Flexible substrate and OLED panel structure including the substrate

Abstract

The present invention provides a flexible substrate and an OLED panel structure including the substrate. The flexible substrate comprises a substrate body, which adopts an interlaced stacking structure. The substrate body comprises a substrate layer and a metal film layer, which are interlaced and stacked, with the substrate layer provided on the upper and lower surfaces of the metal film layer. By providing the metal film layer between the substrate layers, the present invention can achieve two opposing forces at the upper and lower ends of the metal film layer when irradiated by laser light, thereby suppressing curling and preventing the problem of substrate wrinkling and deformation during laser stripping, which can cause damage to the OLED device structure. In addition, the metal film layer can form a microcavity structure with the cathode layer of the OLED device structure, improving the device's luminous purity and photoelectric efficiency. The metal film layer can also improve the stripping yield rate.

Description

Technical Field

[0001] The present invention relates to a flexible substrate and an OLED panel structure comprising the substrate. Background Art

[0002] Recently, the development of organic light-emitting diodes (OLEDs) has attracted widespread attention in both research and industry. Compared to traditional LED point light sources, OLEDs are surface light sources that require no additional lighting fixtures and can be used for large-area illumination. They also offer advantages such as flexibility, environmental friendliness, light weight, low temperature, low power consumption, and eye protection. In other words, OLED lighting holds enormous potential and is expected to become the mainstream lighting technology of the future.

[0003] Currently, flexible OLED panels typically require flexible substrates and flexible packaging. Flexible substrates are typically made of polyimide (PI) or PET materials, and flexible packaging is typically performed using thin-film encapsulation technology. When manufacturing flexible OLED devices, the PI is typically coated on a rigid substrate. The process then proceeds sequentially: device preparation, thin-film encapsulation, protective layer application, and laser lift-off. Laser lift-off uses a laser to separate the flexible substrate from the rigid substrate.

[0004] It is worth pointing out that under the existing flexible substrate structure, the following problems exist in the laser lift-off process:

[0005] 1) Laser is a high-energy ray that can cause instantaneous high temperatures in the substrate during the peeling process. The thermal expansion coefficients of the flexible substrate and the inorganic encapsulation layer in contact with it are inconsistent. This can easily cause wrinkling and deformation of the flexible substrate during the actual peeling process, potentially damaging the OLED device structure. Wrinkling and deformation occur because materials expand and contract when heated, leading to lateral deformation. When a structure contains two materials with inconsistent thermal expansion coefficients, the inconsistent lateral strains of the two materials can transform into longitudinal stress, causing the structure to curl toward the material with the smaller thermal expansion coefficient.

[0006] 2) Opaque particles may exist in the transparent layer between the rigid substrate and the flexible substrate, affecting the laser incident flux at the corresponding position, which may reduce the yield of the flexible substrate due to insufficient incident energy;

[0007] 3) During the flexible packaging process, an inorganic and organic stacking structure is typically deposited sequentially on the cathode via chemical vapor deposition (CVD). Inorganic materials are typically deposited on the cathode surface of the OLED device. Due to the mismatch in thermal expansion coefficients between the deposited inorganic materials and the cathode of the OLED device, heating can easily create tiny gaps between the cathode metal and the deposited inorganic materials, thus shortening the panel's service life.

[0008] 4) The L of the microcavity structure in the existing OLED panel with microcavity effect is L = L OLED器件结构光学厚度 , that is, L only depends on the thickness of the OLED device structure. Since the microcavity effect of the resonant cavity requires a larger thickness, the larger thickness of the device will undoubtedly lead to an increase in the overall voltage of the device, which in turn affects the photoelectric performance of the device. As a result, existing OLED panels need to make a trade-off between the microcavity effect and the photoelectric performance, and it is difficult to achieve the optimal microcavity effect and photoelectric performance at the same time.

[0009] To address the above issues, Chinese patent CN201711322932.8 discloses a method for manufacturing a flexible display panel. This method constructs a sacrificial layer under a flexible substrate and implements it through laser stripping and physical cutting. However, this method does not take into account the difference in thermal expansion coefficient between the sacrificial layer itself and the rigid substrate, and the problem of flexible substrate curling still exists. Chinese patent application CN202010551936.9 discloses an OLED panel laser stripping device. This device uses vacuum adsorption on a flexible carrier to prevent the flexible substrate from curling and split the laser beam. However, once the vacuum adsorption hole is blocked, it is easy to cause poor stripping, and this will undoubtedly greatly increase the cost of the equipment.

