Display panel and display device

Abstract

The present application discloses a display panel and a display device, wherein the display panel includes an opposing substrate, a liquid crystal layer and an array substrate, wherein the liquid crystal layer is arranged between the opposing substrate and the array substrate; the array substrate includes a base, a first inorganic film layer and a conductive layer, wherein the first inorganic film layer is arranged on the base, and the refractive index of the first inorganic film layer is greater than or equal to 1.4 and less than or equal to 1.6; the conductive layer is arranged on the base, and the conductive layer is adjacent to the first inorganic film layer; without changing the film layer structure of the array substrate, the present application reduces the refractive index of the conductive layer by setting the material of the conductive layer to include indium tin oxide and a doping material, wherein the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of Group IIA metal elements, Group IIIA metal elements, Group IIB metal elements, Group IIIB metal elements or lanthanide elements, thereby improving the transmittance of the array substrate.

Description

Technical Field

[0001] The present application relates to the field of display, and in particular to a display panel and a display device. Background Art

[0002] With the widespread development and in-depth application of liquid crystal display (LCD) technology, the pursuit of displays with higher resolution has become one of the current trends in the development of display technology. As the pixel resolution of LCDs becomes higher and higher, their pixel density increases, resulting in a decrease in screen transmittance. In the existing technology, when the brightness of the LCD is insufficient, the backlight current is usually increased to increase the display brightness, resulting in higher and higher power consumption of the LCD. Therefore, it is imperative to improve the transmittance of the LCD.

[0003] In traditional LCD display devices, the backlight source usually enters from the TFT array substrate side and exits from the color film substrate side. For the array substrate of TFT-LCD, the multi-layer film structure has the greatest impact on the light efficiency. When the refractive indices of adjacent film layers are different, the backlight source has a higher light reflection phenomenon at the contact interface of adjacent film layers in the array substrate, thereby reducing the backlight source's transmittance. Summary of the Invention

[0004] Embodiments of the present application provide a display panel and a display device to improve the technical problem of low light extraction efficiency of current display panels.

[0005] To achieve the above functions, the technical solutions provided in this embodiment are as follows:

[0006] An embodiment of the present application provides a display panel, comprising an opposing substrate, a liquid crystal layer, and an array substrate, wherein the liquid crystal layer is disposed between the opposing substrate and the array substrate;

[0007] The array substrate includes:

[0008] substrate;

[0009] a first inorganic film layer disposed on the substrate, wherein the refractive index of the first inorganic film layer is greater than or equal to 1.4 and less than or equal to 1.6;

[0010] a conductive layer disposed on the substrate, the conductive layer being adjacent to the first inorganic film layer;

[0011] The material of the conductive layer includes indium tin oxide and a doping material, the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of Group IIA metal elements, Group IIIA metal elements, Group IIB metal elements, Group IIIB metal elements or lanthanide elements.

[0012] In the display panel provided in the embodiment of the present application, the material of the conductive layer is a ternary oxide composed of indium oxide, tin oxide and a first metal oxide, wherein the chemical formula of the ternary oxide is In x Sn y A z O, wherein A is one of magnesium, yttrium, gallium, zinc, aluminum or lanthanide elements, wherein x, y and z are all greater than 0.

[0013] In the display panel provided in the embodiment of the present application, in the In x Sn y A z In O, In atoms account for 70% to 95% of the total metal atoms, Sn atoms account for 5% to 30% of the total metal atoms, and A atoms account for 1% to 20% of the total metal atoms.

[0014] In the display panel provided in the embodiment of the present application, the material of the conductive layer is a quaternary oxide composed of indium oxide, tin oxide, a first metal oxide and a second metal oxide, wherein the chemical formula of the quaternary oxide is In x Sn y A z B w O, A is one of magnesium or zinc, B is one of gallium, yttrium, aluminum or lanthanum, wherein x, y, z and w are all greater than 0.

