PN junction temperature measurement method, system and computer-readable storage medium

Abstract

The present invention provides a PN junction temperature measurement method, system, and computer-readable storage medium. The PN junction temperature measurement method takes into account the variation of the ideality factor with temperature. Temperature measurement can be achieved by simply integrating the forward conduction current and forward conduction voltage of the PN junction. The temperature measurement method is independent of the reverse saturation current of the PN junction and is suitable for temperature measurement under variable conduction current conditions. The sampling frequency of voltage and current signals can be reduced, the temperature measurement accuracy can be improved, and the temperature measurement accuracy is wide in scope.

Description

Technical Field

[0001] The present invention relates to the field of temperature measurement technology, and in particular to a PN junction temperature measurement method, system and computer-readable storage medium. Background Art

[0002] The current-voltage (IV) characteristic of a PN junction is temperature-dependent, making it suitable for use as a temperature sensor. Some researchers have connected a PN junction in series with a suitable resistor to achieve high-precision linearization of the PN junction's forward voltage and temperature, improving temperature measurement accuracy. Chinese patent CN104820179A employs two voltage-controlled current sources to propose a PN junction temperature measurement method that eliminates the effects of series resistance and is independent of reverse saturation current. The ideality factor of a PN junction varies at different temperatures, and this temperature-dependent change in the ideality factor poses a significant challenge to accurate temperature measurement. Relevant scholars have conducted research on PN junction temperature measurement methods, but most methods treat the ideality factor as a constant or ignore its influence when measuring temperature using the PN junction, resulting in significant temperature measurement errors. Chinese patent CN113588106A proposes a method for compensating for the difference in the intercept of the PN junction forward voltage versus temperature curve. It discloses a PN junction temperature measurement method that measures temperature by collecting the PN junction forward voltage under two constant current conditions of varying magnitudes. However, this method is not suitable for temperature measurement under variable conduction current conditions. PN junctions can be various commonly used diodes or parasitic diodes in switching transistors (such as MOSFETs). In application systems, PN junctions often experience variable currents. Therefore, it is necessary to consider PN junction temperature measurement methods that are independent of reverse saturation current and applicable to variable on-state currents to further improve temperature measurement accuracy. Summary of the Invention

[0003] In response to the above technical problems, the present invention discloses a PN junction temperature measurement method, system and computer-readable storage medium. The temperature measurement method is independent of the reverse saturation current of the PN junction and is suitable for PN junction temperature measurement under variable conduction current conditions. The method takes into account the factor that the ideal factor changes with temperature, thereby improving the temperature measurement accuracy.

[0004] To this end, the technical solution adopted in the present invention is:

[0005] A PN junction temperature measurement method, comprising:

[0006] Step S1, select a PN junction for temperature measurement, and measure the forward conduction current signal i of the PN junction at different temperatures. b And the forward conduction voltage signal v f , obtain the signal curves of forward conduction current, forward conduction voltage and time at different temperatures;

[0007] Step S2, for the signal curves of forward conduction current, forward conduction voltage and time at different temperatures, arbitrarily select two equal time periods Δt1 and Δt2, and obtain the forward conduction current signal i of the PN junction in the Δt1 time period. b1 , forward conduction voltage signal v f1 , and the forward conduction current signal i of the PN junction in the Δt2 period b2 , forward conduction voltage signal v f2 , through S V1 =∫v f1 dt、S V2 =∫v f2 dt、S I1 =∫ln(i b1 )dt、S I2 =∫ln(i b2 )dtIntegrate the forward conduction voltage and forward conduction current in the two time periods respectively, and get S V1 , S V2 , S I1 , S I2 ; Among them, S V1 Represents the integral of the PN junction forward conduction voltage during the Δt1 period, S V2 Represents the integral of the PN junction forward conduction voltage during the Δt2 period, S I1 Represents the integral of the PN junction forward current during the Δt1 period, S I2 Represents the integral of the PN junction forward current during the Δt2 period.