[0010] The above issues are issues that should be considered and resolved during the design and production process of flexible substrates and OLED panel structures. Summary of the Invention

[0011] The purpose of the present invention is to provide a flexible substrate and an OLED panel structure including the substrate to solve the problem in the prior art that the substrate substrate is wrinkled and deformed when irradiated by laser, causing damage to the OLED device structure.

[0012] The technical solution of the present invention is:

[0013] A flexible substrate includes a substrate body, which adopts a staggered stacking structure. The substrate body includes a substrate layer and a metal film layer. The substrate layer and the metal film layer are staggered and stacked with each other, and the substrate layer is provided on the upper and lower surfaces of the metal film layer respectively.

[0014] Furthermore, the thermal expansion coefficient of the metal film layer is greater than that of the upper and lower substrate layers, or the thermal expansion coefficient of the metal film layer is less than that of the upper and lower substrate layers.

[0015] Furthermore, the substrate layers on the upper and lower surfaces of the metal film layer are made of materials with the same thermal expansion coefficient.

[0016] Furthermore, the metal film layer is made of a single metal or a metal alloy.

[0017] Furthermore, the thickness of the metal film layer is 50Å-30000Å.

[0018] Furthermore, the substrate layer is made of a single layer or a deposited layer of one of polyimide PI, polyethylene terephthalate PET, polyethylene naphthalate PEN, polycarbonate, epoxy resin, polyethylene and polyacrylate.

[0019] Furthermore, the transparency of the substrate body is 10%-90%.

[0020] Furthermore, an OLED device structure is provided on the substrate body, the substrate layer above the metal film layer serves as an upper substrate layer, the upper substrate layer is provided between the metal film layer and the OLED device structure, the substrate layer below the metal film layer serves as a lower substrate layer, and the metal film layer of the flexible substrate and the cathode layer of the OLED device structure jointly form a microcavity structure.

[0021] Furthermore, the sum of the optical thickness of the upper substrate layer and the optical thickness of the entire OLED device structure is half the wavelength.

[0022] An OLED panel structure includes a flexible substrate and an OLED device structure. The OLED device structure is provided on the flexible substrate. The flexible substrate adopts any one of the flexible substrates described above.

[0023] Furthermore, the OLED device structure includes an anode layer, an organic functional layer and a cathode layer, and the organic functional layer includes a hole transport layer, a light emitting layer and an electron transport layer.

[0024] Furthermore, it also includes an encapsulation layer, and an organic layer is provided between the encapsulation layer and the cathode layer of the OLED device structure.

[0025] The beneficial effects of the present invention are as follows: by disposing a metal film layer between the substrate layers, this flexible substrate and the OLED panel structure incorporating it can generate two opposing forces at the upper and lower ends of the metal film when exposed to laser irradiation, thereby suppressing curling and preventing the problem of substrate wrinkling and deformation during laser lift-off, which could damage the OLED device structure. Furthermore, the metal film layer can improve lift-off yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic structural diagram of a flexible substrate according to an embodiment of the present invention;

[0027] Figure 2This is a schematic diagram illustrating the thermal deformation of two materials with different expansion coefficients in an existing substrate;

[0028] Figure 3 Schematic diagrams illustrating the heating of a flexible substrate in an embodiment, wherein (a) illustrates the thermal deformation of a metal film layer having a greater thermal expansion coefficient than the upper and lower substrate layers, and (b) illustrates the thermal deformation of a metal film layer having a smaller thermal expansion coefficient than the upper and lower substrate layers;

[0029] Figure 4 is a schematic diagram illustrating the structure of an OLED panel in an embodiment of the present invention;

[0030] Figure 5 is a schematic diagram illustrating the microcavity structure in the embodiment;

[0031] Figure 6 is a schematic diagram illustrating reflection of a metal film layer during the laser lift-off process in an embodiment;

[0032] Figure 7 is a schematic diagram illustrating an example of an OLED device structure in the embodiment;

[0033] Figure 8 is a schematic diagram illustrating that an organic layer is provided as a buffer in an embodiment;

