A double-sided heat dissipation power module and a preparation method thereof

Abstract

The application discloses a double-sided heat dissipation power module and a preparation method thereof, and relates to the technical field of semiconductor power modules. The double-sided heat dissipation power module comprises a conductive structure, the conductive structure comprises a conductive layer and at least two power chips arranged on the surface of the conductive layer, the power chips are arranged in the same layer at intervals, the wiring ends of the power chips are connected with the conductive layer in correspondence through connectors, and the two sides of the conductive structure are sequentially provided with heat-conducting insulating layers and heat exchangers. The material of the heat-conducting insulating layer is thermoplastic material. The double-sided heat dissipation power module and the preparation method thereof can improve the heat dissipation capacity of the double-sided heat dissipation power module and reduce the assembly difficulty.

Description

Technical Field

[0001] This application relates to the field of semiconductor power module technology, and more specifically, to a double-sided heat dissipation power module and its fabrication method. Background Technology

[0002] A power module is a modular assembly of high-power semiconductor devices packaged together according to specific functional combinations. Power modules can perform different functions depending on the packaged semiconductor components and are widely used in scenarios requiring power conversion, such as industrial frequency converters, inverters, and automotive motor controllers. Power semiconductor devices are bonded to a ceramic or copper substrate using connecting materials (usually soldering or metal sintering). During operation, power semiconductor devices generate heat loss. If the heat generated is too high and cannot dissipate quickly enough into the surrounding medium, the device will fail due to overheating. Therefore, thermal management of semiconductor power modules is crucial to both module performance and cost. To prevent overheating of power semiconductor devices, heat sinks are typically added to accelerate heat dissipation.

[0003] As power density increases, the heat generated by high-power semiconductor devices is growing, and existing assembly structures of high-power semiconductors and heat sinks are insufficient to meet heat dissipation requirements, necessitating more effective heat dissipation structures. Traditional power modules are divided into two main categories: single-sided and double-sided heat dissipation. Single-sided heat dissipation has significant advantages in mechanical installation and process requirements, but its heat dissipation effect is inferior to that of double-sided heat dissipation structures. Double-sided heat dissipation can provide the highest heat dissipation effect in the smallest size, improving the power density of the system. Current double-sided heat dissipation technology involves attaching a ceramic substrate to the upper and lower surfaces of the chip, respectively, and placing a water-cooled heat sink on the side of the ceramic substrate furthest from the chip. Although this method provides a two-sided heat dissipation path, the heat flow must pass through multiple layers of low thermal conductivity media during the transfer process, resulting in poor chip heat dissipation efficiency. Furthermore, due to the extremely high hardness of the ceramic substrate, high and low tolerances in the chip increase the assembly difficulty. Summary of the Invention

[0004] The purpose of this application is to provide a double-sided heat dissipation power module and its preparation method, which can improve the heat dissipation capacity of the double-sided heat dissipation power module while reducing the assembly difficulty.

[0005] One embodiment of this application provides a double-sided heat dissipation power module, including a conductive structure. The conductive structure includes a conductive layer and at least two power chips disposed on the surface of the conductive layer. The power chips are disposed on the same layer with spacing between them. The terminals of the power chips are respectively connected to the conductive layer through connectors. A thermally conductive insulating layer and a heat exchanger are disposed sequentially on both sides of the conductive structure. The thermally conductive insulating layer is made of a thermoplastic material.

[0006] As one feasible approach, the conductive structure includes two conductive layers, which are respectively disposed on opposite sides of the power chip. The terminal on one side of the power chip is connected to the conductive layer on that side via a connector, and the terminal on the other side of the power chip is connected to the conductive layer on that side via the conductive layer on that side and a connector.

[0007] As one feasible approach, the conductive structure includes a conductive layer, with a power chip disposed on one side of the conductive layer. The terminals of the power chip away from the conductive layer are connected to the conductive layer via a connector. The connector includes a parallel segment parallel to the surface of the power chip and a vertical segment connected to the parallel segment, with a preset angle between the parallel segment and the vertical segment.

