Multilayer electronic component

Abstract

A multilayer electronic component is provided. The multilayer electronic component includes a main body having dielectric layers and first and second internal electrodes disposed opposite to each other with the dielectric layers interposed therebetween, the main body including a capacitance forming portion, a cover portion, and a rim portion, a capacitance of the multilayer electronic component being formed by the capacitance forming portion having the first and second internal electrodes disposed opposite to each other with the dielectric layers interposed therebetween, the cover portion being disposed on two opposite surfaces of the capacitance forming portion in a first direction, and the rim portion being disposed on two opposite surfaces of the capacitance forming portion in a second or third direction, wherein -3.0 < {1 - (Hc / H1)} x 100 ≤ 0.4, where an average hardness of the cover portion is Hc and an average hardness of the rim portion is H1.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2021-0166008, filed with the Korean Intellectual Property Office on November 26, 2021, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to a multilayer electronic component. Background Technology

[0003] Multilayer ceramic capacitors (MLCCs) are chip capacitors mounted on printed circuit boards of various electronic products, such as display devices including liquid crystal displays (LCDs) or plasma display panels (PDPs), computers, smartphones, mobile phones, etc., to allow charging or discharging from them.

[0004] With advantages such as compactness, guaranteed high capacitance, and ease of installation, these MLCCs can be used as components in a variety of electronic devices.

[0005] Recently, due to the miniaturization and increasing multifunctionality of electronic products, the demand for high integration and high capacitance of multilayer ceramic capacitors has increased, leading to the minimization of space between multilayer ceramic capacitors.

[0006] Furthermore, due to the use of multilayer ceramic capacitors in automotive or infotainment systems, there is an increasing demand for high reliability, high strength characteristics, and miniaturization.

[0007] To achieve this high level of integration, miniaturization, and high capacitance, it is necessary to increase the stacking density by reducing the thickness of the dielectric layer and internal electrodes. Currently, the dielectric layer thickness has reached approximately 0.4 μm and continues to decrease.

[0008] However, when the dielectric layer is formed with a thickness of less than 0.4 μm, it may be difficult to ensure the withstand voltage characteristics, and the temperature stability at high temperatures cannot be ensured due to the thinning of the dielectric layer.

[0009] Existing multilayer ceramic capacitors may have the following problems: during the manufacturing process, the dielectric sheets and internal electrodes are stretched through stacking and compression processes, resulting in poor withstand voltage characteristics and poor high-temperature reliability.

[0010] This problem may be exacerbated when the internal electrodes and dielectric layers are thinned to achieve high integration, miniaturization, and high capacitance. Summary of the Invention

[0011] One aspect of this disclosure addresses the problem that stretching of dielectric sheets and internal electrodes during the stacking and compression of multilayer electronic components adversely affects withstand voltage characteristics and high-temperature reliability.

[0012] One aspect of this disclosure also addresses the problem of deteriorated breakdown voltage characteristics and high-temperature reliability when the internal electrodes and dielectric layers are thinned to achieve high integration, miniaturization, and high capacitance.

[0013] However, the purpose of this disclosure is not limited to the foregoing, and will be more readily understood in the process of describing certain exemplary embodiments in this disclosure.

[0014] According to one aspect of this disclosure, a multilayer electronic component includes: a body including a dielectric layer and a first inner electrode and a second inner electrode, the first inner electrode and the second inner electrode being disposed opposite each other, and the dielectric layer being disposed between the first inner electrode and the second inner electrode; the body including a first surface and a second surface opposite each other in a first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite each other in a second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and opposite each other in a third direction; and a first outer electrode and a second outer electrode disposed outside the body and respectively connected to the first inner electrode and the second inner electrode in the second direction. The main body includes: a capacitor forming portion through which the capacitor of the multilayer electronic component is formed, the capacitor forming portion having a first inner electrode and a second inner electrode arranged opposite to each other and the dielectric layer being between the first inner electrode and the second inner electrode; a cover portion disposed on an upper surface and a lower surface of the capacitor forming portion in the first direction; and a first edge portion disposed on two opposite surfaces of the capacitor forming portion in the second direction, wherein -3.0 < {1-(Hc / H1)}×100 ≤ 0.4, wherein the average hardness of the cover portion is Hc, and the average hardness of the first edge portion is H1.

