A method for preparing a perovskite thin film with reduced residual stress of low-dimensional fatty amine halide perovskite
By incorporating aromatic amine F-PEA into low-dimensional aliphatic amine halide perovskites, the residual stress problem in the perovskite thin film preparation process was solved, resulting in higher device performance and stability, especially in solar cells where it exhibits higher photoelectric conversion efficiency and air stability.
CN116113288BActive Publication Date: 2026-04-21UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information
- Application Number
- CN202211680887.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-26
- Publication Date
- 2026-04-21
- Estimated Expiration
- 2042-12-26
AI Technical Summary
Technical Problem
Residual stress caused by the inconsistency between the thermal expansion coefficient of perovskite thin films and the substrate during the fabrication process affects their structural stability and photoelectric conversion efficiency.
Method used
By incorporating a small amount of aromatic amine F-PEA into low-dimensional fatty amine halide perovskites, perovskite films are prepared in an air environment, thereby optimizing the phase composition and growth orientation of the perovskite and reducing residual stress.
Benefits of technology
This improved the stability and carrier transport efficiency of perovskite thin films, thereby enhancing the photoelectric conversion efficiency and device stability of solar cells.
✦ Generated by Eureka AI based on patent content.
Abstract
This invention discloses a method for preparing perovskite thin films to reduce residual stress in low-dimensional halide perovskites. This method involves introducing an aromatic amine molecule, F-PEA, into the low-dimensional aliphatic amine halide perovskite, which significantly reduces the residual stress during the crystallization process of the perovskite, effectively improving the mechanical stability of the film. When the perovskite thin film prepared by this method is used as the active layer in solar cells, the performance and stability of the resulting solar cell devices are greatly improved.
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