A substrate support apparatus and a substrate processing apparatus

Abstract

The application provides a substrate support device, comprising: a tray arranged in a reaction cavity of a substrate processing device and used for supporting a substrate; a first limiting part arranged on a bottom surface of the tray; and a sleeve having a cylindrical structure, the sleeve being arranged below the tray and providing support for the tray, a second limiting part being arranged on a side wall of the sleeve and corresponding to the first limiting part, and the first limiting part and the corresponding second limiting part being matched to limit the relative movement of the sleeve and the tray in a horizontal direction when the sleeve and the tray rotate. The application also provides a substrate processing device. According to the application, synchronous rotation of the tray and the sleeve can be ensured, the tray is uniformly heated, and the uniformity of the surface temperature of the substrate is ensured.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition, and particularly to a substrate support device and substrate processing equipment. Background Technology

[0002] CVD (Chemical Vapor Deposition) refers to the process by which reactants undergo a chemical reaction on a substrate surface under gaseous conditions to form a thin film. CVD equipment is specifically designed to perform chemical vapor deposition on substrate surfaces. MOCVD (Metal-Organic Chemical Vapor Deposition) equipment, as a typical CVD device, provides the necessary temperature, pressure, and chemical gas composition for growing light-emitting crystal structures, such as GaN (gallium nitride), on a substrate (e.g., a sapphire substrate).

[0003] The MOCVD equipment contains a vacuum reaction chamber with a tray inside. A bushing is positioned below the tray and provides support. The tray is rotated by driving the bushing to rotate around its central axis (through friction between the bushing and the tray). A gap exists between the outer periphery of the tray bottom and the inner wall of the bushing. This gap prevents the bushing from bursting due to thermal expansion at high temperatures and reduces the contact area between the bushing and the tray, minimizing heat loss due to heat transfer. A heating lamp is positioned below the tray and within the area enclosed by the bushing, providing heat to the tray and transferring it to the substrate. Reactive gases are introduced into the reaction chamber through an intake device (e.g., a spray head) and delivered to the surfaces of multiple substrates placed on the tray for chemical reactions, thereby growing specific crystal structures such as GaN structures.

[0004] In CVD processes, especially MOCVD, maintaining uniform substrate surface temperature is crucial for ensuring optimal process performance and preventing defects in the grown material. When the bushing rotates at high speed, the aforementioned gap inevitably causes horizontal relative displacement between the tray and bushing, resulting in misalignment and asynchronous rotation. This not only easily damages the bushing but also leads to uneven heating of the tray, further affecting the uniformity of substrate surface temperature. Summary of the Invention

[0005] The purpose of this invention is to provide a substrate support device that, by limiting the relative horizontal movement of the bushing and the tray during rotation, enables the bushing and the tray to rotate synchronously, thereby ensuring uniform heating of the tray and thus guaranteeing the uniformity of the substrate surface temperature.

[0006] To achieve the above objectives, the present invention provides a substrate support device for a substrate processing apparatus, the substrate processing apparatus including a reaction chamber, the substrate support device comprising:

[0007] A tray is disposed within the reaction chamber to support the substrate; a first limiting portion is provided on the bottom surface of the tray.

[0008] The bushing has a cylindrical structure; the bushing is disposed below the tray and provides support for the tray; the side wall of the bushing is provided with a second limiting part corresponding to the position of the first limiting part; the relative movement of the bushing and the tray in the horizontal direction is restricted by the cooperation of the first limiting part and the corresponding second limiting part.

[0009] Optionally, the second limiting portion is disposed on the outer side of the bushing sidewall.

[0010] Optionally, a uniform heat-conducting part is provided in the central area of ​​the bottom surface of the tray to uniformly transfer the heat radiated by the heater under the tray to the substrate placed on the tray; the upper edge of the bushing is arranged around the outer periphery of the uniform heat-conducting part and is located between the first limiting part and the uniform heat-conducting part.

[0011] Optionally, the uniform heat-conducting part is disc-shaped, and the inner diameter of the bushing is larger than the outer diameter of the uniform heat-conducting part.

[0012] Optionally, the first limiting part includes a plurality of protrusions disposed on the bottom surface of the pallet, the plurality of protrusions being distributed along the circumferential direction of the pallet and corresponding to different positions on the outer edge of the pallet respectively; the second limiting part includes a plurality of limiting grooves corresponding to the plurality of protrusions respectively; the protrusions are embedded in the corresponding limiting grooves.

[0013] Optionally, the second limiting part includes a plurality of pairs of limiting blocks disposed on the side wall of the bushing, wherein the limiting groove is formed between the pairs of limiting blocks.

[0014] Optionally, the second limiting part includes a limiting ring surrounding the bushing sidewall, and the plurality of limiting grooves are distributed on the top surface of the limiting ring along the circumferential direction of the limiting ring.

