Semiconductor laser and method for manufacturing the same

Abstract

The disclosure provides a semiconductor laser, comprising: a first confinement layer, an active layer, a second confinement layer and a waveguide layer grown on a substrate in sequence, wherein a part of the upper surface of the waveguide layer is etched to form a master oscillation structure, and another part is etched to form a power amplification structure, wherein an electrical isolation region is arranged between the master oscillation structure and the power amplification structure, the master oscillation structure is used to generate a seed source, and the power amplification structure is used to output the seed source after power amplification; wherein the master oscillation structure comprises at least one group of photonic crystal structures, and / or the power amplification structure comprises at least one group of photonic crystal structures; the photonic crystal structure is used to convert a multimode seed source into a single-mode seed source. The disclosure also provides a preparation method of a semiconductor laser.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor lasers, in particular to a semiconductor laser and a preparation method thereof. BACKGROUND

[0002] Semiconductor lasers have been widely used in optical communication, photonic integration, optical pumping, laser cutting, laser display, laser radar and other fields due to their flexible structure, small insertion loss, high electro-optical conversion efficiency, simple driving, long service life and other advantages. In recent years, with the increasing demand for communication capacity, transmission rate and information integration, higher requirements have been put forward for the performance of system light sources. The demand for eye-safe, high-power, high-conversion-efficiency, high-modulation-characteristic and high-reliability communication waveband light sources has become increasingly urgent. Direct modulation semiconductor lasers have become common light sources for optical communication systems and laser radar systems because they do not need to involve complex calculations and a series of advanced format modulation. In order to reduce the use of amplifiers, improve system performance and design flexibility, and to have a longer detection distance and more accurate detection accuracy, it is necessary to realize the modulation of high-power lasers. However, the utilization rate of laser power and the bandwidth utilization rate cannot be achieved at the same time, and until the technology of fiber laser amplifier matures, high-power laser modulation output can be achieved, but at the same time, the complexity of the system is also increased. Among the currently commercial direct modulation semiconductor lasers, the most common are distributed feedback lasers (DFB) and vertical cavity surface emitting lasers (VCSEL). The material growth of these two structures involves complex processes such as secondary epitaxy, electron beam exposure or holographic exposure, which has high cost, low yield, and power of only tens of milliwatts or even microwatts.

[0003] Therefore, it is urgent to develop a master oscillator power amplifier semiconductor laser with low manufacturing cost, large modulation bandwidth and high power characteristics. SUMMARY

[0004] In view of the above problems, the present disclosure provides a semiconductor laser and a preparation method thereof to solve the above technical problems.

[0005] The first aspect of the present disclosure provides a semiconductor laser, comprising: a first confinement layer, an active layer, a second confinement layer and a waveguide layer sequentially grown on a substrate, wherein a part of the upper surface of the waveguide layer is etched to form a master oscillation structure, and another part is etched to form a power amplification structure, wherein an electrical isolation region is arranged between the master oscillation structure and the power amplification structure, the master oscillation structure is used to generate a seed source, and the power amplification structure is used to output the seed source after power amplification; wherein the master oscillation structure comprises at least one group of photonic crystal structures, and / or the power amplification structure comprises at least one group of photonic crystal structures; the photonic crystal structure is used to convert a multimode seed source into a single-mode seed source.

[0006] Further, the master oscillation structure is a ridge waveguide structure or an inverted taper waveguide structure.

[0007] Further, the power amplification structure is a tapered waveguide structure or a double-butterfly waveguide structure.

[0008] Further, the master oscillation structure and the power amplification structure have equal width at one end adjacent to each other.

[0009] Further, the etching pitch of the photonic crystal structure is 1-15 μm, and the period is 2-30 μm.

[0010] Further, it further comprises: an insulating layer on the surface of the master oscillation structure and the power amplification structure.

[0011] Further, it further comprises: a lower electrode layer on the lower surface of the substrate; and an upper electrode layer on the surface of the insulating layer.

[0012] Further, the master oscillation structure and the power amplification structure are independently excited by a power supply.

