8-12GHz Miniaturized Three-Way Synthesized 100W Solid-State Amplifier

Abstract

The present invention discloses a miniaturized 8-12GHz three-way 100W solid-state power amplifier, comprising a one-to-three power distribution unit, a first gallium nitride power amplifier chip A1, a second gallium nitride power amplifier chip A2, a third gallium nitride power amplifier chip A3, and a three-in-one power synthesis unit. The first gallium nitride power amplifier chip A1, the second gallium nitride power amplifier chip A2, and the third gallium nitride power amplifier chip A3 are connected in parallel, with their input terminals connected to the one-to-three power distribution unit and their input terminals connected to the three-in-one power synthesis unit. A multi-temperature gradient sintering process and multi-chip microassembly technology are employed in the microassembly process. A 0.1mm-thick power amplifier chip is sintered onto the top surface of a 0.5mm-thick CPC gasket, and the sintered power amplifier chip and CPC gasket are then sintered into a housing. A 0.254mm thin film substrate is sintered onto the top surface of a 1mm-thick MoCu gasket, and the sintered thin film substrate and MoCu gasket are then sintered into the housing.

Description

Technical Field

[0001] The invention belongs to the field of microwave communications, and in particular relates to an 8-12 GHz miniaturized three-way synthesis 100W solid-state power amplifier. Background Art

[0002] The solid-state power amplifier module is an important component of electronic jamming equipment. Its main function is to amplify the low-power signal from the front end and output it to the antenna end.

[0003] The synthesis method used in traditional solid-state power amplifiers is often two-way synthesis or four-way synthesis. When the power consumption and output power requirements are high, it is often the case that the two-way synthesis power is slightly insufficient and the four-way synthesis power consumption exceeds the standard.

[0004] In recent years, electronic jamming equipment has seen higher requirements for operating bandwidth, electrical performance, size, weight, and cost, while also demanding high reliability, maintainability, and replaceability. Solid-state power amplifier modules are a crucial component of missile-borne electronic jamming equipment, and developing high-performance, miniaturized, and high-power-density microwave components is crucial. Summary of the Invention

[0005] The present invention proposes an 8-12 GHz miniaturized three-way synthesis 100W solid-state power amplifier to meet the urgent needs of a certain electronic countermeasure project in terms of high performance, small size, and light weight.

[0006] The technical solution for implementing the present invention is as follows: a miniaturized 8-12 GHz three-way synthesized 100W solid-state power amplifier includes a one-to-three power distribution unit, a first gallium nitride power amplifier chip A1, a second gallium nitride power amplifier chip A2, a third gallium nitride power amplifier chip A3 and a three-in-one power synthesis unit. The first gallium nitride power amplifier chip A1, the second gallium nitride power amplifier chip A2, and the third gallium nitride power amplifier chip A3 are connected in parallel, and the input ends are all connected to the one-to-three power distribution unit, and the input ends are all connected to the three-in-one power synthesis unit.

[0007] The one-to-three power distribution unit includes a first input port, a first output port, a second output port, a third output port, a first tantalum nitride resistor R1, a second tantalum nitride resistor R2, a third tantalum nitride resistor R3, and a first microstrip line to a fifteenth microstrip line; an input signal with a power of 35dBm is transmitted from the first input port to the first microstrip line, and after passing through the second microstrip line, it is divided into two paths, the third microstrip line and the fourth microstrip line; the first tantalum nitride resistor R1 is connected in parallel between the third microstrip line and the fourth microstrip line; the third microstrip line, the fourth microstrip line and the first tantalum nitride resistor R1 form a 1:2 unequal power distribution structure; the signal power transmitted along the fourth microstrip line is twice that of the signal transmitted along the third microstrip line; the signal transmitted along the third microstrip line is transmitted to the first output port through the fifth microstrip line, the seventh microstrip line and the eighth microstrip line, and the output signal power is 29.5dBm; along the fourth microstrip line The signal transmitted along the line is divided into the tenth microstrip line and the eleventh microstrip line after passing through the sixth microstrip line and the ninth microstrip line; the second tantalum nitride resistor R2 is connected in parallel between the tenth microstrip line and the eleventh microstrip line; the signal transmitted along the tenth microstrip line is transmitted to the twelfth microstrip line, and the signal transmitted along the eleventh microstrip line is transmitted to the thirteenth microstrip line, and the third tantalum nitride resistor R3 is connected in parallel between the twelfth microstrip line and the thirteenth microstrip line; the tenth microstrip line, the eleventh microstrip line, the twelfth microstrip line, the thirteenth microstrip line, the second tantalum nitride resistor R2, and the third tantalum nitride resistor R3 form an equal power distribution structure with a ratio of 1:1; the signal transmitted along the twelfth microstrip line is transmitted to the second output port via the fourteenth microstrip line, and the output signal power is 29.5dBm; the signal transmitted along the thirteenth microstrip line is transmitted to the third output port via the fifteenth microstrip line, and the output signal power is 29.5dBm.

