Exhaust hole adjusting device capable of controlling uniformity and crystal processing equipment

Abstract

The application discloses a kind of exhaust hole adjusting device of controllable uniformity, belong to the technical field of semiconductor processing, the exhaust hole adjusting device is adapted to crystal processing area, the exhaust hole adjusting device includes: first exhaust hole plate around the crystal processing area, a plurality of exhaust holes are arranged on the first exhaust hole plate;Second exhaust hole plate around the crystal processing area, the second exhaust hole plate is arranged in parallel in the upper of first exhaust hole plate, and second exhaust hole plate is equipped with the drive mechanism for driving its lifting motion;Wherein, by adjusting the distance between first exhaust hole plate and second exhaust hole plate to control the airflow size through each described exhaust hole, to achieve in the processing process of crystal, with the rising of wafer time quantity, reach the purpose of time uniformity stabilization.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor processing, and particularly relates to an exhaust hole adjusting device capable of controlling uniformity and a crystal processing equipment. BACKGROUND

[0002] In the edge improvement control technology of the crystal processing process suitable for the dry etching equipment, in order to obtain the rising of the etching rate of the edge part of the crystal and the good etching profile characteristics, the back temperature control technology of the focusing ring is used.

[0003] The focusing ring is installed on the shell of the electronic stability control system, the temperature of the focusing ring is cooled or heated, the heat zone control is performed, and the desired etching rate can be obtained.

[0004] The cooling zone of the focusing ring can improve the etching rate and obtain the desired profile, but the uniformity characteristics of the etching rate will be poor. In order to improve the uniformity of the edge of the crystal and the whole crystal, there is a lack of technology capable of controlling the etching uniformity in the crystal processing process in the prior art. SUMMARY

[0005] In view of this, in order to solve the above problems existing in the prior art, the purpose of the present application is to provide an exhaust hole adjusting device capable of controlling uniformity to achieve the purpose of stabilizing the time uniformity with the rising of the wafer time quantity in the processing process of the crystal.

[0006] The technical scheme adopted by the present application is: an exhaust hole adjusting device capable of controlling uniformity, the exhaust hole adjusting device is adapted to a crystal processing zone, and the exhaust hole adjusting device comprises:

[0007] A first exhaust hole plate surrounding the crystal processing zone, a plurality of exhaust holes are arranged on the first exhaust hole plate;

[0008] A second exhaust hole plate surrounding the crystal processing zone, the second exhaust hole plate is arranged in parallel above the first exhaust hole plate, and the second exhaust hole plate is provided with a driving mechanism for driving the second exhaust hole plate to perform lifting motion;

[0009] Wherein, the distance between the first exhaust hole plate and the second exhaust hole plate is adjusted to control the air flow through each exhaust hole.

[0010] Further, the first exhaust hole plate is arranged on the air flow channel between the crystal processing zone and the crystal etching chamber, and the air flow passes through each exhaust hole to form an air flow channel through each exhaust hole.

[0011] Further, the first exhaust hole plate is annular, and the exhaust holes are arranged in multiple layers, and the exhaust holes in each layer are uniformly arranged along the same circumferential direction to prevent turbulence of the airflow.

[0012] Further, the second exhaust hole plate is annular, and the exhaust holes are arranged in multiple layers, and the exhaust holes in each layer are uniformly arranged along the same circumferential direction to prevent turbulence of the airflow.

[0013] Further, the second exhaust hole plate is annular, and the exhaust holes are arranged in multiple layers, and the exhaust holes in each layer are uniformly arranged along the same circumferential direction to prevent turbulence of the airflow.

[0014] Further, the second exhaust hole plate is annular, and the exhaust holes are arranged in multiple layers, and the exhaust holes in each layer are uniformly arranged along the same circumferential direction to prevent turbulence of the airflow.

[0015] Further, the second exhaust hole plate includes an edge exhaust hole plate, a middle exhaust hole plate and a center exhaust hole plate arranged in an annular manner, the edge exhaust hole plate, the middle exhaust hole plate and the center exhaust hole plate are arranged in a concentric manner, and the edge exhaust hole plate, the middle exhaust hole plate and the center exhaust hole plate are arranged with a hollow space distance between each other.