[0008] Step S3, using Determine the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the elementary charge constant, and T is the thermodynamic temperature;

[0009] Step S4, according to the ideal factor n at different temperatures obtained in step S3, using the data fitting method, combined with Fitting the relationship, fitting to obtain constants a, b, c, where T is the thermodynamic temperature;

[0010] Step S5, measuring the temperature using the PN junction, measuring the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtaining a signal curve of the forward conduction current, the forward conduction voltage and time;

[0011] Step S6: For the obtained signal curves of forward conduction current, forward conduction voltage and time, select a time period equal to the forward conduction current in step S2 and calculate S v11 , S v21 , S I11 , S I21 ;

[0012] Step S7, according to Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant;

[0013] Step S8, according to Calculate the actual PN junction temperature T.

[0014] Using this technical solution, steps S1-S4 measure the ideality factor of the PN junction by randomly selecting several temperatures, deriving constants a, b, and c from the fitted curve of the ideality factor versus temperature. In practical applications, once the PN junction and its test conditions are selected, the PN junction's a, b, and c values are constants and only need to be measured once. Subsequent temperature measurements using the PN junction do not require steps S1-S4. However, if the PN junction is replaced, steps S1-S4 must be repeated to derive constants a, b, and c.

[0015] As a further improvement of the present invention, the PN junction is a diode or a parasitic diode of a switch tube.

[0016] The present invention discloses a PN junction temperature measurement system, which includes:

[0017] The signal curve acquisition module of PN junction forward conduction current, forward conduction voltage and time is used to obtain the forward conduction current signal i of the selected PN junction at different temperatures. b And the forward conduction voltage signal v f , obtain the signal curves of forward conduction current, forward conduction voltage and time at different temperatures;

[0018] The integration module is used to arbitrarily select two equal time periods Δt1 and Δt2, and obtain the forward conduction current signal i of the PN junction in the Δt1 time period. b1 , forward conduction voltage signal v f1 , and the forward conduction current signal i of the PN junction in the Δt2 period b2 , forward conduction voltage signal v f2 , through S V1 =∫v f1 dt、S V2 =∫v f2 dt、S I1 =∫ln(i b1 )dt、S I2 =∫ln(i b2 )dtIntegrate the forward conduction voltage and forward conduction current in the two time periods respectively, and get S V1 , S V2 , S I1 , S I2 ;

[0019] Ideality factor calculation module for utilizing Determine the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the elementary charge constant, and T is the thermodynamic temperature;

[0020] The data fitting and constant calculation module uses the data fitting method to combine the ideal factor n at different temperatures obtained by the ideal factor calculation module. Fitting the relationship, fitting to obtain constants a, b, c, where T is the thermodynamic temperature;

[0021] a temperature measurement signal acquisition module, which uses the PN junction to measure temperature, measures the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtains a signal curve of the forward conduction current, the forward conduction voltage and time;

[0022] The temperature measurement calculation module is used to select the time period equal to the forward conduction current of Δt1 and Δt2, and calculate S v11 , S v21 , S I11 , S I21 ;

[0023] PN junction temperature calculation module, according to Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant;

[0024] according to Calculate the actual PN junction temperature T.

[0025] As a further improvement of the present invention, the PN junction is a diode or a parasitic diode of a switch tube.

[0026] The present invention discloses a computer-readable storage medium, which includes a computer program. When the computer program runs on an electronic device, the electronic device executes the PN junction temperature measurement method as described above.

[0027] The present invention discloses a PN junction temperature measuring device, comprising: a test circuit, a memory, a processor, and a computer program stored in the memory and runnable on the processor. When the processor executes the computer program, the PN junction temperature measuring method described above is implemented.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] First, the PN junction temperature measurement method of the technical solution of the present invention is adopted. This method is independent of the reverse saturation current of the PN junction and is suitable for temperature measurement under variable conduction current conditions. The temperature measurement can be achieved by integrating the forward conduction current and forward conduction voltage signals of the PN junction respectively.

[0030] Secondly, the PN junction temperature measurement method of the technical solution of the present invention realizes temperature measurement by integrating the voltage and current signals of the PN junction, which can reduce the sampling frequency of the voltage signal and the current signal.

