Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium

Abstract

The present application provides a substrate processing apparatus, a semiconductor device manufacturing method, and a storage medium, which can avoid the problem that a substrate cannot be peeled from a substrate holder due to the fixing connection of the substrate to the substrate holder by a formed film when the substrate is unloaded from the substrate holder. The substrate processing apparatus has: a substrate holder provided with a substrate placement portion on which a substrate is placed; a substrate transfer mechanism that loads or unloads the substrate with respect to the substrate placement portion; a processing container that accommodates the substrate holder holding the substrate; a film formation gas supply system that supplies a film formation gas to the substrate in the processing container; and a control portion that can control the substrate transfer mechanism and the film formation gas supply system so that, during a period from the start of a film formation process of supplying the film formation gas to the substrate to the formation of a film of a desired thickness on the substrate, the implementation of the film formation process is interrupted at least once, and a peeling process of the substrate placed on the substrate placement portion is performed.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus, a manufacturing method of a semiconductor device, and a storage medium. BACKGROUND

[0002] As one of manufacturing processes of a semiconductor device, there is a process of forming a film of a desired thickness on a substrate held by a substrate holder, and then performing a process of unloading the substrate from the substrate holder (for example, refer to Patent Documents 1 and 2).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-252105

[0006] Patent Document 2: WO 2005 / 055314 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] An object of the present disclosure is to provide a technology that avoids a situation in which a substrate is fixedly connected to a substrate holder and cannot be peeled from the substrate holder by a film formed when the substrate is unloaded from the substrate holder.

[0009] SOLUTION TO THE PROBLEM

[0010] According to one embodiment of the present disclosure, there is provided a technology having:

[0011] a substrate holder provided with a substrate placement portion on which a substrate is placed;

[0012] a substrate transfer mechanism that loads or unloads the substrate with respect to the substrate placement portion;

[0013] a processing container that accommodates the substrate holder holding the substrate;

[0014] a film formation gas supply system that supplies a film formation gas to the substrate in the processing container; and

[0015] a control portion that controls the substrate transfer mechanism and the film formation gas supply system so that, during a period from the start of a film formation process of supplying the film formation gas to the substrate to the formation of a film of a desired thickness on the substrate, the implementation of the film formation process is interrupted at least once, and a peeling process of the substrate placed on the substrate placement portion is performed.

[0016] EFFECT OF THE INVENTION

[0017] According to this disclosure, the following technology can be provided: avoiding the situation where the substrate cannot be peeled off from the substrate holder because the formed film fixes the substrate to the substrate holder when removing the substrate from the substrate holder. Attached Figure Description

[0018] Figure 1 This is a perspective view of a substrate processing apparatus 1 applicable in one aspect of the present disclosure.

[0019] Figure 2 This is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus 1 applicable in one aspect of the present disclosure, showing the processing furnace 202 portion in a longitudinal sectional view.

[0020] Figure 3 This is a schematic structural diagram of the vertical processing furnace of the substrate processing apparatus 1 applicable in one aspect of this disclosure, which is based on... Figure 2 The AA-line sectional view shows part of the processing furnace 202.

[0021] Figure 4 This is a schematic structural diagram of the controller 124 provided in the substrate processing apparatus 1 applicable in one aspect of the present disclosure, and is a block diagram showing the control system of the controller 124.

[0022] Figure 5 This is a partially enlarged longitudinal cross-sectional view of the crystal boat 217 included in the substrate processing apparatus 1 applicable in one aspect of this disclosure.

[0023] Figure 6 This is a flowchart illustrating an example of the steps in a substrate processing procedure according to one aspect of the present disclosure.

[0024] Figure 7 (a) is a partial enlarged longitudinal cross-sectional view of the boat 217 after the wafer 200 is placed on the substrate mounting section 222. Figure 7 (b) is a partial enlarged longitudinal section view of the boat 217 before the film 300 of critical thickness is formed on the wafer 200 on the substrate mounting portion 222. Figure 7 (c) is a diagram showing the state in which the wafer 200 on the substrate mounting section 222 is lifted using tweezers 111. Figure 7 (d) is a diagram showing the state in which the lifted wafer 200 is placed on the substrate mounting portion 222 using tweezers 111.

[0025] Figure 8 This is a longitudinal sectional view of the main part of the processing container of a substrate processing apparatus applicable in another aspect of this disclosure.

[0026] in:

[0027] 112—Substrate transfer mechanism; 124—Controller; 200—Wafer (substrate); 217—Crystal boat; 222—Substrate mounting section. Detailed Implementation

[0028] <One method of this disclosure>

[0029] The following describes one aspect of this disclosure. Furthermore, all figures used in the following description are schematic diagrams, and the dimensional relationships and ratios of the elements shown may not reflect actual conditions. Additionally, the dimensional relationships and ratios of elements between different figures may not be consistent.

[0030] (1) Example of the overall structure of the substrate processing device

[0031] like Figure 1 As shown, the substrate processing apparatus 1 is configured as a batch vertical heat treatment apparatus. The substrate processing apparatus 1 includes a pressure-resistant container, i.e., a frame 101, inside which a processing furnace 202 is housed, and outside which a control unit, i.e., a controller 124, is located. When transporting wafers 200, which serve as substrates, to and from the frame 101, a wafer cassette 100, serving as a substrate transport container, is used. The wafer cassette 100 is configured to hold multiple wafers (e.g., 25 wafers) 200. A wafer cassette transport port (not shown) is provided on the frame 101 for transporting the wafer cassette 100 to and from the frame 101.

[0032] A wafer cassette stage 105 (hereinafter referred to as stage 105) is provided in the housing 101 as a wafer cassette transfer stage. The wafer cassette 100 can be moved onto the stage 105 or removed from the stage 105 by an external transport device (not shown).

[0033] A wafer cassette shelf 109 for storing wafer cassettes 100 is provided near the stage 105. The wafer cassette shelf 109 is configured to store at least one wafer cassette 100 in multiple layers and rows. As part of the wafer cassette shelf 109, a transfer shelf 123 is provided, which stores the wafer cassettes 100 that are to be transported by the substrate transfer mechanism 112 described later.

[0034] A pre-set wafer cassette shelf 110 for storing pre-set wafer cassettes 100 is provided above the stage 105. Between the stage 105 and the wafer cassette shelf 109 are provided a wafer cassette lift 115 (hereinafter referred to as "lift 115") capable of lifting and lowering while holding wafer cassettes 100; and a wafer cassette transport mechanism 114 (hereinafter referred to as "transport mechanism 114") for transporting wafer cassettes 100. The configuration allows the wafer cassettes 100 to be transported between the stage 105, the wafer cassette shelf 109, and the pre-set wafer cassette shelf 110 by means of the coordinated operation of the lift 115 and the transport mechanism 114.

