An i-line photoresist, its preparation method and application

Abstract

The present invention discloses an i-line photoresist and its preparation method and application. The preparation method of the i-line photoresist composition disclosed in the present invention comprises the following steps: mixing the components of the i-line photoresist composition evenly, that's all; the i-line photoresist composition comprises the following components: resin, photosensitizer, organosilicon leveling agent and organic solvent; the resin comprises the following components in parts by weight: 80-90 parts of phenolic resin, 20-50 parts of resin C and 10-15 parts of resin D; the phenolic resin is at least one of phenolic resin A and phenolic resin B; the organosilicon leveling agent is polymethylphenylsiloxane. When the i-line photoresist composition of the present invention is used for i-line lithography, the obtained photoresist pattern has high photosensitivity and resolution.

Description

Technical Field

[0001] The present invention relates to an i-line photoresist, a preparation method thereof, and an application thereof. Background Art

[0002] Photoresist is a kind of etch-resistant thin film material whose solubility changes after being irradiated by energy such as light beam, electron beam, ion beam, etc., and has a wide application in the microfabrication of integrated circuits and semiconductor discrete devices. By coating the photoresist on semiconductor, conductor, and insulator materials, the remaining part after exposure and development plays a protective role on the underlying layer, and then an etchant is used for etching to transfer the required micro-pattern from the mask plate to the substrate to be processed. Therefore, photoresist is a key material in microfabrication technology. According to different photochemical reaction mechanisms, photoresist is divided into positive photoresist and negative photoresist: after exposure, the photoresist with increased solubility in the developer to obtain the same pattern as the mask plate is called positive photoresist; after exposure, the photoresist with decreased or even insoluble solubility in the developer to obtain the opposite pattern to the mask plate is called negative photoresist. Both types of photoresist have their own different application fields. Generally speaking, positive photoresist is more commonly used, accounting for more than 80% of the total amount of photoresist.

[0003] With the improvement of the integration degree of integrated circuits and the reduction of the processing line width, photolithography technology has experienced a development process from g-line (436nm) photolithography, i-line (365nm) photolithography, to deep ultraviolet 248nm photolithography, and the current 193nm photolithography. Photoresists corresponding to each exposure wavelength have also emerged. With the change of the exposure wavelength, the composition and structure of the photoresist also change continuously to make the comprehensive performance of the photoresist meet the requirements of the corresponding integrated process. However, at present, the photosensitivity and resolution of i-line photolithography both need to be improved. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the defects of poor photosensitivity and low resolution of the photoresist pattern obtained by existing i-line photolithography, thereby providing an i-line photoresist, a preparation method thereof, and an application thereof. The photoresist pattern obtained by using the i-line photoresist composition of the present invention has high photosensitivity and resolution when used for i-line photolithography.

[0005] The present invention provides an i-line photoresist composition, which comprises the following components: resin, photosensitizer, organosilicon leveling agent, and organic solvent;

[0006] The resin comprises the following components in parts by weight: 80-90 parts of phenolic resin, 20-50 parts of resin C, and 10-15 parts of resin D;

[0007] The phenolic resin is at least one of phenolic resin A and phenolic resin B;

[0008] The preparation method of the phenolic resin A includes the following steps: reacting m-cresol, p-cresol, 3,5-xylenol and formaldehyde under the action of oxalic acid;

[0009] The preparation method of the phenolic resin B includes the following steps: reacting m-cresol, p-cresol and formaldehyde under the action of oxalic acid;

[0010] The structures of the resin C and the resin D are shown as follows:

[0011]

[0012]

[0013] The organosilicon leveling agent is polymethylphenylsiloxane.

[0014] In the present invention, the phenolic resin is preferably 80 parts by weight.

[0015] In the present invention, the phenolic resin is preferably phenolic resin A.

[0016] In the present invention, the phenolic resin is preferably phenolic resin B.

[0017] In the present invention, the phenolic resin is preferably a combination of phenolic resin A and phenolic resin B. When the phenolic resin is a combination of phenolic resin A and B, the mass ratio of phenolic resin A to phenolic resin B is preferably 2:7 - 7:2 (for example, 1:1, 3.5:1, 3:1, 0.4:1, 0.5:1).

[0018] In the present invention, the resin C is preferably 30 parts by weight.

