Crystal temperature determination method, device, terminal and computer readable storage medium
By determining the temperature profile of the crystal and correcting the temperature offset and hysteresis, the problem of inaccurate crystal temperature acquisition in low-cost terminals was solved, achieving accurate temperature determination and improved network registration efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- UNIGROUP SPREADTRUM COMM HUIZHOU CO LTD
- Filing Date
- 2023-03-20
- Publication Date
- 2026-05-19
AI Technical Summary
In low-cost terminals, ordinary crystals do not have built-in thermistors, which makes it impossible to accurately obtain temperature and affects network registration efficiency.
By determining the temperature profile of the crystal, the PCB layout relationship between the thermistor and the crystal, and correcting for temperature offset and hysteresis, the current temperature of the crystal is determined using the temperature of the thermistor.
This improved the accuracy of crystal temperature acquisition and enhanced the efficiency and stability of terminal network registration.
Smart Images
Figure CN116242503B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of communication technology, specifically to a method, apparatus, terminal, and computer-readable storage medium for determining the temperature of a crystal. Background Technology
[0002] In most low-cost terminals, such as narrowband Internet of Things (NB-IoT) modules and feature phones, ordinary crystals are typically used to save on production costs. However, since ordinary crystals do not have built-in thermistors, the terminal cannot obtain the temperature of the crystal. Summary of the Invention
[0003] This application provides a method, apparatus, terminal, and computer-readable storage medium for determining the temperature of a crystal, which helps to accurately obtain the temperature of the crystal in the terminal.
[0004] In a first aspect, embodiments of this application provide a method for determining the temperature of a crystal, applied to a terminal, the terminal including a temperature detection circuit and a crystal, the crystal having no built-in thermistor, the temperature detection circuit including a thermistor, the temperature detection circuit being used to determine the temperature of the thermistor;
[0005] The method includes:
[0006] Determine the temperature profile of the crystal, which is used to characterize the frequency shift of the crystal at different temperatures;
[0007] Based on the printed circuit board (PCB) layout relationship between the thermistor and the crystal, a first temperature measurement function of the crystal is determined. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal.
[0008] Determine a temperature offset, which is used to characterize the offset between the temperature of the crystal during the terminal registration network process and the temperature of the crystal obtained by the first temperature measurement function;
[0009] Determine the temperature hysteresis, which is used to characterize the time difference corresponding to the temperature difference of different temperature curves of the crystal at the same frequency deviation;
[0010] The first temperature measurement function is corrected based on the temperature offset and the temperature hysteresis to obtain the second temperature measurement function;
[0011] The current temperature of the crystal is determined based on the temperature of the thermistor and the second temperature measurement function.
[0012] Implementing the first aspect of the embodiments of this application has the following beneficial effects:
[0013] This application embodiment can determine the temperature profile of a crystal, which characterizes the frequency deviation of the crystal at different temperatures. Based on the PCB layout relationship between the thermistor and the crystal, a first temperature measurement function of the crystal is determined. The first temperature measurement function indicates the correspondence between the temperature of the thermistor and the temperature of the crystal. A temperature offset is determined, which characterizes the offset between the crystal temperature during the terminal registration process and the crystal temperature obtained through the first temperature measurement function. A temperature hysteresis is determined, which characterizes the time difference corresponding to the temperature difference of different temperature profiles of the crystal at the same frequency deviation. Based on the temperature offset and temperature hysteresis, the first temperature measurement function is corrected to obtain a second temperature measurement function. Based on the temperature of the thermistor and the second temperature measurement function, the current temperature of the crystal is determined. Thus, for crystals without built-in thermistors, their corresponding temperature profiles can be determined separately, and the temperature measurement function can be determined based on the PCB layout relationship between the thermistor and the crystal. Determining the current temperature of the crystal through the temperature measurement function helps to ensure the accuracy of the obtained current temperature of the crystal.
[0014] Secondly, embodiments of this application provide a crystal temperature determination device applied to a terminal, the terminal including a temperature detection circuit and a crystal, the crystal having no built-in thermistor, the temperature detection circuit including a thermistor, the temperature detection circuit being used to determine the temperature of the thermistor;
[0015] The device includes:
[0016] The first determining unit is used to determine the temperature curve of the crystal, which is used to characterize the frequency deviation of the crystal at different temperatures.
[0017] The second determining unit is used to determine a first temperature measurement function of the crystal based on the printed circuit board (PCB) layout relationship between the thermistor and the crystal. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal.
[0018] The third determining unit is used to determine the temperature offset, which is used to characterize the offset between the temperature of the crystal and the temperature of the crystal obtained by the first temperature measurement function during the terminal registration network process.
[0019] The fourth determining unit is used to determine the temperature hysteresis, which is used to characterize the time difference corresponding to the temperature difference of different temperature curves of the crystal under the same frequency deviation.
[0020] The correction unit is used to correct the first temperature measurement function according to the temperature offset and the temperature hysteresis to obtain the second temperature measurement function;
[0021] A temperature determination unit is used to determine the current temperature of the crystal based on the temperature of the thermistor and the second temperature measurement function.
[0022] Thirdly, embodiments of this application provide a terminal, including a processor, a memory, and a computer program or instructions stored in the memory, wherein the processor executes the computer program or instructions to implement the steps in the first aspect of embodiments of this application.
[0023] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program for electronic data interchange, wherein the computer program causes a computer to execute instructions for some or all of the steps described in the first aspect of embodiments of this application.
[0024] Fifthly, embodiments of this application provide a computer program product, wherein the computer program product includes a computer program operable to cause a computer to perform some or all of the steps described in the first aspect of embodiments of this application.
[0025] The beneficial effects of the technical solutions in the second to fifth aspects can be found in the technical effects of the technical solution in the first aspect, and will not be repeated here. Attached Figure Description
[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0027] Figure 1 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application;
[0028] Figure 2 This is a schematic flowchart of a method for determining the temperature of a crystal provided in an embodiment of this application;
[0029] Figure 3 This is a schematic diagram of the temperature detection circuit provided in an embodiment of this application;
[0030] Figure 4 This is a schematic diagram of the temperature curve of a crystal provided in an embodiment of this application;
[0031] Figure 5 This is a schematic diagram of a testing device provided in an embodiment of this application;
[0032] Figure 6This is a schematic diagram of a PCB layout for a crystal and a thermistor provided in an embodiment of this application;
[0033] Figure 7 This is a schematic diagram of a PCB layout for a crystal and a thermistor provided in an embodiment of this application;
[0034] Figure 8 This is a schematic diagram of a PCB layout for a crystal and a thermistor provided in an embodiment of this application;
[0035] Figure 9 This is a schematic diagram of a PCB layout for a crystal and a thermistor provided in an embodiment of this application;
[0036] Figure 10 This is a schematic diagram of a PCB layout for a crystal and a thermistor provided in an embodiment of this application;
[0037] Figure 11 This is a schematic diagram of a temperature distribution provided in an embodiment of this application;
[0038] Figure 12 This is a schematic diagram of a temperature hysteresis provided in an embodiment of this application;
[0039] Figure 13 This is a schematic diagram of the architecture of a crystal temperature determination device provided in an embodiment of this application;
[0040] Figure 14 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application. Detailed Implementation
[0041] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0042] The terms "first," "second," "third," and "fourth," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.