[0035] A processing furnace 202 is disposed above the interior of the frame 101. The lower end of the processing furnace 202 is configured to be openable and closed via a furnace gate 116. A wafer boat lift 121 (hereinafter referred to as lift 121) is disposed below the processing furnace 202, which lifts and lowers the wafer boat 217, which serves as a substrate holder, relative to the processing furnace 202. A sealing cover 219, which serves as a cover, is horizontally mounted and fixed on a lifting member 122, which is connected to the lifting platform of the lift 121. The sealing cover 219 is configured to vertically support the wafer boat 217 and to close the lower end of the processing furnace 202. In addition, a standby chamber 141 is disposed below the processing furnace 202, which is used for loading, unloading, and wafer stripping processes (described later) of the wafer 200.

[0036] The crystal boat 217 has multiple crystal boat pillars 221. Multiple substrate mounting portions 222 for mounting wafers 200 are provided on the crystal boat pillars 221 (see reference). Figure 5 The crystal boat 217 is configured to support multiple (e.g., 200 to 250) wafers 200 as a multilayer structure.

[0037] like Figure 1 As shown, a substrate transfer mechanism 112 is provided between the elevator 121 and the wafer cassette shelf 109. The substrate transfer mechanism 112 includes a predetermined number (e.g., 5) of tweezers 111 that hold the wafer 200 in a horizontal position, and is mounted on a substrate transfer mechanism elevator 113 (hereinafter referred to as elevator 113) that raises and lowers the substrate transfer mechanism 112. The configuration allows for loading the wafer 200 relative to the substrate mounting section 222 of the wafer boat 217, or unloading the wafer 200 from the substrate mounting section 222, using the coordinated operation of the elevator 113, the substrate transfer mechanism 112, and the tweezers 111. Furthermore, the substrate transfer mechanism 112 includes a sensor 119 that detects whether the peeling process described later was successful (see reference...). Figure 7 (c) Figure 7 (d)

[0038] A cleaning unit 118 is provided above the wafer box shelf 109 to supply purified ambient gas, i.e., clean air. The cleaning unit 118 includes a supply fan and a dust filter (neither shown), and is configured to allow clean air to circulate inside the housing 101.

[0039] (2) Example of operation of substrate processing apparatus 1

[0040] For the wafer cassette 100 that loads the wafer 200 in a vertical orientation, the wafer cassette 100 is placed on the stage 105 with the wafer inlet / outlet facing upwards using an external transport device. Then, the wafer cassette 100 is rotated 90° by the stage 105 to make the wafer 200 horizontal.

[0041] Next, the wafer cassette 100 is transported from the stage 105 to the designated shelf position of the wafer cassette shelf 109 or the pre-wafer cassette shelf 110 using the coordinated action of the elevator 115 and the conveying mechanism 114, and then temporarily stored before being transferred to the transfer shelf 123. Alternatively, the wafer cassette 100 can be transported directly from the stage 105 to the transfer shelf 123 using the coordinated action of the elevator 115 and the conveying mechanism 114.

[0042] If the wafer cassette 100 is transferred to the transfer shelf 123, the tweezers 111 provided on the substrate transfer mechanism 112 pick up the wafer 200 from the wafer cassette 100 and load it into the substrate mounting section 222 provided on the wafer boat 217. The substrate transfer mechanism 112, which has transferred the wafer 200 to the wafer boat 217, returns to the wafer cassette 100 and loads the next wafer 200 into the substrate mounting section 222 of the wafer boat 217.

[0043] When a predetermined number of wafers 200 (e.g., 100 to 200 wafers) are loaded into the substrate mounting section 222 of the wafer boat 217, the furnace gate 116 at the lower end of the closed processing furnace 202 is opened, thus opening the lower end of the processing furnace 202. Then, the wafer boat 217, holding the wafer group 200, is moved (introduced) into the processing furnace 202 by the lifting action of the elevator 121, and the lower part of the processing furnace 202 is closed by the sealing cover 219.

[0044] After import, the wafer 200 undergoes a predetermined process. After processing, the wafer 200 and wafer cassette 100 are shipped out of the housing 101 through the reverse steps described above.

[0045] (3) Structural example of processing furnace 202

[0046] like Figure 2 As shown, the processing furnace 202 has a heater 207 that functions as a temperature regulator (heating unit). The heater 207 is cylindrical and is vertically mounted and fixed by being supported by a retaining plate. The heater 207 also functions as an activation mechanism (excitation unit) that uses thermal energy to activate (excite) the gas.

[0047] A reaction tube 203 is provided concentrically inside the heater 207. The reaction tube 203 contains a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), for example, and is formed in a cylindrical shape with an upper end closed and a lower end open. A header 209 is provided concentrically below the reaction tube 203. The header 209 contains a metal material such as stainless steel (SUS), for example, and is formed in a cylindrical shape with upper and lower ends open. The upper end portion of the header 209 is engaged with the lower end portion of the reaction tube 203, and configured to support the reaction tube 203. An O-ring 220a is provided as a sealing member between the header 209 and the reaction tube 203. The reaction tube 203 is vertically fixed in the same manner as the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the header 209. A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to be able to accommodate a wafer 200 as a substrate. Processing of the wafer 200 is performed in the processing chamber 201.

[0048] The nozzles 249a, 249b are provided as first and second supply portions in the processing chamber 201 in a manner that penetrates the side wall of the header 209, respectively. The nozzles 249a, 249b are also referred to as first and second nozzles, respectively. The nozzles 249a, 249b contain a heat-resistant material such as quartz or SiC, for example. The gas supply pipes 232a, 232b are connected to the nozzles 249a, 249b, respectively. The nozzles 249a, 249b are provided adjacent to each other.

[0049] The mass flow controllers (MFCs) 241a, 241b as flow controllers (flow control portions) and the valves 243a, 243b as on-off valves are provided in this order from the upstream side of the gas flow on the gas supply pipes 232a, 232b, respectively. The gas supply pipe 232c is connected to the gas supply pipe 232a on the downstream side of the valve 243a. The MFC 241c and the valve 243c are provided in this order from the upstream side of the gas flow on the gas supply pipe 232c. The gas supply pipe 232d is connected to the gas supply pipe 232b on the downstream side of the valve 243b. The MFC 241d and the valve 243d are provided in this order from the upstream side of the gas flow on the gas supply pipe 232d. The gas supply pipes 232a to 232d contain a metal material such as SUS, for example.

[0050] As Figure 3As shown, the space between the inner wall of the reaction tube 203 and the wafer 200, in which the nozzles 249a, 249b are arranged, is circular in plan view, and rises from the lower portion of the inner wall of the reaction tube 203 to the upper portion thereof toward the upper side of the wafer 200. That is, the nozzles 249a, 249b are arranged along the wafer arrangement region in the region that horizontally surrounds the wafer arrangement region on the side thereof. Gas supply holes 250a, 250b for supplying gas are provided on the side surfaces of the nozzles 249a, 249b, respectively. The gas supply holes 250a, 250b open toward the center of the wafer 200 in plan view, and are capable of supplying gas toward the wafer 200. The gas supply holes 250a, 250b are provided in a plurality of stages from the lower portion of the reaction tube 203 to the upper portion thereof.