[0034] Wherein: 1-substrate layer, 2-metal film layer, 3-OLED device structure, 4-organic layer, 5-encapsulation layer, 6-protective layer, 7-rigid substrate;

[0035] 31 - cathode layer, 32 - electron injection layer, 33 - electron transport layer, 34 - hole blocking layer, 35 - light-emitting layer, 36 - electron blocking layer, 37 - hole transport layer, 38 - hole injection layer, 39 - anode layer. DETAILED DESCRIPTION

[0036] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0037] Example

[0038] A flexible substrate, such as Figure 1 , including a substrate body, the substrate body adopts an interlaced stacking structure, the substrate body includes a substrate layer 1 and a metal film layer 2, the substrate layer 1 and the metal film layer 2 are interlaced and stacked with each other, and the upper and lower surfaces of the metal film layer 2 are respectively provided with the substrate layer 1.

[0039] This flexible substrate, with a metal film layer 2 positioned between the substrate layer 1, can generate two opposing forces at the upper and lower ends of the metal film layer 2 when exposed to laser irradiation, thereby suppressing curling and preventing the substrate from wrinkling and deformation during the laser lift-off process, which could damage the OLED device structure 3. Furthermore, the metal film layer 2 can improve lift-off yield.

[0040] In this flexible substrate, the thermal expansion coefficient of the metal film layer 2 is greater than that of the upper and lower substrate layers 1. Figure 3 (a), or the thermal expansion coefficient of the metal film layer 2 is smaller than that of the upper and lower substrate layers 1, such as Figure 3 (b) By setting the thermal expansion coefficients of the metal film layer 2 and the upper and lower substrate layers 1, the metal film layer 2 can generate forces of equal magnitude and opposite directions when irradiated by laser, thereby achieving anti-curling, such as Figure 3 (a) and Figure 3 (b) Avoid lateral expansion of a single substance due to heat, and when two substances with inconsistent lateral deformations are combined together, they will undergo the following Figure 2 The curl problem is shown.

[0041] In this flexible substrate, the metal film layer 2 can also improve the peeling yield. The principle is as follows: the irradiation surface between the existing flexible substrate and the rigid substrate 7 often has some opaque particles, which in turn affect the irradiation of the laser and prevent the flexible substrate from being completely peeled off due to the opaque particles. Figure 6 , the metal film layer 2 can effectively reflect, so that the laser can be incident from above the particles, thereby improving the yield of laser lift-off.

[0042] In this flexible substrate, the substrate layers 1 on both sides of the metal film layer 2 are made of materials with the same thermal expansion coefficient. The substrate layers 1 on both sides of the metal film layer 2 are made of the same material. When irradiated by laser light, the stress on both sides of the metal film layer 2 is in opposite directions and of comparable magnitude, thereby suppressing the overall curling and folding of the flexible substrate. The metal film layer 2 is made of a single metal or a metal alloy. The thickness of the metal film layer 2 is 50Å-30,000Å. The thickness of the metal film layer 2 is preferably 100Å to 2,000Å, or thicker. The light transmittance of the metal film layer 2 decreases with increasing thickness. The substrate layer 1 is made of polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate, epoxy resin, polyethylene, polyacrylate, and may also be a monomer composition obtained by polymerizing diacrylate monomers and triacrylate monomers.

[0043] In this flexible substrate, the substrate body has a transparency of 10%-90%. The substrate body comprises a staggered stack of substrate layers 1 and metal film layers 2, with the total number of layers comprising at least three. An OLED device structure 3 can be disposed on the substrate body. The metal film layer 2 can form a microcavity effect with the cathode layer 31 of the OLED device structure 3.

[0044] In this flexible substrate, regardless of whether the metal film layer 2 is translucent or opaque, it reflects laser light. This not only reflects a portion of the incident laser light away from the active surface, but also protects the OLED device structure 3. Because the laser light is pulsed, with a short irradiation time and controlled by pulses, the excellent thermal conductivity of the metal in the metal film layer 2 effectively dissipates instantaneous heat, shortening the duration of stress deformation and further preventing deformation.

[0045] An OLED panel structure, such as Figure 4 , including a flexible substrate and an OLED device structure 3, the OLED device structure 3 is arranged on the flexible substrate, and the flexible substrate adopts any of the flexible substrates described above.

