greater than or equal to 2:1. The application has an inner resonance coupling resonance system formed by the high-frequency resonance structure and the low-frequency resonance structure with a resonance frequency ratio greater than or equal to 2:1. The Lorentz force type magnetic field induction structure is arranged on the high-frequency resonance structure, and the detection output structure is arranged on the low-frequency resonance structure. Meanwhile, the high-frequency resonance structure adopts electrostatic driving and Lorentz force driving in combination, so that the power consumption of the magnetometer is effectively reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to a micromechanical magnetometer and a preparation method, in particular to a high-frequency induction-low-frequency detection Lorentz force type micro magnetometer and a preparation method. BACKGROUND

[0002] Micro-Electro-Mechanical Systems (MEMS) is the combination of microelectronics and micro-mechanics, which involves microelectronics, micro-mechanics, micro-optics, new materials, information and control, and various disciplines such as physics, chemistry and biology, and uses microelectronics and micro-machining technology to integrate magnetic field magnetometers, signal processors and actuators on a substrate to manufacture new type of magnetometers, forming a micro-electro-mechanical system.

[0003] MEMS magnetometers are used to measure magnetic induction, and have been widely used in industries, agriculture, oceans, meteorology, aerospace, transportation, national defense, and medical treatment. Resonant magnetometers use mechanical resonance principles to detect magnetic field signals through Lorentz force or other electromagnetic effects, and their effects are better than other types of magnetometers. At present, most MEMS magnetic field magnetometers are based on Lorentz force, and the basic structure of this type of magnetic field magnetometer is a magnetic field cantilever beam structure. When a magnetic field exists, the interaction between the current and the magnetic field generates a Lorentz force, and the cantilever beam is deformed by the Lorentz force acting on the free end. The resonant displacement of the cantilever beam is measured by using capacitive detection, piezoresistive detection or optical detection, so as to measure the strength and direction of the magnetic field. However, as the sensitivity requirements of the magnetometer gradually increase, in order to further improve the sensitivity and resolution of the Lorentz force type micro resonant structure, the traditional Lorentz force type magnetometer has the magnetic field sensing structure and the detection output structure located on the same resonant structure. Therefore, the increase of the resonant structure amplitude required for improving the performance of the magnetometer must rely on the increase of the Lorentz force current, and thus the current of the excitation coil needs to be increased. The power consumption of the device is proportional to the square of the current, thereby greatly increasing the power consumption of the system, which greatly restricts the development of low-power practical magnetometers. SUMMARY

[0004] The purpose of the present application is to overcome the above-mentioned problems, and to provide a high-frequency induction-low-frequency detection Lorentz force type micro magnetometer. The Lorentz force type micro magnetometer has an internal resonant coupling resonant system formed by a high-frequency resonant structure and a low-frequency resonant structure with a resonant frequency ratio greater than or equal to 2:1. The Lorentz force type magnetic field sensing structure is placed on the high-frequency resonant structure, and the detection output structure is placed on the low-frequency resonant structure. At the same time, the high-frequency resonant structure adopts a combination of electrostatic driving and Lorentz force driving, which can overcome the disadvantage of large excitation current required for improving the sensitivity of the traditional Lorentz force type resonant structure, and effectively reduce the power consumption of the magnetometer.

[0005] Another object of the present application is to provide a preparation method of a high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer.

[0006] The object of the present application is achieved by the following technical solutions.

[0007] A high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer comprises a high-frequency resonance assembly, a low-frequency resonance assembly and a coupling beam between the two resonance assemblies.

[0008] The high-frequency resonance assembly comprises a driving electrode, a high-frequency resonance structure, an insulating layer and a metal coil, wherein the insulating layer is arranged on the high-frequency resonance structure, and the metal coil is arranged on the insulating layer.

[0009] The low-frequency resonance assembly comprises an induction electrode and a low-frequency resonance structure.

[0010] The low-frequency resonance structure is connected with the high-frequency resonance structure through the coupling beam, and the resonance frequency of the high-frequency resonance structure and the resonance frequency of the low-frequency resonance structure are in an integer ratio relationship and the frequency ratio is greater than or equal to 2:1.

