Atomic object confinement apparatus with radio frequency electrode shaping for periodic boundary conditions

Abstract

Atomic object confinement devices including RF bus and systems including atomic object confinement devices including RF bus are provided. An exemplary atomic object confinement device includes RF rail electrodes and an RF bus electrode. The RF rail electrodes form a periodic array of confinement segments within a central region of the atomic object confinement device, and the RF bus electrode is disposed in a peripheral region disposed about the central region. The RF rail electrodes and the RF bus electrode are configured to produce an array of substantially periodic trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Application No. 63 / 265,211, filed December 10, 2021, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Various embodiments relate to multidimensional atomic object confinement devices. For example, various embodiments relate to two-dimensional atomic object confinement devices with periodic arrays of trapping regions. For example, various embodiments relate to quantum computers including multidimensional atomic object confinement devices. Background Technology

[0004] A quantum charge-coupled device (QCCD) structure is an architecture capable of being used for large-scale quantum computing. According to the QCCD architecture, multiple atomic objects are constrained by an atomic object confinement device, and the controlled evolution of the quantum states of the atomic objects is used to perform quantum computation. In various cases, the atomic object confinement device can include a periodic array of trapping regions. For example, a periodic array of trapping regions can enable the parallelization of various operations such as transport, cooling, or qubit gating. However, the edges of the array cause perturbations in the electric and / or magnetic fields within the atomic object confinement device.

[0005] These perturbations can cause periodic disturbances in the position of atomic objects constrained between cells of a periodic array, thereby affecting the accuracy of operations performed using lasers or any other applied field (such as electrode voltage, microwave, or magnetic field) shared or distributed (i.e., broadcast) across multiple cells of the array, intended to be performed simultaneously in multiple cells. These perturbations also cause variations in the frequency of motion of atomic objects in different cells of the periodic array, similarly affecting the accuracy of broadcast operations. Through effort, ingenuity, and innovation, many shortcomings of existing atomic object constraint devices and systems incorporating such devices have thus been overcome by developing solutions constructed according to embodiments of the invention, several examples of which are described in detail herein. Summary of the Invention

[0006] Example embodiments provide multidimensional atomic object constraint devices and / or systems consisting of multidimensional atomic object constraint devices formed by a substantially periodic array of one-dimensional constraint segments connected by junctions. In various embodiments, the one-dimensional constraint segments of the substantially periodic array, also referred to herein as legs, are located in the central region of the atomic object constraint device. The substantially periodic array is at least partially defined by a plurality of radio frequency (RF) rail electrodes. When an oscillating voltage signal (e.g., an RF oscillating voltage signal) is applied to the RF rail electrodes, the RF rail electrodes generate a trapping pseudopotential in the form of an array of linear trapping regions and junctions within the central region of the atomic object constraint device. Due to the finite length of the RF rail electrodes and / or the presence of edges, the trapping pseudopotential within the central region of the atomic object constraint device comprises periodic perturbations to the trapping pseudopotential and / or the array of trapping regions.

[0007] In addition to the RF rail electrodes, various embodiments also include one or more RF bus electrodes. These one or more RF bus electrodes are disposed at least partially around the periphery of the central region of the atomic object confinement device. For example, in various embodiments, the RF bus electrodes are disposed in the peripheral region surrounding the central region of the atomic object confinement device. The RF bus electrodes are configured such that when an oscillating voltage signal is applied to one or more RF bus electrodes (in addition to the oscillating voltage signal applied to the one or more RF rail electrodes), periodic perturbations to the array of capture regions formed by capture pseudopotentials within the central region of the atomic object confinement device are reduced and / or mitigated. For example, in various embodiments, the RF bus electrodes are configured such that when an oscillating voltage signal is applied to one or more RF bus electrodes, the array of capture regions and / or capture pseudopotentials within the central region of the atomic object confinement device are substantially periodic.

[0008] In various embodiments, the captured pseudopotential is used to constrain one or more atomic objects (e.g., constrained within individual capture regions of an array of capture regions) by an atomic object confinement device. In example embodiments, the atomic object confinement device is an ion trap, such as a surface ion trap, a Paul trap, and / or the like. In example embodiments, the atomic object is an ion, an atom, a multi-ionic or multi-atomic group or crystal, a neutral or ionic molecule, and / or the like. In example embodiments, the atomic object confinement device is part of a quantum processor and / or a quantum computer, and one or more atomic objects constrained by the atomic object confinement device are used as qubits in the quantum processor and / or quantum computer.

[0009] According to a first aspect, an atomic object constraint device is provided. In an example embodiment, the atomic object constraint device includes a plurality of electrodes. The plurality of electrodes includes a plurality of RF rail electrodes. The plurality of RF rail electrodes are configured to at least partially define a periodic array of constraint segments. The plurality of RF rail electrodes are configured such that when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes generate a pseudopotential in the form of an array of trapping regions, the array of trapping regions being configured to contain at least one atomic object within a respective trapping region of the array of trapping regions. The plurality of electrodes also includes one or more RF bus electrodes disposed around at least a portion of a peripheral region of the atomic object constraint device. The one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the one or more RF bus electrodes cause the array of trapping regions to be substantially periodic.

[0010] In an example embodiment, a plurality of RF rail electrodes are arranged in a periodic manner, wherein the periodic arrangement is at least partially defined by tiling units.

[0011] In an example embodiment, a portion of one or more RF bus electrodes includes one or more peripheral units, which are at least partial copies of the tiled units disposed in the peripheral region.

[0012] In an example embodiment, one or more RF bus electrodes comprise a continuous electrode that extends substantially along at least one edge of the peripheral region.

[0013] In the example embodiment, the continuous electrode is substantially rectangular in shape.

[0014] In an example embodiment, the continuous electrode includes electrode portions, each electrode portion extending along a corresponding edge of the peripheral region.

[0015] In the example embodiment, each electrode portion is one of (a) a basic rectangle or (b) a gradient edge.

[0016] In an example embodiment, at least one electrode portion has a width that varies along the length of at least one electrode portion.

[0017] In an example embodiment, at least one electrode portion is narrowest at the middle of the at least one electrode portion.

[0018] In an example embodiment, one or more RF bus electrodes include one or more corner features, each corner feature being disposed at a corresponding corner of the peripheral region.

[0019] In the example embodiment, one or more RF bus electrodes include multiple different RF bus electrodes.

[0020] In the example embodiment, each of the multiple different RF bus electrodes extends from a corresponding end of one or a pair of corresponding RF rail electrodes.

[0021] According to another aspect, an atomic object constraint device is provided. In an example embodiment, the atomic object constraint device includes one or more RF rail electrodes and one or more RF bus electrodes. At least a subset of the one or more RF rail electrodes is disposed in a central region of the atomic object constraint device, and the RF bus electrodes are disposed around a peripheral region of the atomic object constraint device. The peripheral region surrounds the central region. The one or more RF rail electrodes and one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied to the one or more RF rail electrodes and one or more RF bus electrodes, the one or more RF rail electrodes and one or more RF bus electrodes generate a periodic array of capture regions in at least a portion of the central region of the atomic object constraint device.

[0022] According to another aspect, a quantum computer is provided. In an exemplary embodiment, the quantum computer includes an atom object confinement device. In an exemplary embodiment, the atom object confinement device includes a plurality of electrodes. The plurality of electrodes includes a plurality of RF rail electrodes. The plurality of RF rail electrodes are configured to at least partially define a periodic array of confinement segments. The plurality of RF rail electrodes are configured such that when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes generate an array of trapping regions, the array of trapping regions being configured to contain at least one atom object within a respective trapping region of the array of trapping regions. The plurality of electrodes also include one or more RF bus electrodes disposed around at least a portion of a peripheral region of the atom object confinement device. The one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the one or more RF bus electrodes cause the array of trapping regions to be substantially periodic.

[0023] In an example embodiment, the quantum computer also includes a controller; and a voltage source, wherein the controller is configured to cause the voltage source to generate the oscillating voltage signal.

[0024] In an example embodiment, the quantum computer further includes a manipulation source; and one or more optical elements configured to guide manipulation signals generated by the manipulation source such that the manipulation signals are incident on two or more locations within a substantially periodic array of the capture region, the two or more locations being corresponding identical points within a period of the substantially periodic array of the capture region.

[0025] In an example embodiment, the atomic object constraint device is configured to constrain two or more atomic objects, and the manipulation signal is configured to perform an operation on at least two of the two or more atomic objects, wherein each of the at least two atomic objects is located at a corresponding position of the two or more positions when the manipulation signal is incident on the two or more positions.