[0019] In the present invention, the resin D is preferably 10 parts by weight.

[0020] In one embodiment, the resin is composed of 80 - 90 parts of phenolic resin, 20 - 50 parts of resin C and 10 - 15 parts of resin D, wherein the phenolic resin is at least one of phenolic resin A and phenolic resin B.

[0021] In the present invention, the photosensitizer can be in the conventional parts by weight in the art, preferably 10 - 40 parts, for example, 10 parts.

[0022] In the present invention, the concentration of the organosilicon leveling agent in the i-line photoresist composition can be the conventional concentration in the art, preferably 500 - 2000 ppm, for example, 500 ppm, 1000 ppm or 2000 ppm.

[0023] In the present invention, the organic solvent can be in the conventional parts by weight in the art, preferably 450 - 800 parts, for example, 450 parts.

[0024] In the present invention, the weight-average molecular weight of the silicone leveling agent is preferably 3000 - 6000.

[0025] In the present invention, the photosensitizer can be a conventional photosensitizer in the art, preferably 2,2',4,4'-tetrahydroxybenzophenone-1,2-naphthoquinone-5-sulfonate.

[0026] In the present invention, the average esterification degree of the photosensitizer is preferably 60%.

[0027] In the present invention, the organic solvent can be a conventional solvent in the art, preferably one or more (such as one or two) of ether solvents, ester solvents, amide solvents, aromatic hydrocarbon solvents, and ketone solvents. The ether solvent can be one or more of ethylene glycol monomethyl ether, anisole, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, and diethylene glycol diethyl ether; preferably ethylene glycol monomethyl ether. The ester solvent can be one or more of propylene glycol monomethyl ether acetate, butyl acetate, ethyl acetate, ethyl lactate, and γ-butyrolactone; preferably propylene glycol monomethyl ether acetate. The amide solvent can be dimethylacetamide. The aromatic hydrocarbon solvent can be xylene. The ketone solvent can be N-methylpyrrolidone. When using two solvents, the weight ratio of the first solvent to the second solvent may not be specifically limited, preferably 1:1 - 1:2, such as 1:1.25.

[0028] In a certain embodiment, the organic solvent is preferably one of ether solvents, ester solvents, amide solvents, aromatic hydrocarbon solvents, and ketone solvents.

[0029] In a certain embodiment, the organic solvent is preferably two kinds, namely ether solvent (the first solvent) and amide solvent (the second solvent).

[0030] In the preparation method of the phenolic resin A, the m-cresol can be in a conventional amount in the art by weight, preferably 30 - 80 parts, such as 65 parts.

[0031] In the preparation method of the phenolic resin A, the p-cresol can be in a conventional amount in the art by weight, preferably 20 - 50 parts, such as 35 parts.

[0032] In the preparation method of the phenolic resin A, the 3,5-xylenol can be in a conventional amount in the art by weight, preferably 1 - 10 parts, such as 5 parts.

[0033] In the preparation method of the phenolic resin A, the oxalic acid can be in a conventional amount in the art by weight, preferably 1 - 10 parts, such as 2 parts.

[0034] In the preparation method of the phenolic resin A, formaldehyde preferably participates in the preparation of the phenolic resin A in the form of a formalin solution. The mass concentration of the formalin solution can be 36.9%. The formalin solution can be in the conventional parts by weight in the art, preferably 20 - 80 parts, such as 60 parts.

[0035] The preparation method of the phenolic resin A can be carried out under a nitrogen atmosphere.

[0036] In the preparation method of the phenolic resin A, the following steps are preferably included: reacting m-cresol, p-cresol, 3,5-xylenol, formaldehyde, and oxalic acid, and adding oxalic acid once in the middle. When adding oxalic acid once in the middle, the amounts of oxalic acid added for the first and second times are the same. The total amount of oxalic acid used twice is 2 parts by weight.

[0037] In the preparation method of the phenolic resin A, the reaction temperature can be the conventional reaction temperature in the art, preferably 40 - 100 °C, such as 40 °C, 60 °C, 100 °C.

[0038] In the preparation method of the phenolic resin A, the reaction time can be the conventional reaction time in the art, preferably 4 - 10 hours, such as 7 hours.