[0016] Further, the second exhaust hole plate includes an edge exhaust hole plate, a middle exhaust hole plate and a center exhaust hole plate arranged in an annular manner, the edge exhaust hole plate, the middle exhaust hole plate and the center exhaust hole plate are arranged in a concentric manner, and the edge exhaust hole plate, the middle exhaust hole plate and the center exhaust hole plate are arranged with a hollow space distance between each other.

[0017] Further, the driving mechanism is a lifter connected with lifting rods arranged in a symmetrical manner, and each lifting rod is connected to the second exhaust hole plate to drive the up-down position of the second exhaust hole plate to be effectively adjusted.

[0018] The application also provides a crystal processing device, which comprises a device main body and an etching chamber arranged in the device main body, wherein the etching chamber is provided with a crystal processing area, and a wafer is arranged on the crystal processing area.

[0019] The etching chamber is connected with plasma, and the flow rate of the plasma is controlled by the exhaust hole adjusting device with controllable uniformity.

[0020] The application has the following advantages:

[0021] 1. The exhaust hole adjusting device with controllable uniformity is used, and the second exhaust hole plate is driven to move up and down relative to the first exhaust hole plate under the action of the driving mechanism, so as to adjust the distance between the first exhaust hole plate and the second exhaust hole plate, and the flow rate of the airflow is well controlled. With the continuous increase of the etching amount of the wafer in the high-temperature area of the focusing ring, the stability of the etching uniformity is ensured by controlling the flow rate of the airflow.

[0022] 2. The exhaust hole adjusting device of the present application can further ensure the yield of the edge etching process of the wafer during the wafer processing process under the condition of controlling the flow rate of the air flow. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a schematic view of the overall structure of the exhaust hole adjusting device of the present application;

[0024] Figure 2 is a schematic view of the overall structure of the exhaust hole adjusting device of the present application;

[0025] Figure 3 is a schematic view of the principle of the exhaust hole adjusting device of the present application in operation;

[0026] Figure 4 is a schematic view of the partial structure of the wafer processing device of the present application;

[0027] Figure 5 is a schematic view of the structure of the wafer processing device of the present application;

[0028] The figures are marked as follows:

[0029] 1 - electronic stability control system, 2 - bottom ring, 3 - central exhaust hole plate, 4 - intermediate exhaust hole plate, 5 - edge exhaust hole plate, 6 - first exhaust hole plate, 7 - support, 8 - lifting support rod, 9 - second exhaust hole plate, 10 - wafer, 11 - lifter, 12 - blocking protrusion, 13 - exhaust hole, 14 - etching chamber, 15 - focusing ring. DETAILED DESCRIPTION

[0030] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0031] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0032] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0033] It should be noted that:

[0034] In the description of the embodiments of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "arranged", "connected" should be understood broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances; the drawings in the embodiments are used to clearly and completely describe the technical solutions in the embodiments of the present application, obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0035] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application, obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0036] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0037] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0038] It should be noted that:

[0039] In the description of the embodiments of the present application, it also needs to be explained that, unless otherwise explicitly specified and limited, the terms "arrange", "connect" should be understood broadly, for example, can be fixedly connected, can also be detachably connected, or integrally connected; can be directly connected, or indirectly connected through intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances; the drawings in the embodiments are used to clearly and completely describe the technical solutions in the embodiments of the present application, and obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0040] Embodiment 1

[0041] As Figures 1-5 shown, in the present embodiment, a uniformity-controllable exhaust hole 13 adjusting device is specifically disclosed, which aims to solve the problem that the uniformity of the etching rate of the crystal will be deteriorated during the processing of the crystal. Specifically, the exhaust hole 13 adjusting device is adapted to the crystal processing area, and the exhaust hole 13 adjusting device comprises: a first exhaust hole plate 6 and a second exhaust hole plate 9, the first exhaust hole plate 6 is arranged around the periphery of the crystal processing area, and a plurality of exhaust holes 13 are arranged on the first exhaust hole plate 6, and the size of each exhaust hole 13 can be set according to industry specifications. Since the first exhaust hole plate 6 is arranged on the air flow channel between the crystal processing area and the crystal etching chamber 14, and the air flows through each of the exhaust holes 13, each of the exhaust holes 13 serves as the main passage for the air flow when the crystal is processed.

