Heavy metal crystallization treatment apparatus for waste liquid and use method

Abstract

The application discloses a kind of waste liquid heavy metal crystallization processing equipment and use method, including first crystallization area, second crystallization area, vortex area, separation area and barrier area, first crystallization area is equipped with waste liquid inlet, reagent inlet, first crystallization outlet and first carrier inlet, second crystallization area is equipped with second crystallization outlet and second carrier inlet, first crystallization area and second crystallization area are communicated to make waste liquid can be circulated between first crystallization area and second crystallization area, and the flowing direction in first crystallization area and second crystallization area is opposite;Vortex area is connected between first crystallization area and second crystallization area, separation area is connected between first crystallization area and vortex area, separation area is equipped with liquid outlet, and liquid outlet is used to discharge treated waste liquid;Barrier area is arranged between first crystallization area and separation area, and barrier area is used to prevent the precipitated crystal of first crystallization area in first crystallization area.The processing efficiency of the processing equipment of the application is high, processing time is short, and cost is low.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of water treatment, in particular to a heavy metal crystallization treatment equipment for waste liquid and a corresponding use method. BACKGROUND

[0002] In the process of water treatment, heavy metals are potential hazardous pollutants. For the removal of metal ions in wastewater, the traditional treatment methods mainly include ion exchange method, chemical precipitation method, electrolysis method, reverse osmosis method, etc., among which the chemical precipitation method is the most common one. However, the traditional chemical precipitation treatment method has problems such as expensive chemical reagents, and a large amount of sludge difficult to dewater after treatment in the process of removing metal ions.

[0003] The induced crystallization process is a process in which heavy metal ions are converted into precipitates and attached to carriers for removal through a crystallization process based on chemical precipitation reaction. Compared with the traditional chemical precipitation method, the induced crystallization method not only inherits the advantages of rapid reaction and high removal rate of the precipitation process, but also avoids the problems of generating a large amount of sludge and causing secondary pollution. At the same time, the water content of the crystallization product is not high, and there is no need to add dewatering treatment, which saves economic cost and solves the problem of sludge generation from the source, thereby reducing or solving the burden of enterprises.

[0004] However, at present, the induced crystallization process is mostly used in wastewater treatment such as phosphorus removal, fluorine removal and water softening, and the process of induced crystallization for heavy metals in wastewater is not mature. Some processes for heavy metal crystallization treatment also have problems such as low recovery rate, low treatment efficiency and long treatment time. SUMMARY

[0005] The present application aims to at least solve one of the technical problems in the related art to some extent.

[0006] To this end, the present application provides a heavy metal crystallization treatment equipment for waste liquid, which has high treatment efficiency, short treatment time and low cost.

[0007] The present application also provides a use method of the heavy metal crystallization treatment equipment for waste liquid.

[0008] The heavy metal crystallization treatment equipment for waste liquid provided by the present application comprises:

[0009] a first crystallization zone and a second crystallization zone, the first crystallization zone being provided with a waste liquid inlet, a chemical agent inlet, a first crystallization outlet and a first carrier inlet, the second crystallization zone being provided with a second crystallization outlet and a second carrier inlet, the waste liquid inlet being configured to allow the waste liquid to enter the first crystallization zone, the chemical agent inlet being configured to allow the chemical agent to be added, the first crystallization outlet and the second crystallization outlet being configured to allow the precipitated crystals to be discharged, and the first carrier inlet and the second carrier inlet being configured to allow the crystallization carrier to be injected;

[0010] the first crystallization zone and the second crystallization zone being connected to allow the waste liquid to flow between the first crystallization zone and the second crystallization zone in opposite directions;

[0011] a vortex zone connected between the first crystallization zone and the second crystallization zone, the vortex zone being configured to disturb the waste liquid and to generate vortexes in the waste liquid entering the second crystallization zone to accelerate crystallization;

[0012] a separation zone connected between the first crystallization zone and the vortex zone, the separation zone being provided with a liquid discharge outlet configured to discharge the treated waste liquid;

[0013] a barrier zone provided between the first crystallization zone and the separation zone, the barrier zone being configured to prevent the precipitated crystals in the first crystallization zone from entering the separation zone.

[0014] The waste liquid heavy metal crystallization treatment device according to the embodiments of the present application has high treatment efficiency, short treatment time and low cost.

[0015] In some embodiments, the second crystallization zone has a plurality of second crystallization zones, and the plurality of second crystallization zones are arranged on the outer circumferential side of the first crystallization zone and are spaced apart along the circumference of the first crystallization zone.

