Substrate processing method

Abstract

A substrate processing method is provided. The substrate processing method includes: a step (S7) of applying a water repellent (SMT) to a substrate (W); a step (S11) of applying diluted isopropyl alcohol (dIPA) to the substrate (W) after applying the water repellent (SMT); and a step (S12) of drying the substrate (W) after applying the diluted isopropyl alcohol (dIPA).

Description

Technical Field

[0001] The invention relates to a substrate processing method. Background Art

[0002] One method for processing a substrate involves removing residue remaining on the substrate after patterning by ashing or etching. Known substrate processing methods sequentially subject the substrate to a chemical treatment, a rinse, and a spin drying process. During the rinse process, water is supplied to the substrate to remove the chemical solution from the substrate's upper surface.

[0003] However, when fine patterns are formed on the upper surface of the substrate, water that has entered the pattern may not be removed by the spin-drying process. Since water has a high surface tension, if water cannot be removed from the pattern, it may cause the pattern to collapse.

[0004] Therefore, in order to prevent the collapse of the pattern, a water repellent is applied to the substrate and the pattern is covered with a water repellent protective film. For example, Patent Document 1 discloses a substrate processing method that sequentially performs a chemical liquid treatment, a pure water cleaning treatment, a water repellent treatment, a pure water cleaning treatment, and a drying treatment on the substrate.

[0005] Specifically, in the pure water cleaning process after the chemical treatment, pure water is supplied to the substrate to remove the chemical from the upper surface of the substrate. In the water repellency treatment, a water repellent is supplied to the substrate to form a water repellent protective film that covers the pattern. In the pure water cleaning process after the water repellency treatment, pure water is supplied to the substrate to remove the water repellent remaining on the upper surface of the substrate.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Laid-Open No. 2010-114467. Summary of the Invention

[0009] Problems to be solved by the invention

[0010] However, it is difficult for water to reach the entire upper surface of the substrate. Therefore, there is a possibility that areas on the upper surface of the substrate will not be covered by pure water. Therefore, when only pure water is supplied, the removal rate of the water repellent (water repellent residue) remaining on the upper surface of the substrate may be reduced, and the cleanliness of the substrate may be reduced.

[0011] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing method capable of improving the cleanliness of a substrate.

[0012] Means used to solve problems

[0013] According to one embodiment of the present invention, a substrate processing method is a method for processing a substrate, comprising: a process of supplying a water repellent to the substrate; a process of supplying diluted isopropyl alcohol to the substrate after supplying the water repellent, wherein the diluted isopropyl alcohol is diluted isopropyl alcohol; and a process of drying the substrate after supplying the diluted isopropyl alcohol.

[0014] In one embodiment, the substrate processing method further includes a step of supplying isopropyl alcohol to the substrate before supplying the water repellent.

[0015] In one embodiment, the substrate processing method further includes the step of supplying isopropyl alcohol to the substrate after supplying the diluted isopropyl alcohol and before drying the substrate.

[0016] In one embodiment, the substrate processing method further includes a step of supplying isopropyl alcohol to the substrate after supplying the water repellent and before supplying the diluted isopropyl alcohol.

[0017] Effects of the Invention

[0018] The substrate processing method of the present invention can improve the cleanliness of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 FIG. 1 is a schematic diagram of a substrate processing apparatus used in the substrate processing method according to the first embodiment of the present invention.

[0020] Figure 2 This is a schematic diagram of a processing unit included in a substrate processing apparatus.

[0021] Figure 3 This is a flowchart showing a substrate processing method according to the first embodiment of the present invention.

[0022] Figure 4 This is a flowchart showing a substrate processing method according to a second embodiment of the present invention.

[0023] Figure 5 1 is a flowchart showing a substrate processing method according to a third embodiment of the present invention.

[0024] Figure 6 This is a flowchart showing a substrate processing method according to a fourth embodiment of the present invention. DETAILED DESCRIPTION

[0025] Hereinafter, referring to the accompanying drawings ( Figures 1 to 6 ) describes an embodiment of the substrate processing method of the present invention. However, the present invention is not limited to the following embodiment. In addition, descriptions of portions that are repeated may be omitted as appropriate. In addition, in the drawings, identical or equivalent portions are designated by the same component reference numerals and descriptions thereof are not repeated.

[0026] The "substrate" in this embodiment can be applied to various substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, magnetic disks, and substrates for magneto-optical disks. Although this embodiment is described below primarily using a substrate processing method used for processing a disk-shaped semiconductor wafer as an example, it can also be applied to the processing of various substrates exemplified above. Furthermore, the substrate can also have various shapes.

[0027] [Implementation Method 1]

[0028] Below, refer to Figures 1 to 3 The first embodiment of the present invention is described. Figure 1 The substrate processing apparatus 100 will be described. Figure 1 Schematic diagram of a substrate processing apparatus 100 used in the substrate processing method of this embodiment. Figure 1 1 is a schematic top view of a substrate processing apparatus 100 . The substrate processing apparatus 100 processes a substrate W. More specifically, the substrate processing apparatus 100 is a cluster-type apparatus for processing substrates W one by one. The substrate processing method of this embodiment can be performed using the substrate processing apparatus 100 , for example.

[0029] like Figure 1 As shown, the substrate processing apparatus 100 includes a plurality of processing units 1 , a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101 .

[0030] Each load port LP stacks and accommodates a plurality of substrates W. The index robot IR transfers substrates W between the load port LP and the central robot CR. The central robot CR transfers substrates W between the index robot IR and the processing unit 1. Alternatively, a device configuration may be employed in which a stage (path) for temporarily placing substrates W is provided between the index robot IR and the central robot CR, and substrates W are indirectly transferred between the index robot IR and the central robot CR via the stage.

