Exhaust gas discharge device and semiconductor heat treatment apparatus

Abstract

The application provides a tail gas exhaust device and a semiconductor heat treatment equipment, and relates to the technical field of semiconductors. The tail gas exhaust device comprises an exhaust gas path, an oxygen detection gas path and a purge gas path. The exhaust gas path is used for exhausting tail gas. The oxygen detection gas path is connected in parallel with the exhaust gas path. The inlet end of the oxygen detection gas path is connected to a first position of the exhaust gas path, and the outlet end of the oxygen detection gas path is connected to a second position of the exhaust gas path. The second position is located downstream of the first position. The outlet end of the purge gas path is connected to the inlet section of the inlet gas path in the oxygen detection gas path. The semiconductor heat treatment equipment comprises a reaction chamber and the above tail gas exhaust device. The tail gas exhaust device is connected to the reaction chamber. The tail gas exhaust device can strictly control the oxygen content in the reaction chamber and ensure the normal use of the oxygen detection gas path, thereby ensuring the annealing effect and processing quality of the semiconductor heat treatment equipment on wafers.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a tail gas discharge device and a semiconductor thermal processing equipment. BACKGROUND

[0002] In the field of integrated circuit manufacturing, the use of vertical furnace for annealing process can eliminate the crystal structure stress in the wafer, so the vertical furnace is widely used as a front-end process device in semiconductor thermal processing equipment. During the annealing process, too high oxygen content in the reaction chamber will damage the film quality on the wafer surface, but the existing vertical furnace cannot strictly control the oxygen content in the reaction chamber during use, thereby causing poor annealing effect of the vertical furnace on the wafer and poor processing quality of the wafer. SUMMARY

[0003] The purpose of the present application includes providing a tail gas discharge device and a semiconductor thermal processing equipment to solve the technical problem that the existing semiconductor thermal processing equipment cannot strictly control the oxygen content in the reaction chamber during use, thereby causing poor annealing effect of the semiconductor thermal processing equipment on the wafer and poor processing quality of the wafer.

[0004] To solve the above problems, the present application provides a tail gas discharge device of a semiconductor thermal processing equipment, comprising:

[0005] A discharge gas path for discharging tail gas;

[0006] An oxygen detection gas path connected in parallel to the discharge gas path, wherein the gas inlet end of the oxygen detection gas path is connected to a first position of the discharge gas path, the gas outlet end is connected to a second position of the discharge gas path, and the second position is located downstream of the first position; and

[0007] A purge gas path, wherein the gas outlet end of the purge gas path is connected to the inlet section of the gas inlet path in the oxygen detection gas path.

[0008] Optionally, the gas inlet end of the inlet section extends into the discharge gas path, and the port of the gas inlet end of the inlet section is oriented in the same direction as the flow direction of the discharge gas path at the first position.

[0009] Optionally, the oxygen detection gas path comprises an oxygen analyzer, the gas inlet of the oxygen analyzer is connected to the first position through an oxygen detection gas inlet pipe, and the gas outlet of the oxygen analyzer is connected to the second position through an oxygen detection gas outlet pipe; the oxygen detection gas inlet pipe is provided with an oxygen sampling on-off valve.

[0010] Optionally, the oxygen sampling on-off valve is a normally closed pneumatic valve.

[0011] Optionally, the purging gas path comprises a purging pipe, an upstream pipe section of the purging pipe is sequentially provided with a purging pressure control valve and a purging pressure gauge in the purging direction, and a downstream pipe section of the purging pipe is provided with a purging throttle valve and a purging on-off valve.

[0012] Optionally, the purging on-off valve is a normally open pneumatic valve.

[0013] Optionally, the purging pipe is further provided with a first hand valve, and the first hand valve is located upstream of the purging pressure control valve.

[0014] Optionally, the tail gas discharge device further comprises a make-up gas path, and an outlet end of the make-up gas path is communicated with an inlet of the oxygen analyzer.

[0015] Optionally, the make-up gas path comprises a make-up pipe, an inlet end of the make-up pipe is communicated with the purging gas path, and an outlet end of the make-up pipe is communicated with the inlet of the oxygen analyzer; the make-up pipe is provided with a make-up throttle valve and a make-up on-off valve.

[0016] Optionally, the make-up on-off valve is a normally open pneumatic valve.

[0017] Optionally, the tail gas discharge device further comprises a first hydrogen detection gas path and a hydrogen dilution gas path, an inlet end of the first hydrogen detection gas path is communicated with a third position of the discharge gas path, an outlet end of the first hydrogen detection gas path is communicated with a fourth position of the discharge gas path, and the third position is located upstream of the fourth position and the second position.

[0018] An outlet end of the hydrogen dilution gas path is communicated with a fifth position of the discharge gas path, and the fifth position is located upstream of the third position.

[0019] Optionally, the first hydrogen detection gas path comprises a first hydrogen detector, an inlet of the first hydrogen detector is communicated with the third position through a first hydrogen detection inlet pipe, and an outlet of the first hydrogen detector is communicated with the fourth position through a first hydrogen detection outlet pipe; the first hydrogen detection inlet pipe is provided with a first hydrogen sampling on-off valve and a first hydrogen sampling throttle valve.

[0020] The inlet of the first hydrogen detector is further communicated with a first air conveying pipe, and the first air conveying pipe is provided with a first air conveying throttle valve and a first air conveying on-off valve.

[0021] Optionally, a second end of the first hydrogen detection outlet pipe is connected to an outlet gas path of the oxygen detection gas path, and the first hydrogen detection outlet pipe is communicated with the discharge gas path through the outlet gas path.

[0022] Optionally, the hydrogen dilution gas path comprises a dilution pipe, an outlet end of the dilution pipe being communicated with the fifth position; an upstream pipe section of the dilution pipe is sequentially provided with a dilution pressure control valve and a dilution pressure gauge along a gas conveying direction thereof; a downstream pipe section of the dilution pipe is provided with a dilution flow meter and a dilution on-off valve.