[0008] The three-in-one power synthesis unit includes a second input port, a third input port, a fourth input port, a fourth output port, a fourth tantalum nitride resistor R4, a fifth tantalum nitride resistor R5, a sixth tantalum nitride resistor R6, and sixteenth to thirtieth microstrip lines. After being amplified by the power amplifier chip, the three signals with a power of 46.5dBm are respectively transmitted to the second input port, the third input port, and the fourth input port of the three-in-one power synthesis unit; the signal of the second input port is transmitted to the seventeenth microstrip line via the sixteenth microstrip line; the signal of the third input port is transmitted to the twenty-third microstrip line via the nineteenth microstrip line and the twenty-first microstrip line 1; the signal of the fourth input port is transmitted to the twenty-fourth microstrip line via the twentieth microstrip line and the twenty-second microstrip line 2; the fourth tantalum nitride resistor R4 is connected in parallel between the twenty-first microstrip line 1 and the twenty-second microstrip line 2, and the fifth tantalum nitride resistor R5 is connected in parallel between the twenty-third microstrip line and the twenty-fourth microstrip line; the twenty-first microstrip line 1, the twenty-second microstrip line 2, the twenty-third microstrip line, the twenty-fourth microstrip line, the fourth tantalum nitride resistor R4, and the fifth tantalum nitride resistor R5 An equal power synthesis structure with a ratio of 1:1 is formed; the signals transmitted along the twenty-third microstrip line and the twenty-fourth microstrip line are synthesized and transmitted to the twenty-fifth microstrip line, and then transmitted to the twenty-eighth microstrip line via the twenty-sixth microstrip line; the signal transmitted along the seventeenth microstrip line is transmitted to the twenty-seventh microstrip line via the eighteenth microstrip line; the sixth tantalum nitride resistor R6 is connected in parallel between the twenty-seventh microstrip line and the twenty-eighth microstrip line; the twenty-seventh microstrip line, the twenty-eighth microstrip line and the sixth tantalum nitride resistor R6 form an unequal power synthesis structure with a ratio of 1:2, and the power of the signal transmitted along the twenty-eighth microstrip line is twice that of the signal transmitted along the twenty-seventh microstrip line; the signals transmitted along the microstrip line and the microstrip line are synthesized and transmitted to the fourth output port via the twenty-ninth microstrip line and the thirtieth microstrip line, and the output signal power is 50dBm, that is, 100W.

[0009] Compared with the prior art, the present invention has the following significant advantages:

[0010] The present invention utilizes thin-film substrate manufacturing, multi-temperature gradient sintering, and multi-chip microassembly techniques in conjunction with a three-way synthesis miniaturized design to create a solid-state power amplifier module, achieving an output power of 100W and a power consumption of 460W. Conventional solid-state power amplifier modules typically use an even number of synthesis channels. The three-way synthesis design employed in the present invention achieves an output power 20W greater than that of conventional two-way synthesis modules and a power consumption 60W less than that of conventional four-way synthesis modules. Both performance indicators meet operational requirements, making multi-way synthesis technology more flexible in solid-state power amplifier module design. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is the block diagram of the power amplifier module.

[0012] Figure 2This is a block diagram of a one-to-three power distribution unit.

[0013] Figure 3 This is the block diagram of the three-in-one power synthesis unit. DETAILED DESCRIPTION

[0014] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0015] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0016] In addition, the terms "first," "second," and so on, used in this disclosure are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features being referenced. Thus, features specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of this disclosure, "plurality" means at least two, such as two or three, unless otherwise specifically defined.

[0017] In the present invention, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "fixation" can refer to fixed connection, detachable connection, or integration; "connection" can refer to mechanical connection or electrical connection. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0018] In addition, the technical solutions between the various embodiments of the present invention can be combined with each other, but it must be based on the fact that ordinary technicians in this field can implement it. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0019] The following will further introduce the specific implementation methods, as well as the technical difficulties and inventive points of this invention in combination with this design example.