[0011] In the working state, a direct current bias voltage is applied to the silicon body of the inner resonance resonance structure formed by the coupling beam connecting the high-frequency and low-frequency resonance structures, a direct current voltage is applied to the induction electrode located on one side of the low-frequency resonance structure to form a flat plate capacitor with the silicon body of the low-frequency resonance structure, and an alternating current voltage with the same frequency as the torsional or translational resonance mode of the high-frequency resonance structure is applied to the driving electrode located on one side of the high-frequency resonance structure to make the high-frequency resonance structure resonate and approach a nonlinear state. An alternating current with the same frequency and phase as the torsional or translational resonance mode of the high-frequency resonance structure is passed through the metal coil on the high-frequency resonance structure, and the metal coil generates a Lorentz force under an external magnetic field to drive the high-frequency resonance structure into a nonlinear state, realizing the combination of electrostatic driving and Lorentz force driving of the high-frequency resonance structure.

[0012] When the high-frequency resonance structure enters the nonlinear state, it reaches the inner resonance state. When the input power is constant, the nonlinear energy of the high-frequency resonance structure is transferred to the low-frequency resonance structure through the coupling beam, so that the low-frequency resonance structure starts to vibrate, and the low-frequency resonance structure generates a greater amplitude due to the amplification effect of the inner resonance on the low-frequency beam amplitude. The change of the capacitance of the flat plate capacitor formed by the induction electrode on one side of the low-frequency resonance structure and the silicon body of the low-frequency resonance structure can reflect the size of the magnetic field.

[0013] In one preferred embodiment of the present application, the resonance modes of the high-frequency resonance structure and the low-frequency resonance structure correspond to the same vibration mode, and are torsional resonance modes or in-plane translational modes at the same time.

[0014] If the torsional mode is selected, the driving electrode and the sensing electrode are arranged between the high-frequency resonant structure and the substrate sheet and between the low-frequency resonant structure and the substrate sheet, respectively.

[0015] If the in-plane translational mode is selected, the driving electrode and the sensing electrode are arranged at any position around the high-frequency resonant structure and the low-frequency resonant structure suitable for driving and detecting the translational mode.

[0016] In one preferred embodiment of the present application, the driving electrode and the sensing electrode are each provided with one or two or more.

[0017] In one preferred embodiment of the present application, the insulating layer comprises a first layer of insulating layer and a second layer of insulating layer; and the metal coil comprises a first layer of metal coil and a second layer of metal coil.

[0018] The first layer of insulating layer, the first layer of metal coil, the second layer of insulating layer and the second layer of metal coil are sequentially arranged on the high-frequency resonant structure.

[0019] Further, the first layer of metal coil and the second layer of metal coil each have at least one layer.

[0020] A preparation method of a high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer, comprising the following steps:

[0021] (1) preparing a substrate sheet, depositing a metal layer above the substrate sheet, defining two groups of plate electrode patterns on the metal layer through photolithography, and etching the metal layer to form a driving electrode and a sensing electrode on the substrate sheet;

[0022] (2) preparing a device silicon sheet, defining a cavity pattern on one side of the device silicon sheet through photolithography, and etching a cavity structure;

[0023] (3) turning over the above device silicon sheet, aligning the surface of the device silicon sheet with the surface of the substrate sheet, and bonding through a bonding technique; the cavity structure is located between the device silicon sheet and the substrate sheet;

[0024] (4) thinning the device silicon sheet, depositing an insulating layer film on the device silicon sheet, defining a pattern of a first layer of insulating layer through photolithography, and etching to form the first layer of insulating layer;

[0025] (5) depositing a metal layer on the first insulating layer, defining a pattern of a first layer of metal coil through photolithography, and etching to form the first layer of metal coil;

[0026] (6) depositing an insulating layer film on the first layer of metal coil, defining a pattern of a second layer of insulating layer through photolithography, and etching to form the second layer of insulating layer;

[0027] (7) depositing a metal layer on the second insulating layer, defining the pattern of the second layer of metal coil by photoetching, and etching to form the second layer of metal coil; the second layer of metal coil leads the electrode of the first layer of metal coil to the top surface;

[0028] (8) etching the device silicon wafer to form the high-frequency resonance structure and the low-frequency resonance structure; the high-frequency resonance structure and the low-frequency resonance structure are connected by a coupling beam; the high-frequency resonance structure is sequentially provided with the first layer of insulating layer, the first layer of metal coil, the second layer of insulating layer and the second layer of metal coil;

[0029] (9) completing the preparation of the Lorentz force type micro-magnetometer.