[0031] Third, the temperature measurement method proposed in the present invention takes into account the fact that the ideality factor of the PN junction varies with temperature, and obtains constants a, b, and c related to the ideality factor through experiments, which are used to correct the temperature measurement and improve the measurement accuracy.

[0032] Fourth, the forward voltage and forward current integration time periods of the PN junction temperature measurement method proposed in the present invention can be selected according to the actual temperature measurement requirements, and the applicability is strong. At the same time, data within multiple cycles can also be selected for temperature measurement to improve detection accuracy.

[0033] Fifth, the temperature measurement method of the technical solution of the present invention is applicable to various forms of PN junctions, which can be various commonly used forms of diodes, or other forms of PN junctions such as parasitic diodes of switching tubes (such as MOSFETs), and has a wide range of applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of the forward conduction instantaneous current and forward conduction instantaneous voltage of a PN junction at a random temperature according to an embodiment of the present invention.

[0035] Figure 2 1 is a waveform diagram of the forward conduction current and forward conduction voltage of a common diode according to embodiment 1 of the present invention.

[0036] Figure 3 1 is the ideal factor of a common diode and its fitting curve in Example 1 of the present invention.

[0037] Figure 4 This is the error analysis of the temperature measurement of a common diode in Example 1 of the present invention.

[0038] Figure 5 1 is the ideality factor of the SiC Schottky diode of Example 2 of the present invention and its fitting curve.

[0039] Figure 6 This is an analysis of the temperature measurement error of the SiC Schottky diode in Example 2 of the present invention.

[0040] Figure 7 1 is the ideality factor of the parasitic diode of the SiC MOSFET of Example 3 of the present invention and its fitting curve.

[0041] Figure 8 This is an analysis of the temperature measurement error of the SiC MOSFET parasitic diode in Example 3 of the present invention.

[0042] Figure 9: is the ideal factor of the common MOSFET parasitic diode and its fitting curve in Example 4 of the present invention.

[0043] Figure 10 is the temperature measurement error of the common MOSFET parasitic diode in embodiment 4 of the present invention. DETAILED DESCRIPTION

[0044] The preferred embodiments of the present invention are described in further detail below.

[0045] To address the problems existing in the prior art, the present invention considers the variation of the ideality factor with temperature and proposes a PN junction temperature measurement method that is independent of reverse saturation current and applicable to variable conduction current conditions, thereby improving temperature measurement accuracy. Furthermore, the proposed PN junction temperature measurement method only requires integrating the forward conduction current and forward conduction voltage of the PN junction to achieve temperature measurement, resulting in a simple and easy-to-use method.

[0046] The implementation process of a PN junction temperature measurement method is as follows:

[0047] Step 1: Select a PN junction for temperature measurement. The PN junction can be a diode or a parasitic diode of a switching tube.

[0048] According to the actual use of the PN junction, the forward conduction current signal i of the PN junction at different temperatures is measured. b And the forward conduction voltage signal v f ;

[0049] Step 2: Arbitrarily select two equal time periods Δt1 and Δt2, and use S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt,S I2 =∫ln(i b2 )dtIntegrate the forward conduction voltage and forward conduction current in two time periods to obtain S V1 , S V2 , S I1 , S I2 ;

[0050] Step3: Utilize Find the ideality factor at different temperatures;

[0051] Step 4: Use the data fitting method to fit the The constants a, b, c in the fitting relationship;

[0052] Step 5: In the actual application system of the PN junction, measure its forward conduction current signal and forward conduction voltage signal to obtain the signal curve of forward conduction current, forward conduction voltage and time;

[0053] Step 6: Select the time period equal to the forward conduction current in step 2 and calculate S v11 , S v21 , S I11 , S I21 ;

[0054] Step 7: According to Calculate the value of m;

[0055] Step 8: According to Calculate the temperature of the PN junction.