[0043] In this document, the term "embodiment" means that a particular feature, result, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0044] I. Terminal
[0045] The terminals in this application may include electronic devices, user equipment (UE), smartphones (such as Android phones, iOS phones, Windows Phones, etc.), feature phones, tablet computers, PDAs, laptops, mobile internet devices (MIDs), wearable devices, mobile communication modules (such as NB-IoT, CAT1, etc.), etc. Terminals may also include servers, but are not limited thereto. The above terminals are merely examples and not exhaustive, and include, but are not limited to, the terminals described above.
[0046] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application. The terminal includes a processor and a memory, etc.
[0047] The memory is connected to the processor. The processor is the control center of the terminal, connecting all parts of the terminal through various interfaces and lines. It executes various functions and processes data by running or executing software programs and / or modules stored in the memory, and calling data stored in the memory, thereby performing overall monitoring of the terminal. The processor can be a central processing unit (CPU), a graphics processing unit (GPU), or a neural-network processing unit (NPU).
[0048] The memory stores software programs and / or modules, and the processor executes various functional applications of the terminal by running the software programs and / or modules stored in the memory. The memory may include programs, which include flow execution functions used to execute this solution. The memory may also include a program storage area and a data storage area, wherein the program storage area may store the operating system, software programs required for at least one function, etc.; the data storage area may store data created based on the use of the terminal, etc. Furthermore, the memory may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other volatile solid-state storage device.
[0049] II. A method for determining the temperature of a crystal
[0050] 1. Description
[0051] Currently, most terminals use ordinary crystals to save on production costs. However, because ordinary crystals cannot accurately provide the crystal temperature to the terminal, the temperature coefficient cannot be calibrated at the factory. During the network registration process, since the terminal has difficulty knowing the accurate crystal temperature and lacks a frequency offset curve for reference, it is prone to longer network signal search times under high and low temperature conditions, resulting in lower network registration efficiency.
[0052] Please see Figure 2 , Figure 2 This is a flowchart illustrating a method for determining the temperature of a crystal, as provided in an embodiment of this application. The method is applied to a terminal, which includes a temperature detection circuit and a crystal. The crystal has no built-in thermistor, while the temperature detection circuit includes a thermistor. The temperature detection circuit is used to determine the temperature of the thermistor.
[0053] For example, please refer to Figure 3 The terminal's temperature detection circuit includes, but is not limited to: RF_TEMP_ADC, Board_TEMP_ADC, OSC_TEMP_ADC, and a battery temperature detection circuit. The RF_TEMP_ADC is typically placed near the power amplifier in the RF front-end of the wireless communication system for thermocouple temperature compensation. The Board_TEMP_ADC has a variable location and is more flexible in its placement. The OSC_TEMP_ADC is built into the chip oscillator circuit and is generally closest to the crystal (XTAL). The battery temperature detection circuit is located on the edge of the PCB board.
[0054] In some possible embodiments, the temperature of the oscillator (OSC) measured by OSC_TEMP_ADC can be used instead of the crystal temperature, and the crystal temperature can be corrected according to the thermal simulation results under different application scenarios.
[0055] This application provides a method for determining the temperature of a crystal, including but not limited to the following steps:
[0056] S201. Determine the temperature profile of the crystal. The temperature profile is used to characterize the frequency shift of the crystal at different temperatures.
[0057] Understandably, the temperature curves differ for different crystals, but they can all be described by the following cubic function:
[0058] F=c3*(t-t0)^3+c2*(t-t0)^2+c1*(t-t0)+c0;
[0059] Where F is the frequency offset (dependent variable), t is the current temperature of the crystal (independent variable), t0 is the reference temperature (e.g., room temperature 25°C), and c0, c1, c2, and c3 are temperature coefficients of each order.
[0060] For example, please see Figure 4 , Figure 4 This is a schematic diagram of the temperature curve of a crystal provided in an embodiment of this application.
[0061] In the embodiments of this application, it can be achieved through Figure 5 The test setup shown acquires the temperature profiles of different crystals. The frequency offset in the temperature profile can be measured using a data acquisition instrument and a spectrum analyzer (or comprehensive analyzer), with the temperature reference source provided by a temperature control chamber. The specific operating steps are as follows:
[0062] 1) Set the terminal to test mode, keeping only the minimum RF system working, and the terminal does not transmit RF signals.
[0063] 2) Place the terminal in the temperature control chamber.
[0064] 3) Control the temperature control box to enter the specified temperature, wait for the temperature to stabilize, and record the current temperature.
[0065] 4) Through a communication interface (such as a phone command interface), the control terminal transmits radio frequency signals at minimum power. After being analyzed by the comprehensive tester, the frequency deviation corresponding to the current temperature is obtained, and the frequency deviation is recorded to the computer.
[0066] 5) The terminal turns off the radio frequency signal.
[0067] 6) Switch the temperature control box to the next temperature point and repeat steps 2-5 until all temperature points within the terminal's operating temperature range are recorded.
[0068] The key points of the above operation process are as follows:
[0069] 1) During operation, the terminal itself should be kept as cool as possible. For example, the terminal should be set to test mode, with only the minimum RF system working. The RF transmission state of the terminal should be normally off. When transmitting RF signals, transmit at the minimum power level and turn off immediately after transmission, etc.
[0070] 2) When switching to the next temperature point, a period of time is required for the temperature to stabilize. (This also serves as a reference for determining the temperature hysteresis in the following text.)