[0013] Further, it further comprises: a high-reflection film on one side of the master oscillation structure; and an anti-reflection film on one side of the power amplification structure, and the anti-reflection film is arranged opposite to the high-reflection film.

[0014] The second aspect of the present disclosure provides a preparation method of a semiconductor laser, comprising: sequentially growing a first confinement layer, an active layer, a second confinement layer and a waveguide layer on a substrate; etching a part of the waveguide layer to form a master oscillation structure, and etching another part to form a power amplification structure, wherein an electrical isolation region is etched between the master oscillation structure and the power amplification structure, the master oscillation structure is used to generate a seed source, and the power amplification structure is used to output the seed source after power amplification; etching at least one group of photonic crystal structures on the master oscillation structure and / or the power amplification structure, the photonic crystal structure is used to convert a multimode seed source into a single-mode seed source.

[0015] The present disclosure has at least the following beneficial effects compared with the prior art:

[0016] (1) The semiconductor laser disclosed herein forms a master oscillation structure and a power amplification structure by etching the waveguide layer, which is beneficial to the power of the seed laser source. At the same time, an AC signal can be added to the master oscillation region to ensure the signal input of the small-volume seed laser source, which is beneficial to the improvement of the modulation bandwidth.

[0017] (2) By setting an electrical isolation region between the main oscillation structure and the power amplifier structure, the main oscillation structure can achieve high-quality seed source output under low current.

[0018] (3) A photonic crystal structure is set on the main oscillation structure and / or power amplification structure. The etching area size of the photonic crystal structure can be greater than 1μm, which can effectively avoid high-cost processing technology such as electron beam exposure and reduce costs by using ordinary contact lithography.

[0019] (4) The semiconductor laser fabrication process provided in this disclosure avoids multiple epitaxy, improves the robustness of the device, shortens the production time, and improves the production efficiency. Attached Figure Description

[0020] To gain a more complete understanding of this disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, wherein:

[0021] Figure 1 A schematic perspective view of a semiconductor laser according to an embodiment of the present disclosure is shown.

[0022] Figure 2 Schematic illustration Figure 1 The diagram shows the structural dimensions of the semiconductor laser.

[0023] Figure 3 A partially enlarged view of a photonic crystal structure according to an embodiment of the present disclosure is shown schematically.

[0024] Figure 4 The spectrum of a semiconductor laser is schematically shown with a bias current of 110 mA for the master oscillation structure and a bias current of 3 A for the power amplification structure in the absence of a photonic crystal structure.

[0025] Figure 5 Schematic illustration Figure 1 The spectrum of the semiconductor laser shown is displayed when the bias current of the master oscillation structure is 110mA and the bias current of the power amplifier structure is 3A.

[0026] Figure 6 Schematic illustration Figure 1 The graph shows the relationship between the output optical power of a semiconductor laser and the input current.

[0027] Figure 7 Schematic illustrationFigure 1 a graph showing the mode intensity of the semiconductor laser as a function of the width of the output end of the power amplifier structure;

[0028] Figure 8 a structure perspective view of a semiconductor laser according to another embodiment of the present disclosure is schematically shown; Figure 1 a graph showing the mode intensity of the semiconductor laser as a function of the length of the power amplifier structure;

[0029] Figure 9 a structure perspective view of a semiconductor laser according to another embodiment of the present disclosure is schematically shown;

[0030] Figure 10 a structure perspective view of a semiconductor laser according to another embodiment of the present disclosure is schematically shown;

[0031] Figure 11 a flow chart of a method for manufacturing a semiconductor laser according to an embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0032] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it is to be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. However, it will be apparent to one skilled in the art that one or more embodiments can be practiced without these specific details. In other instances, well-known structures and techniques have been omitted in order to avoid obscuring the concepts of the present disclosure.

[0033] It is to be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. In addition, it is to be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or connected to the other element through a third element.