[0056] The analytical reasoning process for the above implementation steps is as follows:

[0057] (1) PN junction temperature measurement method to eliminate the influence of reverse saturation current

[0058] The relationship between the forward conduction current and the forward conduction voltage of the PN junction is shown in formula (1):

[0059]

[0060] In formula (1), i b is the forward conduction current of the PN junction, I s is the reverse saturation current, k is the Boltzmann constant, q is the basic charge constant, n is the ideal factor, v f is the forward conduction voltage of the PN junction, and T is the thermodynamic temperature. Simplify equation (1) to equation (2). The schematic diagram of the forward conduction current and forward conduction voltage of the PN junction is as follows: Figure 1 As shown, in the stage of the PN junction forward conduction current change, two equal time periods Δt1 and Δt2 are selected, where the forward current and forward voltage in the Δt1 time period are respectively represented as i b1 and v f1 , the forward current and forward voltage in the Δt2 period are respectively expressed as i b2 and v f2 , then the temperature measurement derivation process of the PN junction is as follows:

[0061]

[0062]

[0063]

[0064]

[0065]

[0066]

[0067]

[0068] Let S V1 =∫v f1 dt, S V2 =∫v f2 dt, S I1 =∫ln(i b1 )dt,S I2 =∫ln(i b2 )dt, rewriting Equation (8) as Equation (9) yields the expression for temperature T as shown in Equation (10). The reverse saturation current of the PN junction is temperature-dependent. This method calculates the temperature by integrating the forward current and forward voltage of the PN junction over different time periods, eliminating the effect of the reverse saturation current on the temperature measurement.

[0069]

[0070]

[0071] (2) PN junction temperature measurement method considering the ideal factor changing with temperature

[0072] Based on formula (10), the calculation formula for the ideal factor can be derived as shown in formula (11). The ideal factor of the PN junction changes with temperature, and different types of PN junctions have different trends in temperature changes. For example, the ideal factor of the PN junction of ordinary Si-type materials decreases with increasing temperature, while the ideal factor of the PN junction of SiC type increases with increasing temperature. There are also some PN junctions whose ideal factors do not change much with temperature. The change of the ideal factor of different types of PN junctions with temperature can be expressed as an inverse relationship. Therefore, the expression of the ideal factor of the PN junction with temperature change is expressed as (12), where a, b, and c are constants related to the PN junction used for temperature measurement.

[0073] make The PN junction temperature expression (10) is rewritten as shown in equation (13). Solving equation (13) yields a quadratic equation for temperature T, as shown in equation (14). In practical applications, the solution to this equation is a positive temperature value. The positive solution of equation (14) is the temperature value measured at the PN junction. Therefore, the temperature T obtained by measuring the PN junction is shown in equation (15).

[0074]

[0075]

[0076]

[0077] aT 2 +(ac+bm)T-mc=0 (14)

[0078]

[0079] The embodiment of the present invention further discloses a PN junction temperature measurement system, which includes:

[0080] The module for acquiring the curve of PN junction forward current, forward voltage and time is used to obtain the forward current signal i of the selected PN junction at different temperatures. b And the forward conduction voltage signal v f , obtain the signal curves of forward conduction current, forward conduction voltage and time at different temperatures;

[0081] The integration module is used to arbitrarily select two equal time periods Δt1 and Δt2, and obtain the forward conduction current signal i of the PN junction in the Δt1 time period. b1 , forward conduction voltage signal v f1 , and the forward conduction current signal i of the PN junction in the Δt2 period b2 , forward conduction voltage signal v f2 , through S V1 =∫v f1 dt、S V2 =∫v f2 dt、S I1 =∫ln(i b1 )dt、S I2 =∫ln(i b2 )dtIntegrate the forward conduction voltage and forward conduction current in the two time periods respectively, and get S V1 , S V2 , S I1 , S I2 ;

[0082] Ideality factor calculation module for utilizing Determine the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the elementary charge constant, and T is the thermodynamic temperature;

[0083] The data fitting and constant calculation module uses the data fitting method to combine the ideal factor n at different temperatures obtained by the ideal factor calculation module. The constants a, b, and c are obtained by fitting, where T is the thermodynamic temperature;

[0084] a temperature measurement signal acquisition module, which uses the PN junction to measure temperature, measures the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtains a signal curve of the forward conduction current, the forward conduction voltage and time;

[0085] The temperature measurement calculation module is used to select a time period equal to Δt1 and Δt2 and calculate S v11 , S v21 , S I11 , S I21 ;

[0086] PN junction temperature calculation module, according to Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant;

[0087] according to Calculate the actual PN junction temperature T.