[0071] Furthermore, the accuracy of the temperature curve obtained from the above operations can be determined as follows: if the frequency deviation is 0 at the current temperature of 25 degrees Celsius, then the final generated temperature curve is accurate. Understandably, the crystal is part of a digitally controlled crystal oscillator (DCXO). The DCXO requires frequency deviation calibration at the factory, which involves placing the terminal in a 25-degree Celsius temperature-controlled chamber, setting the terminal to calibration mode, adjusting the coarse adjustment capacitor (Capacitor Digital-to-Analog Converter, CDAC) value inside the terminal to achieve a frequency deviation of 0 at 25 degrees Celsius, and saving the corresponding CDAC value to the terminal. Thus, by determining whether the frequency deviation of the temperature curve at 25 degrees Celsius is 0, the accuracy of the final generated temperature curve can be confirmed.
[0072] S202. Based on the printed circuit board (PCB) layout relationship between the thermistor and the crystal, determine the first temperature measurement function of the crystal. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal.
[0073] Understandably, the different layout relationships of the thermistor and the crystal on the printed circuit board (PCB) result in different temperature measurement functions for the corresponding crystal.
[0074] When designing a PCB layout, to ensure uniform heat distribution, a complete ground plane (such as...) is required in the area where the thermistor and crystal are located. Figure 6 As shown in the diagram, the more ground plane layers there are, the better for PCB heat dissipation. Furthermore, vias connecting the thermistor to the ground plane are necessary to facilitate rapid temperature transfer. Additionally, the absence of other heat sources in the area where the thermistor and crystal are located also helps ensure accurate temperature measurement.
[0075] S203. Determine the temperature offset. The temperature offset is used to characterize the offset between the temperature of the crystal and the temperature of the crystal obtained by the first temperature measurement function during the terminal registration process.
[0076] Understandably, although the calculated temperature of the thermistor can basically reflect the temperature of the crystal, in practical applications, the crystal wafer is protected by a base and shell, and the crystal has a three-dimensional structure. As the crystal dissipates heat, the temperature changes gradually. Furthermore, because the first temperature measurement function is a linear calculation, or there may be cases where the position of the crystal and the position of the thermistor are not on the same straight line (detailed below), it is necessary to correct for the temperature offset of the first temperature measurement function.
[0077] S204. Determine the temperature hysteresis. The temperature hysteresis is used to characterize the time difference corresponding to the temperature difference of different temperature curves of a crystal at the same frequency deviation.
[0078] Understandably, during heating or cooling, the ADC voltage value of the temperature detection circuit can directly reflect the temperature at the location of the thermistor. However, the heating and cooling of the crystal wafer is relatively delayed. Therefore, temperature hysteresis correction is required.
[0079] S205. Based on the temperature offset and temperature hysteresis, the first temperature measurement function is corrected to obtain the second temperature measurement function.
[0080] S206. Determine the current temperature of the crystal based on the temperature of the thermistor and the second temperature measurement function.
[0081] In specific implementation, it can be done through... Figure 5 The test apparatus shown determines the temperature profile of the crystal and, based on the PCB layout relationship between the thermistor and the crystal, determines the first temperature measurement function of the crystal. The first temperature measurement function is corrected according to the temperature offset and temperature hysteresis to obtain the second temperature measurement function. The current temperature of the crystal is determined based on the temperature of the thermistor and the second temperature measurement function.
[0082] Based on the temperature curve and the current temperature of the crystal, the frequency offset at the current temperature can be determined. From this frequency offset, the corresponding automatic frequency control (AFC) compensation value for the current temperature can be calculated, serving as a preset value for cell search of the network signal. The phase-locked loop (PLL) circuit is then compensated based on this preset value, and cell search is performed again. After successful network registration, the AFC value can be adjusted according to the actual cell network signal to ensure that the downlink reference signal capability demodulated at the current temperature reaches its peak, thus helping to ensure network communication stability.
[0083] Implementing the embodiments of this application has the following beneficial effects:
[0084] This application embodiment can determine the temperature profile of a crystal, which characterizes the frequency offset of the crystal at different temperatures. Based on the PCB layout relationship between the thermistor and the crystal, a first temperature measurement function of the crystal is determined. The first temperature measurement function indicates the correspondence between the temperature of the thermistor and the temperature of the crystal. A temperature offset is determined, which characterizes the offset between the crystal temperature and the crystal temperature obtained through the first temperature measurement function during the terminal network registration process. A temperature hysteresis is determined, which characterizes the time difference corresponding to the temperature difference of different temperature profiles of the crystal at the same frequency offset. Based on the temperature offset and temperature hysteresis, the first temperature measurement function is corrected to obtain a second temperature measurement function. Based on the temperature of the thermistor and the second temperature measurement function, the current temperature of the crystal is determined. Thus, for crystals without built-in thermistors, their corresponding temperature profiles can be determined separately, and the temperature measurement function can be determined based on the PCB layout relationship between the thermistor and the crystal. Determining the current temperature of the crystal through the temperature measurement function helps ensure the accuracy of the obtained current temperature of the crystal, thereby helping the terminal to accurately calculate the corresponding frequency offset based on the temperature profile and the current temperature of the crystal, which helps improve the efficiency of terminal network registration.
[0085] Furthermore, for crystals with built-in thermistors, optimizing the temperature determination method provided in the embodiments of this application also helps to ensure the accuracy of the measured crystal temperature.
[0086] 2. Detailed Explanation
[0087] The technical solutions and beneficial effects involved in the embodiments of this application will be described in detail below.
[0088] 1) How to determine the first temperature sensing function of the crystal based on the PCB layout relationship between the thermistor and the crystal?
[0089] The following describes in detail some implementation methods for determining the first temperature measurement function of a crystal based on the PCB layout relationship between the thermistor and the crystal.
[0090] In some possible embodiments, the PCB layout relationship between the thermistor and the crystal includes:
[0091] The crystal and thermistor are symmetrically distributed on both sides of the PCB; or,
[0092] The crystal is located on the PCB between two thermistors; or,
[0093] The crystal is located on the PCB between three or more thermistors.
[0094] It should be noted that, as Figures 6-10 As shown, Figure 6 The crystal and thermistor are symmetrically distributed on both sides of the PCB. Figures 7-8 The XTAL crystal is located between two thermistors (NTC1 and NTC2) on the PCB. Figures 9-10 The XTAL crystal is located on the PCB between three or more thermistors (NTC3, NTC4, NTC5, etc.).
[0095] Please see Figure 6 In some possible embodiments, S202 above, determining a first temperature measurement function for the crystal based on the PCB layout relationship between the thermistor and the crystal, wherein the first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal, may include the following steps:
[0096] S2021. If the crystal and the thermistor are symmetrically distributed on the front and back sides of the PCB, then the first temperature measurement function is F(t) = N(t).
[0097] Where F(t) is the temperature of the crystal, N(t) is the temperature of the thermistor, and t is time.