[0031] The plurality of processing units 1 form a plurality of towers TW (in a top view) arranged so as to surround the central robot CR. Figure 1 Each tower TW includes a plurality of processing units 1 stacked up and down (in Figure 1 1 and 2. There are three processing units 1 in FIG. 1. Each processing unit 1 supplies a processing liquid to a substrate W and processes the substrate W.

[0032] The fluid cabinet 100A stores a treatment liquid. Each fluid tank 100B corresponds to one of the plurality of towers TW. The treatment liquid in the fluid cabinet 100A is supplied to all the treatment units 1 included in the tower TW corresponding to the fluid tank 100B via any one of the fluid tanks 100B.

[0033] In this embodiment, the treatment liquid includes DHF (dilute hydrofluoric acid), DIW (deionized water), SC1 (standard clean-1; the first standard cleaning solution, that is, a mixture of ammonia water, hydrogen peroxide water and water), IPA (isopropyl alcohol) and a water repellent SMT.

[0034] Next, the control device 101 will be described. The control device 101 controls the operation of various parts of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the index robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 103.

[0035] The control unit 102 includes a processor. For example, the control unit 102 includes a CPU (Central Processing Unit) or an MPU (Micro Processor Unit). Alternatively, the control unit 102 may include a general-purpose computer.

[0036] The storage unit 103 stores data and computer programs. The data includes recipe data. The recipe data includes information for displaying a plurality of recipes. The plurality of recipes respectively define the processing content and processing procedures of the substrate W.

[0037] The storage unit 103 includes a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media. The control unit 102 controls the operation of various components of the substrate processing apparatus 100 based on the computer program and data stored in the storage unit 103.

[0038] Next, refer to Figure 1 as well as Figure 2 The substrate processing apparatus 100 will be further described. Figure 2 Schematic diagram of the processing unit 1 of the substrate processing apparatus 100. In detail, Figure 2 is a schematic cross-sectional view of the processing unit 1.

[0039] like Figure 2 As shown, the processing unit 1 includes a chamber 2, a substrate holding portion 3, a rotation driving portion 4, a first nozzle 5, a second nozzle 6, a third nozzle 7, a fourth nozzle 8, a fifth nozzle 9, a cover 10, a first nozzle moving portion 50, a second nozzle moving portion 60, a third nozzle moving portion 70, a fourth nozzle moving portion 80, and a fifth nozzle moving portion 90. The substrate processing apparatus 100 further includes a first processing liquid supply portion 110, a second processing liquid supply portion 120, a third processing liquid supply portion 130, a fourth processing liquid supply portion 140, and a fifth processing liquid supply portion 150. The control device 101 (control unit 102) controls the substrate holding portion 3, the rotation driving portion 4, the cover 10, the first nozzle moving portion 50 to the fifth nozzle moving portion 90, and the first processing liquid supply portion 110 to the fifth processing liquid supply portion 150.

[0040] The chamber 2 has a substantially box-like shape and houses a substrate W, a substrate holder 3, a rotation drive unit 4, first to fifth nozzles 5 to 9, a cover 10, and first to fifth nozzle moving units 50 to 90. Furthermore, the chamber 2 houses a portion of the first to fifth processing liquid supply units 110 to 150.

[0041] The substrate holding portion 3 holds the substrate W horizontally. More specifically, the substrate W has a pattern forming surface on which a pattern is formed. The substrate holding portion 3 holds the substrate W with the pattern forming surface facing upward. Therefore, the upper surface of the substrate W held by the substrate holding portion 3 is the pattern forming surface. The pattern is formed on the surface of the substrate W by, for example, etching. Typically, the substrate processing method of this embodiment uses the substrate W after dry etching as the object of processing. That is, the substrate processing device 100 performs a cleaning process, and the cleaning process removes polymer residues attached to the substrate W after the etching process.

[0042] The substrate holding portion 3 is, for example, a vacuum-type spin chuck. However, the substrate holding portion 3 is not limited to a vacuum-type spin chuck. The substrate holding portion 3 may also be, for example, a clamping-type spin chuck or a Bernoulli-type spin chuck.

[0043] The rotation drive unit 4 rotates the substrate holder 3 about the rotation axis AX. As a result, the substrate W and the substrate holder 3 rotate integrally about the rotation axis AX. The rotation axis AX extends in the vertical direction. The rotation drive unit 4 includes, for example, an electric motor.

[0044] The first nozzle 5 supplies DHF to the substrate W from above the substrate W. In detail, the first nozzle 5 ejects DHF toward the rotating substrate W. The first nozzle moving unit 50 moves the first nozzle 5 between the processing position and the retreat position. When the first nozzle 5 moves to the processing position, it is opposite to the substrate W when viewed from above. When the first nozzle 5 moves to the retreat position, it is not opposite to the substrate W when viewed from above. In detail, the first nozzle 5 is opposite to the center of the upper surface of the substrate W when moved to the processing position. In addition, when the first nozzle 5 moves to the retreat position, it retreats to the periphery of the substrate W when viewed from above.

[0045] Specifically, the first nozzle moving unit 50 includes a first nozzle arm 51 and a first nozzle driving unit 52. The first nozzle arm 51 extends in a substantially horizontal direction. The first nozzle 5 is arranged at the front end of the first nozzle arm 51. The first nozzle driving unit 52 causes the first nozzle arm 51 to rotate along a substantially horizontal plane with the rotation axis extending in the vertical direction as the center. As a result, the first nozzle 5 moves circumferentially along the circumference with the rotation axis extending in the vertical direction as the center. The first nozzle driving unit 52 includes an electric motor capable of forward and reverse rotation. The first nozzle driving unit 52 is controlled by the control device 101 (control unit 102).

