Atomic layer deposition machine applicable to bonding substrates

Abstract

The present invention relates to an atomic layer deposition machine suitable for a bonding substrate, mainly including a reaction chamber, a carrier plate, a shielding mechanism and a diffusion unit, wherein the carrier plate and the diffusion unit are located in the accommodation space of the reaction chamber. The shielding mechanism includes a connecting rod and a shielding plate, wherein the shielding plate is located in the accommodation space and faces the carrier plate, and the connecting rod passes through the reaction chamber and is connected to the shielding plate. The carrier plate is used to carry at least one bonding substrate and drive the carried bonding substrate to displace relative to the shielding mechanism, so that the shielding plate of the shielding mechanism contacts the upper surface of the bonding substrate. When the shielding plate contacts the upper surface of the bonding substrate, the diffusion unit will be located around the bonding substrate and output a precursor to the side surface of the bonding substrate to form a protective layer on the side surface of the bonding substrate.

Description

Technical Field

[0001] The present invention relates to an atomic layer deposition machine suitable for a bonded substrate, mainly used to form a protective layer on the side surface of the bonded substrate. Background Art

[0002] Semiconductor devices mainly perform processes such as oxidation, lithography, etching, ion implantation, and thin film deposition on a silicon substrate to form electronic components on the substrate. After completing the above steps, a semiconductor packaging process will be continued, mainly cutting the substrate to form a plurality of dies. Then the dies are placed on a conductive frame, and wire bonding and encapsulation are performed.

[0003] With the continuous progress of integrated circuit technology, electronic products are developing towards the trends of being thin, light, short, small, high-performance, high-reliability, and intelligent. A new generation of semiconductor packaging technology has begun to align a plurality of dies on two substrates, and stack and bond (wafer bonding) the two substrates to form a bonded substrate.

[0004] Then, a low temperature thermal treatment, a high precision back thinning, a cleaning, and a TSV process are sequentially performed on the bonded substrate. In the above processes, the bonding area of the two substrates may be damaged, especially in the wet etching process during the TSV process, reducing the yield of the semiconductor process. Summary of the Invention

[0005] As described in the prior art, when the conventional bonded substrate is subjected to the TSV process, the side surface of the bonded substrate may contact the etching solution, damaging the structure of the two substrates in the bonding area. Therefore, the present invention proposes a novel atomic layer deposition machine suitable for a bonded substrate, which can perform atomic layer deposition on the side surface of the bonded substrate, and form a protective layer on the side surface of the bonded substrate and the bonding area of the two substrates, effectively avoiding the etching solution contacting the side surface and the bonding area of the bonded substrate during the TSV process, thereby damaging the structure of the substrates in the bonding area.

[0006] An object of the present invention is to provide an atomic layer deposition machine suitable for a bonded substrate, mainly including a reaction chamber, a carrier plate, a shielding mechanism, and a diffusion unit, wherein the carrier plate, a part of the shielding mechanism, and the diffusion unit are located in the accommodation space of the reaction chamber. The carrier plate includes a carrying surface for carrying a bonded substrate, wherein the bonded substrate is a stack of a first substrate and a second substrate, and includes a first surface, a second surface, and at least one side surface.

[0007] The shielding mechanism includes a shielding plate and a connecting rod. The connecting rod connects the reaction chamber and the shielding plate, and the shielding plate faces the bearing surface of the bearing plate. The bearing plate is used to bear the first surface of the bonding substrate and drive the carried bonding substrate to displace relative to the shielding mechanism, so that the shielding plate of the shielding mechanism contacts and shields the second surface of the bonding substrate, while the side surface of the bonding substrate will not be shielded by the bearing plate and the shielding plate.

[0008] When the bearing plate and the shielding plate respectively contact the first surface and the second surface of the bonding substrate, the diffusion unit will be located around the side surface of the bonding substrate and output at least one precursor towards the side surface of the bonding substrate to form a protective layer on the side surface of the bonding substrate.