[0039] The preparation method of the phenolic resin A preferably includes the following steps: mixing m-cresol, p-cresol, 3,5-xylenol, the formalin solution, and oxalic acid, reacting at 40 °C for 1 hour, then reacting at 60 °C for 2 hours, and finally adding oxalic acid and reacting at 100 °C for 4 hours.

[0040] In the preparation method of the phenolic resin A, a distillation step can further be included to remove water and unreacted monomers.

[0041] In a certain embodiment, the preparation method of the phenolic resin A is as shown in Preparation Example 1.

[0042] In the preparation method of the phenolic resin B, m-cresol can be in the conventional parts by weight in the art, preferably 30 - 80 parts, such as 55 parts.

[0043] In the preparation method of the phenolic resin B, p-cresol can be in the conventional parts by weight in the art, preferably 20 - 50 parts, such as 45 parts.

[0044] In the preparation method of the phenolic resin B, oxalic acid can be in the conventional parts by weight in the art, preferably 1 - 10 parts, such as 2 parts.

[0045] In the preparation method of the phenolic resin B, formaldehyde preferably participates in the preparation of the phenolic resin B in the form of a formalin solution. The concentration of the formalin solution can be 36.9 wt%. The formalin solution can be in the conventional amounts in the art by weight, preferably 20 - 80 parts, such as 60 parts.

[0046] The preparation method of the phenolic resin B can be carried out under a nitrogen atmosphere.

[0047] In the preparation method of the phenolic resin B, the following steps are preferably included: mixing m-cresol, p-cresol, 3,5-xylenol, formaldehyde, and oxalic acid for reaction, and adding oxalic acid once in the middle. When adding oxalic acid once in the middle, the amounts of oxalic acid added for the first and second times are the same. The total amount of oxalic acid used twice is 2 parts by weight.

[0048] In the preparation method of the phenolic resin B, the reaction temperature can be the conventional reaction temperature in the art, preferably 40 - 100 °C, such as 40 °C, 60 °C, 100 °C.

[0049] In the preparation method of the phenolic resin B, the reaction time can be the conventional reaction time in the art, preferably 4 - 10 hours, such as 7 hours.

[0050] The preparation method of the phenolic resin B preferably includes the following steps: mixing m-cresol, p-cresol, the formalin solution, and oxalic acid, reacting at 40 °C for 1 hour, then reacting at 60 °C for 2 hours, and finally adding oxalic acid and reacting at 100 °C for 4 hours.

[0051] In the preparation method of the phenolic resin B, a distillation step can be further included to remove water and unreacted monomers.

[0052] In a certain embodiment, the preparation method of the phenolic resin B is as shown in Preparation Example 2.

[0053] In one embodiment, the i-line photoresist composition is composed of the resin, the photosensitizer, the organosilicon leveling agent, and the organic solvent.

[0054] The present invention also provides a preparation method of an i-line photoresist composition, which includes the following steps: mixing the above-mentioned components evenly.

[0055] In the preparation method, the mixing method can be the conventional mixing method in the art, preferably stirring.

[0056] In the preparation method, the mixing temperature can be the conventional mixing temperature in the art, preferably 50 °C.

[0057] In the described preparation method, the mixing time can be a conventional mixing time in the art, preferably 4 hours.

[0058] After the mixing, a filtration step may further be included. The filtration method can be a conventional method in the art, and preferably filtering with a polytetrafluoroethylene membrane. The pore size of the polytetrafluoroethylene membrane is preferably 0.2 μm.

[0059] The present invention also provides a method for forming an i-line photoresist pattern, and the method includes the following steps:

[0060] Step 1: Coating the above-mentioned photoresist composition on the surface of a substrate, and then drying and baking to obtain a photoresist layer;

[0061] Step 2: Exposing and developing the photoresist layer obtained in Step 1 to obtain a photoresist pattern.

[0062] In Step 1, the substrate can be a conventional substrate in the art, preferably a silicon wafer.

[0063] In Step 1, the coating method can be a conventional method in the art, and preferably spin coating with a spin coater.

[0064] In Step 1, the thickness of the photoresist layer can be a conventional thickness in the art, preferably 0.75 μm.

[0065] In Step 1, the drying can be conventional drying in the art, preferably vacuum drying.

[0066] In Step 1, the baking temperature can be a conventional baking temperature in the art, preferably 100 °C.