[0098] As mentioned earlier, there is a complete ground plane in the area where the thermistor and the crystal are located, and there are through holes near the thermistor connected to the ground plane. Therefore, if the crystal and the thermistor are symmetrically distributed on the front and back sides of the PCB, the temperature between the thermistor and the crystal is relatively close, and the first temperature measurement function is F(t) = N(t).
[0099] Please see Figures 7-8 In some possible embodiments, S202 above, determining a first temperature measurement function for the crystal based on the PCB layout relationship between the thermistor and the crystal, wherein the first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal, may include the following steps:
[0100] S2022. If the crystal is located between two thermistors on the PCB, then the first temperature measurement function is F(t) = N1(t) + [N2(t) - N1(t)] * L1 / (L1 + L2);
[0101] Where F(t) is the temperature of the crystal, N1(t) is the temperature of the first thermistor NTC1 among the two thermistors, N2(t) is the temperature of the second thermistor NTC2 among the two thermistors, L1 is the distance between the crystal and the first thermistor NTC1 on the PCB, L2 is the distance between the crystal and the second thermistor NTC2 on the PCB, and t is time.
[0102] It should be noted that the position of the components is measured with reference to the geometric center of the components. Figure 7 In this case, the geometric center of the crystal lies precisely on the line connecting the geometric centers of the two thermistors. Figure 8In this case, the line connecting the geometric center of the crystal and the geometric centers of the two thermistors is slightly offset. These two cases can be combined because a temperature offset calibration step will be performed during the subsequent correction of the first temperature measurement function. Therefore, even if there is one L... offset It can also be calibrated.
[0103] Please see Figure 9 In some possible embodiments, S202 above, determining a first temperature measurement function for the crystal based on the PCB layout relationship between the thermistor and the crystal, wherein the first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal, may include the following steps:
[0104] S2023. If the crystal is located between three thermistors on the PCB, then the first temperature measurement function is F(t,x,y)=-(D / C)-(B / C)*y-(A / C)*x.
[0105] A=(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t)),
[0106] B=(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t)),
[0107] C=(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t)),
[0108] D = -(A*X1 + B*Y1 + C*N1(t));
[0109] Where F(t) is the temperature of the crystal, t is the time, X1 is the x-axis of the third thermistor NTC3, X2 is the x-axis of the fourth thermistor NTC4, X3 is the x-axis of the fifth thermistor NTC5, Y1 is the y-axis of the third thermistor NTC3, Y2 is the y-axis of the fourth thermistor NTC4, and Y3 is the y-axis of the fifth thermistor NTC5.
[0110] In practical implementation, a plane equation A*x + B*y + C*z + D = 0 can be generated based on the coordinates of the three thermistors. For example, the coordinates and temperatures of the three thermistors M1, M2, and M3 are shown in Table 1:
[0111] Table 1. Coordinates and temperatures of thermistors M1, M2, and M3
[0112] The plane equation can be obtained through linear algebraic calculations:
[0113] A=(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t)),
[0114] B=(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t)),
[0115] C=(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t)),
[0116] D = -(A*X1 + B*Y1 + C*N1(t));
[0117] Therefore, the first thermometric function of the crystal is F(t,x,y)=-(D / C)-(B / C)*y-(A / C)*x.
[0118] For example, given the coordinates and temperatures of the following three thermistors:
[0119] M1 M2 M3 The x-axis of the thermal element 0.9 2.5 0.3 The ordinate Y of the thermistor 0.7 1.5 1.9 The temperature Z of the thermistor 30 20 18
[0120] Table 2. Examples of coordinates and temperatures for thermistors M1, M2, and M3.
[0121] Linear algebra calculations yield the plane equation: 2.4x + 25.2y + 2.4z – 92 = 0. Therefore, the temperature at any point within the region is F(x, y) = 38.25 – x – 10.5y. Substituting these values into the crystal's coordinates within the plane, we can obtain the crystal's current temperature. A schematic diagram of the current temperature distribution on the plane is shown below. Figure 11 As shown.
[0122] Please see Figure 10 In some possible embodiments, the crystal is located on the PCB between three or more thermistors. In this case, the final temperature distribution map may be a curved surface. Therefore, the current temperature of the crystal can be calculated by fitting the curved surface according to certain rules, or the current temperature of the crystal can be calculated by using the three thermistors closest to the crystal as references and following the planar equations described above. There is no limitation here.
[0123] As can be seen from the above embodiments of this application, when the crystal does not have a built-in thermistor, the first temperature measurement function of the crystal is determined according to the PCB layout relationship between the thermistor and the crystal. This helps to accurately determine the first temperature measurement function of the crystal under different layout methods.
[0124] 2) How to determine the temperature offset
[0125] The following section provides a detailed explanation of some implementation methods for determining temperature offset.
[0126] In some possible embodiments, S203 above, determining the temperature offset, which characterizes the offset between the crystal temperature during the terminal registration process and the crystal temperature obtained through the first temperature measurement function, may include the following steps:
[0127] S2031. During the process of terminal registration with the network, the first frequency offset corresponding to the first AFC value is obtained. The first AFC value represents the AFC value required for the signal energy of the downlink reference signal demodulated by the terminal to reach its peak value.
[0128] S2032. Based on the first frequency offset and temperature curve, determine the first temperature value of the crystal. The first temperature value characterizes the temperature of the crystal during the terminal registration process.
[0129] S2033. Determine the second temperature value of the crystal based on the temperature of the thermistor and the first temperature measurement function.
[0130] S2034. The difference between the first temperature value and the second temperature value is used as the temperature offset.
[0131] In practice, after the terminal powers on normally, it connects to the testing instrument via signaling to ensure that the terminal can register with the network. After the terminal has been working normally for a period of time and the temperature has stabilized, the internal AFC circuit of the terminal will compensate for the frequency offset of the crystal caused by the current temperature. The first frequency offset of the crystal at the current temperature can be obtained based on the AFC compensation value (the first AFC value). Based on the first frequency offset and the temperature curve of the crystal, the first temperature value T1 of the crystal is determined, which is the current temperature of the crystal during the terminal's network registration process.
[0132] The temperature of the thermistor in the temperature detection circuit is determined, and a second temperature value T2 of the crystal is determined based on the temperature of the thermistor and the first temperature measurement function. Specifically, the temperature of the thermistor can be determined by: obtaining the ADC voltage value of the temperature detection circuit, and determining the temperature of the thermistor through the correspondence between the ADC voltage value and the temperature of the thermistor. More specifically, the correspondence between the ADC voltage value and the temperature of the thermistor can be determined through... Figure 5 The test device shown is used to obtain the ADC voltage value of each temperature sampling circuit at the current temperature. The specific operation steps are basically the same as those described above. The ADC voltage-temperature curve can be plotted according to the correspondence between temperature and ADC voltage value.