[0009] Specifically, the side surface of the bonding substrate has a bonding area, where the bonding area is the bonding area of the first substrate and the second substrate on the side surface, and an annular recess will be formed on the side surface of the bonding substrate. The atomic layer deposition machine applicable to the bonding substrate described in the present invention is mainly used to form a protective layer on the bonding area of the bonding substrate to prevent the etching solution from etching the concave bonding area.

[0010] The shielding mechanism described in the present invention can apply a very small pressure to the bonding substrate carried by the bearing plate through the shielding plate by the force of gravity, the elastic force of the spring or the force provided by the motor, so that the shielding plate truly contacts and shields the upper surface of the bonding substrate.

[0011] In addition, the diffusion unit can be annular, where the inlet pipe of the diffusion unit surrounds the shielding plate, the bonding substrate and / or the bearing plate, so that the inlet pipe can output the precursor towards the side surface and the bonding area of the bonding substrate to facilitate the formation of a protective layer on the side surface and the bonding area of the bonding substrate.

[0012] To achieve the above object, the present invention provides an atomic layer deposition machine applicable to a bonding substrate, including: a reaction chamber including an accommodation space; a bearing plate located in the accommodation space and including a bearing surface for bearing a bonding substrate, where the bonding substrate includes a stack of a first substrate and a second substrate and has a first surface, a second surface and at least one side surface, where the side surface is located between the first surface and the second surface, and the bearing plate is used to shield the first surface of the bonding substrate; a shielding mechanism including: a shielding plate located in the accommodation space and facing the bearing surface of the bearing plate; a connecting rod connecting the reaction chamber and the shielding plate, where the shielding plate is used to shield the second surface of the bonding substrate placed on the bearing plate; and a diffusion unit arranged around the shielding plate and fluidly connected to the accommodation space of the reaction chamber, where the diffusion unit is used to transport at least one precursor towards the side surface of the bonding substrate to form a protective layer on the side surface of the bonding substrate.

[0013] The atomic layer deposition machine applicable to a bonding substrate, wherein the diffusion unit includes a first annular conveying pipeline and a plurality of first inlet pipes. The first annular conveying pipeline is located around the baffle, and the first inlet pipes are fluidly connected to the first annular conveying pipeline. The first inlet pipes face the baffle or below the baffle to convey a precursor to the side surface of the bonding substrate.

[0014] The atomic layer deposition machine applicable to a bonding substrate, wherein the diffusion unit includes a second annular conveying pipeline and a plurality of second inlet pipes. The second annular conveying pipeline is arranged outside the first annular conveying pipeline. The second annular conveying pipeline conveys a non-reactive gas into the accommodation space via the second inlet pipes.

[0015] The atomic layer deposition machine applicable to a bonding substrate includes a lifting mechanism connected to the carrier plate to drive the carrier plate to displace relative to the baffle and adjust the distance between the carrier plate and the baffle.

[0016] The atomic layer deposition machine applicable to a bonding substrate, wherein the lifting mechanism drives the carrier plate and the bonding substrate close to the baffle, so that the baffle blocks the second surface of the bonding substrate, and a plurality of first inlet pipes are located around the bonding substrate and face the side surface of the bonding substrate.

[0017] The atomic layer deposition machine applicable to a bonding substrate, wherein the shielding mechanism includes a driving motor. The driving motor is connected to and drives the baffle to displace relative to the carrier plate, so that the baffle blocks the second surface of the bonding substrate on the carrier plate.

[0018] The atomic layer deposition machine applicable to a bonding substrate, wherein the reaction chamber has a through hole, and the connecting rod passes through the through hole of the reaction chamber and is connected to the baffle in the accommodation space of the reaction chamber. The connecting rod is used to displace relative to the bearing surface of the carrier plate along the through hole.