[0051] The source gas, which is one of the film formation gases, is supplied from the gas supply pipe 232a to the processing chamber 201 via the MFC 241a, the valve 243a, and the nozzle 249a.

[0052] The dopant gas, which is one of the film formation gases, is supplied from the gas supply pipe 232b to the processing chamber 201 via the MFC 241b, the valve 243b, and the nozzle 249b.

[0053] The inert gas is supplied from the gas supply pipes 232c, 232d to the processing chamber 201 via the MFCs 241c, 241d, the valves 243c, 243d, and the gas supply pipes 232a, 232b, and the nozzles 249a, 249b, respectively. The inert gas is used as a purge gas, a carrier gas, a dilution gas, and the like.

[0054] The film formation gas supply system (source gas supply system, dopant gas supply system) is mainly composed of the gas supply pipes 232a, 232b, the MFCs 241a, 241b, and the valves 243a, 243b. The inert gas supply system is mainly composed of the gas supply pipes 232c, 232d, the MFCs 241c, 241d, and the valves 243c, 243d.

[0055] Any or all of the above-described supply systems can be constituted by an integrated supply system 248 that integrates the valves 243a to 243d, the MFCs 241a to 241d, and the like. The integrated supply system 248 is connected to the gas supply pipes 232a to 232d, and is configured to be able to control the supply of various substances (various gases) into the gas supply pipes 232a to 232h, that is, the opening and closing of the valves 243a to 243d, the flow rate adjustment by the MFCs 241a to 241d, and the like, by the controller 124 described later. The integrated supply system 248 is configured as an integrated unit of a unit type or a divided type, and is able to be attached to and detached from the gas supply pipes 232a to 232d and the like as an integrated unit, and is configured to be able to perform maintenance, replacement, addition, and the like of the integrated supply system 248 as an integrated unit.

[0056] An exhaust port 231a that exhausts the ambient gas in the processing chamber 201 is provided below the side wall of the reaction pipe 203. The exhaust port 231a can be provided from the lower portion to the upper portion of the side wall of the reaction pipe 203, that is, along the wafer arrangement region. An exhaust pipe 231 is connected to the exhaust port 231a. The exhaust pipe 231 contains, for example, a metal material such as SUS. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector (pressure detection portion) that detects the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulation portion). The APC valve 244 is configured to be able to perform vacuum exhaust and stop vacuum exhaust in the processing chamber 201 by opening and closing the valve in a state in which the vacuum pump 246 is operated, and to be able to adjust the pressure in the processing chamber 201 by adjusting the valve opening degree based on the pressure information detected by the pressure sensor 245 in a state in which the vacuum pump 246 is operated. The exhaust system is mainly constituted by the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 can also be included in the exhaust system.

[0057] A sealing cover 219, serving as a furnace opening cover, is provided below the manifold 209. This sealing cover 219 can airtightly seal the lower opening of the manifold 209. The sealing cover 219 is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cover 219 and abuts against the lower end of the manifold 209. A rotation mechanism 267 for rotating the crystal boat 217 is provided below the sealing cover 219. The rotation shaft 255 of the rotation mechanism 267 is made of a metal material such as SUS and passes through the sealing cover 219 and is connected to the crystal boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the crystal boat 217. The sealing cover 219 is configured to be able to be raised and lowered in the vertical direction by a lifting mechanism 121, which is located outside the reaction tube 203.

[0058] The crystal boat 217, serving as a substrate holder, has multiple substrate mounting portions 222 that support the wafers 200. It is configured to neatly arrange, for example, 25 to 200 wafers 200 in a horizontal orientation and with their centers aligned vertically, and support them in a multi-layered, open-spaced configuration. The crystal boat 217 contains, for example, a heat-resistant material such as quartz or SiC. At the lower part of the crystal boat 217, for example, a heat-insulating plate 218 containing a heat-resistant material such as quartz or SiC is supported on multiple layers.

[0059] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. Based on the temperature information detected by the temperature sensor 263, the energizing state of the heater 207 is adjusted to achieve the desired temperature distribution within the processing chamber 201. The temperature sensor 263 is disposed along the inner wall of the reaction tube 203.

[0060] like Figure 4 As shown, the control unit (control unit), i.e., the controller 124, is configured as a computer, which includes: a CPU (Central Processing Unit) 124a, RAM (Random Access Memory) 124b, a storage device 124c, and an I / O port 124d. The RAM 124b, storage device 124c, and I / O port 124d are configured to exchange data with the CPU 124a via an internal bus 124e. An input / output device 125, such as a touch panel, is connected to the controller 124. Furthermore, an external storage device 126 can be connected to the controller 124.

[0061] The storage device 124c is constituted by, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), or the like. In the storage device 124c, a control program that controls the operation of the substrate processing apparatus 1, a process recipe in which steps or conditions of the substrate processing described later are recorded, and the like are stored in a readable manner. The process recipe functions as a program and is composed by being combined so as to cause the substrate processing apparatus 1 to perform each step in the substrate processing described later by the controller 124 to achieve a predetermined result. Hereinafter, the process recipe or the control program and the like will be simply referred to as a program. In addition, the process recipe will be simply referred to as a recipe. In the present specification, the meaning of the term "program" includes only the recipe alone, only the control program alone, or both of them. The RAM 124b is constituted as a storage area (work area) in which a program or data and the like read by the CPU 124a are temporarily held.

[0062] The I / O port 124d is connected to the MFCs 241a to 241d, the valves 243a to 243d, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the heater 207, the rotation mechanism 267, the elevator 121, the furnace door 116, and the like described above.

[0063] The CPU 124a is constituted so as to be able to read and execute the control program from the storage device 124c, and read the recipe from the storage device 124c in accordance with an operation instruction or the like input from the input / output device 125. The CPU 124a is constituted so as to be able to control, in accordance with the content of the recipe read, the flow rate adjustment operation of each of the various substances (various gases) by the MFCs 241a to 241d, the opening and closing operation of the valves 243a to 243d, the opening and closing operation of the APC valve 244, the pressure adjustment operation based on the pressure sensor 245 and by the APC valve 244, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the wafer boat 217 by the rotation mechanism 267, the lifting operation of the wafer boat 217 by the elevator 121, and the like.

[0064] The controller 124 can be configured by installing the above-described program stored in the external storage 126 to the computer. The external storage 126 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, an optical-magnetic disk such as an MO, a USB memory, a semiconductor memory such as an SSD, or the like. The storage 124c or the external storage 126 is configured as a storage medium that is readable by the computer. These will also be simply referred to as a storage medium hereinafter. In the present specification, the meaning of the term "storage medium" includes only the storage 124c alone, only the external storage 126 alone, or both. Furthermore, the provision of the program to the computer can be performed not by using the external storage 126 but by using a communication means such as the Internet or a dedicated line.

[0065] (4) Substrate processing step

[0066] Next, a substrate processing step of one embodiment of the present disclosure will be described with reference to Figure 6 and Figure 7 In the following description, the operation of each part configuring the substrate processing apparatus 1 is controlled by the controller 124.

