Method for manufacturing high luminous efficacy and high voltage resistant light source

Abstract

The present invention relates to the technical field of light sources, and discloses a method for manufacturing a high luminous efficiency and high voltage resistant light source, including the following manufacturing steps: 1) Provide a substrate, on which there are a light emitting area and a circuit structure, and fix a light emitting chip in the light emitting area; 2) Conduct a first dam on the substrate to form a primary dam; 3) Dispense glue in the light emitting area to form a primary fluorescent glue, and the primary fluorescent glue includes a low refractive index silica gel, and fluoride fluorescent powder is mixed in the low refractive index silica gel; 4) Conduct a second dam on the primary dam to form a rear dam; 5) Dispense glue in the light emitting area to form a rear fluorescent glue, and the rear fluorescent glue includes a high refractive index silica gel; the rear fluorescent glue is a high refractive index silica gel, which improves the voltage resistant ability of the glue surface of the light source. When the glue surface of the light source is squeezed, the gold wire between the chip and the circuit structure will not be broken. The rear fluorescent glue covers the primary fluorescent glue, and can cover and protect the fluoride fluorescent powder in the primary fluorescent glue, so that the luminous efficiency of the light source is increased from the original 170 lm / w to 200 LM / W.

Description

Technical Field

[0001] This invention patent relates to the technical field of light sources. Specifically, it relates to a method for manufacturing a high luminous efficacy and high voltage-resistant light source. Background Art

[0002] A light source is a light-emitting component in various lamps, including a substrate and light-emitting chips disposed on the substrate. The light-emitting chips are electrically connected to the substrate, and then a fluorescent glue is dotted on the substrate. The fluorescent glue wraps multiple light-emitting chips, and the light emitted by the light-emitting chips is transmitted through the fluorescent glue.

[0003] In the prior art, the fluorescent glue is low-refractive silicone rubber, its glue surface is relatively soft, its luminous efficacy is low, and it is not voltage-resistant. During use, when the fluorescent glue is squeezed, if the gold wire between the chip and the circuit structure is easily broken, it will cause the light source to die. Summary of the Invention

[0004] The present invention provides a method for manufacturing a high luminous efficacy and high voltage-resistant light source, aiming to solve the problem that the light source in the prior art is not voltage-resistant.

[0005] The present invention is implemented as follows. The method for manufacturing a high luminous efficacy and high voltage-resistant light source includes the following manufacturing steps:

[0006] 1), Provide a substrate, which has a light-emitting area and a circuit structure thereon. Fix a chip in the light-emitting area, and electrically connect the chip and the circuit structure through a gold wire;

[0007] 2), Perform a first damming on the substrate to form a primary damming, and the primary damming is arranged around the outer periphery of the light-emitting area;

[0008] 3), Dot glue in the light-emitting area to form a primary fluorescent glue, and the primary fluorescent glue includes low-refractive silicone rubber, and fluoride fluorescent powder is mixed in the low-refractive silicone rubber;

[0009] 4), Perform a second damming on the primary damming to form a secondary damming, and the secondary damming covers the primary damming. The primary damming and the secondary damming form an integral damming structure that surrounds the outer periphery of the light-emitting area;

[0010] 5), Dot glue in the light-emitting area to form a secondary fluorescent glue, and the secondary fluorescent glue includes high-refractive silicone rubber, and the secondary fluorescent glue covers the primary fluorescent glue.

[0011] Further, in the manufacturing step 1), after the chip is fixed in the light-emitting area, place the light source in an oven and bake it for a set time.

[0012] Further, in the manufacturing step 1), after the chip is fixed in the light-emitting area, when the light source is placed in an oven and baked, the temperature range is between 150°C and 190°C.

[0013] Further, in the manufacturing step 1), after the chip is fixed in the light-emitting area, the light source is placed in an oven and baked for a time range between 2.5 hours and 3.5 hours.

[0014] Further, in the manufacturing step 2), after the first dam is formed on the substrate, the electrical connection between the chip and the circuit structure is tested using a small current.

[0015] Further, in the manufacturing step 3), after the light-emitting area is dispensed with glue, after the fluoride phosphor in the primary fluorescent glue has settled for a set time, the light source is placed in an oven for baking to fix the primary fluorescent glue in the light-emitting area.

[0016] Further, in the manufacturing step 3), the top of the primary fluorescent glue is lower than the top of the primary dam.

[0017] Further, in the manufacturing step 5), the secondary fluorescent glue covers the entire primary fluorescent glue from top to bottom. The secondary fluorescent glue has a glue surface arranged outward, and the glue surface is spherical.

