High-resistance film, method for manufacturing the same, and touch display panel

Abstract

The application relates to a high-resistance film, a preparation method thereof and a touch display panel. The preparation method of the high-resistance film comprises the following steps: under vacuum conditions, providing a working gas to the surface of a substrate and applying a magnetic field; applying an electric field to ionize the working gas, using the obtained ions to bombard an FTO target material, depositing particles sputtered from the FTO target material on the surface of the substrate, and preparing the high-resistance film; wherein the working gas comprises oxygen and inert gas with a flow ratio of (0-2):(10-20), the power of the electric field is 2kW-4kW, and the molar ratio of tin and fluorine in the FTO target material is 10:(1-8). The preparation method cooperates the three process parameters of the oxygen content in the working gas, the power of the electric field and the molar ratio of tin and fluorine in the FTO target material, adopts a magnetron sputtering process to deposit a high-resistance film on the substrate, and the high-resistance film has good sheet resistance stability and high light transmittance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of touch display panels, and in particular to a high-resistance film, a preparation method thereof and a touch display panel. BACKGROUND

[0002] In the field of liquid crystal display technology, an integrated process of a touch panel and a display panel is usually adopted to realize thinness and lightness of a liquid crystal display screen. In-Cell is a method of embedding a touch panel function into a liquid crystal pixel, which directly forms a high-resistance film on a TFT (Thin Film Transistor) glass, can reduce the thickness and weight of a display panel, realize thinness and lightness of the display panel, and can reduce the bonding process and reduce the manufacturing cost.

[0003] The high-resistance film on the surface of the In-Cell is a functional film with high light transmittance, good anti-static effect and effective anti-touch signal interference. Traditional high-resistance film materials include ITO (In2O3: Sn), AZO (ZnO: Al), ZnO, NbO and Ti2O3, etc. However, the sheet resistance of these materials is very unstable, and the sheet resistance after just plating is 10 8 Ω / □~10 9 Ω / □, but after several hours to several days of placement, the sheet resistance will rapidly rise to 10 11 Ω / □ or more, which cannot realize the function of static electricity release. SUMMARY

[0004] Therefore, it is necessary to provide a high-resistance film with good sheet resistance stability and high light transmittance, a preparation method thereof and a touch display panel.

[0005] The above object of the present application is achieved by the following technical solutions:

[0006] The present application provides a preparation method of a high-resistance film, comprising the following steps:

[0007] Under vacuum conditions, a working gas is provided to the surface of a substrate, and a magnetic field is applied;

[0008] An electric field is applied to ionize the working gas, and the obtained ions are used to bombard an FTO target material, so that the particles sputtered from the FTO target material are deposited on the surface of the substrate to obtain the high-resistance film;

[0009] The working gas comprises oxygen and inert gas with a flow ratio of (0-2):(10-20), the power of the electric field is 2kW-4kW, and the molar ratio of tin and fluorine in the FTO target material is 10:(1-8).

[0010] In one of the embodiments, the deposition time is 30s-120s.

[0011] In one embodiment, the working gas satisfies one or more of the following conditions:

[0012] 1) the working gas has a pressure of 0.1 Pa to 2 Pa;

[0013] 2) the working gas includes oxygen at a flow rate of ≤ 20 sccm;

[0014] 3) the working gas includes argon at a flow rate of 100 sccm to 200 sccm.

[0015] In one embodiment, the power supply of the electric field is one or more of a radio frequency power supply, a medium frequency power supply, and a pulsed direct current power supply.

[0016] In one embodiment, the power supply of the electric field satisfies one or more of the following conditions:

[0017] 1) the radio frequency power supply has a frequency of 10 MHz to 15 MHz and a voltage of 300 V to 400 V;

[0018] 2) the medium frequency power supply has a frequency of 30 kHz to 50 kHz and a voltage of 500 V to 600 V;

[0019] 3) the pulsed direct current power supply has a frequency of 50 Hz to 40 kHz, a voltage of 300 V to 400 V, a current of 5 A to 15 A, and a duty cycle of 1% to 95%.

[0020] In one embodiment, the magnetic field strength at the surface of the FTO target is 10 T to 50 T.

[0021] In one embodiment, the substrate is a glass substrate and / or a polymer substrate.

[0022] In one embodiment, the vacuum degree of the vacuum condition is ≤ 10 -3 Pa.

[0023] In one embodiment, the high-resistance film satisfies one or more of the following conditions:

[0024] 1) a thickness of 5 nm to 20 nm;

[0025] 2) a sheet resistance of 1 x 10 7 Ω / □ to 1 x 10 10 Ω / □;

[0026] 3) a light transmittance at 550 nm of 95% to 99%.

[0027] The second aspect of the present application provides a high-resistance film prepared by the method for preparing a high-resistance film.

[0028] The third aspect of the present application provides a touch display panel comprising the high-resistance film.

[0029] The present application can obtain a high-resistance film with good sheet resistance stability and high light transmittance by synergistic cooperation between the oxygen content in the working gas, the power of the electric field and the tin-fluorine molar ratio in the FTO target material through a magnetron sputtering process. By controlling the tin-fluorine molar ratio in the FTO target material, the FTO thin film can obtain a suitable amount of fluorine doping and is not prone to oxidation in air for a long time, and has high sheet resistance stability, good acid and alkali resistance and high temperature resistance. By controlling the oxygen content in the working gas, the oxygen vacancies in the FTO thin film can be compensated, and the concentration of n-type carriers can be reduced, so that the FTO thin film shows high resistance characteristics. Further, when the electric field power is high, the FTO thin film not only obtains high resistance characteristics with the cooperation of suitable oxygen content, but also has better sheet resistance stability than the FTO thin film prepared under low electric field power, and a large number of particles and kinetic energy can be sputtered from the FTO target material, which is conducive to improving the crystallinity, surface morphology and internal defect density of the FTO thin film, thereby obtaining a high-resistance film with excellent antistatic effect and good touch performance. DETAILED DESCRIPTION

[0030] In order to make the above objectives, features and advantages of the present application more apparent and easy to understand, the specific embodiments of the present application are described in detail below. In the following description, a large number of specific details are set forth in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the scope of the present application, so the present application is not limited to the specific embodiments disclosed below.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0032] Terms and definitions:

[0033] FTO: fluorine-doped tin oxide (SnO2:F).