[0015] In the display panel provided in the embodiment of the present application, in the In x Sn y A z B w In O, In atoms account for 70% to 95% of the total metal atoms, Sn atoms account for 5% to 30% of the total metal atoms, A atoms account for 1% to 20% of the total metal atoms, and B atoms account for 1% to 20% of the total metal atoms.

[0016] In the display panel provided in the embodiment of the present application, the refractive index of the conductive layer is greater than or equal to 1.13 and less than 1.9.

[0017] In the display panel provided in the embodiment of the present application, the array substrate includes:

[0018] A first metal layer is disposed on the substrate;

[0019] a gate insulating layer, disposed on the substrate and the first metal layer;

[0020] a second metal layer disposed on the gate insulating layer, wherein the second metal layer includes a first electrode;

[0021] a passivation layer, disposed on the second metal layer and the gate insulating layer;

[0022] The first inorganic film layer includes the gate insulating layer and the passivation layer, and the conductive layer includes the first electrode.

[0023] In the display panel provided in the embodiment of the present application, the array substrate includes:

[0024] A first metal layer is disposed on the substrate;

[0025] a gate insulating layer, disposed on the substrate and the first metal layer;

[0026] a first passivation layer, disposed on the gate insulating layer;

[0027] a second metal layer disposed on the first passivation layer, wherein the second metal layer includes a first electrode;

[0028] a second passivation layer, disposed on the first passivation layer and the second metal layer;

[0029] The first inorganic film layer includes the first passivation layer and the second passivation layer, and the conductive layer includes the first electrode.

[0030] In the display panel provided in the embodiment of the present application, the refractive index of the second electrode is greater than the refractive index of the second passivation layer, the refractive index of the second passivation layer is greater than the refractive index of the first electrode, and the refractive index of the first electrode is greater than the refractive index of the first passivation layer.

[0031] An embodiment of the present application provides a display device, comprising a backlight module and any one of the above-mentioned display panels, wherein the backlight module is arranged on the back side of the display panel.

[0032] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a display device, wherein the display panel includes an opposing substrate, a liquid crystal layer and an array substrate, wherein the liquid crystal layer is arranged between the opposing substrate and the array substrate; the array substrate includes a base, a first inorganic film layer arranged on the base, and a conductive layer arranged on the base and the first inorganic film layer, wherein the refractive index of the first inorganic film layer is greater than or equal to 1.4 and less than or equal to 1.6, and the conductive layer is adjacent to the first inorganic film layer; wherein, without changing the film layer structure of the array substrate, this embodiment reduces the refractive index of the conductive layer by setting the material of the conductive layer to include indium tin oxide and a doping material, wherein the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of Group IIA metal elements, Group IIIA metal elements, Group IIB metal elements, Group IIIB metal elements or lanthanide elements, thereby reducing the difference between the refractive index of the first inorganic film layer and the refractive index of the conductive layer, thereby improving the transmittance of the array substrate and improving the light source utilization efficiency of the backlight module of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0034] Figure 1 A schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0035] Figure 2 A first cross-sectional schematic diagram of an array substrate provided in an embodiment of the present application;

[0036] Figure 3 A second cross-sectional schematic diagram of the array substrate provided in an embodiment of the present application;

[0037] Figure 4 This is a schematic diagram of the structure of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0039] The embodiments of the present application provide a display panel and a display device. Detailed descriptions are provided below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0040] Please combine Figures 1 to 4 An embodiment of the present application provides a display panel and a display device, wherein the display panel includes an opposing substrate 20, a liquid crystal layer 30 and an array substrate 10, wherein the liquid crystal layer 30 is disposed between the opposing substrate 20 and the array substrate 10.

[0041] The array substrate 10 includes a substrate 100, a first inorganic film layer 1A and a conductive layer 1B, wherein the first inorganic film layer 1A is arranged on the substrate 100, and the refractive index of the first inorganic film layer 1A is greater than or equal to 1.4 and less than or equal to 1.6, and the conductive layer 1B is arranged on the substrate 100, and the conductive layer 1B is adjacent to the first inorganic film layer 1A; wherein the material of the conductive layer 1B includes indium tin oxide and a doping material, and the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of Group IIA metal elements, Group IIIA metal elements, Group IIB metal elements, Group IIIB metal elements or lanthanide elements.

