Device and method for preparing nano-scale TiN films on inner and outer walls of radio frequency ceramic dielectric windows

Abstract

The present invention discloses a device and method for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window, comprising a vacuum chamber, a shell, a primary rotating assembly and a secondary rotating assembly, wherein the primary rotating assembly and the secondary rotating assembly are both arranged at the bottom of the shell, and the secondary rotating assembly is arranged at the outer ring of the primary rotating assembly, and a transmission unit comprises a support assembly, a pneumatic assembly and a coating assembly, wherein the pneumatic assembly is arranged through the top of the support assembly, and the coating assembly is arranged through the bottom of the support assembly. The device of the present invention utilizes an external target to coat the outer wall of the ceramic dielectric window, and adopts a coaxial cylindrical target to realize the coating of the inner wall of the ceramic dielectric window. The reciprocating motion of the coaxial cylindrical target is realized by adding a pneumatic device, thereby ensuring the uniformity of the film on the inner wall of the ceramic dielectric window. In addition, the preparation method adopted by the present invention has a wide range of applications, saves costs and has better effects.

Description

Technical Field

[0001] The invention relates to the technical field of TiN film preparation, in particular to a device and a method for preparing nano-scale TiN films on inner and outer walls of a radio frequency ceramic dielectric window. Background Art

[0002] The RF ceramic dielectric window is one of the key components of the high-power coupler. In order to suppress the secondary electron yield of the ceramic dielectric window, it is necessary to coat the inner and outer surfaces of the ceramic window with a dense and uniform TiN film of 10-15 nanometers thickness to increase the flashover breakdown threshold, thereby improving the insulation performance of the ceramic dielectric surface. Italian researcher Walid KAABI completed the preparation of the TiN film on the inner and outer walls of the ceramic dielectric window by adding a special fixture to the magnetron sputtering equipment, but this method is difficult to control the uniformity of the TiN film on the inner wall of the ceramic dielectric window with a slender inner hole, which greatly reduces the suppression effect. At present, there is no special preparation device for the preparation of nano-scale TiN films on the inner and outer walls of ceramic dielectric windows in China. Summary of the invention

[0003] The purpose of this section is to summarize some aspects of embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the specification abstract and the invention title of this application to avoid blurring the purpose of this section, the specification abstract and the invention title, and such simplifications or omissions cannot be used to limit the scope of the present invention.

[0004] In view of the above problems and / or the problems existing in the existing apparatus for preparing nano-scale TiN films on the inner and outer walls of radio frequency ceramic dielectric windows, the present invention is proposed.

[0005] Therefore, the problem to be solved by the present invention is how to provide a device for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions: a device for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window, which includes a vacuum chamber, a shell, a primary rotating assembly and a secondary rotating assembly, wherein the primary rotating assembly and the secondary rotating assembly are both arranged at the bottom of the shell, and the secondary rotating assembly is arranged at the outer ring of the primary rotating assembly.

[0007] The transmission unit comprises a support assembly, a pneumatic assembly and a coating assembly, wherein the pneumatic assembly is disposed through the top of the support assembly, and the coating assembly is disposed through the bottom of the support assembly.

[0008] As a preferred solution of the device for preparing nano-scale TiN films on the inner and outer walls of the RF ceramic dielectric window described in the present invention, the coating assembly includes an outer target, a coaxial cylindrical target and a bellows, the outer target is arranged around the shell, and the bellows is connected to the coaxial cylindrical target.

[0009] The external targets include a first external target, a second external target, a third external target and a fourth external target.

[0010] As a preferred solution of the device for preparing nano-scale TiN films on the inner and outer walls of the radio frequency ceramic dielectric window described in the present invention, the support assembly includes a large support plate, a large support rod, a small support plate, a small support rod, a top support plate and a bottom support plate, the bottom support plate is connected to the top of the vacuum chamber, the large support rod is vertically penetrated by the top support plate, the large support plate and the bottom support plate, and the small support plate is connected to the large support plate through the small support rod.

[0011] As a preferred solution of the device for preparing nano-scale TiN films on the inner and outer walls of the RF ceramic dielectric window described in the present invention, the pneumatic component includes a cylinder and a piston rod; the cylinder is connected to the piston rod, and the piston rod is connected to the small support plate through a nut.