[0030] Compared with the prior art, the present application has the following beneficial effects:

[0031] 1. The Lorentz force type micro-magnetometer of the present application utilizes the internal resonance principle to construct a resonance system with two resonance structures coupled by a weak coupling beam, places the magnetic field sensing structure on the high-frequency resonance structure, and places the detection output structure on the low-frequency resonance structure, and adopts the combination of electrostatic driving and Lorentz force driving for the driving mode of the high-frequency resonance structure, thereby effectively overcoming the shortcoming of the traditional Lorentz force type resonance structure that requires large excitation current to improve the sensitivity, and reducing the power consumption of the system.

[0032] 2. By utilizing the internal resonance phenomenon in the nonlinear state, when the high-frequency resonance structure enters the nonlinear state, it will be coupled with the low-frequency resonance structure, energy transfer will occur between the coupled modes, and when the input power is unchanged, the energy of the high-frequency resonance structure will be partially transferred to the low-frequency resonance structure, thereby forcing the low-frequency resonance structure to vibrate and increasing its amplitude, and greatly improving the sensitivity of the magnetometer.

[0033] 3. Compared with the traditional Lorentz force type resonance structure, the present application can separate the sensing structure and the detection output structure, and place the magnetic field sensing structure on the high-frequency resonance structure and the detection output structure on the low-frequency resonance structure. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 The figure is the working flow chart of the high-frequency sensing-low-frequency detection Lorentz force type micro-magnetometer of the present application.

[0035] Figure 2 The figure is the sectional view of the high-frequency sensing-low-frequency detection Lorentz force type micro-magnetometer of the present application.

[0036] Figures 3-9 The figure is the sectional view of the preparation process of the high-frequency sensing-low-frequency detection Lorentz force type micro-magnetometer of the present application, wherein, Figure 3A cross-sectional view for depositing a metal layer on a substrate wafer and etching a flat plate electrode, Figure 4 A cross-sectional view for etching a cavity on a device wafer, Figure 5 A cross-sectional view for a bonding process of aligning a device wafer with a substrate wafer, Figure 6 A cross-sectional view for depositing a first insulating layer on the top of a thinned device wafer and etching, Figure 7 A cross-sectional view for depositing a metal layer on the top insulating layer of a device wafer and etching a first layer of metal coil, Figure 8 A cross-sectional view for depositing a second insulating layer on the surface of the top metal coil of a device wafer and etching, Figure 9 A cross-sectional view for depositing a metal layer on the top second insulating layer of a device wafer and etching a second layer of metal coil.

[0037] The reference signs in the drawings are as follows:

[0038] 11 Substrate sheet 111 Cavity structure 12 Induction electrode 13 Drive electrode 21 Device silicon wafer 211 High frequency resonant structure 212 Low frequency resonant structure 2111 First layer of insulation 2112 First layer of metal coil 2113 Second layer of insulation 2114 Second layer of metal coil DETAILED DESCRIPTION

[0039] In order to enable those skilled in the art to have a better understanding of the technical solutions of the present application, the present application will be further described below in combination with embodiments and drawings. The embodiments take the resonant mode of high-frequency resonant structure and low-frequency resonant structure as torsional resonant mode as an example, so the high-frequency resonant structure is high-frequency torsional plate, and the low-frequency resonant structure is low-frequency torsional plate, but the embodiments of the present application are not limited to this.

[0040] Embodiment 1

[0041] Referring to Figures 1-2 , the high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer of the embodiment includes a high-frequency resonant assembly, a low-frequency resonant assembly, and a coupling beam (not shown in the drawings). The high-frequency resonant assembly includes a driving electrode 13, a high-frequency resonant structure 211, an insulating layer, and a metal coil, the insulating layer is arranged on the high-frequency resonant structure 211, the metal coil is arranged on the insulating layer, and the driving electrode 13 is arranged between the high-frequency resonant structure 211 and a substrate wafer 11.

[0042] Specifically, the insulating layer includes a first layer of insulating layer 2111 and a second layer of insulating layer 2113, the metal coil includes a first layer of metal coil 2112 and a second layer of metal coil 2114, and the first layer of insulating layer 2111, the first layer of metal coil 2112, the second layer of insulating layer 2113, and the second layer of metal coil 2114 are sequentially arranged on the high-frequency resonant structure 211.

