Parallel driving circuit of discrete silicon carbide power device

Abstract

The application discloses a parallel driving circuit of discrete silicon carbide power devices, which is characterized by the following steps: connecting multiple power switch modules in parallel with each other based on driving resistors through a driving power supply, a driving chip and a push-pull amplification circuit, so as to realize the driving of power switch devices in each power switch module, and each power switch module contains a current sharing circuit and an anti-interference circuit, which can not only optimize the turn-on performance and turn-off performance of parallel SiC MOSFET tubes, finally realize dynamic current sharing, avoid overcurrent of individual power switch devices caused by unbalanced current of parallel devices, excessive loss and damage, but also effectively protect each parallel SiC MOSFET device, and improve the reliability and working efficiency of the system.

Description

Technical Field

[0001] This invention relates to the field of motor controller technology, and more specifically to a parallel drive circuit for discrete silicon carbide power devices. Background Technology

[0002] Motor controllers mainly consist of power modules, power drive modules, and central control modules. Power electronic devices are the core components of motor controllers, determining the performance and cost of the motor control system. Due to the high temperature resistance, low loss, and suitability for high-frequency operation of silicon carbide power devices (SiCMOSFETs), high-power motor controllers are currently widely designed based on SiCMOSFETs. To meet the demands of high-power applications, SiC MOSFETs are often connected in parallel to increase current capability. However, due to the dispersion of SiC MOSFET electrical parameters and their sensitivity to parasitic parameters, parallel devices experience significant overcharging and unbalanced current during high-speed switching. Furthermore, the presence of parasitic inductance in the gate circuit exacerbates oscillations, further increasing the imbalance of the parallel devices. This leads to excessive losses in the SiC MOSFET power devices, ultimately causing damage and affecting the reliability and durability of the system. Summary of the Invention

[0003] Therefore, the technical problem to be solved by this invention is to overcome the problems in the prior art where, during parallel operation of SiC MOSFET power devices, severe gate oscillations caused by parasitic parameters and current imbalances between parallel devices lead to excessive losses in individual SiC power devices, ultimately resulting in damage and affecting the reliability and durability of the system. The invention provides a parallel drive circuit for discrete silicon carbide power devices.

[0004] According to a first aspect, embodiments of the present invention provide a parallel drive circuit for discrete silicon carbide power devices, comprising: a drive power supply, a drive chip, a push-pull amplifier circuit, and multiple power switch modules connected in parallel on a drive circuit board; the drive chip is connected to the drive power supply, the drive power supply is connected to each power switch module, the drive chip is also connected to the push-pull amplifier circuit, the push-pull amplifier circuit is connected to each power switch module through a drive resistor, and the number of power switch modules connected in parallel is determined based on the output current of the push-pull amplifier circuit; each power switch module includes: power switching devices and a current sharing circuit connected in parallel, the current sharing circuit including: an on-resistor, a first ferrite bead, a first rectifier diode, an off-resistor, and a second ferrite bead;

[0005] The turn-on resistor is connected to the push-pull amplifier circuit through the drive resistor, and the turn-on resistor is connected to the first ferrite bead to form a turn-on branch. The first ferrite bead is connected to the gate of the power switching device. The first rectifier diode, the turn-off resistor, and the second ferrite bead are connected in sequence to form a turn-off branch. The turn-on branch is connected in parallel with the turn-off branch, and the second ferrite bead is connected to the gate of the power switching device.

[0006] By implementing the above-described method, multiple power switch modules are connected in parallel via a drive power supply, a drive chip, and a push-pull amplifier circuit based on drive resistors. This enables the power switching devices in each power switch module to operate. Furthermore, the current sharing circuit in each power switch module optimizes the turn-on and turn-off performance of the parallel SiC MOSFETs, ultimately achieving dynamic current sharing and high efficiency. This avoids overcurrent and excessive losses in individual power switch devices due to current imbalances in the parallel devices, thus preventing damage. It also effectively protects each SiC MOSFET device, improving the reliability and efficiency of the system.

[0007] In conjunction with the first aspect, in one embodiment of the first aspect, each power switch module further includes: an anti-interference circuit, the anti-interference circuit being connected to the current sharing circuit and the power switch device.

[0008] The anti-interference circuit includes: a first capacitor, a transistor, a gate resistor, a second rectifier diode, and a second capacitor.