[0067] In Step 1, the baking time is preferably 60 seconds.

[0068] In Step 2, the exposure can be a conventional operation in the art. In the present invention, preferably, the mask is detected with a standard L / S = 1:1, and the obtained photoresist layer is exposed using an i-line light source (i-line wavelength 365 nm).

[0069] In Step 2, the development can be a conventional operation in the art. Generally, the developer used is an aqueous solution of tetramethylammonium hydroxide (TMAH), for example, an aqueous solution of TMAH with a mass fraction of 2.38%.

[0070] In Step 2, the development time is preferably 60 seconds.

[0071] On the basis of not violating the common knowledge in the art, the above preferred conditions can be combined arbitrarily to obtain various preferred examples of the present invention.

[0072] The resin of the present invention was self-made, and other reagents and raw materials used were all commercially available.

[0073] The positive and progressive effects of the present invention are as follows: The photoresist pattern formed by the photoresist composition of the present invention has good photosensitivity. The minimum exposure dose for its 0.5 μm 1:1 equal-space pattern is between 20 - 55 (0.5 μL / S (mJ / cm 2 ))), with high resolution, ranging from 0.23 - 0.53 μm. The edge of the line is a straight line and the edge is narrow. Therefore, the photoresist composition of the present invention has good performance. Detailed implementation manners

[0074] The present invention will be further illustrated below by way of examples, but the present invention is not limited to the scope of the described examples. For the experimental methods without specific conditions noted in the following examples, they are carried out according to conventional methods and conditions, or selected according to the product specifications.

[0075] Preparation Example 1 Preparation of phenolic resin A

[0076] Add 65 parts by weight of m-cresol, 35 parts by weight of p-cresol, 5 parts by weight of 3,5-xylenol, 60 parts by weight of formalin solution (mass fraction 36.9%) and 1 part by weight of oxalic acid into the reaction kettle. Heat to 40 °C under nitrogen protection and react for 1 h, then react at 60 °C for 2 h. Finally, add 1 part by weight of oxalic acid and raise the temperature to 100 °C and react for 4 h. Distill off water and unreacted monomers to obtain phenolic resin A.

[0077] Preparation Example 2 Preparation of phenolic resin B

[0078] The phenolic resin was synthesized by the following method: Add 55 parts by weight of m-cresol, 45 parts by weight of p-cresol, 60 parts by weight of formalin solution (mass fraction 36.9%) and 1 part by weight of oxalic acid into the reaction kettle. Heat to 40 °C under nitrogen protection and react for 1 h, then react at 60 °C for 2 h. Finally, add 1 part by weight of oxalic acid and raise the temperature to 100 °C and react for 4 h. Distill off water and unreacted monomers to obtain phenolic resin B.

[0079] In the following examples or comparative examples, the photoresist composition was prepared according to the following method:

[0080] Examples 1 - 26 and Comparative Examples 1 - 11

[0081] According to the proportions in Table 1, mix phenolic resin, resin C, resin D, photosensitizer, organosilicon leveling agent and organic solvent, stir at 50 °C for 4 h, and filter with a 0.2 μm polytetrafluoroethylene membrane to obtain the photoresist composition.

[0082] The structure of Resin C is as follows, and it can be prepared by referring to the preparation method in Example 2 of Patent CN110183654B.

[0083]

[0084] The structure of Resin D is as follows, and it can be prepared by referring to the method in Example 2 of Patent CN107722265A.

[0085]

[0086] The photosensitizer is 2,2',4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate (average esterification degree 60%); the silicone leveling agent A is polymethylphenylsiloxane (weight average molecular weight 3000 - 6000), the silicone leveling agent B is polydimethylsiloxane (weight average molecular weight 5000 - 8000), and the organic solvent PGMEA is propylene glycol monomethyl ether acetate.

[0087] Table 1

[0088]

[0089]

[0090]

[0091] Effect Examples

[0092] The obtained photoresist compositions of the examples and comparative examples were respectively spin-coated on silicon wafers. Then, after vacuum drying the silicon wafers coated with the photoresist compositions, they were baked at 100°C for 60 s to obtain a photoresist layer with a thickness of 0.75 μm.