[0046] This type of OLED panel structure can suppress the curling of the substrate from the inside of the substrate when receiving laser radiation. Secondly, the OLED panel prepared using the flexible substrate and the OLED device structure 3 has a microcavity effect. The OLED device structure 3 is a bottom-emitting structure, which can achieve a better match between the optimal photoelectric performance and the microcavity effect. In actual production, there is no need to make a trade-off between the two.

[0047] In this OLED panel structure, the substrate layer above the metal film layer 2 serves as the upper substrate layer, which is arranged between the metal film layer 2 and the OLED device structure 3. The substrate layer below the metal film layer 2 serves as the lower substrate layer. The metal film layer 2 of the flexible substrate and the cathode layer 31 of the OLED device structure 3 together form a microcavity structure. The OLED light-emitting device structure is prepared on the flexible substrate, using the metal film layer 2 in the substrate body and the emission cathode layer 31 of the OLED device structure 3, as shown in FIG. Figure 5 , to achieve the microcavity effect. The specific structure can be described as a metal surface with a high reflection coefficient and a semi-transparent metal surface, where multiple beams of light interfere with each other. By achieving the microcavity effect, the color purity and photoelectric efficiency of the device can be improved.

[0048] In this OLED panel structure, the flexible substrate and the cathode layer 31 of the OLED device structure 3 form a microcavity effect. Compared with the existing OLED resonant cavity L=L OLED器件结构光学厚度 In comparison, in the microcavity effect of the resonant cavity of this OLED panel structure, the overall cavity length of the resonant cavity is L=L 上衬底层光学厚度 +L OLED器件结构光学厚度, that is, the overall cavity length of the resonant cavity is the sum of the optical thickness of the upper substrate layer of the flexible substrate and the optical thickness of the OLED device structure 3. In this way, the OLED panel structure of the embodiment can achieve the matching of optimal photoelectric performance and optimal microcavity effect. The microcavity effect of the resonant cavity narrows the spectral half-maximum width of the OLED device and improves the light purity of the device.

[0049] The OLED panel structure of the embodiment can achieve the best photoelectric performance and the best matching of the microcavity effect. The principle is as follows: the spectral intensity of the light emitted by the device with the microcavity effect is (λ) :

[0050] Among them, R h and R f are the reflection coefficients of the semi-transparent film and the cathode layer 31 emission film, respectively; L1 is the optical length from the light-emitting layer 35 of the OLED device structure 3 to the cathode layer 31 reflection film; L is the optical length of the cavity, which is the sum of the optical thickness of the upper substrate layer of the flexible substrate and the optical thickness of the OLED device structure 3; I 0(λ) is the spectral intensity in free space, and λ refers to the wavelength of the emitted light. Since the cathode layer 31 in the OLED device structure acts as an emission film, and the metal film layer 2 in the flexible substrate acts as a semi-transparent film, the spectral intensity I (λ) It is also related to the reflectivity of the metal film layer 2 and the cathode layer 31 of the OLED device. The specific value of the reflectivity depends on the wavelength of the emitted light and the material of the emission layer. When optimizing the device, it can be defaulted to a constant, and the above formula can be simplified to: Among them, C1, C2, and C3 are all constants.

[0051] In order to make the spectral intensity of the light emitted by the microcavity effect device I (λ) By taking the maximum value, it can be calculated that the optical length L1 from the light-emitting layer 35 of the OLED device structure 3 to the reflective film of the cathode layer 31 is optimally one-quarter wavelength, and the optical length L of the cavity is half wavelength. It can be obtained that the sum of the optical thickness of the upper substrate layer and the optical thickness of the entire OLED device structure is half wavelength, which can achieve the matching of optimal photoelectric performance and optimal microcavity effect.

[0052] Furthermore, in this OLED panel structure, the optical length L of the cavity includes the optical thickness of the upper substrate layer of the flexible substrate and the optical thickness of the OLED device structure 3. When designing the device structure, the optical length L1 of the distance between the light-emitting layer 35 of the OLED device structure 3 and the reflective film of the cathode layer 31 can be set first. Then, the carrier balance in the device can be optimized to optimize the hole thickness. The thickness of the upper substrate layer between the metal film layer 2 and the anode layer 39 of the OLED device structure 3 is determined. Ultimately, the sum of the optical thickness of the upper substrate layer and the overall optical thickness of the OLED device structure 3 is determined to be half the wavelength, thereby achieving optimal device performance and the optimal microcavity effect.