[0015] According to another aspect of this disclosure, a multilayer electronic component includes: a body including a dielectric layer and a first inner electrode and a second inner electrode, the first inner electrode and the second inner electrode being disposed opposite each other, and the dielectric layer being disposed between the first inner electrode and the second inner electrode; the body including a first surface and a second surface opposite each other in a first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite each other in a second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and opposite each other in a third direction; and a first outer electrode and a second outer electrode disposed outside the body and respectively connected to the first inner electrode and the second inner electrode in the second direction. The main body includes: a capacitor forming portion through which the capacitor of the multilayer electronic component is formed, the capacitor forming portion having a first inner electrode and a second inner electrode arranged opposite to each other and the dielectric layer being between the first inner electrode and the second inner electrode; a cover portion disposed on two opposite surfaces of the capacitor forming portion in the first direction; and a second edge portion disposed on one surface and another surface of the capacitor forming portion in the third direction, wherein -3.0 < {1-(Hc / H2)}×100 ≤ 0.4, wherein the average hardness of the cover portion is Hc, and the average hardness of the second edge portion is H2. Attached Figure Description

[0016] The above and other aspects, features and other advantages of this disclosure will be more clearly understood from the following description, taken in conjunction with the accompanying drawings and specific embodiments, in which:

[0017] Figure 1 This is a perspective view schematically illustrating a multilayer electronic assembly according to exemplary embodiments of the present disclosure;

[0018] Figure 2 Schematic illustration along Figure 1 A cross-sectional view taken from line I-I';

[0019] Figure 3 Schematic illustration along Figure 1 A cross-sectional view taken from line II-II';

[0020] Figure 4 This is an exploded perspective view schematically illustrating a body in which a dielectric layer and an internal electrode are stacked, according to an exemplary embodiment of the present disclosure.

[0021] Figure 5 Schematic illustration of along Figure 1 The region where the average hardness was measured in the cross-sectional view intercepted by line I-I'; and

[0022] Figure 6 The area where the average hardness was measured is schematically shown in a cross-sectional view taken along line II-II'. Detailed Implementation

[0023] Exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings.

[0024] In the accompanying drawings, the first direction can be defined as the stacking direction or the thickness (T) direction, the second direction can be defined as the length (L) direction, and the third direction can be defined as the width (W) direction.

[0025] Multilayer electronic components

[0026] In the following text, reference will be made to Figures 1 to 6 A multilayer electronic assembly according to exemplary embodiments of the present disclosure is described in detail.

[0027] A multilayer electronic component 100 according to an exemplary embodiment of the present disclosure may include a body 110, the body 110 including a dielectric layer and a first inner electrode and a second inner electrode, the first inner electrode and the second inner electrode being configured to be opposite each other and the dielectric layer being between the first inner electrode and the second inner electrode, and the body 110 including a first surface and a second surface opposite each other in a first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite each other in a second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and opposite each other in a third direction.

[0028] Reference Figure 1 and Figure 2 In the main body 110, dielectric layer 111 and first internal electrode 121 and second internal electrode 122 are stacked alternately.

[0029] The specific shape of the body 110 is not limited, but as shown in the figure, the body 110 may have a hexahedral shape or a similar shape. Due to the shrinkage of the ceramic powder particles contained in the body 110 during sintering, the body 110 may not have a hexahedral shape with perfect straight lines, but may have a roughly hexahedral shape.

[0030] The body 110 may have: a first surface 1 and a second surface 2, which are opposite to each other in a first direction; a third surface 3 and a fourth surface 4, which are connected to the first surface 1 and the second surface 2 and are opposite to each other in a second direction; and a fifth surface 5 and a sixth surface 6, which are connected to the first surface 1 and the second surface 2, connected to the third surface 3 and the fourth surface 4, and are opposite to each other in a third direction.

[0031] The multiple dielectric layers 111 forming the body 110 are in a sintered state, and adjacent dielectric layers 111 can be integrated, so that the boundaries between them may not be distinguishable without the use of a scanning electron microscope (SEM).

[0032] The material used to form dielectric layer 111 is not limited, as long as sufficient electrostatic capacitance can be obtained. For example, barium titanate-based materials, lead-based perovskite composite materials, or strontium titanate-based materials can be used. Barium titanate-based materials may include BaTiO3-based ceramic powder particles, and the ceramic powder particles may include BaTiO3 and (BaTiO3) obtained by partially dissolving calcium (Ca), zirconium (Zr), etc., in BaTiO3. 1-x Ca x TiO3, Ba(Ti 1-y Ca y O3、(Ba 1-x Ca x (Ti) 1-y Zr y )O3 or Ba(Ti 1-y Zr y )O3.

[0033] For the purposes of this disclosure, various ceramic additives, organic solvents, binders, dispersants, etc., can be added to powder particles (such as barium titanate (BaTiO3) etc.) as materials for forming dielectric layer 111.

[0034] Reference Figure 2 and Figure 3 The main body 110 may include: a capacitor forming portion A disposed inside the main body 110, and a capacitor is formed by including a first inner electrode 121 and a second inner electrode 122 configured to be opposite to each other and a dielectric layer 111 between the first inner electrode 121 and the second inner electrode 122; and covering portions 112 and 113 disposed on the upper and lower surfaces of the capacitor forming portion A.