[0042] It should be noted that, in this embodiment, the technical solution of the present application is described by taking the display panel being a liquid crystal display panel (LCD) and the opposing substrate being a color filter substrate as an example.

[0043] It can be understood that in this embodiment, the material of the conductive layer includes indium tin oxide and a doping material, and the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of the metal elements of Group IIA, Group IIIA, Group IIB, Group IIIB or lanthanide, thereby reducing the refractive index of the conductive layer, thereby reducing the difference between the refractive index of the first inorganic film layer and the refractive index of the conductive layer, thereby improving the transmittance of the array substrate and improving the light source utilization efficiency of the backlight module of the display device.

[0044] In one embodiment, please combine Figure 1 and Figure 2 ;in, Figure 2 This is a first cross-sectional schematic diagram of the array substrate provided in an embodiment of the present application.

[0045] In this embodiment, the array substrate 10 includes a base 100 and a first metal layer 200 stacked on the base 100, a gate insulating layer 300, a second metal layer 400, a passivation layer 800 and a third metal layer 600, wherein the gate insulating layer 300 is arranged on the base 100 and the first metal layer 200, the second metal layer 400 includes the first electrode 410, the first electrode 410 is one of the pixel electrode and the common electrode, the passivation layer 800 is arranged on the second metal layer 400 and the gate insulating layer 300, and the third metal layer 600 is arranged on the second metal layer 400. The metal layer 600 includes a second electrode 610, which is the other of a pixel electrode and a common electrode; wherein the first inorganic film layer 1A includes the gate insulating layer 300 and the passivation layer 800, and the conductive layer 1B includes the first electrode 410, and the material of the first electrode 410 includes indium tin oxide and a doping material, and the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of Group IIA metal elements, Group IIIA metal elements, Group IIB metal elements, Group IIIB metal elements or lanthanide elements.

[0046] It should be noted that, in this embodiment, when the first inorganic film layer 1A is the gate insulating layer 300 , the conductive layer 1B is the first electrode 410 directly in contact with the gate insulating layer 300 .

[0047] Furthermore, the material of the first electrode 410 is a ternary oxide composed of indium oxide, tin oxide and a first metal oxide, wherein the chemical formula of the ternary oxide is In x Sn y A zO, wherein A is one of magnesium, yttrium, gallium, zinc, aluminum or lanthanide elements, wherein x, y and z are all greater than 0.

[0048] It should be noted that, in this embodiment, the first electrode 410 and the second electrode 610 can be any combination of a pixel electrode and a common electrode. Specifically, when the first electrode 410 is a pixel electrode, the second electrode 610 is a common electrode; when the first electrode 410 is a common electrode, the second electrode 610 is a pixel electrode. In addition, the array substrate 10 includes a plurality of thin film transistors, and the thin film transistors can be a top gate structure or a bottom gate structure. Specifically, this embodiment will later illustrate the technical solution of the present application by taking the thin film transistor as a bottom gate structure as an example.

[0049] It can be understood that when the thin film transistor is a bottom-gate structure, the array substrate 10 also includes an active layer 500, a source 710, a drain 720 and a first via 01, the active layer 500 is located on the side of the gate insulating layer 300 away from the first metal layer 200, the source 710 and the drain 720 are located on the side of the active layer 500 away from the gate insulating layer 300, the first metal layer 200 includes a gate 210, the passivation layer 800 is located on the source 710, the drain 720, the first electrode 410 and the gate insulating layer 300, and the first via 01 passes through the passivation layer 800; it should be noted that the active layer 500 is arranged corresponding to the gate 210, and the two ends of the active layer 500 are respectively connected to the source 710 and the drain 720.

