A side gate AlGaN / GaN heterojunction field effect transistor with auxiliary gate structure and working method and application

Abstract

The present application relates to a kind of with auxiliary gate structure's side gate AlGaN / GaN heterojunction field effect transistor and working method and application, belong to microelectronic research technical field, relative to with auxiliary gate structure's open gate AlGaN / GaN heterojunction field effect transistor, the present application introduces by a pair of not with channel contact, symmetrically distributed in the two sides of channel and the shape same metal electrode composition side gate, the two-dimensional electron gas under side gate does not participate in conduction, only drain-source channel conduction, so that the present application is used as low-power class A voltage amplifier, input voltage signal can be from 0V start to negative bias variation. By applying different bias to side gate and auxiliary gate, different device operating modes can be obtained, making the application of the present application in the circuit more flexible and more suitable for the increasingly complex integrated circuit field.

Description

Technical Field

[0001] This invention relates to a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure, its operating method, and its application, belonging to the field of microelectronics research technology. Background Technology

[0002] GaN material is a key representative of third-generation semiconductors. Compared to first- and second-generation semiconductors, GaN material has a larger bandgap, higher electron saturation drift velocity, and greater breakdown field strength. Electronic devices based on GaN material have been extensively studied and widely used. AlGaN / GaN heterojunction field-effect transistors (HFETs) are an important representative of GaN-based electronic devices, possessing advantages such as high electron mobility and high breakdown voltage, and are widely used in high-frequency and high-power applications.

[0003] The inventors of this invention previously designed an open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure in their patent application CN202110625371.9. This design features an open-gate main gate and an unopened auxiliary gate structure between the main gate and the drain, effectively improving the current-voltage saturation characteristics of the open-gate device. By applying different potentials to the main gate and auxiliary gate, different device operating modes can be obtained, making it more suitable for the increasingly complex field of integrated circuits. However, a certain negative bias voltage needs to be applied to the main gate to deplete the two-dimensional electron gas beneath it, i.e., turn off the main gate region, thus achieving conduction only in the open region. For this transistor to operate in a low-power Class A voltage amplifier mode, only the open region must be on. This requires that the input voltage signal can only be less than or equal to the negative bias voltage that turns off the main gate region, and cannot change from 0V to the negative bias voltage.

[0004] Therefore, researching a side-gate AlGaN / GaN heterojunction field-effect transistor that allows only the open region to conduct and operates in a low-power Class A voltage amplification mode, with the input voltage signal changing from 0V to negative bias, is of great application value and is extremely urgent. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure, where only the opening region is conductive, along with its operating method and application.

[0006] Terminology Explanation

[0007] A channel is a thin semiconductor layer between the source and drain regions in a field-effect transistor, through which current flows and is controlled by the gate bias voltage.

[0008] The technical solution of the present invention is as follows:

[0009] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure has a device structure generally similar to that of an open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure. It includes a source, a drain, and a gate. The gate is a dual-gate structure, comprising a side gate and an auxiliary gate. The side gate is a pair of identical metal electrodes symmetrically distributed on both sides of the channel, not in contact with the channel. The auxiliary gate is located on the channel between the source and drain. Except for the regions containing the source, drain, channel, side gate, and auxiliary gate, other regions are etched to a certain depth, isolating the two-dimensional electron gas beneath the side gate. This isolates the two-dimensional electron gas from the two-dimensional electron gas in the channel, as well as from the electronic systems of the source and drain.

[0010] According to the present invention, preferably, 0 < the distance between the side gate and the channel < 10 μm.

[0011] The optimal distance between the side gate and the channel is 2 μm.

[0012] According to the present invention, preferably, 0 < side gate width < 100 μm.

[0013] The optimal side gate width is 45μm.

[0014] According to the present invention, preferably, 0 < the length of the longest part of the side gate < 20 μm.

[0015] According to the present invention, preferably, 0 < the length of the shortest part of the side gate ≤ the length of the longest part of the side gate.

[0016] In the optimal configuration, the longest length of the side gate is 14 μm, and the shortest length of the side gate is 10 μm. The length is defined as the parallelism of the channels, and the width as the perpendicularity of the channels.

[0017] According to the present invention, preferably, 0 < the distance between the auxiliary gate and the drain ≤ the distance between the source and the auxiliary gate.

[0018] According to the present invention, preferably, 0 < the distance between the source and the auxiliary gate < the distance between the source and the drain.

[0019] According to the present invention, preferably, 0 < auxiliary gate length < distance between source and drain.

[0020] According to the present invention, preferably, the width of the auxiliary gate is equal to the width of the channel.