[0093] A standard L / S = 1:1 test mask was used, and the obtained photoresist layers were respectively exposed using a light source of i-line (wavelength 365 nm). Then, a 2.38 wt% aqueous solution of tetramethylammonium hydroxide was used as the developer to develop the exposed photoresist layers for 60 s to obtain photoresist patterns.

[0094] 1. Photosensitivity

[0095] It is represented by the minimum exposure dose to obtain a 0.5 μm 1:1 equal-space pattern.

[0096] 2. Resolution

[0097] Find the minimum line width, cut into slices for SEM testing, and determine its size, which is the resolution.

[0098] 3. Line Edge Roughness

[0099] Observation with an electron microscope was carried out according to the following criteria: A (excellent) - the edge of the line is a straight line and the edge is narrow; B (poor) - the edge of the line is not a single line, has a width, and the edge is wide.

[0100] Table 2

[0101]

[0102]

[0103] As can be seen from Table 2 above, the photoresist pattern formed by the photoresist composition of the present invention has good photosensitivity, and the minimum exposure dose for its 0.5 μm 1:1 equal-space pattern is between 20 - 55 (0.5 μmL / S (mJ / cm 2 ))), has high resolution, between 0.23 - 0.53 μm, the edge of the line is a straight line, and the edge is narrow.

[0104] From the comparison of the evaluation indicators of the resolution, it can be seen that: compared with the comparative example, the resolution of the photoresist pattern formed by the photoresist composition of the present invention is high. The same applies to photosensitivity and line edge roughness. It can be seen that the photoresist composition within the scope of the present invention has good performance.

Claims

1. A method for preparing an i-line photoresist composition, characterized in that, It includes the following steps: Mix each component of the i-line photoresist composition evenly, and that's it. The i-line photoresist composition includes the following components: resin, photosensitizer, silicone leveling agent, and organic solvent. The resin includes the following components in parts by weight: 80 - 90 parts of phenolic resin, 20 - 50 parts of resin C, and 10 - 15 parts of resin D. The phenolic resin is at least one of phenolic resin A and phenolic resin B. The preparation method of the phenolic resin A includes the following steps: React m-cresol, p-cresol, 3,5-xylenol, and formaldehyde under the action of oxalic acid to obtain it. The preparation method of the phenolic resin B includes the following steps: React m-cresol, p-cresol, and formaldehyde under the action of oxalic acid to obtain it. The structures of the resin C and resin D are as follows: The silicone leveling agent is polymethylphenylsiloxane.

2. The preparation method of the i-line photoresist composition according to claim 1, characterized in that, In the i-line photoresist composition: The phenolic resin is 80 parts by weight. And / or, the resin C is 30 parts by weight. And / or, the resin D is 10 parts by weight. And / or, the photosensitizer is 10 - 40 parts by weight. And / or, the concentration of the silicone leveling agent in the i-line photoresist composition is 500 - 2000 ppm. And / or, the organic solvent is 450 - 800 parts by weight.

3. The preparation method of the i-line photoresist composition according to claim 1, characterized in that, In the i-line photoresist composition: The weight-average molecular weight of the silicone leveling agent is 3000 - 6000. And / or, the phenolic resin is phenolic resin A, phenolic resin B, or a combination of phenolic resin A and phenolic resin B. And / or, the photosensitizer is 2,2',4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate. And / or, the average esterification degree of the photosensitizer is 60%. And / or, the organic solvent is one or more of ether solvents, ester solvents, amide solvents, aromatic hydrocarbon solvents, and ketone solvents.

4. The method for preparing the i-line photoresist composition according to claim 3, characterized in that, In the i-line photoresist composition: When the phenolic resin is a combination of phenolic resin A and B, the mass ratio of phenolic resin A to phenolic resin B is 2:7 - 7:

2.

5. The preparation method of the i-line photoresist composition according to claim 3, characterized in that, In the i-line photoresist composition: The ether solvent is one or more of ethylene glycol monomethyl ether, anisole, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, and diethylene glycol monoethyl ether. And / or, the ester solvent is one or more of propylene glycol monomethyl ether acetate, butyl acetate, ethyl acetate, ethyl lactate, and γ-butyrolactone. And / or, the amide solvent is dimethylacetamide. And / or, the aromatic hydrocarbon solvent is xylene. And / or, the ketone solvent is N-methylpyrrolidone.