[0020] Combine Figure 1The present invention discloses an 8-12 GHz miniaturized three-way 100W solid-state power amplifier, comprising a one-to-three power distribution unit, a first gallium nitride power amplifier chip A1, a second gallium nitride power amplifier chip A2, a third gallium nitride power amplifier chip A3, and a three-in-one power synthesis unit. The first gallium nitride power amplifier chip A1, the second gallium nitride power amplifier chip A2, and the third gallium nitride power amplifier chip A3 are connected in parallel, and their input ends are all connected to the one-to-three power distribution unit, and their input ends are all connected to the three-in-one power synthesis unit.

[0021] like Figure 2 As shown, the one-to-three power splitter unit includes a first input port, a first output port, a second output port, a third output port, a first tantalum nitride resistor R1, a second tantalum nitride resistor R2, a third tantalum nitride resistor R3, and first through fifteenth microstrip lines. A 35dBm input signal is transmitted from the first input port to the first microstrip line 1. After passing through the second microstrip line 2, it is split into the third and fourth microstrip lines 3 and 4. The first tantalum nitride resistor R1 is connected in parallel between the third and fourth microstrip lines 3 and 4. The third and fourth microstrip lines 3 and 4, along with the first tantalum nitride resistor R1, form a 1:2 unequal power splitting structure. The signal power transmitted along the fourth microstrip line 4 is twice that of the signal transmitted along the third microstrip line 3. The signal transmitted along the third microstrip line 3 is transmitted to the first output port via the fifth, seventh, and eighth microstrip lines 5, 7, and 8, with an output signal power of 29.5dBm. The signal transmitted along the fourth microstrip line 4 passes through the sixth microstrip line 6 and the ninth microstrip line 9 before being split into the tenth microstrip line 10 and the eleventh microstrip line 11. A second tantalum nitride resistor R2 is connected in parallel between the tenth and eleventh microstrip lines 10 and 11. The signal transmitted along the tenth microstrip line 10 is transmitted to the twelfth microstrip line 12, and the signal transmitted along the eleventh microstrip line 11 is transmitted to the thirteenth microstrip line 13. A third tantalum nitride resistor R3 is connected in parallel between the twelfth and thirteenth microstrip lines 12 and 13. The tenth microstrip line 10, the eleventh microstrip line 11, the twelfth microstrip line 12, the thirteenth microstrip line 13, the second tantalum nitride resistor R2, and the third tantalum nitride resistor R3 form a 1:1 equal power distribution structure. The signal transmitted along the twelfth microstrip line 12 is transmitted to the second output port via the fourteenth microstrip line 14, with the output signal power being 29.5 dBm. The signal transmitted along the thirteenth microstrip line 13 is transmitted to the third output port through the fifteenth microstrip line 15 , and the output signal power is 29.5 dBm.

[0022] Figure 2The design challenge of the 1-to-3 power distribution unit lies in translating the theoretical block diagram into specific engineering parameters. The first step is to determine the selected manufacturing process. Given the module's high operating frequency, the high power levels of the components involved, and the high heat dissipation requirements, a thin-film substrate was chosen as the physical carrier for the microstrip lines. The thin-film substrate is made of beryllium oxide, with a dielectric constant of 6.4 and a thickness of 0.254 mm. Electromagnetic simulations were used to iteratively optimize the physical dimensions, resulting in the corresponding line lengths and widths for each microstrip line, as shown in Table 1. Figure 2 The tantalum nitride resistors involved are processed simultaneously on the thin film substrate, and their corresponding lengths and widths are shown in Table 2.

[0023] Table 1 Microstrip line dimensions of one-to-three power distribution unit

[0024] name Length / mm Width / mm First microstrip line 1 2.13 0.36 Second microstrip line 2 3.12 0.5 The third microstrip line 3 3.2 0.08 Fourth microstrip line 4 3.2 0.44 Fifth microstrip line 5 3.2 0.17 Sixth microstrip line 6 3.2 0.46 Seventh microstrip line 7 3.6 0.27 Eighth microstrip line 8 13.1 0.36 Ninth microstrip line 9 3.13 0.36 Tenth microstrip line 10 3.64 0.09 Eleventh microstrip line 11 3.64 0.09 The twelfth microstrip line 12 3.45 0.23 Thirteenth microstrip line 13 3.45 0.23 Fourteenth microstrip line 14 6.11 0.36 Fifteenth microstrip line 15 6.11 0.36