[0046] The first processing liquid supply unit 110 supplies DHF to the first nozzle 5. Specifically, the first processing liquid supply unit 110 includes a first processing liquid supply pipe 111 and a first valve 112. A portion of the first processing liquid supply pipe 111 is housed in the chamber 2.

[0047] The first processing liquid supply pipe 111 supplies DHF to the first nozzle 5. The first processing liquid supply pipe 111 is a tubular member through which DHF flows. A first valve 112 is provided in the first processing liquid supply pipe 111. The first valve 112 is, for example, a solenoid valve.

[0048] The first valve 112 is an on-off valve for opening and closing the flow path of the first treatment liquid supply pipe 111. The first valve 112 controls the circulation of DHF flowing in the first treatment liquid supply pipe 111. In detail, when the first valve 112 is opened, DHF flows to the first nozzle 5 via the first treatment liquid supply pipe 111. As a result, DHF is ejected from the first nozzle 5. When the first valve 112 is closed, the circulation of DHF is blocked, and the first nozzle 5 stops ejecting DHF. In addition, the first valve 112 also functions as a regulating valve for adjusting the flow rate of DHF flowing in the first treatment liquid supply pipe 111. The first valve 112 is controlled by the control device 101 (control unit 102).

[0049] The second nozzle 6 supplies DIW onto the substrate W from above. Specifically, the second nozzle 6 ejects DIW toward the rotating substrate W. Similar to the first nozzle moving unit 50, the second nozzle moving unit 60 moves the second nozzle 6 between a processing position and a retreat position. Specifically, similar to the first nozzle moving unit 50, the second nozzle moving unit 60 includes a second nozzle arm 61 and a second nozzle driver 62. Since the configuration of the second nozzle moving unit 60 is similar to that of the first nozzle moving unit 50, a detailed description thereof will be omitted.

[0050] The second processing liquid supply unit 120 supplies DIW to the second nozzle 6. Specifically, similar to the first processing liquid supply unit 110, the second processing liquid supply unit 120 includes a second processing liquid supply pipe 121 and a second valve 122. A portion of the second processing liquid supply pipe 121 is housed in the chamber 2. The second processing liquid supply pipe 121 supplies DIW to the second nozzle 6. The second valve 122 is provided on the second processing liquid supply pipe 121. Since the configuration of the second processing liquid supply unit 120 is similar to that of the first processing liquid supply unit 110, a detailed description thereof will be omitted.

[0051] The third nozzle 7 supplies SC1 onto the substrate W from above. Specifically, the third nozzle 7 ejects SC1 toward the rotating substrate W. Similar to the first nozzle moving unit 50, the third nozzle moving unit 70 moves the third nozzle 7 between a processing position and a retreat position. Specifically, similar to the first nozzle moving unit 50, the third nozzle moving unit 70 includes a third nozzle arm 71 and a third nozzle driving unit 72. Since the configuration of the third nozzle moving unit 70 is similar to that of the first nozzle moving unit 50, a detailed description thereof will be omitted.

[0052] The third processing liquid supply unit 130 supplies SC1 to the third nozzle 7. Specifically, similar to the first processing liquid supply unit 110, the third processing liquid supply unit 130 includes a third processing liquid supply pipe 131 and a third valve 132. The chamber 2 houses a portion of the third processing liquid supply pipe 131. The third processing liquid supply pipe 131 supplies SC1 to the third nozzle 7. The third valve 132 is provided on the third processing liquid supply pipe 131. Since the configuration of the third processing liquid supply unit 130 is similar to that of the first processing liquid supply unit 110, a detailed description thereof will be omitted.

[0053] The fourth nozzle 8 supplies IPA and diluted IPA to the substrate W from above the substrate W. In detail, the fourth nozzle 8 ejects IPA and diluted IPA toward the rotating substrate W. Diluted IPA refers to diluted IPA. In this embodiment, diluted IPA is IPA diluted with DIW. In other words, diluted IPA is a mixture of IPA and DIW. The ratio (volume ratio) of DIW to IPA is, for example, greater than 10% and less than 30%. Hereinafter, diluted IPA may sometimes be referred to as "dIPA".

[0054] Similar to the first nozzle moving unit 50, the fourth nozzle moving unit 80 moves the fourth nozzle 8 between a processing position and a retracted position. Specifically, similar to the first nozzle moving unit 50, the fourth nozzle moving unit 80 includes a fourth nozzle arm 81 and a fourth nozzle driving unit 82. Since the configuration of the fourth nozzle moving unit 80 is similar to that of the first nozzle moving unit 50, a detailed description thereof will be omitted.

[0055] The fourth processing liquid supply unit 140 supplies IPA and dIPA to the fourth nozzle 8. Specifically, the fourth processing liquid supply unit 140 includes a fourth processing liquid supply pipe 141, a fourth valve 142, a fifth processing liquid supply pipe 143, and a fifth valve 144. The chamber 2 accommodates a portion of the fourth processing liquid supply pipe 141.

[0056] The fourth process liquid supply pipe 141 supplies IPA and dIPA to the fourth nozzle 8. The fifth process liquid supply pipe 143 supplies DIW to the fourth process liquid supply pipe 141. A fourth valve 142 is provided on the fourth process liquid supply pipe 141. A fifth valve 144 is provided on the fifth process liquid supply pipe 143. The fourth valve 142 and the fifth valve 144 are, for example, solenoid valves. The fifth process liquid supply pipe 143 is connected to the fourth process liquid supply pipe 141 between the fourth nozzle 8 and the fourth valve 142.