[0067] In the present embodiment, as one example, a case where, for example, a silane-based gas is supplied as a film formation raw material gas, which is one of film formation gases, and a gas containing one kind of dopant, i.e., phosphorus (P), is supplied as a dopant gas, which is one of film formation gases, to form a polysilicon film on the wafer 200 will be described.

[0068] In the present embodiment, as one example, a case where a polysilicon film having a thickness of, for example, 14 μm is formed as a film having a desired thickness on the wafer 200 will be described. Note that the case where a polysilicon film having a thickness other than 14 μm is used as a film having a desired thickness is not excluded.

[0069] In the present specification, the meaning of the term "wafer" includes a wafer itself and a laminate of a wafer and a predetermined layer or film formed on the surface thereof. In the present specification, the meaning of the term "surface of a wafer" includes a surface of a wafer itself and a surface of a predetermined layer or the like formed on a wafer. In the present specification, the meaning of "forming a predetermined layer on a wafer" includes directly forming a predetermined layer on the surface of a wafer itself and forming a predetermined layer on a layer or the like formed on a wafer. In the present specification, the meaning of the term "substrate" is the same as that of "wafer".

[0070] (Crystal wafer loading: S102)

[0071] The substrate transfer mechanism 112 is used to load the wafers 200 from the cassettes 100 on the transfer shelves 123 into the boat 217 in the standby chamber 141 (wafer loading). Specifically, for example, five wafers 200 are loaded one by one from the cassettes 100 on the transfer shelves 123 into the substrate mounting portion 222 of the boat 217 using five tongs 111. This process is continued until all of the predetermined number of wafers 200 (for example, 100 to 200 wafers 200) are loaded into the boat 217.

[0072] (boat introduction: S104)

[0073] After that, the furnace door 116 is moved, and the lower end opening of the manifold 209 is opened (gate opening). Then, as shown in FIG. 2, the boat 217 holding the wafers 200 is lifted by the elevator 121 and carried into the processing chamber 201 (boat introduction). In this state, the seal cap 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b. In this way, the wafers 200 are supplied into the processing chamber 201. Figure 2

[0074] (adjustment of pressure and temperature: S106)

[0075] After that, vacuum evacuation (depressurization evacuation) is performed using the vacuum pump 246 to bring the inside of the processing chamber 201, i.e., the space in which the wafers 200 are located, to a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured using the pressure sensor 245, and feedback control is performed on the APC valve 244 based on the measured pressure information. In addition, heating is performed using the heater 207 to bring the wafers 200 in the processing chamber 201 to a desired processing temperature. At this time, the energization state of the heater 207 is feedback controlled based on the temperature information detected by the temperature sensor 263 to bring the inside of the processing chamber 201 to a desired temperature distribution. In addition, rotation of the wafers 200 is started using the rotation mechanism 267. In addition, the valves 243c, 243d are opened, and supply of inert gas into the processing chamber 201 via the nozzles 249a, 249b is started, respectively. The evacuation of the processing chamber 201, the heating and rotation of the wafers 200, and the supply of inert gas are all continued at least until the end of the film formation processing (S108) described later.

[0076] (film formation processing: S108)

[0077] ​When the desired pressure and temperature are reached in the processing chamber 201, the valve 243a is opened to flow the source gas into the gas supply pipe 232a. In parallel with this, the valve 243b is opened to flow the dopant gas into the gas supply pipe 232b. The source gas and the dopant gas are each adjusted in flow rate by the MFC 241a and the MFC 241b, and are supplied into the processing chamber 201 via the nozzle 249a and the nozzle 249b, and are exhausted from the exhaust port 231a. At this time, the film formation gas (the source gas and the dopant gas) is supplied to the wafer 200 from the side of the wafer 200 (film formation gas supply) at the same time.

[0078] As the processing conditions at the time of supplying the film formation gas in this step, the following are exemplified:

[0079] Processing temperature: 300 to 700°C

[0080] Processing pressure: 1 to 10,000 Pa

[0081] Source gas supply flow rate: 0.001 to 10 slm

[0082] Dopant gas supply flow rate: 0.0001 to 2 slm

[0083] Source gas and dopant gas supply time: 1 to 1,000 minutes

[0084] Inert gas supply flow rate (for each gas supply pipe): 0.0001 to 10 slm

[0085] Further, in the present specification, a numerical range such as "300 to 700°C" means that the range includes the lower limit value and the upper limit value. Therefore, for example, "300 to 700°C" means "300°C or higher and 700°C or lower". The same applies to other numerical ranges. In the present specification, the processing temperature means the temperature of the wafer 200 or the temperature in the processing chamber 201, and the processing pressure means the pressure in the processing chamber 201. Further, when the supply flow rate includes 0 slm, 0 slm means the case where the gas is not supplied.

[0086] Under the above processing conditions, for the wafer 200, for example, a silane-based gas is supplied as the source gas, and, for example, a P-containing gas is supplied as the dopant gas, so that P-containing silicon (Si) can be deposited on the surface of the wafer 200. Thus, a polysilicon film (hereinafter also referred to as a P-doped Si film, or simply as a Si film) 300 doped with P as a dopant can be formed as a film on the wafer 200 (refer to (a) of FIG. 1, (b) of FIG. 1). Figure 7 Figure 7 Figure 7 ​​As shown in (b), the Si film 300 is formed not only on the wafer 200 but also on the substrate placing portion 222, and the wafer 200 is in a state of being adhered to the boat 217 by the Si film 300. Here, "adhered" means a state in which the wafer 200 is adhered to the boat 217 by the Si film 300, but the wafer 200 can be peeled from the boat 217 by the substrate transfer mechanism 112, and means a state in which "fixed connection" described later is not reached.

[0087] As the source gas, for example, the above-described silane-based gas can be used, which contains Si as a main element constituting a film formed on the wafer 200. As the silane-based gas, for example, a silane (SiH4) gas, a disilane (Si2H6) gas, a trisilane (Si3H8) gas, a tetrasilane (Si4H 10 ) gas, a pentasilane (Si5H 12 ) gas, a hexasilane (Si6H 14 ) gas, or the like, a hydrosilicon gas, can be used. As the source gas, one or more of these gases can be used. The same applies to the film formation processing (S124) described later.

[0088] As the dopant gas, for example, a gas containing either of a Group III element (Group 13 element) and a Group V element (Group 15 element) can be used. As the dopant gas, for example, a gas containing P as a Group V element, such as a phosphine (PH3) gas, or a gas containing arsenic (As) as a Group V element, such as an arsine (AsH3) gas, can be used. In addition, as the dopant gas, a gas containing boron (B) as a Group III element, such as diborane (B2H6) gas or trichloroborane (BC13) gas, can be used. As the dopant gas, one or more of these gases can be used. The same applies to the film formation processing (S124) described later.

[0089] As the inert gas, for example, a rare gas such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), or xenon (Xe) can be used. As the inert gas, one or more of these gases can be used. The same applies to the film formation processing (S124) described later.