[0034] Embodiments of the present disclosure provide a semiconductor laser, comprising: a first confinement layer, an active layer, a second confinement layer and a waveguide layer grown in sequence on a substrate, wherein a part of the upper surface of the waveguide layer is etched to form a master oscillation structure, and another part is etched to form a power amplifier structure, wherein an electrical isolation region is arranged between the master oscillation structure and the power amplifier structure, the master oscillation structure is used to generate a seed source, and the power amplifier structure is used to output the seed source after power amplification; wherein the master oscillation structure comprises at least one group of photonic crystal structures, and / or the power amplifier structure comprises at least one group of photonic crystal structures; the photonic crystal structure is used to convert a multimode seed source into a single-mode seed source.

[0035] The semiconductor laser provided by the embodiment of the present disclosure is formed by etching a waveguide layer to form a main oscillation structure and a power amplification structure, which is conducive to improving the power of the seed laser source, and also enables the addition of an alternating current signal in the main oscillation region, thereby ensuring the signal input of the small-size seed laser source and improving the modulation bandwidth.

[0036] The technical solutions of the present disclosure will be described in detail below with reference to the semiconductor laser in some specific embodiments of the present disclosure. It should be understood that, Figure 1 The material layers, shapes and structures of the parts in the semiconductor laser shown in the specific embodiments are only exemplary to help those skilled in the art understand the technical solutions of the present disclosure, and are not intended to limit the protection scope of the present disclosure.

[0037] Figure 1 The structure of the semiconductor laser according to an embodiment of the present disclosure is schematically shown.

[0038] As Figure 1 shown, the semiconductor laser according to an embodiment of the present disclosure comprises:

[0039] A substrate 20, which can be a silicon substrate or the like.

[0040] A first confinement layer 30 located on the substrate 20 for confining the optical field.

[0041] An active layer 40 located on the first confinement layer 30 for stimulated emission of light.

[0042] A second confinement layer 50 located on the active layer 40 for confining the optical field.

[0043] A waveguide layer 60 located on the second confinement layer 50, a part of the upper surface of the waveguide layer 60 is etched to form a main oscillation structure 61, and another part is etched to form a power amplification structure 62, wherein an electrical isolation region is arranged between the main oscillation structure 61 and the power amplification structure 62, which is used to isolate the main oscillation structure 61 and the power amplification structure 62 from each other, the main oscillation structure 61 is used to generate a seed source, and the power amplification structure 62 is used to output the seed source after power amplification. Wherein, the main oscillation structure 61 comprises at least one group of photonic crystal structures 63, and the photonic crystal structure 63 is used to convert the multimode seed source into a single-mode seed source.

[0044] In the embodiment of the present disclosure, the first confinement layer 30 and the second confinement layer 50 are N-type confinement layer and P-type confinement layer respectively, by appropriately increasing or reducing the layer thickness of the confinement layer, the confinement ability of the confinement layer to the optical field can be enhanced, the light field leakage can be suppressed, the optical confinement factor can be improved and the optical loss can be reduced, thereby improving the laser output characteristics and enhancing the light field confinement ability.

[0045] As Figure 1As shown, the main oscillation structure 61 is a ridge waveguide structure with a rectangular shape, and the power amplification structure 62 is a tapered waveguide structure. The main oscillation structure 61 and the power amplification structure 62 have the same width at the end adjacent to each other, and the waveguide width of the power amplification structure 62 gradually increases in the direction away from the main oscillation structure 61.

[0046] Specifically, as shown in Figure 2 To achieve better main oscillation power amplification effect, the waveguide width W1 of the main oscillation structure 61 is 2 μm to 5 μm, preferably 3 μm, and the length L1 is 300 μm to 1000 μm, preferably 500 μm. The width W2 of the smaller end of the power amplification structure 62 is 2 μm to 5 μm, the width W3 of the other end (output end) is 15 μm to 314 μm, preferably 104 μm, and the length L2 is 1000 μm to 3000 μm, preferably 3000 μm.

[0047] In this embodiment, at least one group of photonic crystal structures 63 is arranged on the main oscillation structure 61. The photonic crystal structures 63 can also be arranged on the side surface of the main oscillation structure 61, which is used to convert the multi-mode seed source oscillated by the main oscillation structure 61 into a single-mode seed source.