[0025] Table 2 Dimensions of tantalum nitride resistors in the one-to-three power distribution unit

[0026] name Length / mm Width / mm The first tantalum nitride resistor R1 0.8 0.4 The second tantalum nitride resistor R2 0.6 0.3 The third tantalum nitride resistor R3 0.8 0.16

[0027] like Figure 1 As shown, three GaN power amplifier chips, A1 through A3, model WFD080120-P47-2, operate in the 8-12 GHz frequency band and have a power gain of 17dB. The signal power reaching the input ports of GaN power amplifier chips A1 through A3 from the pre-stage stage is 29.5dBm. After being amplified by the power amplifier chips, the three signals are saturated and output, resulting in a signal power of 46.5dBm at the output ports of A1 through A3.

[0028] like Figure 3As shown, the three-in-one power combiner unit includes a second input port, a third input port, a fourth input port, a fourth output port, a fourth tantalum nitride resistor R4, a fifth tantalum nitride resistor R5, a sixth tantalum nitride resistor R6, and the sixteenth to thirtieth microstrip lines. After being amplified by the power amplifier chip, three signals with a power of 46.5 dBm are transmitted to the second, third, and fourth input ports of the three-in-one power combiner unit, respectively. The signal from the second input port is transmitted via the sixteenth microstrip line 16 to the seventeenth microstrip line 17. The signal from the third input port is transmitted via the nineteenth microstrip line 19 and the twenty-first microstrip line 21 to the twenty-third microstrip line 23. The signal from the fourth input port is transmitted via the twentieth microstrip line 20 and the twenty-second microstrip line 22 to the twenty-fourth microstrip line 24. The fourth tantalum nitride resistor R4 is connected in parallel between the twenty-first microstrip line 21 and the twenty-second microstrip line 22, and the fifth tantalum nitride resistor R5 is connected in parallel between the twenty-third microstrip line 23 and the twenty-fourth microstrip line 24. The twenty-first microstrip line 21, the twenty-second microstrip line 22, the twenty-third microstrip line 23, the twenty-fourth microstrip line 24, the fourth tantalum nitride resistor R4, and the fifth tantalum nitride resistor R5 form a 1:1 equal power combining structure. Signals transmitted along the twenty-third and twenty-fourth microstrip lines 23 and 24 are combined and transmitted to the twenty-fifth microstrip line 25, and then to the twenty-eighth microstrip line 28 via the twenty-sixth microstrip line 26. Signals transmitted along the seventeenth microstrip line 17 are transmitted to the twenty-seventh microstrip line 27 via the eighteenth microstrip line 18. The sixth tantalum nitride resistor R6 is connected in parallel between the twenty-seventh and twenty-eighth microstrip lines 27 and 28. The twenty-seventh and twenty-eighth microstrip lines 27 and 28, along with the sixth tantalum nitride resistor R6, form a 1:2 unequal power combining structure. The power of the signal transmitted along the twenty-eighth microstrip line 28 is twice that of the signal transmitted along the twenty-seventh microstrip line 27. The signals transmitted along the microstrip line 27 and the microstrip line 28 are combined and transmitted to the fourth output port through the twenty-ninth microstrip line 29 and the thirtieth microstrip line 30. The output signal power is 50 dBm, that is, 100 W.

[0029] Figure 3 The design challenge of the three-in-one power combiner unit lies in translating the theoretical block diagram into specific engineering parameters. The first step is to determine the selected processing technology. Given the module's high operating frequency, the high power levels of the components involved, and the high heat dissipation requirements, a thin-film substrate was chosen as the physical carrier for the microstrip lines. The thin-film substrate is made of beryllium oxide, with a dielectric constant of 6.4 and a thickness of 0.254 mm. Electromagnetic simulations were used to iteratively optimize the physical dimensions, resulting in the corresponding line lengths and widths for each microstrip line, as shown in Table 3. Figure 2 The tantalum nitride resistors involved are processed simultaneously on the thin film substrate, and their corresponding lengths and widths are shown in Table 4.