[0043] Referring to Figure 2 , the low-frequency resonant assembly includes an induction electrode 12 and a low-frequency resonant structure 212, and the induction electrode 12 is arranged between the low-frequency resonant structure 212 and the substrate wafer 11.

[0044] Referring to Figure 2 , the driving electrode 13 and the sensing electrode 12 are both provided with two.

[0045] Further, the low-frequency resonant structure 212 is connected with the high-frequency resonant structure 211 through the coupling beam; the resonant frequency of the high-frequency resonant structure 211 and the resonant frequency of the low-frequency resonant structure 212 are in an integer ratio relationship and the frequency ratio is greater than or equal to 2:1.

[0046] Referring to Figures 1-2 , the working principle of the high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer of the embodiment is as follows:

[0047] In the working state, a DC bias voltage is applied to the silicon body of the inner resonance resonant structure formed by the coupling beam connecting the high-frequency 211 and the low-frequency resonant structure 212; a DC voltage is applied to the sensing electrode 12 located on one side of the low-frequency resonant structure 212 to form a flat plate capacitor with the silicon body of the low-frequency resonant structure 212; further, an AC voltage with the same frequency as the torsional mode of the high-frequency resonant structure 211 is applied to the driving electrode 13 located on one side of the high-frequency resonant structure 211 to make the high-frequency resonant structure 211 approach the nonlinear state; further, an AC current with the same frequency as the torsional mode of the high-frequency resonant structure 211 is passed through the metal coil on the high-frequency resonant structure 211, and the metal coil carrying the current generates Lorentz force under the external magnetic field to drive the high-frequency resonant structure 211 into the nonlinear state, realizing the combination of electrostatic driving and Lorentz force driving the high-frequency resonant structure 211.

[0048] When the high-frequency resonant structure 211 enters the nonlinear state, it reaches the inner resonance state; when the input power is unchanged, part of the energy of the high-frequency resonant structure 211 will be transferred to the low-frequency resonant structure 212 through the coupling beam, so that the low-frequency resonant structure 212 starts to vibrate, and the low-frequency resonant structure 212 generates a greater amplitude due to the amplification effect of the inner resonance on the low-frequency beam amplitude. The change of the capacitance of the flat plate capacitor composed of the sensing electrode 12 on one side of the low-frequency resonant structure 212 and the silicon body of the low-frequency resonant structure 212 can reflect the size of the magnetic field in the X or Y direction.

[0049] Further, the embodiment only takes the inner resonance coupling torsional resonant plate for in-plane magnetic field (x, y axis) measurement as an example to illustrate the content and principle of the application. In fact, if an in-plane contraction and expansion inner resonance system is constructed, it can be used to measure the magnetic field in the z-axis direction (out-of-plane).

[0050] In summary, the embodiment provides a high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer. The Lorentz force type micro-magnetometer is coupled to form an integral resonant system by using the internal resonance principle. The high-frequency resonant structure 211 and the low-frequency resonant structure 212 are connected by a coupling beam to form a weak coupling. In the coupling system, the high-frequency resonant structure serves as a magnetic field sensing structure, and the low-frequency resonant structure serves as a detection output structure. The torsional mode resonant frequencies of the two structures have an integer ratio relationship and a frequency ratio greater than or equal to 2:1. By using the internal resonance phenomenon and changing the structure of the traditional Lorentz force type magnetometer, the Lorentz force type micro-magnetometer can simultaneously realize low power consumption and high sensitivity in operation. The high-frequency resonant structure 211 of the movable structure of the Lorentz force type micro-magnetometer is deposited with a metal coil as a Lorentz force driving coil. The combination of electrostatic driving and Lorentz force driving effectively overcomes the shortcoming of the traditional Lorentz force type magnetometer, that is, increasing the excitation current to increase the power consumption in order to improve the sensitivity. The low-frequency resonant structure and the cavity plate electrode on the substrate form a plate capacitor, and the capacitor gap width is directly equal to the depth of the cavity structure 111, thereby simplifying the design of the capacitor gap and eliminating the consideration of the actual thickness value of the deposited film.

[0051] Embodiment 2

[0052] Referring to Figures 2-9 The preparation method of the high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer of the embodiment includes the following steps:

[0053] (1) A glass plate is prepared as a substrate sheet 11. An aluminum material layer is deposited on the substrate sheet as a metal layer by using the magnetron sputtering technology in physical vapor deposition. Four plate electrode patterns are defined by photolithography. The metal layer is etched by a wet etching method to form two cavity one-side driving electrodes 13 and two cavity other-side sensing electrodes 12 on the substrate sheet 11, as shown in Figure 3 .