[0050] It should be noted that this embodiment takes the first electrode 410 as a pixel electrode and the second electrode 610 as a common electrode as an example to illustrate the technical solution of the present application; specifically, one end of the second electrode 610 is connected to the drain 720 through the first via 01.

[0051] The active layer 500 includes but is not limited to an oxide semiconductor layer, the material of the oxide semiconductor layer includes but is not limited to indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO) or indium gallium zinc titanium oxide (IGZTO), and the material of the gate insulating layer 300 includes but is not limited to silicon oxide (SiO X ), the material of the passivation layer 800 includes but is not limited to silicon oxide (SiO X ); Further, the material of the gate insulating layer 300 is preferably silicon oxide (SiOX ), the refractive index of the gate insulating layer 300 is greater than or equal to 1.4 and less than or equal to 1.6, and the material of the passivation layer 800 is preferably silicon oxide (SiO X ), the refractive index of the passivation layer 800 is greater than or equal to 1.4 and less than or equal to 1.6.

[0052] It is understandable that currently, existing liquid crystal display devices include a liquid crystal display panel and a backlight module located on the back of the liquid crystal display panel, wherein the backlight source of the backlight module is usually incident from the array substrate side of the liquid crystal display panel and emitted from the color filter substrate side of the liquid crystal display panel. For existing array substrates, the multi-layer film structure has a greater impact on light efficiency. When the refractive indices of adjacent film layers are different, the backlight source has a higher light reflection phenomenon at the contact interface of adjacent film layers in the array substrate. For example, in an oxide TFT liquid crystal display panel, there is a contact interface between the transparent conductive layer and the insulating layer. The reflectivity of the contact interface, the refractive index of the transparent conductive layer, and the refractive index of the insulating layer satisfy the following relationship:

[0053]

[0054] Among them, R 12 is the reflectivity of the contact interface; n1 is the refractive index of the transparent conductive layer 1B, and n2 is the refractive index of the insulating layer; obviously, reducing the difference in the refractive index of light between adjacent film layers is one of the effective methods to improve the transmittance of the array substrate, but in the existing Oxide TFT liquid crystal display panel, the refractive index of each film layer material of the traditional display panel 1 is fixed, so the light extraction efficiency of the traditional display panel is difficult to change.

[0055] In this embodiment, the material of the first electrode 410 is a ternary oxide composed of indium oxide, tin oxide and a first metal oxide, wherein the chemical formula of the ternary oxide is In x Sn y A z O, A is one of magnesium, yttrium, gallium, zinc, aluminum or lanthanide elements, wherein x, y and z are all greater than 0, thereby reducing the refractive index of the first electrode 410, thereby reducing the difference between the refractive index of the gate insulating layer 300 and the refractive index of the first electrode 410, thereby improving the transmittance of the array substrate 10.

[0056] Specifically, in the x Sn y A zIn O, In atoms account for 70% to 95% of the total metal atoms, Sn atoms account for 5% to 30% of the total metal atoms, and A atoms account for 1% to 20% of the total metal atoms; wherein, the A is preferably zinc element, and the zinc atoms account for 1% to 20% of the total metal atoms. It should be noted that in this embodiment, the A atoms account for 1% to 20% of the total metal atoms, thereby avoiding damage to the transparent conductive properties of indium oxide (In2O3) after the addition of the doping material.

[0057] In this embodiment, the refractive index of the conductive layer 1B is greater than or equal to 1.13 and less than 1.9, that is, the refractive index of the first electrode 410 is greater than or equal to 1.13 and less than 1.9; wherein the refractive index of the first electrode 410 is preferably one of 1.2, 1.3, 1.4, 1.5, 1.6, 1.7 or 1.8.

[0058] In this embodiment, the technical solution of the present application is illustrated by taking the first contact surface 411 between the first electrode 410 and the gate insulating layer 300 as an example. The reflectivity of the first contact surface 411, the refractive index of the first electrode 410, and the refractive index of the gate insulating layer 300 satisfy the following relationship:

[0059]

[0060] Among them, R ab is the reflectivity of the first contact surface 411; n a is the refractive index of the first electrode 410, n b is the refractive index of the gate insulating layer 300 .