[0057] The fourth valve 142 is an on-off valve used to open and close the flow path of the fourth process liquid supply pipe 141. The fourth valve 142 controls the circulation of IPA flowing in the fourth process liquid supply pipe 141. In detail, when the fourth valve 142 is opened, IPA flows to the fourth nozzle 8 via the fourth process liquid supply pipe 141. When the fourth valve 142 is closed, the circulation of IPA is blocked. In addition, the fourth valve 142 also functions as a regulating valve for adjusting the flow rate of IPA flowing in the fourth process liquid supply pipe 141. The fourth valve 142 is controlled by the control device 101 (control unit 102).

[0058] The fifth valve 144 is an on-off valve for opening and closing the flow path of the fifth process liquid supply pipe 143. The fifth valve 144 controls the circulation of the DIW flowing in the fifth process liquid supply pipe 143. In detail, when the fifth valve 144 is opened, the DIW flows into the fourth process liquid supply pipe 141 via the fifth process liquid supply pipe 143. When the fifth valve 144 is closed, the circulation of the DIW is blocked. In addition, the fifth valve 144 also functions as a regulating valve for adjusting the flow rate of the DIW flowing in the fifth process liquid supply pipe 143. The fifth valve 144 is controlled by the control device 101 (control unit 102).

[0059] When the control device 101 (control unit 102) causes the fourth nozzle 8 to discharge IPA, it opens the fourth valve 142 and closes the fifth valve 144. As a result, IPA is supplied from the fourth processing liquid supply pipe 141 to the fourth nozzle 8, and IPA is discharged from the fourth nozzle 8. When the control device 101 (control unit 102) closes the fourth valve 142, the flow of IPA is blocked, and the discharge of IPA from the fourth nozzle 8 stops.

[0060] When the control device 101 (control unit 102) causes the fourth nozzle 8 to eject dIPA, it opens the fourth valve 142 and the fifth valve 144. As a result, DIW flows from the fifth process liquid supply pipe 143 and merges with IPA flowing in the fourth process liquid supply pipe 141, thereby generating dIPA. dIPA is supplied from the fourth process liquid supply pipe 141 to the fourth nozzle 8. As a result, dIPA is ejected from the fourth nozzle 8. When the control device 101 (control unit 102) closes the fourth valve 142 and the fifth valve 144, the flow of IPA and DIW is blocked, and the ejection of dIPA from the fourth nozzle 8 stops.

[0061] The fifth nozzle 9 supplies water repellent SMT onto the substrate W from above. Specifically, the fifth nozzle 9 sprays the water repellent SMT toward the rotating substrate W. Similar to the first nozzle moving unit 50, the fifth nozzle moving unit 90 moves the fifth nozzle 9 between a processing position and a retreat position. Specifically, similar to the first nozzle moving unit 50, the fifth nozzle moving unit 90 includes a fifth nozzle arm 91 and a fifth nozzle driving unit 92. Since the fifth nozzle moving unit 90 is similar to the first nozzle moving unit 50, a detailed description thereof will be omitted.

[0062] The fifth process liquid supply unit 150 supplies a water repellent agent SMT to the fifth nozzle 9. Specifically, similar to the first process liquid supply unit 110, the fifth process liquid supply unit 150 includes a sixth process liquid supply pipe 151 and a sixth valve 152. The chamber 2 houses a portion of the sixth process liquid supply pipe 151. The sixth process liquid supply pipe 151 supplies the water repellent agent SMT to the fifth nozzle 9. The sixth valve 152 is provided on the sixth process liquid supply pipe 151. Since the structure of the fifth process liquid supply unit 150 is the same as that of the first process liquid supply unit 110, a detailed description thereof will be omitted.

[0063] The water repellent SMT is, for example, a silicon-based water repellent or a metal-based water repellent. A silicon-based water repellent renders silicon or a compound containing silicon water-repellent (hydrophobic). A metal-based water repellent renders metal or a compound containing metal water-repellent (hydrophobic).

[0064] The silicon-based water repellent is, for example, a silane coupling agent, which includes at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorine-based hydrophobizing agent. The non-chlorine-based hydrophobizing agent includes, for example, at least one of dimethylsilyldimethylamine (DMSDMA), dimethylsilyldiethylamine (DMSDEA), hexamethyldisilazane, tetramethyldisilazane (TMDS), bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane (DMATMS), N-(trimethylsilyl)dimethylamine, and an organosilane compound.

[0065] The metal-based water repellent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

[0066] The water repellent SMT may also be diluted with a solvent that is compatible with the hydrophilic organic solvent, such as IPA or PGMEA (propylene glycol monomethyl ether acetate).

[0067] The water repellent SMT forms a water repellent protective film on the upper surface of the substrate W. As a result, the pattern formed on the substrate W is covered with the water repellent protective film. Covering the pattern with the water repellent protective film can prevent the pattern from collapsing.

[0068] The cover 10 is arranged around the substrate holder 3. The cover 10 surrounds the sides of the substrate W held by the substrate holder 3. The cover 10 catches the processing liquid (DHF, DIW, SC1, IPA, dIPA, water repellent SMT) scattered from the rotating substrate W.

[0069] Next, refer to Figures 1 to 3 A substrate processing method according to this embodiment will be described. Figure 3Flowchart showing the substrate processing method according to this embodiment. Figure 3 The illustrated process includes steps S1 to S7 and steps S11 to S13 .