[0021] In the most preferred embodiment, the distance between the source and the drain is 20 μm, the length of the auxiliary gate is 2 μm, the distance between the source and the auxiliary gate is 16 μm, and the distance between the auxiliary gate and the drain is 2 μm.

[0022] According to the present invention, preferably, 0 < channel width < 10 μm.

[0023] The most preferred channel width is 2μm or 3μm.

[0024] This invention relates to a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate. During normal operation, a constant bias voltage (0V or negative bias voltage) is applied to the auxiliary gate, while a varying bias voltage is applied to the side gate. As the bias voltage on the side gate changes from 0V to negative bias voltage, under the same drain-source bias voltage, the channel current decreases as the negative bias voltage of the side gate increases. When a certain negative bias voltage is applied to the side gate, the channel will be cut off. Thereafter, when an even more negative bias voltage is applied to the side gate, the channel current remains unchanged and is approximately 0A.

[0025] The physical mechanism of channel current modulation by the side-gate mainly involves two aspects. Firstly, applying a negative bias voltage to the side-gate generates an edge electric field. This edge electric field acts on the two-dimensional electron gas (2D electron gas) in the channel, reducing its width while maintaining its density. The more negative the bias voltage applied to the side-gate, the smaller the width of the 2D electron gas in the channel, resulting in a higher channel resistance and a lower channel current. Secondly, in AlGaN / GaN heterojunction field-effect transistors, the scattering mechanisms affecting the mobility of the 2D electron gas mainly include polarized optical phonon (POP) scattering, polarized Coulomb field (PCF) scattering, acoustic deformation potential (DP) scattering, piezoelectric (PE) scattering, interfacial roughness scattering (IFR), and dislocation (DIS) scattering. Under certain conditions, all scattering mechanisms except for polarized Coulomb field scattering are only related to the density of the 2D electron gas in the channel. Under a given drain-source bias, since the density of the two-dimensional electron gas in the channel remains constant regardless of the bias voltage of the side gate, the scattering intensity of electrons by other scattering mechanisms does not change with the bias voltage of the side gate. However, polarized Coulomb field scattering is related not only to the density of the two-dimensional electron gas but also to the additional polarization charge density at the AlGaN / GaN interface below the side gate. Therefore, the more negative the bias voltage applied to the side gate, the greater the strain change in the AlGaN barrier layer below the side gate due to the inverse piezoelectric effect, the greater the additional polarization charge density at the AlGaN / GaN interface below the side gate, and the stronger the scattering of the two-dimensional electron gas by the polarized Coulomb field scattering. This results in a lower mobility of the two-dimensional electron gas, a higher channel resistance, and a lower channel current.

[0026] Because the trench of a certain width isolates the side gate from the channel, the effect of the edge electric field and polarized Coulomb field scattering of the side gate on the two-dimensional electron gas in the channel is weak, thus the side gate's ability to modulate the channel current is weak. In this operating mode, a negative bias voltage of tens of volts needs to be applied to the side gate to turn off the channel, therefore the input voltage signal can vary over a wide range. Furthermore, because the etched trench isolates the side gate from the channel, the source, and the drain, the two-dimensional electron gas under the side gate is neither connected to the two-dimensional electron gas in the channel nor to the electronic systems of the source and drain. Therefore, the two-dimensional electron gas under the side gate does not contribute to the channel current, and given the small width of the channel, the saturation current is very small. Therefore, this invention is very suitable as a low-power Class A voltage amplifier.

[0027] A method for operating a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure, by applying different bias voltages to the side gate and the auxiliary gate, achieves different operating modes:

[0028] Mode 1: A varying bias voltage is applied to the side gate, while a constant bias voltage (0V or negative bias) is applied to the auxiliary gate. As the bias voltage on the side gate changes from 0V to negative bias, under the same drain-source bias, the channel current decreases as the negative bias voltage of the side gate increases. When a certain negative bias voltage is applied to the side gate, the channel will be cut off. Afterward, applying an even more negative bias voltage to the side gate does not change the channel current, which remains constant and is approximately 0A. In this mode, under a certain drain-source bias voltage, the channel current changes with the side gate bias voltage; that is, the channel current is controlled by the side gate. Under a certain side gate bias voltage, as the drain-source bias increases, the device current enters the saturation region from the linear region. The pinch-off of the channel under the auxiliary gate is the reason for the device current saturation. The presence of the auxiliary gate ensures good current-voltage saturation characteristics. The two-dimensional electron gas under the side gate does not participate in conduction; only the drain-source channel is conducting, and the channel width is very narrow, so the device saturation current is very small. When used as a low-power Class A voltage amplifier, this mode allows for a wide range of input voltage signal variations, starting from 0V and gradually changing towards negative bias.