[0016] In some embodiments, the vortex zone has a plurality of vortex zones, and the plurality of vortex zones are connected one by one between the separation zone and the plurality of second crystallization zones.

[0017] In some embodiments, the barrier zone is provided in a space surrounded by the plurality of vortex zones.

[0018] In some embodiments, the waste liquid heavy metal crystallization treatment device comprises a first pipeline, one end of the first pipeline being connected to the second crystallization zone, and the other end of the first pipeline being connected to the waste liquid inlet.

[0019] In some embodiments, the separation zone is arranged above the vortex zone, the vortex zone is arranged above the second crystallization zone, the waste liquid inlet and the first crystallization outlet are arranged at the bottom of the first crystallization zone, and the second crystallization outlet is arranged at the bottom of the second crystallization zone.

[0020] In some embodiments, the barrier zone is provided with a plurality of inclined pipes connected between the first crystallization zone and the separation zone and used for flowing the waste liquid in the first crystallization zone into the separation zone, and the plurality of inclined pipes extend upwardly.

[0021] In some embodiments, a plurality of flocculation balls are arranged in the vortex zone and used for forming vortex of the waste liquid when flowing through.

[0022] In some embodiments, the waste liquid heavy metal crystallization treatment device comprises a second pipeline in communication with the first crystallization zone, and the second pipeline has a first inlet and a second inlet, the first inlet forms the medicament inlet, and the second inlet is used for backwashing.

[0023] The use method of the embodiment of the present application comprises the following steps:

[0024] S1: adding chemical medicament and crystallization carrier and feeding waste liquid to start heavy metal ion treatment;

[0025] S2: after the crystallization carrier in the second crystallization zone is saturated, opening the second crystallization outlet to discharge the precipitated crystals in the second crystallization zone, and then re-feeding the crystallization carrier into the second crystallization zone;

[0026] S3: after the crystallization carrier in the first crystallization zone is saturated, opening the first crystallization outlet to discharge the precipitated crystals in the first crystallization zone;

[0027] S4: backwashing by using the second inlet, and then re-feeding the crystallization carrier into the first crystallization zone. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 is a schematic diagram of a waste liquid heavy metal crystallization treatment device of an embodiment of the present application Figure One .

[0029] Figure 2 is a schematic diagram of a waste liquid heavy metal crystallization treatment device of an embodiment of the present application Figure Two .

[0030] REFERENCE SIGNS:

[0031] first crystallization zone 1; waste liquid inlet 11; second pipeline 12; first inlet 121; second inlet 122; first carrier inlet 13; first crystallization outlet 14;

[0032] Second crystallization zone 2; Second crystallization outlet 21; Second carrier inlet 22;

[0033] Vortex zone 3; Flocculation balls 31;

[0034] Separation zone 4; Drain outlet 41;

[0035] Barrier zone 5; Inclined tube 51;

[0036] Pipeline 6. Detailed Implementation

[0037] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0038] like Figure 1 As shown, the waste liquid heavy metal crystallization treatment device of this invention includes a first crystallization zone 1, a second crystallization zone 2, a vortex zone 3, a separation zone 4, and a barrier zone 5.

[0039] The first crystallization region 1 can be a cylindrical structure, for example, a metal cylinder, and the first crystallization region 1 generally extends in the vertical direction. Figure 2 As shown, the first crystallization zone 1 is provided with a waste liquid inlet 11, a reagent inlet, a first crystallization outlet 14 and a first carrier inlet 13. The waste liquid inlet 11, the reagent inlet and the first crystallization outlet 14 can all be located at the bottom of the first crystallization zone 1, and the first carrier inlet 13 can be located at the top of the first crystallization zone 1.

[0040] It should be noted that the waste liquid in this embodiment can be raw water (wastewater containing metal ions), specifically industrial wastewater, domestic sewage, etc. Waste liquid inlet 11 allows waste liquid to be introduced into the first crystallization zone 1. Chemical reagent inlet allows chemical reagents to be introduced into the first crystallization zone 1; the chemical reagents can specifically be sodium carbonate solution or sodium hydroxide solution, etc.

[0041] The first carrier inlet 13 allows the crystallization carrier to be introduced into the first crystallization zone 1. The crystallization carrier can be quartz sand with a particle size range of 0.5 mm to 1 mm. The first crystallization outlet 14 allows the precipitated crystals in the first crystallization zone 1 to be discharged from the first crystallization zone 1.