[0026] In an example embodiment, a plurality of RF rail electrodes are arranged in a periodic arrangement, wherein the periodic arrangement is at least partially defined by tiled units, and a portion of one or more RF bus electrodes includes one or more peripheral units, which are at least partial copies of the tiled units disposed in the peripheral region.

[0027] In an example embodiment, one or more RF bus electrodes comprise a continuous electrode that extends substantially along at least one edge of the peripheral region.

[0028] In the example embodiment, one or more RF bus electrodes include multiple different RF bus electrodes. Attached Figure Description

[0029] Therefore, the invention has been described in general terms, and reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, and in which:

[0030] Figure 1 An exemplary atomic object constraint device according to an example embodiment is shown;

[0031] Figure 1A yes Figure 1 A detailed view of a portion of the exemplary atomic object constraint device shown;

[0032] Figure 1B The changes in constraint caused by the capture pseudopotential are shown at specific locations within an atomic object constraint device without an RF bus and at specific locations within an atomic object constraint device in an example embodiment including an RF bus.

[0033] Figure 2 Another exemplary atomic object constraint device according to an example embodiment is shown;

[0034] Figure 3 An exemplary atomic object constraint device according to an example embodiment is shown;

[0035] Figure 4 Another exemplary atomic object constraint device according to an example embodiment is shown;

[0036] Figure 5 This is a schematic diagram illustrating an exemplary quantum computing system according to various embodiments;

[0037] Figure 6 Schematic diagrams of exemplary controllers for quantum computers according to various embodiments are provided; and

[0038] Figure 7 A schematic diagram of an example computing entity of a quantum computer system that can be used according to an example embodiment is provided. Detailed Implementation

[0039] The invention will now be described more fully below with reference to the accompanying drawings, which illustrate some, but not all, exemplary embodiments. In fact, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to enable the disclosure to meet applicable legal requirements. Unless otherwise stated, the term “or” (also denoted as “ / ”) is used herein in a meaning that is both alternative and combined. The terms “illustrative” and “exemplary” are used as examples only and do not indicate a level of quality. Unless otherwise stated, the terms “generally,” “substantially,” and “about” mean within engineering and / or manufacturing limitations and / or within the user’s measurement capabilities. The same reference numerals always refer to the same elements.

[0040] In various embodiments, a multidimensional (e.g., two-dimensional) atomic object constraint device is provided. The multidimensional atomic object constraint device includes a plurality of electrodes. In various embodiments, the plurality of electrodes includes a plurality of RF rail electrodes. The plurality of RF rail electrodes at least partially define a periodic array of one-dimensional constraint segments (also referred to herein as legs). In various embodiments, the periodic array of one-dimensional constraint segments is substantially disposed within a central region of the atomic object constraint device. For example, substantially all and / or most of the periodic array of constraint segments is disposed within the central region, while a smaller portion of the periodic array of constraint segments may be disposed within a peripheral region of the atomic object constraint device. The one-dimensional constraint segments are connected by joints such that an atomic object constrained by the atomic object constraint device can be transferred between corresponding one-dimensional constraint segments via respective joints. Each of the one-dimensional constraint segments in the periodic array of one-dimensional constraint segments is configured to capture an atomic object in a substantially one-dimensional capture region. The substantially one-dimensional capture region is generated and / or formed by applying an (RF) oscillating voltage signal to (at least partially) the RF rail electrodes defining the periodic array of constraint segments. Specifically, applying an oscillating voltage signal to the RF rail electrodes results in the generation of a trapping pseudopotential, which is configured to confine atomic objects within a periodic array of confinement segments.

[0041] Because the periodic array of the constraint segments is finite and / or has edges, the effects caused by the edges of the periodic array of the constraint segments result in periodic perturbations of the trapping pseudopotential in the central region of the atomic object constraint device. In other words, due to perturbations caused by array edge effects, the array of trapping regions is typically quasi-periodic rather than substantially periodic in the central region. These perturbations reduce the ability of the topology of the array based on the trapping regions to perform parallelization of operations with high fidelity and efficiency. For example, perturbations affect the periodicity of the electric and / or magnetic fields passing through the atomic object constraint device. These perturbations can cause the position of the atomic object constrained in the periodic array to change from one cell to another, thus affecting the accuracy of laser alignment and broadcast DC signals. These perturbations can also cause changes in the motion frequency of the atomic object in different cells of the periodic array, thus affecting the accuracy of operations performed using broadcast lasers or any other applied field (e.g., microwaves or magnetic fields). Therefore, there is a technical problem regarding how to mitigate the effects of array edges on the operation of atomic object constraint devices.

[0042] Various embodiments provide technical solutions to these technical problems. For example, in various embodiments, the atomic object constraint device includes an RF bus configured to mitigate array edge effects when an oscillating (RF) voltage signal is applied thereto, such that the array of capture regions within the central region of the atomic object constraint device is substantially periodic. For example, in various embodiments, in addition to RF rail electrodes, the plurality of electrodes of the atomic object constraint device also include one or more RF bus electrodes. In various embodiments, one or more RF bus electrodes are disposed in a peripheral region surrounding the central region (which typically includes and / or contains a periodic array of constraint segments). The RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the capture pseudopotential within the central portion of the atomic object constraint device is substantially periodic. For example, the RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, periodic perturbations to the periodic array of capture regions are reduced and / or mitigated. For example, the electric and / or magnetic fields generated by applying the oscillating voltage signal to one or more RF bus electrodes cancel, reduce, and / or mitigate at least a portion of the edge effect perturbations affecting the central portion of the atomic object constraint device and caused by the finite size of the periodic array of constraint segments. Therefore, various embodiments provide technological improvements to the field of atomic object confinement devices, quantum processors, quantum computers and / or the like.

[0043] Furthermore, various embodiments provide systems including multidimensional atom object confinement devices. For example, various embodiments provide quantum processors or quantum computers that include multidimensional atom object confinement devices comprising a plurality of RF rail electrodes and one or more RF bus electrodes, these electrodes being configured to generate a substantially periodic trapping pseudopotential and / or a substantially periodic array of trapping regions within a central region of the atom object confinement device. For example, to reduce the runtime of quantum circuits, the system may be a quantum processor configured to perform parallel operations, enabling deeper quantum circuits to be implemented within the coherence time of the quantum processor's qubits (e.g., quantum bits).

[0044] In various embodiments, a trapping pseudopotential is used to constrain one or more atomic objects by an atomic object confinement device. For example, the trapping pseudopotential may form a substantially periodic array of trapping regions within a central region, such that atomic objects can be confined within the respective trapping regions of this substantially periodic array. In exemplary embodiments, the atomic object confinement device is an ion trap, such as a surface ion trap, a Paul trap, and / or the like. In exemplary embodiments, the atomic objects are ions, atoms, multi-ionic or multi-atomic groups or crystals, neutral or ionic molecules, neutral or ionic molecular groups, and / or the like. In exemplary embodiments, the atomic object confinement device is part of a quantum processor and / or a quantum computer, and one or more atomic objects constrained by the atomic object confinement device are used as qubits in the quantum processor and / or quantum computer.

[0045] Figure 1 An example embodiment of an atomic object constraint device 100 is illustrated. In various embodiments, the atomic object constraint device 100 includes a plurality of electrodes. The plurality of electrodes includes RF rail electrodes 122 and RF bus electrodes 112. For example, the atomic object constraint device 100 includes a central region 120, which includes a plurality of RF rail electrodes 122. The plurality of RF rail electrodes 122 at least partially define a periodic array of constraint segments 132. For example, the atomic object constraint device 100 includes RF bus electrodes 112 disposed within a peripheral region 116 of the atomic object constraint device 100. The peripheral region 116 is disposed around the central region 120 (e.g., around the periphery of the central region 120). In various embodiments, the atomic object constraint device 100 is configured such that atomic objects can be captured and / or constrained (e.g., within their respective capture regions), and / or operations and / or functions can be performed on atomic objects located within the central region of the atomic object constraint device 100. However, atomic objects are often not captured and / or constrained within the peripheral region 116 of the atomic object constraint device 100.