[0015] Optionally, the second limiting part is disposed on the top of the outer side wall of the bushing; there are at least three bosses, and the multiple bosses are evenly distributed.

[0016] Optionally, at least one of the boss and the corresponding limiting groove is inclined; the boss gradually tapers inward from the top to the bottom; the inclined limiting groove has a structure that is wider at the top and narrower at the bottom.

[0017] Optionally, the first limiting part includes multiple limiting grooves, which are distributed along the circumferential direction of the tray and correspond to different positions on the outer edge of the tray respectively; the second limiting part includes multiple bosses provided on the side wall of the bushing, which are respectively embedded in the multiple limiting grooves.

[0018] Optionally, the first limiting part includes a plurality of pairs of limiting blocks disposed on the bottom surface of the tray, wherein the limiting groove is formed between the pairs of limiting blocks.

[0019] Optionally, the first limiting part includes a limiting ring disposed on the bottom surface of the tray, and the plurality of limiting grooves are distributed on the bottom surface of the limiting ring along the circumferential direction of the limiting ring.

[0020] Optionally, at least one of the boss and the corresponding limiting groove is inclined; the boss gradually tapers inward from the bottom to the top; the inclined limiting groove has a structure that is narrower at the top and wider at the bottom.

[0021] Optionally, the second limiting part is disposed at the top of the outer wall of the bushing; there are at least three limiting grooves; the multiple limiting grooves are evenly distributed.

[0022] Optionally, the boss and the corresponding limiting groove can be in line contact or surface contact.

[0023] Optionally, the tilt angle is 20° to 70°.

[0024] Optionally, the top surface of the bushing is in sealed contact with the bottom surface of the tray.

[0025] Optionally, the substrate support device further includes a drive device for driving the bushing to rotate about its own central axis.

[0026] Optionally, the central area of ​​the top surface of the tray is provided with a recess for accommodating the substrate. Along the circumferential direction of the recess, the inner wall of the recess is provided with a plurality of inwardly protruding protrusions, and the substrate is supported by the top surface of the protrusions.

[0027] Optionally, the material of the tray and bushing can be any one of graphite, quartz, graphite plated with SiC, graphite plated with TaC, graphite plated with WC, graphite plated with NbC, graphite plated with MoC, pure BC, BN, SiC, TaC, AlC, AlN, NbC, NbN, and Al2O3.

[0028] The present invention also provides a substrate processing apparatus, wherein the reaction chamber of the substrate processing apparatus includes:

[0029] The substrate support device as described in this invention.

[0030] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0031] 1) The substrate support device of the present invention restricts the relative movement of the bushing and the tray in the horizontal direction when they rotate by the cooperation of the first limiting part and the second limiting part provided at the bottom of the tray and the side wall of the bushing; the present invention enables the bushing and the tray to rotate synchronously, so that the tray is heated evenly, thereby ensuring the uniformity of the substrate surface temperature.

[0032] 2) The present invention sets the second limiting part on the side wall of the bushing without changing the structure of the top surface of the bushing, and the first limiting part also does not interfere with the top surface of the bushing, effectively ensuring that the top surface of the bushing is in sealed contact with the bottom surface of the tray, preventing the process gas in the reaction chamber from entering the bushing and corroding the heater inside the bushing; at the same time, it prevents stray light from the heater from entering the reaction chamber from between the top surface of the bushing and the bottom surface of the tray, interfering with the temperature inside the reaction chamber.

[0033] 3) In this invention, a disc-shaped uniform heat-conducting part is provided in the central area of ​​the bottom surface of the tray (corresponding to the placement position of the substrate on the tray). The heat radiated by the heater under the tray is first absorbed by the uniform heat-conducting part. Since the uniform heat-conducting part has a thickness, it can radiate the absorbed heat to the substrate evenly, effectively ensuring the uniformity of the substrate surface temperature. The uniform heat-conducting part is located inside the bushing. At a certain temperature, its thermal expansion will contact the inner wall of the bushing, which has an auxiliary effect in limiting the relative displacement between the bushing and the tray.

[0034] 4) The second limiting part of the present invention is provided on the outer wall, which will not interfere with the internal structure of the bushing, and does not require reducing the radius of the uniform heat conduction part, thereby further ensuring the uniformity of the substrate surface temperature.