[0034] Sheet resistance: also known as sheet resistance (Sheet Resistance) or sheet resistance, refers to the resistance value of the unit thickness and unit area of the conductive material, the unit is ohm per square (Ω / □); the greater the sheet resistance of the thin film, the worse the conductive performance.

[0035] In a first aspect of the present application, a preparation method of a high resistance film is provided, comprising the following steps:

[0036] Under vacuum conditions, a working gas is provided to the surface of the substrate, and a magnetic field is applied;

[0037] An electric field is applied to ionize the working gas, and the particles sputtered from the FTO target material are deposited on the surface of the substrate by ion bombardment, so as to obtain the high resistance film;

[0038] The working gas comprises oxygen and inert gas with a flow ratio of (0-2):(10-20), the power of the electric field is 2kW-4kW, and the molar ratio of tin and fluorine in the FTO target material is 10:(1-8).

[0039] It can be understood that the method for forming a high resistance film on the surface of the substrate is a magnetron sputtering method.

[0040] The present application uses the synergistic cooperation between the oxygen content in the working gas, the power of the electric field and the tin-fluorine molar ratio in the FTO target material to deposit a high resistance film with good sheet resistance stability and high light transmittance on the substrate by magnetron sputtering process. By controlling the tin-fluorine molar ratio of the FTO target material, the FTO thin film can obtain a suitable amount of fluorine doping, and is not easy to oxidize in air for a long time, has high sheet resistance stability, and has good acid and alkali resistance and high temperature resistance; by controlling the oxygen content in the working gas, the oxygen vacancies in the FTO thin film can be compensated, the concentration of n-type carriers can be reduced, and the FTO thin film can show high resistance characteristics; further, when the electric field power is high, not only can the FTO thin film obtain high resistance characteristics under the cooperation of suitable oxygen content, but also has better sheet resistance stability than the FTO thin film prepared under low electric field power, and a large number of particles and kinetic energy can be sputtered from the FTO target material, which is beneficial to improve the crystallinity, surface morphology and internal defect density of the FTO thin film, thereby obtaining a high resistance film with excellent antistatic effect and good touch performance.

[0041] In some more preferred embodiments, the power of the electric field is 2.5kW.

[0042] In some more preferred embodiments, the molar ratio of tin and fluorine in the FTO target material is 8:2.

[0043] In some embodiments, the deposition time is 30s-120s.

[0044] By combining a short deposition time and a high electric field power, a smooth and dense high resistance film can be quickly deposited; by using different deposition times, high resistance films of different thicknesses can be prepared, thereby meeting the requirements for different sheet resistances and different light transmittances.

[0045] In some more preferred embodiments, the deposition time is 45s.

[0046] In some embodiments, the working gas meets one or more of the following conditions:

[0047] 1) The gas pressure of the working gas is 0.1Pa-2Pa;

[0048] 2) The working gas comprises oxygen with a flow rate of ≤20sccm;

[0049] 3) The working gas comprises argon with a flow rate of 100sccm-200sccm.

[0050] By adjusting the gas pressure of the sputtering process, the deposition rate of the FTO film can be controlled, and at the same time, the crystallinity, surface morphology quality and internal defect density of the FTO film can be improved, thereby obtaining a high resistance film with high sheet resistance stability and high light transmittance.

[0051] In some more preferred embodiments, the gas pressure of the working gas is 0.4Pa.

[0052] In some more preferred embodiments, the working gas comprises argon with a flow rate of 100sccm and oxygen with a flow rate of 10sccm.

[0053] In some embodiments, the power source of the electric field is one or more of a radio frequency power source, a medium frequency power source and a pulsed direct current power source.

[0054] The radio frequency power source can increase the energy and ionization rate of the plasma in the sputtering process, has a high sputtering rate, good process repeatability, and a high density of the deposited high resistance film, which is firmly attached to the substrate; using a medium frequency power source for sputtering can also obtain a smooth and dense high resistance film with high film hardness, and can improve the utilization rate and service life of the target material; using a pulsed direct current power source to apply an electric field can ensure normal glow discharge of the working gas, while also ensuring good film uniformity of the high resistance film.

[0055] In some embodiments, the power source of the electric field meets one or more of the following conditions:

[0056] 1) The frequency of the radio frequency power source is 10MHz-15MHz, and the voltage is 300V-400V;

[0057] 2) the frequency of the intermediate frequency power supply is 30 kHz to 50 kHz, and the voltage is 500 V to 600 V;

[0058] 3) the frequency of the pulse direct current power supply is 50 Hz to 40 kHz, the voltage is 300 V to 400 V, the current is 5 A to 15 A, and the duty cycle is 1% to 95%.

[0059] In some embodiments, the magnetic field strength at the surface of the FTO target is 10 T to 50 T.

[0060] In some more preferred embodiments, the magnetic field strength at the surface of the FTO target is 25 T.

[0061] In some embodiments, the substrate is a glass substrate and / or a polymer substrate.

[0062] In some embodiments, the glass substrate is selected from one or more of a quartz glass substrate, a soda glass substrate, a potash glass substrate, an alumina-magnesia glass substrate, a lead glass substrate, and a borosilicate glass substrate.

[0063] In some embodiments, the polymer substrate is one or more of a polyimide (PI) substrate, a polyethylene terephthalate (PET) substrate, a polycarbonate (PC) substrate, and a polymethyl methacrylate (PMMA) substrate.