[0070] By reference Figure 1 as well as Figure 2 When the substrate processing apparatus 100 described above processes a substrate W, the central robot CR first loads the substrate W into the chamber 2 of the processing unit 1 (step S1). The substrate W loaded into the chamber 2 is held by the substrate holder 3. While the substrate holder 3 holds the substrate W, the rotation drive unit 4 begins to rotate the substrate W.

[0071] When the substrate W starts to be rotated, the first nozzle 5 moves from the retreat position to the processing position, and DHF is supplied from the first nozzle 5 to the substrate W (step S2 ). Specifically, DHF is ejected from the first nozzle 5 toward the substrate W.

[0072] After DHF reaches the center of the upper surface of substrate W, it flows outward from substrate W as substrate W rotates. As a result, a DHF film forms on the upper surface of substrate W. When the DHF film is formed on the upper surface of substrate W, the discharge of DHF from first nozzle 5 toward substrate W stops. Then, first nozzle 5 moves from the processing position to the retreat position. The DHF film removes the natural oxide film formed on the upper surface of substrate W.

[0073] After the substrate W is processed by DHF, the second nozzle 6 moves from the retreat position to the processing position, and DIW is supplied from the second nozzle 6 to the substrate W (step S3 ). Specifically, DIW is ejected from the second nozzle 6 toward the substrate W.

[0074] After the DIW reaches the center of the upper surface of the substrate W, the substrate W rotates and flows outward from the substrate W. As a result, the DHF film is replaced by a DIW film. In other words, the DIW rinses away any DHF remaining on the upper surface of the substrate W (cleaning process). When a DIW film is formed on the upper surface of the substrate W, the second nozzle 6 stops discharging DIW toward the substrate W. The second nozzle 6 then moves from the processing position to the retreat position.

[0075] After the cleaning process by DIW, the third nozzle 7 moves from the retreat position to the processing position, and SC1 is supplied from the third nozzle 7 to the substrate W (step S4 ). Specifically, SC1 is ejected from the third nozzle 7 toward the substrate W.

[0076] After SC1 reaches the center of the upper surface of substrate W, it flows outward from substrate W as substrate W rotates. As a result, the DIW liquid film is replaced by a SC1 liquid film. When a SC1 liquid film forms on the upper surface of substrate W, the discharge of SC1 from the third nozzle 7 toward substrate W ceases. The third nozzle 7 then moves from the processing position to the retreat position. The SC1 liquid film removes resist residue from the upper surface of substrate W.

[0077] After the substrate W is processed by SC1, the second nozzle 6 moves from the retreat position to the processing position, and DIW is supplied to the substrate W from the second nozzle 6 (step S5). As a result, similar to step S3, the SC1 liquid film is replaced by the DIW liquid film. In other words, the SC1 remaining on the upper surface of the substrate W is rinsed away by the DIW (cleaning process).

[0078] When a DIW liquid film is formed on the upper surface of the substrate W, the discharge of DIW from the second nozzle 6 toward the substrate W is stopped. Thereafter, the second nozzle 6 moves from the processing position to the retreat position.

[0079] After the cleaning process by DIW, the fourth nozzle 8 moves from the retreat position to the processing position, and IPA is supplied from the fourth nozzle 8 to the substrate W (step S6 ). Specifically, IPA is ejected from the fourth nozzle 8 toward the substrate W.

[0080] After the IPA reaches the center of the upper surface of the substrate W, the rotation of the substrate W causes it to flow outward from the substrate W. As a result, the DIW film is replaced by an IPA film. When a film of IPA forms on the upper surface of the substrate W, the discharge of IPA from the fourth nozzle 8 toward the substrate W ceases. The fourth nozzle 8 then moves from the processing position to the retreat position. Supplying IPA to the substrate W before applying the water repellent SMT facilitates distributing the water repellent SMT across the entire upper surface of the substrate W.

[0081] After IPA is supplied to the substrate W, the fifth nozzle 9 moves from the retreat position to the processing position, and the water repellent SMT is supplied to the substrate W from the fifth nozzle 9 (step S7 ). Specifically, the water repellent SMT is ejected toward the substrate W from the fifth nozzle 9 .

[0082] After the water repellent SMT is deposited on the center of the upper surface of the substrate W, it flows toward the outer side of the substrate W due to the rotation of the substrate W. As a result, the liquid film of IPA is replaced by a liquid film of the water repellent SMT. When a liquid film of the water repellent SMT is formed on the upper surface of the substrate W, the spraying of the water repellent SMT from the fifth nozzle 9 toward the substrate W is stopped. Thereafter, the fifth nozzle 9 moves from the processing position to the retreat position. A liquid film of the water repellent SMT is formed on the upper surface of the substrate W, thereby forming a water repellent protective film on the upper surface of the substrate W and covering the pattern formed on the substrate W with the water repellent protective film (water repellent treatment).

[0083] After the water repellent treatment, the fourth nozzle 8 moves from the retreat position to the treatment position, and dIPA is supplied from the fourth nozzle 8 to the substrate W (step S11 ). Specifically, dIPA is ejected from the fourth nozzle 8 toward the substrate W.

[0084] After the dIPA reaches the center of the upper surface of the substrate W, it flows outward from the substrate W as the substrate W rotates. As a result, residual water repellent SMT is removed from the upper surface of the substrate W, forming a dIPA liquid film on the upper surface of the substrate W. In other words, the dIPA rinses the water repellent SMT remaining on the upper surface of the substrate W (cleaning process). When the dIPA liquid film is formed on the upper surface of the substrate W, the discharge of dIPA from the fourth nozzle 8 toward the substrate W ceases. The fourth nozzle 8 then moves from the processing position to the retreat position.