[0133] The difference between the first temperature value T1 and the second temperature value T2 is taken as the temperature offset, i.e., offset = T1 – T2. As mentioned earlier, the first temperature value T1 is the temperature of the crystal during the terminal registration process, and the second temperature value T2 is the temperature of the crystal obtained through the first temperature measurement function. The difference between the two is the offset of the first temperature measurement function in actual application. Therefore, the temperature measurement function after temperature offset correction is: T 1XTAL =F(t)+offset.
[0134] Furthermore, by adjusting the terminal's transmit power, S2031-S2034 are repeated to obtain multiple temperature offsets, and the consistency of the temperature offsets is checked.
[0135] As can be seen, in this embodiment of the application, during the terminal registration process, the first frequency offset corresponding to the first AFC value can be obtained. The first AFC value represents the AFC value required for the signal energy of the downlink reference signal demodulated by the terminal to reach its peak value. Based on the first frequency offset and the temperature curve, the first temperature value of the crystal is determined. The first temperature value characterizes the temperature of the crystal during the terminal registration process. Based on the temperature of the thermistor and the first temperature measurement function, the second temperature value of the crystal is determined. The difference between the first temperature value and the second temperature value is used as the temperature offset. In this way, temperature offset correction of the temperature measurement function helps to ensure the accuracy of the current temperature of the crystal obtained in the end, thereby accurately calculating the frequency offset corresponding to the current temperature, which helps to improve the efficiency of terminal registration.
[0136] 3) How to determine the temperature hysteresis?
[0137] The following provides a detailed explanation of some methods for determining the temperature hysteresis.
[0138] In some possible embodiments, S204 above, determining the temperature hysteresis, which characterizes the time difference corresponding to the temperature difference of different temperature profiles of the crystal at the same frequency offset, may include the following steps:
[0139] S2041. Place the terminal in a temperature control chamber and adjust the temperature of the chamber to obtain the target temperature curve of the crystal.
[0140] S2042. Calculate the temperature difference between the target temperature curve and the crystal temperature curve when the frequency deviation is a preset value.
[0141] S2043. The time difference corresponding to the temperature difference is used as the temperature hysteresis.
[0142] For example, the temperature of the temperature control chamber can be set below -40 degrees (e.g., -42 degrees). After the temperature stabilizes, the terminal is placed in the temperature control chamber, and the temperature control chamber is controlled to rise at a certain temperature slope, such as rising from -40 degrees to 80 degrees in two hours. Then the temperature slope is 120 degrees / 2 hours = 1 degree / minute.
[0143] Please see Figure 12 By comparing the temperature curve measured by S201 with the temperature curve measured during the heating process, it can be found that there is a certain delay, that is, the temperature at the zero point is different. For example, if the temperature difference at the zero point is 2 degrees, then according to the temperature rise slope, the delay H = 2 minutes can be obtained.
[0144] Therefore, the temperature measurement function after temperature hysteresis correction is: T 2XTAL = F(tH). For example, F(t-2) can represent the temperature of XTAL as the temperature obtained by sampling the ADC voltage 2 minutes ago. The temperature measurement function after temperature offset correction and temperature hysteresis correction is: T XTAL =F(tH)+offset.
[0145] Similarly, the temperature hysteresis during the cooling process can also be obtained. The temperature control box can also cool down according to a certain temperature slope during the cooling process, which will not be elaborated here.
[0146] As can be seen, in this embodiment, the terminal can be placed in a temperature control chamber, the temperature of the chamber can be adjusted to obtain the target temperature curve of the crystal, the temperature difference between the target temperature curve and the crystal's temperature curve when the frequency deviation is a preset value can be calculated, and the time difference corresponding to the temperature difference can be used as the temperature hysteresis. In this way, the hysteresis of the heating and cooling of the wafer in the crystal can be corrected by the temperature hysteresis, which helps to ensure the accuracy of the current temperature of the crystal obtained in the end, thereby accurately calculating the frequency deviation corresponding to the current temperature, which helps to improve the efficiency of terminal network registration.
[0147] 4) How to optimize and apply the second temperature measurement function.
[0148] The following section provides a detailed explanation of some implementation methods for optimizing and applying the second temperature measurement function.
[0149] Understandably, T XTAL =F(tH)+offset is obtained in a relatively fixed environment. In practical applications (including production line calibration), temperature fluctuations will occur. Therefore, F(t) needs to be integrated and filtered to smooth out and passivate large temperature fluctuations. The integration time can be adjusted according to the actual situation.
[0150] Furthermore, since the terminal contains many modules, such as the Radio Frequency Front-End (RFFE) module, the Wireless Communication Network (WCN) module, the LCD display module, the charging module, etc., different application scenarios involve different combinations of these modules, which may cause changes in the factors affecting the crystal temperature. Therefore, further optimizations can be made specifically for these application scenarios to ensure the accuracy of the measured current crystal temperature.
[0151] In practical implementation, for a terminal with a measured crystal temperature curve, and having successfully registered with the network in a certain application scenario, the terminal's AFC compensation value corresponds to the frequency offset, and the current temperature T of the crystal can be obtained from the temperature curve. a (A general temperature range is required). The measured current temperature T of the crystal... a With T XTAL By comparing the results of =F(tH) + offset, we can see the difference between the temperature measurement function and the actual temperature, thus obtaining the temperature offset (scenario) for each application scenario. The optimized temperature measurement function is: T XTAL (t,scenario)=F(tH)+offset(scenario). The optimized temperature measurement function can be embedded into the software for subsequent production and network searching of other terminals.
[0152] III. A device for determining the temperature of a crystal
[0153] 1) Description
[0154] The above mainly describes the solutions of the embodiments of this application from the perspective of the method execution process. It is understood that, in order to achieve the above functions, the terminal may include hardware structures and / or software modules corresponding to the execution of each function. Those skilled in the art should recognize that the methods, functions, modules, units, or steps described in conjunction with the embodiments provided herein can be implemented in hardware or a combination of hardware and computer software. Whether a method, function, module, unit, or step is executed in hardware or by computer software driving hardware depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described methods, functions, modules, units, or steps for each specific application, but such implementation should not be considered beyond the scope of this application.
[0155] This application embodiment can divide functional units / modules according to the above method examples. For example, each function can be divided into a separate functional unit / module, or two or more functions can be integrated into one functional unit / module. The integrated functional unit / module can be implemented in hardware or software. It should be noted that the division of functional units / modules in this application embodiment is illustrative and only represents a logical functional division; in actual implementation, there may be other division methods.