[0053] Furthermore, because the semi-transparent and OLED devices on the substrate are processed separately, the overall operating voltage of the OLED device structure remains unchanged while achieving the microcavity effect. The OLED device structure of the embodiment is a bottom-emitting device, capable of achieving the microcavity effect of a bottom-emitting device, resolving the commonly held issue of the difficulty in achieving a significant microcavity effect in bottom-emitting devices in existing OLED panels.

[0054] In this OLED panel structure, the OLED device structure 3 includes an anode layer 39, an organic functional layer and a cathode layer 31. The organic functional layer includes a hole transport layer 37, a light emitting layer 35 and an electron transport layer 33. The organic functional layer also includes one or more of a hole injection layer 38, an electron blocking layer 36, a hole blocking layer 34 and an electron injection layer 32, such as Figure 7 .

[0055] The OLED panel structure further includes an encapsulation layer 5, and an organic layer 4 is provided between the encapsulation layer 5 and the cathode layer 31 of the OLED device structure 3. Figure 8 The organic layer 4 acts as a buffer, separating the cathode of the OLED device structure 3 from the inorganic layer of the encapsulation layer 5. This prevents instability caused by microscopic gaps due to thermal expansion mismatches between the cathode and the adjacent inorganic materials during heating. The organic layer 4 fills these microscopic gaps, improving the overall stability of the device. The material for the organic layer 4 can be either an OLED organic functional layer material or a polymer. The material for the organic layer 4 can be formed by thermal evaporation or PECVD coating, or by spraying or slit coating with a doctor blade.

[0056] In this type of OLED panel structure, the flexible substrate can prevent curling. This is mainly achieved by providing a stress release method. Stress release mainly includes two aspects. The first is to insert a metal film layer 2 into the flexible substrate material, so that during the laser peeling stage, the stress of the flexible substrate as a whole is released. Under the conditions of heat or laser irradiation, two stresses in opposite directions are formed above and below the organic layer 4 and the metal film layer 2, thereby suppressing the curling and folding of the OLED panel. The other is to insert an organic layer 4 into the cathode layer 31 of the OLED device structure 3 and the adjacent encapsulation inorganic layer, thereby releasing the stress of the cathode layer 31 of the OLED device structure 3 and the adjacent encapsulation layer 5 inorganic layer. The OLED device structure 3 and the flexible substrate structure can also form a microcavity. By adjusting the thickness of the metal film layer 2 and the OLED device structure 3, the optimal OLED optoelectronic performance and the optimal resonant cavity length can be achieved.

[0057] In this OLED panel structure, the OLED device structure 3 can be either a top-emitting device or a bottom-emitting device. The light-emitting surface of the OLED device structure 3 can match the structure of the flexible substrate. The flexible substrate can be a translucent substrate, and the transparency of the flexible substrate can be adjusted based on the selection of the flexible substrate material and the inorganic metal interlayer material, as well as the process thickness.

[0058] In this OLED panel structure, an OLED device structure 3 is provided on a flexible substrate, an encapsulation layer 5 is provided on the OLED device structure 3, and a protective layer 6 is provided on the encapsulation layer 5. The flexible substrate employs a multi-layer staggered stacking structure, with at least three layers, namely, a stacking structure of flexible material, metal layer, and flexible material. The metal film layer 2 in this flexible substrate is deposited using magnetron sputtering, ion beam sputtering, electron beam evaporation, or thermal evaporation. When irradiated by laser light, the strain stress in the substrate expands or contracts toward the center.

[0059] In this OLED panel structure, the metal film layer 2 of the flexible substrate and the cathode layer 31 of the OLED device structure 3 jointly form a microcavity structure. The metal film layer 2 can work together with the cathode layer 31 of the OLED device structure 3 to improve the external quantum efficiency of the device as a whole, thereby improving the optoelectronic performance of the panel. The improvement in external quantum efficiency is achieved by using the OLED device structure 3 as a bottom-emitting device. When the metal film layer 2 is translucent, the translucent metal film layer 2 and the light-emitting surface of the cathode layer 31 of the OLED device structure 3 form a microcavity structure, thereby achieving a redistribution of the photon density of different energy states, that is, multi-beam interference. By adjusting the width of the cavity, the characteristic wavelength of the cavity can be matched with the emission wavelength of the OLED device, achieving a significant improvement in the panel's luminous purity and external quantum efficiency.