6. The preparation method of the i-line photoresist composition according to claim 4, wherein In the i-line photoresist composition: The ether solvent is ethylene glycol monomethyl ether. And / or, the ester solvent is propylene glycol monomethyl ether acetate.

7. The preparation method of the i-line photoresist composition according to any one of claims 1-6, characterized in that In the i-line photoresist composition: In the preparation method of the phenolic resin A, m-cresol is 30 - 80 parts by weight. And / or, in the preparation method of the phenolic resin A, p-cresol is 20 - 50 parts by weight. And / or, in the preparation method of the phenolic resin A, 3,5-xylenol is 1 - 10 parts by weight. And / or, in the preparation method of the phenolic resin A, oxalic acid is 1-10 parts by weight; And / or, in the preparation method of the phenolic resin A, formaldehyde participates in the preparation of the phenolic resin A in the form of formalin solution; the mass concentration of the formalin solution is 36.9%; the formalin solution is 20-80 parts by weight; And / or, the preparation method of the phenolic resin A is carried out in a nitrogen atmosphere; And / or, in the preparation method of the phenolic resin A, the following steps are included: mixing m-cresol, p-cresol, 3,5-xylenol, formaldehyde, and oxalic acid for reaction, and adding oxalic acid once in the middle; And / or, in the preparation method of the phenolic resin A, the reaction temperature is 40-100 °C; And / or, in the preparation method of the phenolic resin A, the reaction time is 4-10 hours.

8. The preparation method of the i-line photoresist composition according to claim 7, characterized in that, In the i-line photoresist composition: In the preparation method of the phenolic resin A, m-cresol is 65 parts by weight; And / or, in the preparation method of the phenolic resin A, p-cresol is 35 parts by weight; And / or, in the preparation method of the phenolic resin A, 3,5-xylenol is 5 parts by weight; And / or, in the preparation method of the phenolic resin A, oxalic acid is 2 parts by weight; And / or, in the preparation method of the phenolic resin A, the formalin solution is 60 parts by weight; And / or, in the preparation method of the phenolic resin A, the reaction temperature is 40 °C, 60 °C or 100 °C; And / or, in the preparation method of the phenolic resin A, the reaction time is 7 hours.

9. The preparation method of the i-line photoresist composition according to any one of claims 1-6, characterized in that, In the i-line photoresist composition: In the preparation method of the phenolic resin B, m-cresol is 30-80 parts by weight; And / or, in the preparation method of the phenolic resin B, p-cresol is 20-50 parts by weight; And / or, in the preparation method of the phenolic resin B, oxalic acid is 1-10 parts by weight; And / or, in the preparation method of the phenolic resin B, formaldehyde participates in the reaction in the form of formalin solution; the concentration of the formalin solution is 36.9 wt%; the formalin solution is 20-80 parts by weight; And / or, the preparation method of the phenolic resin B is carried out in a nitrogen atmosphere; And / or, in the preparation method of the phenolic resin B, the following steps are included: mixing m-cresol, p-cresol, formaldehyde, and oxalic acid for reaction, and adding oxalic acid once in the middle; And / or, in the preparation method of the phenolic resin B, the reaction temperature is 40-100 °C; And / or, in the preparation method of the phenolic resin B, the reaction time is 4-10 hours.

10. The method for preparing an i-line photoresist composition according to claim 9, characterized in that, In the i-line photoresist composition: In the preparation method of the phenolic resin B, m-cresol is 55 parts by weight; And / or, in the preparation method of the phenolic resin B, p-cresol is 45 parts by weight; And / or, in the preparation method of the phenolic resin B, oxalic acid is 2 parts by weight; And / or, in the preparation method of the phenolic resin B, the formalin solution is 60 parts by weight; And / or, in the preparation method of the phenolic resin B, the reaction temperature is 40 °C, 60 °C or 100 °C; And / or, in the preparation method of the phenolic resin B, the reaction time is 7 hours.

11. The preparation method of the i-line photoresist composition according to claim 1, characterized in that, In the i-line photoresist composition: The resin is composed of 80-90 parts of phenolic resin, 20-50 parts of resin C and 10-15 parts of resin D, wherein the phenolic resin is at least one of phenolic resin A and phenolic resin B; Alternatively, the i-line photoresist composition is composed of the resin, the photosensitizer, the organosilicon leveling agent and the organic solvent.

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