[0035] 5) The boss and at least one of the corresponding limiting grooves of the present invention are inclined, which can realize the self-alignment of the tray and the bushing; at the same time, the boss and the limiting groove are in line contact, which reduces the friction between the boss and the limiting groove, making it easier for the tray to self-align with the bushing. Attached Figure Description

[0036] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0037] Figure 1 This is a schematic diagram of a substrate processing device;

[0038] Figure 2 for Figure 1 Schematic diagram of the eccentric rotation of the middle tray and bushing;

[0039] Figure 3 for Figure 2 AA view;

[0040] Figure 4 This is a perspective view of the tray and bushing of the substrate support device in Embodiment 1 of the present invention;

[0041] Figure 4A for Figure 4 A bottom view;

[0042] Figure 5 , Figure 6 This is a schematic diagram illustrating different ways of forming the limiting groove in Embodiment 1 of the present invention;

[0043] Figure 6A for Figure 6 A bottom view;

[0044] Figure 7 This is a perspective view of the tray and bushing of the substrate support device in Embodiment 2 of the present invention;

[0045] Figure 7A for Figure 7 A bottom view;

[0046] Figure 8 This is a schematic diagram of another way of forming the limiting groove in Embodiment 2 of the present invention;

[0047] Figure 9 This is a perspective view of the tray and bushing in Embodiment 3 of the present invention;

[0048] Figure 9A This is a schematic diagram of Embodiment 3 of the present invention, in which both the boss and the limiting groove are inclined and the boss and the limiting groove are in surface contact.

[0049] Figure 9B This is a schematic diagram of Embodiment 3 of the present invention, in which both the boss and the limiting groove are inclined and the boss and the limiting groove are in line contact.

[0050] Figure 9C This is a schematic diagram of the third embodiment of the present invention, showing that the boss is not tilted and the limiting groove is tilted;

[0051] Figure 9D This is a schematic diagram of the tilted boss and non-tilted limiting groove in Embodiment 3 of the present invention;

[0052] Figure 10A This is a schematic diagram of Embodiment 4 of the present invention, in which both the boss and the limiting groove are inclined and the boss and the limiting groove are in surface contact.

[0053] Figure 10B This is a schematic diagram of Embodiment 4 of the present invention, in which both the boss and the limiting groove are inclined and the boss and the limiting groove are in line contact.

[0054] Figure 10C This is a schematic diagram of the fourth embodiment of the present invention, in which the boss is not tilted and the limiting groove is tilted;

[0055] Figure 10D This is a schematic diagram of the fourth embodiment of the present invention, showing that the boss is tilted and the limiting groove is not tilted.

[0056] Figure 11 This is a cross-sectional view of the tray and bushing in Embodiment 5 of the present invention;

[0057] Figure 12 This is a schematic diagram of the substrate processing apparatus of the present invention. Detailed Implementation

[0058] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0059] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0060] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of one embodiment of the present invention.

[0061] Figure 1 This is a substrate processing apparatus 10 (which is an MOCVD apparatus). The substrate processing apparatus 10 includes a reaction chamber 2 having an air inlet device 14 and an air outlet device 17. The air inlet device 14 may be located at the top of the reaction chamber 2, and the air outlet device 17 may be located at the bottom of the reaction chamber 2, or the air inlet device 14 and the air outlet device 17 may be located opposite each other at both ends of the sidewall of the reaction chamber.

[0062] The reaction chamber 2 has a top wall 22 at the top, a bottom wall 24 at the bottom, and a cylindrical side wall 26 extending between the top wall 22 and the bottom wall 24. The top wall 22, the bottom wall 24, and the side wall 26 together form an airtight internal processing space 20, which can accommodate the gas ejected from the air inlet device 14. Although Figure 1The reaction chamber 2 shown is cylindrical, but other substrate processing devices 10 may also include reaction chambers 2 of other shapes, such as conical, square, hexagonal, octagonal or any other suitable shape.

[0063] A temperature probe (not shown in the figure) connected to an external temperature monitoring device will also be installed in the internal processing space 20 to monitor the temperature in the reaction chamber 2 during the process.

[0064] The intake device 14 is connected to a gas source for supplying process gases, which may include a carrier gas and a reactant gas, including Group III and Group V gases. In a typical metal-organic chemical vapor deposition process, the carrier gas may be nitrogen, hydrogen, or a mixture of nitrogen and hydrogen. The intake device 14 is configured to receive the various gases and guide the process gases to flow in a generally downward direction.

[0065] The intake device 14 is also provided with a fluid channel that communicates with an external cooling system. The coolant in the fluid channel keeps the temperature of the intake device 14 at the required temperature during the process. Similar fluid channels (not shown) can be provided on the top wall 22, bottom wall 24 and side wall 26 of the reaction chamber 2.

[0066] The exhaust device 17 is configured to discharge gas (including waste gas generated during the reaction and some gas that did not have time to participate in the reaction) from the internal processing space 20 of the reaction chamber 2. The exhaust device 17 includes an outlet 70 located at or near the bottom of the reaction chamber 2, and a pump 18 located outside the reaction chamber 2 and communicating with the outlet 70, through which the pump 18 provides the power for gas flow.