[0064] In some embodiments, the vacuum degree of the vacuum condition is ≤ 10 -3 Pa.

[0065] In some more preferred embodiments, the vacuum degree of the vacuum condition is 10 -4 Pa.

[0066] In some embodiments, the high-resistance film satisfies one or more of the following conditions:

[0067] 1) the thickness is 5 nm to 20 nm;

[0068] 2) the sheet resistance is 1 x 10 7 Ω / □ to 1 x 10 10 Ω / □;

[0069] 3) the light transmittance at 550 nm is 95% to 99%.

[0070] The sheet resistance is controlled to be 1 x 10 7 Ω / □ to 1 x 10 10Ω / □, the function of electrostatic discharge can be realized, the influence of external electric field on the touch display panel is prevented, meanwhile, the shielding effect on external touch signal is weak, and the touch performance of the touch display panel is not affected; in addition, the high resistance film layer prepared by the method has very small thickness, and has good light transmittance in the visible light region, so that the light and thin requirement of the touch display panel can be further met.

[0071] In some more preferable embodiments, the sheet resistance of the high resistance film is 1x10 8 Ω / □~1x10 9 Ω / □.

[0072] In the second aspect of the application, a high resistance film is provided, which is prepared by the method for preparing a high resistance film.

[0073] In the third aspect of the application, a touch display panel is provided, which comprises the high resistance film.

[0074] The application will be further described in detail below with reference to specific embodiments.

[0075] Example 1

[0076] (1) The FTO target material is fixed on the cathode target position in the reaction cavity, and the cleaned and dried glass substrate is arranged on the workpiece holder, and then the workpiece holder is pushed into the reaction cavity, and the whole cavity is closed; wherein the distance between the FTO target material and the glass substrate (i.e. the target-substrate distance) is 100 mm, the molar ratio of tin element and fluorine element of the FTO target material is 8:2, and the glass substrate is ordinary soda-lime glass of China South Glass Group;

[0077] (2) The reaction cavity is evacuated until the cavity pressure is 10 -4 Pa, then argon gas is introduced into the reaction cavity at a flow rate of 150 sccm, and oxygen gas is introduced into the reaction cavity at a flow rate of 10 sccm, so that the cavity pressure of the reaction cavity is maintained at 0.4 Pa;

[0078] (3) A magnetic field is applied in the reaction cavity by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material is 25 T; the radio frequency power supply is turned on to apply an electric field, so that the argon and oxygen in the reaction cavity are ionized to obtain plasma, and the plasma is used to bombard the FTO target material to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power supply is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0079] (4) The radio frequency power supply is turned off, and the introduction of argon and oxygen into the reaction cavity is stopped; the reaction cavity is evacuated for degassing treatment, and then the high resistance film is taken out, cleaned with anhydrous ethanol, and then performance test is carried out.

[0080] The thickness of the high resistance film was tested by a step profiler of KLATencor P-16 model, and the results are shown in Table 1. The light transmittance of the high resistance film at 550 nm was tested by a spectrophotometer of Shimadzu UV2650 model, and the results are shown in Table 1. The sheet resistance of the high resistance film immediately after deposition was tested by a high resistance analyzer of Mitsubishi MCP-HT800 model, and the results are shown in Table 1.

[0081] The sheet resistance stability of the high resistance film was tested by the following method: the high resistance film was respectively placed at room temperature for 5 days, placed at room temperature for 15 days, boiled in water at 100℃ for 5 days, baked at 150℃ for 5 days, soaked in 10% NaOH solution for 5 days, and soaked in aqua regia for 5 days, then the sheet resistance of the high resistance film after the experiment was tested by a high resistance analyzer of Mitsubishi MCP-HT800 model, and the sheet resistance change rate after the experiment was calculated, and the results are shown in Table 2. It can be understood that the room temperature is the normal temperature or the general temperature, which ranges from 20℃ to 30℃.

[0082] The high resistance film and the protective glass were connected by electrodes to make a touch display panel, and the display effect of the touch display panel under the electrostatic voltage of 8kV-12kV was tested by an electrostatic tester, and the results are shown in Table 3. Among them, "√" represents that the touch display panel discolors under the electrostatic voltage, and the electrostatic discharge performance is poor; "X" represents that the touch display panel will not discolor under the electrostatic voltage, and the electrostatic discharge performance is good.

[0083] Example 2

[0084] The preparation method of this embodiment is basically the same as that of Example 1, except that the molar ratio of tin element and fluorine element is 6:4, and the specific steps are as follows:

[0085] (1) The FTO target material was fixed on the cathode target position in the reaction chamber, and the washed and dried glass substrate was arranged on the workpiece holder, and then the workpiece holder was pushed into the reaction chamber, and the whole chamber was closed; wherein the target base distance is 100mm, the molar ratio of tin element and fluorine element of the FTO target material is 6:4, and the glass substrate is ordinary soda-lime glass;

[0086] (2) The reaction chamber was evacuated until the chamber pressure was 10 -4 Pa, then argon was introduced into the reaction chamber at a flow rate of 150sccm, and oxygen was introduced into the reaction chamber at a flow rate of 10sccm, so that the chamber pressure of the reaction chamber was kept at 0.4Pa;

[0087] (3) the permanent magnet is used to apply a magnetic field in the reaction cavity, so that the magnetic field strength on the surface of the FTO target material is 25 T; the radio frequency power supply is turned on to apply an electric field, so that the argon and oxygen in the reaction cavity are ionized to obtain plasma, and the plasma is used to bombard the FTO target material, so that a high resistance film is deposited on the glass substrate; wherein the power of the radio frequency power supply is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0088] (4) the radio frequency power supply is turned off, the argon and oxygen are stopped from being introduced into the reaction cavity; the reaction cavity is vacuumized for degassing treatment, then the high resistance film is taken out, the high resistance film is cleaned by using anhydrous ethanol, and then the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method in Example 1, and the results are shown in Tables 1-3.