[0023] Optionally, the dilution on-off valve is a normally open pneumatic valve.

[0024] Optionally, the dilution pipe is further provided with a second hand valve, the second hand valve being located upstream of the dilution pressure control valve.

[0025] Optionally, the tail gas exhaust device further comprises a second hydrogen detection gas path, an inlet end of the second hydrogen detection gas path being communicated with a sixth position of the exhaust gas path, an outlet end of the second hydrogen detection gas path being communicated with a seventh position of the exhaust gas path, and the sixth position being located upstream of the seventh position and the second position.

[0026] Optionally, the exhaust gas path comprises an exhaust pipe, the exhaust pipe being sequentially provided with a cooling assembly and a pressure control valve along a flow direction thereof, the first position being located upstream of the cooling assembly, and the second position being located downstream of the pressure control valve.

[0027] The application further provides a semiconductor thermal processing equipment comprising a reaction chamber and the tail gas exhaust device.

[0028] In the tail gas exhaust device, the oxygen detection gas path can realize detection feedback of the oxygen concentration in the reaction chamber through real-time detection of the oxygen concentration in the tail gas in the exhaust gas path. The oxygen concentration in the reaction chamber is continuously reduced with the input of the protective gas, and when the oxygen detection gas path feedbacks that the oxygen concentration of the tail gas is lower than a set concentration value, it indicates that the oxygen content in the reaction chamber has reached the standard, the input of the protective gas into the reaction chamber is stopped, the oxygen detection gas path is closed, and the subsequent annealing process is continued, thereby reducing the occurrence of situations such as damage to the quality of the wafer surface film due to high oxygen content in the reaction chamber, and accordingly ensuring the annealing effect and processing quality of the semiconductor thermal processing equipment on the wafer. In addition, during the cleaning process, the purge gas path continuously blows the purge gas into the exhaust gas path through the inlet section, so that the tail gas in the exhaust gas path cannot flow into the inlet section and accordingly cannot flow into the oxygen detection gas path, thereby ensuring the protection of the oxygen detection gas path during the cleaning process, reducing the corrosion and damage of the purge gas to the pipe sections, components and other elements in the oxygen detection gas path, and accordingly ensuring the normal and accurate use of the oxygen detection gas path, and further ensuring the annealing effect and processing quality of the semiconductor thermal processing equipment on the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced as follows. Obviously, the accompanying drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained based on the provided drawings without creative effort.

[0030] Figure 1 The flowchart of the exhaust emission device in the semiconductor thermal processing equipment provided by the present application in the first form;

[0031] Figure 2 The flowchart of the exhaust emission device in the semiconductor thermal processing equipment provided by the present application in the second form;

[0032] Figure 3 The flowchart of the exhaust emission device in the semiconductor thermal processing equipment provided by the present application in the third form;

[0033] Figure 4 The flowchart of the exhaust emission device in the semiconductor thermal processing equipment provided by the present application in the fourth form;

[0034] Figure 5 The flowchart of the exhaust emission device in the semiconductor thermal processing equipment provided by the present application in the fifth form.

[0035] Explanation of reference signs:

[0036] 10-Reaction chamber; 12-Exhaust connector; 13-First position; 14-Second position; 15-Third position; 16-Fourth position; 17-Fifth position; 18-Sixth position; 19-Seventh position; 100-Emission gas path; 110-Exhaust pipe; 120-Cooling component; 130-Emission pressure control valve; 200-Oxygen detection gas path; 210-Oxygen detection inlet pipe; 211-Inlet section; 220-Oxygen distribution... Analyzer; 230-Oxygen detection outlet tube; 240-Oxygen sampling on / off valve; 300-Purge gas path; 310-Purge tube; 320-Purge pressure control valve; 330-Purge pressure gauge; 340-Purge throttle valve; 350-Purge on / off valve; 360-First manual valve; 400-Supplement gas path; 410-Supplement tube; 420-Supplement throttle valve; 430-Supplement on / off valve; 500-First hydrogen detection gas path; 510- 520-First hydrogen detection inlet pipe; 530-First hydrogen detection outlet pipe; 540-First hydrogen sampling on / off valve; 550-First hydrogen sampling throttle valve; 560-First air delivery pipe; 570-First air delivery throttle valve; 580-First air delivery on / off valve; 600-Hydrogen dilution gas path; 610-Dilution pipe; 620-Dilution pressure control valve; 630-Dilution pressure gauge; 640-Dilution flow meter; 650-Dilution on / off valve; 660-Second manual valve; 700-Second hydrogen detection gas path; 710-Second hydrogen detection inlet pipe; 720-Second hydrogen detector; 730-Second hydrogen detection outlet pipe; 740-Second hydrogen sampling on / off valve; 750-Second hydrogen sampling throttle valve; 760-Second air delivery pipe; 770-Second air delivery throttle valve; 780-Second air delivery on / off valve. Detailed Implementation

[0037] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0038] This embodiment provides a tail gas emission device for semiconductor thermal processing equipment, such as... Figure 1 As shown, the exhaust gas emission device includes an exhaust gas path 100, an oxygen detection gas path 200, and a purging gas path 300. The exhaust gas path 100 is used to emit exhaust gas. The oxygen detection gas path 200 is connected in parallel to the exhaust gas path 100. The inlet end of the oxygen detection gas path 200 is connected to the first position 13 of the exhaust gas path 100, and the outlet end is connected to the second position 14 of the exhaust gas path 100, with the second position 14 located downstream of the first position 13. The outlet end of the purging gas path 300 is connected to the inlet section 211 of the inlet gas path in the oxygen detection gas path 200.

[0039] The embodiment also provides a semiconductor thermal processing equipment, such as Figure 1 as shown, comprising a reaction chamber 10 and the above-mentioned tail gas exhaust device, which is connected with the reaction chamber 10.