[0090] (Film formation processing interruption: S110)

[0091] From the start of the film formation processing, the film formation processing is interrupted during a period until a Si film of a desired thickness, i.e., a thickness of 14 μm, is formed on the wafer 200. More specifically, the film formation processing is interrupted during a period until a film (Si film) of a critical thickness is formed on the wafer 200 from the start of the film formation processing. The "critical thickness" refers to a thickness of a film at which the film cannot be peeled off by the substrate transfer mechanism 112 if the thickness becomes equal to or greater than the thickness. More specifically, the "critical thickness" refers to a thickness of a film (Si film) formed on the wafer 200 at which the wafer 200 and the boat 217 are fixedly connected so that the wafer 200 cannot be peeled off from the boat 217 by the substrate transfer mechanism 112 if the thickness becomes equal to or greater than the thickness. Here, the "peeling processing" refers to processing in which the wafer 200 loaded on the substrate loading portion 222 is lifted up and then lowered to the original position on the substrate loading portion 222. The "fixedly connected" refers to a state in which the wafer 200 and the boat 217 are firmly adhered by the Si film 300 so that the wafer 200 cannot be peeled off from the boat 217 by the substrate transfer mechanism 112.

[0092] In the present embodiment, as an example, a case in which the "film of a critical thickness" is set to a film of a thickness of, for example, 6 μm, and the film formation processing is interrupted when a film of a thickness of, for example, 5 μm is formed before the film of a critical thickness (Si film) is formed on the wafer 200 is described.

[0093] (Boat extraction: S112)

[0094] After that, the sealed lid 219 is lowered by the elevator 121, and the lower end opening of the manifold 209 is opened. Then, the boat 217 is moved from inside the processing chamber 201 to inside the standby chamber 141 (boat extraction). When the boat is extracted, the furnace door gate 116 is moved, and the lower end opening of the manifold 209 is sealed by the furnace door gate 116 (gate closed).

[0095] (Wafer cooling: S114)

[0096] The wafer 200 after the boat extraction is cooled to a predetermined temperature in a state in which the wafer 200 is supported by the boat 217 in the standby chamber 141.

[0097] (Peeling processing: S116)

[0098] After that, the lower surface of the wafer 200 loaded on the substrate loading portion 222 of the boat 217 is inserted into the tweezers 111 of the substrate transfer mechanism 112, and the wafer 200 is lifted up. At this time, the wafer 200 and the boat 217 (substrate loading portion 222) adhered by the Si film 300 are peeled off (see FIG. 6B). Figure 7(c)). In this mode, when the 5 μm-thick Si film 300 is formed on the wafer 200, the supply of the film formation gas is interrupted and the peeling process is performed, so that when a film of a desired thickness (for example, a 14 μm-thick Si film) is formed on the wafer 200 as described later, the film formation process (S108) is performed again, and even if a new Si film is formed on the wafer 200, the fixed connection of the wafer 200 to the boat 217 can be prevented. Thereafter, the wafer 200 peeled from the substrate mounting portion 222 is lowered by the substrate transfer mechanism 112 and is mounted at the original position on the substrate mounting portion 222 (see FIG. 1). The substrate transfer mechanism 112 is then moved to the next wafer 200, and the film formation process is performed again. Figure 7 In addition, the substrate transfer mechanism 112 of this mode is provided with five tweezers 111, and thus the peeling process is performed simultaneously on, for example, five wafers 200, but in the case of the substrate transfer mechanism 112 of the mode of (c) and (d), the peeling process is performed on one wafer 200 at a time. Figure 7 In the mode of (c), the peeling process is performed on one wafer 200 at a time, and in the mode of (d), the peeling process is performed simultaneously on, for example, five wafers 200. Figure 7 In the mode of (c), the peeling process is performed on one wafer 200 at a time, and in the mode of (d), the peeling process is performed simultaneously on, for example, five wafers 200.

[0099] In this step (S116), it is determined by the sensor 119 provided to the substrate transfer mechanism 112 whether the peeling process is successful. The peeling process failure means any one of, for example, breakage of at least one of the boat 217, the substrate transfer mechanism 112, and the wafer 200, and failure of the substrate transfer mechanism 112 to peel the wafer 200 from the boat 217 with a predetermined torque. When the sensor 119 detects the peeling process failure, the subsequent process of the substrate processing sequence is interrupted, the tweezers 111 are retracted from the boat 217, and an alarm is given.

[0100] In addition, when the sensor 119 detects the peeling process failure, the peeling process can be performed again by the tweezers 111, that is, the retry process. The retry process can be performed a predetermined number of times or more. After the retry process is performed, when the sensor 119 detects the success of the peeling process of the retry process, the next step (S118) is entered, and when the peeling process of the retry process is detected to fail, the subsequent process is interrupted, the tweezers 111 are retracted from the boat 217, and an alarm is given. At this time, it is preferable that the next batch process is not performed. In addition, in the retry process, it is not necessary to operate all the five tweezers 111, and for example, only the number of tweezers 111 corresponding to the number of wafers 200 for which the peeling process failure is detected can be operated.

[0101] Here, the peeling processing success of the retry processing means, for example, peeling all the wafers 200 as the retry processing object from the boat 217 in a manner to avoid breakage. The peeling processing failure of the retry processing means, for example, failure to peel at least one wafer 200 from the boat 217 among the wafers 200 as the retry processing object or breakage of the wafer 200 at the time of peeling. When the peeling processing failure of the retry processing is detected, for example, when the number of wafers 200 peeled from the boat 217 among the wafers 200 as the retry processing object is one or more, the wafer 200 is subjected to the next step (S118). At this time, the wafer 200 that failed to be peeled from the boat 217, for example, can be kept in a state of being fixedly connected to the boat 217 and removed from the boat 217 in a predetermined manner.

[0102] (Determination step: S118)

[0103] When the wafer peeling processing (S116) is completed, the above series of processing (S104 to S116) is regarded as one cycle, and it is determined whether the one cycle is performed a predetermined number of times (two times), that is, whether the thickness of the film formed in the film forming processing (S108) reaches 10 μm. Also, if the predetermined number of times (two times) is not performed, the one cycle from the boat introduction (S104) to the peeling processing (S116) is repeated. On the other hand, when it is determined that the predetermined number of times is performed, the next step (S120) is entered.

[0104] Thereafter, the boat 217 is carried into the processing chamber 201 (boat introduction: S120) by the same processing steps as those of the above boat introduction (S104), and the pressure adjustment and the temperature adjustment in the processing chamber 201 (pressure adjustment and temperature adjustment: S122) are performed by the same processing steps and processing conditions as those of the above pressure adjustment and temperature adjustment (S106).

[0105] (Film forming processing: S124)

[0106] Thereafter, the wafer 200 is supplied with the film forming gas (raw material gas, dopant gas) by the same processing steps as those of the above film forming processing (S108).

[0107] As the processing conditions at the time of supplying the film forming gas in this step, the following are exemplified:

[0108] Raw material gas and dopant gas supply time: 400 to 800 minutes. Other processing conditions can be the same as those at the time of supplying the film forming gas in the film forming processing (S108).