[0048] Specifically, as shown in Figure 3 The etching pitch W5 of the photonic crystal structure 63 is 1 μm to 15 μm, and the etching pitch is preferably 1.1 μm. The cycle is 2 μm to 30 μm, and the cycle is preferably 9.54 μm. The etching depth of the photonic crystal structure 63 is determined according to the layer thickness of the waveguide layer 60 to be grown, and is generally 1.2 μm to 1.85 μm. The etching depth does not exceed the active layer 40.

[0049] In the embodiment of the present disclosure, the active layer 40 is composed of a gain medium material, which can be aluminum indium gallium arsenide or indium gallium arsenide phosphorus, etc.

[0050] In this embodiment, after the main oscillation structure 61, the power amplification structure 62 and the photonic crystal 63 are etched, an insulating layer 70 is grown above the main oscillation structure 61, the power amplification structure 62 and the photonic crystal 63. The insulating layer 70 is used for electrical isolation, and the layer thickness of the insulating layer 70 is preferably 300 nm.

[0051] Further, the semiconductor laser further comprises: a lower electrode layer 10 located on the lower surface of the substrate 20; and an upper electrode layer 80 located on the surface of the insulating layer 70, wherein the upper electrode layer 80 is located on the insulating layer 70 above the master oscillation structure 61 and the power amplification structure 62 respectively, so that the master oscillation structure 61 and the power amplification structure 62 are excited by independent power supplies, and the power supplied to the master oscillation structure 61 and the power amplification structure 62 can be equal or unequal. Preferably, since the loss of the power amplification structure 62 is higher than that of the master oscillation structure 61, the power supplied to the power amplification structure 62 is greater than that supplied to the master oscillation structure 61, and the power supplied to the master oscillation structure 61 can be in the order of mA, and the power supplied to the power amplification structure 62 can be in the order of A.

[0052] Wherein, the electrode window can be etched on the insulating layer 70 above the master oscillation structure 61 and the power amplification structure by ICP etching or etching method, and the upper electrode layer 80 and the lower electrode layer 10 are formed by covering the metal material on the window area of the insulating layer 70 and the lower surface of the substrate 20 respectively by magnetron sputtering or evaporation, for the injection of current. Then, the metal between the master oscillation structure 61 and the power amplification structure 62 is etched by metal etching method to form an electrically isolated region, and the electrode patterning process is completed. The material of the upper electrode layer 80 and the lower electrode layer 10 can be titanium gold and gold germanium nickel gold, etc.

[0053] In the embodiment, the etching depth of the electrically isolated region and the master oscillation structure 61 is the same as or different from the etching depth of the power amplification structure 62, and when the etching depths are the same, the mode control is mainly guided by the refractive index, and when the etching depths are different, the mode control is mainly guided by the gain. Specifically, the isolation gap W4 of the isolation region is 15 μm to 30 μm, and the isolation gap W4 is preferably 20 μm.

[0054] In order to enhance the reflection effect and transmission efficiency of the laser, the master oscillation structure 61 side of the semiconductor laser is coated with a high reflection film, and the power amplification structure 62 side (opposite to the side coated with the high reflection film) is coated with an antireflection film.

[0055] Figure 4 The spectral diagram of the semiconductor laser without the photonic crystal structure under the bias current of 110 mA of the master oscillation structure and the bias current of 3 A of the power amplification structure is schematically shown. Figure 5 The spectral diagram of the semiconductor laser without the photonic crystal structure under the bias current of 110 mA of the master oscillation structure and the bias current of 3 A of the power amplification structure is schematically shown. Figure 1 The spectral diagram of the semiconductor laser without the photonic crystal structure under the bias current of 110 mA of the master oscillation structure and the bias current of 3 A of the power amplification structure is schematically shown. Figure 4 The spectral diagram of the semiconductor laser without the photonic crystal structure under the bias current of 110 mA of the master oscillation structure and the bias current of 3 A of the power amplification structure is schematically shown. Figure 5It can be seen that the spatial frequency domain spectrum of the semiconductor laser is regulated due to the introduction of the photonic crystal structure, and a single mode seed source with a side mode suppression ratio greater than 30dB is obtained. In the actual application range, it only has one reflection peak, and the peak wavelength is near 1580nm.