[0040] The tail gas exhaust device and the semiconductor thermal processing equipment provided by the embodiment, wherein the tail gas exhaust device comprises an exhaust gas path 100 for exhaust of the reaction chamber 10, an oxygen detection gas path 200 for detecting the oxygen concentration of the tail gas in the exhaust gas path 100, and a purge gas path 300 for purging the inlet section 211 of the gas inlet path in the oxygen detection gas path 200; wherein the semiconductor thermal processing equipment comprises a reaction chamber 10 for annealing treatment of the wafer and the above-mentioned exhaust gas path 100 for exhaust of the tail gas.

[0041] In use, the wafer to be annealed is placed in the reaction chamber 10, and first, an inert atmosphere preparation process is performed, specifically, the gas inlet end of the purge gas path 300 is connected with the purge gas source of the factory system and is in a closed state, the oxygen detection gas path 200 is in a running state, and the protective gas such as argon is introduced into the reaction chamber 10 to discharge the oxygen in the reaction chamber 10 and create an inert atmosphere for the annealing of the wafer; the tail gas of the reaction chamber 10 flows into the exhaust gas path 100, part of the tail gas in the exhaust gas path 100 can flow into the oxygen detection gas path 200 through the communication of the first position 13, and the tail gas after oxygen concentration detection flows back to the exhaust gas path 100 through the communication of the second position 14, and then is discharged to the factory system; then the oxygen detection gas path 200 can realize the detection feedback of the oxygen concentration in the reaction chamber 10 by real-time detection of the oxygen concentration in the tail gas in the exhaust gas path 100, the oxygen concentration in the reaction chamber 10 is continuously reduced with the input of the protective gas, and when the oxygen detection gas path 200 feedbacks that the oxygen concentration of the tail gas is lower than the set concentration value, it indicates that the oxygen content in the reaction chamber 10 has reached the standard, the introduction of the protective gas into the reaction chamber 10 is stopped, the oxygen detection gas path 200 is closed, and the subsequent annealing process is continued, thereby reducing the occurrence of the situation that the high oxygen content in the reaction chamber 10 destroys the quality of the wafer surface film, and accordingly ensuring the annealing effect and processing quality of the semiconductor thermal processing equipment on the wafer.

[0042] When the semiconductor heat treatment equipment needs to be cleaned, the purge gas path 300 is in operation, the oxygen detection gas path 200 is kept closed, but the inlet section 211 of the gas inlet path in the oxygen detection gas path 200 is always a flow section that can flow gas, the purge gas path 300 blows purge gas into the inlet section 211, and then blows into the exhaust gas path 100 through the communication end of the inlet section 211 and the exhaust gas path 100; the tail gas containing the purge gas flows into the exhaust gas path 100 and is discharged to the plant system, wherein, since the purge gas path 300 continuously blows purge gas into the exhaust gas path 100 through the inlet section 211, the tail gas in the exhaust gas path 100 cannot flow into the inlet section 211, and accordingly cannot flow into the oxygen detection gas path 200, thereby ensuring the protection of the oxygen detection gas path 200 during the cleaning process, reducing the corrosion damage of the purge gas to the pipe sections, components and other components in the oxygen detection gas path 200, and accordingly ensuring the normal and accurate use of the oxygen detection gas path 200, further ensuring the annealing effect and processing quality of the semiconductor heat treatment equipment on the wafer.

[0043] Specifically, the semiconductor heat treatment equipment can be a vertical furnace, and the reaction chamber 10 of the vertical furnace can be provided with an exhaust joint 12, and the gas inlet end of the exhaust gas path 100 is connected with the exhaust joint 12 to realize communication with the reaction chamber 10; the set concentration value of oxygen can be 3ppm; the purge gas can be hydrogen chloride gas, and specifically, the pipeline of the exhaust gas path 100 can be made of corrosion-resistant materials such as quartz tubes.

[0044] Optionally, in the embodiment, as shown in Figure 1 the gas inlet end of the inlet section 211 extends into the exhaust gas path 100, and the port of the gas inlet end of the inlet section 211 faces the same direction as the flow direction of the exhaust gas path 100 at the first position 13. During the cleaning process, since the port of the gas inlet end of the inlet section 211 faces the same direction as the flow direction of the exhaust gas path 100 at the corresponding position, the purge gas in the purge gas path 300 blows into the exhaust gas path 100 through the gas inlet end of the inlet section 211, and the flow direction of the purge gas is approximately the same as the flow direction of the tail gas in the exhaust gas path 100 at this position, so that the purge gas can quickly and stably mix with the tail gas in the exhaust gas path 100 and flow downstream with the tail gas, thereby reducing the occurrence of the flow direction of the purge gas and the tail gas in the exhaust gas path 100 intersecting or even reversing at the communication position, causing the two gas streams to collide and generate vortexes, thereby affecting the normal exhaust of the exhaust gas path 100.

[0045] The inlet section 211 is a section of the inlet gas path of the oxygen detection gas path 200 close to the inlet end. In the above case, the inlet end of the inlet section 211 (which is also the outlet end of the purge gas) extends into the exhaust gas path 100, and the purge gas path 300 is in communication with the section of the gas path of the inlet section 211 located outside the exhaust gas path 100, that is, the oxygen detection gas path 200 and the purge gas path 300 share a section of the gas path. Of course, in addition to the above communication with the section of the gas path of the inlet section 211, the purge gas path 300 can also use the same port as the inlet end port of the inlet section 211 to achieve communication between the two, so that the purge gas can be blown out through the port, and the protection of the oxygen detection gas path 200 can be achieved by air sealing the port.