[0042] The second crystallization region 2 can also be a cylindrical structure; for example, the second crystallization region 2 can be a metal cylinder, and the second crystallization region 2 generally extends in the vertical direction. Figure 2As shown, the second crystallization area 2 is provided with a second crystallization outlet 21 and a second carrier inlet 22, wherein the second crystallization outlet 21 is used for discharging the precipitated crystals out of the second crystallization area 2, and the second carrier inlet 22 is used for injecting the crystallization carrier into the second crystallization area 2. The crystallization carrier can also be quartz sand.

[0043] The first crystallization area 1 and the second crystallization area 2 are communicated to allow the waste liquid to flow circularly between the first crystallization area 1 and the second crystallization area 2, and the flow directions in the first crystallization area 1 and the second crystallization area 2 are opposite. For example, the top end of the first crystallization area 1 can be communicated with the top end of the second crystallization area 2, the bottom end of the first crystallization area 1 can be communicated with the bottom end of the second crystallization area 2, the first crystallization area 1 and the second crystallization area 2 can be separated by a partition plate, and the waste liquid in the first crystallization area 1 can flow in a direction from bottom to top, and the waste liquid in the second crystallization area 2 can flow in a direction from top to bottom, so that a circular flow channel can be formed between the first crystallization area 1 and the second crystallization area 2, i.e. the waste liquid can flow circularly between the first crystallization area 1 and the second crystallization area 2.

[0044] The vortex area 3 is connected between the first crystallization area 1 and the second crystallization area 2, and is used for disturbing the waste liquid and making the waste liquid entering the second crystallization area 2 swirl to accelerate crystallization. Specifically, as shown in Figure 1 and Figure 2 , the vortex area 3 can be arranged at the top of the second crystallization area 2, and the vortex area 3 can be a cavity structure. The outlet of the first crystallization area 1 can be communicated with the inlet of the vortex area 3, and the inlet of the second crystallization area 2 can be communicated with the outlet of the vortex area 3. A plurality of flocculation balls 31 can be arranged in the vortex area 3, and the flocculation balls 31 can be ABS flocculation balls. When the waste liquid flows into the vortex area 3, the flocculation balls 31 can make the waste liquid form vortex, so as to disturb the waste liquid.

[0045] The separation area 4 is connected between the first crystallization area 1 and the vortex area 3, for example, as shown in Figure 1 , the separation area 4 can also be a cavity structure, and the separation area 4 can be arranged above the first crystallization area 1 and the second crystallization area 2, wherein the top end of the first crystallization area 1 can be directly connected with the separation area 4, and the vortex area 3 can be connected between the separation area 4 and the second crystallization area 2.

[0046] As shown in Figure 2 , the separation area 4 can be provided with a liquid outlet 41, and the liquid outlet 41 can be located at the right top of the separation area 4. When the heavy metal ion crystallization treatment of the waste liquid is completed, the liquid outlet 41 can be opened to discharge the waste liquid in the separation area 4. It should be noted that since the separation area 4 is arranged at the top, the precipitated crystals in the waste liquid can be self-settled under the action of gravity, and the liquid outlet 41 arranged near the top can further ensure that the waste liquid flowing out is the waste liquid after the heavy metal ion treatment.

[0047] The barrier zone 5 is arranged between the first crystallization zone 1 and the separation zone 4, and the barrier zone 5 is used to prevent the precipitated crystals in the first crystallization zone 1 from flowing into the first crystallization zone 1. For example, as shown in Figure 1 the barrier zone 5 can be connected above the first crystallization zone 1, and the separation zone 4 can be connected above the barrier zone 5.

[0048] In use, the waste liquid can be introduced into the first crystallization zone 1, and in the first crystallization zone 1, the waste liquid can be mixed with the chemical reagent, and in the first crystallization zone 1, the heavy metal ions in the waste liquid can be preliminarily crystallized. Then the waste liquid in the first crystallization zone 1 can flow into the barrier zone 5, and in the barrier zone 5, the precipitated crystals in the waste liquid can be prevented from flowing, thereby avoiding the situation that the precipitated crystals circulate.