[0089] Example 3

[0090] The preparation method of this example is basically the same as that of Example 1, except that the molar ratio of tin element and fluorine element is 9:1, and the specific steps are as follows:

[0091] (1) the FTO target material is fixed on the cathode target position in the reaction cavity, and the cleaned and dried glass substrate is arranged on the workpiece rack, then the workpiece rack is pushed into the reaction cavity, and the whole cavity is closed; wherein the target base distance is 100 mm, the molar ratio of tin element and fluorine element of the FTO target material is 9:1, and the glass substrate is ordinary soda-lime glass;

[0092] (2) the reaction cavity is vacuumized until the cavity pressure is 10 -4 Pa, then the argon is introduced into the reaction cavity at a flow rate of 150 sccm, the oxygen is introduced into the reaction cavity at a flow rate of 10 sccm, and the cavity pressure of the reaction cavity is kept at 0.4 Pa;

[0093] (3) the permanent magnet is used to apply a magnetic field in the reaction cavity, so that the magnetic field strength on the surface of the FTO target material is 25 T; the radio frequency power supply is turned on to apply an electric field, so that the argon and oxygen in the reaction cavity are ionized to obtain plasma, and the plasma is used to bombard the FTO target material, so that a high resistance film is deposited on the glass substrate; wherein the power of the radio frequency power supply is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0094] (4) the radio frequency power supply is turned off, the argon and oxygen are stopped from being introduced into the reaction cavity; the reaction cavity is vacuumized for degassing treatment, then the high resistance film is taken out, the high resistance film is cleaned by using anhydrous ethanol, and then the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method in Example 1, and the results are shown in Tables 1-3.

[0095] Example 4

[0096] The preparation method of this example is basically the same as that of Example 1, except that no oxygen is introduced during the magnetron sputtering process. The specific steps are as follows:

[0097] (1) The FTO target material was fixed on the cathode target position in the reaction chamber, and the washed and dried glass substrate was placed on the workpiece holder, and then the workpiece holder was pushed into the reaction chamber, and the whole chamber was closed; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element in the FTO target material was 8:2, and the glass substrate was ordinary soda-lime glass;

[0098] (2) The reaction chamber was evacuated until the chamber pressure was 10 -4 Pa, and then argon was introduced into the reaction chamber at a flow rate of 150 sccm, so that the chamber pressure of the reaction chamber was maintained at 0.4 Pa;

[0099] (3) A magnetic field was applied in the reaction chamber by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material was 25 T; the radio frequency power source was turned on to apply an electric field, so that the argon gas in the reaction chamber was ionized to obtain argon plasma, and the FTO target material was bombarded by the argon plasma to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power source was 2.5 kW, the frequency was 13.5 MHz, the voltage was 320 V, and the deposition time was 45 s;

[0100] (4) The radio frequency power source was turned off, and the introduction of argon into the reaction chamber was stopped; the reaction chamber was evacuated for degassing treatment, and then the high resistance film was taken out, washed with anhydrous ethanol, and then the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film were tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0101] Example 5

[0102] The preparation method of this example is basically the same as that of Example 1, except that oxygen is introduced at a flow rate of 3 sccm during the magnetron sputtering process. The specific steps are as follows:

[0103] (1) The FTO target material was fixed on the cathode target position in the reaction chamber, and the washed and dried glass substrate was placed on the workpiece holder, and then the workpiece holder was pushed into the reaction chamber, and the whole chamber was closed; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element in the FTO target material was 8:2, and the glass substrate was ordinary soda-lime glass;

[0104] (2) The reaction chamber was evacuated until the chamber pressure was 10 -4 Pa, and then argon was introduced into the reaction chamber at a flow rate of 150 sccm, and oxygen was introduced into the reaction chamber at a flow rate of 3 sccm, so that the chamber pressure of the reaction chamber was maintained at 0.4 Pa;

[0105] (3) The permanent magnet is used to apply a magnetic field in the reaction chamber, so that the magnetic field strength on the surface of the FTO target is 25 T; the radio frequency power supply is turned on to apply an electric field, so that the argon and oxygen in the reaction chamber are ionized to obtain plasma, and the plasma is used to bombard the FTO target to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power supply is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0106] (4) The radio frequency power supply is turned off, and the flow of argon and oxygen into the reaction chamber is stopped; the reaction chamber is vacuumized for degassing treatment, and then the high resistance film is taken out; after the high resistance film is cleaned with anhydrous ethanol, the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0107] Example 6

[0108] The preparation method of this example is basically the same as that of Example 1, except that the flow of oxygen is 15 sccm during the magnetron sputtering process. The specific steps are as follows:

[0109] (1) The FTO target is fixed on the cathode target position in the reaction chamber, and the cleaned and dried glass substrate is placed on the workpiece holder, and then the workpiece holder is pushed into the reaction chamber, and the whole chamber is closed; wherein the target-substrate distance is 100 mm, the molar ratio of tin element and fluorine element of the FTO target is 8:2, and the glass substrate is ordinary soda-lime glass;

[0110] (2) The reaction chamber is vacuumized until the chamber pressure is 10 -4 Pa, and then argon is introduced into the reaction chamber at a flow rate of 150 sccm, and oxygen is introduced into the reaction chamber at a flow rate of 15 sccm, so that the chamber pressure of the reaction chamber is maintained at 0.4 Pa;

[0111] (3) The permanent magnet is used to apply a magnetic field in the reaction chamber, so that the magnetic field strength on the surface of the FTO target is 25 T; the radio frequency power supply is turned on to apply an electric field, so that the argon and oxygen in the reaction chamber are ionized to obtain plasma, and the plasma is used to bombard the FTO target to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power supply is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0112] (4) The radio frequency power supply is turned off, and the flow of argon and oxygen into the reaction chamber is stopped; the reaction chamber is vacuumized for degassing treatment, and then the high resistance film is taken out; after the high resistance film is cleaned with anhydrous ethanol, the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0113] Example 7