[0046] Specifically, as shown in FIG. 2, Figure 1 The oxygen detection gas path 200 includes an oxygen analyzer 220, the inlet of the oxygen analyzer 220 is in communication with the first position 13 through the oxygen detection inlet pipe 210, and the outlet of the oxygen analyzer 220 is in communication with the second position 14 through the oxygen detection outlet pipe 230. The oxygen detection inlet pipe 210 is provided with an oxygen sampling on-off valve 240. Here, the oxygen detection gas path 200 is one specific form, in which the oxygen detection inlet pipe 210 serves as an inlet gas path, the oxygen analyzer 220 is used for oxygen concentration detection, the oxygen detection outlet pipe 230 serves as an outlet gas path, and the oxygen sampling on-off valve 240 is used to control the on-off state of the oxygen detection inlet pipe 210. During the preparation of the inert atmosphere, the oxygen analyzer 220 is turned on and the oxygen sampling on-off valve 240 is opened to make the oxygen detection inlet pipe 210 in a communication state, so that the oxygen detection gas path 200 is in a running state, the oxygen analyzer 220 sucks the oxygen detection inlet pipe 210 to be in a negative pressure state, and the tail gas in the exhaust gas path 100 flows into the oxygen detection inlet pipe 210 through the communication at the first position 13 under the action of the pressure difference, and then flows into the oxygen analyzer 220 through the inlet, and the tail gas flows into the oxygen detection outlet pipe 230 from the outlet of the oxygen analyzer 220 after the oxygen concentration analysis feedback of the oxygen analyzer 220, and then flows back to the exhaust gas path 100 from the second position 14 and is finally discharged to the plant system, so as to complete the detection feedback of the oxygen concentration in the tail gas of the reaction chamber 10.

[0047] Of course, the oxygen detection gas path 200 can also adopt other forms, as long as it can realize the detection of the oxygen concentration in the tail gas, and is not limited to the above form.

[0048] In the embodiment, the oxygen sampling on-off valve 240 can be a normally closed pneumatic valve. In normal use, the oxygen sampling on-off valve 240 can be controlled to be in the open position or the closed position, so as to control the on-off state of the oxygen detection inlet pipe 210. When the oxygen sampling on-off valve 240 fails, it can remain in the normally closed state, so as to block the oxygen detection inlet pipe 210 and make it in the disconnected state, thereby reducing the damage of the corrosive cleaning gas and the like to the pipeline and the oxygen analyzer 220 when a failure occurs, and correspondingly protecting the oxygen analyzer 220, ensuring the use accuracy and prolonging the service life.

[0049] Optionally, in the embodiment, as shown in Figure 1 The purge gas path 300 includes a purge pipe 310, and the upstream pipe section of the purge pipe 310 is sequentially provided with a purge pressure control valve 320 and a purge pressure gauge 330 in the purge direction. The downstream pipe section of the purge pipe 310 is provided with a purge throttle valve 340 and a purge on-off valve 350. Here, the purge pipe 310 is connected to the purge gas source of the plant system at the gas inlet end. The purge pressure control valve 320 located in the upstream pipe section is used to adjust the gas pressure of the purge gas input into the purge pipe 310 from the purge gas source. The purge pressure gauge 330 is used to display the purge gas pressure in the corresponding pipe section. The purge throttle valve 340 located in the downstream pipe section is used to adjust the flow of the purge gas. The purge on-off valve 350 is used to control the on-off state of the purge pipe 310. When the cleaning process is not required, the purge on-off valve 350 is closed, and the purge gas path 300 is in the closed state. When the cleaning process is required, the purge on-off valve 350 is opened, and then the gas pressure of the purge gas input from the purge gas source is adjusted through the purge pressure control valve 320, and the flow of the purge gas input into the inlet section 211 is adjusted through the purge throttle valve 340, so that the purge gas can not only achieve the gas sealing protection of the inlet section 211 to the oxygen detection gas path 200, but also reduce the consumption of the purge gas.

[0050] Specifically, in the embodiment, the purge on-off valve 350 can be a normally open pneumatic valve. In normal use, the purge on-off valve 350 can be controlled to be in the open position or the closed position, so as to control the on-off state of the purge pipe 310. When the purge on-off valve 350 fails, it can remain in the normally open state, so as to make the purge pipe 310 in the connected state, and the purge gas source can input the purge gas into the inlet section 211 through the purge pipe 310, so as to ensure the purging function of the inlet section 211 and correspondingly reduce the occurrence of the corrosion damage of the corrosive cleaning gas to the oxygen detection gas path 200 due to the failure of the purge gas path 300.

[0051] In the embodiment, as shown in Figure 1As shown, the purge pipe 310 is also provided with a first hand valve 360, which is located upstream of the purge control valve 320. The first hand valve 360 is used to manually control the on-off state of the most upstream pipe section of the purge pipe 310, which corresponds to controlling the delivery of the purge gas from the source to the purge pipe 310 at the source, and can assist the purge on-off valve 350 to play a secondary on-off control role. In particular, when the purge on-off valve 350 fails, the on-off state of the purge pipe 310 can be controlled by the first hand valve 360 to continue to ensure the normal use of the purge gas path 300, thereby improving the use stability and functionality of the purge gas path 300.

[0052] Optionally, in the present embodiment, as shown in Figure 2 As shown, the tail gas discharge device further includes a make-up gas path 400, and the gas outlet end of the make-up gas path 400 is communicated with the gas inlet of the oxygen analyzer 220. In use, the gas inlet end of the make-up gas path 400 is connected with the make-up gas source of the plant system, and after the inert atmosphere preparation process is completed, the oxygen detection gas path 200 no longer needs to detect the oxygen concentration in the tail gas, and the oxygen sampling on-off valve 240 is in the closed state. The make-up gas path 400 is controlled to be in the running state, and the make-up gas source can input inert gas into the oxygen analyzer 220 through the make-up gas path 400 to drive out the residual oxygen in the oxygen analyzer 220, so as to ensure that the oxygen analyzer 220 is in an oxygen-free atmosphere, and accordingly ensure the accuracy of the next oxygen concentration detection. In addition, when the semiconductor heat treatment equipment performs the annealing process after the inert atmosphere preparation process, the oxygen analyzer 220 can be in a standby state, and the make-up gas path 400 continuously delivers inert gas to the oxygen analyzer 220 to reduce the adverse effects of dry pumping of the oxygen analyzer 220 on its use accuracy and service life, and accordingly ensure the normal use of the oxygen analyzer 220 and prolong its service life.