[0109] As described above, since the Si film of 10 μm in thickness has been formed on the wafer 200, in order to form the Si film of 14 μm in thickness which is the required thickness, in this step, the wafer 200 is supplied with the film forming gas under the above-mentioned conditions, thereby forming the Si film of 4 μm in thickness which is the remaining thickness and adjusting the film thickness.

[0110] After that, the boat 217 is moved from the processing chamber 201 to the standby chamber 141 by the same processing step as the boat extraction (S112) described above (boat extraction: S126), and the processed wafer 200 is cooled to a predetermined temperature in the standby chamber 141 by the same processing step and processing conditions as the wafer cooling (S114) described above (wafer cooling: S128).

[0111] (wafer unloading: S130)

[0112] After that, the processed wafer 200 is unloaded from the substrate mounting portion 222 provided in the boat 217 in the standby chamber 141 to the wafer cassette 100 on the transfer shelf 123 by the substrate transfer mechanism 112 (wafer unloading). Specifically, for example, 5 tweezers 111 are used to transport 5 wafers 200 from the substrate mounting portion 222 of the boat 217 to the wafer cassette 100 on the transfer shelf 123. This processing is performed until the unloading of all the wafers 200 (for example, 100 to 200 wafers 200) from the boat 217 is completed. Then, the substrate processing sequence is ended.

[0113] (5) Effects of the present embodiment

[0114] According to the present embodiment, one or more of the following effects are obtained.

[0115] (a) From the start of the film forming processing, at least once during the period until the film of the required thickness is formed on the wafer 200, the implementation of the film forming processing is interrupted, and the peeling processing of the wafer 200 mounted on the substrate mounting portion 222 is performed, thereby preventing the fixed connection of the wafer 200 to the boat 217 and preventing the problem that the wafer 200 cannot be peeled from the boat 217 after the film of the required thickness is formed on the wafer 200.

[0116] (b) From the start of the film forming processing to the period until the film of the required thickness is formed on the wafer 200, the cycle of the processing of supplying the film forming gas, the processing of interrupting the supply of the film forming gas before the film of the critical thickness is formed on the wafer 200, and the peeling processing is performed a predetermined number of times in sequence, thereby reliably preventing the fixed connection of the wafer 200 to the boat 217.

[0117] In the storage device 124c of the controller 124, a process recipe in which the steps or conditions of the above-described substrate processing (e.g., S102 to S130) are described is stored in a readable manner, so that the fixed connection of the wafer 200 to the boat 217 can be reliably prevented and a film of a desired thickness can be formed on the wafer 200 by reading the process recipe and performing it once. As a result, the operation of the film formation processing can be easily performed.

[0118] (c) After the peeling processing, i.e., the wafer 200 placed on the substrate placement portion 222 is lifted by the substrate transfer mechanism 112, only the processing of lowering to the original position on the substrate placement portion 222 is performed, and the unloading, loading, or the like of the wafer 200 is not performed, so that the time required for the substrate processing process can be shortened and the productivity can be improved. The "unloading" herein means that the processed wafer 200 is transported from the substrate placement portion 222 provided in the boat 217 in the standby chamber 141 to the wafer cassette 100 on the transfer shelf 123 by the substrate transfer mechanism 112. The "loading" means that the unprocessed wafer 200 is transported from the wafer cassette 100 on the transfer shelf 123 to the boat 217 in the standby chamber 141 by the substrate transfer mechanism 112.

[0119] (d) The substrate transfer mechanism 112 is provided with a plurality of tweezers 111, and the peeling processing is performed on a plurality of wafers 200 at the same time, so that the time required for the substrate processing process can be shortened and the productivity can be improved.

[0120] (e) During the peeling processing, when the sensor 119 provided in the substrate transfer mechanism 112 detects a failure in the peeling processing, the subsequent processing is interrupted, so that the substrate quality and the production efficiency can be improved. In addition, by performing an alarm notification, the operator can be made aware of the abnormality. Furthermore, by performing a retry processing, the fixed connection of the wafer 200 to the boat 217 can be reliably prevented, and the loss of the wafer 200 can be suppressed.

[0121] <Other Embodiments of the Present Disclosure>

[0122] The embodiments of the present disclosure have been described above. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0123] In the above-described embodiments, an example in which a film is formed using a batch-type substrate processing apparatus 1 that processes a plurality of substrates at the same time has been described. The present disclosure is not limited to the above-described embodiments, and is also applicable to a case where a film is formed using a single-wafer-type substrate processing apparatus that processes one or a few substrates at the same time. When a film is formed using a single-wafer-type substrate processing apparatus, the peeling processing is preferably performed in a processing container. Specifically, the film formation processing is performed in a state where a wafer is placed on a substrate placement portion (pedestal) provided in the processing container. As described above, the substrate placement portion is provided in the processing container, and the wafer is placed on the substrate placement portion. The peeling processing is performed on the wafer placed on the substrate placement portion. After the peeling processing, the wafer is lowered to the original position on the substrate placement portion, and the wafer is unloaded from the substrate placement portion. The wafer is then loaded on the substrate placement portion again, and the film formation processing is performed again. The film formation processing is repeated until the film of a desired thickness is formed on the wafer. The wafer is then unloaded from the substrate placement portion, and the wafer is transferred to the outside of the processing container. The wafer is then unloaded from the substrate placement portion, and the wafer is transferred to the outside of the processing container. Figure 8As shown, a substrate moving mechanism such as a lift pin is provided in the processing container, which lifts the wafer placed on the substrate placing portion after placing the wafer on the substrate placing portion, and then lowers to the original position on the substrate placing portion. After the film formation processing is performed, a peeling processing is performed, that is, the wafer on the substrate placing portion is lifted by the substrate moving mechanism, and then lowered to the original position on the substrate placing portion. By repeating the film formation processing and the peeling processing a predetermined number of times, a film of a desired thickness can be formed on the wafer. By performing the peeling processing in the processing container in this way, the time required for the substrate processing procedure can be shortened, and the productivity can be improved.

[0124] In addition, in the above-described mode, an example in which a film is formed by the substrate processing apparatus having the processing furnace of the hot wall type is described. The present disclosure is not limited to the above-described mode, and can be applied to a case in which a film is formed by a substrate processing apparatus having a processing furnace of the cold wall type.

[0125] In the case of using these substrate processing apparatuses, each processing can be performed by the same processing steps and processing conditions as in the above-described mode, and the same effects as in the above-described mode can be obtained.

[0126] In the above-described mode, the peeling processing is predetermined to be processing in which the wafer 200 placed on the substrate placing portion 222 by the substrate transfer mechanism 112 is lifted and then lowered to the original position on the substrate placing portion 222, but the present disclosure is not limited thereto. For example, the peeling processing can be processing in which the wafer 200 placed on the substrate placing portion 222 by the substrate transfer mechanism 112 is misaligned and moved on the substrate placing portion 222, and then misaligned again and returned to the original position on the substrate placing portion 222. In the above-described peeling processing (S116), at least any one of these peeling processings can be employed. The same effects as in the above-described mode can be obtained in these cases as well.