[0009] The emitter of the transistor is connected to the gate of the power switching device through the first capacitor, the base of the transistor is connected to the Kelvin source of the power switching device through the source resistor, and the emitter of the transistor is also connected to the Kelvin source of the power switching device.

[0010] The gate resistor and the second rectifier diode are connected in series between the Kelvin source and the gate of the power switching device, and the second capacitor is connected in parallel between the Kelvin source and the gate of the power switching device.

[0011] By implementing the above-described embodiments, the anti-interference circuit can enhance the circuit's anti-interference capability, further achieving effective protection of power switching devices and improving system reliability.

[0012] In conjunction with the first aspect, in another embodiment of the first aspect, the parallel drive circuit of the discrete silicon carbide power device, wherein the drive power supply constitutes a flyback topology through an isolated flyback converter, a power isolation transformer, a voltage regulation chip, a first regulating resistor, and a second regulating resistor.

[0013] In conjunction with the first aspect, in another embodiment of the first aspect, the isolated flyback converter is connected to the primary winding of the power isolation transformer, the voltage regulation chip, the first regulating resistor and the second regulating resistor are connected to the secondary winding of the power isolation transformer, and the secondary winding of the power isolation transformer is connected to the drive chip and each power switch module.

[0014] By implementing the above embodiments, the drive power supply adopts an extremely compact flyback topology and can output two isolated power supplies of +15V and -4V. To adapt to the operation of different SiC MOSFETs, it can stably output different negative voltages, prevent the shoot-through risk to the pairs of SiC MOSFETs when they are turned on by each other when the power switching devices are configured as a three-phase full-bridge structure, and also reduce switching losses.

[0015] In conjunction with the first aspect, in another embodiment of the first aspect, the push-pull amplifier circuit includes: a first power driver device and a second power driver device connected to each other, the first power driver device and the second power driver device also being connected to the driver chip and the drive power supply.

[0016] By implementing the above methods, the drive current required for parallel connection of power switching devices (SiC MOSFETs) can be achieved.

[0017] In conjunction with the first aspect, in another embodiment of the first aspect, the parallel drive circuit of the discrete silicon carbide power device further includes: a plurality of thin-film capacitors connected in parallel to each other, wherein the plurality of thin-film capacitors connected in parallel to each other are connected between the drain and the power source of each power switching device.

[0018] By implementing the above-described method, it is beneficial to absorb the voltage spikes generated when the SiC MOSFET is turned off.

[0019] In conjunction with the first aspect, in another embodiment of the first aspect, the drive circuit board is circular, and the diameter of the circle is determined based on the number of power switch modules.

[0020] By implementing the above-described methods, the integration of the driver circuit board can be improved, that is, the power density of the driver circuit board can be enhanced, thereby reducing costs.

[0021] In conjunction with the first aspect, in another embodiment of the first aspect, the push-pull amplifier circuit is arranged in the middle of the plurality of power switch modules on the driving circuit board, and the plurality of power switch modules are arranged symmetrically based on the driving chip and the push-pull amplifier circuit to arrange the connection lines on the driving circuit board with the shortest distance.

[0022] By implementing the above methods, not only can parallel current sharing be achieved, but the traces can also be kept as short as possible, thereby reducing parasitic coupling capacitance and inductance.

[0023] In conjunction with the first aspect, in another embodiment of the first aspect, the drive circuit board is used to drive the motor controller to operate.

[0024] By implementing the above methods, the drive circuit board can be used in conjunction with the drive motor controller to optimize the working efficiency of the motor controller. Attached Figure Description

[0025] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0026] Figure 1 This is a circuit diagram of the parallel drive circuit for discrete silicon carbide power devices in an embodiment of the present invention.

[0027] Figure 2 This is a schematic diagram of negative crosstalk protection for a power switch module in an embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of the driving power supply structure in an embodiment of the present invention;

[0029] Figure label:

[0030] 11-Driver circuit board; 110-Driver power supply; 111-Driver chip;

[0031] 112 - Push-pull amplifier circuit; 113 - Power switch module; 114 - Drive resistor;

[0032] 1130 - Power switching device; 1131 - Current sharing circuit; 1132 - Anti-interference circuit;

[0033] 41-Control circuit board; 42-Drive circuit board; 43-Power circuit board. Detailed Implementation