[0012] As a preferred solution of the device for preparing nano-scale TiN films on the inner and outer walls of the radio frequency ceramic dielectric window described in the present invention, the shell includes a vacuum chamber cover, a vacuum chamber base rotating part, a rotating shaft and a handle, the vacuum chamber cover is arranged at the bottom of the bottom support plate, the rotating shaft is arranged at the center of the vacuum chamber base rotating part, and the handle is arranged on the vacuum chamber cover.

[0013] As a preferred solution of the device for preparing nano-scale TiN films on the inner and outer walls of the RF ceramic dielectric window described in the present invention, the vacuum chamber also includes a ball, which is arranged in a first groove in the first-level rotating component and a second groove in the second-level rotating component, and a workpiece holder is arranged on the ball in the first groove, and a shielding cover is arranged on the ball in the second groove, and a window is arranged on the shielding cover.

[0014] As a preferred solution of the device for preparing nano-scale TiN films on the inner and outer walls of the radio frequency ceramic dielectric window described in the present invention, the coaxial cylindrical target includes a valve, a water cooling channel, a water conduit, a target sleeve, a yoke and a magnet, the valve is arranged at the top of the coaxial cylindrical target, the water cooling channel is arranged in the water conduit, the target sleeve is arranged at the bottom of the coaxial cylindrical target, and the magnet is arranged between the yoke and the target sleeve.

[0015] One of the beneficial effects of the present invention is: using an external target to coat the outer wall of the ceramic dielectric window, using a coaxial cylindrical target to coat the inner wall of the ceramic dielectric window, and adding a pneumatic device to achieve reciprocating motion of the coaxial cylindrical target to ensure the uniformity of the film on the inner wall of the ceramic dielectric window.

[0016] Another object of the present invention is to provide a method for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window, so that the present invention can be used to prepare films on the inner and outer walls of other types of ceramic dielectric windows, and can also be used to prepare films on the surfaces of other sleeve-type parts. By changing the material of the target, the patented equipment can be used to prepare films of different materials.

[0017] As a preferred solution of the method for preparing the nano-scale TiN film on the inner and outer walls of the radio frequency ceramic dielectric window of the present invention, wherein: the vacuum chamber cover is opened by a handle, and the shielding cover is placed on the ball in the second groove so that the window is aligned with the outer target;

[0018] Place the workpiece on the rotating part of the vacuum chamber base and close the vacuum chamber cover;

[0019] Open the mechanical pump and the front stage valve, and start the molecular pump;

[0020] Close the front stage valve, start sputtering of TiN film, and complete the preparation of the outer wall film.

[0021] As a preferred solution of the method for preparing the nano-scale TiN film on the inner and outer walls of the radio frequency ceramic dielectric window of the present invention, the water cooling channel of the coaxial cylindrical target is opened, the pneumatic assembly is opened, and the coaxial cylindrical target pressing bellows is driven to move into the inner hole of the ceramic dielectric window part in the vacuum chamber;

[0022] Close the pneumatic components, open the mechanical pump and the front stage valve, and start the molecular pump;

[0023] Close the front valve, open the main valve, fill in Ar gas and N2 gas, and adjust the gas flow;

[0024] Turn on the pneumatic assembly to make the coaxial cylindrical target reciprocate up and down in the inner hole of the ceramic dielectric window part, and turn on the thin film sputtering switch;

[0025] The pneumatic assembly is turned on, so that the coaxial cylindrical target is moved out of the inner hole of the ceramic medium window part under the action of the piston rod, thereby completing the preparation of the inner hole film.

[0026] As a preferred solution of the method for preparing the nano-scale TiN film on the inner and outer walls of the radio frequency ceramic dielectric window of the present invention, the rotation speed of the molecular pump is 2500r / min, and the working pressure is less than 10E-3Pa.

[0027] Another beneficial effect of the present invention is that it has a wide range of applications and is easy to operate, and can also be applied to parts that require other coatings to be plated on the inner and outer surfaces. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them:

[0029] Figure 1 It is a schematic diagram of a device for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window of the present invention.