[0053] Specifically, in the present embodiment, as shown in Figure 2As shown, the supplementary gas path 400 includes a supplementary pipe 410, the gas inlet end of the supplementary pipe 410 is communicated with the purge gas path 300, and the gas outlet end is communicated with the gas inlet of the oxygen analyzer 220; the supplementary pipe 410 is provided with a supplementary throttle valve 420 and a supplementary on-off valve 430. Here is one of the specific forms of the supplementary gas path 400, first, the gas inlet end of the supplementary pipe 410 is communicated with the purge gas path 300, so that the supplementary gas source of the supplementary gas path 400 and the purge gas source of the purge gas path 300 are the same gas source, that is, the same gas source can supply gas to the purge gas path 300 and the supplementary gas path 400 at the same time, thereby improving the structural simplicity and functionality of the tail gas discharge device; when it is necessary to supplement the inert gas to the oxygen analyzer 220, the purge gas path 300 is controlled to be in a closed state, the supplementary on-off valve 430 is opened, the supplementary pipe 410 is in a flow-through state, and the supplementary gas source can introduce the inert gas into the purge gas path 300, and the inert gas then flows into the supplementary pipe 410 from the communication position, and the flow of the inert gas to the oxygen analyzer 220 is adjusted through the supplementary throttle valve 420, thereby playing a role of inert gas supplement and protection for the oxygen analyzer 220; when it is necessary to use the oxygen analyzer 220 to analyze the oxygen concentration of the tail gas, the purge gas path 300 is controlled to be in a closed state, the supplementary on-off valve 430 is closed to make the supplementary gas path 400 also in a closed state, and the oxygen sampling on-off valve 240 is opened, and the oxygen analyzer 220 detects the oxygen concentration of the inflowing tail gas.

[0054] Specifically, the purge gas and the supplemented inert gas can both be high-purity nitrogen (PN2), and the high-purity nitrogen source of the plant system can be used as the gas source of the purge gas path 300 and the supplementary gas path 400 at the same time. Preferably, the communication position of the supplementary pipe 410 and the purge pipe 310 can be located between the purge pressure gauge 330 and the purge throttle valve 340.

[0055] In the embodiment, the supplementary on-off valve 430 can be a normally open pneumatic valve. When the supplementary on-off valve 430 is normally used, its on-off state can be controlled to make it in a communication position or a plugging position, and the on-off of the supplementary pipe 410 is correspondingly controlled; when the supplementary on-off valve 430 fails, it can keep a normally open state, so that the supplementary pipe 410 is in a communication state, the supplementary gas source can input the inert gas into the oxygen analyzer 220 through the supplementary pipe 410, the oxygen analyzer 220 is ensured to be protected by the inert gas, and the occurrence of the residual oxygen in the oxygen analyzer 220 and the damage caused by dry pumping due to the closing of the supplementary gas path 400 caused by the failure of the supplementary on-off valve 430 is reduced.

[0056] Optionally, in the embodiment, as shown in FIG. 4, the supplementary pipe 410 can be provided with a supplementary pressure gauge 440 and a supplementary pressure regulator 450. Figure 3As shown, the tail gas exhaust device further comprises a first hydrogen detection gas path 500 and a hydrogen dilution gas path 600. The first hydrogen detection gas path 500 is in communication with the third position 15 of the exhaust gas path 100 at the inlet end and in communication with the fourth position 16 of the exhaust gas path 100 at the outlet end, and the third position 15 is located upstream of the fourth position 16 and the second position 14. The outlet end of the hydrogen dilution gas path 600 is in communication with the fifth position 17 of the exhaust gas path 100, and the fifth position 17 is located upstream of the third position 15. After the inert atmosphere preparation process, the annealing process is entered, and the annealing gas containing hydrogen is introduced into the reaction chamber 10. The hydrogen can play a reducing protection role in the annealing process. The unspent hydrogen in the reaction chamber 10 becomes the tail gas and enters the exhaust gas path 100. The first hydrogen detection gas path 500 is controlled to be in an operating state. The tail gas in the exhaust gas path 100 can enter the first hydrogen detection gas path 500 through the communication at the third position 15. After hydrogen concentration detection, the tail gas returns to the exhaust gas path 100 through the communication at the fourth position 16 of the exhaust gas path 100. The hydrogen concentration in the tail gas can be obtained through the first hydrogen detection gas path 500. When the hydrogen concentration is lower than the safe concentration value, it indicates that the hydrogen concentration in the tail gas at this time is low, and there is no danger such as explosion. The tail gas can be directly discharged to the plant system.

[0057] When the hydrogen concentration is higher than the safety standard, it indicates that the tail gas discharged to the plant system through the exhaust gas path 100 may have a dangerous situation such as explosion. At this time, the hydrogen dilution gas path 600 needs to be operated to dilute the hydrogen in the tail gas in the exhaust gas path 100. Specifically, the hydrogen dilution gas path 600 is connected with a dilution gas source of the plant system. The dilution gas source inputs the dilution gas into the exhaust gas path 100 through the communication at the fifth position 17 of the hydrogen dilution gas path 600. The dilution gas mixes with the tail gas in the exhaust gas path 100 to become a mixed gas. The hydrogen concentration in the mixed gas is reduced and flows into the first hydrogen detection gas path 500 through the communication at the third position 15 for hydrogen concentration detection. The flow of the dilution gas in the hydrogen dilution gas path 600 is adjusted to adjust the dilution degree of the dilution gas to the tail gas in the exhaust gas path 100. Until the hydrogen concentration detected by the first hydrogen detection gas path 500 is lower than the safety standard, the safety of the tail gas discharge is ensured.