[0019] The atomic layer deposition machine applicable to a bonding substrate, wherein the shielding mechanism includes an elastic unit and a stop portion. The stop portion is arranged on the connecting rod, and the elastic unit is located between the stop portion of the connecting rod and the reaction chamber. When the carrier plate drives the bonding substrate to displace towards the baffle and contact the baffle, the elastic unit located between the stop portion and the reaction chamber will deform.

[0020] The atomic layer deposition machine applicable to a bonding substrate, wherein the shielding mechanism includes a heavy object. The heavy object is connected to the connecting rod. When the carrier plate drives the bonding substrate to displace towards the baffle and contact the baffle, the heavy object will exert pressure on the bonding substrate towards the carrier plate via the baffle.

[0021] The described atomic layer deposition machine applicable to a bonding substrate, wherein the baffle includes a flange disposed at an edge region of a surface of the baffle facing the carrier plate, and the baffle contacts the second surface of the bonding substrate on the carrier plate via the flange.

[0022] The beneficial effects of the present invention are as follows: A novel atomic layer deposition machine applicable to a bonding substrate is provided, which can perform atomic layer deposition on the side surface of the bonding substrate and form a protective layer on the side surface of the bonding substrate and the bonding region of the two substrates, effectively avoiding the etching solution from contacting the side surface and the bonding region of the bonding substrate during the through-silicon via process, thereby damaging the structure of each substrate in the bonding region. Description of the Drawings

[0023] Figure 1 It is a schematic cross-sectional view of an embodiment of the atomic layer deposition machine applicable to a bonding substrate according to the present invention.

[0024] Figure 2 It is a schematic cross-sectional view of an embodiment of the atomic layer deposition machine applicable to a bonding substrate according to the present invention for forming a protective layer on the side surface of the bonding substrate.

[0025] Figure 3 It is a schematic cross-sectional view of another embodiment of the atomic layer deposition machine applicable to a bonding substrate according to the present invention for forming a protective layer on the side surface of the bonding substrate.

[0026] Figure 4 It is a schematic cross-sectional view of another embodiment of the atomic layer deposition machine applicable to a bonding substrate according to the present invention.

[0027] Figure 5 It is a schematic cross-sectional view of another embodiment of the atomic layer deposition machine applicable to a bonding substrate according to the present invention.

[0028] Description of the Reference Numerals: 10 - Atomic layer deposition machine applicable to a bonding substrate; 11 - Reaction chamber; 111 - Perforation; 12 - Accommodation space; 13 - Carrier plate; 131 - Carrying surface; 14 - Bonding substrate; 141 - First substrate; 142 - First surface; 143 - Second substrate; 144 - Second surface; 145 - Protective layer; 146 - Side surface; 148 - Bonding region; 15 - Shielding mechanism; 151 - Baffle; 153 - Connecting rod; 1531 - Stopping portion; 155 - Heavy object; 17 - Diffusion unit; 171 - First annular conveying pipeline; 172 - First intake pipe; 173 - Second annular conveying pipeline; 174 - Second intake pipe; 176 - Third intake pipe; 19 - Lifting mechanism; 191 - Motor; 193 - Rod body; 23 - Extension portion; 25 - Shielding mechanism; 251 - Baffle; 2511 - Flange; 255 - Driving motor; 35 - Shielding mechanism; 355 - Stopping portion; 357 - Elastic unit. Detailed Description of the Invention

[0029] Please refer to Figure 1 , which is a schematic cross-sectional view of an embodiment of an atomic layer deposition machine suitable for a bonding substrate according to the present invention. As shown in the figure, the atomic layer deposition machine 10 suitable for a bonding substrate mainly includes a reaction chamber 11, a carrier plate 13, a shielding mechanism 15, and a diffusion unit 17, wherein the reaction chamber 11 includes an accommodation space 12, and the carrier plate 13, a part of the shielding mechanism 15, and the diffusion unit 17 are located in the accommodation space 12.