[0088] The PN junction is a diode or a parasitic diode of a switch tube.

[0089] An embodiment of the present invention further discloses a computer-readable storage medium, which includes a computer program. When the computer program runs on an electronic device, the electronic device executes the PN junction temperature measurement method described above.

[0090] An embodiment of the present invention further discloses a PN junction temperature measurement device, comprising: a test circuit, a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the PN junction temperature measurement method described above is implemented.

[0091] The above PN junction temperature measurement method is applied to perform actual temperature measurement verification.

[0092] Example 1

[0093] Example of ordinary diode temperature measurement.

[0094] Using the above PN junction temperature measurement method, a common diode of model MUR3060WT is randomly selected for temperature measurement. The forward current and forward voltage waveforms added to the diode are as follows: Figure 2 As shown, the frequency of the added current signal is 5kHz. According to the forward voltage and forward current of the diode at different temperatures, the ideal factor and its fitting curve are calculated as follows Figure 3 As shown in Figure 1, the ideal factor of the diode decreases with increasing temperature. The constants obtained from the fitting curve are a=1.38,b=3.074,c=-291.5。 Using the method proposed by the present invention and the constants obtained from the fitting curve, the error obtained by measuring the temperature of the diode is as follows: Figure 4As shown, the temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 3%, indicating that the method proposed by the present invention is feasible.

[0095] Example 2

[0096] Example of temperature measurement using a SiC Schottky diode.

[0097] Using the above PN junction temperature measurement method, a SiC Schottky diode model C4D40120 is randomly selected for temperature measurement. A current is added to the SiC Schottky diode with a current signal frequency of 2kHz, and the diode forward voltage signal is measured. Based on the diode forward voltage and forward current at different temperatures, the ideal factor and its fitting curve are calculated as follows: Figure 5 As shown in FIG, the ideal factor of the diode increases with increasing temperature. The constants obtained from the fitting curve are a=1.107,b=-2.216,c=-276.1. Using the method proposed in the present invention and the constants obtained from the fitting curve, the error obtained by measuring the temperature using the diode is as follows: Figure 6 As shown, the temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 3%, indicating that the method proposed by the present invention is feasible.

[0098] Example 3

[0099] Example of SiC MOSFET parasitic diode temperature measurement.

[0100] Using the above PN junction temperature measurement method, we randomly select a SiC MOSFET parasitic diode of model C2M0080120D for temperature measurement. The voltage across the MOSFET's GS is set to -6V to ensure that its channel is completely closed. A current is added to the parasitic diode with a current signal frequency of 1.5kHz. The forward voltage signal of the parasitic diode is measured. Based on the forward voltage and forward current signals of the diode at different temperatures, the ideality factor and its fitting curve are calculated as follows: Figure 7 As shown in FIG, the ideal factor of the diode increases with increasing temperature. The constants obtained from the fitting curve are a=1.244,b=-2.851,c=-290.9. Using the method proposed in the present invention and the constants obtained from the fitting curve, the error obtained by measuring the temperature using the diode is as follows: Figure 8 As shown, the temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 3%, which shows that the method proposed by the present invention is feasible.

[0101] Example 4

[0102] Example of temperature measurement of a common MOSFET parasitic diode.

[0103] Using the above PN junction temperature measurement method, we randomly select a common MOSFET parasitic diode of model IRF520 for temperature measurement, add current to the parasitic diode, and measure the forward voltage signal of the parasitic diode. According to the forward voltage and forward current signals of the parasitic diode at different temperatures, the ideal factor and its fitting curve are calculated as follows: Figure 9 As shown in Figure 1, the ideal factor of the parasitic diode does not change much with temperature. The constants obtained from the fitting curve are a=1.019, b=0.211, and c=-29.49. Using the method proposed in the present invention, combined with the constants obtained from the fitting curve, the error obtained by measuring the temperature using the parasitic diode is as follows: Figure 10 As shown, the temperature measurement error obtained by this temperature measurement method is very small, and the temperature measurement error at each temperature is within 5%, which shows that the method proposed by the present invention is feasible.