[0042] In actual application, the first exhaust hole plate 6 is designed as a ring shape, and the exhaust holes 13 are distributed in multiple layers, and the exhaust holes 13 in each layer are uniformly arranged along the same circumferential direction (i.e. the spacing between each exhaust hole 13 in the same circumferential direction is equal). This arrangement ensures that when the gas flows through each exhaust hole 13, it can achieve good air flow stability and will not cause air flow turbulence.

[0043] The second exhaust hole plate 9 is arranged around the crystal processing area, the second exhaust hole plate 9 is arranged in parallel above the first exhaust hole plate 6, the second exhaust hole plate 9 can be lifted and lowered in the vertical direction to realize the relative position adjustment of the second exhaust hole plate 9 relative to the first exhaust hole plate 6, and the second exhaust hole plate 9 is provided with a driving mechanism for driving it to lift and lower. In actual application, the driving mechanism is provided as a lifter 11, the lifter 11 is driven by a stepping motor, the lifter 11 is connected with symmetrically arranged lifting rods 8, each lifting rod 8 is connected to the second exhaust hole plate 9. Of course, in actual application, the design of the lifting rod 8 is not limited to only two, but also three or even more. After each lifting rod 8 is connected to the second exhaust hole plate 9, the second exhaust hole plate 9 can be well supported.

[0044] In actual application, the second exhaust hole plate 9 is designed to have a coverage area that is adapted to the first exhaust hole plate 6, and the second exhaust hole plate 9 is provided in a hollow shape. The second exhaust hole plate 9 is provided in a hollow shape because the flow direction of the gas flow is first through the second exhaust hole plate 9 and then to the second exhaust hole plate 9. Therefore, the second exhaust hole plate 9 provided in a hollow shape is to avoid blocking the gas flow.

[0045] In normal operation, the distance between the first exhaust hole plate 6 and the second exhaust hole plate 9 is adjusted to control the size of the gas flow through each of the exhaust holes 13. To further achieve good control of the gas flow rate after the distance between the first exhaust hole plate 6 and the second exhaust hole plate 9, a plurality of blocking protrusions 12 are distributed on the second exhaust hole plate 9. The number of the blocking protrusions 12 is less than the number of the exhaust holes 13, each of the blocking protrusions 12 corresponds to each of the exhaust holes 13. It should be noted that it is not a one-to-one correspondence, but all the blocking protrusions 12 only correspond to part of the exhaust holes 13. The number of the blocking protrusions 12 is set to be less than the number of the exhaust holes 13, which assumes that when the second exhaust hole plate 9 is completely close to the first exhaust hole plate 6, all the exhaust holes 13 of the first exhaust hole plate 6 are not closed, but ensures that the exhaust holes 13 of the first exhaust hole plate 6 which are not provided with the blocking protrusions 12 are well exhausted. In actual application, the blocking protrusions 12 are provided in an inverted frustum shape, which helps the smooth flow of gas.

[0046] Specifically, to realize the hollow design of the second exhaust hole 13, the second exhaust hole plate 9 comprises edge exhaust hole plates 5, middle exhaust hole plates 4 and center exhaust hole plates 3 arranged in a ring shape, the edge exhaust hole plates 5, the middle exhaust hole plates 4 and the center exhaust hole plates 3 are arranged concentrically, and a hollow space is arranged between the edge exhaust hole plates 5, the middle exhaust hole plates 4 and the center exhaust hole plates 3, and the hollow space can be set according to actual conditions. To realize the fixed assembly connection between the edge exhaust hole plates 5, the middle exhaust hole plates 4 and the center exhaust hole plates 3, the edge exhaust hole plates 5, the middle exhaust hole plates 4 and the center exhaust hole plates 3 are connected and fixed through the support 7, and the connection mode of the support 7 can adopt bolt connection or welding connection.