[0008] As one feasible approach, the conductive layer includes multiple conductive blocks spaced apart corresponding to the power chip, and the gap between the thermally conductive insulating layers on both sides is filled with thermally conductive material blocks.

[0009] As one feasible approach, the outer periphery of the thermally conductive material block is wrapped with an insulating material layer, the resistivity of which is greater than 10. 6 Ω·m.

[0010] As one feasible approach, the thermally conductive material block is prepared from one of the following materials: copper powder coated with silver; copper powder coated with tin; or copper powder mixed with resin material.

[0011] As an feasible approach, the thickness of the thermally conductive insulating layer is between 20 and 300 μm, and the thermal conductivity of the thermally conductive insulating layer is greater than 3 W / m·K.

[0012] As an feasible approach, the heat exchanger is a liquid-cooled heat exchanger with a thickness between 5 and 50 mm, and the heat exchanger is made of copper or aluminum alloy.

[0013] As an feasible approach, the dimensional variation of the thermally conductive insulation layer in the thickness direction is greater than 10%.

[0014] Another aspect of the embodiments of this application provides a method for preparing the above-mentioned double-sided heat dissipation power module, comprising: providing two heat exchangers and respectively providing a thermally conductive insulating layer on the heat dissipation surface of the two heat exchangers; preparing a conductive material on the thermally conductive insulating layer of one or both heat exchangers, wherein the thermally conductive insulating layer is made of a thermoplastic material; etching the conductive material to form a conductive layer, wherein the conductive layer includes conductive blocks spaced apart; welding a power chip on the conductive block of one thermally conductive insulating layer and welding a connector to the corresponding terminal of the power chip; and fastening another conductive layer or thermally conductive insulating layer to contact the connector so that the heat exchangers are located on both sides of the power chip.

[0015] The beneficial effects of the embodiments of this application include:

[0016] The double-sided heat dissipation power module provided in this application includes a conductive structure, which comprises a conductive layer and at least two power chips disposed on the surface of the conductive layer. The power chips are spaced apart and disposed on the same layer. The terminals of the power chips are respectively connected to the conductive layer via connectors. Thermally conductive insulating layers and heat exchangers are sequentially disposed on both sides of the conductive structure, enabling the double-sided heat dissipation power module to dissipate heat on both sides. The heat generated by the power chips in the conductive structure during operation can be directly connected to the thermally conductive insulating layer through air or connectors. The thermally conductive insulating layer has good thermal conductivity, allowing heat to flow quickly through the insulating layer and be conducted to the heat exchanger. Furthermore, both sides of the conductive structure... The system incorporates a thermally conductive insulating layer and a heat exchanger. During this process, the conductive layer and connectors are typically made of metal, which has excellent thermal conductivity. The thermally conductive insulating layer also possesses good thermal conductivity, thereby improving the heat dissipation capacity of the double-sided heat-dissipating power module. Furthermore, the thermally conductive insulating layer is made of a thermoplastic material. When there are height differences on the upper surfaces of multiple connectors, the thermoplastic nature of the insulating layer allows for height adjustment during power module fabrication by pressing it before it solidifies, thus absorbing these differences and reducing the assembly difficulty of the double-sided heat-dissipating power module. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is one of the structural schematic diagrams of a double-sided heat dissipation power module provided in an embodiment of this application;

[0019] Figure 2 This is a second schematic diagram of a double-sided heat dissipation power module provided in an embodiment of this application;

[0020] Figure 3 This is the third schematic diagram of a double-sided heat dissipation power module provided in the embodiments of this application;

[0021] Figure 4 A flowchart illustrating a method for fabricating a double-sided heat dissipation power module, as provided in an embodiment of this application;

[0022] Figure 5 This is one of the state diagrams for a method of fabricating a double-sided heat dissipation power module provided in an embodiment of this application;

[0023] Figure 6The second state diagram of a method for fabricating a double-sided heat dissipation power module provided in this application embodiment;

[0024] Figure 7 The third state diagram of a method for fabricating a double-sided heat dissipation power module provided in this application embodiment;

[0025] Figure 8 This is the fourth state diagram of a method for fabricating a double-sided heat dissipation power module provided in this application embodiment.