[0046] As described above, the plurality of RF rail electrodes 122 at least partially define a periodic array of constraint segments 132. Figure 1A It shows Figure 1 Detailed view of box 150. (See attached image.) Figure 1A As shown, in various embodiments, the plurality of electrodes of the atomic object constraint device 100 further include a sequence and / or series 154 (e.g., 154A, 154B, 154C) of capture and / or transfer (TT) electrodes 156 (e.g., 156A, 156B, 156C, 156D). When an oscillating (RF) voltage signal is applied to the RF rail electrode 122, a capture pseudopotential is generated, which is configured to capture and / or constrain the atomic object within a one-dimensional capture region 130 of an array of capture regions. The one-dimensional capture region includes an RF zero. The RF zero is a one-dimensional path defined by the direction of the weakest pseudopotential gradient. At some points along the RF zero, the pseudopotential is substantially equal to zero. Therefore, the RF zero produces a stable one-dimensional capture region 130. The capture region of the atomic object constraint device is substantially defined by the corresponding RF zero. For example, the RF bus zeros along the one-dimensional capture region 130 define the transmission path along the capture region, and the atomic object can be transmitted along the length of the capture region along this transmission path.

[0047] Specifically, the sequence and / or series 154 of RF rail electrodes 122 and TT electrodes 156 form a periodic array (e.g., within the central region 120) of the constraint segments 132 or legs of the atomic object constraint device 100. When an oscillating voltage signal is applied to the RF rail electrodes 122, an array of trapping regions 130 is generated. For example, the atomic object can be stabilized at various positions within the array of trapping regions 130 at a specific distance (e.g., approximately 20 μm to approximately 200 μm) above the upper surface of the atomic object constraint device 100 (e.g., the coplanar upper surfaces of the TT electrodes 154 and RF rail electrodes 122). In other words, the sequence and / or series 154 of RF rail electrodes 122 and TT electrodes defines and / or forms a physical and / or tangible periodic array of constraint segments, and applying an oscillating voltage to the RF rail electrodes 122 results in the formation and / or generation of a trapping pseudopotential in the form of an array of trapping regions.

[0048] In various embodiments, the TT electrode 156 is configured to generate a potential well that causes an atomic object to travel along a corresponding one-dimensional trapping region 130 and / or holds the atomic object at a corresponding selected position along the one-dimensional trapping region 120. In various embodiments, each of the RF rail electrodes 122 defines a respective longitudinal axis 124 (e.g., 124A, 124B). In various embodiments, each sequence and / or series 154 of the TT electrodes 156 extends substantially parallel to the corresponding longitudinal axis 124 of the corresponding RF rail electrode 122, extending at least a portion of the length of the sequence and / or series of TT electrodes and / or RF rail electrodes. Each sequence and / or series 154 of the TT electrodes 156 includes a plurality of TT electrodes. The TT electrodes may have various widths (e.g., in the direction defined by the corresponding longitudinal axis 124 of the corresponding RF rail electrode 122) and / or shapes. For example, TT electrode 156D is narrower than TT electrode 156C in the direction defined by the corresponding longitudinal axis 124A. In an example embodiment, each leg and / or constraint segment includes two RF rail electrodes 122A, 122B and three sequences and / or series 154A, 154B, 154C of TT electrodes 156. For example, a first sequence and / or series 154A may be disposed at least partially along the outer edge of the first RF rail electrode 122A, a second sequence and / or series 154B of TT electrodes 156 may be disposed between the first RF rail electrode 122A and the second RF rail electrode 122B, and a third sequence and / or series 154C of TT electrodes 156 may be disposed at least partially along the outer edge of the second RF rail electrode 122B. In various embodiments, each of the TT electrodes 156 is formed by a substantially coplanar upper surface that is substantially coplanar with the upper surface of the RF rail electrode 122.

[0049] In various embodiments, the TT electrode 154 is configured to have a control voltage signal applied thereto, causing the TT electrode 154 to generate a time-varying potential field that causes the atomic object to propagate along a transmission path (e.g., along the RF zero) of the trapping region 130. Furthermore, the control voltage signal applied to the TT electrode 156 can cause the atomic object confined and / or trapped within the trapping region 130 to traverse a trajectory that substantially follows and / or follows the RF zero. In various embodiments, the control voltage signal applied to the TT electrode 156 has a slower respective time evolution compared to the time evolution of the (RF) oscillating voltage signal applied to the RF rail electrode 122 (and the RF bus electrode 112) (possibly at least in part due to the use of a low-pass filter). In example embodiments, the term "slow" means that the highest frequency Fourier component with substantially non-zero amplitude is slower than the frequency of the (RF) oscillating voltage signal applied to the RF rail electrode 122 (and the RF bus electrode 112).

[0050] In various embodiments, the sequence and / or series 154 of TT electrodes 156 are organized and / or configured into regions and / or areas 160 (e.g., 160A, 160B, 160C). The various electrodes 156 may have various sizes and / or shapes. For example, electrode 156D is narrower than electrode 156C in a direction substantially parallel to the adjacent RF rail electrode 122.

[0051] Back Figure 1 The RF guide electrode 122 at least partially defines a periodic array of constraint segments within at least the central region 120 of the atomic object constraint device 100. In various embodiments, the periodic array of constraint segments 132 is formed and / or generated by the periodic repetition of tiling cells 135. For example, at least the central region 120 of the atomic object constraint device 100 may be tiled by copies of tiling cells 135. For example, the atomic object constraint device 100 may include tessellation of tiling cells 135 at least within the central region 120.

[0052] exist Figure 1 , Figure 2 , Figure 3 and Figure 4 In the illustrated embodiment, the tiling unit 135 is formed by a joint having four one-dimensional constraint segments that extend from the joint at an angle θ between rotationally adjacent 90-degree constraint segments. In various embodiments, the tiling unit 135 can be formed by any number of constraint segments with different angles θ between rotationally adjacent constraint segments, depending on the application. For example, in an exemplary embodiment, a periodic arrangement of copies of the tiling unit 135 can form a periodic array of constraint segments 132 of rectangular and / or square, triangular, hexagonal, and / or other shapes.

[0053] Due to various physical constraints (e.g., chip size, cryostat, and vacuum chamber size), the size of the atomic object confinement device 100 is not infinite, and the periodic array of confinement segments 132 does not extend infinitely. Array edge effects caused by the edges and / or terminations of the periodic array of confinement segments result in perturbations that affect the periodicity of the array of trapping pseudopotentials and / or trapping regions within the central region 120 of the atomic object confinement device 100. These perturbations can cause changes in the address of the atomic object confinement within the periodic array from one cell to another, thereby affecting the alignment of the laser and the accuracy of broadcast DC signals. These perturbations can also cause changes in the motion frequency of the atomic object in different cells of the periodic array, thereby affecting the accuracy of operations performed using a broadcast laser or any other applied field (e.g., microwaves or magnetic field gradients).

[0054] Therefore, the array edge effect caused by the finite size of the periodic array of constraint segments reduces the fidelity of parallelized operations on atomic objects constrained by atomic object constraint devices, and / or significantly increases the technical complexity required to achieve parallelized operations (with sufficiently high fidelity). For example, Figure 1 An example beam path 170 is shown, which is an example path along which a manipulation signal (e.g., a laser beam) can propagate through the atomic object confinement device 100. Positions 172A and 172B are located at the same point in the phase of the periodic array of the confinement segments and / or at corresponding points in the period of the periodic array of the confinement segments. In order for the manipulation signal propagating along the beam path 170 to effectively perform parallel operations on the atomic objects located at positions 172A and 172B, respectively, it is desirable to capture substantially the same pseudopotential at positions 172A and 172B. Since positions 172A and 172B are located at the same point in the periodic phase of the periodic array of the confinement segment 132, it can be expected or assumed that positions 172A and 172B are located at the same point in the phase of the periodic phase of the array of the capture region 130. However, the perturbation caused by the array edge effect of the periodic array of constraint segment 132 results in a difference in the capture pseudopotential at positions 172A and 172B, which is significant enough to negatively affect the fidelity of the parallel operation being performed.

[0055] Various embodiments of the atomic object constraint device 100 include an RF bus 110 disposed in a peripheral region 116. The peripheral region 116 is disposed around the periphery of the central region 120 of the atomic object constraint device 100. Figure 1In the diagram, the peripheral region 116 is shown as the area between dashed rectangles. In various embodiments, the RF bus 110 includes at least one RF bus electrode 112. In various embodiments, the RF bus 110 includes one or more at least partial peripheral units 114 (referred to herein as (partial) peripheral units). For example, (partial) peripheral units 114 include RF rail electrodes 122 and possible TT electrodes 154, which are copies of corresponding portions of the tiled units 135. In example embodiments, (partial) peripheral units 114 do not include TT electrodes 154, or include a topology and / or geometry of TT electrodes different from those disposed in the central region 120 of the atomic object constraint device 100. However, (partial) peripheral units 114 are generally not used to perform operations on atomic objects. For example, the RF bus 110 of the atomic object constraint device 100 includes a row of (partial) peripheral units 114 adjacent to and / or adjacent to the RF bus electrodes 112. (Partial) peripheral units 114 maintain and / or have the same topology and / or geometry as the constraint segments 132 within the central region 120 of the atomic object constraint device 100. In various embodiments, the RF bus 110 may include rows / columns of one or more (partial) peripheral units and / or complete peripheral units, depending on the application.