[0029] Mode 2: A varying bias voltage is applied to the auxiliary gate and a constant bias voltage is applied to the side gate. The constant bias voltage is 0V or a negative bias voltage. In this mode, the auxiliary gate controls the channel current and the side gate controls the channel resistance. The more negative the constant bias voltage applied to the side gate, the greater the channel resistance, the more the threshold voltage of the device will shift to the positive direction, and the lower the transconductance of the device will be.

[0030] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is used in the fabrication of electronic integrated circuits. The transistor in the electronic integrated circuit is a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure.

[0031] Unless otherwise described in this invention, all provisions are based on existing techniques in the field.

[0032] The beneficial effects of this invention are as follows:

[0033] 1. The present invention sets a side gate (composed of a pair of metal electrodes that do not contact the channel, are symmetrically distributed on both sides of the channel and have the same shape). The two-dimensional electron gas under the side gate does not participate in conduction. Only the drain-source channel is conducting. When operating in a low-power Class A voltage amplification mode, the input voltage signal can change from 0V to negative bias.

[0034] 2. The present invention consists of a source, a drain, a side gate, and an auxiliary gate forming a four-terminal device. By applying different bias voltages to the side gate and the auxiliary gate, multiple device operating modes can be achieved. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of the open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure used for comparison in Comparative Example 1.

[0036] Where S represents the source, G represents the gate, D represents the drain, G11 represents the main gate, and G22 represents the auxiliary gate;

[0037] Figure 2 This is a schematic diagram of the structure of the side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure in Embodiments 1 and 2 of the present invention;

[0038] Where S represents the source, G represents the gate, D represents the drain, G1 represents the side gate, and G2 represents the auxiliary gate.

[0039] Figure 3a This is the current-voltage characteristic curve of the AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure in Embodiment 1 of the present invention. At this time, the device is operating in mode 1. The horizontal axis is voltage and the vertical axis is current.

[0040] Figure 3b This is the current-voltage characteristic curve of the AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure in Embodiment 2 of the present invention. At this time, the device is operating in mode 1. The horizontal axis is voltage and the vertical axis is current.

[0041] Figure 3c The current-voltage characteristic curves of the open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure used for comparison in Comparative Example 1 are shown, with voltage on the horizontal axis and current on the vertical axis.

[0042] Figure 3dThis is the transfer characteristic curve of the AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure in Embodiment 2 of the present invention. At this time, the device is operating in mode 1. The horizontal axis is voltage and the vertical axis is current.

[0043] Figure 3e The graph shows the transfer characteristic curve of the AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure in Embodiment 1 of the present invention. The device is operating in mode 2 at this time; the horizontal axis represents voltage and the vertical axis represents current.

[0044] Figure 3f This is the transconductance-voltage curve of the AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure in Embodiment 1 of the present invention. At this time, the device is operating in mode 2. The horizontal axis is voltage and the vertical axis is transconductance. Detailed Implementation

[0045] The present invention will be further described below with reference to the embodiments and accompanying drawings, but is not limited thereto.

[0046] Example 1:

[0047] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure includes a source (S), a drain (D), a side gate (G1), and an auxiliary gate (G2). The side gate is a pair of identical metal electrodes symmetrically distributed on both sides of the channel, not in contact with the channel. The auxiliary gate is located on the channel between the source and drain. Except for the regions containing the source, drain, channel, side gate, and auxiliary gate, other regions are etched to a certain depth, isolating the two-dimensional electron gas beneath the side gate. This isolates the side gate from the two-dimensional electron gas in the channel, and also from the electronic systems of the source and drain.

[0048] Its device structure is as follows Figure 2 As shown, the distance (L) between the source and drain of the device SD The distance between the source and the auxiliary gate is 20 μm. SG2 The distance between the auxiliary gate and the drain is 16 μm. G2D The width of the channel (W1) is 2μm, and the width of the auxiliary gate (W) is 2μm. G2 The length of the auxiliary gate is 2μm, and the length of the auxiliary gate (L) is 2μm. G2 The distance between the channel and the side gate (W2) is 2 μm, and the length of the shortest part of the side gate (L) is 2 μm. G1min The length of the longest part of the side gate is 10 μm (L). G2max The side gate width is 14μm, and the gate width (W) is 14μm. G1 The diameter is 45 μm. The length of the channel is parallel to the diameter of the channel. Figure 2 The length is measured horizontally, and the width is measured vertically. Figure 2 The vertical dimension represents the width.