[0034] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0036] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can also refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0037] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0038] This invention discloses a parallel drive circuit for discrete silicon carbide power devices, such as... Figure 1 As shown, the system includes: a drive power supply 110, a drive chip 111, a push-pull amplifier circuit 112, and multiple power switch modules 113 connected in parallel, all mounted on a drive circuit board 11. The drive chip 111 is connected to the drive power supply 110, and the drive power supply 110 is connected to each power switch module 113. The drive chip 111 is also connected to the push-pull amplifier circuit 112, which is connected to each power switch module 113 via a drive resistor 114. The number of power switch modules 113 is determined based on the output current of the push-pull amplifier circuit 112. Each power switch module 113 includes: power switching devices 1130 and a current sharing circuit 1131 connected in parallel. Figure 1 In the circuit 1131, the current sharing circuit includes: an on-resistor R g1 First ferrite magnetic bead L g1 First rectifier diode D1, turn-off resistor R g2 Second ferrite magnetic bead L g2 Among them, the turn-on resistor R g1 Drive resistor 114(R) G Connect the push-pull amplifier circuit 112 and turn on the resistor R. g1 Connect the first ferrite bead L g1Forming an open branch, the first ferrite bead L g1 The gate of the power switching device 1130 is connected; the first rectifier diode D1 and the turn-off resistor R are connected. g2 Second ferrite magnetic bead L g2 The circuits are connected sequentially to form a shut-off branch, and the open branch is connected in parallel with the shut-off branch. The second ferrite bead L g2 Connect the gate of the power switching device 1130.

[0039] In another specific implementation, Figure 1 Each power switch module 113 further includes an anti-interference circuit 1132, which is connected to the current sharing circuit 1131 and the power switch device 1130. The anti-interference circuit includes a first capacitor C1, a transistor Q3, a gate resistor R1, a second rectifier diode D2, and a second capacitor C. g1 Another anti-interference circuit includes a first capacitor C2, a transistor Q4, a gate resistor R2, a second rectifier diode D4, and a second capacitor C. g2 .

[0040] exist Figure 1 In the circuit, the emitter of transistor Q3 is connected to the gate of power switching device 1130 through the first capacitor C1, and the base of transistor Q3 is connected to the source resistor R. e1 The emitter of transistor Q3 is also connected to the Kelvin source of power switching device 1130.

[0041] A gate resistor R1, a second rectifier diode D2, and a second capacitor C are connected in series between the Kelvin source and gate of the power switching device 1130. g1 It is connected in parallel between the Kelvin source and gate of the power switching device 1130.

[0042] exist Figure 1 In the current sharing circuit 1131, the turn-on resistor R g1 and the turn-off resistor R g2 This allows for individual adjustment of the VDS pulse steepness for each SiC MOSFET, enabling individual optimization of the turn-on current peak and turn-off voltage spike for each SiC MOSFET.

[0043] In addition, the turn-on resistance R of each SiC MOSFET g1 The first ferrite bead L was then connected in series. g1 The turn-off resistance R of each SiC MOSFET g2 A second ferrite bead L was then connected in series. g2 First ferrite bead L g1 With the second ferrite magnetic bead L g2 Ferrite beads are preferred. The first ferrite bead Lg1 With the second ferrite magnetic bead L g2 The selected value can be different.

[0044] The turn-on resistance R of each SiC MOSFET g1 With the turn-off resistor R g2 Ferrite beads are connected in series after each SiC MOSFET to suppress the amplitude of high-frequency oscillations caused by different parasitic parameters in the turn-on and turn-off circuits of each SiC MOSFET when the same drive power is applied to each SiC MOSFET. This ensures dynamic current sharing of the power switching devices (SiC MOSFETs) and reduces switching losses caused by high-frequency oscillations in each SiC MOSFET. Different values ​​of ferrite beads are used in the turn-on and turn-off branches to increase the flexibility of selection and reduce the loss on individual beads.

[0045] exist Figure 1 In the middle, another current sharing circuit 1131 includes: an on-resistor R g3 First ferrite magnetic bead L g3 First rectifier diode D3, turn-off resistor R g4 Second ferrite magnetic bead L g4 Among them, the turn-on resistor R g3 Drive resistor 114(R) G Connect the push-pull amplifier circuit 112 and turn on the resistor R. g3 Connect the first ferrite bead L g3 Forming an open branch, the first ferrite bead L g3 The gate of the power switching device 1130 is connected; the first rectifier diode D3 and the turn-off resistor R are connected. g4 Second ferrite magnetic bead L g4 The circuits are connected sequentially to form a shut-off branch, and the open branch is connected in parallel with the shut-off branch. The second ferrite bead L g4 The gate of the power switching device 1130 is connected;

[0046] The emitter of transistor Q4 is connected to the gate of power switching device 1130 through the first capacitor C2, and the base of transistor Q4 is connected to the source resistor R. e2 The emitter of transistor Q4 is also connected to the Kelvin source of power switching device 1130.