[0026] Icons: 10-Double-sided heat dissipation power module; 11-Conductive structure; 111-Conductive layer; 112-Power chip; 13-Thermal conductive insulation layer; 14-Heat exchanger; 15-Connector; 16-Thermal conductive material block; 17-Insulating material. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0029] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0030] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0031] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] This application provides a double-sided heat dissipation power module 10, such as Figure 1 , Figure 2 As shown, it includes a conductive structure 11, which includes a conductive layer 111 and at least two power chips 112 disposed on the surface of the conductive layer 111. The power chips 112 are disposed at intervals in the same layer, and the terminals of the power chips 112 are respectively connected to the conductive layer 111 through connectors 15. A thermally conductive insulating layer 13 and a heat exchanger 14 are disposed sequentially on both sides of the conductive structure 11. The thermally conductive insulating layer 13 is made of thermoplastic material.

[0033] The double-sided heat dissipation power module 10 provided in this embodiment has a thermally conductive insulating layer 13 and a heat exchanger 14 on both sides of the conductive structure 11. This allows the heat generated inside the conductive structure 11 to be dissipated through the thermally conductive insulating layer 13 and the heat exchanger 14 on both sides, achieving double-sided heat dissipation of the power module. In addition, the thermally conductive insulating layer 13 has good thermal conductivity, so that heat does not need to pass through a medium with low thermal conductivity during the heat transfer process, thereby improving the heat dissipation efficiency of the double-sided heat dissipation power module 10.

[0034] Since the thermally conductive insulating layer 13 is a thermoplastic material, it has a certain degree of plasticity before it is fully cured. During the preparation of the double-sided heat dissipation power module 10, when assembling the conductive structure with the thermally conductive insulating layer 13 before the thermoplastic material is fully cured, a pressing method can be used so that the connector 15 with a higher upper surface can be pressed into the thermally conductive insulating layer 13 to a greater depth, while the connector 15 with a lower upper surface can be pressed into the thermally conductive insulating layer 13 to a less depth. This allows the thermally conductive insulating layer 13 to absorb the height difference of the upper surface of the connector 15.

[0035] The material of the thermally conductive insulating layer 13 is not limited in this embodiment, as long as it is plastic and viscous before curing and can bond the heat exchanger 14 and the conductive layer 111 after curing. For example, it can be a mixture of ceramic powder and resin.

[0036] The double-sided heat dissipation power module 10 provided in this application includes a conductive structure 11. The conductive structure 11 includes a conductive layer 111 and at least two power chips 112 disposed on the surface of the conductive layer 111. The power chips 112 are disposed at intervals in the same layer. The terminals of the power chips 112 are respectively connected to the conductive layer 111 through connectors 15. A thermally conductive insulating layer 13 and a heat exchanger 14 are sequentially disposed on both sides of the conductive structure 11, so that the double-sided heat dissipation power module 10 dissipates heat on both sides. The heat generated by the power chips 112 in the conductive structure 11 when working can be directly connected to the thermally conductive insulating layer 13 through the air or the connectors 15. The thermally conductive insulating layer 13 has good thermal conductivity, so that heat can flow quickly through the thermally conductive insulating layer 13. The heat is conducted to the heat exchanger 14, and both sides of the conductive structure 11 are provided with a thermally conductive insulating layer 13 and a heat exchanger 14. In this process, the conductive layer 111 and the connector 15 are usually made of metal, which has good thermal conductivity. The thermally conductive insulating layer 13 also has good thermal conductivity, thereby improving the heat dissipation capacity of the double-sided heat dissipation power module 10. On the other hand, the thermally conductive insulating layer 13 is made of thermoplastic material. When the power chip 112 has high and low tolerances, since the thermally conductive insulating layer 13 is made of thermoplastic material, during the preparation of the power module, before the thermally conductive insulating layer 13 is cured, its height can be adjusted to absorb the high and low tolerances of the power chip 112, thereby reducing the assembly difficulty of the double-sided heat dissipation power module 10.