[0061] It should be noted that, in combination with the above-mentioned relational formula (1), this embodiment takes the existing oxide TFT liquid crystal display panel, where the transparent conductive layer is a pixel electrode, as an example to illustrate the technical solution of the present application. It can be understood that in the existing oxide TFT liquid crystal display panel, the pixel electrode material is usually indium tin oxide (ITO) or indium zinc oxide (IZO), whose refractive index is greater than or equal to 1.9 and less than or equal to 2.1, and the material of the insulating layer is silicon oxide (SiO X ), the refractive index of the insulating layer is greater than or equal to 1.4 and less than or equal to 1.6, and the contact interface has a first reflectivity n 12 .

[0062] Based on the above, combined with the above relationship (2), in this embodiment, the refractive index of the first electrode 410 is greater than or equal to 1.13 and less than 1.9, the refractive index of the gate insulating layer 300 is greater than or equal to 1.4 and less than or equal to 1.6, and the first contact surface has a second reflectivity n abObviously, in this embodiment, the material of the first electrode 410 is set to be a ternary oxide composed of indium oxide, tin oxide and a first metal oxide, wherein the chemical formula of the ternary oxide is In x Sn y A z O, A is one of magnesium, yttrium, gallium, zinc, aluminum or lanthanide elements, wherein x, y and z are all greater than 0, thereby reducing the refractive index of the first electrode 410, thereby reducing the difference between the refractive index of the gate insulating layer 300 and the refractive index of the first electrode 410, thereby improving the transmittance of the array substrate 10.

[0063] Furthermore, in this embodiment, the refractive index of the second electrode 610 is greater than the refractive index of the passivation layer 800, the refractive index of the passivation layer 800 is greater than the refractive index of the first electrode 410, and the refractive index of the first electrode 410 is greater than the refractive index of the gate insulating layer 300, so that the backlight source is incident from the optically sparse medium to the optically dense medium in the array substrate 10, thereby reducing the reflected light energy and reducing the reflectivity of the contact interface of the backlight source and adjacent film layers in the array substrate 10, thereby improving the penetration of the backlight source in the array substrate 10.

[0064] In another embodiment, the material of the conductive layer 1B includes indium tin oxide and a doping material, wherein the doping material includes two metal oxides; specifically, the material of the conductive layer 1B is a quaternary oxide consisting of indium oxide, tin oxide, a first metal oxide, and a second metal oxide, wherein the chemical formula of the quaternary oxide is In x Sn y A z B w O, A is one of magnesium or zinc, B is one of gallium, yttrium, aluminum or lanthanum, wherein x, y, z and w are all greater than 0.

[0065] Further, in the In x Sn y A z B w In O, In atoms account for 70% to 95% of the total metal atoms, Sn atoms account for 5% to 30% of the total metal atoms, A atoms account for 1% to 20% of the total metal atoms, and B atoms account for 1% to 20% of the total metal atoms.

[0066] It can be understood that in this embodiment, the material of the conductive layer 1B is a quaternary oxide composed of indium oxide, tin oxide, a first metal oxide and a second metal oxide, wherein the chemical formula of the quaternary oxide is In x Sn y Az B w O, A is one of magnesium or zinc, and B is one of gallium, yttrium, aluminum or lanthanum, wherein x, y, z and w are all greater than 0, thereby reducing the refractive index of the conductive layer, thereby reducing the difference between the refractive index of the first inorganic film layer and the refractive index of the conductive layer, thereby improving the transmittance of the array substrate and improving the light source utilization efficiency of the backlight module of the display device.