[0047] A gate resistor R2, a second rectifier diode D4, and a second capacitor C are connected in series between the Kelvin source and gate of the power switching device 1130. g2 It is connected in parallel between the Kelvin source and gate of the power switching device 1130.

[0048] exist Figure 1In order to achieve parallel current sharing, the power switching devices 1130 (SiC MOSFETs) in the two parallel power switching modules share a driver chip 111 and a push-pull amplifier circuit 112. In addition to sharing a gate drive resistor 114 (RG), each SiC MOSFET also has its own independent turn-on resistor R. g1 With the turn-off resistor R g2 This allows the gate voltage of each SiC MOSFET to rise and fall independently, ensuring simultaneous switching even when the gate threshold voltages of each SiC MOSFET differ.

[0049] A source resistor R is added to the Kelvin source of each SiC MOSFET. e1 The source resistance R e1 The resistance value can be 1R, and the source resistor R e1 This helps eliminate the circulating current caused by the different source inductances of parallel SiC MOSFETs, and can form a benign negative feedback, reducing the switching speed of faster-switching SiC MOSFETs and increasing the switching speed of slower-switching SiC MOSFETs, thus achieving a balanced circuit operation. In addition, a series circuit of transistor Q3 and first capacitor C1 is added to the gate of each SiC MOSFET, in conjunction with the Kelvin source resistor R... e1 This can reduce the negative crosstalk generated when each SiC MOSFET is turned off. For example... Figure 2 As shown, when each SiC MOSFET is turned off, the coupling current flows from the Kelvin source to the Kelvin source resistor R. e1 This turns on transistor Q3, and the second capacitor C2 connected in series is connected to the gate GS, forming a low-impedance path for the coupling current, reducing negative crosstalk, and preventing the gate insulation layer of the SiC MOSFET from being damaged due to the negative crosstalk bearing a larger negative voltage.

[0050] Each SiC MOSFET has a gate resistor R1 connected in series with the second rectifier diode D2 on its gate GS, which can increase the anti-interference capability of the drive gate.

[0051] exist Figure 1 In the above embodiment, the number of power switch modules 113 is 2. In another optional embodiment, the number of power switch modules can also be 3, 4 or more. Because multiple power switch modules are connected in parallel to form a discrete structure, and each power switch module includes 1 power switch device, 1 current sharing circuit and 1 anti-interference circuit connected to each other, the power switch devices in multiple power switch modules are also connected in parallel. The power switch modules connected in parallel can effectively improve the system current level.

[0052] In a preferred embodiment of the invention, the power switching device is a silicon carbide power device. This silicon carbide power device is a SiC MOSFET. This is because silicon carbide power devices (SiC MOSFETs) have the characteristics of high temperature resistance, low loss, and suitability for high-frequency operation.

[0053] This invention utilizes a power supply, a driver chip, and a push-pull amplifier circuit to connect multiple power switch modules in parallel via a drive resistor. This enables the power switching devices in each power switch module to operate. Each power switch module contains a current sharing circuit and an anti-interference circuit. This not only optimizes the turn-on and turn-off performance of the parallel SiC MOSFETs, ultimately achieving dynamic current sharing and preventing overcurrent and damage to individual power switch devices due to uneven current in the parallel devices, but also effectively protects each parallel SiC MOSFET device, improving the reliability and efficiency of the system.

[0054] In another specific embodiment, the parallel drive circuit of the discrete silicon carbide power device in this embodiment of the invention, in Figure 1 It also includes: multiple thin-film capacitors C connected in parallel. 61 -C 64 Multiple thin-film capacitors are connected in parallel between the drain and Kelvin source of each power switching device. The parallel connection of multiple thin-film capacitors between the drain and source terminals of each SiC MOSFET helps to absorb the voltage spikes generated when the SiC MOSFET is turned off. These multiple thin-film capacitors can be connected in parallel to form a series of small-package, high-voltage ceramic capacitors, which further enhances the absorption of voltage spikes generated when the SiC MOSFET is turned off.