[0030] Figure 2 for Figure 1 Take a top view at the AA position.

[0031] Figure 3 Schematic diagram of the structure of the coaxial cylindrical target.

[0032] Figure 4 This is the surface micromorphology of the TiN film on the RF ceramic dielectric window under a scanning electron microscope.

[0033] Figure 5 The thickness of the TiN film on the RF ceramic dielectric window was measured using an optical ellipsometer.

[0034] Figure 6 The XPS curve is measured by X-ray photoelectron spectrometer.

[0035] Figure 7 A schematic diagram of the overall scheme. DETAILED DESCRIPTION

[0036] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0037] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0038] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0039] Example 1

[0040] Reference Figure 1 and Figure 2 , which is the first embodiment of the present invention, provides a device for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window, including a vacuum chamber 100, which includes a shell 101, a primary rotating assembly 102 and a secondary rotating assembly 103, the primary rotating assembly 102 and the secondary rotating assembly 103 are both arranged at the bottom of the shell 101, and the secondary rotating assembly 103 is arranged on the outer ring of the primary rotating assembly 102.

[0041] Specifically, the transmission unit 200 includes a support assembly 201 , a pneumatic assembly 202 and a coating assembly 203 . The pneumatic assembly 202 is disposed through the top of the support assembly 201 , and the coating assembly 203 is disposed through the bottom of the support assembly 201 .

[0042] Furthermore, the present invention is mainly composed of a vacuum chamber 100 and a transmission unit 200. The transmission unit 200 is arranged at the top of the vacuum chamber 100. The primary rotating assembly 102 is used to place samples that need to be plated with the furnace for performance index testing. The secondary rotating assembly 103 is arranged on the outer ring of the primary rotating assembly 102, and rotates coaxially with the primary rotating assembly 102. Both are arranged at the bottom of the housing 101, so the two rotate synchronously when rotating.

[0043] Furthermore, the transmission unit 200 is mainly composed of a support assembly 201, a pneumatic assembly 202 and a coating assembly 203. The pneumatic assembly 202 can drive the coaxial cylindrical target 203b in the coating assembly 203 to reciprocate along the inner hole of the ceramic medium window to coat the sample to be coated.

[0044] Example 2

[0045] Reference Figure 1 to Figure 3 , which is the second embodiment of the present invention, and is different from the first embodiment in that it also includes a coating component 203, which includes an outer target 203a, a coaxial cylindrical target 203b and a bellows 203c, the outer target 203a is arranged around the shell 101, and the bellows 203c is connected to the coaxial cylindrical target 203b.

[0046] Specifically, the outer targets 203a include a first outer target 203a-1, a second outer target 203a-2, a third outer target 203a-3 and a fourth outer target 203a-4.

[0047] Furthermore, there are four outer targets 203a, evenly distributed on the vacuum chamber 100, for coating the outer wall of the ceramic dielectric window. Under the action of the pneumatic assembly 202, the coaxial cylindrical target 203b presses the bellows 203c to move into the part hole of the ceramic dielectric window in the vacuum chamber 100 to coat the inner wall of the ceramic dielectric window.

[0048] Specifically, the support assembly 201 includes a large support plate 201a, a large support rod 201b, a small support plate 201c, a small support rod 201d, a top support plate 201e and a bottom support plate 201f. The bottom support plate 201f is connected to the top of the vacuum chamber 100, and the large support rod 201b is vertically arranged on the top support plate 201e, the large support plate 201a and the bottom support plate 201f. The small support plate 201c is connected to the large support plate 201a through the small support rod 201d.

[0049] Furthermore, the support assembly 201 is composed from bottom to top of: a bottom support plate 201f (fixedly connected to the top of the vacuum chamber 100) - a large support plate 201a - a top support plate 201f, and the three are connected by a large support rod 201b, while the small support plate 201c is connected to the large support plate 201a through a small support rod 201d, and the connection method is screw-nut cooperation.

[0050] Specifically, the pneumatic assembly 202 includes a cylinder 202a and a piston rod 202b; the cylinder 202a is connected to the piston rod 202b, and the piston rod 202b is connected to the small support plate 201c through a nut.