[0037] Optional, such as Figure 1 As shown, the conductive structure 11 includes two conductive layers 111, which are respectively disposed on opposite sides of the power chip 112. The terminal on one side of the power chip 112 is connected to the conductive layer 111 on one side through a connector 15, and the terminal on the other side of the power chip 112 is connected to the conductive layer 111 on one side through the conductive layer 111 on the other side and the connector 15.

[0038] Conductive layers 111 are provided on both sides of the power chip 112 to facilitate the lead-out of the terminals of the power chip 112. For example, when the power chip 112 includes two terminals, it can be led out as follows: Figure 1 As shown in section B, the terminals on the upper surface of the power chip 112 can be connected to the conductive layer 111 on the same side via connector 15. The terminals on the lower surface of the power chip 112 can be connected to the conductive layer 111 on the upper surface via the conductive layer 111 on the lower surface and connector 15; or as shown in section B. Figure 1 As shown in area A, the terminals on the upper surface of the power chip 112 are connected to the conductive layer 111 on the same side, and the terminals on the lower surface of the power chip 112 can be led out through the conductive layer 111 on the lower surface.

[0039] It should be noted that the conductive layer 111 includes conductive blocks respectively disposed for multiple power chips 112. For the wiring terminals on the lower surface of the power chip 112, they can be connected to the conductive blocks of the power chip 112 on the upper surface side of the conductive layer 111 through the conductive layer 111 on the lower surface and the connector 15, or they can be connected to other conductive blocks.

[0040] In one possible implementation of the embodiments of this application, such as Figure 2 As shown, the conductive structure 11 includes a conductive layer 111, and the power chip 112 is disposed on one side of the conductive layer 111. The terminal of the power chip 112 away from the conductive layer 111 is connected to the conductive layer 111 through a connector 15. The connector 15 includes a parallel segment parallel to the surface of the power chip 112 and a vertical segment connected to the parallel segment. There is a preset angle between the parallel segment and the vertical segment.

[0041] By setting the connector 15 as a parallel segment and a vertical segment with a preset included angle, the wiring terminals on the upper surface of the power chip 112 can be guided to the conductive layer 111 on the lower surface of the power chip 112. The connection to the wiring terminals on both sides of the power chip 112 can be completed using a single conductive layer 111, thereby reducing the hierarchical structure of the double-sided heat dissipation power module 10 and thus reducing the height of the double-sided heat dissipation power module 10.

[0042] It should be noted that, in order to connect the conductive layer 111 to the outside, such as Figure 1 and Figure 2 As shown, a conductive block and a connector 15 can be provided on the outermost side of the conductive layer 111 to lead out the conductive layer 111, thereby leading out the terminals of the power chip 112.

[0043] Optional, such as Figure 3 As shown, the conductive layer 111 includes a plurality of conductive blocks spaced apart from the power chip 112, and the gap between the thermally conductive insulating layers 13 on both sides is filled with thermally conductive material blocks 16.

[0044] Due to the spaced arrangement of conductive blocks, power chips 112, and connectors 15 corresponding to power chips 112 on both sides, there are multiple gaps between the thermally conductive insulating layers 13 on both sides. These gaps are filled with air. Some of the heat generated by the power chips 112 needs to be conducted to the air and then to the conductive layer 111 or the thermally conductive insulating layer 13. Those skilled in the art should know that the thermal conductivity of air is not very high. In order to further improve the heat dissipation efficiency of the double-sided heat dissipation power module 10, this embodiment fills the gaps between the thermally conductive insulating layers 13 on both sides with thermally conductive material blocks 16. The thermally conductive material blocks 16 have a thermal conductivity better than air, so that the heat generated by the power chips 112 is transferred through the thermally conductive material layer, thereby improving the heat dissipation efficiency of the double-sided heat dissipation power module 10, increasing the heat capacity of the double-sided heat dissipation power module 10, and thus improving the thermal reliability of the double-sided heat dissipation power module 10.