[0055] In another specific implementation, such as Figure 3 As shown, the drive power supply forms a flyback topology through an isolated flyback converter U2, a power isolation transformer T1, a voltage regulator chip U3, a first regulating resistor R1, and a second regulating resistor R2. The isolated flyback converter U2 is connected to the primary winding of the power isolation transformer T1, and the voltage regulator chip U3, the first regulating resistor R1, and the second regulating resistor R2 are connected to the secondary winding of the power isolation transformer T1. The secondary winding of the power isolation transformer T1 connects the drive chip and each power switch module.

[0056] Specifically, in Figure 3In this circuit, the first end of the primary winding of the power isolation transformer T1 is connected to the positive input terminal of the system's input power supply. The second end of the primary winding of the power isolation transformer T1 is connected to the isolation flyback converter U2. The first end of the secondary winding of the power isolation transformer T1 is connected to VCC through rectifier diode D21. The second end of the secondary winding of the power isolation transformer T1 is connected to voltage regulator chip U3 through rectifier diode D22. The center tap of the power isolation transformer T1 is connected to the first regulating resistor R1. The first regulating resistor R1 is connected in parallel with the second regulating resistor R2. The voltage regulator chip U3 is connected across the two ends of the second regulating resistor R2. Capacitors C8 and C9 are also connected in parallel across the two ends of the second regulating resistor R2. Capacitors C5 and C6 are connected in series between the two rectifier diodes D21 and D22.

[0057] exist Figure 3 middle,

[0058] Specifically, in Figure 3 In this circuit, the drive power supply employs an extremely compact flyback topology, capable of outputting two isolated power supplies: +15V and -4V. To accommodate different SiC MOSFETs, a voltage regulator chip U3 (LM337) is connected to the negative voltage output. The resistance values ​​of the first regulating resistor R1 and the second regulating resistor R2 stabilize the output of different negative voltages. Different negative voltages prevent shoot-through risks to the SiC MOSFETs in a three-phase full-bridge structure when they are mutually turned on, and also reduce switching losses. The primary side of the power isolation transformer T1 uses an isolated flyback converter U2 (LT8302), which samples the isolated output voltage directly from the primary side flyback waveform, eliminating the need for a third winding or opto-isolator for adjustment. The power isolation transformer T1 employs a low-coupling capacitor design, with an inter-winding capacitance of only 7pF, which helps achieve high common-mode transient immunity, thus adapting to the fast switching of SiC MOSFETs.

[0059] In another specific implementation, Figure 1 In the push-pull amplifier circuit 112, there are: a first power driver device Q1 and a second power driver device Q2 connected to each other. The first power driver device Q1 and the second power driver device Q2 are also connected to the driver chip 111 (U1) and the drive power supply 110.

[0060] exist Figure 1 In the push-pull amplifier circuit 112, the required drive current for the parallel connection of power switching devices (SiC MOSFETs) can be achieved by selecting P MOSFETs and N MOSFETs of different current levels.

[0061] exist Figure 1In this context, the driver chip 111 (U1) is a current-isolated dual-channel SiC MOSFET driver that provides two completely independent drive outputs. Data transmission is achieved through integrated coreless transformer technology. Therefore, if multiple power switching devices form a three-phase bridge structure, a single driver chip can drive the SiC MOSFET transistors of one bridge arm, which is beneficial for miniaturizing the driver circuit board.

[0062] In another specific implementation, the drive circuit board is circular, and the diameter of the circle is determined based on the number of power switch modules.

[0063] The driver circuit board can be a PCB circuit board. By making the driver circuit board circular, the area of ​​the driver circuit board can be fully utilized, thereby improving the integration of the driver circuit board and achieving the goal of high power density.

[0064] Since the number of power switch modules is determined based on the output current of the push-pull amplifier circuit, the larger the output current of the push-pull amplifier circuit, the more power switch modules can be connected in parallel, and the larger the diameter of the circular drive circuit board will be.

[0065] In another specific implementation, a push-pull amplifier circuit is placed in the middle of multiple power switch modules on the driver circuit board. The multiple power switch modules are symmetrically arranged based on the driver chip and the push-pull amplifier circuit to arrange the connection lines on the driver circuit board with the shortest distance.

[0066] For example, if the number of multiple power switch modules is 2, then the number of power switch devices is also 2. By placing the push-pull amplifier circuit between the gate pins of the two SiC MOSFETs, not only can parallel current sharing be achieved, but the traces can also be kept as short as possible, which can reduce parasitic coupling capacitance and inductance.