[0030] The carrier plate 13 includes a carrying surface 131 for carrying a bonding substrate 14. In an embodiment of the present invention, as Figure 2 and Figure 3 shown, the bonding substrate 14 includes a stack of a first substrate 141 and a second substrate 143, wherein the first substrate 141 and the second substrate 143 can be wafers, and a plurality of electronic components are formed on the wafers through semiconductor processes.

[0031] The first substrate 141 and the second substrate 143 will be aligned first, so that a plurality of electronic components on the first substrate 141 are respectively aligned with a plurality of electronic components on the second substrate 143. The aligned first substrate 141 and second substrate 143 can be sequentially bonded and thinned, and then through-silicon vias (TSVs) are formed on the bonding substrate 14, and conductive materials are filled in the through-silicon vias.

[0032] The bonding substrate 14 has an appearance similar to a disc shape and includes a first surface 142, a second surface 144, and at least one side surface 146, wherein the side surface 146 is located between the first surface 142 and the second surface 144 and connects the first surface 142 and the second surface 144. Specifically, the side surface 146 of the bonding substrate 14 has at least one bonding region 148, wherein the bonding region 148 is a connection region of the first substrate 141 and the second substrate 143 and is an annular recess surrounding the side surface 146 of the bonding substrate 14.

[0033] During the process of forming through-silicon vias on the bonding substrate 14, it may damage the bonding region 148 on the side surface 146 of the bonding substrate 14, causing the edges of the first substrate 141 and the second substrate 143 to separate, thereby affecting the yield of the process. For example, when forming through-silicon vias on the bonding substrate 14 by wet etching, the etching solution may contact the bonding region 148 on the side surface 146 of the bonding substrate 14, causing the first substrate 141 and the second substrate 143 in the bonding region 148 to separate.

[0034] The atomic layer deposition machine 10 applicable to the bonding substrate proposed by the present invention can perform atomic layer deposition on the side surface 146 of the bonding substrate 14 and form a protective layer 145 on the side surface 146 and the bonding region 148 of the bonding substrate 14. For example, the protective layer 145 can be silicon dioxide. By providing the protective layer 145, the etching solution can be prevented from contacting the side surface 146 and / or the bonding region 148 of the bonding substrate 14, and the bonding region 148 of the bonding substrate 14 can be prevented from being etched by the etching solution.

[0035] The shielding mechanism 15 of the atomic layer deposition machine 10 applicable to the bonding substrate according to the present invention faces the bearing surface 131 of the bearing plate 13. When the bonding substrate 14 is placed on the bearing surface 131 of the bearing plate 13, the shielding mechanism 15 will face the bonding substrate 14 on the bearing plate 13. For example, the first surface 142 of the bonding substrate 14 is placed on the bearing surface 131 of the bearing plate 13, and the bearing plate 13 shields the first surface 142 of the bonding substrate 14, while the shielding mechanism 15 will face the second surface 144 of the bonding substrate 14.

[0036] In an embodiment of the present invention, the shielding mechanism 15 includes a shielding plate 151 and a connecting rod 153. The shielding plate 151 is located in the accommodation space 12 and faces the bearing surface 131 of the bearing plate 13 and / or the second surface 144 of the bonding substrate 14. The connecting rod 153 is used to connect the reaction cavity 11 and the shielding plate 151, and the shielding plate 151 and / or the connecting rod 153 can be displaced relative to the bearing plate 13 and / or the reaction cavity 11. For example, the connecting rod 153 can pass through the reaction cavity 11 and connect the shielding plate 151 in the accommodation space 12. The shielding plate 151 is a disc-shaped body and is used to shield the second surface 144 of the bonding substrate 14.

[0037] The bearing plate 13 is connected to a lifting mechanism 19. The lifting mechanism 19 is used to drive the bearing plate 13 to displace relative to the shielding plate 151 in the accommodation space 12 to adjust the distance between the bearing plate 13 and the shielding plate 151 of the shielding mechanism 15. Specifically, the lifting mechanism 19 can include a motor 191 and a rod 193. The motor 191 is connected to and drives the bearing plate 13 to displace through the rod 193. The lifting mechanism 19 is a commonly used mechanism for the atomic layer deposition machine 10 applicable to the bonding substrate, and will not be described in detail here.