[0058] Specifically, in the annealing process, a mixed gas of argon and hydrogen can be introduced into the reaction chamber 10. The ordinary nitrogen (GN2) source in the plant system can be used as a dilution gas source. Correspondingly, the ordinary nitrogen is used as a dilution gas to dilute the hydrogen in the tail gas. The range of the first hydrogen detector 520 can be 10%, and the safe concentration range of the hydrogen in the tail gas in the exhaust gas path 100 can be 1%.

[0059] Specifically, in the embodiment, as shown in FIG. 1, Figure 3As shown, the first hydrogen detection gas path 500 includes a first hydrogen detector 520, the gas inlet of the first hydrogen detector 520 is communicated with the third position 15 through a first hydrogen detection inlet pipe 510, the gas outlet is communicated with the fourth position 16 through a first hydrogen detection outlet pipe 530, the first hydrogen detection inlet pipe 510 is provided with a first hydrogen sampling on-off valve 540 and a first hydrogen sampling throttle valve 550; the gas inlet of the first hydrogen detector 520 is also communicated with a first air conveying pipe 560, the first air conveying pipe 560 is provided with a first air conveying throttle valve 570 and a first air conveying on-off valve 580. Here is one of the specific forms of the first hydrogen detection gas path 500, in use, the first hydrogen sampling on-off valve 540 is opened to make the first hydrogen detection inlet pipe 510 in a communication state, the exhaust gas in the exhaust gas path 100 can flow into the first hydrogen detection inlet pipe 510 through the communication at the third position 15, and then flow into the first hydrogen detector 520 through the gas inlet, and the flow of the exhaust gas is adjusted by the first hydrogen sampling throttle valve 550; at the same time, the gas inlet end of the first air conveying pipe 560 is communicated with an air source, the first air conveying on-off valve 580 is opened, the first air conveying pipe 560 is in a communication state, the air source inputs air into the first hydrogen detector 520 through the first air conveying pipe 560, and the flow of the input air is adjusted by the first air conveying throttle valve 570; the first hydrogen detector 520 detects the hydrogen concentration in the exhaust gas according to the simultaneously input air and exhaust gas, so as to obtain the hydrogen concentration in the exhaust gas, the gas after the detection of the first hydrogen detector 520 flows into the first hydrogen detection outlet pipe 530 through the gas outlet, and then flows back to the exhaust gas path 100 through the communication at the downstream fourth position 16 and continues to be discharged to the plant system, so as to realize the detection of the hydrogen concentration in the exhaust gas by the first hydrogen detection gas path 500.

[0060] Optionally, in the embodiment, as shown, Figure 3 the second end of the first hydrogen detection outlet pipe 530 is connected to the outlet gas path of the oxygen detection gas path 200, and communicated with the exhaust gas path 100 through the outlet gas path. A pipe section in the outlet gas path of the oxygen detection gas path 200 close to the outlet end is used for the backflow conveying of the exhaust gas after the oxygen detection and the backflow conveying of the exhaust gas after the hydrogen detection at the same time, then the second position 14 where the oxygen detection gas path 200 is communicated with the exhaust gas path 100 and the fourth position 16 where the first hydrogen detection gas path 500 is communicated with the exhaust gas path 100 are the same position, the communication of the oxygen detection gas path 200 and the first hydrogen detection gas path 500 with the exhaust gas path 100 is realized through a single communication and a shared pipe section, which not only can reduce the pipe arrangement, but also can reduce the communication of the pipe with the exhaust gas path 100, so as to simplify the structure of the exhaust gas device, improve the air tightness, and reduce the assembly difficulty and cost. Specifically, the oxygen detection outlet pipe 230 in the oxygen detection gas path 200 is connected with the second end of the first hydrogen detection outlet pipe 530 as the outlet gas path thereof.

[0061] Specifically, in the embodiment, as shown in Figure 3 the hydrogen dilution gas path 600 includes a dilution pipe 610, the gas outlet end of the dilution pipe 610 is communicated with the fifth position 17; the upstream pipe section of the dilution pipe 610 is provided with a dilution pressure control valve 620 and a dilution pressure gauge 630 in sequence along the gas conveying direction thereof, and the downstream pipe section of the dilution pipe 610 is provided with a dilution flowmeter 640 and a dilution on-off valve 650. Here is one of the specific forms of the hydrogen dilution gas path 600, when the dilution hydrogen is not needed, the dilution on-off valve 650 is closed, and the hydrogen dilution gas path 600 is in a closed state; when the dilution hydrogen is needed, the dilution pipe 610 is connected with the dilution gas source, the dilution on-off valve 650 is opened, the dilution pipe 610 is in a communicated state, the gas pressure of the dilution gas input into the dilution pipe 610 is adjusted through the dilution pressure control valve 620, the dilution pressure gauge 630 can display the gas pressure of the dilution gas of the corresponding pipe section, and the flow rate of the dilution gas about to flow into the exhaust gas path 100 is adjusted through the dilution flowmeter 640, so that the dilution gas reduces the consumption of the dilution gas on the basis of realizing the dilution of the tail gas hydrogen in the exhaust gas path 100. Preferably, the gas outlet end of the dilution pipe 610 extends into the exhaust gas path 100, and the gas outlet end port faces the same direction as the flow direction of the exhaust gas path 100 at the fifth position 17, so as to ensure that the dilution gas flows into the exhaust gas path 100 in the same direction as the tail gas, and reduce the disturbance of the dilution gas input to the tail gas.