[0056] Figure 6 The structure of the semiconductor laser is schematically shown. Figure 1 The output optical power of the semiconductor laser shown varies with the input current. As the input current increases, the voltage and power of the output laser increase, indicating that the semiconductor laser provided by the present disclosure can achieve better power amplification under small current excitation, and can achieve a test power reaching the order of hundreds of milliwatts.

[0057] Figure 7 And Figure 8 The structure of the semiconductor laser is schematically shown. Figure 1 The mode intensity of the semiconductor laser shown varies with the output end width W3 and length L2 of the power amplification structure. As the output end width W3 of the power amplification structure 62 increases, the mode intensity of the output laser decreases, and as the length L2 of the power amplification structure 62 increases, the mode intensity of the output laser increases as a whole, but shows a downward trend in some length sections. Figure 7 And Figure 8 It can be seen that as the output end width W3 of the power amplification structure 62 increases, the mode intensity of the output laser decreases, and as the length L2 of the power amplification structure 62 increases, the mode intensity of the output laser increases as a whole, but shows a downward trend in some length sections. Therefore, in order to ensure better mode intensity output, the output end width W3 and length L2 of the power amplification structure 62 need to be designed by trade-off to ensure high-quality and high-performance single mode seed source output.

[0058] It should be noted that the layer thickness of each material layer in the above embodiments is only an example for illustration, and can be set according to specific application scenarios. The number of groups of the photonic crystal structure 63 in the main oscillation structure 61 can be set according to specific needs, which can be 1 group, 2 groups, 3 groups, etc.

[0059] Figure 9 The structure of the semiconductor laser according to another embodiment of the present disclosure is schematically shown.

[0060] As Figure 9 shown, the structure of the semiconductor laser is different from that of the semiconductor laser shown in Figure 1 in that the photonic crystal structure 63 is arranged on the side surface of the power amplification structure 62, and the other structures are consistent with those of the semiconductor laser shown in Figure 1 .

[0061] The difference in gain loss caused by the difference in the distribution position of the photonic crystal structure 63 will cause differences in the performance of the device in power conversion efficiency, threshold, far field distribution, etc., but it can also achieve single mode seed source output and reach Figure 1Technical effects of the illustrated semiconductor laser structure.

[0062] Figure 10 A structure perspective view of a semiconductor laser according to still another embodiment of the present disclosure is schematically shown.

[0063] As shown in Figure 10 , the structure of the semiconductor laser is different from that shown in Figure 9 in that the main oscillation structure 61 is a reverse-tapered waveguide structure, the width of which adjacent to the power amplification structure 62 is equal to W2, and the width of which away from the power amplification structure 62 is greater than W2.

[0064] In this embodiment, the reverse-tapered waveguide structure 61 can suppress the spatial hole burning effect, make the photon concentration distribution in the semiconductor laser cavity more uniform, suppress the non-uniformity of the active region light gain and the waveguide along the cavity refractive index, improve the single-mode yield, and reduce the low-frequency roll-off problem in the frequency response.

[0065] In other embodiments of the present disclosure, the power amplification structure 62 can also be a butterfly waveguide structure or a combined waveguide structure or a curved waveguide or other amplification waveguide structure, which needs to meet the power amplification function.

[0066] In other embodiments of the present disclosure, at least one set of photonic crystal structure 63 can be arranged on the main oscillation structure 61 and the power amplification structure 62, and the photonic crystal structure 63 can be arranged on the upper surface or the side surface of the main oscillation structure 61 and the power amplification structure 62, and by controlling the current excitation, a single-mode seed source with different power can be realized.

[0067] The semiconductor laser provided by the embodiments of the present disclosure does not involve secondary epitaxial growth, can be realized by using ordinary contact photolithography, can realize high-power single-mode laser output, can realize high-speed signal modulation, and can greatly reduce the manufacturing cost of the semiconductor laser; by introducing the photonic crystal structure, the refractive index and gain loss distribution of the laser are regulated and controlled, the spatial light field and frequency domain spectrum of the laser are regulated and controlled, the modulated light source is optimized, and the device performance is greatly improved. The difference in gain loss caused by the difference in the distribution position of the photonic crystal structure will make the semiconductor laser different in power conversion efficiency, threshold, far field distribution and other performances.