[0038] The diffusion unit 17 can be an annular body and is disposed around the shielding plate 151. The diffusion unit 17 is fluidly connected to the accommodation space 12 of the reaction cavity 11. The diffusion unit 17 is used to transport at least one precursor to the side surface 146 of the bonding substrate 14 to form a protective layer 145 on the side surface 146 of the bonding substrate 14.

[0039] Specifically, the diffusion unit 17 may include a first annular delivery pipeline 171 and a plurality of first intake pipes 172. The first annular delivery pipeline 171 is located around the baffle 151, and the first intake pipes 172 connect the first annular delivery pipeline 171 and the accommodation space 12. In addition, the first intake pipes 172 face the baffle 151 or below the baffle 151, and the first annular delivery pipeline 171 can deliver at least one precursor to the accommodation space 12 via the first intake pipes 172.

[0040] The first intake pipes 172 can be inclined relative to the bearing surface 131 of the carrier plate 13 to eject the precursor in the direction of the side surface 146 of the bonding substrate 14.

[0041] In another embodiment of the present invention, the diffusion unit 17 may include a second annular delivery pipeline 173 and a plurality of second intake pipes 174. The second annular delivery pipeline 173 is disposed outside the first annular delivery pipeline 171 in a surrounding manner, and the second intake pipes 174 are fluidly connected to the second annular delivery pipeline 173 and the accommodation space 12. In actual application, a non-reactive gas can be delivered to the second annular delivery pipeline 173, and the second annular delivery pipeline 173 delivers the non-reactive gas into the accommodation space 12 via the second intake pipes 174. For example, the non-reactive gas can be nitrogen or argon.

[0042] The second intake pipes 174 are approximately perpendicular to the extension line of the bearing surface 131 of the carrier plate 13, and the extension line of the second intake pipes 174 is located radially outside the carrier plate 13. When the second annular delivery pipeline 173 delivers the non-reactive gas into the accommodation space 12 via the second intake pipes 174, an air wall will be formed radially outside the carrier plate 13 to confine the precursor within the air wall.

[0043] In actual application, the lifting mechanism 19 can drive the carrier plate 13 and the bonding substrate 14 to approach the shielding mechanism 15, so that the baffle 151 of the shielding mechanism 15 contacts and shields the second surface 144 of the bonding substrate 14 placed on the carrier plate 13. At this time, the diffusion unit 17 and / or the first intake pipes 172 will be located around the bonding substrate 14, and the first intake pipes 172 will face the side surface 146 of the bonding substrate 14 and output the precursor to the side surface 146 of the bonding substrate 14 to deposit a protective layer 145 on the surface of the side surface 146 and the bonding area 148 of the bonding substrate 14.

[0044] In another embodiment of the present invention, the diffusion unit 17 may include a plurality of third intake pipes 176, wherein the third intake pipes 176 are fluidly connected to the first annular delivery pipeline 171 and the accommodation space 12. Specifically, the third intake pipes 176 face the side surface 146 of the bonding substrate 14, and the first annular delivery pipeline 171 transports the precursor to the side surface 146 of the bonding substrate 14 via the third intake pipes 176. For example, the inclination angle of the third intake pipes 176 is different from that of the first intake pipes 172 to increase the range of the precursor transported to the accommodation space 12.

[0045] In addition, after the shielding plate 151 contacts the second surface 144 of the bonding substrate 14, the lifting mechanism 19 may drive the carrier plate 13 and the bonding substrate 14 to continue to displace in the direction of the shielding mechanism 15, and drive or push the shielding plate 151 to slightly displace upward to ensure that the shielding plate 151 contacts and shields the second surface 144 of the bonding substrate 14. Since the first surface 142 and the second surface 144 of the bonding substrate 14 are respectively shielded by the carrier plate 13 and the shielding plate 151, the protective layer 145 is only formed on the side surface 146 of the bonding substrate 14.