[0051] Specifically, the shell 101 includes a vacuum chamber cover 101a, a vacuum chamber base rotating portion 101b, a rotating shaft 101c and a handle 101d. The vacuum chamber cover 101a is arranged at the bottom of the bottom support plate 201f, the rotating shaft 101c is arranged at the center of the vacuum chamber base rotating portion 101b, and the handle 101d is arranged on the vacuum chamber cover 101a.

[0052] Furthermore, a primary rotating assembly 102 and a secondary rotating assembly 103 are provided inside the shell 101, and both are provided on the vacuum chamber base rotating portion 101b at the bottom of the shell 101. The center of the vacuum chamber base rotating portion 101b is driven by a driving motor to rotate through the interference fit of the rotating shaft 101c, and drives the primary rotating assembly 102 and the secondary rotating assembly 103 to rotate.

[0053] Specifically, the vacuum chamber 100 also includes a ball 104, which is arranged in a first groove 102a in the first rotating component 102 and a second groove 103a in the second rotating component 103, and a workpiece holder 102b is arranged on the ball 104 in the first groove 102a, and a shielding cover 103b is arranged on the ball 104 in the second groove 103a, and a window 103c is arranged on the shielding cover 103b.

[0054] Furthermore, the workpiece holder 102b is disposed in the first groove 102a and above the ball bearing 104 in the groove. Similarly, the shielding cover 103b is disposed in the second groove 103a and above the ball bearing 104 in the groove. When sputtering a thin film, the window 103c is aligned with the sputtering external target 203a, and the arcing condition in the vacuum chamber can also be observed through the window 103c.

[0055] It should be noted that the diameter of the ball 104 can be selected according to the size of the first groove 102a and the second groove 103a.

[0056] Specifically, the coaxial cylindrical target 203b includes a valve 203b-1, a water cooling channel 203b-2, a water pipe 203b-3, a target sleeve 203b-4, a yoke 203b-5 and a magnet 203b-6. The valve 203b-1 is arranged at the top of the coaxial cylindrical target 203b, the water cooling channel 203b-2 is arranged in the water pipe 203b-3, the target sleeve 203b-4 is arranged at the bottom of the coaxial cylindrical target 203b, and the magnet 203b-6 is arranged between the yoke 203b-5 and the target sleeve 203b-4.

[0057] Furthermore, during the sputtering process, the coaxial cylindrical target 203b reciprocates along the inner hole of the ceramic dielectric window under the action of the cylinder 202a. At the same time, driven by the micro motor, the water pipe 203b-3 drives the yoke 203b-5 and the magnet 203b-6 to rotate in the target sleeve 203b-4, so that the target material maintains magnetic field consistency during the sputtering process, thereby achieving uniform sputtering on the target surface, improving the utilization of the target material, and making the TiN film uniformly coated on the inner hole surface, ensuring the preparation quality of nano-thin films on the surface of similar parts such as ceramic dielectric windows.

[0058] In summary, the pneumatic assembly 202 realizes the reciprocating motion of the coaxial cylindrical target 203b, thereby ensuring the uniformity of the inner wall film, especially the uniformity of the nanometer thickness film. This structure can not only ensure the film preparation of the inner wall of small parts with inner holes, but also ensure the preparation quality of nanometer thickness films.

[0059] Example 3

[0060] Reference Figure 1 to Figure 6 , which is the third embodiment of the present invention, and is different from the first two embodiments in that: this embodiment provides a method for preparing nano-scale TiN thin films on the inner and outer walls of a radio frequency ceramic dielectric window. The method is mainly divided into two parts: coating the outer wall of the ceramic dielectric window and coating the inner wall of the ceramic dielectric window.

[0061] First, when coating the outer wall of the ceramic dielectric window, the following steps are performed:

[0062] S1 opens the vacuum chamber cover 101a through the handle 101d, places the shielding cover 103b on the ball 104 in the second groove 103a, and aligns the window 103c with the outer target 203a;

[0063] S2: placing the workpiece on the vacuum chamber base rotating part 101b and closing the vacuum chamber cover 101a;

[0064] S3 opens the mechanical pump and the front stage valve, and starts the molecular pump;

[0065] S3 closes the front stage valve, starts sputtering of TiN film, and completes the preparation of the outer wall film.