[0156] In the case of using integrated units, please refer to Figure 13 , Figure 13 This is a functional unit block diagram of a crystal temperature determination device provided in an embodiment of this application. The crystal temperature determination device 1300 includes: a first determination unit 1301, a second determination unit 1302, a third determination unit 1303, a fourth determination unit 1304, a correction unit 1305, and a temperature determination unit 1306.
[0157] In some possible implementations, the first determining unit 1301, the second determining unit 1302, the third determining unit 1303, the fourth determining unit 1304, the correction unit 1305, and the temperature determining unit 1306 may be separate units or integrated into the same unit.
[0158] For example, the first determining unit 1301, the second determining unit 1302, the third determining unit 1303, the fourth determining unit 1304, the correction unit 1305, and the temperature determining unit 1306 can be integrated into the processing unit.
[0159] It should be noted that the processing unit can be a processor or controller, such as a central processing unit (CPU), a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. The processing unit can also be a combination that implements computational functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.
[0160] In some possible implementations, the crystal temperature determination device 1300 may further include a storage unit for storing computer programs or instructions executed by the crystal temperature determination device 1300. This storage unit may be a memory.
[0161] In some possible designs, the temperature determination device 1300 of the crystal can be a chip / chip module / processor / device / operating system.
[0162] In specific implementation, the first determining unit 1301, the second determining unit 1302, the third determining unit 1303, the fourth determining unit 1304, the correction unit 1305, and the temperature determining unit 1306 are used to perform the steps described in the above method embodiments. A detailed description follows.
[0163] The first determining unit 1301 is used to determine the temperature curve of the crystal, which is used to characterize the frequency deviation of the crystal at different temperatures.
[0164] The second determining unit 1302 is used to determine the first temperature measurement function of the crystal based on the printed circuit board (PCB) layout relationship between the thermistor and the crystal. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal.
[0165] The third determining unit 1303 is used to determine the temperature offset, which is used to characterize the offset between the temperature of the crystal and the temperature of the crystal obtained by the first temperature measurement function during the terminal registration network process.
[0166] The fourth determining unit 1304 is used to determine the temperature hysteresis, which is used to characterize the time difference corresponding to the temperature difference of different temperature curves of the crystal at the same frequency deviation.
[0167] The correction unit 1305 is used to correct the first temperature measurement function based on the temperature offset and temperature hysteresis to obtain the second temperature measurement function.
[0168] The temperature determination unit 1306 is used to determine the current temperature of the crystal based on the temperature of the thermistor and the second temperature measurement function.
[0169] As can be seen, the embodiments of this application can determine the temperature profile of the crystal, which is used to characterize the frequency offset of the crystal at different temperatures. Based on the PCB layout relationship between the thermistor and the crystal, a first temperature measurement function of the crystal is determined. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal. A temperature offset is determined, which is used to characterize the offset between the temperature of the crystal and the temperature of the crystal obtained through the first temperature measurement function during the terminal registration network process. A temperature hysteresis is determined, which is used to characterize the time difference corresponding to the temperature difference of different temperature profiles of the crystal at the same frequency offset. Based on the temperature offset and the temperature hysteresis, the first temperature measurement function is corrected to obtain a second temperature measurement function. Based on the temperature of the thermistor and the second temperature measurement function, the current temperature of the crystal is determined. Thus, for crystals without built-in thermistors, their corresponding temperature profiles can be determined separately, and the temperature measurement function can be determined based on the PCB layout relationship between the thermistor and the crystal. Determining the current temperature of the crystal through the temperature measurement function helps to ensure the accuracy of the current temperature of the crystal, thereby helping the terminal to accurately calculate the corresponding frequency offset based on the temperature profile and the current temperature of the crystal, which helps to improve the efficiency of terminal network registration.
[0170] It should be noted that the specific implementation of each operation performed by the crystal temperature determining device 1300 can be found in the corresponding description of the above method embodiments, and will not be repeated here.
[0171] 2) Other possible implementation methods
[0172] The following section will explain some of the implementation methods involved. For other content not covered, please refer to the above description for details, which will not be repeated here.
[0173] In some possible embodiments, the third determining unit 1303 is used for determining the temperature offset as follows:
[0174] During the process of terminal registration with the network, the first frequency offset corresponding to the first AFC value is obtained. The first AFC value represents the AFC value required for the signal energy of the downlink reference signal demodulated by the terminal to reach its peak value.
[0175] Based on the first frequency offset and temperature curve, the first temperature value of the crystal is determined. The first temperature value characterizes the temperature of the crystal during the terminal registration process.
[0176] The second temperature value of the crystal is determined based on the temperature of the thermistor and the first temperature measurement function;
[0177] The difference between the first temperature value and the second temperature value is used as the temperature offset.
[0178] In some possible embodiments, the fourth determining unit 1304 is used to: determine the amount of temperature hysteresis
[0179] When the terminal is placed in a temperature control chamber, the temperature of the temperature control chamber is adjusted to obtain the target temperature curve of the crystal.
[0180] Calculate the temperature difference between the target temperature curve and the crystal temperature curve when the frequency deviation is a preset value;
[0181] The time difference corresponding to the temperature difference is used as the temperature hysteresis.
[0182] In some possible embodiments, the PCB layout relationship between the thermistor and the crystal includes:
[0183] The crystal and thermistor are symmetrically distributed on both sides of the PCB; or,
[0184] The crystal is located on the PCB between two thermistors; or,
[0185] The crystal is located on the PCB between three or more thermistors.
[0186] In some possible embodiments, the second determining unit 1302 is used to: determine the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal.
[0187] If the crystal and the thermistor are symmetrically distributed on both sides of the PCB, then the first temperature measurement function is F(t) = N(t);
[0188] Where F(t) is the temperature of the crystal, N(t) is the temperature of the thermistor, and t is time.
[0189] In some possible embodiments, the second determining unit 1302 is used to: determine the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal.
[0190] If the crystal is located between two thermistors on the PCB, then the first temperature measurement function is F(t) = N1(t) + [N2(t) - N1(t)] * L1 / (L1 + L2);
[0191] Where F(t) is the temperature of the crystal, N1(t) and N2(t) are the temperatures of the thermistor, L1 is the distance between the crystal and the thermistor N1, L2 is the distance between the crystal and the thermistor N2, and t is time.
[0192] In some possible embodiments, the second determining unit 1302 is used to: determine the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal.