[0104] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A PN junction temperature measurement method, characterized in that: It includes: Step S1, select a PN junction for temperature measurement, and measure the forward conduction current signal i of the PN junction at different temperatures. b And the forward conduction voltage signal v f , obtain the signal curves of forward conduction current, forward conduction voltage and time at different temperatures; Step S2, arbitrarily select two equal time periods Δt1 and Δt2, and obtain the forward conduction current signal i of the PN junction in the Δt1 time period. b1 , forward conduction voltage signal v f1 , and the forward conduction current signal i of the PN junction in the Δt2 period b2 , forward conduction voltage signal v f2 , through S V1 =∫v f1 dt、S V2 =∫v f2 dt、S I1 =∫ln(i b1 )dt、S I2 =∫ln(i b2 )dtIntegrate the forward conduction voltage and forward conduction current in the two time periods respectively, and get S V1 , S V2 , S I1 , S I2 ; Step S3, using Determine the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the elementary charge constant, and T is the thermodynamic temperature; Step S4, according to the ideal factor n at different temperatures obtained in step S3, using the data fitting method, combined with Fitting the relationship, fitting to obtain constants a, b, c, where T is the thermodynamic temperature; Step S5, measuring the temperature using the PN junction, measuring the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtaining a signal curve of the forward conduction current, the forward conduction voltage and time; Step S6, select a time period equal to the forward conduction current in step S2, and calculate S v11 , S v21 , S I11 , S I21 ; Step S7, according to Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant; Step S8, according to Calculate the actual PN junction temperature T.

2. The PN junction temperature measurement method according to claim 1, wherein: The PN junction is a diode or a parasitic diode of a switch tube.

3. A PN junction temperature measurement system, characterized in that: It includes: The signal curve acquisition module of PN junction forward conduction current, forward conduction voltage and time is used to obtain the forward conduction current signal i of the selected PN junction at different temperatures. b And the forward conduction voltage signal v f , obtain the signal curves of forward conduction current, forward conduction voltage and time at different temperatures; The integration module is used to arbitrarily select two equal time periods Δt1 and Δt2, and obtain the forward conduction current signal i of the PN junction in the Δt1 time period. b1 , forward conduction voltage signal v f1 , and the forward conduction current signal i of the PN junction in the Δt2 period b2 , forward conduction voltage signal v f2 , through S V1 =∫v f1 dt、S V2 =∫v f2 dt、S I1 =∫ln(i b1 )dt、S I2 =∫ln(i b2 )dtIntegrate the forward conduction voltage and forward conduction current in the two time periods respectively, and get S V1 , S V2 , S I1 , S I2 ; Ideality factor calculation module for utilizing Determine the ideality factor n at different temperatures, where k is the Boltzmann constant, q is the elementary charge constant, and T is the thermodynamic temperature; The data fitting and constant calculation module uses the data fitting method to combine the ideal factor n at different temperatures obtained by the ideal factor calculation module. Fitting the relationship, fitting to obtain constants a, b, c, where T is the thermodynamic temperature; a temperature measurement signal acquisition module, which uses the PN junction to measure temperature, measures the forward conduction current signal and the forward conduction voltage signal passing through the PN junction, and obtains a signal curve of the forward conduction current, the forward conduction voltage and time; The temperature measurement calculation module is used to select the time period equal to the forward conduction current of Δt1 and Δt2, and calculate S v11 , S v21 , S I11 , S I21 ; PN junction temperature calculation module, according to Calculate the value of m, where k is the Boltzmann constant and q is the basic charge constant; according to Calculate the actual PN junction temperature T.

4. The PN junction temperature measurement system according to claim 3, characterized in that: The PN junction is a diode or a parasitic diode of a switch tube.

5. A computer-readable storage medium, characterized in that The computer-readable storage medium includes a computer program, and when the computer program is run on an electronic device, the electronic device executes the PN junction temperature measurement method according to claim 1 or 2.

6. A PN junction temperature measuring device, characterized in that: include: A test circuit, a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the PN junction temperature measurement method according to claim 1 or 2 is implemented.

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