[0054] (2) A device silicon wafer 21 (low resistivity P-type heavily doped (100) silicon wafer) is prepared. The cavity pattern is defined on one side of the device silicon wafer 21 by photolithography, and the cavity structure 111 is etched on the device silicon wafer by deep reactive ion etching technology, providing the motion space for the movable structure in the future and the required capacitor gap between the resonant structure and the electrode in the future, as shown in Figure 4 .

[0055] (3) The device silicon wafer 21 is flipped and aligned with the surface of the substrate sheet 11, and then bonded by an anodic bonding technology. The cavity structure 111 is formed between the device silicon wafer 21 and the substrate sheet 11, as shown in Figure 5 .

[0056] (4) The bonded device silicon wafer 21 is thinned to the desired thickness by wafer thinning technology, and then a thin film of insulating layer such as silicon oxide film is deposited on the top thereof by plasma enhanced chemical vapor deposition (PECVD) technology, and then the insulating layer pattern is defined by photolithography, and the insulating layer is etched by reactive ion etching technology to form the top first layer of insulating layer 2111, such as Figure 6 .

[0057] (5) A layer of aluminum material as a metal layer is deposited on the first layer of insulating layer 2111 by magnetron sputtering method in physical vapor deposition, the metal coil pattern is defined by photolithography, and the first layer of metal coil 2112 is formed by wet etching technology, such as Figure 7 .

[0058] (6) A thin film of insulating layer such as silicon oxide film is deposited on the surface of the top first layer of metal coil 2112 of the bonded device silicon wafer by plasma enhanced chemical vapor deposition (PECVD) technology, and then the insulating layer pattern is defined by photolithography, and the second layer of insulating layer 2113 is etched by reactive ion etching technology to form the second layer of insulating layer 2113 as the insulating layer between the first metal coil 2112 and the second metal coil 2114, such as Figure 8 .

[0059] (7) A layer of aluminum material as a metal layer is deposited on the second layer of insulating layer 2113 by magnetron sputtering method in physical vapor deposition, the metal coil pattern is defined by photolithography, and the second layer of metal coil 2114 is formed by wet etching technology, and the electrode of the first layer of metal coil 2112 is led out to the top plane, such as Figure 9 .

[0060] (8) Deep reactive ion etching is performed on the bonded device silicon wafer 21 to release the movable structure on the device silicon wafer 21: including high-frequency resonant structure 211 and low-frequency resonant structure 212, which are coupled together by a coupling beam; wherein the substrate cavity side driving electrode 13 and the high-frequency resonant structure 211 in the movable structure on the device silicon wafer 21 constitute a plate capacitor, and the substrate cavity other side sensing electrode 12 and the low-frequency resonant structure 212 in the movable structure on the device silicon wafer 21 constitute a plate capacitor, and the capacitance gap of the two plate capacitors is provided by the cavity structure 111, such as Figure 2 .

[0061] (9) Thus, the preparation of the Lorentz force type Lorentz force micro-magnetometer with high-frequency induction and low-frequency detection is completed.

[0062] The above is the preferred embodiment of the present application, but the embodiment of the present application is not limited by the above, and any change, modification, substitution, combination, simplification, etc. made without departing from the spirit and principles of the present application shall be equivalent replacement and included in the protection scope of the present application.