[0067] The reaction chamber 2 is also provided with a substrate inlet / outlet 30 for the substrate W to be moved in and out, and an annular reaction chamber liner 34 that is located adjacent to the sidewall 26 and can move up and down. The reaction chamber liner 34 has a closed position at the top and an open position at the bottom. After the substrate W is processed, the reaction chamber liner 34 can be lowered (to the open position) to expose the substrate inlet / outlet 30, and then the substrate W can be removed from the substrate inlet / outlet 30. The next batch of substrates W to be processed can also be moved into the substrate inlet / outlet 30. After the substrate W is moved in, the reaction chamber liner 34 can be raised (to the closed position) to cover the substrate inlet / outlet 30, thereby separating the internal processing space 20 from the substrate inlet / outlet 30. When in the closed position, the area defined by the reaction chamber liner 34 is symmetrically circular, and the substrate inlet / outlet 30 is "hidden" behind the reaction chamber liner 34 and therefore does not come into contact with the processing gas. The area that the processing gas can come into contact with is the circumferential boundary defined by the reaction chamber liner 34, which ensures the uniformity of the entire processing environment. The drive mechanism (not shown) used to control and drive the up-and-down movement of the reaction chamber liner 34 can be any type of actuator, such as a mechanical, electromechanical, hydraulic or pneumatic actuator.

[0068] Although the reaction chamber liner 34 shown is cylindrical, it can also be other shapes, such as square, hexagonal, octagonal or any other suitable shape.

[0069] The reaction chamber 2 is also equipped with a tray 101, a bushing 102, and multiple heaters 103. The tray 101 is generally disc-shaped, and the bushing 102 is located below the tray and provides support for it. The heaters 103 are located below the tray and within the area enclosed by the bushing 102, and are used to radiate heat energy to the tray 101. The tray 101 then transfers the heat energy provided by the heaters 103 to the substrate W. An external controller adjusts the heating power of the heaters 103 based on the temperature value fed back by the temperature probe. Ideally, the tray 101 and the bushing 102 are in sealed contact. The bushing 102 prevents processing gases from seeping into the bushing and corroding the components inside. At the same time, the bushing 102 prevents stray light from the heaters 103 from entering the internal processing space 20 and interfering with the temperature value obtained by the temperature probe. A heat shield (not shown in the figure) can also be provided below the heater, for example, set parallel to the tray 101, to help guide heat from the heater 103 upward toward the tray 101, rather than downward toward the bottom wall 24 at the bottom of the reaction chamber 2.

[0070] During the process, the various processing gases output from the air intake device 14 partially mix during downward diffusion, but it cannot be guaranteed that they will be fully mixed by the time they reach the upper surface of the tray. Therefore, it is necessary to drive the bushing 102 to rotate at a high speed (600-1200 rpm). The friction between the bushing 102 and the tray 101 causes the tray 101 to rotate at high speed. In this way, the different types of processing gases reaching the upper surface of the tray are fully mixed under the drive of the high-speed rotating tray 101.

[0071] like Figure 1 , Figure 2 As shown, there is a gap between the outer periphery of the bottom of the tray and the inner wall of the bushing. This gap prevents the bushing 102 from bursting due to thermal expansion at high temperatures. It also reduces the contact area between the bushing 102 and the tray 101, thereby reducing heat loss caused by heat transfer between the tray 101 and the bushing 102.

[0072] Figure 3 for Figure 2 AA view, Figure 3 The diagram shows the trajectory of bushing 102 during high-speed rotation. Due to the aforementioned gap, a horizontal relative displacement inevitably occurs between tray 101 and bushing 102, causing their rotation to be non-concentric and asynchronous. This not only easily damages bushing 102 but also leads to uneven heating of tray 101, thus affecting the uniformity of substrate surface temperature. Maintaining substrate surface temperature uniformity and preventing quality defects in the material grown on substrate W during CVD processes is a key concern in the industry.

[0073] Example 1

[0074] The present invention provides a substrate support device for a substrate processing apparatus, the substrate processing apparatus including a reaction chamber, the substrate support device including: a tray 201, a bushing 202, a first limiting part, a second limiting part, and a rotation drive device (not shown in the figure).

[0075] The tray 201 has a disc-shaped structure and is disposed within the reaction chamber to support the substrate. A first limiting portion is provided on the bottom surface of the tray. The bushing 202 has a cylindrical structure and is disposed below the tray, providing support for the tray 201. The bottom of the bushing is connected to the rotary drive device via a flange, which drives the bushing 202 and the tray 201 to rotate around the central axis of the bushing. In this embodiment, the rotary drive device is a permanent magnet motor. A second limiting portion is provided on the side wall of the bushing, corresponding to the position of the first limiting portion. The cooperation between the first and second limiting portions restricts the relative horizontal movement of the bushing 202 and the tray 201 during rotation.