[0056] In various embodiments, the RF bus electrode 112 is a continuous RF bus electrode. As used herein, the continuous RF bus electrode extends substantially along the length of one side or edge of the peripheral region 116 of the central region 120. For example, the length of the RF bus electrode 112 is substantially equal to (e.g., substantially not less than) the corresponding side or edge of the peripheral region 116. For example, one RF bus electrode 112 extends along one side or edge of the peripheral region 116.

[0057] exist Figure 1 In the illustrated embodiment, one or more RF bus electrodes 112 include two substantially rectangular RF bus electrodes 112, each RF bus electrode extending along a corresponding edge or side of the peripheral region 116 of the atomic object constraint device 100. For example, in the illustrated embodiment, the RF bus electrodes 112 extend opposite edges or sides of the peripheral region 116 of the atomic object constraint device 100 (e.g., given a given edge or side of the peripheral region 116 of the atomic object constraint device 100). Figure 1 The defined coordinates, using a constant x-value to define the length of the side. In one example, the additional RF bus electrode 112 extends beyond other relative edges or sides of the peripheral region 116 (e.g., given...). Figure 1 The defined coordinates (the length of the side defined by a constant y-value). In the example embodiment, a single RF bus electrode 112 is formed of a substantially rectangular component or electrode portion and extends around the entire peripheral region 116 and / or around the entire periphery of the central region 120.

[0058] In various embodiments, the RF bus 110 is configured such that when an oscillation signal is applied thereto (e.g., to the RF bus electrode 112 and RF rail electrode 122 of the (partial) peripheral unit 114), it reduces and / or mitigates the disturbance caused by the periodicity of the array of capture regions 130 due to array edge effects, such that the capture pseudopotential within the array of capture regions 130 and / or at least a portion of the central region 120 is substantially periodic.

[0059] Figure 1B The diagram illustrates the height variation at the corresponding center point 142 of the horizontal leg (and / or linear / 1D capture segment) 140 when an oscillating RF signal is supplied to the RF rail electrode 122 in the central region 120, but no oscillating RF signal is applied to the electrodes of the RF bus 110 (e.g., the RF rail electrode 122 and the RF bus electrode 112 located in the peripheral region 116). Figure 1B (a) and constraint changes (e.g., represented by the Laplace of the captured pseudopotential) Figure 1B (b). In other words, Figure 1B (a) and (b) respectively illustrate the height and constraint changes of the atomic object above the surface of the atomic object constraint device caused by the capture pseudopotential at the center point 142 of the horizontal leg 140 in an atomic object constraint device excluding the RF bus. Figure 1B As can be seen from (a) and 1B(b), the pseudopotential changes between the horizontal legs at 140 degrees are significant. For example, if we can see from... Figure 1B As seen in (b), the Laplace result for capturing the pseudopotential at point 172A is significantly different from that at point 172B.

[0060] Figure 1B (c) illustrates the height variation at the corresponding center point 142 of the horizontal leg (and / or linear / ID capture segment) 140 when an oscillating RF signal is provided to the RF rail electrode 122 in the central region 120 and applied to the RF bus 110 (e.g., the RF rail electrode 122 and RF bus electrode 112 in the peripheral region 116), while Figure 1B (d) illustrates the change in the constraint (represented by the Laplace of the captured pseudopotential). In other words, Figure 1B (c) and (d) respectively illustrate the height and constraint changes of the atomic object above the surface of the atomic object constraint device caused by the trapping pseudopotential at the center point 142 of the horizontal leg 140 in the atomic object constraint device 100 including the RF bus 110. Figure 1B As seen in (c) and 1B(d), the constraint changes throughout the capture region are very small, such as Figure 1 As shown. For example, if it is possible to obtain from Figure 1BAs seen in (d), the Laplace of the captured pseudopotential is significantly more consistent at points 172A and 172B (e.g., compared to when RF bus 110 is absent and / or not used, as...). Figure 1B (b) shown). It should be understood that various other metrics describe and can be used to quantify the improved periodicity of capturing pseudopotentials in the atomic object constraint device 100 including the RF bus 110, compared to the atomic object constraint device 100 excluding the RF bus 110.

[0061] Various embodiments provide atomic object constraint devices including RF buses of various types and / or shapes. Various embodiments provide systems including atomic object constraint devices including RF buses of various types and / or shapes. For example, in various embodiments, the number and / or portion of the rows and / or columns of (partial) peripheral cells included in the RF bus may vary. In various embodiments, the RF bus does not include any (partial) peripheral cells. In various embodiments, the RF bus includes one or more consecutive RF bus electrodes. In various embodiments, the RF bus includes multiple different and / or discrete RF bus electrodes. Reference will now be made to... Figure 2 , Figure 3 and Figure 4 Some additional example embodiments of the RF bus and atomic object constraint device including the RF bus are described.

[0062] Figure 2 An example embodiment of an atomic object constraint device 200 including an RF bus 210 comprising a plurality of different or discrete RF bus electrodes 212 is shown. In the illustrated embodiment, the atomic object constraint device 200 includes a plurality of electrodes. The plurality of electrodes includes a plurality of different or discrete RF bus electrodes 212, a plurality of RF rail electrodes 222, and a plurality of TT electrodes (similar to...). Figure 1A (As shown in the diagram). Some and / or most of the RF rail electrodes 222 are located within the central region 220 of the atomic object confinement device 200, and some RF rail electrodes 220 are located within a peripheral region 216 surrounding the central region 220 and form (partial) peripheral units 214. The peripheral region 216 is in Figure 2 The space shown is between two dashed rectangles. Within the central region 220 of the atomic object constraint device 200, RF rail electrodes 222 define a periodic array of one-dimensional constraint segments 232.

[0063] When an (RF) oscillation voltage signal is applied to the RF rail electrode 222, a two-dimensional array of one-dimensional capture regions 230 is generated within the central region 220. However, the periodicity of this array in the capture region 230 is substantially disturbed due to the array edge effect corresponding to the edge of the two-dimensional periodic array of the one-dimensional constraint segment 232. When an (RF) oscillation voltage signal is applied to both the RF rail electrode 222 and the RF bus 210 disposed in the central region 120 (e.g., the RF rail electrode 122 and the RF bus electrode 212 disposed in the peripheral region 216), a substantially periodic two-dimensional array of one-dimensional capture regions 230 is generated.

[0064] like Figure 2 As shown, in various embodiments, the RF bus electrodes 212 are different and / or discrete RF bus electrodes 212. The different and / or discrete RF bus electrodes 212 do not span the entire side or edge of the peripheral region 214 along the periphery or side and / or edge of the central region 220. For example, multiple different and / or discrete RF bus electrodes 212 may be spaced apart from each other along one or more sides or edges of the peripheral region 214. For example, in the illustrated embodiment, each different and / or discrete RF bus electrode 212 extends from a single pair of RF rail electrodes 222. In other words, in the illustrated embodiment, each different and / or discrete RF bus electrode 212 extends from a single constraint segment of the (partial) peripheral unit 214. In the example embodiment, the RF bus electrode 212 extends from one or more constraint segments of the corresponding (partial) peripheral unit 214. In an example embodiment, the RF bus electrode 212 extends from one or more constraint segments of the corresponding (partial) peripheral unit 214 without being directly physically or electrically coupled to the RF rail electrode 222 of the corresponding (partial) peripheral unit 214 (e.g., separated by a gap or ground metal). In an example embodiment, the RF bus electrode 212 is formed as a continuation of one or more constraint segments of the corresponding (partial) peripheral unit 214, such that the RF bus electrode 212 is directly physically and / or directly electrically coupled to the RF rail electrode 222.