[0067] In one embodiment, please combine Figure 1 and Figure 3 ,in, Figure 3 This is a schematic diagram of a second structure of an array substrate provided in an embodiment of the present application. In this embodiment, the structure of the array substrate is similar to / identical to the first structure of the array substrate provided in the above embodiment. For details, please refer to the description of the array substrate in the above embodiment, which will not be repeated here. The only difference between the two is:

[0068] In this embodiment, the array substrate 10 includes a base 100 and a first metal layer 200, a gate insulating layer 300, a first passivation layer 810, a second metal layer 400, a second passivation layer 820 and a third metal layer 600 stacked on the base 100, wherein the gate insulating layer 300 is arranged on the base 100 and the first metal layer 200, the first passivation layer 810 is arranged on the gate insulating layer 300, the second metal layer 400 includes a first electrode 410, the first electrode 410 is one of a pixel electrode and a common electrode, the second passivation layer 820 is arranged on the first passivation layer 810 and the second metal layer 400, the third metal layer 600 includes a second electrode 610, the second electrode 610 is the other of the pixel electrode and the common electrode; wherein the first inorganic film layer 1A includes the first passivation layer 810 and the second passivation layer 820, and the conductive layer 1B includes the first electrode 410.

[0069] It should be noted that, in this embodiment, when the first inorganic film layer 1A is the first passivation layer 810 , the conductive layer 1B is the first electrode 410 directly in contact with the first passivation layer 810 .

[0070] In this embodiment, the first via hole 01 sequentially penetrates the second passivation layer 820 and the first via hole 01, one end of the second electrode 610 is connected to the drain electrode 720 through the first via hole 01, the active layer 500 includes but is not limited to an oxide semiconductor layer, the material of the oxide semiconductor layer includes but is not limited to indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO) or indium gallium zinc titanium oxide (IGZTO), the material of the first passivation layer 810 includes but is not limited to silicon oxide (SiO X ), the material of the second passivation layer 820 is but not limited to silicon oxide (SiO X ); Further, the material of the first passivation layer 810 is preferably silicon oxide (SiO X ), the refractive index of the first passivation layer 810 is greater than or equal to 1.4 and less than or equal to 1.6, and the material of the second passivation layer 820 is preferably silicon oxide (SiO X ), the refractive index of the second passivation layer 820 is greater than or equal to 1.4 and less than or equal to 1.6.

[0071] It is understood that, in this embodiment, the material of the first electrode 410 is set to be a ternary oxide consisting of indium oxide, tin oxide and a first metal oxide, wherein the chemical formula of the ternary oxide is In x Sn y A z O, A is one of magnesium, yttrium, gallium, zinc, aluminum or lanthanide, wherein x, y, z and w are all greater than 0, thereby reducing the refractive index of the first electrode 410, thereby reducing the difference between the refractive index of the first passivation layer 810 and the refractive index of the first electrode 410, thereby improving the transmittance of the array substrate 10.

[0072] Please combine Figure 1 and Figure 4 ; wherein, Figure 4 This is a schematic diagram of the structure of a display device provided in an embodiment of the present application.

[0073] This embodiment provides a display device 2 , which includes a backlight module 2A and the display panel 1 described in any of the above embodiments. The backlight module 2A is disposed on the back of the display panel 1 .

[0074] It can be understood that the display panel 1 has been described in detail in the above embodiments and will not be repeated here; in this embodiment, by setting the material of the conductive layer 1B to include indium tin oxide and a doping material, the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of the metal elements of Group IIA, Group IIIA, Group IIB, Group IIIB or lanthanide, thereby reducing the refractive index of the conductive layer 1B, thereby reducing the difference between the refractive index of the first inorganic film layer 1A and the refractive index of the conductive layer 1B, thereby improving the transmittance of the array substrate 10 and improving the light source utilization efficiency of the backlight module of the display device 2.

[0075] In specific applications, the display device 2 can be a display screen of a smart phone, tablet computer, laptop computer, smart bracelet, smart watch, smart glasses, smart helmet, desktop computer, smart TV or digital camera, and can even be used on electronic devices with flexible display screens.