[0114] The preparation method of this example is basically the same as that of Example 1, except that 20 seem of oxygen is introduced during the magnetron sputtering process, and the specific steps are as follows:

[0115] (1) The FTO target material is fixed on the cathode target position in the reaction chamber, and the washed and dried glass substrate is placed on the workpiece holder, and then the workpiece holder is pushed into the reaction chamber, and the whole chamber is closed; wherein the target base distance is 100 mm, the molar ratio of tin element and fluorine element of the FTO target material is 8:2, and the glass substrate is ordinary soda-lime glass;

[0116] (2) The reaction chamber is evacuated until the chamber pressure is 10 -4 Pa, and then 150 seem of argon is introduced into the reaction chamber, and 20 seem of oxygen is introduced into the reaction chamber, so that the chamber pressure of the reaction chamber is kept at 0.4 Pa;

[0117] (3) A magnetic field is applied in the reaction chamber by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material is 25 T; the radio frequency power source is turned on to apply an electric field, so that the argon and oxygen in the reaction chamber are ionized to obtain plasma, and the plasma is used to bombard the FTO target material to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power source is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0118] (4) The radio frequency power source is turned off, and the introduction of argon and oxygen into the reaction chamber is stopped; the reaction chamber is evacuated for degassing treatment, and then the high resistance film is taken out, washed with anhydrous ethanol, and then the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0119] Example 8

[0120] The preparation method of this example is basically the same as that of Example 1, except that the deposition time is 35 s, and the specific steps are as follows:

[0121] (1) The FTO target material is fixed on the cathode target position in the reaction chamber, and the washed and dried glass substrate is placed on the workpiece holder, and then the workpiece holder is pushed into the reaction chamber, and the whole chamber is closed; wherein the target base distance is 100 mm, the molar ratio of tin element and fluorine element of the FTO target material is 8:2, and the glass substrate is ordinary soda-lime glass;

[0122] (2) The reaction chamber is evacuated until the chamber pressure is 10 -4Pa, then argon gas is introduced into the reaction cavity at a flow rate of 150 seem, and oxygen gas is introduced into the reaction cavity at a flow rate of 10 seem, so that the cavity pressure of the reaction cavity is kept at 0.4 Pa;

[0123] (3) A magnetic field is applied in the reaction cavity by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material is 25 T; a radio frequency power source is turned on to apply an electric field, so that argon gas and oxygen gas in the reaction cavity are ionized to obtain plasma, and the FTO target material is bombarded by using the plasma to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power source is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 35 s;

[0124] (4) The radio frequency power source is turned off, and the introduction of argon gas and oxygen gas into the reaction cavity is stopped; the reaction cavity is vacuumed for degassing treatment, then the high resistance film is taken out, and the high resistance film is cleaned by using anhydrous ethanol, and then the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0125] Example 9

[0126] The preparation method of this example is basically the same as that of Example 1, except that a high resistance film is deposited on a polymer substrate, and the specific steps are as follows:

[0127] (1) The FTO target material is fixed on the cathode target position in the reaction cavity, and the cleaned and dried polymer substrate is arranged on the workpiece holder, then the workpiece holder is pushed into the reaction cavity, and the whole cavity is closed; wherein the target-substrate distance is 100 mm, the molar ratio of tin element and fluorine element of the FTO target material is 8:2, and the polymer substrate is a polyimide film;

[0128] (2) The reaction cavity is vacuumed until the cavity pressure is 10 -4 Pa, then argon gas is introduced into the reaction cavity at a flow rate of 150 seem, and oxygen gas is introduced into the reaction cavity at a flow rate of 10 seem, so that the cavity pressure of the reaction cavity is kept at 0.4 Pa;

[0129] (3) A magnetic field is applied in the reaction cavity by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material is 25 T; a radio frequency power source is turned on to apply an electric field, so that argon gas and oxygen gas in the reaction cavity are ionized to obtain plasma, and the FTO target material is bombarded by using the plasma to deposit a high resistance film on the polymer substrate; wherein the power of the radio frequency power source is 2.5 kW, the frequency is 13.5 MHz, the voltage is 320 V, and the deposition time is 45 s;

[0130] (4) Turn off the radio frequency power source, stop the argon and oxygen gas flowing into the reaction chamber, and vacuumize the reaction chamber for degassing treatment. Then, the high resistance film is taken out, cleaned with anhydrous ethanol, and the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0131] Example 10

[0132] The preparation method of this example is basically the same as that of Example 1, except that a medium frequency power source is used in the magnetron sputtering process. The specific steps are as follows:

[0133] (1) The FTO target material is fixed on the cathode target position in the reaction chamber, and the cleaned and dried glass substrate is placed on the workpiece holder, and then the workpiece holder is pushed into the reaction chamber, and the whole chamber is closed. The target base distance is 100 mm, the molar ratio of tin element and fluorine element in the FTO target material is 8:2, and the glass substrate is ordinary soda-lime glass;

[0134] (2) The reaction chamber is vacuumized until the chamber pressure is 10 -4 Pa, then argon gas is introduced into the reaction chamber at a flow rate of 150 sccm, and oxygen gas is introduced into the reaction chamber at a flow rate of 10 sccm, so that the chamber pressure of the reaction chamber is maintained at 0.4 Pa;

[0135] (3) A magnetic field with a strength of 25 T is applied to the surface of the FTO target material in the reaction chamber by using a permanent magnet, and an electric field is applied by turning on the medium frequency power source, so that the argon and oxygen gases in the reaction chamber are ionized to obtain plasma, and the plasma is used to bombard the FTO target material to deposit a high resistance film on the glass substrate. The power of the medium frequency power source is 2.5 kW, the frequency is 40 kHz, the voltage is 520 V, and the deposition time is 40 s;