[0076] like Figure 4 , Figure 4A As shown, the first limiting part includes a plurality of protrusions 204 disposed on the bottom surface of the tray. The plurality of protrusions 204 are distributed along the circumferential direction of the tray 201 and correspond to different positions on the outer edge of the tray. In a preferred embodiment, there are at least three protrusions 204, optionally as shown in the attached figure. Figure 4 The four or more bosses 204 are evenly distributed on the bottom surface of the pallet 201 along the circumferential direction.

[0077] In this embodiment, the boss 204 and the tray 201 are integrally manufactured. In other embodiments, the boss 204 and the tray 201 can also be fixedly connected by connectors (such as bolts).

[0078] The second limiting part includes multiple limiting grooves corresponding to the multiple bosses 204, with one boss 204 corresponding to one limiting groove. By embedding the bosses 204 into the corresponding limiting grooves, the tray 201 and the bushing 202 are detachably connected, restricting the relative horizontal movement of the bushing 202 and the tray 201 when they rotate. The second limiting part can be located on the outer or inner side of the bushing sidewall. In a preferred embodiment, the second limiting part is typically located on the outer side of the bushing sidewall for easy observation of the alignment between the bosses 204 and the limiting grooves. Furthermore, since the second limiting part is located on the outer sidewall of the bushing, there is no need to change the arrangement of the components within the bushing 202, and the uniformity of heating the tray 201 by the heater is not affected.

[0079] The limiting groove can be formed in a variety of ways:

[0080] 1) In this embodiment, as Figure 4 , Figure 4A As shown, the second limiting portion includes a plurality of paired limiting blocks 205 surrounding the bushing sidewall. The plurality of paired limiting blocks 205 are distributed along the circumferential direction of the bushing 202 and correspond to different bosses 204. The paired limiting blocks 205 are arranged along the circumferential direction of the bushing 202 rather than vertically, and a gap exists between the two limiting blocks 205, forming a limiting groove. To facilitate alignment between the bosses 204 and the limiting groove, in this embodiment, the plurality of paired limiting blocks 205 are all disposed at the top of the bushing sidewall and at approximately the same height.

[0081] 2) In another embodiment, such as Figure 5 As shown, the second limiting part includes a limiting ring 206 surrounding the bushing sidewall, and multiple limiting grooves distributed along the circumferential direction of the limiting ring 206 on the top surface of the limiting ring (the bottom surface of the tray is made to fit against the top surface of the bushing by controlling one or more of the setting height of the limiting ring 206 on the bushing sidewall and the depth of the limiting grooves). In a preferred embodiment, the limiting ring 206 is coaxial with the bushing 202. The limiting grooves can also be through grooves penetrating the top and bottom surfaces of the limiting ring.

[0082] 3) such as Figure 6 , Figure 6A As shown, the second limiting portion includes a plurality of limiting arcs 207 disposed along the circumferential direction of the bushing 202 on the side wall of the bushing. The plurality of limiting arcs 207 have approximately the same height and are concentric with the bushing 202. There is a gap between adjacent limiting arcs 207, which forms a limiting groove.

[0083] In this embodiment, the sidewall of the boss 204 is perpendicular to the horizontal plane (the boss 204 is not tilted). The boss 204 can be any of the following shapes: cylindrical, polygonal prism (e.g.) Figures 4 to 6 (as shown in the cuboid shape). The limiting groove has a shape that matches the boss 204, and the boss 204 and the limiting groove are in surface contact.

[0084] In this embodiment, the tray 201, boss 204, bushing 202, limiting block 205, limiting ring, and limiting arc 207 are made of graphite, quartz, graphite coated with SiC, graphite coated with TaC, graphite coated with WC, graphite coated with NbC, graphite coated with MoC, pure BC, BN, SiC, TaC, AlC, AlN, NbC, NbN, and Al2O3.

[0085] The substrate support device of the present invention restricts the relative horizontal movement of the bushing 202 and the tray 201 when they rotate by means of a first limiting part and a second limiting part disposed at the bottom of the tray and the side wall of the bushing, respectively. The present invention enables the bushing 202 and the tray 201 to rotate synchronously and concentrically, so that the tray 201 is heated evenly, thereby ensuring the uniformity of the substrate surface temperature.

[0086] This invention does not directly create a limiting groove on the top surface of the bushing, and the position of the boss 204 also avoids the top surface of the bushing. Therefore, this invention does not disrupt the sealed contact between the top surface of the bushing and the bottom surface of the tray. The substrate support device of this invention can prevent process gases in the reaction chamber from entering the bushing and corroding the heater 203 inside the bushing; at the same time, it can also prevent stray light from the heater 203 from entering the reaction chamber and interfering with the temperature probe detecting the temperature inside the reaction chamber.