[0018] Further, in the manufacturing step 2), during the process of performing the first dam operation, intermittent dispensing is performed on the outer periphery of the light-emitting area to form the primary dam. The top of the primary dam forms a plurality of downwardly concave grooves, and the plurality of grooves are arranged at intervals along the circumferential direction of the primary dam;

[0019] An outer through hole is provided in the outer side of the primary dam. The outer through hole communicates with the groove inward and communicates with the outside of the primary dam outward. Along the direction from inside to outside, the outer through hole is arranged obliquely downward.

[0020] In the manufacturing step 4), after the second dam is formed on the primary dam, the bottom of the secondary dam covers the top of the primary dam and fills a plurality of grooves and the outer through hole.

[0021] Further, an inner through hole is provided in the inner side of the primary dam. The inner through hole communicates with the groove outward and communicates with the light-emitting area inward. The inner through hole is bent and includes an outer section and an inner section. The inner section and the outer section are connected in butt joint to form a butt joint position. Along the butt joint position to the end of the inner through hole, the inner section and the outer section are respectively arranged obliquely upward.

[0022] In the manufacturing step 3), after the light-emitting area is dispensed with glue, the inner section of the inner through hole is filled with the primary fluorescent glue, and the outer section of the inner through hole is in a vacant state;

[0023] In the production step 4), after the second damming is carried out on the initial damming dam, the bottom of the rear damming dam covers the top of the initial damming dam, and fills multiple grooves and the outer section of the inner through hole.

[0024] Compared with the prior art, in the method for manufacturing a high luminous efficacy and high voltage resistance light source provided by the present invention, the rear fluorescent glue is high refractive silica gel, which improves the voltage resistance ability of the glue surface of the light source. When the glue surface of the light source is squeezed, the gold wire between the chip and the circuit structure will not be broken. The rear fluorescent glue covers the initial fluorescent glue, and can cover and protect the fluoride phosphor of the initial fluorescent glue, so that when the light source has a color rendering index of 90, the luminous efficacy is increased from the original 170 lm / W to 200 LM / W. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic flow chart of the method for manufacturing a high luminous efficacy and high voltage resistance light source provided by the present invention;

[0026] Figure 2 is a front view schematic diagram of the high luminous efficacy and high voltage resistance light source provided by the present invention;

[0027] Figure 3 is Figure 2 an enlarged schematic diagram at position A in DETAILED DESCRIPTION OF THE EMBODIMENTS

[0028] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0029] The implementation of the present invention will be described in detail below with reference to specific embodiments.

[0030] In the drawings of this embodiment, the same or similar reference numerals correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", etc. indicating the orientation or positional relationship, they are based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the drawings are only for illustrative purposes and cannot be understood as a limitation of this patent. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific circumstances.

[0031] Please refer to Figures 1 to 3 shown, which is a preferred embodiment provided by the present invention.

[0032] The method for manufacturing a high luminous efficacy and high voltage resistance light source includes the following manufacturing steps:

[0033] 1), Provide a substrate 200 with a light-emitting area and a circuit structure thereon. Fix a chip 202 in the light-emitting area and electrically connect the chip 202 to the circuit structure with a gold wire;

[0034] 2), Perform a first dam formation on the substrate 200 to form a primary dam 101, and the primary dam 101 is arranged around the outer periphery of the light-emitting area;

[0035] 3), Dispense glue in the light-emitting area to form a primary fluorescent glue 300. The primary fluorescent glue 300 includes a low-refractive silica gel, and a fluoride phosphor is mixed in the low-refractive silica gel;

[0036] 4), Perform a second dam formation on the primary dam 101 to form a secondary dam 100. The secondary dam 100 covers the primary dam 101, and the primary dam 101 and the secondary dam 100 form an integrated dam structure that surrounds the outer periphery of the light-emitting area;

[0037] 5), Dispense glue in the light-emitting area to form a secondary fluorescent glue 301. The secondary fluorescent glue 301 includes a high-refractive silica gel, and the secondary fluorescent glue 301 covers the primary fluorescent glue 300.

[0038] In the above-mentioned method for manufacturing a high luminous efficacy and high voltage-resistant light source, the secondary fluorescent glue 301 is a high-refractive silica gel, which improves the voltage resistance of the glue surface of the light source. When the glue surface of the light source is squeezed, the gold wire between the chip 202 and the circuit structure will not be broken. The secondary fluorescent glue 301 covers the primary fluorescent glue 300, which can cover and protect the fluoride phosphor in the primary fluorescent glue 300, so that the luminous efficacy of the light source is increased from the original 170 lm / W to 200 LM / W under the condition of 90 color rendering index.