[0076] In summary, the embodiments of the present application provide a display panel and a display device, wherein the display panel includes an opposing substrate, a liquid crystal layer and an array substrate, wherein the liquid crystal layer is arranged between the opposing substrate and the array substrate; the array substrate includes a base, a first inorganic film layer arranged on the base, and a conductive layer arranged on the base and the first inorganic film layer, wherein the refractive index of the first inorganic film layer is greater than or equal to 1.4 and less than or equal to 1.6, and the conductive layer is adjacent to the first inorganic film layer; wherein, without changing the film layer structure of the array substrate, this embodiment reduces the refractive index of the conductive layer by setting the material of the conductive layer to include indium tin oxide and a doping material, wherein the doping material includes at least one metal oxide, and the metal element in the metal oxide is selected from one of Group IIA metal elements, Group IIIA metal elements, Group IIB metal elements, Group IIIB metal elements or lanthanide elements, thereby reducing the difference between the refractive index of the first inorganic film layer and the refractive index of the conductive layer, thereby improving the transmittance of the array substrate and improving the light source utilization efficiency of the backlight module of the display device.

[0077] The above is a detailed introduction to a display panel and a display device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: The display panel includes an opposing substrate, a liquid crystal layer and an array substrate, wherein the liquid crystal layer is arranged between the opposing substrate and the array substrate; The array substrate includes: substrate; a first inorganic film layer disposed on the substrate, wherein the refractive index of the first inorganic film layer is greater than or equal to 1.4 and less than or equal to 1.6; a conductive layer disposed on the substrate, the conductive layer being adjacent to the first inorganic film layer, the refractive index of the conductive layer being greater than or equal to 1.13 and less than 1.9, and the material of the conductive layer being a ternary oxide or a quaternary oxide; Wherein, the chemical formula of the ternary oxide is In x Sn y A z O, wherein A is one of magnesium, yttrium, gallium, zinc, aluminum or lanthanide, and x, y and z are all greater than 0; the chemical formula of the quaternary oxide is In x Sn y A z B w O, wherein A is one of magnesium and zinc, B is one of gallium, yttrium, aluminum and lanthanum, and x, y, z and w are all greater than 0.

2. The display panel according to claim 1, wherein: In the x Sn y A z In O, In atoms account for 70%~95% of the total metal atoms, Sn atoms account for 5%~30% of the total metal atoms, and A atoms account for 1%~20% of the total metal atoms.

3. The display panel according to claim 1, wherein: In the x Sn y A z B w In O, In atoms account for 70%~95% of the total metal atoms, Sn atoms account for 5%~30% of the total metal atoms, A atoms account for 1%~20% of the total metal atoms, and B atoms account for 1%~20% of the total metal atoms.

4. The display panel according to any one of claims 1 to 3, wherein: The array substrate includes: A first metal layer is disposed on the substrate; a gate insulating layer, disposed on the substrate and the first metal layer; a second metal layer disposed on the gate insulating layer, wherein the second metal layer includes a first electrode; a passivation layer, disposed on the second metal layer and the gate insulating layer; The first inorganic film layer includes the gate insulating layer and the passivation layer, and the conductive layer includes the first electrode.

5. The display panel according to any one of claims 1 to 3, wherein: The array substrate includes: A first metal layer is disposed on the substrate; a gate insulating layer, disposed on the substrate and the first metal layer; a first passivation layer, disposed on the gate insulating layer; a second metal layer disposed on the first passivation layer, wherein the second metal layer includes a first electrode; a second passivation layer, disposed on the first passivation layer and the second metal layer; a third metal layer, disposed on the passivation layer, wherein the third metal layer includes a second electrode; The first inorganic film layer includes the first passivation layer and the second passivation layer, and the conductive layer includes the first electrode.

6. The display panel according to claim 5, wherein: The refractive index of the second electrode is greater than that of the second passivation layer, the refractive index of the second passivation layer is greater than that of the first electrode, and the refractive index of the first electrode is greater than that of the first passivation layer.

7. A display device, characterized in that: The display device includes a backlight module and a display panel according to any one of claims 1 to 6, wherein the backlight module is arranged on the back side of the display panel.

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