[0068] Figure 11 A flow chart of a preparation method of a semiconductor laser according to an embodiment of the present disclosure is schematically shown, and the structure of the semiconductor laser prepared by the method steps is shown in Figure 1 , Figure 9 or Figure 10 .

[0069] As shown in Figure 11 , the preparation method of the semiconductor laser comprises:

[0070] S1, sequentially growing a first confinement layer, an active layer, a second confinement layer and a waveguide layer on a substrate.

[0071] S2, etching a part of the waveguide layer to form a main oscillation structure and etching another part to form a power amplification structure, wherein an electric isolation region is formed between the main oscillation structure and the power amplification structure, the main oscillation structure is used to generate a seed source, and the power amplification structure is used to output the seed source after power amplification.

[0072] S3, etching at least one group of photonic crystal structures on the main oscillation structure and / or the power amplification structure, the photonic crystal structures being used to convert a multimode seed source into a single-mode seed source.

[0073] Further, after the main oscillation structure, the power amplification structure and the photonic crystal are etched, an insulating layer is grown above the main oscillation structure, the power amplification structure and the photonic crystal to achieve an electric isolation effect, an electrode window is opened on the insulating layer above the main oscillation structure and the power amplification structure by ICP etching or etching method, a metal material is covered on the electrode window area of the insulating layer and the lower surface of the substrate layer by magnetron sputtering or evaporation, respectively, to form an upper electrode layer and a lower electrode layer for current injection. Finally, the metal between the main oscillation structure and the power amplification structure is etched by a metal etching method to form an electric isolation region, and the patterning of the electrode layer is completed. In addition, a high-reflection film is plated on one end surface of the main oscillation structure, and an anti-reflection film is plated on one end surface of the power amplification structure (which is arranged opposite to the end surface plated with the high-reflection film).

[0074] It should be noted that the structure of the semiconductor laser prepared by the above process in the embodiments of the present disclosure is shown in Figure 1 , Figure 9 or Figure 10 , and the specific material layers, layer thicknesses, and structures of the material layers are shown in the above embodiments, which will not be described in detail here.

[0075] The semiconductor laser provided by the embodiments of the present disclosure is simple to manufacture and has good stability, which is conducive to the power improvement of the seed laser source, and an alternating current signal can be added to the main oscillation region to ensure the signal input of the small-size seed laser source and improve the modulation bandwidth.

[0076] It should be noted that the preparation process method adopted in the embodiments of the present disclosure is not limited to the above embodiments, and can be replaced by other mature process methods in the prior art, which does not constitute a limitation of the embodiments of the present disclosure.

[0077] From the above description, it can be seen that the above embodiments of the present disclosure at least achieve the following technical effects:

[0078] 1) The semiconductor laser provided by the present disclosure forms a main oscillation structure and a power amplification structure by etching a waveguide layer, which is conducive to power improvement of a seed laser source, and also enables the addition of an alternating current signal in the main oscillation region, thereby ensuring signal input of a small-size seed laser source and being conducive to the improvement of modulation bandwidth.

[0079] 2) The semiconductor laser provided by the present disclosure sets an electrical isolation region between the main oscillation structure and the power amplification structure, thereby ensuring high-quality seed source output of the main oscillation structure under small current.

[0080] 3) The semiconductor laser provided by the present disclosure sets a photonic crystal structure on the main oscillation structure and / or the power amplification structure, the etching region size of the photonic crystal structure can be greater than 1 μm, which can effectively avoid high-cost processing technologies such as electron beam exposure, and the photonic crystal structure can be manufactured through ordinary contact photolithography, thereby reducing costs.

[0081] 4) The preparation process of the semiconductor laser provided by the present disclosure avoids multiple epitaxy, improves the robustness of the device, shortens the production time, and improves the production efficiency.

[0082] Although the present disclosure has been illustrated and described in detail in the drawings and the foregoing description, such illustration and description are to be considered illustrative or exemplary only and not restrictive. The shapes and dimensions of the components in the drawings do not reflect the true size and proportion, but only illustrate the content of the embodiments of the present disclosure. In addition, in the claims, any reference signs located between parentheses should not be construed as limiting the claims.