[0049] Example 2:

[0050] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is described in Example 1, except that the channel width (W1) is 3 μm and the auxiliary gate width (W2) is 3 μm. G2 The value is 3μm.

[0051] Example 3:

[0052] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is described in Example 1, except that the distance between the side gate and the channel is 9 μm.

[0053] Example 4:

[0054] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is described in Example 1, except that the side gate width is 95 μm.

[0055] Example 5:

[0056] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is described in Example 1, except that the length of the shortest part of the side gate is equal to the length of the longest part of the side gate, which is 18 μm.

[0057] Example 6:

[0058] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is described in Example 1, except that the distance between the auxiliary gate and the drain is equal to the distance between the source and the auxiliary gate, which is 9 μm.

[0059] Example 7:

[0060] A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure is described in Example 1, except that the channel width is 8 μm.

[0061] Example 8:

[0062] An application of the side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure described in Example 1 in the fabrication of electronic integrated circuits, wherein the transistor in the electronic integrated circuit is a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure.

[0063] Comparative Example 1

[0064] An open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure includes a source S, a drain D, and a gate G located between the source S and the drain D. The gate G has a dual-gate structure, including a main gate G11 and an auxiliary gate G22. The main gate G11 includes a lateral opening, forming two different working regions, namely the gate region and the opening region.

[0065] Its device structure is as follows Figure 1 As shown, the distance (L) between the source and drain of the device SD The main gate length is 20 μm. G11 The distance between the main gate and the source is 12 μm. G11S The distance between the main gate and the drain is 2μm. G11D The width of the channel is 6 μm, the total channel width (W) is 20 μm, and the width of the opening region (W) is... O The length of the auxiliary gate is 3μm, and the length of the auxiliary gate is (L). G22 The distance between the auxiliary gate and the drain is 2μm. G22D The value is 2μm. Figures 1-2 These are schematic diagrams of two different AlGaN / GaN heterojunction field-effect transistors.

[0066] Test case

[0067] By applying different bias voltages to the side gate and the auxiliary gate, the side-gate AlGaN / GaN heterojunction field-effect transistor with the auxiliary gate structure of the present invention can achieve multiple operating modes.

[0068] Mode 1: A varying bias voltage is applied to the side gate, while a constant bias voltage (0V or negative bias) is applied to the auxiliary gate. In this mode, under a given drain-source bias voltage, the channel current varies with the side gate bias voltage, meaning the channel current is controlled by the side gate. Under a given side gate bias voltage, as the drain-source bias voltage increases, the device current moves from the linear region into the saturation region. The pinch-off of the channel beneath the auxiliary gate is the reason for the device current saturation. The presence of the auxiliary gate ensures good current-voltage saturation characteristics. The two-dimensional electron gas beneath the side gate does not participate in conduction; only the drain-source channel is conductive, and the channel width is very narrow, resulting in a very small saturation current. When used as a low-power Class A voltage amplifier, this mode allows for a wide range of input voltage signal variations, starting from 0V and gradually increasing towards a negative bias.

[0069] Mode 2: A varying bias voltage is applied to the auxiliary gate, and a constant bias voltage (0V or negative bias voltage) is applied to the side gate. In this mode, the auxiliary gate regulates the channel current, and the side gate regulates the channel resistance. The more negative the constant bias voltage applied to the side gate, the greater the channel resistance, the more positively the device's threshold voltage shifts, and the lower the device's transconductance.

[0070] Figures 3a-3cThe figures are the current-voltage characteristic curves of the AlGaN / GaN heterojunction field-effect transistors of Embodiment 1, Embodiment 2 and Comparative Example 1 of the present invention, respectively.

[0071] Figure 3a Implementation Example 1, which corresponds to working in Mode 1, Figure 3b Implementation Example 2, which corresponds to working in Mode 1, Figure 3c The response ratio is 1. Figure 3d The transfer characteristic curves for Example 2 operating in Mode 1. Figure 3e The transfer characteristic curve of Example 1 operating in Mode 2, Figure 3f The transconductance-voltage curve for Example 1 operating in Mode 2.