[0039] In manufacturing step 1), after the chip 202 is fixed in the light-emitting area, place the light source in an oven and bake it for a set time. In this way, the connection between the chip 202 and the light-emitting area can be made firm.

[0040] In manufacturing step 1), after the chip 202 is fixed in the light-emitting area, the temperature range when placing the light source in the oven for baking is between 150°C and 190°C, and the temperature can preferably be 170°C.

[0041] In manufacturing step 1), after the chip 202 is fixed in the light-emitting area, the baking time range when placing the light source in the oven is between 2.5 hours and 3.5 hours, and the time can preferably be 3 hours.

[0042] In this embodiment, in manufacturing step 2), after the first dam formation on the substrate 200, use a small current to test the electrical connection between the chip 202 and the circuit structure.

[0043] In manufacturing step 3), after dispensing the light-emitting area, after the fluoride phosphor in the primary fluorescent glue has settled for a set time, place the light source in an oven for baking so that the primary fluorescent glue 300 is fixed in the light-emitting area.

[0044] In manufacturing step 3), the top of the primary fluorescent glue 300 is lower than the top of the primary dam 101. In this way, the primary fluorescent glue 300 will not overflow the surrounding range of the primary dam 101.

[0045] In manufacturing step 5), the secondary fluorescent glue 301 covers the entire primary fluorescent glue 300 from top to bottom. The secondary fluorescent glue 301 has a glue surface arranged outward, and the glue surface is spherical.

[0046] In this embodiment, in manufacturing step 2), during the first dam-building operation, intermittent dispensing is performed on the outer periphery of the light-emitting area to form the primary dam 101. The top of the primary dam 101 forms a plurality of downwardly concave grooves, and the plurality of grooves are arranged at intervals along the circumferential direction of the primary dam 101; an outer through-hole 400 is provided in the outer side of the primary dam 101. The outer through-hole 400 communicates with the groove inward and communicates with the outside of the primary dam 101 outward. Along the direction from inside to outside, the outer through-hole 400 is arranged obliquely downward.

[0047] In manufacturing step 4), after the second dam-building is performed on the primary dam 101, the bottom of the secondary dam 100 covers the top of the primary dam 101 and fills the plurality of grooves and the outer through-hole 400.

[0048] Through intermittent dispensing, a plurality of grooves can be formed on the formed primary dam 101. By forming the grooves, the bottom of the secondary dam 100 is embedded in the grooves, which facilitates the dispensing operation of the secondary dam 100 and makes a complete integrated structure formed between the primary dam 101 and the secondary dam 100.

[0049] After the primary dam 101 is baked and shaped, other equipment can be used to form a plurality of outer through-holes 400 on the primary dam 101, or, during the formation of the primary dam 101, the outer through-holes 400 can also be formed synchronously. In this way, the secondary dam 100 fills into the outer through-holes 400, the structure of the primary dam 101 and the secondary dam 100 is more stable, and when filling into the grooves, the outer through-holes 400 play a role in ventilation.

[0050] In this embodiment, an inner through-hole is provided in the inner side of the primary dam 101. The inner through-hole communicates with the groove outward and communicates with the light-emitting area inward; the inner through-hole is bent and includes an outer section 402 and an inner section 401. The inner section 401 and the outer section 402 are butt-connected and communicated to form a butt joint position. Along the butt joint position to the end of the inner through-hole, the inner section 401 and the outer section 402 are respectively arranged obliquely upward.

[0051] In manufacturing step 3), after dispensing in the light-emitting area, the primary fluorescent glue 300 fills the inner section 401 of the inner through-hole, and the outer section 402 of the inner through-hole is in a vacant state;

[0052] In manufacturing step 4), after the second dam is formed on the primary dam 101, the bottom of the secondary dam 100 covers the top of the primary dam 101 and fills the plurality of grooves and the outer section 402 of the inner through-hole.

[0053] The bottom of the secondary dam 100 is simultaneously embedded in the outer section 402 of the inner through-hole. Cooperating with the secondary dam 100 being embedded in the outer through-hole 400 can make the connection between the secondary dam 100 and the primary dam 101 more stable. The primary fluorescent glue 300 is embedded in the inner section 401 of the inner through-hole, which can make the outer periphery of the primary fluorescent glue 300 stable and avoid local deformation and other phenomena of the primary fluorescent glue 300 caused by extrusion from above during the dispensing of the fluorescent glue 301.