[0087] Example 2

[0088] In this embodiment, the bottom surface of the tray is provided with a first limiting portion. The side wall (preferably the outer side wall) of the bushing is provided with a second limiting portion corresponding to the first limiting portion. The first limiting portion includes multiple limiting grooves, which are distributed along the circumferential direction of the tray 301 and correspond to different positions on the outer edge of the tray. The second limiting portion includes multiple bosses 304 disposed along the circumferential direction of the bushing 302 on the outer side wall of the bushing. The multiple bosses 304 are respectively embedded in the multiple limiting grooves, realizing a detachable connection between the bushing 302 and the tray, and restricting the relative horizontal movement of the bushing 302 and the tray 301 when they rotate.

[0089] In this embodiment, the multiple bosses 304 are evenly distributed, and the second limiting portion includes at least three bosses 304. To facilitate the alignment of the bosses 304 with the limiting groove, in a preferred embodiment, the multiple bosses 304 are disposed on the top of the outer wall of the bushing and have approximately the same height.

[0090] The limiting groove in this embodiment can be formed in multiple ways:

[0091] like Figure 7 , Figure 7A As shown, the first limiting part includes a plurality of pairs of limiting blocks 305 disposed on the bottom surface of the tray 301 along the circumferential direction of the tray 301, each pair of limiting blocks 305 corresponding to a boss 304. The pairs of limiting blocks 305 are arranged along the circumferential direction of the tray 301, and there is a gap between the two limiting blocks 305, which forms the limiting groove.

[0092] In another embodiment, such as Figure 8 As shown, the first limiting part includes a limiting ring 306 (concentric with the pallet 301) disposed on the bottom surface of the pallet, and multiple limiting grooves are distributed on the bottom surface of the limiting ring 306 along the circumferential direction. The inner diameter of the limiting ring is not less than the outer diameter of the bushing 302, and the outer diameter of the limiting ring is not greater than the diameter of the pallet. Figure 8 The inner diameter of the middle limiting ring is equal to the outer diameter of the bushing, and the outer diameter of the limiting ring is equal to the diameter of the tray. By controlling one or more of the setting height of the boss 304 on the side wall of the bushing and the depth of the limiting groove, the bottom surface of the tray is made to fit against the top surface of the bushing (the tray 301 and the bushing 302 are in sealed contact).

[0093] In this embodiment, the sidewall of the boss 304 is perpendicular to the horizontal plane (the boss 304 is not tilted), and the limiting groove has a shape that matches the boss 304. The boss 304 and the limiting groove are in surface contact.

[0094] Example 3

[0095] In this embodiment, the boss 404 and at least one of the corresponding limiting grooves are inclined, which facilitates the self-alignment of the tray 401 and the bushing 402. The boss 404 and the limiting groove can be in surface contact or line contact. When the boss 404 and the limiting groove are in line contact, the friction between them is reduced. Under the weight of the tray 401, the tray 401 not only easily self-aligns with the bushing 402, but also effectively ensures that the bottom surface of the tray fits against the top surface of the bushing. In this embodiment, the inclination angle is 20° to 70°.

[0096] In this embodiment, as Figure 9 As shown, the first limiting part includes multiple bosses 404 disposed on the bottom surface of the tray, which form limiting grooves through pairs of limiting blocks 405 disposed on the side wall of the bushing. The bosses 404 and their corresponding limiting grooves include the following configurations:

[0097] 1) such as Figure 9 As shown, both the boss 404 and the corresponding limiting groove are inclined. From the top to the bottom of the inclined boss 404, the boss 404 gradually tapers inward. The inclined limiting groove has a structure that is wider at the top and narrower at the bottom. Figure 9A As shown, the boss 404 and the corresponding limiting groove have the same inclination angle, and the boss 404 and the limiting groove are in surface contact. Alternatively, as... Figure 9B As shown, the inclination angle of the limiting groove is smaller than that of the boss 404, and the boss 404 and the limiting groove are in line contact. In this invention, the inclination angles of the limiting groove and the boss 404 refer to the angles (acute angles) between the sidewall of the limiting groove and the sidewall of the boss and the horizontal plane, respectively.

[0098] 1) such as Figure 9C As shown, the boss 404 is not tilted, but the corresponding limiting groove is tilted. This limiting groove has a structure that is wider at the top and narrower at the bottom, with the top width of the limiting groove greater than the width of the boss 404, and the bottom width of the limiting groove less than the width of the boss 404. The boss 404 and the limiting groove are in line contact.