[0127] In addition, similarly, the peeling processing can be processing in which the wafer 200 placed on the substrate placing portion 222 by the substrate transfer mechanism 112 is unloaded and then loaded to the original position on the substrate placing portion 222. In this case, the effects of the above-described mode can be reliably obtained.

[0128] In the above-described mode, an example in which a conductive polysilicon film doped with a dopant is formed on the wafer 200 is described, but the present disclosure is not limited thereto. The present disclosure is also applicable, for example, to a case where a conductive amorphous silicon film (a-Si film, amorphous Si film), a conductive single-crystal silicon film (single-crystal Si film), or the like doped with a dopant is formed on the wafer 200. Further, the present disclosure is also applicable to a case where a non-doped polysilicon film, a non-doped amorphous silicon film, a non-doped single-crystal silicon film is formed on the wafer 200 without using a dopant gas. Further, as the film formation gas, in addition to the source gas and the like, a reaction gas such as a nitrogen (N)-containing gas, an oxygen (O)-containing gas, a carbon (C)-containing gas, a gas containing N and C, a boron (B)-containing gas, or the like can be used to form a multi-component Si film such as a silicon nitride film (SiN film), a silicon oxide film (SiO film), a silicon carbide film (SiC film), a silicon carbon nitride film (SiCN film), a silicon oxynitride film (SiON film), a silicon oxycarbide film (SiOC film), a silicon oxycarbon nitride film (SiOCN film), a silicon carbon boron nitride film (SiBCN film), a silicon boron nitride film (SiBN film), or the like on the wafer 200, and the present disclosure is also applicable in this case. The processing steps and processing conditions when supplying various film formation gases can be the same as those in the above-described mode, for example. The same effects as those in the above-described mode can be obtained in this case as well.

[0129] In the above-described mode, an example in which the film thickness is adjusted in the last (third) film formation processing when a film of a desired thickness is formed on the wafer 200 is described, but the present disclosure is not limited thereto. For example, the film thickness can be adjusted in either of the first film formation processing and the second film formation processing.

[0130] In the above-described mode, an example of a CVD (chemical vapor deposition) process in which a plurality of film formation gases are simultaneously and continuously supplied into the processing chamber 201 in the film formation processing (S108, S124) is described, but the present disclosure is not limited thereto. For example, it can be a periodic CVD process in which the film formation gas is supplied intermittently. Further, for example, it can be an alternate supply process in which a process of alternately supplying the source gas and the above-described reaction gas is repeated. That is, the source gas supply → purge → reaction gas supply → purge can be performed as one cycle, and the cycle can be performed a predetermined number of times. In these cases, for example, a cycle in which the Si-containing layer is grown by 250 nm in one cycle can be repeated 20 times, and thus a Si-containing film having a thickness of 5 μm can be formed.

[0131] Further, in the case of the periodic CVD process or the alternate supply process, the purge and vacuum exhaust can be performed as one cycle, and the cycle can be repeated. In this case, an effect of improving the in-wafer plane uniformity and the like can be obtained.

[0132] As for the recipe which describes the above-mentioned steps or conditions and the like and is used for each process, the recipe is preferably prepared for each process content respectively and stored in the storage device 124c via the electronic communication line or the external storage device 126. Also, preferably, when each process is started, the CPU 124a selects an appropriate recipe from the plurality of recipes stored in the storage device 124c in accordance with the process content as appropriate. Thus, it is possible to form films of various types, composition ratios, film qualities, and film thicknesses with good reproducibility using one substrate processing apparatus. In addition, it is possible to reduce the burden on the operator and prevent operational errors, and it is possible to start each process promptly.

[0133] The above-mentioned recipe is not limited to a newly created case, and for example, it can be prepared by changing an existing recipe already installed in the substrate processing apparatus. When the recipe is changed, the changed recipe can be installed in the substrate processing apparatus via the electronic communication line or a storage medium in which the recipe is stored. In addition, it is also possible to operate the input / output device 125 provided in the existing substrate processing apparatus and directly change the existing recipe already installed in the substrate processing apparatus.

[0134] The above-mentioned modes can be used in combination as appropriate. The process steps and process conditions at this time can be the same as the process steps and process conditions of the above-mentioned modes, for example.

[0135] <Preferred Embodiment of the Present Disclosure>

[0136] The following describes a preferred embodiment of the present disclosure.

[0137] (Note 1)

[0138] According to one embodiment of the present disclosure, there is provided a substrate processing apparatus including:

[0139] a substrate holder provided with a substrate placement portion on which a substrate is placed;

[0140] a substrate transfer mechanism which loads or unloads the substrate with respect to the substrate placement portion;

[0141] a process container which accommodates the substrate holder holding the substrate;

[0142] a film formation gas supply system which supplies a film formation gas to the substrate in the process container; and

[0143] a control portion which can control the substrate transfer mechanism and the film formation gas supply system so that, during a period from the start of a film formation process of supplying the film formation gas to the substrate to the formation of a film of a desired thickness on the substrate, the implementation of the film formation process is interrupted at least once, and a peeling process of the substrate placed on the substrate placement portion is performed.

[0144] (Note 2)

[0145] The substrate processing apparatus according to Note 1, wherein

[0146] The control section is capable of controlling the substrate transfer mechanism and the film formation gas supply system such that the processes of sequentially supplying the film formation gas, interrupting the supply of the film formation gas before forming a film of a critical thickness on the substrate, and performing the peeling process are executed a predetermined number of times during a period from starting the film formation process to forming a film of a desired thickness on the substrate.

[0147] (Note 3)

[0148] The substrate processing apparatus according to Note 2, wherein

[0149] The critical thickness refers to a thickness of a film that cannot be peeled by the peeling process using the substrate transfer mechanism if the film has a thickness of the critical thickness or more.

[0150] (Note 4)

[0151] The substrate processing apparatus according to any one of Notes 1 to 3, wherein

[0152] The peeling process refers to a process in which the substrate placed on the substrate placement section is lifted by the substrate transfer mechanism and then lowered to the original position on the substrate placement section.

[0153] (Note 5)

[0154] The substrate processing apparatus according to any one of Notes 1 to 3, wherein

[0155] The peeling process refers to a process in which the substrate placed on the substrate placement section is moved by the substrate transfer mechanism to be offset on the substrate placement section and then offset again to return to the original position on the substrate placement section.

[0156] (Note 6)

[0157] The substrate processing apparatus according to any one of Notes 1 to 3, wherein

[0158] The peeling process refers to a process in which the substrate placed on the substrate placement section is unloaded by the substrate transfer mechanism and then loaded to the original position on the substrate placement section.

[0159] (Note 7)

[0160] The substrate processing apparatus according to any one of Notes 1 to 6, wherein

[0161] The peeling treatment is a treatment that can be performed simultaneously on a plurality of substrates.