[0065] In the illustrated embodiment, different and / or discrete RF bus electrodes 212 are disposed along opposite sides or edges of the peripheral region 216. In various embodiments, different and / or discrete RF bus electrodes 212 are disposed along three or four sides or edges of the peripheral region 216. In an example embodiment, the RF bus 210 may include different and / or discrete RF bus electrodes 212 disposed along one or more sides or edges (e.g., opposite sides or edges) of the peripheral region 216, and may include continuous RF bus electrodes (e.g., similar to RF bus electrodes 112) along one or more other sides or edges (e.g., another pair of opposite sides or edges) of the peripheral region 216.

[0066] Figure 2 Different and / or discrete RF bus electrodes 212 are shown to be circular, annular, and / or elliptical. However, in various embodiments, different and / or discrete RF bus electrodes 212 can have various shapes. For example, different and / or discrete RF bus electrodes 212 can be circular, triangular, square, rectangular, polygonal, irregular, simulating and / or similar to the topology and / or geometry of RF rail electrodes (e.g., the topology and / or geometry of the RF rail electrodes of tiled cell 135), and the like, suitable for reducing and / or mitigating periodic array edge effect perturbations of the periodic array of the capture region 230 within the central region 220 of the atomic object confinement device 200.

[0067] Figure 3 An example embodiment of an atomic object constraint device 300 is shown, including an RF bus 310 comprising continuous gradient edge RF bus electrodes 312. For example, the atomic object constraint device 300 includes multiple electrodes. These multiple electrodes include continuous gradient edge RF bus electrodes 312, multiple RF rail electrodes 322, and multiple TT electrodes (similar to...). Figure 1A (As shown in the diagram). Some (e.g., most) of the RF rail electrodes 322 are located within the central region 320 of the atomic object constraint device 300, and some of the RF rail electrodes 322 are located within a peripheral region 316 disposed around the central region 320, forming a (partial) peripheral unit 314. Within the central region 320 of the atomic object constraint device 300, the RF rail electrodes 322 define a periodic array of one-dimensional constraint segments 332.

[0068] When an (RF) oscillation voltage signal is applied to the RF rail electrode 322 of the central region 320, a two-dimensional array of one-dimensional capture regions 330 is generated. However, the periodicity of this array in the capture region 330 is substantially perturbed due to the perturbation caused by the array edge effect corresponding to the edge of the two-dimensional periodic array of the one-dimensional constraint segment 332. When an (RF) oscillation voltage signal is applied to both the RF rail electrode 322 and the RF bus 310 of the central region 320 (e.g., the RF rail electrode 322 and the RF bus electrode 312 located in the peripheral region 316), a substantially periodic two-dimensional array of one-dimensional capture regions 330 is generated.

[0069] like Figure 3 As shown, in various embodiments, the RF bus electrode 312 is a continuous gradient edge RF bus electrode 312. As described above, the continuous RF bus electrode extends substantially along the edge or side of the peripheral region 316. Figure 3As shown, the gradient edge RF bus electrode 312 has a gradient or tilt relative to one or both edges or sides 302, 304 of the RF bus electrode (e.g., instead of like...). Figure 1 The RF bus electrode 112 shown is essentially rectangular. For example, in the example embodiment, given... Figure 3 As shown in the coordinate definition, the inner edge 302 of the RF bus electrode 312 is a function of both x and y. For example, in the example embodiment, given... Figure 3 As shown in the coordinate definition, the outer edge 304 of the RF bus electrode 312 is a function of both x and y. In the example embodiment, the inner edge 302 is constant with respect to the corresponding x or y, and the outer edge 304 of the RF bus electrode 312 is a function of both x and y, such that the width of the RF bus electrode 312 varies along its length. For example, one pair of inner edges 302 of the RF bus electrode 312 may have constant x values, while another pair of inner edges 302 of the RF bus electrode 312 may have constant y values, and the outer edges 304 of all RF bus electrodes 312 may be slanted, diagonal, and / or non-trivial functions of both x and y. In the example embodiment, the RF bus electrode 312 is narrowest at the reflection symmetry axes 306, 308, and / or the atomic object constraint device 300 is narrowest. For example, in the example embodiment, the RF bus electrode 312 is narrowest at its midline (e.g., having its minimum width). In the example embodiment, the RF bus electrode 312 is widest at the edge of the atomic object constraint device 300 and / or the atomic object constraint device 300 is widest. For example, in the example embodiment, the RF bus electrode 312 is widest at its far end.

[0070] In various embodiments, the RF bus electrode 312 includes a plurality of consecutive RF bus electrodes, each RF bus electrode substantially spanning and / or extending along a corresponding side or edge of the peripheral region 316. In example embodiments, the RF bus electrodes 312 on opposite sides or edges of the peripheral region 316 are mirror images of each other (e.g., reflected on their respective axes of reflection symmetry 306 or 308). In various embodiments, the RF bus 310 includes a plurality of RF bus electrodes 312 having adjacent, adjacent, and / or contiguous RF bus electrodes 312 that are not directly electrically connected to each other (e.g., separated from each other by gaps or ground metal). In example embodiments, the RF bus electrode 312 is a single electrode that extends substantially around the peripheral region 316. For example, the RF bus electrode 312 may be formed as a single electrode extending around the periphery of the entire peripheral region 316 and / or the central region 320.

[0071] Figure 4An example embodiment of an atomic object constraint device 400 is shown, including an RF bus 410, which includes RF bus electrodes 412 (e.g., 412A, 412B) and corner features 418. For example, the atomic object constraint device 400 includes multiple electrodes. These multiple electrodes include RF bus electrodes 412 with corner features 418, multiple RF rail electrodes 422, and multiple TT electrodes (similar to...). Figure 1A (As shown in the diagram). Some (e.g., most) of the RF rail electrodes 422 are located within the central region 420 of the atomic object constraint device 400, and some (e.g., a few) of the RF rail electrodes 422 are located (at least partially) within a peripheral region 416 disposed around the central region 420, forming (partial) peripheral units 414. Within the central region 420 of the atomic object constraint device 400, the RF rail electrodes 422 at least partially define a periodic array of one-dimensional constraint segments 432.

[0072] When an (RF) oscillation voltage signal is applied to the RF rail electrode 422 of the central region 420, a two-dimensional array of one-dimensional capture regions 430 is generated. However, the periodicity of this array in the capture region 430 is substantially disturbed due to the perturbation caused by the array edge effect corresponding to the edge of the two-dimensional periodic array of the one-dimensional constraint segment. When an (RF) oscillation voltage signal is applied to both the RF rail electrode 422 and the RF bus 410 of the central region 420 (e.g., the RF rail electrode 422 and the RF bus electrode 412 (including corner feature 418) disposed in the peripheral region 416), a substantially periodic two-dimensional array of one-dimensional capture regions 430 is generated.

[0073] like Figure 4 As shown, in various embodiments, the RF bus electrode 412 is a continuous electrode including a corner feature 418. The corner feature 418 is disposed at the corner of the peripheral region 416 and is a portion of the RF bus electrode and / or RF bus electrode 412 that has a different topology and / or geometry compared to portions of the RF bus electrode 412 that are not corner feature 418 (e.g., extending substantially along the side or edge of the peripheral region). For example, Figure 4 The first corner feature 418A shown extends outward beyond the outer edge 404A of the first RF bus electrode 412A and outward beyond the outer edge 408B of the second RF bus electrode 412B.

[0074] In an example embodiment, the first and second RF bus electrodes 412A, 412B are portions of a continuous RF bus electrode that extend substantially around and / or around the peripheral region 416. In an example embodiment, the first and second RF bus electrodes 412A, 412B are formed as separate electrodes. In an example embodiment, the first corner feature 418A is a portion of the first and / or second RF bus electrodes 412A, 412B and / or a portion of a continuous RF bus electrode that extends substantially around the peripheral region 416. In an example embodiment, the corner feature 418 is formed as a separate RF bus electrode (e.g., separate from the RF bus electrode 412 that extends (substantially) along the side or edge of the peripheral region 416).

[0075] In the example embodiment, the first RF bus electrode (and / or RF bus electrode portion) 412A extends substantially along a first side or edge 415A of the peripheral region 416 of the atomic object constraint device 400, and the second RF bus electrode (and / or RF bus electrode portion) 412B extends substantially along a second side or edge 415B of the peripheral region 416. The first and second sides or edges 415A, 415B of the peripheral region 416 meet, are adjacent to each other, and / or are adjacent to each other at a corner 417.

[0076] In an example embodiment, a first corner feature 418A is formed at corner 417 by changing the width of RF bus electrodes 412A, 412B and / or otherwise altering the topology, geometry, and / or surface profile. For example, in the illustrated embodiment, the first corner feature 418A is formed by increasing the width of the first and second RF bus electrodes (and / or RF bus electrode portions) 412A, 412B near and / or adjacent to corner 417.