[0046] In practical applications, the area of the shielding plate 151 may be slightly smaller than the area of the bonding substrate 14, and the shielding plate 151 only contacts and shields a part of the second surface 144 of the bonding substrate 14, while a part of the second surface 144 near the outer edge of the bonding substrate 14 is not shielded by the shielding plate 151. When the area of the shielding plate 151 is slightly smaller than the second surface 144 of the bonding substrate 14, the protective layer 145 formed on the side surface 146 of the bonding substrate 14 extends to a part of the second surface 144 of the bonding substrate 14, as Figure 2 shown.

[0047] On the contrary, if the area of the shielding plate 151 is equal to or larger than the area of the bonding substrate 14, the shielding plate 151 completely shields the second surface 144 of the bonding substrate 14, such that the protective layer 145 is restricted to the side surface 146 of the bonding substrate 14, as Figure 3 shown.

[0048] In an embodiment of the present invention, a perforation 111 may be provided at the top of the reaction chamber 11, and the connecting rod 153 passes through the perforation 111 of the reaction chamber 11 and can displace or expand and contract along the perforation 111 relative to the top of the reaction chamber 11 and / or the bearing surface 131 of the carrier plate 13. A stopping portion 1531 may be provided on the connecting rod 153, and the stopping portion 1531 is provided on the surface of the connecting rod 153. The stopping portion 1531 is located outside the accommodation space 12, and the stopping portion 1531 is slightly larger than the perforation 111 provided at the top of the reaction chamber 11.

[0049] When the baffle 151 does not contact the bonding substrate 14, the shielding mechanism 15 will be displaced towards the carrier plate 13 under the action of gravity until the abutting portion 1531 on the connecting rod 153 abuts against the reaction cavity 11. When the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to continue to be displaced towards the shielding mechanism 15, it will drive the baffle 151 and the connecting rod 153 to be slightly displaced upwards.

[0050] In an embodiment of the present invention, as Figure 1 shown, the shielding mechanism 15 may also include a heavy object 155, wherein the heavy object 155 is connected to the connecting rod 153. When the baffle 151 does not contact the bonding substrate 14, the heavy object 155 will be affected by gravity, and drive the baffle 151 to be displaced towards the carrier plate 13, and press against the second surface 144 of the bonding substrate 14 towards the carrier plate 13. Since the connecting rod 153 and the baffle 151 themselves have a certain weight and can press against the bonding substrate 14 on the carrier plate 13, the heavy object 155 is not an essential component of the shielding mechanism 15.

[0051] In another embodiment of the present invention, as Figure 4 shown, the shielding mechanism 25 includes a baffle 251, a connecting rod 153 and a driving motor 255, wherein the driving motor 255 is connected to the baffle 251 through the connecting rod 153. The driving motor 255 is fixed on the reaction cavity 11 and drives the baffle 251 to be displaced relative to the carrier plate 13 through the connecting rod 153, for example, approaching or moving away from the carrier plate 13, so that the baffle 251 shields the second surface 144 of the bonding substrate 14.

[0052] In actual application, after the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to rise to the positioning, the driving motor 255 will drive the connecting rod 153 and the baffle 251 to approach the carrier plate 13 until the baffle 251 contacts and shields the second surface 144 of the bonding substrate 14. In different embodiments, according to the thickness of the bonding substrate 14, after the driving motor 255 drives the baffle 251 to be displaced to the default position, the lifting mechanism 19 will drive the carrier plate 13 and the bonding substrate 14 to approach the baffle 251.

[0053] In addition, a flange 2511 is provided on the surface of the baffle 251 facing the carrier plate 13, wherein the flange 2511 can be annular and is arranged in the edge area of the surface of the baffle 251 facing the carrier plate 13. When the baffle 251 shields the second surface 144 of the bonding substrate 14, only the flange 2511 of the baffle 251 will contact the second surface 144 of the bonding substrate 14.