[0066] Specifically, a ceramic dielectric window with an inner hole diameter of 50 mm, an outer wall diameter of 55 mm, a height of 35 mm and a TiN film with a thickness of 10-15 nanometers is taken as an example.

[0067] Preferably, the vacuum chamber cover 101a is opened by the handle 101d, the shielding cover 103b is placed on the ball 104 in the second groove 103a corresponding to the rotating part 101b of the vacuum chamber base, the window 103c on the shielding cover 103b is aligned with the TiN sputtering outer target, the workpiece is placed on the rotating part 101b of the vacuum chamber base, the vacuum chamber cover 101a is closed by the handle 101d, the mechanical pump and the front stage valve are opened, the molecular pump is started, when the speed reaches 25000r / min, the front stage valve is closed, and the main valve is opened. After 15 minutes, when the local vacuum degree reaches 10-5Pa, the TiN film sputtering is started, the sputtering time is 3s, the sputtering power switch is turned off, and the outer wall film preparation is completed.

[0068] Then, when coating the inner wall of the ceramic dielectric window, the following steps are performed:

[0069] S1 opens the water cooling channel 203b-2 of the coaxial cylindrical target 203b, opens the pneumatic assembly 202, and drives the coaxial cylindrical target 203b to press the bellows 203c to move into the inner hole of the ceramic dielectric window part in the vacuum chamber 100;

[0070] S2 closes the pneumatic assembly 202, opens the mechanical pump and the front stage valve, and starts the molecular pump;

[0071] S3 closes the front stage valve, opens the main valve, fills in Ar gas and N2 gas, and adjusts the gas flow rate;

[0072] S4: Open the pneumatic assembly 202 to make the coaxial cylindrical target 203b reciprocate up and down in the inner hole of the ceramic dielectric window part, and turn on the thin film sputtering switch;

[0073] S5: Open the pneumatic assembly 202, so that the coaxial cylindrical target 203b moves out of the inner hole of the ceramic dielectric window part under the action of the piston rod 202b, and completes the preparation of the inner hole film.

[0074] Specifically, a ceramic dielectric window with an inner hole diameter of 50 mm, an outer wall diameter of 55 mm, a height of 35 mm and a TiN film with a thickness of 10-15 nanometers is taken as an example.

[0075] Preferably, the vacuum chamber cover 101a is opened by the handle 101d, the shielding cover 103b is placed on the ball 104 in the second groove 103a corresponding to the rotating part 101b of the vacuum chamber base, the workpiece is placed on the rotating part 101b of the vacuum chamber base, the vacuum chamber cover 101a is closed by the handle 101d, the water cooling switch of the coaxial cylindrical target 203b is turned on, the water cooling system of the coaxial cylindrical target 203b starts to work, and the cooling water enters the water cooling channel 203b-2 of the coaxial cylindrical target 203b through the valve 203b-1, and flows out through the valve 203b-1 (there are two valves 203b-1, see the attached figure). The pneumatic assembly 202 switch for lowering the coaxial cylindrical target 203b is turned on, and the piston rod 202b moves downward under the action of the cylinder 202a, and then drives the coaxial cylindrical target 203b to press the bellows 203c to move into the inner hole of the ceramic dielectric window part in the vacuum chamber 100 through the small support plate 201c, the small support rod 201d and the large support plate 201a, and the pneumatic assembly 202 is closed. The mechanical pump and the front stage valve are turned on, and the molecular pump is started. When the speed reaches 25000r / min, the front stage valve is closed, and the main valve is opened. The working pressure is less than 10E-3Pa, and Ar gas and N2 gas are filled, and the gas flow rate is adjusted. After 15 minutes, when the local vacuum reaches 10E-5Pa, the vacuum requirement of sputtering coating is met. Turn on the pneumatic assembly 202 for the up and down reciprocating motion of the coaxial cylindrical target 203b, and the coaxial cylindrical target 203b reciprocates up and down in the inner hole of the ceramic dielectric window part. At this time, turn on the thin film sputtering switch of the coaxial cylindrical target 203b, the sputtering current is 1.6A, the voltage is 0.4KV, and the sputtering time is 1.4s. After sputtering, turn off the sputtering power switch, turn on the switch of the pneumatic assembly 202 for the coaxial cylindrical target 203b to rise, and the coaxial cylindrical target 203b moves out of the inner hole of the ceramic dielectric window part under the action of the piston rod 202b to complete the preparation of the inner hole film.