[0083] Those skilled in the art can understand that the features recited in various embodiments and / or claims of the present disclosure can be combined in various ranges and / or combined, even if such combinations or combinations are not explicitly recited in the present disclosure. In particular, the features recited in various embodiments and / or claims of the present disclosure can be combined in various combinations and / or combined without departing from the spirit and teachings of the present disclosure. All such combinations and / or combinations fall within the scope of the present disclosure.

[0084] Although the present disclosure has been shown and described in detail with reference to specific exemplary embodiments of the present disclosure, those skilled in the art should understand that various changes in form and detail can be made to the present disclosure without departing from the spirit and scope of the present disclosure defined by the appended claims and their equivalents. Therefore, the scope of the present disclosure should not be limited to the above-described embodiments, but should be determined only by the appended claims, and should be limited by the equivalents of the appended claims.

Claims

1. A semiconductor laser, characterized by, The application relates to a semiconductor laser device, comprising: a first confinement layer (30), an active layer (40), a second confinement layer (50) and a waveguide layer (60) sequentially grown on a substrate (20), wherein, a part of the upper surface of the waveguide layer (60) is etched to form a main oscillation structure (61), and another part is etched to form a power amplification structure (62), wherein an electric isolation area is arranged between the main oscillation structure (61) and the power amplification structure (62), the main oscillation structure (61) is used for generating a seed source, and the power amplification structure (62) is used for outputting the seed source after power amplification; wherein the main oscillation structure (61) comprises at least one group of photonic crystal structures (63), or the main oscillation structure (61) comprises at least one group of photonic crystal structures (63) and the power amplification structure (62) comprises at least one group of photonic crystal structures (63); the at least one group of photonic crystal structures (63) of the main oscillation structure (61) is used for converting a multimode seed source into a single-mode seed source; the main oscillation structure (61) is a ridge waveguide structure or an inverted taper waveguide structure; the power amplification structure (62) is a taper waveguide structure or a double-butterfly waveguide structure; and the width of the adjacent end of the main oscillation structure (61) and the power amplification structure (62) is equal.

2. The semiconductor laser of claim 1, wherein The etching pitch of the photonic crystal structure (63) is 1 ~15 , and the period is 2 ~30 .

3. The semiconductor laser of claim 1, wherein, Further comprising: an insulating layer (70) arranged on the surface of the main oscillation structure (61) and the power amplification structure (62).

4. The semiconductor laser of claim 3, wherein, Further comprising: a lower electrode layer (10) arranged on the lower surface of the substrate (20); an upper electrode layer (80) arranged on the surface of the insulating layer (70).

5. The semiconductor laser of claim 1, wherein, The main oscillation structure (61) and the power amplification structure (62) are excited by independent power sources.

6. The semiconductor laser of claim 1, wherein, Further comprising: a high-reflection film arranged on one side of the main oscillation structure (61); a transmittance-increasing film arranged on one side of the power amplification structure (62) and arranged opposite to the high-reflection film.

7. A method of manufacturing a semiconductor laser, characterized by, The application relates to a semiconductor laser device, comprising: a first confinement layer, an active layer, a second confinement layer and a waveguide layer sequentially grown on a substrate; a part of the waveguide layer is etched to form a main oscillation structure, and another part is etched to form a power amplification structure, wherein an electric isolation area is etched between the main oscillation structure and the power amplification structure, the main oscillation structure is used for generating a seed source, and the power amplification structure is used for outputting the seed source after power amplification; at least one group of photonic crystal structures is etched on the main oscillation structure, or at least one group of photonic crystal structures is etched on the main oscillation structure and at least one group of photonic crystal structures is etched on the power amplification structure, and the at least one group of photonic crystal structures of the main oscillation structure is used for converting a multimode seed source into a single-mode seed source; the main oscillation structure is a ridge waveguide structure or an inverted taper waveguide structure; the power amplification structure is a taper waveguide structure or a double-butterfly waveguide structure; and the width of the adjacent end of the main oscillation structure and the power amplification structure is equal.

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