[0035] In addition, the capacitor forming section A is a part that contributes to the capacitor forming of the multilayer electronic component 100, and can be formed by repeatedly stacking a plurality of first internal electrodes 121 and a plurality of second internal electrodes 122 and placing a dielectric layer 111 between the first internal electrodes 121 and the second internal electrodes 122.

[0036] The upper cover portion 112 and the lower cover portion 113 can be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitor forming portion A in the thickness direction, respectively, and can substantially prevent damage to the internal electrode due to physical stress or chemical stress.

[0037] The upper cover 112 and the lower cover 113 do not include internal electrodes and may include the same material as the dielectric layer 111.

[0038] In other words, the upper cover 112 and the lower cover 113 may include ceramic materials, such as barium titanate (BaTiO3) based ceramic materials.

[0039] The body 110 of the multilayer electronic assembly 100 according to an exemplary embodiment of the present disclosure may include first edge portions 114 and 115, which are disposed on one surface and another surface of the capacitor forming portion A in a second direction.

[0040] Reference Figure 2 The edge portions 114 and 115 in the second direction may include a first edge portion 114 disposed on the third surface 3 of the body 110 and a first edge portion 115 disposed on the fourth surface 4 of the body 110. That is, the first edge portions 114 and 115 may be disposed on two side surfaces of the body 110 in the longitudinal direction.

[0041] like Figure 2 As shown, the first edge portions 114 and 115 can refer to the regions occupied by the dielectric layer in the area between the end of the capacitor forming portion in the second direction and the third and fourth surfaces in a cross section of the body 110 taken in the first and second directions.

[0042] The first edge portions 114 and 115 can be used to prevent the first inner electrode and the second outer electrode from being electrically connected to each other, or to prevent the second inner electrode and the first outer electrode from being electrically connected to each other, and can also be used to prevent damage to the inner electrode due to physical stress or chemical stress.

[0043] The body 110 of the multilayer electronic assembly 100 according to an exemplary embodiment of the present disclosure may include second edge portions 116 and 117, which are disposed on one surface and another surface of the capacitor forming portion A in a third-direction orientation.

[0044] Reference Figure 3 The third-side upward edge portions 116 and 117 may include a second edge portion 116 disposed on the sixth surface 6 of the body 110 and a second edge portion 117 disposed on the fifth surface 5 of the body 110. That is, the second edge portions 116 and 117 may be disposed on both sides of the body 110 in the width direction.

[0045] like Figure 3 As shown, the second edge portion can refer to the region occupied by the dielectric layer in the area between the end of the capacitor forming portion in the third direction and the fifth and sixth surfaces in a cross section of the body 110 taken in the first and third directions.

[0046] The second edge portions 116 and 117 can be used to prevent damage to the internal electrode due to physical or chemical stress.

[0047] The second edge portions 116 and 117 can be formed by coating an internal electrode onto a ceramic green sheet other than the portion where the edge portions are to be formed.

[0048] In addition, in order to suppress the step difference caused by the inner electrodes 121 and 122, the second edge portions 116 and 117 can be formed by cutting the inner electrodes after stacking to expose the two side surfaces of the capacitor forming portion A in the width direction, and then stacking a single dielectric layer or two or more dielectric layers on the two side surfaces of the capacitor forming portion A (on the two side surfaces in the width direction).

[0049] The inner electrodes 121 and 122 can be alternately arranged, and the dielectric layer 111 is located between the inner electrodes 121 and 122.

[0050] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122. The first inner electrode 121 and the second inner electrode 122 may be alternately arranged opposite each other, and the dielectric layer 111 constituting the body 110 is located between the first inner electrode 121 and the second inner electrode 122. The first inner electrode 121 may contact the first outer electrode 131 on the third surface 3 of the body 110, and the second inner electrode 122 may contact the second outer electrode 132 on the fourth surface 4 of the body 110.

[0051] Reference Figure 2 The first inner electrode 121 can be spaced apart from the fourth surface 4 and can contact the first outer electrode 131 on the third surface 3, and the second inner electrode 122 can be spaced apart from the third surface 3 and can contact the second outer electrode 132 on the fourth surface 4.

[0052] Here, the first inner electrode 121 and the second inner electrode 122 can be separated from each other by a dielectric layer 111 disposed between the first inner electrode 121 and the second inner electrode 122.

[0053] Reference Figure 4 The main body 110 can be formed by stacking a ceramic green sheet on which conductive paste for the first internal electrode 121 is printed and a ceramic green sheet on which conductive paste for the second internal electrode 122 is printed, and then sintering the stack.

[0054] The conductive metal included in the inner electrodes 121 and 122 may be one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but this disclosure is not limited thereto.