[0136] (4) Turn off the medium frequency power source, stop the argon gas flowing into the reaction chamber, and vacuumize the reaction chamber for degassing treatment. Then, the high resistance film is taken out, cleaned with anhydrous ethanol, and the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film are tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0137] Example 11

[0138] The preparation method of this example is basically the same as that of Example 1, except that a pulse direct current power source is used in the magnetron sputtering process. The specific steps are as follows:

[0139] (1) fixed the FTO target material on the cathode target position in the reaction cavity, and set the washed and dried glass substrate on the workpiece holder, then pushed the workpiece holder into the reaction cavity, and closed the whole cavity; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element in the FTO target material was 8:2, and the glass substrate was ordinary soda-lime glass;

[0140] (2) vacuumed the reaction cavity until the cavity pressure was 10 -4 Pa, then introduced argon into the reaction cavity at a flow rate of 150 sccm, introduced oxygen into the reaction cavity at a flow rate of 10 sccm, and kept the cavity pressure of the reaction cavity at 0.4 Pa;

[0141] (3) applied a magnetic field in the reaction cavity by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material was 25 T; turned on the pulse direct current power supply to apply an electric field, so that the argon and oxygen in the reaction cavity were ionized to obtain plasma, and the plasma was used to bombard the FTO target material to deposit a high resistance film on the glass substrate; wherein the power of the pulse direct current power supply was 2.5 kW, the frequency was 10 kHz, the voltage was 350 V, the current was 7 A, and the deposition time was 40 s;

[0142] (4) turned off the pulse direct current power supply, stopped introducing argon into the reaction cavity; vacuumed the reaction cavity for degassing treatment, then took out the high resistance film, cleaned the high resistance film with anhydrous ethanol, and tested the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film by referring to the method described in Example 1, and the results are shown in Tables 1-3.

[0143] Comparative Example 1

[0144] The comparative example was a blank control group, that is, without magnetron sputtering, the light transmittance, sheet resistance, sheet resistance stability, and electrostatic discharge performance of the glass substrate were tested by referring to the method described in Example 1, and the results are shown in Tables 1-3.

[0145] Comparative Example 2

[0146] The preparation method of the comparative example was basically the same as that of Example 1, except that oxygen was introduced at a flow rate of 30 sccm during magnetron sputtering, and the specific steps were as follows:

[0147] (1) fixed the FTO target material on the cathode target position in the reaction cavity, and set the washed and dried glass substrate on the workpiece holder, then pushed the workpiece holder into the reaction cavity, and closed the whole cavity; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element in the FTO target material was 8:2, and the glass substrate was ordinary soda-lime glass;

[0148] (2) vacuumed the reaction cavity until the cavity pressure was 10 -4Pa, and then argon gas was introduced into the reaction cavity at a flow rate of 150 seem, and oxygen gas was introduced into the reaction cavity at a flow rate of 30 seem, so as to keep the cavity pressure of the reaction cavity at 0.4 Pa;

[0149] (3) A magnetic field was applied in the reaction cavity by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material was 25 T; a radio frequency power source was turned on to apply an electric field, so that argon gas and oxygen gas in the reaction cavity were ionized to obtain plasma, and the FTO target material was bombarded by using the plasma, so as to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power source was 2.5 kW, the frequency was 13.5 MHz, the voltage was 320 V, and the deposition time was 45 s;

[0150] (4) The radio frequency power source was turned off, and the introduction of argon gas and oxygen gas into the reaction cavity was stopped; the reaction cavity was vacuumized for degassing treatment, and then the high resistance film was taken out; after the high resistance film was cleaned by using anhydrous ethanol, the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film were tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0151] Comparative Example 3

[0152] The preparation method of the present comparative example was basically the same as that of Example 1, except that the power of the radio frequency power source was 1.5 kW, and the specific steps were as follows:

[0153] (1) The FTO target material was fixed on the cathode target position in the reaction cavity, and the washed and dried glass substrate was arranged on the workpiece holder, and then the workpiece holder was pushed into the reaction cavity, and the whole cavity was closed; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element of the FTO target material was 8:2, and the glass substrate was ordinary soda-lime glass;

[0154] (2) The reaction cavity was vacuumized until the cavity pressure was 10 -4 Pa, and then argon gas was introduced into the reaction cavity at a flow rate of 150 seem, and oxygen gas was introduced into the reaction cavity at a flow rate of 10 seem, so as to keep the cavity pressure of the reaction cavity at 0.4 Pa;

[0155] (3) A magnetic field was applied in the reaction cavity by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material was 25 T; a radio frequency power source was turned on to apply an electric field, so that argon gas and oxygen gas in the reaction cavity were ionized to obtain plasma, and the FTO target material was bombarded by using the plasma, so as to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power source was 1.5 kW, the frequency was 13.5 MHz, the voltage was 300 V, and the deposition time was 45 s;

[0156] (4) The RF power supply was turned off, and the argon and oxygen gas supply to the reaction chamber was stopped. The reaction chamber was vacuumed and degassed, and then the high resistance film was taken out. After the high resistance film was cleaned with anhydrous ethanol, the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film were tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0157] Comparative Example 4

[0158] The preparation method of this comparative example was basically the same as that of Example 1, except that the power of the RF power supply was 5 kW. The specific steps were as follows:

[0159] (1) The FTO target material was fixed on the cathode target position in the reaction chamber, and the cleaned and dried glass substrate was placed on the workpiece holder, and then the workpiece holder was pushed into the reaction chamber, and the entire chamber was closed. The target-substrate distance was 100 mm, the molar ratio of tin element to fluorine element in the FTO target material was 8:2, and the glass substrate was ordinary soda-lime glass.