[0030] Table 3 Microstrip line dimensions of three-in-one power synthesis unit

[0031] name Length / mm Width / mm The sixteenth microstrip line 16 14.72 0.36 Seventeenth microstrip line 17 3.6 0.22 The eighteenth microstrip line 18 3.2 0.17 Nineteenth microstrip line 19 6.71 0.36 20th microstrip line 20 6.71 0.36 Microstrip line 21 3.69 0.22 Microstrip line 22 3.69 0.22 Microstrip line 23 3.66 0.09 Twenty-fourth microstrip line 24 3.66 0.09 Microstrip line 25 3.34 0.36 Microstrip line 26 3.2 0.46 Microstrip line 27 3.2 0.08 Microstrip line 28 3.2 0.44 Microstrip line 29 3.12 0.5 30th microstrip line 30 3.68 0.36

[0032] Table 4 Dimensions of tantalum nitride resistors for three-in-one power synthesis unit

[0033] name Length / mm Width / mm Fourth tantalum nitride resistor R4 0.8 0.16 Fifth tantalum nitride resistor R5 0.6 0.3 Sixth tantalum nitride resistor R6 0.8 0.4

[0034] The 8-12 GHz miniaturized three-way 100W solid-state amplifier described in this invention utilizes a multi-temperature gradient sintering process and multi-chip microassembly technology during the microassembly process. A 0.1mm-thick amplifier chip is sintered onto the top surface of a 0.5mm-thick CPC gasket, which is then sintered into the housing. A 0.254mm thin film substrate is sintered onto the top surface of a 1mm-thick MoCu gasket, which is then sintered into the housing.

Claims

1. A miniaturized 8-12 GHz three-way synthesized 100W solid-state power amplifier, characterized by: It includes a one-to-three power distribution unit, a first gallium nitride power amplifier chip A1, a second gallium nitride power amplifier chip A2, a third gallium nitride power amplifier chip A3, and a three-in-one power synthesis unit. The first gallium nitride power amplifier chip A1, the second gallium nitride power amplifier chip A2, and the third gallium nitride power amplifier chip A3 are connected in parallel, and the input ends are all connected to the one-to-three power distribution unit, and the input ends are all connected to the three-in-one power synthesis unit. The one-to-three power distribution unit includes a first input port, a first output port, a second output port, a third output port, a first tantalum nitride resistor R1, a second tantalum nitride resistor R2, a third tantalum nitride resistor R3, and first to fifteenth microstrip lines. An input signal with a power of 35 dBm is transmitted from the first input port to the first microstrip line, and after passing through the second microstrip line, is split into two paths, the third microstrip line and the fourth microstrip line. The first tantalum nitride resistor R1 is connected in parallel between the third and fourth microstrip lines. The third and fourth microstrip lines and the first tantalum nitride resistor R1 form a 1:2 unequal power distribution structure. The power of the signal transmitted along the fourth microstrip line is twice that of the signal transmitted along the third microstrip line. The signal transmitted along the third microstrip line is transmitted to the first output port through the fifth, seventh, and eighth microstrip lines, and the output signal power is 29.5 dBm. The signal transmitted along the fourth microstrip line is separated into two paths, namely the tenth microstrip line and the eleventh microstrip line, after passing through the sixth microstrip line and the ninth microstrip line; the second tantalum nitride resistor R2 is connected in parallel between the tenth microstrip line and the eleventh microstrip line; The signal transmitted along the tenth microstrip line is transmitted to the twelfth microstrip line, and the signal transmitted along the eleventh microstrip line is transmitted to the thirteenth microstrip line. The third tantalum nitride resistor R3 is connected in parallel between the twelfth microstrip line and the thirteenth microstrip line. The tenth microstrip line, the eleventh microstrip line, the twelfth microstrip line, the thirteenth microstrip line, the second tantalum nitride resistor R2, and the third tantalum nitride resistor R3 form an equal power distribution structure with a ratio of 1:

1. The signal transmitted along the twelfth microstrip line is transmitted to the second output port via the fourteenth microstrip line, and the output signal power is 29.5 dBm; The signal transmitted along the thirteenth microstrip line is transmitted to the third output port through the fifteenth microstrip line, and the output signal power is 29.5 dBm.

2. The 8-12 GHz miniaturized three-way synthesized 100W solid-state power amplifier according to claim 1, characterized in that: A thin film substrate is selected as the physical carrier for realizing the microstrip line. The material of the thin film substrate is beryllium oxide, with a dielectric constant of 6.4 and a thickness of 0.254 mm. Table 1 Microstrip line dimensions of one-to-three power distribution unit Table 2 Dimensions of tantalum nitride resistors in the one-to-three power distribution unit After iterative optimization of physical dimensions through electromagnetic simulation, the corresponding line lengths and line widths of each microstrip line are shown in Table 1; the tantalum nitride resistors are simultaneously processed on the thin film substrate, and their corresponding lengths and widths are shown in Table 2.