[0045] It should be noted that, Figure 3 It shows the Figure 2 The gap between the two thermally conductive insulating layers 13 of the double-sided heat dissipation power module 10 is filled with a thermally conductive material block 16 to improve the heat dissipation effect of the double-sided heat dissipation power module 10. For Figure 1 The gap between the two thermally conductive insulating layers 13 of the double-sided heat dissipation module can also be filled with thermally conductive material blocks 16 to improve the heat dissipation effect.

[0046] Optionally, the thermally conductive material block 16 is made of one of the following materials: copper powder coated with silver; silver powder; copper powder coated with tin; or copper powder mixed with resin material.

[0047] The silver, tin, and resin materials are in a paste form before high-temperature curing, facilitating the filling of the thermally conductive material. The metals possess excellent thermal conductivity, enabling them to transfer heat effectively. After filling, the material is heated, and in the high-temperature environment, the paste-like filling solidifies to form a thermally conductive material block 16.

[0048] In one possible implementation of the embodiments of this application, such as Figure 3 The outer periphery of the heat-conducting material block 16 shown is wrapped with an insulating material layer 17, the resistivity of which is greater than 10. 6 Ω·m.

[0049] When the thermally conductive material contains metal powder, the metal powder conducts electricity, making the thermally conductive material block 16 conductive. If the thermally conductive material block 16 comes into contact with the conductive layer 111 or the connector 15, it will affect the power supply or signal input and output of the power chip 112. In order to avoid the above situation, the present application embodiment wraps an insulating material layer 17 around the thermally conductive material. The insulating material layer has a large resistivity and is insulating to the outside, thereby preventing the thermally conductive material block 16 from being electrically connected to the connector 15 or the conductive layer 111.

[0050] During the preparation of the double-sided heat dissipation power module 10, molten insulating material 17 can be poured into the space between the thermally conductive insulating layers 13 of the two heat exchangers 14, so that the insulating material 17 contacts and coats the conductive block, power chip 112, connector 15 and thermally conductive insulating layer 13. After the excess material is poured out, the insulating material 17 coated on the above components is cured to form an insulating material 17 layer. Then, a paste-like thermally conductive material is poured into the space between the thermally conductive insulating layers 13 of the two heat exchangers 14, so that the thermally conductive material fills the gaps between the thermally conductive insulating layers 13.

[0051] In one possible embodiment of this application, the thickness of the thermally conductive insulating layer 13 is between 20-300 μm, and the thermal conductivity of the thermally conductive insulating layer 13 is greater than 3 W / m·K.

[0052] As can be seen from the above, the thermally conductive insulating layer 13 serves as both an adhesive layer and a thermally conductive layer. The relatively high thermal conductivity of the thermally conductive insulating layer 13 improves its thermal conductivity performance. Regarding the thickness of the thermally conductive insulating layer 13, since its thermal conductivity is limited as an adhesive layer, it can be made thinner to allow for rapid heat transfer. For example, the thickness of the thermally conductive insulating layer 13 is between 20-300 μm, specifically 20 μm, 50 μm, 100 μm, 200 μm, or 300 μm.

[0053] Optionally, the heat exchanger 14 is a liquid-cooled heat exchanger, the thickness of the heat exchanger 14 is between 5 and 50 mm, and the heat exchanger 14 is made of copper or aluminum alloy.

[0054] The heat exchanger 14 is a liquid-cooled heat exchanger with a closed cavity and a liquid inlet and outlet connected to the closed cavity. The liquid enters the closed cavity through the inlet. When the heat generated by the power chip 112 is conducted to the heat exchanger 14, the side wall of the heat exchanger 14, which is also the side wall of the closed cavity, receives the heat first. When the liquid flows in the closed cavity, the liquid will exchange heat with the side wall of the heat exchanger 14, carrying away the heat and achieving rapid heat dissipation.