[0099] 2) such as Figure 9D As shown, the boss 404 is inclined, while the corresponding limiting groove is not inclined. From the top to the bottom of the inclined boss 404, the boss 404 gradually tapers inward. The width of the limiting groove is greater than the width of the bottom of the boss, but not greater than the width of the top of the boss. There is a line contact between the limiting groove and the boss 404.

[0100] In this embodiment, the bottom surface of the tray is made to fit against the top surface of the bushing by controlling one or more of the following: the setting height of the limiting groove on the side wall of the bushing, the depth of the limiting groove, the inclination angle of the limiting groove, the width of the limiting groove, the inclination angle of the boss 404, and the width of the boss 404.

[0101] Example 4

[0102] In this embodiment, the second limiting portion includes a plurality of bosses 504 disposed on the side wall of the bushing. The bosses 504 are inclined to at least one of the corresponding limiting grooves. The bosses 504 and their corresponding limiting grooves include the following configurations:

[0103] 1) such as Figure 10A As shown, in this embodiment, the first limiting part includes a limiting ring 506 disposed at the bottom of the tray 501, and the bottom surface of the limiting ring 506 has multiple limiting grooves. Figure 10A The central boss 504 is not tilted, but the corresponding limiting groove is tilted. This limiting groove has a structure that is narrower at the top and wider at the bottom, with the bottom width of the limiting groove greater than the width of the boss 504, and the top width of the limiting groove less than the width of the boss 504. The boss 504 and the limiting groove are in line contact.

[0104] 2) such as Figure 10BAs shown, the boss 504 is inclined, while the corresponding limiting groove is not inclined. From the bottom to the top of the inclined boss 504, the boss 504 gradually narrows inward. The width of the limiting groove is greater than the width of the top of the boss, but not greater than the width of the bottom of the boss. There is a line contact between the limiting groove and the boss 504.

[0105] 3) such as Figure 10C As shown, both the boss 504 and the limiting groove are inclined. From the bottom to the top of the inclined boss 504, the boss 504 gradually tapers inward. The inclined limiting groove has a structure that is narrower at the top and wider at the bottom. Figure 10C As shown, the boss 504 and the corresponding limiting groove have the same inclination angle, and the boss 504 and the limiting groove are in surface contact. Alternatively, as... Figure 10D As shown, the inclination angle of the limiting groove is smaller than that of the boss 504, and the boss 504 and the limiting groove are in line contact.

[0106] Example 5

[0107] Figure 11 A substrate support device according to the present invention is shown. For example... Figure 11 As shown, the top surface of the tray 201 is provided with a circular recess 211 (concentric with the tray 201) for accommodating the substrate W. Along the circumferential direction of the recess 211, the inner wall of the recess is provided with a plurality of inwardly protruding protrusions 212. The top surface of the protrusions 212 supports the substrate W, reducing friction between the tray 201 and the substrate W.

[0108] The uniform heat-conducting part 209 is disposed on the bottom surface of the tray. In this embodiment, the uniform heat-conducting part 209 is disc-shaped, and its diameter is larger than that of the recessed part 211 than that of the tray 201. Due to the recessed part 211, the central area of ​​the tray becomes thinner, and the distance between the substrate W and the heater 203 is relatively close, which easily leads to uneven heating of the substrate W. The uniform heat-conducting part 209 compensates for the thickness loss in the central area of ​​the tray, enabling the heat radiated by the heater to be uniformly transferred to the substrate W placed on the tray.

[0109] like Figure 11 As shown, the outer wall of the bushing is provided with multiple pairs of limiting blocks 205. The inner diameter of the bushing 202 is larger than the outer diameter of the uniform heat-conducting part 209. At a certain temperature, the uniform heat-conducting part 209 expands due to heat and will come into contact with the inner wall of the bushing (but the force is small and will not damage the bushing), which plays an auxiliary role in limiting the relative displacement between the bushing 202 and the tray 201.

[0110] By placing the second limiting part on the outer wall of the bushing, the present invention eliminates the need to place the second limiting part between the inner wall of the bushing and the outer wall of the uniform heat conduction part, thus eliminating the need to reduce the radius of the uniform heat conduction part 209 and further ensuring the uniformity of the substrate surface temperature.

[0111] The present invention also provides a substrate processing apparatus, such as... Figure 12 As shown, the reaction chamber of the substrate processing apparatus includes:

[0112] The substrate support device as described in this invention.

[0113] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A substrate support apparatus for a substrate processing apparatus, the substrate processing apparatus including a reaction chamber, characterized by, The substrate support device comprises: A tray is arranged in the reaction cavity and used for supporting a substrate; a first limiting part is arranged on the bottom surface of the tray; A sleeve having a cylindrical structure is arranged below the tray and provides support for the tray; a second limiting part corresponding to the position of the first limiting part is arranged on the outer side of the side wall of the sleeve; the first limiting part and the corresponding second limiting part are movably inserted from top to bottom to limit the relative movement of the sleeve and the tray in the horizontal direction when the sleeve and the tray rotate.