[0067] Therefore, in the parallel drive circuit of the discrete silicon carbide power devices in this embodiment of the invention, multiple parallel power switch modules are arranged on a circular drive circuit board, sharing a single drive chip and push-pull amplifier circuit. This enables the power switch devices in each power switch module to operate. Each power switch module contains a current sharing circuit and an anti-interference circuit, which not only optimizes the turn-on and turn-off performance of the parallel SiC MOSFETs and ultimately achieves dynamic current sharing, avoiding overcurrent and excessive losses in individual power switch devices due to current imbalance in the parallel devices, but also effectively protects each parallel SiC MOSFET device, improving the reliability and efficiency of the system.

[0068] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A parallel drive circuit for a discrete silicon carbide power device, comprising: The application relates to a drive circuit board and a drive circuit. The drive circuit board comprises a driving power source, a driving chip, a push-pull amplification circuit, and a plurality of power switch modules connected in parallel with each other, the driving chip is connected with the driving power source, the driving power source is connected with each power switch module, the driving chip is further connected with the push-pull amplification circuit, each power switch module is connected with the push-pull amplification circuit through a driving resistor, and the parallel number of the power switch modules is determined based on the output current of the push-pull amplification circuit; Each power switch module comprises a power switch device and a current sharing circuit connected with each other, the current sharing circuit comprises a turn-on resistor, a first ferrite magnetic bead, a first rectifier diode, a turn-off resistor, and a second ferrite magnetic bead; The turn-on resistor is connected with the push-pull amplification circuit through the driving resistor, and the turn-on resistor and the first ferrite magnetic bead form a turn-on branch, the first ferrite magnetic bead is connected with the gate of the power switch device; the first rectifier diode, the turn-off resistor, and the second ferrite magnetic bead are sequentially connected to form a turn-off branch, the turn-on branch is connected in parallel with the turn-off branch, and the second ferrite magnetic bead is connected with the gate of the power switch device; Each power switch module further comprises an anti-interference circuit connected with the current sharing circuit and the power switch device; The anti-interference circuit comprises a first capacitor, a triode, a gate resistor, a second rectifier diode, and a second capacitor; The emitter of the triode is connected with the gate of the power switch device through the first capacitor, the base of the triode is connected with the Kelvin source of the power switch device through a source resistor, and the emitter of the triode is further connected with the Kelvin source of the power switch device; The gate resistor and the second rectifier diode are connected in series between the Kelvin source and the gate of the power switch device, and the second capacitor is connected in parallel between the Kelvin source and the gate of the power switch device.

2. The parallel drive circuit for a discrete silicon carbide power device according to claim 1, wherein The driving power source comprises an isolation flyback converter, a power source isolation transformer, a voltage regulation chip, a first regulation resistor, and a second regulation resistor, and forms a flyback topological structure.

3. The parallel drive circuit for a discrete silicon carbide power device according to claim 2, wherein The isolation flyback converter is connected with a primary winding of the power source isolation transformer, the voltage regulation chip, the first regulation resistor, and the second regulation resistor are connected with a secondary winding of the power source isolation transformer, and the secondary winding of the power source isolation transformer is connected with the driving chip and each power switch module.

4. The parallel drive circuit for a discrete silicon carbide power device according to claim 1, wherein The push-pull amplification circuit comprises a first power driving device and a second power driving device connected with each other, and the first power driving device and the second power driving device are further connected with the driving chip and the driving power source.

5. The parallel drive circuit for a discrete silicon carbide power device according to claim 1, wherein Further, the application relates to a drive circuit. A plurality of thin film capacitors connected in parallel with each other are connected between the drain of the power switch device and a power source.

6. The parallel drive circuit for a discrete silicon carbide power device according to claim 1, wherein The drive circuit board is circular, and the diameter of the circular drive circuit board is determined based on the parallel number of the power switch modules.

7. The parallel drive circuit for a discrete silicon carbide power device according to claim 1, wherein The push-pull amplification circuit is arranged in the middle of the plurality of power switch modules on the drive circuit board, and the plurality of power switch modules are symmetrically arranged based on the drive chip and the push-pull amplification circuit, so that the connection lines on the drive circuit board are arranged at the shortest distance.

8. The parallel drive circuit of a discrete silicon carbide power device according to any one of claims 1 to 7, characterized by, The drive circuit board is used for driving the motor controller to work.

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