[0072] from Figure 3a It can be seen that when Example 1 operates in Mode 1, the gate bias voltage on the side gate changes from 0V to negative bias, resulting in a very small saturation current and low transconductance. This indicates that the side gate has a weak ability to modulate the channel current but a large control range, with a threshold voltage of approximately -20V. Figure 3b It can be seen that the threshold voltage of Example 2 operating in Mode 1 is approximately -35V. This is because the channel width of Example 2 is 3μm, while the channel width of Example 1 is 2μm. The larger the channel width, the more negative the threshold voltage, and the larger the control range of the side gate. From Figure 3c It can be seen that in Comparative Example 1, the saturation current and transconductance of the device are only very small when the gate bias voltage of the open-gate is applied to -3V. In Comparative Example 1, when the gate bias voltage of the open-gate is in the range of 0 to -3V, the saturation current and transconductance of the device are relatively large. Therefore, compared with the open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure, the side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure, when used as a low-power Class A voltage amplifier, allows the input voltage signal to change from 0V to a negative bias voltage.

[0073] from Figure 3d It can be seen that when Example 2 is operating in Mode 1, the more negative the constant bias voltage applied to the auxiliary gate, the smaller the channel current under the same side gate bias voltage.

[0074] from Figure 3e It can be seen that when Example 1 is operating in Mode 2, the more negative the constant bias voltage applied to the side gate, the more the threshold voltage of the device shifts to the positive direction.

[0075] from Figure 3f It can be seen that when Example 1 is operating in Mode 2, the more negative the constant bias voltage applied to the side gate, the lower the transconductance of the device.

Claims

1. A side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure, characterized in that, It includes a source, a drain, and a gate. The gate is a dual-gate structure, which includes a side gate and an auxiliary gate. The side gate is a pair of metal electrodes that are not in contact with the channel, are symmetrically distributed on both sides of the channel, and have the same shape. The auxiliary gate is located on the channel between the source and the drain. Except for the areas where the source, drain, channel, side gate, and auxiliary gate are located, other areas are etched to a certain depth.

2. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 1, characterized in that, 0 < Distance between the side gate and the channel < 10 μm.

3. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 2, characterized in that, The distance between the side gate and the channel is 2 μm.

4. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 1, characterized in that, 0 < side gate width < 100 μm.

5. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 4, characterized in that, The side gate width is 45 μm.

6. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 1, characterized in that, 0 < the length of the longest part of the side gate < 20 μm.

7. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 1, characterized in that, 0 < the length of the shortest part of the side fence ≤ the length of the longest part of the side fence.

8. The side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure according to claim 7, characterized in that, The longest length of the side gate is 14 μm, and the shortest length of the side gate is 10 μm.

9. The side-gate AlGaN / GaN heterojunction field-effect transistor with auxiliary gate structure according to claim 1, characterized in that, 0 < distance between auxiliary gate and drain ≤ distance between source and auxiliary gate, 0 < auxiliary gate length < distance between source and drain.

10. The side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure according to claim 9, characterized in that, The distance between the source and drain is 20 μm, the length of the auxiliary gate is 2 μm, the distance between the source and the auxiliary gate is 16 μm, and the distance between the auxiliary gate and the drain is 2 μm.

11. The side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure according to claim 1, characterized in that, The width of the auxiliary gate is equal to the width of the channel.

12. The side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure according to claim 1, characterized in that, 0 < channel width < 10 μm.

13. The side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure according to claim 12, characterized in that, The channel width is 2 μm or 3 μm.

14. A method for operating a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure as described in claim 1, characterized in that, Different operating modes can be achieved by applying different bias voltages to the side gate and auxiliary gate: Mode 1: A varying bias voltage is applied to the side gate, while a constant bias voltage is applied to the auxiliary gate. The constant bias voltage is either 0 V or a negative bias voltage. As the bias voltage on the side gate changes from 0 V to a negative bias voltage, under the same drain-source bias voltage, the channel current decreases as the negative bias voltage of the side gate increases. When a certain negative bias voltage is applied to the side gate, the channel will be cut off. After that, applying a more negative bias voltage to the side gate will keep the channel current constant and approximately 0 A. In this mode, under a certain drain-source bias voltage, the channel current changes with the bias voltage of the side gate, and the channel current is regulated by the side gate. Under a certain side gate bias voltage, as the drain-source bias voltage increases, the device current enters the saturation region from the linear region. Mode 2: A varying bias voltage is applied to the auxiliary gate and a constant bias voltage is applied to the side gate. The constant bias voltage is 0 V or a negative bias voltage. In this mode, the auxiliary gate controls the channel current and the side gate controls the channel resistance. The more negative the constant bias voltage applied to the side gate, the greater the channel resistance, the more the threshold voltage of the device will shift to the positive direction, and the lower the transconductance of the device will be.

15. An application of a side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure in the fabrication of electronic integrated circuits, characterized in that, The transistor in the electronic integrated circuit is the side-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure as described in any one of claims 1-13.

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