[0077] In the example embodiment, the vicinity and / or proximity of corner 417 is defined as being within an extended, facing, or open region or sector away from the central region 420, and corner 417 is formed by a dashed line 406B extending from the inner edge 402B of the second RF bus electrode 412B and a dashed line 406A extending from the inner edge 402A of the first RF bus electrode 412A. In the example embodiment, the vicinity and / or proximity of corner 417 is defined as being within an extended, facing, and / or open region or sector away from the central region 420, and corner 417 is formed by a dashed line 408B extending laterally from the second edge 415B and the RF rail electrode 422 closest to corner 417 and a dashed line 408A extending laterally from the second edge 415A and the RF rail electrode 422 closest to corner 417. In the example embodiment, the vicinity and / or proximity of corner 417 is defined as being within a region or sector adjacent to the central region 420. For example, in an exemplary embodiment, the vicinity and / or proximity of corner 417 is defined as the area or sector formed by the outward extension (dashed) line 409B of the third edge 415C of the peripheral region 416 and the outward extension (dashed) line 409A of the fourth edge 415D of the peripheral region 416, wherein the third and fourth edges 415C, 415D intersect.

[0078] In various embodiments, the RF bus is formed by combining various elements of RF buses 110, 210, 310, and / or 410. For example, in an exemplary embodiment, the RF bus includes gradient edge RF bus electrodes with corner features. In another exemplary embodiment, the RF bus includes different and / or discrete RF bus electrodes and corner features. In an exemplary embodiment, the RF bus includes different and / or discrete RF bus electrodes whose dimensions vary along the size of the atomic object constraint device, the distance from the corner, the distance from the center point of the atomic object constraint device, the distance from the edge of the central region, and / or the like.

[0079] Technological advantages

[0080] To perform large-scale quantum computing using QCCD-based quantum processors, parallelization of various operations and / or functions is required. Specifically, limitations on the number of wires connecting the atom-object confinement device (typically housed in a cryostat and / or vacuum chamber) to the QCCD-based quantum processor, and the number of connection points or pins on the chip forming the atom-object confinement device, impose an upper limit on the number of operable / controllable electrodes of the atom-object confinement device. Furthermore, executing deep quantum circuits typically requires a large number of qubits on which numerous operations and / or functions are performed. These operations and / or functions need to be executed within the coherence time of the qubits. A technique for reducing the amount of time required to execute these operations and / or functions, enabling the execution of deep quantum circuits during the coherence time of the qubits, aims to perform some operations and / or functions in parallel (within the limits allowed by the quantum circuit and / or the hardware used). Therefore, there is a technical problem regarding how to achieve parallel performance of operations and / or functions in QCCD-based quantum processors.

[0081] One solution to these problems is to use an atomic object confinement device comprising a periodic array of confinement segments as the underlying hardware for a QCCD-based quantum processor. For example, the periodicity of the array of confinement segments can be used to parallelize various operations and / or functions. However, because the periodic array of confinement segments is finite and / or has edges, the effects caused by the edges of the periodic array of confinement segments result in periodic perturbations of the trapping pseudopotential in the central region of the atomic object confinement device. In other words, the finite size and / or edges of the periodic array of confinement segments cause periodic perturbations of the array of trapping regions generated by applying an oscillating (RF) voltage signal to RF rail electrodes, which at least partially define the periodic array of confinement segments.

[0082] Periodic perturbations to the array of the capture region reduce the ability to perform operations in parallel with high fidelity and efficiency. For example, perturbations affect the periodicity of the electric and / or magnetic fields passing through the atomic object confinement device (e.g., in its central region, in the peripheral region and / or nearby, and / or similar). These perturbations cause the position of the atomic object confined within the periodic array to change from one cell to another, thus affecting the accuracy of laser alignment and broadcast DC signals (e.g., applied as control voltage signals to TT electrode 156). These perturbations can also cause changes in the motion frequency of the atomic objects in different cells of the periodic array, thus affecting the accuracy of operations performed using a broadcast laser or any other applied field (e.g., microwaves or magnetic fields). Therefore, there is a technical problem regarding how to mitigate the effects of the array edges on the operation of the atomic object confinement device.

[0083] Various embodiments provide technical solutions to these technical problems. For example, in various embodiments, in addition to RF rail electrodes, the plurality of electrodes of the atomic object confinement device also include one or more RF bus electrodes. In various embodiments, the one or more RF bus electrodes are disposed around at least a portion of the peripheral region, which is disposed around the periodic array of the central region and / or the confinement segment. The RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the trapping pseudopotential within the central portion of the atomic object confinement device is substantially periodic. For example, the RF bus electrodes are configured such that when an oscillating voltage signal is applied thereto, the periodic perturbation to the periodic array of the trapping region is reduced and / or mitigated. For example, the potential generated by applying the oscillating voltage signal to one or more RF bus electrodes cancels, reduces, and / or mitigates at least a portion of the edge effect perturbation caused by the finite size of the periodic array of the confinement segment, which affects the periodicity of the array of trapping regions in the central region of the atomic object confinement device. Therefore, various embodiments provide technical improvements to the field of atomic object confinement devices, quantum processors, quantum computers, and / or the like.

[0084] An exemplary quantum computer including an atom object confinement device

[0085] As described above, the atomic object confinement devices 100, 200, 300, and 400 can be part of the quantum processor of a quantum computer. For example, the atomic objects captured and / or confined by the atomic object confinement devices 100, 200, 300, and 400 can be used as qubits of the quantum processor. The configuration of the RF bus electrodes and RF rail electrodes to form a periodic array of capture regions (when an oscillating voltage signal is applied to the RF bus electrodes and RF rail electrodes) enables the quantum processor to perform parallel operations efficiently. Figure 5 A schematic diagram of an exemplary quantum computer system 500 according to an exemplary embodiment is provided, the system including an atomic object confinement device 520 (e.g., atomic object confinement devices 100, 200, 300, 400, and / or the like) including an RF bus. In various embodiments, the quantum computing system 500 includes a computing entity 10 and a quantum computer 510. In various embodiments, the quantum computer 510 includes a controller 30 and a quantum processor 515. In various embodiments, the quantum processor 515 includes the atomic object confinement device 520 (including an RF bus) enclosed in a cryostat and / or vacuum chamber 40, one or more voltage sources 50, one or more manipulation sources 60, and / or the like.

[0086] In example embodiments, one or more manipulation sources 60 include one or more lasers (e.g., optical lasers and / or microwave sources and / or the like). In various embodiments, one or more manipulation sources 60 are configured to manipulate and / or cause controlled quantum state evolution of one or more atomic objects within the atomic object confinement device 520. For example, in example embodiments, one or more manipulation sources 60 include one or more lasers that can provide one or more laser beams (e.g., along corresponding optical paths 66A, 66B, 66C) to the confinement device within the cryostat and / or vacuum chamber 40. The laser beams can be used to perform various operations (e.g., parallel operations), such as establishing one or more quantum gates on one or more qubits, resonant cooling of one or more atomic objects, reading qubits and / or determining the quantum state of atomic objects, initializing atomic objects to qubit space, and / or similar operations. In various embodiments, the manipulation source 60 is controlled by a corresponding driver controller element 615 of the controller 30 (see...). Figure 6 )control.

[0087] In various embodiments, the quantum computer 510 includes one or more voltage sources 50. For example, voltage sources 50 may include multiple TT voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. In example embodiments, voltage sources 50 may be electrically coupled to corresponding potential generating elements (e.g., TT electrode 156, RF rail electrode, RF bus electrode) of the atom object confinement device 520. For example, voltage sources 50 are configured to provide (RF) oscillating voltage signals to the RF rail electrodes and RF bus electrodes of the atom object confinement device 520. For example, voltage sources 50 are configured to provide control voltage signals to the TT electrode 156. In various embodiments, voltage sources 50 are controlled by corresponding driver controller elements 615 of the controller 30.

[0088] In various embodiments, computing entity 10 is configured to allow a user (e.g., via a user interface of computing entity 10) to provide input to quantum computer 510 and to receive and / or view output from quantum computer 510, etc. Computing entity 10 may communicate with controller 30 of quantum computer 510 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication systems. In example embodiments, computing entity 10 may convert, configure, format, and / or similarly operate information / data, quantum circuits, quantum computing algorithms, and / or the like into a computing language, executable instructions, and / or command set, etc., that controller 30 can understand and / or implement.