[0055] The greater the thickness of the heat exchanger 14, the higher its heat exchange efficiency, but the larger the volume and material cost it occupies. Based on cost and heat exchange efficiency considerations, the thickness of the heat exchanger 14 in this embodiment is set between 5-50 mm.

[0056] The aluminum material in the copper or aluminum alloy has a high thermal conductivity, which can improve the thermal efficiency of the heat exchanger 14. Copper has a certain strength, which can improve the strength of the heat exchanger 14 and prevent damage to the heat exchanger 14.

[0057] In one possible implementation of this application embodiment, the dimensional variation of the thermally conductive insulating layer 13 in the thickness direction is greater than 10%.

[0058] As described above, the thermally conductive insulating layer 13 is made of thermoplastic material. During the fabrication of the double-sided heat dissipation power module 10, the thermoplastic material undergoes the following stages: First, the slurry stage, where the thermoplastic material is coated onto the heat dissipation surface of the heat exchanger 14; Second, the slurry partially solidifies, becoming a thin film. In this film state, the thermoplastic material exhibits both plasticity and viscosity. The plasticity is used to absorb the height tolerance of the power chip 112, and the viscosity is used to bond the conductive layer 111 or connector 15 to achieve connection with the conductive structure 11; Third, the slurry is completely solidified, reaching its maximum bonding strength and insulation, thus achieving both thermal conductivity and insulation. This embodiment utilizes the plasticity of the thermoplastic material in the second stage to absorb the height tolerance of the power chip 112.

[0059] In order to enable the thermally conductive insulating layer 13 to absorb a larger height difference of the power chips 112, the embodiment of this application sets the dimensional variation of the thermally conductive insulating layer 13 in the thickness direction to be greater than 10%. In this way, the thermally conductive insulating layer 13 can absorb the large height difference of multiple power chips 112, making the double-sided heat dissipation power module 10 more adaptable.

[0060] It should be noted that for thermoplastic materials, the dimensional variation of the thermally conductive insulating layer 13 in the thickness direction cannot be infinitely amplified.

[0061] This application also discloses a method for preparing the above-mentioned double-sided heat dissipation power module 10, such as... Figure 4 As shown, it includes:

[0062] S10: As Figure 5 As shown, two heat exchangers 14 are provided, and thermally conductive insulating layers 13 are respectively provided on the heat dissipation surfaces of the two heat exchangers 14. A conductive material is prepared on the thermally conductive insulating layer 13 of one or both heat exchangers 14. The material of the thermally conductive insulating layer 13 is a thermoplastic material.

[0063] Since the thermally conductive insulating layer 13 is a thermoplastic material, it has a certain degree of plasticity before it is cured. During the preparation of the double-sided heat dissipation power module 10, the power chip 112 can be assembled with it by pressing before the thermoplastic material is cured. This allows the connector 15 with a higher upper surface to penetrate the thermally conductive insulating layer 13 to a greater depth after pressing, while the connector 15 with a lower upper surface penetrates the thermally conductive insulating layer 13 to a lesser depth. This allows the thermally conductive insulating layer 13 to absorb the height difference of the upper surface of the connector 15.

[0064] S20: As Figure 6 , Figure 7 As shown, a conductive layer 111 is formed by etching a conductive material, and the conductive layer 111 includes conductive blocks arranged at intervals; wherein the conductive blocks are arranged corresponding to the terminals of the power chip 112.

[0065] S30: As Figure 8 As shown, a power chip 112 is soldered onto a conductive block with a thermally insulating layer, and a connector 15 is soldered onto the corresponding terminals of the power chip 112.

[0066] When soldering the power chip 112 onto the lead block, an adhesive material can be used, specifically solder paste or silver paste. Similarly, when connecting the connector 15 to the terminals of the power chip 112, solder paste or silver paste can also be used.