[0085] After the dIPA cleaning process, a drying process is performed to dry the substrate W (step S12). Specifically, the control device 101 (control unit 102) controls the rotation drive unit 4 to increase the rotation speed of the substrate W. As a result, a large centrifugal force is applied to the liquid adhering to the substrate W, causing the liquid adhering to the substrate W to be thrown away and dispersed around the substrate W. In this way, the liquid is removed from the substrate W, thereby drying the substrate W. Furthermore, the control device 101 (control unit 102) causes the rotation drive unit 4 to stop rotating the substrate W, for example, after a predetermined time has passed since the start of high-speed rotation of the substrate W.

[0086] After the drying process, the central robot CR carries out the substrate W from the chamber 2 (step S13). Figure 3 The processing shown.

[0087] Above, refer to Figures 1 to 3 Embodiment 1 of the present invention is described. According to this embodiment, a dIPA-based cleaning process is performed after the water repellent treatment. The surface tension of dIPA is smaller than that of water. Therefore, compared with water, dIPA is more likely to spread over the entire upper surface of the substrate W. Therefore, the water repellent SMT (residue of the water repellent SMT) remaining on the upper surface of the substrate W can be removed from the entire upper surface of the substrate W, thereby improving the cleanliness of the substrate W. In addition, since dIPA is a highly polar liquid, the residue of the water repellent SMT is easily dissolved. Therefore, the residue of the water repellent SMT can be efficiently removed.

[0088] Furthermore, according to the present embodiment, IPA and dIPA can be ejected from the fourth nozzle 8. Therefore, it is not necessary to provide a nozzle for dIPA in the substrate processing apparatus 100 (processing unit 1).

[0089] Among liquids with low surface tension and high polarity is PGMEA. However, when performing a cleaning process using PGMEA after water repellent treatment, a dedicated mechanism for supplying PGMEA to the substrate W is required in the substrate processing apparatus 100. According to this embodiment, the cleaning process after water repellent treatment can be performed without providing a dedicated mechanism in the substrate processing apparatus 100 for supplying the chemical solution used for the cleaning process after water repellent treatment to the substrate W.

[0090] Furthermore, according to this embodiment, the pattern can be covered with a water-repellent protective film. Therefore, the contact angle of liquid adhering to the pattern can be increased before the drying process. As a result, the surface tension of the liquid acting on the pattern during the drying process is reduced, which can prevent the pattern from collapsing.

[0091] Furthermore, according to this embodiment, a dIPA cleaning process is performed after the water-repellent treatment. Since dIPA has a lower surface tension than water, the surface tension of the liquid acting on the pattern during the drying process is even lower than when a water-repellent treatment is performed after the water-repellent treatment, further preventing pattern collapse.

[0092] In addition, although the water repellent SMT reacts with IPA to produce a reaction product, this reaction product dissolves in the water contained in dIPA. Therefore, according to this embodiment, the reaction product produced by the reaction of the water repellent SMT and IPA can be removed.

[0093] [Implementation Method 2]

[0094] Next, refer to Figure 1 、 Figure 2 as well as Figure 4 Embodiment 2 of the present invention will be described. However, only matters different from Embodiment 1 will be described, and descriptions of matters common to Embodiment 1 will be omitted. Embodiment 2 differs from Embodiment 1 in that IPA is supplied to the substrate W after dIPA is supplied to the substrate W.

[0095] Figure 4 : is a flow chart showing the substrate processing method of this embodiment. Figure 4 The processing shown can be done by referring to Figure 1 as well as Figure 2 This is performed using the substrate processing apparatus 100 described above. Figure 4 The process shown includes steps S1 to S7 and steps S21 to S24. Figure 4 The processing of steps S1 to S7 shown in FIG. Figure 3 The processes of steps S1 to S7 shown are the same, and therefore their description is omitted.

[0096] like Figure 4As shown, after the water repellent treatment, the fourth nozzle 8 moves from the retreat position to the treatment position, and dIPA is supplied from the fourth nozzle 8 to the substrate W (step S21). Specifically, dIPA is ejected from the fourth nozzle 8 toward the substrate W.

[0097] After the dIPA reaches the center of the upper surface of the substrate W, it flows outward from the substrate W as the substrate W rotates. As a result, residual water repellent SMT is removed from the upper surface of the substrate W, leaving a dIPA liquid film on the upper surface of the substrate W. In other words, the dIPA rinses away the water repellent SMT remaining on the upper surface of the substrate W (cleaning process).

[0098] In this embodiment, after a dIPA liquid film is formed on the upper surface of the substrate W, IPA is supplied from the fourth nozzle 8 toward the substrate W (step S22). Specifically, the fifth valve 144 is closed, stopping the supply of DIW from the fifth processing liquid supply line 143 to the fourth processing liquid supply line 141. As a result, IPA is ejected from the fourth nozzle 8 toward the substrate W.

[0099] After the IPA is deposited on the center of the upper surface of the substrate W, it flows outward from the substrate W as the substrate W rotates. As a result, the dIPA film is replaced by an IPA film. When an IPA film is formed on the upper surface of the substrate W, the discharge of IPA from the fourth nozzle 8 toward the substrate W stops. The fourth nozzle 8 then moves from the processing position to the retreat position. Furthermore, the reaction products produced by the reaction between the IPA supplied to the substrate W before the water repellent treatment and the water repellent SMT are removed from the substrate W along with the dIPA when the dIPA film is replaced by an IPA film.

[0100] After forming an IPA liquid film on the upper surface of the substrate W, Figure 3 The drying process is performed in the same manner as in step S12 described above (step S23). After the drying process, the central robot CR carries out the substrate W from the chamber 2 (step S24). Figure 4 The processing shown.