[0089] In various embodiments, controller 30 is configured to control voltage source 50, cryogenic and / or vacuum systems controlling temperature and pressure within cryostat and / or vacuum chamber 40, manipulation source 60, and / or various environmental conditions (e.g., temperature, pressure, magnetic field, and / or the like) within cryostat and / or vacuum chamber 40, and / or other systems configured to manipulate and / or induce controlled evolution of one or more atomic object quantum states within the atomic object confinement device. For example, controller 30 may induce controlled evolution of one or more atomic object quantum states within atomic object confinement device 520 to execute quantum circuits and / or algorithms. In various embodiments, atomic objects confinement within atomic object confinement device 520 are used as qubits of quantum computer 510 and / or quantum processor 515. For example, quantum processor 515 may include a plurality of multi-atom object crystals, each multi-atom object crystal including a first atomic object serving as a qubit atomic object for the quantum processor and a second atomic object serving as a resonant cooling atomic object for cooling the qubit atomic objects of the same multi-atom object crystal.

[0090] Exemplary controller

[0091] In various embodiments, the atomic object confinement device is incorporated into the quantum computer 510. In various embodiments, the quantum computer 510 also includes a controller 30 configured to control various elements of the quantum computer 510. For example, the controller 30 may be configured to control a voltage source 50, a cryogenic system and / or a vacuum system controlling temperature and pressure within a cryostat and / or vacuum chamber 40, a manipulation source 60, a cooling system, and / or to control environmental conditions (e.g., temperature, humidity, pressure, magnetic field, and / or the like) within the cryostat and / or vacuum chamber 40, and / or other systems configured to manipulate and / or induce controlled evolution of one or more atomic object quantum states confined by the atomic object confinement device 520.

[0092] like Figure 6As shown, in various embodiments, controller 30 may include various controller elements, including processing elements and / or devices 605, memory 610, driver controller element 615, communication interface 620 and / or analog-to-digital converter element 625, and / or the like. For example, processing elements and / or devices 605 may include programmable logic devices (CPLDs), microprocessors, coprocessor entities, application-specific instruction set processors (ASIPs), integrated circuits, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, other processing devices and / or circuitry (and / or the like), and / or controllers. The term "circuitry" can refer to an entire hardware embodiment or a combination of hardware and computer program products. In an example embodiment, the processing elements and / or devices 605 of controller 30 include a clock and / or communicate with a clock. For example, processing elements and / or devices 605 are configured to determine how to cause quantum processor 515 to execute quantum circuits using parallel (e.g., simultaneous) operation, and then control various aspects of the quantum computer (e.g., by providing instructions to the respective driver controller elements 615) to cause quantum processor 515 to execute quantum circuits using parallel operation.

[0093] For example, memory 610 may include non-transitory memory, such as volatile and / or non-volatile memory, such as one or more of the following: hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, Memory Stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, track memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory and / or register memory. In various embodiments, memory 610 may store qubit records corresponding to the qubits of a quantum computer (e.g., in a qubit record data store, qubit record database, qubit record table, and / or the like), calibration tables, executable queues, computer program code (e.g., a dedicated controller language in one or more computer languages) and / or the like), one or more libraries, one or more waveform sequences for forming control voltage signals to control the transport of atomic objects along a one-dimensional capture region and through connections connecting the one-dimensional capture region and associated metadata, and / or the like. In an example embodiment, execution of at least a portion of the computer program code stored in memory 610 (e.g., by processing elements and / or device 605) causes controller 30 to perform one or more steps, operations, processes, procedures, and / or the like described herein, and causes phase adjustments of one or more manipulation sources and / or the resulting signals.

[0094] In various embodiments, the driver controller element 615 may include one or more driver and / or controller elements, each configured to control one or more drivers. In various embodiments, the driver controller element 615 may include drivers and / or driver controllers. For example, a driver controller may be configured to cause one or more corresponding drivers to operate according to executable instructions and / or commands scheduled and executed by the controller 30 (e.g., by the processing element and / or device 605). In various embodiments, the driver controller element 615 may enable the controller 30 to operate the manipulation source 60, voltage source 50, and / or the like. In various embodiments, the driver may be a laser driver; a vacuum component driver; a driver for controlling current and / or voltage applied to TT electrodes, RF rail electrodes, RF bus electrodes, and / or other electrodes for maintaining and / or controlling the capture potential of an atomic object confinement device and / or causing the transfer of one or more atomic objects; a cryogenic and / or vacuum system component driver; and / or the like. For example, the driver may control and / or include a TT and / or RF voltage driver and / or voltage source 50, which provides voltage and / or electrical signals (e.g., oscillating voltage signals and / or control voltage signals) to the TT electrode, RF rail electrode and / or RF bus electrode.

[0095] In various embodiments, controller 30 includes means for transmitting and / or receiving signals from one or more optical receiver components (e.g., photodetectors, cameras, MEM cameras, CCD cameras, photodiodes, photomultiplier tubes), and / or similar optical collection systems configured to capture, detect, measure, and / or similar optical signals generated by atomic objects captured and / or constrained by atomic object constraint means 520. For example, controller 30 may include one or more analog-to-digital converter elements 625 configured to receive signals from one or more optical receiver components and / or calibration sensors and / or the like.

[0096] In various embodiments, controller 30 may include a communication interface 620 for interfacing with and / or communicating with computing entity 10. For example, controller 30 may include communication interface 620 for receiving executable instructions and / or command sets from computing entity 10, and providing computing entity 10 with output received from quantum computer 510 (e.g., from an optical collection system) and / or the results of processing that output. In various embodiments, computing entity 10 and controller 30 may communicate via direct wired and / or wireless connections and / or one or more wired and / or wireless networks 20.

[0097] Exemplary computing entity

[0098] Figure 7An illustrative schematic representation of an example computing entity 10 that can be used in conjunction with embodiments of the present invention is provided. In various embodiments, computing entity 10 is configured to allow a user (e.g., via a user interface of computing entity 10) to provide input to quantum computer 510 and to receive, display, and / or analyze output 510 from quantum computer, etc.

[0099] like Figure 7As shown, computing entity 10 can include an antenna 712, a transmitter 704 (e.g., a radio transmitter), a receiver 706 (e.g., a radio receiver), and processing elements 708 that provide signals to the transmitter 704 and receive signals from the receiver 706. The signals provided to the transmitter 704 and received from the receiver 706 can include signaling information / data conforming to the applicable air interface standard of the wireless system for communication with various entities, such as controller 30 and / or other computing entities 10. In this respect, computing entity 10 can operate with one or more air interface standards, communication protocols, modulation types, and access types. For example, computing entity 10 can be configured to receive and / or provide communication using wired data transmission protocols such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Cable Data Service Interface Specification (DOCSIS), or any other wired transmission protocol. Similarly, computing entity 10 can be configured to communicate via a wireless external communication network using any of a variety of protocols, such as General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data Rate GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolved Data Optimized (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), Ultra Wideband (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other wireless protocol. Computing entity 130 can use protocols and standards such as Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Remote Login, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transfer Protocol (SCTP), and / or Hypertext Markup Language (HTML) to communicate.

[0100] Through these communication standards and protocols, computing entity 10 can communicate with various other entities using concepts such as Unstructured Supplemental Service Message / Data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM Dialer). For example, computing entity 10 can also download changes, add-ons, and updates to its firmware, software (e.g., software including executable instructions, applications, program modules), and operating system. In various embodiments, computing entity 10 includes one or more network interfaces 720 configured to communicate via one or more wired and / or wireless networks 20.

[0101] The computing entity 10 may also include a user interface device comprising one or more user input / output interfaces (e.g., a display 716 coupled to the processing element 708 and / or a speaker / speaker driver, and a touchscreen, keyboard, mouse, and / or microphone coupled to the processing element 708). For example, the user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, and / or similar terms interchangeably used herein, executed on and / or accessed via the computing entity 10, resulting in the display or auditory presentation of information / data, and interaction with them via one or more user input interfaces. The user input interface may include any of a plurality of devices that allow the computing entity 10 to receive data, such as a keyboard 718 (hard keyboard or soft keyboard), a touch display, a voice / speech or motion interface, a scanner, a reader, or other input device. In embodiments including a keyboard 718, the keyboard 718 may include (or cause to display) regular numbers (0-9) and related keys (#, *) as well as other keys for operating the computing entity 10, and may include a full set of alphanumeric keys or a set of keys that can be enabled to provide a full set of alphanumeric keys. In addition to providing input, the user input interface can also be used to, for example, enable or disable certain functions (e.g., screen saver and / or sleep mode). Through such input, the computing entity 10 can collect information / data and / or user interaction / input, etc.