[0162] (Paragraph 8)

[0163] The substrate processing apparatus according to any one of Paragraphs 1 to 6, wherein

[0164] The peeling treatment is a treatment that can be performed in the processing container.

[0165] (Paragraph 9)

[0166] The substrate processing apparatus according to any one of Paragraphs 1 to 8, wherein

[0167] The substrate transfer mechanism includes a sensor that detects whether the peeling treatment is successful,

[0168] The control section can cause a subsequent treatment to be interrupted when the sensor detects a failure of the peeling treatment.

[0169] (Paragraph 10)

[0170] The substrate processing apparatus according to any one of Paragraphs 1 to 9, wherein

[0171] The substrate transfer mechanism includes a sensor that detects whether the peeling treatment is successful,

[0172] The control section can perform notification using an alarm when the sensor detects a failure of the peeling treatment.

[0173] (Paragraph 11)

[0174] According to another aspect of the present disclosure, there is provided a method for manufacturing a semiconductor device, including:

[0175] a step of loading a substrate into a substrate placement portion provided to a substrate holder by a substrate transfer mechanism;

[0176] a step of transporting the substrate holder holding the substrate into a processing container; and

[0177] a step of supplying a film formation gas to the substrate in the processing container,

[0178] In the step of supplying the film formation gas to the substrate, the supply of the film formation gas is interrupted at least once during a period from the start of the supply of the film formation gas to the substrate to the formation of a film of a desired thickness on the substrate, and a peeling treatment of a substrate placed on the substrate placement portion is performed.

[0179] (Paragraph 12)

[0180] According to still another aspect of the present disclosure, there is provided a storage medium storing a program for causing a substrate processing apparatus to execute the following steps by a computer:

[0181] a step of loading a substrate to a substrate placement portion provided to the substrate holder by the substrate transfer mechanism;

[0182] a step of transporting the substrate holder holding the substrate into a processing container; and

[0183] a step of supplying a film formation gas to the substrate in the processing container,

[0184] in the step of supplying the film formation gas to the substrate, at least once, during a period from a start of the supply of the film formation gas to the substrate to a formation of a film of a desired thickness on the substrate, the supply of the film formation gas is interrupted, and a peeling process of the substrate placed on the substrate placement portion is performed.

Claims

1. A substrate processing apparatus characterized by comprising: Having: a substrate holder provided with a substrate placement portion that places a plurality of substrates in multiple layers; a substrate transfer mechanism that loads or unloads the substrates with respect to the substrate placement portion; a processing container that houses the substrate holder holding the substrates; a film formation gas supply system that supplies a film formation gas to the substrates in the processing container; and a control portion that is provided in advance with a critical thickness at which a film formed on the substrates cannot be peeled off from the substrate placement portion by the substrate transfer mechanism, the control portion is configured to control the substrate transfer mechanism and the film formation gas supply system so that, during a period from the start of a film formation process of supplying the film formation gas to the substrates to the formation of a film of a desired thickness on the substrates, the implementation of the film formation process is interrupted at least once by interrupting the supply of the film formation gas before the formation of a film of the critical thickness on the substrates, and a peeling process is performed that only performs, after lifting the substrates placed on the substrate placement portion by the substrate transfer mechanism, a process of lowering the substrates to an original position on the substrate placement portion without transporting the substrates.

2. The substrate processing apparatus according to claim 1, wherein the control portion is capable of controlling the substrate transfer mechanism and the film formation gas supply system so that a cycle of the film formation process, a process of interrupting the supply of the film formation gas, and the peeling process is performed a predetermined number of times in succession.

3. The substrate processing apparatus according to claim 1, wherein the peeling process is a process that can be performed simultaneously on a plurality of substrates.

4. The substrate processing apparatus according to claim 1, wherein the peeling process is a process that can be performed in the processing container.

5. The substrate processing apparatus according to claim 1, wherein the substrate transfer mechanism is provided with a sensor that detects whether the peeling process is successful, the control portion is capable of interrupting a subsequent process when the sensor detects a failure of the peeling process.

6. The substrate processing apparatus according to claim 5, wherein the control portion is capable of performing notification by an alarm when the sensor detects a failure of the peeling process.

7. The substrate processing apparatus according to claim 5, wherein the failure of the peeling process indicates that at least one of the substrate holder, the substrate transfer mechanism, and the substrate is damaged.

8. The substrate processing apparatus according to claim 5, wherein the failure of the peeling process indicates that the substrate cannot be peeled off from the substrate holder with a predetermined torque of the substrate transfer mechanism.

9. The substrate processing apparatus according to claim 5, wherein the control portion is capable of performing a retry process by the substrate transfer mechanism when the sensor detects a failure of the peeling process.

10. The substrate processing apparatus according to claim 9, wherein the retry process can be performed a predetermined number of times or more.

11. The substrate processing apparatus according to claim 10, wherein The control section interrupts a subsequent process when the sensor detects a failure of the peeling process in the retry process.

12. The substrate processing apparatus according to claim 10, wherein The control section continues a subsequent process when the sensor detects a success of the peeling process in the retry process.

13. A method of manufacturing a semiconductor device, characterized by having: a step of loading a substrate to a substrate placement portion provided to a substrate holder and on which a plurality of substrates are placed in multiple layers, by a substrate transfer mechanism; a step of transporting the substrate holder holding the substrate into a processing vessel; and a step of supplying a film formation gas to the substrate in the processing vessel, in the step of supplying the film formation gas to the substrate, by a control section which is provided with a critical thickness at which peeling of a film of the substrate from the substrate placement portion by the substrate transfer mechanism cannot be achieved in advance, during a period from start of film formation processing of supplying the film formation gas to the substrate to formation of a film of a desired thickness on the substrate, implementation of the film formation processing is interrupted at least once by interrupting supply of the film formation gas before formation of the film of the critical thickness on the substrate, and a peeling process is performed which only performs, after lifting the substrate placed on the substrate placement portion by the substrate transfer mechanism, lowering the substrate to an original position on the substrate placement portion without transporting the substrate.

14. A storage medium which is a computer-readable storage medium, characterized by storing a program which causes a substrate processing apparatus to execute the following steps by a computer: a step of loading a substrate to a substrate placement portion provided to a substrate holder and on which a plurality of substrates are placed in multiple layers, by a substrate transfer mechanism; a step of transporting the substrate holder holding the substrate into a processing vessel; and a step of supplying a film formation gas to the substrate in the processing vessel, in the step of supplying the film formation gas to the substrate, by a computer which is provided with a critical thickness at which peeling of a film of the substrate from the substrate placement portion by the substrate transfer mechanism cannot be achieved in advance, during a period from start of film formation processing of supplying the film formation gas to the substrate to formation of a film of a desired thickness on the substrate, implementation of the film formation processing is interrupted at least once by interrupting supply of the film formation gas before formation of the film of the critical thickness on the substrate, and a peeling process is performed which only performs, after lifting the substrate placed on the substrate placement portion by the substrate transfer mechanism, lowering the substrate to an original position on the substrate placement portion without transporting the substrate.

Images