[0054] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for manufacturing a high luminous efficacy and high voltage resistant light source, characterized in that, It includes the following manufacturing steps: 1). Provide a substrate, on which there are a light-emitting area and a circuit structure. Fix a chip in the light-emitting area, and electrically connect the chip and the circuit structure with a gold wire; 2). Conduct a first dam formation on the substrate to form a primary dam, and the primary dam is arranged around the outer periphery of the light-emitting area; 3). Dispense glue in the light-emitting area to form a primary fluorescent glue, and the primary fluorescent glue includes a low-refractive-index silica gel, and a fluoride phosphor is mixed in the low-refractive-index silica gel; 4). Conduct a second dam formation on the primary dam to form a secondary dam, and the secondary dam covers the primary dam. The primary dam and the secondary dam form an integral dam structure that surrounds the outer periphery of the light-emitting area; 5). Dispense glue in the light-emitting area to form a secondary fluorescent glue, and the secondary fluorescent glue includes a high-refractive-index silica gel, and the secondary fluorescent glue covers the primary fluorescent glue; In the manufacturing step 2), during the process of conducting the first dam formation operation, intermittent dispensing is carried out on the outer periphery of the light-emitting area to form the primary dam. Multiple downwardly concave grooves are formed on the top of the primary dam, and the multiple grooves are arranged at intervals along the circumferential direction of the primary dam; An outer through-hole is provided in the outer side of the primary dam. The outer through-hole communicates with the groove inwardly and communicates with the outside of the primary dam outwardly. Along the direction from inside to outside, the outer through-hole is arranged obliquely downward; In the manufacturing step 4), after the second dam formation is carried out on the primary dam, the bottom of the secondary dam covers the top of the primary dam and fills multiple grooves and the outer through-hole; 2. The method for manufacturing a high luminous efficacy and high voltage resistant light source according to claim 1, wherein, In the manufacturing step 1), after the chip is fixed in the light-emitting area, place the light source in an oven and bake it for a set time; 3. The method for manufacturing a high luminous efficiency and high voltage resistant light source according to claim 2, wherein In the manufacturing step 1), when the chip is fixed in the light-emitting area, the temperature range when the light source is placed in the oven for baking is between 150°C and 190°C; 4. The method for manufacturing a high luminous efficacy and high voltage resistant light source according to claim 2, wherein In the manufacturing step 1), when the chip is fixed in the light-emitting area, the time range when the light source is placed in the oven for baking is between 2.5 hours and 3.5 hours; 5. The method for manufacturing a high luminous efficacy and high voltage resistant light source according to claim 1, wherein, In the manufacturing step 2), after the first dam formation is carried out on the substrate, use a small current to test the electrical connection between the chip and the circuit structure; 6. The method for manufacturing a high luminous efficiency and high voltage resistant light source according to any one of claims 1 to 5, characterized in that, In the manufacturing step 3), after dispensing glue in the light-emitting area, wait for the fluoride phosphor in the primary fluorescent glue to settle for a set time, and then place the light source in an oven for baking to fix the primary fluorescent glue in the light-emitting area; 7. The method for manufacturing a high luminous efficiency and high voltage resistant light source according to any one of claims 1 to 5, characterized in that, In the manufacturing step 3), the top of the primary fluorescent glue is lower than the top of the primary dam; 8. The method for manufacturing a high luminous efficacy and high voltage resistant light source according to any one of claims 1 to 5, characterized in that, In the manufacturing step 5), the secondary fluorescent glue covers the entire primary fluorescent glue from top to bottom. The secondary fluorescent glue has a glue surface arranged outward, and the glue surface is spherical; 9. The manufacturing method of the high luminous efficiency and high voltage resistant light source according to any one of claims 1 to 5, characterized in that, An inner through-hole is provided in the inner side of the primary dam. The inner through-hole communicates with the groove outwardly and communicates with the light-emitting area inwardly. The inner through-hole is bent and includes an outer section and an inner section. The inner section and the outer section are butt-connected and communicated to form a butt joint position. Along the butt joint position to the end of the inner through-hole, the inner section and the outer section are respectively arranged obliquely upward; In the manufacturing step 3), after dispensing glue on the light-emitting region, the inner segment of the inner through-hole is filled with the primary fluorescent glue, and the outer segment of the inner through-hole is in a vacant state; In the manufacturing step 4), after the second dam formation on the primary dam, the bottom of the secondary dam covers the top of the primary dam and fills multiple grooves and the outer segment of the inner through-hole.

Images