[0076] The surface morphology of the TiN film on the ceramic dielectric window of the device under a scanning electron microscope is shown in the figure. Figure 4 As shown, it can be seen that the deposition rate of the nano-titanium nitride film is uniform, the surface is smooth and flat, the film particles are uniform in size, the average size is 2 to 3 nm, the particles are tightly linked, the density is high, and a continuous nano-film is formed on the ceramic surface.

[0077] The thickness of TiN film on RF ceramic dielectric window measured by optical ellipsometer is as follows: Figure 5 As shown, it can be seen that the thickness of the TiN film in the frequency ceramic dielectric window is 13 to 15 nm.

[0078] The XPS curve was measured by X-ray photoelectron spectrometer, and obvious characteristic peaks appeared at 463ev and 456ev, indicating that the main component of the film was TiN film.

[0079] It should be noted that, in addition to being used for the preparation of thin films on the inner and outer walls of the above-mentioned ceramic dielectric windows, this application can also be used for the preparation of thin films on the inner and outer walls of other types of ceramic dielectric windows; it can also be used for the preparation of thin films on the surfaces of other sleeve-like parts. By changing the material of the target, the patented device can be used to prepare thin films of different materials.

[0080] Example 4

[0081] Reference Figure 1 to Figure 7 , which is the fourth embodiment of the present invention, and is different from the first three embodiments in that it also includes a system for preparing nano-scale TiN films on the inner and outer walls of a radio frequency ceramic dielectric window, which includes four units: a vacuum obtaining unit, a vacuum measuring unit, a workbench unit, and a comprehensive control unit, wherein the vacuum obtaining unit is responsible for meeting the pressure requirements of the vacuum chamber, the vacuum measuring unit is responsible for measuring the vacuum degree of the equipment, the comprehensive control unit is responsible for controlling the coating process according to the process requirements of sputtering coating, and the workbench unit is responsible for clamping the workpiece and ensuring the uniformity of the workpiece coating. The device mentioned in this application is mainly set in the workbench unit.

[0082] The vacuum acquisition system is connected to the vacuum chamber 100 through the flange of the vacuum chamber base rotating part 101b to meet the vacuum degree requirements. The vacuum measurement system is connected to the vacuum chamber 100 through the through holes on the first outer target 203a-1 and the third outer target 203a-3 to complete the measurement of the vacuum degree and temperature in the vacuum chamber 100; argon and reaction gas are connected to the vacuum chamber 100 through the through holes on the first outer target 203a-1 and the third outer target 203a-3 to achieve the input of argon and reaction gas into the vacuum chamber 100; cooling water and compressed gas are connected to the vacuum chamber 100 through the through holes on the first outer target 203a-1 and the third outer target 203a-3.

[0083] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A device for preparing nano-scale TiN thin films on the inner and outer walls of radio frequency ceramic dielectric windows, characterized in that: include, A vacuum chamber (100), comprising a shell (101), a primary rotating assembly (102) and a secondary rotating assembly (103), wherein the primary rotating assembly (102) and the secondary rotating assembly (103) are both arranged at the bottom of the shell (101), and the secondary rotating assembly (103) is arranged at the outer ring of the primary rotating assembly (102); The transmission unit (200) comprises a support assembly (201), a pneumatic assembly (202) and a coating assembly (203), wherein the pneumatic assembly (202) is disposed through the top of the support assembly (201), and the coating assembly (203) is disposed through the bottom of the support assembly (201); The coating assembly (203) comprises an outer target (203a), a coaxial cylindrical target (203b) and a bellows (203c); the outer target (203a) is arranged around the shell (101), and the bellows (203c) is connected to the coaxial cylindrical target (203b); The external targets (203a) include a first external target (203a-1), a second external target (203a-2), a third external target (203a-3) and a fourth external target (203a-4); The vacuum chamber (100) further comprises a ball (104), wherein the ball (104) is arranged in a first groove (102a) in the primary rotating component (102) and a second groove (103a) in the secondary rotating component (103), and a workpiece holder (102b) is arranged on the ball (104) in the first groove (102a), and a shielding cover (103b) is arranged on the ball (104) in the second groove (103a), and a window (103c) is arranged on the shielding cover (103b); The coaxial cylindrical target (203b) comprises a valve (203b-1), a water cooling channel (203b-2), a water conduit (203b-3), a target sleeve (203b-4), a yoke (203b-5) and a magnet (203b-6); the valve (203b-1) is arranged at the top of the coaxial cylindrical target (203b); the water cooling channel (203b-2) is arranged in the water conduit (203b-3); the target sleeve (203b-4) is arranged at the bottom of the coaxial cylindrical target (203b); and the magnet (203b-6) is arranged between the yoke (203b-5) and the target sleeve (203b-4).