[0160] (2) The reaction chamber was vacuumed until the chamber pressure was 10 -4 Pa, and then argon gas was supplied to the reaction chamber at a flow rate of 150 sccm, and oxygen gas was supplied to the reaction chamber at a flow rate of 10 sccm, so that the chamber pressure of the reaction chamber was maintained at 0.4 Pa;

[0161] (3) A magnetic field was applied in the reaction chamber by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material was 25 T. The RF power supply was turned on to apply an electric field, so that the argon and oxygen gases in the reaction chamber were ionized to obtain plasma, and the plasma was used to bombard the FTO target material to deposit a high resistance film on the glass substrate. The power of the RF power supply was 5 kW, the frequency was 13.5 MHz, the voltage was 380 V, and the deposition time was 45 s.

[0162] (4) The RF power supply was turned off, and the argon and oxygen gas supply to the reaction chamber was stopped. The reaction chamber was vacuumed and degassed, and then the high resistance film was taken out. After the high resistance film was cleaned with anhydrous ethanol, the thickness, light transmittance, sheet resistance immediately after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film were tested according to the method described in Example 1, and the results are shown in Tables 1-3.

[0163] Comparative Example 5

[0164] The preparation method of this comparative example was basically the same as that of Example 1, except that the molar ratio of tin element to fluorine element was 20:1. The specific steps were as follows:

[0165] (1) fixed the FTO target material on the cathode target position in the reaction chamber, and set the washed and dried glass substrate on the workpiece holder, then pushed the workpiece holder into the reaction chamber, and closed the whole chamber; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element of the FTO target material was 20:1, and the glass substrate was ordinary soda-lime glass;

[0166] (2) vacuumized the reaction chamber until the chamber pressure was 10 -4 Pa, then introduced argon into the reaction chamber at a flow rate of 150 sccm, introduced oxygen into the reaction chamber at a flow rate of 10 sccm, and kept the chamber pressure of the reaction chamber at 0.4 Pa;

[0167] (3) applied a magnetic field in the reaction chamber by using a permanent magnet, so that the magnetic field strength on the surface of the FTO target material was 25 T; turned on the radio frequency power source to apply an electric field, ionized the argon and oxygen in the reaction chamber to obtain plasma, and used the plasma to bombard the FTO target material to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power source was 2.5 kW, the frequency was 13.5 MHz, the voltage was 320 V, and the deposition time was 45 s;

[0168] (4) turned off the radio frequency power source, stopped introducing argon and oxygen into the reaction chamber; vacuumized and degassed the reaction chamber, then took out the high resistance film, cleaned the high resistance film with anhydrous ethanol, and tested the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film by referring to the method described in Example 1, and the results are shown in Tables 1-3.

[0169] Comparative Example 6

[0170] The preparation method of the present comparative example was basically the same as that of Example 1, except that the molar ratio of tin element and fluorine element was 2:8, and the specific steps were as follows:

[0171] (1) fixed the FTO target material on the cathode target position in the reaction chamber, and set the washed and dried glass substrate on the workpiece holder, then pushed the workpiece holder into the reaction chamber, and closed the whole chamber; wherein the target-substrate distance was 100 mm, the molar ratio of tin element and fluorine element of the FTO target material was 20:1, and the glass substrate was ordinary soda-lime glass;

[0172] (2) vacuumized the reaction chamber until the chamber pressure was 10 -4 Pa, then introduced argon into the reaction chamber at a flow rate of 150 sccm, introduced oxygen into the reaction chamber at a flow rate of 10 sccm, and kept the chamber pressure of the reaction chamber at 0.4 Pa;

[0173] (3) using a permanent magnet to apply a magnetic field in the reaction chamber, so that the magnetic field strength on the surface of the FTO target is 25T; turning on the radio frequency power supply to apply an electric field, so that the argon and oxygen in the reaction chamber are ionized to obtain plasma, and using the plasma to bombard the FTO target to deposit a high resistance film on the glass substrate; wherein the power of the radio frequency power supply is 2.5kW, the frequency is 13.5MHz, the voltage is 320V, and the deposition time is 45s;

[0174] (4) turning off the radio frequency power supply, stopping the introduction of argon and oxygen into the reaction chamber; vacuumizing the reaction chamber for degassing treatment, then taking out the high resistance film, cleaning the high resistance film with anhydrous ethanol, and then testing the thickness, light transmittance, sheet resistance after deposition, sheet resistance stability and electrostatic discharge performance of the high resistance film according to the method described in Example 1, and the results are shown in Tables 1-3.

[0175] As can be seen from Table 1, the thickness of the high resistance film of Examples 1-11 is between 5nm and 8nm, the light transmittance at 550nm is at least 95.8%, the sheet resistance after deposition is at least 1.2x10 7 Ω / □, and the highest is 2x10 9 Ω / □. As can be seen from Table 2, the sheet resistance change rate of the high resistance film of Examples 1-11 is at most 200% after 5d at room temperature, at most 332% after 15d at room temperature, at most 341% after 5d boiling at 100℃, at most 377% after 5d baking at 150℃, at most 299% after 5d soaking in 10% NaOH, and at most 371% after 5d soaking in aqua regia; wherein the formula for calculating the sheet resistance change rate is: (sheet resistance value after experiment-sheet resistance after deposition) / sheet resistance after depositionx100%. This shows that according to the magnetron sputtering process parameters of Examples 1-11, a super-thin, high light transmittance and high sheet resistance high resistance film can be prepared, and the sheet resistance change rate of these high resistance films is very low after long-term storage, high temperature treatment and acid and alkali soaking, and has excellent sheet resistance stability.