[0101] Above, refer to Figure 1 、 Figure 2 as well as Figure 4 This describes the second embodiment of the present invention. Similar to the first embodiment, this embodiment improves the cleanliness of the substrate W. Furthermore, this embodiment allows the upper surface of the substrate W to be covered with a film of IPA before drying. Because IPA has a lower surface tension than dIPA, the surface tension of the liquid acting on the pattern during the drying process is even lower, further preventing pattern collapse.

[0102] [Implementation Method 3]

[0103] Next, refer to Figure 1 、 Figure 2 as well as Figure 5 Embodiment 3 of the present invention will be described. However, only matters different from Embodiments 1 and 2 will be described, and descriptions of matters common to Embodiments 1 and 2 will be omitted. Embodiment 3 differs from Embodiment 1 in that IPA is supplied to the substrate W before dIPA is supplied to the substrate W.

[0104] Figure 5 : is a flow chart showing a substrate processing method of this embodiment. As in the first and second embodiments, Figure 5 The processing shown can be done by referring to Figure 1 as well as Figure 2 This is performed using the substrate processing apparatus 100 described above. Figure 5 The process shown includes steps S1 to S7 and steps S31 to S34. Figure 5 The processing of steps S1 to S7 shown in FIG. Figure 3 The processes of steps S1 to S7 shown are the same, and therefore their description is omitted.

[0105] like Figure 5 As shown, after the water repellent treatment, the fourth nozzle 8 moves from the retreat position to the treatment position, and IPA is supplied from the fourth nozzle 8 to the substrate W (step S31 ). Specifically, IPA is ejected from the fourth nozzle 8 toward the substrate W.

[0106] After the IPA reaches the center of the upper surface of the substrate W, the rotation of the substrate W causes it to flow outward from the substrate W. As a result, the residual water repellent SMT is removed from the upper surface of the substrate W, leaving an IPA film on the upper surface of the substrate W. In other words, the IPA rinses away the residual water repellent SMT on the upper surface of the substrate W (cleaning process).

[0107] After the IPA cleaning process, dIPA is supplied from the fourth nozzle 8 toward the substrate W (step S32). Specifically, the fifth valve 144 is opened, and DIW is supplied from the fifth processing liquid supply pipe 143 to the fourth processing liquid supply pipe 141. As a result, dIPA is ejected from the fourth nozzle 8 toward the substrate W.

[0108] After the dIPA lands at the center of the upper surface of the substrate W, the substrate W rotates and flows outward from the substrate W. As a result, the IPA film is replaced by a dIPA film. When the dIPA film is formed on the upper surface of the substrate W, the discharge of dIPA from the fourth nozzle 8 toward the substrate W ceases. The fourth nozzle 8 then moves from the processing position to the retreat position.

[0109] After forming a dIPA liquid film on the upper surface of the substrate W, Figure 3The drying process is performed in the same manner as in the step S12 described above (step S33). After the drying process, the central robot CR carries out the substrate W from the chamber 2 (step S34). Figure 5 The processing shown.

[0110] Above, refer to Figure 1 、 Figure 2 as well as Figure 5 Embodiment 3 of the present invention has been described. According to this embodiment, the cleanliness of the substrate W can be improved similarly to the first embodiment.

[0111] Furthermore, according to this embodiment, IPA can be supplied to the substrate W before dIPA is supplied to the substrate W. Since IPA has a lower surface tension than dIPA, it can be more easily spread over the entire upper surface of the substrate W than dIPA. Therefore, by supplying dIPA to the substrate W after IPA is supplied to the substrate W, dIPA can be more easily spread over the entire upper surface of the substrate W.

[0112] Furthermore, since the reaction product generated by the IPA supplied after the water repellent treatment and the water repellent SMT is dissolved in dIPA, it is removed from the substrate W together with dIPA during the drying process.

[0113] [Implementation Method 4]

[0114] Next, refer to Figure 1 、 Figure 2 as well as Figure 6 Embodiment 4 of the present invention will be described. However, only matters different from Embodiments 1 to 3 will be described, and descriptions of matters common to Embodiments 1 to 3 will be omitted. Embodiment 4 differs from Embodiment 3 in that IPA is supplied to the substrate W after dIPA is supplied to the substrate W.

[0115] Figure 6 : is a flow chart showing a substrate processing method of this embodiment. Figure 6 The processing shown can be done by referring to Figure 1 as well as Figure 2 This is performed using the substrate processing apparatus 100 described above. Figure 6 The process shown includes steps S1 to S7 and steps S41 to S45. Figure 6 The processing of steps S1 to S7 shown in FIG. Figure 3 The processes from step S1 to step S7 are the same, and therefore their description is omitted.

[0116] like Figure 6 As shown, after water repellent treatment, the Figure 5Similarly to the aforementioned step S31 , the fourth nozzle 8 moves from the retreat position to the processing position, and IPA is supplied to the substrate W from the fourth nozzle 8 (step S41 ).

[0117] After the IPA cleaning process, dIPA is supplied from the fourth nozzle 8 toward the substrate W (step S42). Specifically, the fifth valve 144 is opened, and DIW is supplied from the fifth processing liquid supply pipe 143 to the fourth processing liquid supply pipe 141. As a result, dIPA is ejected from the fourth nozzle 8 toward the substrate W.

[0118] After landing on the center portion of the upper surface of the substrate W, the dIPA flows toward the outside of the substrate W due to the rotation of the substrate W. As a result, the IPA liquid film is replaced by the dIPA liquid film.