Claims

1. A high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer, characterized by, The high-frequency resonance component, the low-frequency resonance component, and the coupling beam between the two resonance components; The high-frequency resonance component comprises a driving electrode, a high-frequency resonance structure, an insulating layer, and a metal coil, the insulating layer is arranged on the high-frequency resonance structure, and the metal coil is arranged on the insulating layer; The low-frequency resonance component comprises an induction electrode and a low-frequency resonance structure; The low-frequency resonance structure and the high-frequency resonance structure are connected through the coupling beam, the resonance frequency of the high-frequency resonance structure and the resonance frequency of the low-frequency resonance structure are in an integer ratio relationship, and the frequency ratio is greater than or equal to 2:1; In the working state, a direct current bias voltage is applied to the silicon body of the internal resonance resonance structure formed by the coupling beam connecting the high-frequency and low-frequency resonance structures, a direct current voltage is applied to the induction electrode located on one side of the low-frequency resonance structure to form a flat capacitor with the silicon body of the low-frequency resonance structure, and an alternating current voltage with the same frequency as the torsional or translational resonance mode of the high-frequency resonance structure is applied to the driving electrode located on one side of the high-frequency resonance structure to make the high-frequency resonance structure resonate and approach a nonlinear state; An alternating current with the same frequency and phase as the torsional or translational resonance mode of the high-frequency resonance structure is further applied to the metal coil on the high-frequency resonance structure, and the corresponding metal coil generates a Lorentz force in an external magnetic field to drive the high-frequency resonance structure into a nonlinear state, realizing the combination of electrostatic driving and Lorentz force driving of the high-frequency resonance structure; When the high-frequency resonance structure enters the nonlinear state and reaches the internal resonance state, the nonlinear energy of the high-frequency resonance structure is transferred to the low-frequency resonance structure through the coupling beam under the condition that the input power remains unchanged, so that the low-frequency resonance structure starts to vibrate, and the low-frequency resonance structure generates a greater amplitude due to the amplification effect of the internal resonance on the low-frequency beam amplitude, and the change of the capacitance of the flat capacitor formed by the induction electrode on one side of the low-frequency resonance structure and the silicon body of the low-frequency resonance structure can reflect the size of the magnetic field.

2. The high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer according to claim 1, characterized by, The resonance modes of the high-frequency resonance structure and the low-frequency resonance structure correspond to the same vibration mode, and are both torsional resonance modes or both in-plane translational modes; If the vibration mode is a torsional mode, the driving electrode and the induction electrode should be arranged between the high-frequency resonance structure and the substrate sheet and between the low-frequency resonance structure and the substrate sheet, respectively. If the vibration mode is an in-plane translational mode, the driving electrode and the induction electrode are arranged at any position suitable for driving and detecting the structure translational mode around the high-frequency resonance structure and the low-frequency resonance structure.

3. The high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer according to claim 1, characterized by The driving electrode and the induction electrode are each provided with one or two or more.

4. The high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer according to claim 1, characterized by The insulating layer comprises a first layer of insulating layer and a second layer of insulating layer, and the metal coil comprises a first layer of metal coil and a second layer of metal coil. The first layer of insulating layer, the first layer of metal coil, the second layer of insulating layer, and the second layer of metal coil are sequentially arranged on the high-frequency resonance structure.

5. The high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer according to claim 4, characterized by The first layer of metal coil and the second layer of metal coil each have at least one layer.

6. A method for manufacturing a high-frequency induction-low-frequency detection Lorentz force type micro-magnetometer according to any one of claims 1 to 5, characterized by, The method comprises the following steps: (1) preparing a substrate sheet, depositing a metal layer above the substrate sheet, defining two groups of flat electrode patterns on the metal layer through photolithography, and etching the metal layer to form a driving electrode and an induction electrode on the substrate sheet; (2) preparing a device silicon wafer, defining a cavity pattern on one side of the device silicon wafer by photolithography, and etching a cavity structure; (3) turning over the device silicon wafer, aligning the device silicon wafer with the surface of the substrate wafer, and bonding by bonding technology; the cavity structure is located between the device silicon wafer and the substrate wafer; (4) thinning the device silicon wafer; depositing an insulating layer film on the device silicon wafer, defining a pattern of the first layer of insulating layer by photolithography, and etching to form the first layer of insulating layer; (5) depositing a layer of metal on the first insulating layer, defining a pattern of the first layer of metal coil by photolithography, and etching to form the first layer of metal coil; (6) depositing an insulating layer film on the first layer of metal coil, defining a pattern of the second layer of insulating layer by photolithography, and etching to form the second layer of insulating layer; (7) depositing a layer of metal on the second insulating layer, defining a pattern of the second layer of metal coil by photolithography, and etching to form the second layer of metal coil; the second layer of metal coil leads the electrode of the first layer of metal coil to the top surface; (8) etching the device silicon wafer to form a high-frequency resonant structure and a low-frequency resonant structure; the high-frequency resonant structure and the low-frequency resonant structure are connected by a coupling beam; the high-frequency resonant structure is sequentially provided with the first layer of insulating layer, the first layer of metal coil, the second layer of insulating layer and the second layer of metal coil; (9) completing the preparation of the Lorentz force type micro-magnetometer.

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