[0055] Alternatively, the internal electrodes 121 and 122 can be formed by printing conductive paste on a ceramic green sheet, and screen printing or gravure printing can be used as methods for printing the conductive paste for the internal electrodes.

[0056] Reference Figures 1 to 2 The multilayer electronic assembly 100 according to an exemplary embodiment of the present disclosure may include a body 110, a first external electrode 131 and a second external electrode 132. The first external electrode 131 is disposed outside the body 110 and connected to a first internal electrode 121, and the second external electrode 132 is disposed outside the body 110 and connected to a second internal electrode 122.

[0057] Furthermore, the external electrodes 131 and 132 can be formed of any material (such as metal) as long as the material is conductive, and the specific material can be determined by taking into account electrical properties and structural stability. In addition, the external electrodes 131 and 132 can have a multilayer structure.

[0058] For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the body 110 and plating layers 131b and 132b disposed on the electrode layers 131a and 132a.

[0059] As a more specific example of electrode layers 131a and 132a, electrode layers 131a and 132a may be sintered electrodes comprising conductive metal and glass or resin-based electrodes comprising conductive metal and resin.

[0060] Furthermore, electrode layers 131a and 132a may have the form of a sintered electrode and a resin-based electrode sequentially formed on the body. Additionally, electrode layers 131a and 132a can be formed by transferring a sheet including a conductive metal onto the body or by transferring a sheet including a conductive metal onto the sintered electrode.

[0061] As the conductive metal included in electrode layers 131a and 132a, materials with excellent conductivity can be used, but are not particularly limited thereto. For example, the conductive metal can be one or more of nickel (Ni), copper (Cu), and their alloys.

[0062] Platings 131b and 132b are used to improve mounting characteristics. The type of platings 131b and 132b is not particularly limited, and can be platings including at least one of Ni, Sn, Pd and alloys thereof, and can be formed by multiple layers.

[0063] As a more specific example of plating layers 131b and 132b, plating layers 131b and 132b may be Ni plating layers or Sn plating layers, or Ni plating layers and Sn plating layers sequentially formed on electrode layers 131a and 132a, or Sn plating layers, Ni plating layers and Sn plating layers sequentially formed on electrode layers 131a and 132a. Additionally, plating layers 131b and 132b may include multiple Ni plating layers and / or multiple Sn plating layers.

[0064] In the case of existing multilayer electronic components, due to manufacturing processes, the inner electrodes adjacent to the edges may be thinner than those in the center. This phenomenon can occur during the manufacturing process of capacitors: when pressure is applied to the multilayer electronic component through stacking and compression processes, the dielectric layer and inner electrodes are stretched.

[0065] In particular, multilayer electronic components 100 manufactured in this manner may have poor voltage withstand characteristics and poor high-temperature reliability in high-temperature and high-pressure environments.

[0066] Therefore, in order to improve the high-temperature reliability and high-temperature accelerated life of multilayer electronic components, it is necessary to minimize the stretching of the internal electrodes and dielectric layers.

[0067] In the multilayer electronic assembly 100 according to an exemplary embodiment of the present disclosure, -3.0 < {1-(Hc / H1)}×100 ≤ 0.4, wherein the average hardness of the cover portions 112 and 113 is Hc, and the average hardness of the first edge portions 114 and 115 is H1.

[0068] If the value of {1-(Hc / H1)}×100 is less than or equal to -3.0, the stretching of the dielectric layer and the inner electrode may not be reduced, thus the effect of improving high-temperature reliability and withstand voltage characteristics is insufficient.

[0069] When the value of {1-(Hc / H1)}×100 is greater than -3.0 and less than or equal to 0.4, the stretching of the dielectric layer and the inner electrode can be small, which can improve high-temperature reliability and withstand voltage characteristics.

[0070] When the value of {1-(Hc / H1)}×100 exceeds 0.4, it may be difficult to improve high-temperature reliability and pressure resistance characteristics because achieving the hardness difference may consume too much cost or increase the difficulty of the process.

[0071] Therefore, the multilayer electronic component 100 according to the exemplary embodiments of this disclosure satisfies that the value of {1-(Hc / H1)}×100 is greater than -3.0 and less than or equal to 0.4, thereby reducing the stretching of the dielectric layer and the inner electrode to improve high-temperature reliability and withstand voltage characteristics.

[0072] Furthermore, in the multilayer electronic assembly 100 according to the exemplary embodiments of the present disclosure, -3.0 < {1-(Hc / H2)}×100 ≤ 0.4, wherein the average hardness of the cover portions 112 and 113 is Hc, and the average hardness of the second edge portions 116 and 117 is H2.

[0073] If the value of {1-(Hc / H2)}×100 is less than or equal to -3.0, the stretching of the dielectric layer and the inner electrode may not be reduced, thus the effect of improving high-temperature reliability and withstand voltage characteristics is insufficient.