[0102] The computing entity 10 may also include volatile memory or storage 722 and / or non-volatile memory or storage 724, which may be embedded and / or removable. For example, non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, Memory Stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and / or the like. Volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDRSDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. The volatile and non-volatile memory or storage may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, bytecode, compiled code, interpreted code, machine code, and / or executable instructions to implement the functionality of the computing entity 10.

[0103] in conclusion

[0104] Benefiting from the teachings presented in the foregoing description and the accompanying drawings, those skilled in the art will conceive of many modifications and other embodiments of the invention set forth herein. Therefore, it should be understood that the invention is not limited to the specific embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terminology is used herein, it is used only in a general and descriptive sense and not for limiting purposes.

[0105] The following additional terms are part of the instruction manual:

[0106] 1. An atomic object constraint device, comprising:

[0107] A plurality of electrodes, including a plurality of radio frequency (RF) rail electrodes, the plurality of RF rail electrodes being configured to at least partially define a periodic array of constrained segments, wherein the plurality of RF rail electrodes are configured such that when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes generate a pseudopotential in the form of an array of trapping regions, the array of trapping regions being configured to contain at least one atomic object within a respective trapping region of the array of trapping regions; and

[0108] The plurality of electrodes also includes one or more RF bus electrodes disposed around at least a portion of the peripheral region of the atomic object constraint device, wherein the one or more RF bus electrodes are configured such that when the oscillating voltage signal is applied thereto, the one or more RF bus electrodes make the array of the capture region substantially periodic.

[0109] 2. The atomic object constraint device according to Clause 1, wherein the plurality of RF rail electrodes are arranged in a periodic manner, wherein the periodic arrangement is at least partially defined by tiling units.

[0110] 3. The atomic object constraint device according to Clause 2, wherein a portion of the one or more RF bus electrodes includes one or more peripheral units, the peripheral units being at least partial copies of the tiled units disposed in the peripheral region.

[0111] 4. The atomic object constraint device according to Clause 1, wherein the one or more RF bus electrodes comprise a continuous electrode extending substantially along at least one edge of the peripheral region.

[0112] 5. The atomic object constraint device according to Clause 4, wherein the continuous electrode is substantially rectangular in shape.

[0113] 6. The atomic object constraint device according to Clause 4, wherein the continuous electrode includes electrode portions, each electrode portion extending along a corresponding edge of the peripheral region.

[0114] 7. An atomic object constraint device according to Clause 6, wherein each electrode portion is one of (a) a basic rectangle or (b) a gradient edge.

[0115] 8. The atomic object constraint device according to Clause 6, wherein at least one electrode portion has a width that varies along the length of the at least one electrode portion.

[0116] 9. The atomic object constraint device according to Clause 8, wherein the at least one electrode portion is narrowest at the middle of the at least one electrode portion.

[0117] 10. The atomic object constraint device according to Clause 1, wherein the one or more RF bus electrodes include one or more corner features, each corner feature being disposed at a corresponding corner of the peripheral region.

[0118] 11. The atomic object constraint device according to Clause 1, wherein the one or more RF bus electrodes comprise a plurality of different RF bus electrodes.

[0119] 12. The atomic object constraint device according to Clause 11, wherein each of the plurality of different RF bus electrodes extends from a corresponding end of a corresponding one or a pair of the plurality of RF rail electrodes.

[0120] 13. An atomic object constraint device, comprising:

[0121] One or more radio frequency (RF) rail electrodes and one or more RF bus electrodes, wherein at least a subset of the one or more RF rail electrodes is disposed in the central region of the atomic object constraint device, and the RF bus electrodes are disposed in a peripheral region of the atomic object constraint device surrounding the central region, and wherein the one or more RF rail electrodes and the one or more RF bus electrodes are configured such that when an oscillating voltage signal is applied to the one or more RF rail electrodes and the one or more RF bus electrodes, the one or more RF rail electrodes and the one or more RF bus electrodes generate a periodic array of capture regions in at least a portion of the central region of the atomic object constraint device.

[0122] 14. A quantum computer, comprising:

[0123] Atomic object constraint device, including:

[0124] A plurality of electrodes, including a plurality of radio frequency (RF) rail electrodes, are configured to at least partially define a periodic array of constraint segments, wherein the plurality of RF rail electrodes are configured such that when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes generate an array of trapping regions, the array of trapping regions being configured to contain at least one atomic object within a respective trapping region of the array of trapping regions.

[0125] The plurality of electrodes also includes one or more RF bus electrodes disposed around at least a portion of the peripheral region of the atomic object constraint device, wherein the one or more RF bus electrodes are configured such that when the oscillating voltage signal is applied thereto, the one or more RF bus electrodes make the array of the capture region substantially periodic.

[0126] 15. The quantum computer described in Clause 14 further includes:

[0127] Controller; and

[0128] A voltage source, wherein the controller is configured to cause the voltage source to generate the oscillating voltage signal.

[0129] 16. The quantum computer described in Clause 14 further includes:

[0130] Manipulate the source; and

[0131] One or more optical elements are configured to guide a manipulation signal generated by the manipulation source such that the manipulation signal is incident on two or more locations within a substantially periodic array of the capture region, the two or more locations being corresponding identical points within a period of the substantially periodic array of the capture region.

[0132] 17. The quantum computer according to Clause 16, wherein the atom object constraint device is configured to constrain one or more atom objects, and

[0133] The manipulation signal is configured to perform an operation on at least two of two or more atomic objects, wherein each of the at least two atomic objects is located at a corresponding position of the two or more positions when the manipulation signal is incident on the two or more positions.

[0134] 18. The quantum computer of claim 14, wherein the plurality of RF rail electrodes are arranged in a periodic arrangement, wherein the periodic arrangement is defined at least in part by tiled units, and wherein a portion of one or more RF bus electrodes includes one or more peripheral units, the peripheral units being at least partial copies of the tiled units disposed in a peripheral region.

[0135] 19. The quantum computer according to Clause 14, wherein the one or more RF bus electrodes comprise a continuous electrode extending substantially along at least one edge of the peripheral region.

[0136] 20. The quantum computer according to Clause 14, wherein the one or more RF bus electrodes comprise a plurality of different RF bus electrodes.

Claims

1. An atomic object constraint device, comprising: A plurality of electrodes, including a plurality of radio frequency (RF) rail electrodes, are configured to at least partially define a periodic array of constrained segments, wherein the plurality of RF rail electrodes are configured such that when an oscillating voltage signal is applied thereto, the plurality of RF rail electrodes generate a pseudopotential in the form of an array of trapping regions, the array of trapping regions being configured to contain at least one atomic object within a respective trapping region of the array of trapping regions; and The plurality of electrodes further includes one or more radio frequency bus electrodes disposed around at least a portion of the peripheral region of the atomic object constraint device, wherein the one or more radio frequency bus electrodes are configured such that when the oscillating voltage signal is applied thereto, the one or more radio frequency bus electrodes make the array of the capture region substantially periodic, and wherein the one or more radio frequency bus electrodes include continuous electrodes extending substantially along at least one edge of the peripheral region.

2. The atomic object constraint device according to claim 1, wherein the plurality of radio frequency guide electrodes are arranged in a periodic manner, wherein the periodic arrangement is at least partially defined by tiling units.

3. The atomic object constraint device of claim 2, wherein a portion of the one or more radio frequency bus electrodes includes one or more peripheral units, the peripheral units being at least partial copies of the tiled units disposed in the peripheral region.

4. The atomic object constraint device according to claim 1, wherein the continuous electrode comprises electrode portions, each electrode portion extending along a corresponding edge of the peripheral region.

5. The atomic object constraint device according to claim 4, wherein each electrode portion is one of (a) a basic rectangle or (b) a gradient edge.

6. The atomic object constraint device according to claim 4, wherein at least one electrode portion has a width that varies along the length of the at least one electrode portion.

7. The atomic object confinement device according to claim 6, wherein the at least one electrode portion is narrowest at the middle of the at least one electrode portion.

8. The atomic object constraint device according to claim 1, wherein the one or more radio frequency bus electrodes include one or more corner features, each corner feature being disposed at a corresponding corner of the peripheral region.

9. The atomic object constraint device according to claim 1, wherein the one or more radio frequency bus electrodes further comprises a plurality of different radio frequency bus electrodes.

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