[0067] S40: As Figure 1 As shown, another conductive layer 111 or thermally conductive insulating layer 13 is fastened to contact the connector 15 so that the heat exchanger 14 is located on both sides of the power chip 112.

[0068] It should be noted that, Figures 5 to 8 This illustrates how another conductive layer 111 is snapped into contact with connector 15. Figure 1 The fabrication of the double-sided heat dissipation power module 10, based on the knowledge of those skilled in the art... Figures 5 to 8 The thermally conductive insulating layer 13 on the heat exchanger 14, which does not have a conductive layer 111, can be fastened to contact the connector 15 to achieve this. Figure 2 Fabrication of a double-sided heat dissipation power module 10.

[0069] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A double-sided heat dissipating power module, characterized in that The device includes a conductive structure comprising a conductive layer and at least two power chips disposed on the surface of the conductive layer. The power chips are spaced apart and disposed on the same layer. The terminals of the power chips are respectively connected to the conductive layer via connectors. A thermally conductive insulating layer and a heat exchanger are sequentially disposed on both sides of the conductive structure. The thermally conductive insulating layer is made of a thermoplastic material. The conductive layer is formed by etching a conductive material disposed on the thermally conductive insulating layer. The conductive layer includes a plurality of conductive blocks spaced apart corresponding to the power chips. The conductive structure includes two conductive layers, which are respectively disposed on opposite sides of the power chip. A terminal on one side of the power chip is connected to the conductive layer on that side via a connector, and a terminal on the other side of the power chip is connected to the conductive layer on that side via the conductive layer on the other side and a connector. Alternatively, the conductive structure includes one conductive layer, with the power chip disposed on one side of the conductive layer. A terminal on the power chip away from the conductive layer is connected to the conductive layer via a connector. The connector includes a parallel segment parallel to the surface of the power chip and a vertical segment connected to the parallel segment. The parallel segment and the vertical segment have a preset angle.

2. The double-sided heat dissipation power module of claim 1, wherein, The gap between the thermally conductive insulating layers on both sides is filled with blocks of thermally conductive material.

3. The double-sided, heat dissipating power module of claim 2, wherein, The outer periphery of the block of thermally conductive material is wrapped with a layer of insulating material having an electrical resistivity greater than 10 6 Ω·m.

4. The double-sided, heat sinking power module of claim 2, wherein, The thermally conductive material block is prepared from one of the following materials: copper powder coated with silver; copper powder coated with tin; or copper powder mixed with resin material.

5. The double-sided, heat sinking power module of claim 1, wherein, The thickness of the thermally conductive insulating layer is between 20 and 300 μm, and the thermal conductivity of the thermally conductive insulating layer is greater than 3 W / m·K.

6. The double-sided, heat sinking power module of claim 1, wherein, The heat exchanger is a liquid-cooled heat exchanger, the thickness of the heat exchanger is between 5-50mm, and the heat exchanger is made of copper or aluminum alloy.

7. The double-sided, heat sinking power module of claim 1, wherein, The thermally conductive insulating layer exhibits a dimensional variation of more than 10% in the thickness direction.

8. A method of manufacturing a double-sided heat dissipating power module as claimed in any one of the claims 1-7, characterized in that, include: Two heat exchangers are provided, and a thermally conductive insulating layer is provided on the heat dissipation surface of each of the two heat exchangers. A conductive material is prepared on the thermally conductive insulating layer of one or both heat exchangers, and the thermally conductive insulating layer is made of a thermoplastic material. The conductive material is etched to form a conductive layer, the conductive layer comprising a plurality of conductive blocks spaced apart. A power chip is soldered onto the conductive block of the thermally insulating layer, and a connector is soldered onto the corresponding terminal of the power chip. Another conductive layer or the thermally insulating layer is fastened into contact with the connector so that the heat exchanger is located on both sides of the power chip.

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