2. The device for preparing nano-scale TiN thin films on inner and outer walls of radio frequency ceramic dielectric windows according to claim 1, characterized in that: The support assembly (201) comprises a large support plate (201a), a large support rod (201b), a small support plate (201c), a small support rod (201d), a top support plate (201e) and a bottom support plate (201f); the bottom support plate (201f) is connected to the top of the vacuum chamber (100); the large support rod (201b) is vertically penetrated on the top support plate (201e), the large support plate (201a) and the bottom support plate (201f); and the small support plate (201c) is connected to the large support plate (201a) via the small support rod (201d).

3. The device for preparing nano-scale TiN thin films on inner and outer walls of radio frequency ceramic dielectric windows according to claim 2, characterized in that: The pneumatic assembly (202) comprises a cylinder (202a) and a piston rod (202b); the cylinder (202a) is connected to the piston rod (202b), and the piston rod (202b) is connected to the small support plate (201c) via a nut.

4. The device for preparing nano-scale TiN thin films on inner and outer walls of radio frequency ceramic dielectric windows according to claim 3, characterized in that: The shell (101) comprises a vacuum chamber cover (101a), a vacuum chamber base rotating part (101b), a rotating shaft (101c) and a handle (101d); the vacuum chamber cover (101a) is arranged at the bottom of the bottom support plate (201f); the rotating shaft (101c) is arranged at the center of the vacuum chamber base rotating part (101b); and the handle (101d) is arranged on the vacuum chamber cover (101a).

5. A method for preparing nano-scale TiN thin films on inner and outer walls of radio frequency ceramic dielectric windows based on the device for preparing nano-scale TiN thin films on inner and outer walls of radio frequency ceramic dielectric windows according to any one of claims 1 to 4, characterized in that: The following steps are included: Opening the vacuum chamber cover (101a) through a handle (101d), placing the shielding cover (103b) on the ball (104) in the second groove (103a), and aligning the window (103c) with the outer target (203a); Placing the workpiece on the rotating part (101b) of the vacuum chamber base and closing the vacuum chamber cover (101a); Open the mechanical pump and the front stage valve, and start the molecular pump; Close the front stage valve, start sputtering of TiN film, and complete the preparation of the outer wall film; Opening the water cooling channel (203b-2) of the coaxial cylindrical target (203b), opening the pneumatic assembly (202), and driving the coaxial cylindrical target (203b) pressing bellows (203c) to move into the inner hole of the ceramic dielectric window part in the vacuum chamber (100); Close the pneumatic assembly (202), open the mechanical pump and the front stage valve, and start the molecular pump; Close the front valve, open the main valve, fill in Ar gas and N2 gas, and adjust the gas flow; Turning on the pneumatic assembly (202) to allow the coaxial cylindrical target (203b) to reciprocate up and down in the inner hole of the ceramic dielectric window part, and turning on the thin film sputtering switch; The pneumatic assembly (202) is opened, and the coaxial cylindrical target (203b) is moved out of the inner hole of the ceramic dielectric window part under the action of the piston rod (202b), thereby completing the preparation of the inner hole film.

6. The method for preparing the nano-scale TiN film on the inner and outer walls of the radio frequency ceramic dielectric window according to claim 5, characterized in that: The molecular pump has a speed of 2500r / min and a working pressure of less than 10 -3 Pa.

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