[0054] In an embodiment of the present invention, the carrier plate 13 may include an extension portion 23, where the extension portion 23 may extend along a direction parallel to the carrying surface 131 of the carrier plate 13 to the extension positions of the first intake pipe 172, the second intake pipe 174, and / or the third intake pipe 176. The provision of the extension portion 23 is conducive to gathering the precursors input into the accommodation space 12 by the first intake pipe 172 and the second intake pipe 174 around the bonding substrate 14, and is conducive to forming a protective layer 145 on the side surface 146 of the bonding substrate 14.

[0055] Specifically, the extension portion 23 may be a plate-like body and is placed on the carrying surface 131 of the carrier plate 13. The area of the extension portion 23 is larger than the area of the carrying surface 131, and the carrier plate 13 carries the bonding substrate 14 via the extension portion 23. In different embodiments, a carrier plate 13 with a larger area may also be directly used, where the carrying surface 131 of the carrier plate 13 extends to the extension positions of the first intake pipe 172, the second intake pipe 174, and / or the third intake pipe 176.

[0056] In another embodiment of the present invention, as Figure 5 shown, the shielding mechanism 35 includes a shielding plate 151, a connecting rod 153, a stopping portion 355, and at least one elastic unit 357. The connecting rod 153 connects the shielding plate 151 within the accommodation space 12, and the stopping portion 355 is located outside the accommodation space 12 of the reaction chamber 11 and is connected to the connecting rod 153. The elastic unit 357 is located between the stopping portion 355 and the reaction chamber 11. For example, the elastic unit 357 may be a spring, where the elastic unit 357 is provided outside the accommodation space 12 of the reaction chamber 11 and is sleeved on the connecting rod 153.

[0057] In an embodiment of the present invention, the elastic unit 357 may be a compression spring. When the bonding substrate 14 does not contact the shielding mechanism 15, the stopping portion 355 and the reaction chamber 11 compress the elastic unit 357 between them, and the shielding plate 151 remains static at a fixed position within the accommodation space 12. When the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to contact the shielding plate 151 and drives the shielding plate 151 to move upward, the elastic unit 357 located between the stopping portion 355 and the reaction chamber 11 will deform, for example, recover and elongate.

[0058] In another embodiment of the present invention, the elastic unit 375 may also be a tension spring, where both ends of the elastic unit 375 are respectively fixed to the stopping portion 355 and the reaction chamber 11. When the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to contact the shielding plate 151 and move in the direction of the shielding mechanism 15, the stopping portion 355 and the reaction chamber 11 will stretch the elastic unit 357 between them.

[0059] Since the shielding plate 151 of the present invention is mainly used to shield the second surface 144 of the bonding substrate 14, the weights of the above-mentioned shielding plate 151, connecting rod 153 and heavy object 155 do not need to be too heavy, nor do we need to select an elastic unit 357 with too large elasticity, so as to avoid applying too much force to the bonding substrate 14 during the process of the shielding plate 151 contacting and shielding the bonding substrate 14, which may cause damage to the bonding substrate 14.

[0060] Advantages of the present invention:

[0061] Provide a novel atomic layer deposition machine suitable for bonding substrates, which can perform atomic layer deposition on the side surface of the bonding substrate, and form a protective layer on the side surface of the bonding substrate and the bonding area of the two substrates, which can effectively avoid the etching solution contacting the side surface and the bonding area of the bonding substrate during the through-silicon via process, thereby destroying the structure of each substrate on the bonding area.