[0176] In comparison, the sheet resistance of the high resistance films of Comparative Examples 1-3 is not in the range of 1x10 7 Ω / □-1x10 10 Ω / □; the sheet resistance of Comparative Examples 4-6 is in the range of 1x10 7 Ω / □-1x10 10Ω / □, but the transmittance of the comparative example 4 is poor, only 85%, which does not meet the display requirement of the touch display panel, and the sheet resistance of the high resistance films prepared in the comparative examples 5 and 6 increases obviously after a long time of standing, the minimum sheet resistance change rate is 3400%, and the maximum sheet resistance change rate is 50567%, and the sheet resistance stability is very poor. Therefore, the high resistance films of the comparative examples 1 to 6 cannot have both high resistance characteristics and good conductivity, and are easily interfered by static electricity or shielded from touch signal.

[0177] As shown in Table 3, the touch display panels of the examples 1 to 11 do not discolor under the static voltage of 8kV to 12kV, and have good static electricity release performance and excellent anti-static effect. In comparison, the touch display panel of the comparative example 1 discolors under the static voltage of 10kV, and the touch display panels of the comparative examples 2 to 3 also discolor under the static voltage of 12kV, because the high resistance films of the comparative examples 1 to 3 are not in the range of 1x10 7 Ω / □ to 1x10 10 Ω / □, and therefore have poor anti-static effect. Although the touch display panels of the comparative examples 4 to 6 do not discolor under the static voltage of 8kV to 12kV, because the sheet resistance of the high resistance films of the comparative examples 4 to 6 is also in the range of 1x10 7 Ω / □ to 1x10 10 Ω / □ after deposition. However, the high resistance film of the comparative example 4 has poor transmittance and poor display effect, and the sheet resistance of the high resistance films of the comparative examples 5 to 6 has poor stability, and when the sheet resistance changes, the anti-static performance is easily abnormal, resulting in poor product yield. Therefore, the high resistance films of the examples 1 to 11 not only have appropriate sheet resistance after deposition, but also have good sheet resistance stability and high transmittance, and therefore the touch display panels prepared therefrom also have excellent anti-static effect and display performance.

[0178] Table 1. Thickness, light transmittance and sheet resistance after deposition of the high resistance film

[0179]

[0180]

[0181] Table 2. Sheet resistance stability test results of the high resistance film (unit: Ω / □)

[0182]

[0183] Table 3. Static electricity release performance test results of the high resistance film

[0184] Number 8 kV -8 kV 9 kV -9 kV 10 kV -10 kV 12 kV -12 kV Example 1 × × × × × × × × Example 2 × × × × × × × × Example 3 × × × × × × × × Example 4 × × × × × × × × Example 5 × × × × × × × × Example 6 × × × × × × × × Example 7 × × × × × × × × Example 8 × × × × × × × × Example 9 × × × × × × × × Example 10 × × × × × × × × Example 11 × × × × × × × × Comparative Example 1 × × × × √ √ √ √ Comparative Example 2 × × × × × × √ √ Comparative Example 3 × × × × × × √ √ Comparative Example 4 × × × × × × × × Comparative Example 5 × × × × × × × × Comparative Example 6 × × × × × × × ×

[0185] Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, as long as there is no conflict, any combination of the technical features should be considered within the scope of the present disclosure.

[0186] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that for ordinary skilled persons in the art, some modifications and improvements can be made without departing from the concept of the present application, and these are within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims, and the description can be used to explain the content of the claims.

Claims

1. A method for manufacturing a touch display panel, characterized by, The method comprises the following steps: providing a working gas to the surface of a substrate under vacuum and applying a magnetic field; applying an electric field to ionize the working gas, using the resulting ions to bombard an FTO target, and depositing particles sputtered from the FTO target on the surface of the substrate to form a high-resistance film; connecting the high-resistance film to a protective glass through an electrode to form the touch display panel; wherein the working gas comprises oxygen and an inert gas at a flow ratio of (0-2):(10-20), the working gas comprises oxygen at a flow rate of ≤15 sccm, the flow rate of the oxygen is not 0, the power of the electric field is 2 kW-4 kW, and the molar ratio of tin to fluorine in the FTO target is 10:(1-8); the deposition time is 30 s-120 s; the working gas comprises argon at a flow rate of 100 sccm-200 sccm; the thickness of the high-resistance film is 5 nm-8 nm; The sheet resistance of the high resistance film is 1 x 10 7 Ω / □~1 x 10 10 Ω / □; the light transmittance of the high-resistance film at 550 nm is 95%-99%. 2.The method of claim 1, wherein, the deposition time is 45 s.

3. The method for manufacturing a touch display panel as described in claim 1, characterized in that, the pressure of the working gas is 0.1 Pa-2 Pa.

4. The method for manufacturing a touch display panel as described in claim 1, characterized in that, the power source of the electric field is one or more of a radio frequency power source, a medium frequency power source, and a pulsed direct current power source. 5.The method of claim 4, wherein the first and second transparent conductive layers are formed by a sputtering method. the power source of the electric field satisfies one or more of the following conditions: 1) the frequency of the radio frequency power source is 10 MHz-15 MHz, and the voltage is 300 V-400 V; 2) the frequency of the medium frequency power source is 30 kHz-50 kHz, and the voltage is 500 V-600 V; 3) the frequency of the pulsed direct current power source is 50 Hz-40 kHz, the voltage is 300 V-400 V, the current is 5 A-15 A, and the duty cycle is 1%-95%.

6. The method for manufacturing a touch display panel as described in claim 1, characterized in that, the magnetic field strength on the surface of the FTO target is 10 T-50 T. 7.The method of claim 1, wherein, the substrate is a glass substrate and / or a polymer substrate. 8.The method of claim 1, wherein, The vacuum degree of the vacuum condition is ≤ 10 -3 Pa. 9.The method of any one of claims 1-8, wherein, satisfies one or more of the following conditions: 1) square resistance of 1.2 x 10 7 Ω / □~2 x 10 9 Ω / □; 2) the light transmittance at 550 nm is 95.8%-99%. 10.A touch display panel, characterized in that, is prepared using the method of any one of claims 1-9.

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