[0062] Specifically, in the embodiment, the dilution on-off valve 650 can be a normally open pneumatic valve. When the dilution on-off valve 650 is normally used, its on-off state can be controlled to be in a communicated position or a plugging position, so as to correspondingly control the on-off of the dilution pipe 610; when the dilution on-off valve 650 fails, it can keep a normally open state, so that the dilution pipe 610 is in a communicated state, the dilution gas source can input the dilution gas into the exhaust gas path 100 through the dilution pipe 610, and the safety of the exhaust gas emission is ensured when the dilution on-off valve 650 fails.

[0063] In the embodiment, as shown in Figure 3 the dilution pipe 610 can also be provided with a second hand valve 660, and the second hand valve 660 is located upstream of the dilution pressure control valve 620. The second hand valve 660 is used for manually controlling the on-off state of the most upstream pipe section of the dilution pipe 610, and correspondingly controls the dilution gas conveying of the dilution gas source to the dilution pipe 610 at the source, which can mutually assist the dilution on-off valve 650 to play a role of secondary on-off control, especially when the dilution on-off valve 650 fails, the on-off state of the dilution pipe 610 can be controlled through the second hand valve 660, so as to continue to ensure the normal use of the hydrogen dilution gas path 600, thereby improving the use stability and functionality of the hydrogen dilution gas path 600.

[0064] Optionally, in the embodiment, as shown inFigure 4 As shown, the tail gas exhaust device further comprises a second hydrogen detection gas path 700, the gas inlet end of the second hydrogen detection gas path 700 is communicated with the sixth position 18 of the exhaust gas path 100, the gas outlet end is communicated with the seventh position 19 of the exhaust gas path 100, and the sixth position 18 is located upstream of the seventh position 19 and the second position 14. After the annealing process is completed, the delivery of the annealing gas containing hydrogen into the reaction chamber 10 is stopped, and the inert gas is input into the reaction chamber 10 to displace the hydrogen in the reaction chamber 10, the tail gas flows into the second hydrogen detection gas path 700 through the communication of the sixth position 18 of the exhaust gas path 100, and after the hydrogen concentration detection, it flows back to the exhaust gas path 100 through the communication of the seventh position 19. When the hydrogen concentration detected by the second hydrogen detection gas path 700 is lower than the safety standard value, it indicates that the hydrogen concentration in the reaction chamber 10 at this time has reached the safety concentration value, and the reaction chamber 10 can perform the chamber door opening operation to take out the wafer inside; when the hydrogen concentration detected by the second hydrogen detection gas path 700 is higher than the safety concentration value, it indicates that the hydrogen concentration in the reaction chamber 10 at this time is too high, and the inert gas needs to be continuously input into the reaction chamber 10 to further displace and displace the hydrogen until the hydrogen concentration is lower than the safety concentration value. The second hydrogen detection gas path 700 can detect and judge whether the hydrogen concentration in the reaction chamber 10 meets the standard, thereby improving the safety of the semiconductor heat treatment equipment.

[0065] The second hydrogen detection gas path 700 can be similar to the first hydrogen detection gas path 500, specifically, as shown in Figure 4 The second hydrogen detection gas path 700 comprises a second hydrogen detector 720, the gas inlet of the second hydrogen detector 720 is communicated with the sixth position 18 through a second hydrogen detection inlet pipe 710, and the gas outlet is communicated with the seventh position 19 through a second hydrogen detection outlet pipe 730. The second hydrogen detection inlet pipe 710 is provided with a second hydrogen sampling on-off valve 740 and a second hydrogen sampling throttle valve 750; the gas inlet of the second hydrogen detector 720 is also communicated with a second air delivery pipe 760, and the second air delivery pipe 760 is provided with a second air delivery throttle valve 770 and a second air delivery on-off valve 780. The principle of use is the same as that of the first hydrogen detection gas path 500, which will not be described here. In addition, when the gas in the reaction chamber 10 performs the chamber door opening operation, the gas in the reaction chamber 10 is directly discharged to the surrounding environment, so the safety standard value of the hydrogen concentration in the reaction chamber 10 is lower, and accordingly, the range of the second hydrogen detector 720 is smaller than that of the first hydrogen detector 520. Specifically, the range of the second hydrogen detector 720 can be 1800ppm, and the safety concentration value of the hydrogen in the reaction chamber 10 can be 10ppm.

[0066] As shown in Figure 5As shown, the outlet end of the first hydrogen detection outlet pipe 530 is connected to the oxygen detection outlet pipe 230, and the outlet end of the second hydrogen detection outlet pipe 730 can also be connected to the oxygen detection outlet pipe 230 and communicated with the exhaust gas path 100 through the oxygen detection outlet pipe 230. With the above arrangement, the pipe section of the oxygen detection gas path 200 close to the outlet end simultaneously conducts the tail gas for the oxygen detection gas path 200, the first hydrogen detection gas path 500 and the second hydrogen detection gas path 700, and the seventh position 19 is the same as the second position 14 and the fourth position 16, thereby further reducing the pipeline arrangement and reducing the arrangement of the communication between the pipeline and the exhaust gas path 100, so as to further simplify the structure of the tail gas exhaust device, improve its air tightness, and reduce the assembly difficulty and cost.

[0067] Specifically, in the present embodiment, as shown in Figures 1-5 The exhaust gas path 100 can include an exhaust pipe 110, which is sequentially provided with a cooling assembly 120 and an exhaust pressure control valve 130 along its flow direction, and the first position 13 is located upstream of the cooling assembly 120, and the second position 14 is located downstream of the exhaust pressure control valve 130. Here is one of the specific forms of the exhaust gas path 100, wherein the cooling assembly 120 is used for cooling the high-temperature tail gas and condensing the water vapor in it into condensed water, and the exhaust pressure control valve 130 is used for maintaining the pressure stability in the reaction chamber 10; the communication between the inlet end of the oxygen detection gas path 200 and the exhaust pipe 110 is located upstream of the cooling assembly 120, closer to the reaction chamber 10, and the tail gas at the communication is not affected by the cooling assembly 120 and the exhaust pressure control valve 130, so that the detection accuracy of the oxygen concentration in the tail gas is higher, and the processing quality of the wafer by the semiconductor heat treatment equipment is correspondingly ensured.