[0062] The above is only a preferred embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made according to the shape, structure, features and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

Claims

1. An atomic layer deposition machine suitable for a bonding substrate, characterized in that, Comprising: A reaction chamber, including an accommodating space; A carrier plate, located within the accommodating space, and including a carrying surface for carrying a bonding substrate, wherein the bonding substrate includes a stack of a first substrate and a second substrate, and has a first surface, a second surface, and at least one side surface, where the side surface is located between the first surface and the second surface, and the carrier plate is used to shield the first surface of the bonding substrate; A shielding mechanism, including: A shielding plate, located within the accommodating space and facing the carrying surface of the carrier plate; A connecting rod, connecting the reaction chamber and the shielding plate, wherein the shielding plate is used to shield the second surface of the bonding substrate placed on the carrier plate; and A diffusion unit, arranged around the shielding plate and fluidly connected to the accommodating space of the reaction chamber, wherein the diffusion unit is used to convey at least one precursor towards the side surface of the bonding substrate to form a protective layer on the side surface of the bonding substrate; Wherein, the shielding plate applies a force to the bonding substrate carried by the carrier plate, and the shielding plate contacts and shields the second surface of the bonding substrate.

2. The atomic layer deposition machine applicable to a bonding substrate according to claim 1, wherein Wherein the diffusion unit includes a first annular conveying pipeline and a plurality of first inlet pipes, the first annular conveying pipeline is located around the shielding plate, and the first inlet pipes are fluidly connected to the first annular conveying pipeline, wherein the first inlet pipes face the shielding plate or below the shielding plate for conveying the precursor to the side surface of the bonding substrate.

3. The atomic layer deposition machine applicable to a bonding substrate according to claim 2, wherein Wherein the diffusion unit includes a second annular conveying pipeline and a plurality of second inlet pipes, the second annular conveying pipeline is arranged outside the first annular conveying pipeline, and the second annular conveying pipeline conveys a non-reactive gas into the accommodating space through the second inlet pipes.

4. The atomic layer deposition machine applicable to a bonding substrate according to claim 2, wherein Including a lifting mechanism connected to the carrier plate for driving the carrier plate to displace relative to the shielding plate and adjusting the distance between the carrier plate and the shielding plate.

5. The atomic layer deposition machine applicable to a bonding substrate according to claim 4, wherein, Wherein the lifting mechanism drives the carrier plate and the bonding substrate to approach the shielding plate, such that the shielding plate shields the second surface of the bonding substrate, and the plurality of first inlet pipes will be located around the bonding substrate and face the side surface of the bonding substrate.

6. The atomic layer deposition machine suitable for bonding substrates according to claim 1, wherein Wherein the shielding mechanism includes a driving motor, and the driving motor is connected to and drives the shielding plate to displace relative to the carrier plate through the connecting rod, such that the shielding plate shields the second surface of the bonding substrate on the carrier plate.

7. The atomic layer deposition machine applicable to a bonding substrate according to claim 1, characterized in that, Wherein the reaction chamber has a through hole, and the connecting rod passes through the through hole of the reaction chamber and is connected to the shielding plate within the accommodating space of the reaction chamber, and the connecting rod is used to displace along the through hole relative to the carrying surface of the carrier plate.

8. The atomic layer deposition machine applicable to a bonding substrate according to claim 7, wherein Wherein the shielding mechanism includes an elastic unit and a stop portion, the stop portion is arranged on the connecting rod, and the elastic unit is located between the stop portion of the connecting rod and the reaction chamber. When the carrier plate drives the bonding substrate to displace towards the shielding plate and contacts the shielding plate, the elastic unit located between the stop portion and the reaction chamber will deform.

9. The atomic layer deposition machine applicable to a bonding substrate according to claim 7, wherein, Wherein the shielding mechanism includes a heavy object, the heavy object is connected to the connecting rod, and when the carrier plate drives the bonding substrate to displace towards the shielding plate and contacts the shielding plate, the heavy object presses the bonding substrate towards the carrier plate via the shielding plate.

10. The atomic layer deposition machine applicable to a bonding substrate according to claim 1, wherein Wherein the shielding plate includes a flange, which is arranged in an edge area of a surface of the shielding plate facing the carrier plate, and the shielding plate contacts the second surface of the bonding substrate on the carrier plate via the flange.

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