[0193] If the crystal is located between three thermistors on the PCB, then the first temperature measurement function is F(t,x,y)=-(D / C)-(B / C)*y-(A / C)*x.
[0194] A=(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t)),
[0195] B=(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t)),
[0196] C=(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t)),
[0197] D = -(A*X1 + B*Y1 + C*N1(t));
[0198] Where F(t) is the temperature of the crystal, t is the time, X1, X2, X3 are the abscissas of the thermistor, and Y1, Y2, Y3 are the ordinates of the thermistor.
[0199] IV. Another type of terminal
[0200] 1) Description
[0201] The following describes a terminal according to an embodiment of this application. Please refer to... Figure 14 , Figure 14 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application. The terminal 1400 includes a processor 1410, a memory 1420, and at least one communication bus for connecting the processor 1410 and the memory 1420.
[0202] In some possible implementations, processor 1410 may be one or more central processing units (CPUs). If processor 1410 is a CPU, the CPU may be a single-core CPU or a multi-core CPU. Memory 1420 includes, but is not limited to, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM), or compact disc read-only memory (CD-ROM), and memory 1420 is used to store computer programs or instructions 1421.
[0203] In some possible implementations, terminal 1400 also includes a communication interface for receiving and sending data.
[0204] In some possible implementations, the processor 1410 in terminal 1400 is used to execute a computer program or instruction 1421 stored in memory 1420 to perform the following steps:
[0205] Determine the temperature profile of the crystal, which is used to characterize the frequency shift of the crystal at different temperatures;
[0206] Based on the PCB layout relationship between the thermistor and the crystal, the first temperature measurement function of the crystal is determined. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal.
[0207] Determine the temperature offset, which is used to characterize the offset between the crystal temperature and the crystal temperature obtained through the first temperature measurement function during the registration process of the terminal 1400 network.
[0208] Determine the temperature hysteresis, which is used to characterize the time difference corresponding to the temperature difference of different temperature curves of a crystal at the same frequency deviation;
[0209] The first temperature measurement function is corrected based on the temperature offset and temperature hysteresis to obtain the second temperature measurement function;
[0210] The current temperature of the crystal is determined based on the temperature of the thermistor and the second temperature measurement function.
[0211] As can be seen, the terminal 1400 provided in this application embodiment can determine the temperature profile of the crystal. The temperature profile is used to characterize the frequency offset of the crystal at different temperatures. Based on the PCB layout relationship between the thermistor and the crystal, a first temperature measurement function of the crystal is determined. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal. A temperature offset is determined, which is used to characterize the offset between the temperature of the crystal and the temperature of the crystal obtained through the first temperature measurement function during the registration process of the terminal 1400 with the network. A temperature hysteresis is determined, which is used to characterize the temperature difference between different temperature profiles of the crystal at the same frequency offset. The corresponding time difference is used to correct the first temperature measurement function based on the temperature offset and temperature hysteresis, resulting in a second temperature measurement function. The current temperature of the crystal is then determined based on the temperature of the thermistor and the second temperature measurement function. Thus, for crystals without built-in thermistors, their corresponding temperature profiles can be determined, and the temperature measurement function can be determined based on the PCB layout relationship between the thermistor and the crystal. Determining the current temperature of the crystal through the temperature measurement function helps ensure the accuracy of the acquired current temperature, thereby helping the terminal 1400 accurately calculate the corresponding frequency offset based on the temperature profile and the current temperature of the crystal, thus improving the efficiency of the terminal 1400's network injection.
[0212] It should be noted that the specific implementation of each operation performed by terminal 1400 can be found in the corresponding description of the method embodiment shown above, and will not be repeated here.
[0213] 2) Other possible implementation methods
[0214] In some possible embodiments, in determining the temperature offset, the processor 1410 in terminal 1400 is used to execute a computer program or instructions 1421 stored in memory 1420 to perform the following steps:
[0215] During the registration process of the terminal 1400 with the network, the first frequency offset corresponding to the first AFC value is obtained. The first AFC value represents the AFC value required for the signal energy of the downlink reference signal demodulated by the terminal 1400 to reach the peak value.
[0216] Based on the first frequency offset and temperature curve, the first temperature value of the crystal is determined. The first temperature value characterizes the temperature of the crystal during the registration process of the terminal 1400 network.
[0217] The second temperature value of the crystal is determined based on the temperature of the thermistor and the first temperature measurement function;
[0218] The difference between the first temperature value and the second temperature value is used as the temperature offset.
[0219] In some possible embodiments, in determining the amount of temperature hysteresis, the processor 1410 in terminal 1400 is used to execute a computer program or instructions 1421 stored in memory 1420 to perform the following steps:
[0220] When the terminal 1400 is placed in the temperature control chamber, the temperature of the temperature control chamber is adjusted to obtain the target temperature curve of the crystal.
[0221] Calculate the temperature difference between the target temperature curve and the crystal temperature curve when the frequency deviation is a preset value;
[0222] The time difference corresponding to the temperature difference is used as the temperature hysteresis.
[0223] In some possible embodiments, the PCB layout relationship between the thermistor and the crystal includes:
[0224] The crystal and thermistor are symmetrically distributed on both sides of the PCB; or,
[0225] The crystal is located on the PCB between two thermistors; or,
[0226] The crystal is located on the PCB between three or more thermistors.
[0227] In some possible embodiments, in determining the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal, the processor 1410 in the terminal 1400 is used to execute the computer program or instructions 1421 stored in the memory 1420 to perform the following steps:
[0228] If the crystal and the thermistor are symmetrically distributed on both sides of the PCB, then the first temperature measurement function is F(t) = N(t);
[0229] Where F(t) is the temperature of the crystal, N(t) is the temperature of the thermistor, and t is time.
[0230] In some possible embodiments, in determining the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal, the processor 1410 in the terminal 1400 is used to execute the computer program or instructions 1421 stored in the memory 1420 to perform the following steps:
[0231] If the crystal is located between two thermistors on the PCB, then the first temperature measurement function is F(t) = N1(t) + [N2(t) - N1(t)] * L1 / (L1 + L2);
[0232] Where F(t) is the temperature of the crystal, N1(t) and N2(t) are the temperatures of the thermistor, L1 is the distance between the crystal and the thermistor N1, L2 is the distance between the crystal and the thermistor N2, and t is time.
[0233] In some possible embodiments, in determining the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal, the processor 1410 in the terminal 1400 is used to execute the computer program or instructions 1421 stored in the memory 1420 to perform the following steps:
[0234] If the crystal is located between three thermistors on the PCB, then the first temperature measurement function is F(t,x,y)=-(D / C)-(B / C)*y-(A / C)*x.