[0060] In this OLED panel structure, the cavity length of the resonant cavity of the microcavity structure can be collaboratively modulated by the thickness of the OLED device itself and the flexible film layer between the metal film layer 2 and the OLED device; in this way, compared with the traditional microcavity, the cavity length control method of the microcavity structure is more free, and the adjustment of the cavity length of the microcavity structure can be achieved on the basis of the optimal OLED device by adjusting the optical thickness of the upper substrate layer to achieve the optimal OLED device and the optimal cavity width.

[0061] Compared with the existing substrates that only serve as substrates, the flexible substrate in the embodiment can match the OLED device structure to achieve the microcavity effect. Compared with the current use of translucent cathodes and opaque anodes to achieve the microcavity effect, in the OLED panel structure of the embodiment, the two levels of the microcavity structure are the cathode layer 31 of the OLED device structure and the upper substrate layer in the flexible substrate as translucent layers, thereby achieving the optimal match between the microcavity effect and the optoelectronic performance. The existing microcavity effect usually exists in OLED top-emitting devices, that is, it is mostly found in displays. The reason is that there is a translucent cathode in the top-emitting device, while bottom-emitting panels are rarely reported. The flexible substrate in the embodiment and the OLED panel structure containing the substrate can achieve an effective microcavity effect of the bottom-emitting device, increasing the application scenarios of this effect.

[0062] This flexible substrate and the OLED panel structure including the substrate can achieve the microcavity effect without affecting the internal structure of the device and damaging the OLED device. At the same time, the microcavity effect can be achieved without increasing the device voltage.

[0063] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A flexible substrate, comprising a substrate body, characterized in that: The substrate body adopts a staggered stacking structure, and the substrate body includes a substrate layer and a metal film layer, the substrate layer and the metal film layer are staggered and stacked with each other, and the upper and lower surfaces of the metal film layer are respectively provided with the substrate layer; The thermal expansion coefficient of the metal film layer is greater than that of the upper and lower substrate layers, or the thermal expansion coefficient of the metal film layer is less than that of the upper and lower substrate layers; The substrate layers on the upper and lower sides of the metal film layer are made of materials with the same thermal expansion coefficient.

2. The flexible substrate according to claim 1, wherein: The metal film layer is made of a single metal or a metal alloy.

3. The flexible substrate according to claim 1, wherein: The thickness of the metal film layer is 50Å-30000Å.

4. The flexible substrate according to claim 1, wherein: The substrate layer is made of a single layer or a deposited layer of one of polyimide PI, polyethylene terephthalate PET, polyethylene naphthalate PEN, polycarbonate, epoxy resin, polyethylene and polyacrylate.

5. The flexible substrate according to claim 1, wherein: The transparency of the substrate body is 10%-90%.

6. An OLED panel structure comprising a flexible substrate and an OLED device structure, wherein the OLED device structure is disposed on the flexible substrate, characterized in that: The flexible substrate adopts the flexible substrate according to any one of claims 1 to 5.

7. The OLED panel structure according to claim 6, wherein: The substrate layer above the metal film layer serves as an upper substrate layer, which is arranged between the metal film layer and the OLED device structure. The substrate layer below the metal film layer serves as a lower substrate layer. The metal film layer of the flexible substrate and the cathode layer of the OLED device structure together form a microcavity structure.

8. The OLED panel structure according to claim 6, wherein: The sum of the optical thickness of the upper substrate layer and the optical thickness of the entire OLED device structure is half a wavelength.

9. The OLED panel structure according to claim 6, wherein: The OLED device structure includes an anode layer, an organic functional layer and a cathode layer. The organic functional layer includes a hole transport layer, a light-emitting layer and an electron transport layer.

10. The OLED panel structure according to claim 6, wherein: It also includes an encapsulation layer, and an organic layer is provided between the encapsulation layer and the cathode layer of the OLED device structure.

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