[0074] When the value of {1-(Hc / H2)}×100 is greater than -3.0 and less than or equal to 0.4, the stretching of the dielectric layer and the inner electrode is small, which can improve high-temperature reliability and withstand voltage characteristics.

[0075] When the value of {1-(Hc / H2)}×100 exceeds 0.4, it may be difficult to improve high-temperature reliability and pressure resistance characteristics because achieving the hardness difference may consume too much cost or increase the difficulty of the process.

[0076] Therefore, the multilayer electronic component 100 according to the exemplary embodiments of this disclosure satisfies that the value of {1-(Hc / H2)}×100 is greater than -3.0 and less than or equal to 0.4, thereby reducing the stretching of the dielectric layer and the inner electrode to improve high-temperature reliability and withstand voltage characteristics.

[0077] The method for measuring the average hardness of the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 is as follows.

[0078] First, the LT section is cut and shaped at the center of the width direction of the multilayer electronic component 100.

[0079] Subsequently, the hardness can be measured at 20 random points P2 on the first edge portions 114 and 115 in the LT section using a nano-indenter (product name G200, KLA), and the average value of the measured hardness values ​​can be calculated to obtain the average hardness of the first edge portions 114 and 115. The hardness can also be measured at 20 random points P1 on the cover portions 112 and 113 in the LT section using a nano-indenter, and the average value of the measured hardness values ​​can be calculated to obtain the average hardness of the cover portions 112 and 113.

[0080] In the method for measuring the average hardness of the edges 116 and 117 in the third direction, firstly, the WT section is cut and shaped at the central part of the multilayer electronic assembly 100 in the length direction.

[0081] Subsequently, the hardness can be measured at 20 random points P3 on the second edge portions 116 and 117 in the WT section using a nanoindenter, and the average value of the measured hardness values ​​can be calculated to obtain the average hardness of the second edge portions 116 and 117.

[0082] Furthermore, the method for controlling the average hardness of the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 is not particularly limited. For example, the average hardness can be controlled by adding mineral spirits to the sheets forming the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 and adjusting the amount of mineral spirits.

[0083] Mineral oil concentrates are petroleum solvents, comprising specific liquid hydrocarbon oils from petroleum. Kerosene (boiling point 150-320℃) or naphtha (boiling point 35-220℃), used as feedstock, undergoes impurity removal and desulfurization treatment, followed by distillation to obtain products with the desired boiling point distribution. Subsequently, the aromatic content of the products is adjusted to obtain products with the desired composition. This difference in boiling point imparts permeability and flowability to ceramic green sheets.

[0084] Specifically, as the content of mineral oil in the ceramic green sheets forming the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 increases, the flowability of organic matter to the edge portions is improved, resulting in an increase in average hardness. Conversely, as the content of mineral oil decreases, the average hardness decreases.

[0085] Based on the total weight of the ceramic green sheets, the content of mineral oil included in the ceramic green sheets may be less than or equal to 2.5 wt%. However, mineral oil can evaporate during the sintering process and may therefore not be detectable in the final product.

[0086] In an exemplary embodiment, the average hardness of the first edge portions 114 and 115 and the average hardness of the dielectric layer 111 included in the capacitor forming portion A may be approximately equal.

[0087] Therefore, steps that may occur during the stacking and compression process of the multilayer electronic component 100 can be reduced, thereby further improving the withstand voltage characteristics and high temperature reliability of the multilayer electronic component 100.

[0088] In an exemplary embodiment, the average hardness of the second edge portions 116 and 117 and the average hardness of the dielectric layer 111 included in the capacitor forming portion A may be approximately equal.

[0089] Therefore, steps that may occur during the stacking and compression process of the multilayer electronic component 100 can be reduced, thereby further improving the withstand voltage characteristics and high temperature reliability of the multilayer electronic component 100.

[0090] When it is said that the average hardness is roughly equal, it can mean that the average hardness values ​​measured by the method of measuring average hardness are not necessarily equal in numerical value. Rather, it can refer to the case where the difference in average hardness values ​​is within 0.1%, 0.05%, or 0.01%.

[0091] To simultaneously achieve miniaturization and high capacitance in the multilayer electronic component 100, the thickness of the dielectric layer and internal electrodes should be reduced to increase the number of stacked layers. However, when the dielectric layer is formed as a thin layer, it may be difficult to ensure withstand voltage characteristics and may not be able to ensure high-temperature reliability of the dielectric layer.

[0092] Furthermore, the thickness of the dielectric layer does not need to be particularly limited. However, if the average thickness of the dielectric layer is less than or equal to 0.4 μm, it may be difficult to control process defects that may occur at the edges, thus making it difficult to ensure withstand voltage characteristics and high-temperature reliability.