[0235] A=(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t)),
[0236] B=(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t)),
[0237] C=(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t)),
[0238] D = -(A*X1 + B*Y1 + C*N1(t));
[0239] Where F(t) is the temperature of the crystal, t is the time, X1, X2, X3 are the abscissas of the thermistor, and Y1, Y2, Y3 are the ordinates of the thermistor.
[0240] V. Other Exemplary Descriptions
[0241] This application also provides a computer storage medium storing a computer program for electronic data interchange, which causes a computer to perform some or all of the steps of any of the methods described in the above method embodiments.
[0242] This application also provides a computer program product, which includes a computer program operable to cause a computer to perform some or all of the steps of any of the methods described in the above method embodiments. The computer program product should be understood as a software product that primarily implements its solution through a computer program.
[0243] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.
[0244] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.
[0245] In the several embodiments provided in this application, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of the units described above is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical or other forms.
[0246] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0247] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0248] If the integrated units described above are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage device (CMD). Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned memory includes various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.
[0249] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, which may include: flash drive, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.
[0250] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A method for determining the temperature of a crystal, characterized in that, The device is applied to a terminal, which includes a temperature detection circuit and a crystal. The crystal has no built-in thermistor, and the temperature detection circuit includes a thermistor. The temperature detection circuit is used to determine the temperature of the thermistor. The method includes: Determine the temperature profile of the crystal, which is used to characterize the frequency shift of the crystal at different temperatures; Based on the printed circuit board (PCB) layout relationship between the thermistor and the crystal, a first temperature measurement function of the crystal is determined. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal. Determine a temperature offset, which is used to characterize the offset between the temperature of the crystal during the terminal registration network process and the temperature of the crystal obtained by the first temperature measurement function; Determine the temperature hysteresis, which is used to characterize the time difference corresponding to the temperature difference of different temperature curves of the crystal at the same frequency deviation; The first temperature measurement function is corrected based on the temperature offset and the temperature hysteresis to obtain the second temperature measurement function; The current temperature of the crystal is determined based on the temperature of the thermistor and the second temperature measurement function.
2. The method according to claim 1, characterized in that, The determination of the temperature offset includes: During the process of the terminal registering with the network, the first frequency offset corresponding to the first AFC value is obtained. The first AFC value represents the AFC value required for the signal energy of the downlink reference signal demodulated by the terminal to reach its peak value. Based on the first frequency offset and the temperature curve, a first temperature value of the crystal is determined, wherein the first temperature value characterizes the temperature of the crystal during the terminal registration process. The second temperature value of the crystal is determined based on the temperature of the thermistor and the first temperature measurement function; The difference between the first temperature value and the second temperature value is used as the temperature offset.
3. The method according to claim 1, characterized in that, The determination of the temperature hysteresis includes: The terminal is placed in a temperature control chamber, and the temperature of the temperature control chamber is adjusted to obtain the target temperature curve of the crystal. Calculate the temperature difference between the target temperature curve and the temperature curve of the crystal when the frequency deviation is a preset value; The time difference corresponding to the temperature difference is used as the temperature hysteresis.
4. The method according to claim 1, characterized in that, The PCB layout relationship between the thermistor and the crystal includes: The crystal and the thermistor are symmetrically distributed on both sides of the PCB; or, The crystal is located on the PCB between the two thermistors; or, The crystal is located on the PCB between three or more of the thermistor elements.
5. The method according to claim 4, characterized in that, The step of determining the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal includes: If the crystal and the thermistor are symmetrically distributed on the front and back sides of the PCB, then the first temperature measurement function is F(t) = N(t); Where F(t) is the temperature of the crystal, N(t) is the temperature of the thermistor, and t is time.
6. The method according to claim 4, characterized in that, The step of determining the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal includes: If the crystal is located between the two thermistors on the PCB, then the first temperature measurement function is F(t) = N1(t) + [N2(t) - N1(t)] * L1 / (L1 + L2); Where F(t) is the temperature of the crystal, N1(t) is the temperature of the first thermistor of the two thermistors, N2(t) is the temperature of the second thermistor of the two thermistors, L1 is the distance between the crystal and the first thermistor on the PCB, L2 is the distance between the crystal and the second thermistor on the PCB, and t is time.
7. The method according to claim 4, characterized in that, The step of determining the first temperature measurement function of the crystal based on the PCB layout relationship between the thermistor and the crystal includes: If the crystal is located between the three thermistor elements on the PCB, then the first temperature measurement function is F(t,x,y)=-(D / C)-(B / C)*y-(A / C)*x. A=(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t)), B=(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t)), C=(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t)), D = -(A*X1 + B*Y1 + C*N1(t)); Where F(t) is the temperature of the crystal, t is time, X1 is the abscissa of the third thermistor among the three thermistors, X2 is the abscissa of the fourth thermistor among the three thermistors, X3 is the abscissa of the fifth thermistor among the three thermistors, Y1 is the ordinate of the third thermistor, Y2 is the ordinate of the fourth thermistor, and Y3 is the ordinate of the fifth thermistor.
8. A device for determining the temperature of a crystal, characterized in that, The device is applied to a terminal, which includes a temperature detection circuit and a crystal. The crystal has no built-in thermistor, and the temperature detection circuit includes a thermistor. The temperature detection circuit is used to determine the temperature of the thermistor. The device includes: The first determining unit is used to determine the temperature curve of the crystal, which is used to characterize the frequency deviation of the crystal at different temperatures. The second determining unit is used to determine a first temperature measurement function of the crystal based on the printed circuit board (PCB) layout relationship between the thermistor and the crystal. The first temperature measurement function is used to indicate the correspondence between the temperature of the thermistor and the temperature of the crystal. The third determining unit is used to determine the temperature offset, which is used to characterize the offset between the temperature of the crystal and the temperature of the crystal obtained by the first temperature measurement function during the terminal registration network process. The fourth determining unit is used to determine the temperature hysteresis, which is used to characterize the time difference corresponding to the temperature difference of different temperature curves of the crystal under the same frequency deviation. The correction unit is used to correct the first temperature measurement function according to the temperature offset and the temperature hysteresis to obtain the second temperature measurement function; A temperature determination unit is used to determine the current temperature of the crystal based on the temperature of the thermistor and the second temperature measurement function.
9. A terminal, comprising a processor, a memory, and a computer program or instructions stored in the memory, characterized in that, The processor executes the computer program or instructions to implement the steps of the method according to any one of claims 1-7.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program or instructions that, when executed by a processor, implement the steps of the method according to any one of claims 1-7.