3. The 8-12 GHz miniaturized three-way synthesized 100W solid-state power amplifier according to claim 2, characterized in that: The three GaN power amplifier chips A1 to A3, model WFD080120-P47-2, operate in the 8-12 GHz frequency band with a power gain of 17 dB. The signal power reaching the input ports of the GaN power amplifier chips A1 to A3 from the front stage is 29.5 dBm. After being amplified by the power amplifier chips, the three signals are saturated and output, and the signal power at the output ports of A1 to A3 is 46.5 dBm.

4. The 8-12 GHz miniaturized three-way synthesized 100W solid-state power amplifier according to claim 3, characterized in that: The three-in-one power synthesis unit includes a second input port, a third input port, a fourth input port, a fourth output port, a fourth tantalum nitride resistor R4, a fifth tantalum nitride resistor R5, a sixth tantalum nitride resistor R6, and sixteenth to thirtieth microstrip lines; three signals with a power of 46.5 dBm after amplification by the power amplifier chip are respectively transmitted to the second input port, the third input port, and the fourth input port of the three-in-one power synthesis unit; The signal of the second input port is transmitted to the seventeenth microstrip line via the sixteenth microstrip line; the signal of the third input port is transmitted to the twenty-third microstrip line via the nineteenth microstrip line and the twenty-first microstrip line; the signal of the fourth input port is transmitted to the twenty-fourth microstrip line via the twentieth microstrip line and the twenty-second microstrip line; the fourth tantalum nitride resistor R4 is connected in parallel between the twenty-first microstrip line and the twenty-second microstrip line, and the fifth tantalum nitride resistor R5 is connected in parallel between the twenty-third microstrip line and the twenty-fourth microstrip line; the twenty-first microstrip line, the twenty-second microstrip line, the twenty-third microstrip line, the twenty-fourth microstrip line, the fourth tantalum nitride resistor R4, and the fifth tantalum nitride resistor R5 form an equal power synthesis structure with a ratio of 1:1; the signals transmitted along the twenty-third microstrip line and the twenty-fourth microstrip line are synthesized and transmitted to the twenty-fifth microstrip line, and then transmitted to the twenty-eighth microstrip line via the twenty-sixth microstrip line; The signal transmitted along the seventeenth microstrip line is transmitted to the twenty-seventh microstrip line through the eighteenth microstrip line; the sixth tantalum nitride resistor R6 is connected in parallel between the twenty-seventh microstrip line and the twenty-eighth microstrip line; the twenty-seventh microstrip line, the twenty-eighth microstrip line and the sixth tantalum nitride resistor R6 form an unequal power synthesis structure with a ratio of 1:2, and the power of the signal transmitted along the twenty-eighth microstrip line is twice that of the signal transmitted along the twenty-seventh microstrip line; the signals transmitted along the microstrip line and the microstrip line are synthesized and transmitted to the fourth output port through the twenty-ninth microstrip line and the thirtieth microstrip line, and the output signal power is 50dBm, that is, 100W.

5. The 8-12 GHz miniaturized three-way synthesized 100W solid-state power amplifier according to claim 4, characterized in that: A thin film substrate is selected as the physical carrier for realizing the microstrip line; the material of the thin film substrate is beryllium oxide, with a dielectric constant of 6.4 and a thickness of 0.254mm; Table 3 Microstrip line dimensions of three-in-one power synthesis unit Table 4 Dimensions of tantalum nitride resistors for three-in-one power synthesis unit After iterative optimization of physical dimensions through electromagnetic simulation, the corresponding line lengths and line widths of each microstrip line are shown in Table 3; the tantalum nitride resistors are simultaneously processed on the thin film substrate, and their corresponding lengths and widths are shown in Table 4.

6. The 8-12 GHz miniaturized three-way synthesized 100W solid-state power amplifier according to claim 5, characterized in that: In the micro-assembly process, multi-temperature gradient sintering process and multi-chip micro-assembly technology are used; The 0.1mm thick power amplifier chip is sintered on the upper surface of the 0.5mm thick CPC gasket, and then the sintered power amplifier chip and CPC gasket are sintered into the box body; A 0.254mm thin film substrate is sintered onto the upper surface of a 1mm thick MoCu gasket, and then the sintered thin film substrate and MoCu gasket are sintered into the box body.

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