[0093] According to exemplary embodiments in this disclosure, when -3.0 < {1 - (Hc / H1)} × 100 ≤ 0.4 or -3.0 < {1 - (Hc / H2)} × 100 ≤ 0.4, excellent withstand voltage characteristics and high temperature reliability can be ensured simultaneously, even when the average thickness of the dielectric layer 111 is less than or equal to 0.4 μm.

[0094] Therefore, when the average thickness of the dielectric layer 111 is less than or equal to 0.4 μm, the effect of improving the withstand voltage characteristics and high temperature reliability according to this disclosure can be more significant.

[0095] Furthermore, the fact that the average thickness of dielectric layer 111 is less than or equal to 0.4 μm does not necessarily mean that it should have a value of less than or equal to 0.4 μm, but may refer to the case where the dielectric layer has a thickness that is thinner than the dielectric layer of the prior art multilayer electronic components.

[0096] The average thickness of dielectric layer 111 can refer to the average thickness of dielectric layer 111 disposed between the first inner electrode 121 and the second inner electrode 122.

[0097] The average thickness of dielectric layer 111 can be measured by scanning an image of the cross-section (LT section) of the body 110 in the length and thickness directions using a scanning electron microscope (SEM).

[0098] For example, the thickness of a random dielectric layer can be measured at 30 equally spaced points along the length direction from an image of a cross-section (LT section) of the body 110 taken at the central part of the body 110 in the width direction by SEM scanning, and the average value of the thickness can be measured.

[0099] Thirty equally spaced points can be measured in the capacitor forming section, which refers to the area where the first inner electrode 121 and the second inner electrode 122 overlap.

[0100] The thicknesses of the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 do not need to be particularly limited. However, if the average thickness of at least one of the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 is less than or equal to 20 μm, it may be difficult to prevent damage to the internal electrodes due to physical or chemical stress.

[0101] According to exemplary embodiments of this disclosure, when -3.0 < {1 - (Hc / H1)} × 100 ≤ 0.4 or -3.0 < {1 - (Hc / H2)} × 100 ≤ 0.4, the thicknesses of the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 do not need to be particularly limited. However, even when the average thickness of at least one of the first edge portions 114 and 115, the second edge portions 116 and 117, and the covering portions 112 and 113 is less than or equal to 20 μm, damage to the inner electrodes can be prevented, excellent withstand voltage characteristics can be ensured, and excellent high-temperature reliability can be ensured.

[0102] Therefore, in an exemplary embodiment, the average thickness of the first edge portions 114 and 115 or the second edge portions 116 and 117 may be less than or equal to 20 μm.

[0103] In addition, in an exemplary embodiment, the average thickness of the covering portions 112 and 113 may be less than or equal to 20 μm.

[0104] The average thickness of the first edge portions 114 and 115 can be measured by using an image of the cross-section (LT cross-section) of the body 110 in the length and thickness directions using SEM scanning.

[0105] For example, the thickness of random first edge portions 114 and 115 obtained from an image of a cross-section (LT section) of the body 110 in the length and thickness directions obtained from the central portion in the width (W) direction of the body 110 scanned by SEM can be measured at 10 equally spaced points in the thickness direction, and the average value of the thickness can be measured.

[0106] The average thickness of the second edge portions 116 and 117 can be measured by using an image of the cross-section (WT section) of the body 110 in the width and thickness directions scanned by SEM.

[0107] For example, the thickness of random second edge portions 116 and 117 obtained from an image of a cross-section (WT section) of the body 110 in the width and thickness directions obtained from the central portion in the length (L) direction of the body 110 scanned by SEM can be measured at 10 equally spaced points in the thickness direction, and the average value of the thickness can be measured.

[0108] The average thickness of the covers 112 and 113 can be measured by using SEM scanning of images of the body 110 in the length and thickness directions (LT section).

[0109] For example, the thickness of random covering portions 112 and 113 obtained from an image of a cross-section (LT section) of the body 110 in the length and thickness directions obtained from the central portion in the width (W) direction of the body 110 scanned by SEM can be measured at 10 equally spaced points in the length direction, and the average value of the thickness can be measured.

[0110] Furthermore, the thickness of the first inner electrode 121 and the second inner electrode 122 does not need to be particularly limited. However, the average thickness of the first inner electrode 121 and the second inner electrode 122 can be less than or equal to 0.4 μm, so as to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100.

[0111] However, if the average thickness of the first inner electrode 121 and the second inner electrode 122 is less than or equal to 0.4 μm, the inner electrodes tend to stretch during stacking and compression, making it difficult to ensure pressure resistance and high-temperature reliability.