[0068] Specifically, as shown in Figure 5 The third position 15 where the first hydrogen detection gas path 500 communicates with the exhaust gas path 100, the fifth position 17 where the hydrogen dilution gas path 600 communicates with the exhaust gas path 100, and the sixth position 18 where the second hydrogen detection gas path 700 communicates with the exhaust gas path 100 are all located downstream of the exhaust pressure control valve 130.

[0069] Finally, it should be noted that, in this document, the term "only" is used simply to set off from another element, and not to necessarily require or imply that only that element is present. Also, the terms "comprises", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. An element proceeded by "comprises... a" does not, without more constraints, exclude the existence of additional identical elements in the process, method, article, or apparatus that comprises the element.

[0070] The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A tail gas emission device for a semiconductor heat treatment equipment, characterized in that, include: Exhaust gas passage (100) is used to exhaust exhaust gas; An oxygen detection gas path (200) is connected in parallel to the exhaust gas path (100), wherein the inlet end of the inlet section (211) of the oxygen detection gas path (200) is connected to a first position (13) of the exhaust gas path (100), and the port orientation of the inlet end of the inlet section (211) is consistent with the flow direction of the exhaust gas path (100) at the first position (13); the outlet end of the oxygen detection gas path (200) is connected to a second position (14) of the exhaust gas path (100), and the second position (14) is located downstream of the first position (13); and, A purge air passage (300) is provided, the outlet of which is connected to the inlet section (211).

2. The exhaust gas emission device according to claim 1, characterized in that, The intake end of the inlet section (211) extends into the exhaust gas passage (100).

3. The exhaust gas emission device according to claim 1 or 2, characterized in that, The oxygen detection gas path (200) includes an oxygen analyzer (220), the inlet of the oxygen analyzer (220) is connected to the first position (13) through an oxygen detection inlet pipe (210), and the outlet of the oxygen analyzer (220) is connected to the second position (14) through an oxygen detection outlet pipe (230); the oxygen detection inlet pipe (210) is provided with an oxygen sampling on / off valve (240).

4. The exhaust gas emission device according to claim 1 or 2, characterized in that, The purging air path (300) includes a purging pipe (310). The upstream section of the purging pipe (310) is provided with a purging pressure control valve (320) and a purging pressure gauge (330) in sequence along the purging direction. The downstream section of the purging pipe (310) is provided with a purging throttle valve (340) and a purging on / off valve (350).

5. The exhaust gas emission device according to claim 3, characterized in that, The exhaust gas emission device also includes a supplementary gas path (400), the outlet of which is connected to the inlet of the oxygen analyzer (220).

6. The exhaust gas emission device according to claim 5, characterized in that, The supplementary gas path (400) includes a supplementary pipe (410), the inlet end of which is connected to the purge gas path (300), and the outlet end of which is connected to the inlet of the oxygen analyzer (220); the supplementary pipe (410) is provided with a supplementary throttle valve (420) and a supplementary on / off valve (430).

7. The exhaust gas emission device according to claim 1 or 2, characterized in that, The exhaust gas emission device further includes a first hydrogen detection gas path (500) and a hydrogen dilution gas path (600). The inlet end of the first hydrogen detection gas path (500) is connected to the third position (15) of the exhaust gas path (100), and the outlet end is connected to the fourth position (16) of the exhaust gas path (100). The third position (15) is located upstream of the fourth position (16) and the second position (14). The outlet of the hydrogen dilution gas path (600) is connected to the fifth position (17) of the discharge gas path (100), and the fifth position (17) is located upstream of the third position (15).

8. The exhaust gas emission device according to claim 7, characterized in that, The first hydrogen detection gas path (500) includes a first hydrogen detector (520). The inlet of the first hydrogen detector (520) is connected to the third position (15) through a first hydrogen detection inlet pipe (510), and the outlet is connected to the fourth position (16) through a first hydrogen detection outlet pipe (530). The first hydrogen detection inlet pipe (510) is provided with a first hydrogen sampling on / off valve (540) and a first hydrogen sampling throttle valve (550). The inlet of the first hydrogen detector (520) is also connected to a first air delivery pipe (560), and the first air delivery pipe (560) is equipped with a first air delivery throttle valve (570) and a first air delivery on / off valve (580).

9. The exhaust gas emission device according to claim 8, characterized in that, The second end of the first hydrogen detection outlet pipe (530) is connected to the outlet gas path of the oxygen detection gas path (200), and is connected to the discharge gas path (100) through the outlet gas path.

10. The exhaust gas emission device according to claim 7, characterized in that, The hydrogen dilution gas path (600) includes a dilution pipe (610), the outlet of which is connected to the fifth position (17); the upstream section of the dilution pipe (610) is provided with a dilution pressure control valve (620) and a dilution pressure gauge (630) in sequence along its gas delivery direction, and the downstream section of the dilution pipe (610) is provided with a dilution flow meter (640) and a dilution on / off valve (650).

11. The exhaust gas emission device according to claim 1 or 2, characterized in that, The exhaust gas emission device further includes a second hydrogen detection gas path (700), the inlet of which is connected to the sixth position (18) of the exhaust gas path (100), and the outlet of which is connected to the seventh position (19) of the exhaust gas path (100), and the sixth position (18) is located upstream of the seventh position (19) and the second position (14).

12. A semiconductor heat treatment apparatus, characterized in that, It includes a reaction chamber (10) and an exhaust gas emission device according to any one of claims 1-11, wherein the exhaust gas emission device is connected to the reaction chamber (10).

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