[0119] In this embodiment, after a dIPA liquid film is formed on the upper surface of the substrate W, IPA is supplied from the fourth nozzle 8 toward the substrate W (step S43). Specifically, the fifth valve 144 is closed, stopping the supply of DIW from the fifth processing liquid supply line 143 to the fourth processing liquid supply line 141. As a result, IPA is ejected from the fourth nozzle 8 toward the substrate W.

[0120] After the IPA reaches the center of the upper surface of the substrate W, the substrate W rotates and flows outward from the substrate W. As a result, the dIPA film is replaced by an IPA film. When an IPA film is formed on the upper surface of the substrate W, the discharge of IPA from the fourth nozzle 8 toward the substrate W ceases. The fourth nozzle 8 then moves from the processing position to the retreat position.

[0121] After forming an IPA liquid film on the upper surface of the substrate W, Figure 3 The drying process is performed in the same manner as in the step S12 described above (step S44). After the drying process, the central robot CR carries out the substrate W from the chamber 2 (step S45). Figure 6 The processing shown.

[0122] Above, refer to Figure 1 、 Figure 2 as well as Figure 6 The fourth embodiment of the present invention has been described. Similar to the first embodiment, this embodiment improves the cleanliness of the substrate W. Furthermore, this embodiment allows the upper surface of the substrate W to be covered with a liquid film of IPA before drying. Consequently, similar to the second embodiment, pattern collapse can be further avoided.

[0123] Above, with reference to the accompanying drawings ( Figures 1 to 6) illustrate the embodiments of the present invention. However, the present invention is not limited to the above-mentioned embodiments and can be implemented in various ways without departing from the spirit of the present invention. In addition, the multiple components disclosed in the above-mentioned embodiments can be appropriately changed. For example, a component of all the components shown in a certain embodiment can be added to the components of another embodiment, or some components of all the components shown in a certain embodiment can be deleted from the embodiment.

[0124] To facilitate understanding of the present invention, the accompanying drawings schematically illustrate the various components. The thickness, length, number, and spacing of the components shown in the drawings may differ from the actual configuration due to the nature of the drawings. Furthermore, the configurations of the components shown in the above embodiments are merely examples and are not particularly limiting. Various modifications may be made without departing substantially from the effects of the present invention.

[0125] For example, although in reference Figures 1 to 6 In the embodiment described above, IPA is supplied to the substrate W before the water repellent treatment. However, the supply of IPA before the water repellent treatment may be omitted.

[0126] In addition, although in reference Figures 1 to 6 In the embodiment described above, the substrate W after the etching process is the target of the process. However, the substrate W after the ashing process may also be the target of the process.

[0127] In addition, although in reference Figures 1 to 6 In the described embodiment, a cleaning process of a cluster method for processing substrates W one by one is described. However, the present invention can also be applied to a cleaning process of a batch method for processing a plurality of substrates W at a time.

[0128] In addition, although in reference Figures 1 to 6 In the described embodiment, the substrate W after patterning is treated as the object of treatment, but the present invention can also be widely applied to treatments for cleaning the substrate W.

[0129] Industrial Applicability

[0130] The present invention is useful in methods for processing substrates.

[0131] Description of Reference Signs

[0132] 5: First nozzle

[0133] 6: Second nozzle

[0134] 7: The third nozzle

[0135] 8: The fourth nozzle

[0136] 9: The fifth nozzle

[0137] 100: substrate processing device

[0138] 110: First processing liquid supply unit

[0139] 111: First processing liquid supply pipe

[0140] 112: First valve

[0141] 120: Second processing liquid supply unit

[0142] 121: Second processing liquid supply pipe

[0143] 122: Second valve

[0144] 130: Third processing liquid supply unit

[0145] 131: Third processing liquid supply pipe

[0146] 132: The third valve

[0147] 140: Fourth processing liquid supply unit

[0148] 141: Fourth processing liquid supply pipe

[0149] 142: Fourth valve

[0150] 143: Fifth processing liquid supply pipe

[0151] 144: Fifth valve

[0152] 150: Fifth processing liquid supply unit

[0153] 151: Sixth processing liquid supply pipe

[0154] 152: Sixth valve

[0155] SMT: Water repellent

[0156] W: substrate.

Claims

1. A substrate processing method, which is a method for processing a substrate, wherein: include: In the first step, isopropyl alcohol is supplied to the substrate; a second step of supplying a water repellent to the substrate after the first step; A third step, after the second step, supplying diluted isopropyl alcohol to the substrate, wherein the diluted isopropyl alcohol is diluted isopropyl alcohol; a fourth step of supplying isopropyl alcohol to the substrate after the third step; and The fifth step is to dry the substrate after the fourth step. The diluted isopropyl alcohol comprises isopropyl alcohol and deionized water, In the diluted isopropyl alcohol, the ratio of the deionized water to the isopropyl alcohol is greater than or equal to 10% and less than or equal to 30%.

2. A substrate processing method, which is a method for processing a substrate, wherein: include: In the first step, isopropyl alcohol is supplied to the substrate; a second step of supplying a water repellent to the substrate after the first step; A third step, after the second step, supplying isopropyl alcohol to the substrate; A fourth step, after the third step, supplying diluted isopropyl alcohol to the substrate, wherein the diluted isopropyl alcohol is diluted isopropyl alcohol; a fifth step of supplying isopropyl alcohol to the substrate after the fourth step; and The sixth step is to dry the substrate after the fifth step. The diluted isopropyl alcohol comprises isopropyl alcohol and deionized water, In the diluted isopropyl alcohol, the ratio of the deionized water to the isopropyl alcohol is greater than or equal to 10% and less than or equal to 30%.

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