[0112] According to exemplary embodiments of this disclosure, when -3.0 < {1 - (Hc / H1)} × 100 ≤ 0.4 or -3.0 < {1 - (Hc / H2)} × 100 ≤ 0.4, excellent pressure resistance and high-temperature reliability can be ensured simultaneously, even when the average thickness of the inner electrodes 121 and 122 is less than or equal to 0.4 μm.

[0113] Therefore, when the average thickness of the first inner electrode 121 and the second inner electrode 122 is less than or equal to 0.4 μm, the effect of improving the pressure resistance and high temperature reliability according to this disclosure can be more significant.

[0114] The average thickness of the first inner electrode 121 and the second inner electrode 122 can be measured by scanning an image of the cross-section (LT section) of the body 110 in the length and thickness directions using SEM.

[0115] For example, the thickness of the first inner electrode 121 and the second inner electrode 122 can be measured at 30 equally spaced points along the length direction from an image of a cross-section (LT section) of the body 110 obtained from the central portion of the body 110 in the width direction by SEM scanning, and the average value of the thickness can be measured.

[0116] Thirty equally spaced points can be measured in the capacitor forming section, which refers to the area where the first inner electrode 121 and the second inner electrode 122 overlap.

[0117] The size of the multilayer electronic component 100 does not need to be subject to special restrictions.

[0118] However, in order to achieve both miniaturization and high capacitance, it is necessary to increase the number of stacks by reducing the thickness of the dielectric layer and the internal electrode. Therefore, the improved reliability and insulation resistance according to this disclosure can be more significant in multilayer electronic components 100 with dimensions of 0402 (length × width, 0.4 mm × 0.2 mm) or smaller.

[0119] Therefore, when the distance between the third and fourth surfaces of the main body is defined as L and the distance between the fifth and sixth surfaces is defined as W, L can be less than or equal to 0.4 mm and W can be less than or equal to 0.2 mm. That is to say, the multilayer electronic component 100 can have a size of 0.4 mm (length × width, 0.4 mm × 0.2 mm) or smaller.

[0120] (Exemplary Example 1)

[0121] Table 1 below shows the average hardness H2 of the second edge portions 116 and 117 and the average hardness Hc of the covering portions 112 and 113 based on the variation of mineral oil content in the ceramic green sheets forming the second edge portions 116 and 117 and the covering portions 112 and 113.

[0122] Table 1

[0123]

[0124]

[0125] *: Comparison example

[0126] In the cases of test numbers 1 to 5, it can be seen that the average hardness of the second edge portions 116 and 117 and the covering portions 112 and 113 can be adjusted by adjusting the content of mineral oil contained in the ceramic green sheet.

[0127] However, it can be seen that in test numbers 4 and 5 (where the content of mineral oil exceeds 2.5 wt%), the efficiency of improving average hardness is not significant.

[0128] Therefore, in an exemplary embodiment, the second edge portions 116 and 117 or the covering portions 112 and 113 can be formed by sintering a dielectric sheet containing mineral oil, and the content of mineral oil can be less than or equal to 2.5 wt%.

[0129] In addition, the method of adjusting the average hardness by satisfying a mineral oil content of less than or equal to 2.5 wt% can also be applied to the first edge portions 114 and 115.

[0130] (Exemplary Example 2)

[0131] Table 2 below shows the effect of the ratio of the average hardness of the second edge portion to the average hardness of the cover portion on pressure resistance and high-temperature reliability.

[0132] First, a sample of a multilayer electronic component with dimensions of 3225 (length × width, 3.2 mm × 2.5 mm), a nominal capacitance of 10 μF, and a rated voltage of 50 V was prepared.

[0133] For withstand voltage characteristics, a voltage was applied to 400 samples from 0V at room temperature until dielectric breakdown occurred, and the minimum voltage at which current was applied (breakdown voltage (BDV)) was measured and averaged.

[0134] In high-temperature reliability testing, 400 samples were subjected to a voltage of 60V for 24 hours at a high temperature of 150℃, and the number of samples that experienced insulation resistance degradation or short circuits was measured.

[0135] Table 2

[0136]

[0137]

[0138] *: Comparison example

[0139] Test numbers 1 to 3 are cases where the value of {1-(Hc / H2)}×100 is less than or equal to -3.0. It can be seen that dielectric breakdown is prone to occur, resulting in poor withstand voltage characteristics and insufficient effect on improving high-temperature reliability.

[0140] Test numbers 4 to 6 are cases where the value of {1-(Hc / H2)}×100 exceeds -3.0 and is less than or equal to 0.4, which confirms that they have excellent pressure resistance and high temperature reliability.

[0141] According to exemplary embodiments in this disclosure, since the value of {1-(Hc / H2)}×100 is greater than -3.0 and less than or equal to 0.4, the stretching of dielectric layers and internal electrodes during the stacking and compression processes of multilayer electronic components is minimized, thereby improving withstand voltage characteristics and high-temperature reliability.