[0047] Embodiment 2

[0048] In the present application, a crystal processing equipment is also provided, which comprises an equipment main body and an etching chamber 14 arranged in the equipment main body, the etching chamber 14 is provided with a crystal processing area and a wafer 10 arranged on the crystal processing area; the crystal processing area further comprises a bottom ring 2 arranged at the bottom and an electronic stability control system 1 (ESC) arranged above the bottom ring 2, the electronic stability control system 1 (ESC) carries the crystal to be processed above, and a focusing ring 15 is arranged around the crystal.

[0049] The etching chamber 14 is connected with plasma, and the plasma flows in the etching chamber 14 to form a flowing gas flow, and the flow rate of the plasma is controlled through the exhaust hole 13 uniformity control device as described in the above embodiment 1.

[0050] The present application is not limited to the above-mentioned optional embodiments, and anyone can derive other various forms of products under the inspiration of the present application, but regardless of any changes in shape or structure, any technical solution falling within the scope defined by the claims of the present application falls within the protection scope of the present application.

Claims

1. A uniformity-controllable exhaust hole adjusting device, the exhaust hole (13) adjusting device being adapted to a crystal processing area, the exhaust hole (13) adjusting device comprising: a first exhaust hole plate (6) surrounding the crystal processing area, the first exhaust hole plate (6) being provided with a plurality of exhaust holes (13); a second exhaust hole plate (9) surrounding the crystal processing area, the second exhaust hole plate (9) being arranged in parallel above the first exhaust hole plate (6), and the second exhaust hole plate (9) being provided with a driving mechanism for driving the second exhaust hole plate (9) to perform lifting movement; wherein the distance between the first exhaust hole plate (6) and the second exhaust hole plate (9) is adjusted to control the flow rate of the gas flowing through each of the exhaust holes (13); the first exhaust hole plate (6) is arranged on a gas flow channel between the crystal processing area and a crystal etching chamber (14), and the gas flows through each of the exhaust holes (13); the first exhaust hole plate (6) is arranged in a ring shape, and each of the exhaust holes (13) is arranged in multiple layers, and the exhaust holes (13) in each layer are uniformly arranged along the same circumferential direction; the second exhaust hole plate (9) is adapted to the first exhaust hole plate (6) in terms of coverage area, and the second exhaust hole plate (9) is arranged in a hollow shape; the second exhaust hole plate (9) is provided with a plurality of blocking protrusions (12), each of the blocking protrusions (12) corresponds to each of the exhaust holes (13), and the number of the blocking protrusions (12) is less than the number of the exhaust holes (13); the second exhaust hole plate (9) comprises a ring-shaped edge exhaust hole plate (5), a middle exhaust hole plate (4), and a center exhaust hole plate (3), the edge exhaust hole plate (5), the middle exhaust hole plate (4), and the center exhaust hole plate (3) are arranged in a concentric manner, and the edge exhaust hole plate (5), the middle exhaust hole plate (4), and the center exhaust hole plate (3) are connected and fixed by a support (7) arranged between any two of the edge exhaust hole plate (5), the middle exhaust hole plate (4), and the center exhaust hole plate (3); the driving mechanism is a lifter (11), the lifter (11) is connected with symmetrically arranged lifting struts (8), and each of the lifting struts (8) is connected to the second exhaust hole plate (9). The blocking protrusions (12) are arranged in an inverted truncated cone structure. The crystal processing device comprises a device main body and an etching chamber (14) arranged in the device main body, the etching chamber (14) is provided with a crystal processing area, and a wafer (10) is arranged on the crystal processing area; The etching chamber (14) is provided with plasma, and the flow rate of the plasma is controlled by the uniformity-controllable exhaust hole (13) adjusting device according to any one of claims 1-2. ​ ​ ​ ​ ​ ​ ​ 2. The exhaust hole (13) adjusting device capable of controlling uniformity according to claim 1, characterized by ​ 3. A crystal processing apparatus characterized by comprising: ​ ​

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