2. The substrate support apparatus of claim 1, wherein, A uniform heat conduction part is arranged in the central region of the bottom surface of the tray and is used for uniformly transferring the heat radiated by the heater below the tray to the substrate placed on the tray; the upper edge of the sleeve is arranged around the outer periphery of the uniform heat conduction part and is located between the first limiting part and the uniform heat conduction part.

3. A substrate support apparatus as set forth in claim 2, further comprising: The uniform heat conduction part is disc-shaped, and the inner diameter of the sleeve is greater than the outer diameter of the uniform heat conduction part.

4. The substrate support apparatus of claim 1, wherein, The first limiting part comprises a plurality of bosses arranged on the bottom surface of the tray; the plurality of bosses are distributed along the circumferential direction of the tray and correspond to different positions of the outer edge of the tray, respectively; the second limiting part comprises a plurality of limiting grooves corresponding to the plurality of bosses, respectively; and the bosses are embedded in the corresponding limiting grooves.

5. A substrate support apparatus as set forth in claim 4, wherein, The second limiting part comprises a plurality of pairs of limiting blocks arranged on the side wall of the sleeve; the pairs of limiting blocks form the limiting grooves therebetween.

6. The substrate support apparatus of claim 4, wherein, The second limiting part comprises a limiting ring arranged around the side wall of the sleeve; the plurality of limiting grooves are distributed along the circumferential direction of the limiting ring on the top surface of the limiting ring.

7. The substrate support apparatus of claim 4, wherein, At least one of the bosses and the corresponding limiting grooves is inclined; the inclined boss gradually contracts inward from the top to the bottom of the boss; and the inclined limiting groove has a structure of being wide at the top and narrow at the bottom.

8. The substrate support apparatus of claim 1, wherein, The first limiting part comprises a plurality of limiting grooves; the plurality of limiting grooves are distributed along the circumferential direction of the tray and correspond to different positions of the outer edge of the tray, respectively; and the second limiting part comprises a plurality of bosses arranged on the side wall of the sleeve; the plurality of bosses are embedded in the plurality of limiting grooves, respectively.

9. A substrate support apparatus as set forth in claim 8, wherein, The first limiting part comprises a plurality of pairs of limiting blocks arranged on the bottom surface of the tray; the pairs of limiting blocks form the limiting grooves therebetween.

10. The substrate support apparatus of claim 8, wherein, The first limiting part comprises a limiting ring arranged on the bottom surface of the tray; the plurality of limiting grooves are distributed along the circumferential direction of the limiting ring on the bottom surface of the limiting ring.

11. The substrate support apparatus of claim 8, wherein, At least one of the bosses and the corresponding limiting grooves is inclined; the inclined boss gradually contracts inward from the bottom to the top of the boss; and the inclined limiting groove has a structure of being narrow at the top and wide at the bottom.

12. A substrate support apparatus as set forth in any one of claims 4-11, wherein, The bosses and the corresponding limiting grooves are in linear or surface contact.

13. A substrate support apparatus as set forth in any of claims 7 or 11, further comprising: The angle of inclination is 20° to 70°.

14. A substrate support apparatus as set forth in any one of claims 4-7, wherein, The second limiting part is arranged on the top of the outer side wall of the sleeve; the bosses are at least three; and the plurality of bosses are uniformly distributed.

15. A substrate support apparatus as set forth in any one of claims 8-11, wherein, The second limiting part is arranged on the top of the outer side wall of the sleeve; the limiting grooves are at least three; and the plurality of limiting grooves are uniformly distributed.

16. The substrate support apparatus of claim 1, wherein, The top surface of the sleeve is in sealing contact with the bottom surface of the tray.

17. The substrate support apparatus of claim 1, wherein, A driving device is further arranged for driving the sleeve to rotate around the central axis thereof.

18. The substrate support apparatus of claim 1, wherein, A recessed part for accommodating a substrate is arranged in the central region of the top surface of the tray; a plurality of protrusions extending inward are arranged on the inner wall of the recessed part along the circumferential direction of the recessed part; and the substrate is supported by the top surface of the protrusions.

19. The substrate support apparatus of claim 1, wherein, The material of the tray and the bushing is any one of graphite, quartz, graphite coated with SiC, graphite coated with TaC, graphite coated with WC, graphite coated with NbC, graphite coated with MoC, pure BC, BN, SiC, TaC, AlC, AlN, NbC, NbN, and Al2O3.

20. A substrate processing apparatus, characterized by, The substrate processing apparatus comprises a reaction chamber comprising a substrate support device as claimed in any one of claims 1 to 19.

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