[0142] One of the effects of this disclosure is to improve breakdown voltage characteristics and high-temperature reliability by minimizing the stretching of dielectric layers and internal electrodes during the stacking and compression processes of multilayer electronic components.

[0143] One of the advantages of this disclosure is that it ensures excellent breakdown voltage and high-temperature reliability even in multilayer electronic components with thinned internal electrodes and dielectric layers.

[0144] However, the various beneficial advantages and effects of this disclosure are not limited to those described above, and can be more readily understood in the process of describing specific exemplary embodiments of this disclosure.

[0145] While exemplary embodiments have been shown and described above, it will be readily understood by those skilled in the art that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

Claims

1. A multilayer electronic component, comprising: The body includes a dielectric layer and a first inner electrode and a second inner electrode, the first inner electrode and the second inner electrode being disposed opposite each other, and the dielectric layer being disposed between the first inner electrode and the second inner electrode. The body includes a first surface and a second surface opposite each other in a first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite each other in a second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and opposite each other in a third direction. as well as A first external electrode and a second external electrode are disposed outside the main body and are respectively connected to the first internal electrode and the second internal electrode in the second direction. The main body includes: a capacitor forming portion through which the capacitor of the multilayer electronic assembly is formed, the capacitor forming portion having a first inner electrode and a second inner electrode arranged opposite to each other and a dielectric layer between the first inner electrode and the second inner electrode; a covering portion disposed on two opposing surfaces of the capacitor forming portion in the first direction; and a first edge portion disposed on two opposing surfaces of the capacitor forming portion in the second direction. Wherein, -3.0 < {1 - (Hc / H1)} × 100 ≤ 0.4, and the average hardness of the covering part is Hc, and the average hardness of the first edge part is H1.

2. The multilayer electronic component according to claim 1, wherein, The average hardness of the first edge portion and the average hardness of the dielectric layer included in the capacitor forming portion are approximately equal to each other.

3. The multilayer electronic component according to claim 1, wherein, The average thickness of the first edge portion in the second direction is less than or equal to 20 μm.

4. The multilayer electronic component according to claim 1, wherein, The average thickness of the dielectric layer is less than or equal to 0.4 μm.

5. The multilayer electronic assembly according to claim 1 or 4, wherein, The average thickness of the first inner electrode and the second inner electrode is less than or equal to 0.4 μm.

6. The multilayer electronic assembly according to claim 1, wherein, The average thickness of the cover in the first direction is less than or equal to 20 μm.

7. The multilayer electronic assembly according to claim 1, wherein, L is less than or equal to 0.4 mm and W is less than or equal to 0.2 mm, where L is the distance between the third surface and the fourth surface, and W is the distance between the fifth surface and the sixth surface.

8. A multilayer electronic component, comprising: The body includes a dielectric layer and a first inner electrode and a second inner electrode, the first inner electrode and the second inner electrode being disposed opposite to each other, and the dielectric layer being disposed between the first inner electrode and the second inner electrode. The body includes a first surface and a second surface opposite to each other in a first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposite to each other in a second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and opposite to each other in a third direction. as well as A first external electrode and a second external electrode are disposed outside the main body and are respectively connected to the first internal electrode and the second internal electrode in the second direction. The main body includes: a capacitor forming portion through which the capacitor of the multilayer electronic assembly is formed, the capacitor forming portion having a first inner electrode and a second inner electrode arranged opposite to each other and a dielectric layer between the first inner electrode and the second inner electrode; a covering portion disposed on two opposing surfaces of the capacitor forming portion in the first direction; and a second edge portion disposed on two opposing surfaces of the capacitor forming portion in the third direction. Wherein, -3.0 < {1 - (Hc / H2)} × 100 ≤ 0.4, and the average hardness of the covering part is Hc, and the average hardness of the second edge part is H2.

9. The multilayer electronic component according to claim 8, wherein, The average hardness of the second edge portion and the average hardness of the dielectric layer included in the capacitor forming portion are approximately equal to each other.

10. The multilayer electronic assembly according to claim 8, wherein, The average thickness of the second edge portion in the third direction is less than or equal to 20 μm.

11. The multilayer electronic assembly according to claim 8, wherein, The average thickness of the dielectric layer is less than or equal to 0.4 μm.

12. The multilayer electronic assembly according to claim 8 or 11, wherein, The average thickness of the first inner electrode and the second inner electrode is less than or equal to 0.4 μm.

13. The multilayer electronic assembly according to claim 8, wherein, The average thickness of the cover in the first direction is less than or equal to 20 μm.

14. The multilayer electronic assembly according to claim 8, wherein, L is less than or equal to 0.4 mm and W is less than or equal to 0.2 mm, where L is the distance between the third surface and the fourth surface, and W is the distance between the fifth surface and the sixth surface.

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