[0049] The waste liquid flowing out of the barrier zone 5 can first flow into the separation zone 4, and then can flow into the vortex zone 3, and in the vortex zone 3, the waste liquid can be disturbed and form a vortex, and the waste liquid flowing out of the vortex zone 3 can flow into the second crystallization zone 2, and the remaining heavy metal ions in the waste liquid can be crystallized in the second crystallization zone 2, thereby realizing the removal of the heavy metal ions in the waste liquid. It should be noted that the waste liquid in the second crystallization zone 2 can be reflowed to the first crystallization zone 1, thereby realizing the continuous circulation of the waste liquid.

[0050] The present application is based on the discovery and understanding of the inventors on the following facts and problems:

[0051] The growth rate of the precipitated crystals is affected by the hydraulic load, and the increase of the hydraulic load is beneficial to the precipitation of the crystals, but when the hydraulic load is too large, the precipitated crystals deposited on the surface of the crystal carrier can be separated from the crystal carrier, and the large hydraulic load can make the crystal carrier flow, and the unit area of the carrier is reduced, which is not conducive to the subsequent induced crystallization.

[0052] The waste liquid heavy metal crystallization treatment equipment of the embodiment of the present application adopts the fluidized double circulation, that is, the waste liquid flows through the first crystallization zone 1, and then sequentially enters the vortex zone 3 and the second crystallization zone 2, and then can be circulated to the first crystallization zone 1 again. The waste liquid can produce a micro-vortex flow when flowing from the first crystallization zone 1 to the vortex zone 3, which can increase the disturbance of the waste liquid and slow down the flow speed of the waste liquid, and then immediately enter the second crystallization zone 2, which can promote the secondary nucleation of the crystals. Therefore, when the hydraulic load is low, the present technical solution can solve the problem of slow reaction speed, can speed up the reaction speed, and can reduce the reaction time.

[0053] Since the waste liquid and the precipitant (chemical agent) are fully mixed in the vortex area 3, the deposition amount in the second crystallization area 2 is large, and the system has a high utilization rate and processing efficiency, and is conducive to reducing the processing time.

[0054] In addition, compared with the conventional process for removing metal ions, the technical scheme precipitates the metal ions in the waste liquid by disturbance and addition of crystal seeds, so that the precipitated crystals can be precipitated at a lower supersaturation, thereby reducing the amount of drug input and reducing the cost.

[0055] In some embodiments, the second crystallization area 2 has multiple second crystallization areas 2 arranged along the circumference of the first crystallization area 1.

[0056] For example, as shown in Figure 1 and Figure 2 , the second crystallization area 2 can be provided with two second crystallization areas 2, one of which can be arranged on the left side of the first crystallization area 1, and the other of which can be arranged on the right side of the first crystallization area 1. The waste liquid flowing out of the first crystallization area 1 can flow into the barrier area 5 and the separation area 4 in turn, and then can flow into the two second crystallization areas 2 through the separation area 4, respectively. Thus, on the one hand, it is conducive to the symmetry of the structure and the stability of the operation, and on the other hand, it can improve the processing efficiency and further reduce the processing time.

[0057] It can be understood that in other embodiments, the second crystallization area 2 can also be provided with three, four, five, six or the like, and multiple second crystallization areas 2 are in communication with the first crystallization area 1 and are arranged at equal intervals along the circumference of the first crystallization area 1.

[0058] In some embodiments, the vortex area 3 has multiple vortex areas 3, and the multiple vortex areas 3 are connected one by one between the separation area 4 and the multiple second crystallization areas 2. Specifically, as shown in Figure 1 and Figure 2 , the number of vortex areas 3 can be the same as the number of second crystallization areas 2, for example, the second crystallization area 2 can be provided with two second crystallization areas 2, at this time, the vortex area 3 is also provided with two vortex areas 3, and the two vortex areas 3 can be arranged one by one above the two second crystallization areas 2, and the top end of each vortex area 3 can be in communication with the separation area 4, and the bottom end of each vortex area 3 can be in communication with the corresponding second crystallization area 2. Thus, the waste liquid flowing out of the separation area 4 can first flow into the corresponding vortex area 3, and then flow into the corresponding second crystallization area 2.

[0059] It can be understood that in other embodiments, the vortex area 3 can also be annular structure, the top side of the vortex area 3 can be communicated with the separation area 4, and each second crystallization area 2 can be connected below the vortex area 3.

[0060] In some embodiments, as shown in Figure 1 and Figure 2 , the vortex area 3 can be provided with a plurality of vortex areas 3, and the plurality of vortex areas 3 can be arranged at equal intervals along the circumferential direction, and the blocking area 5 is arranged in the space surrounded by the plurality of vortex areas 3. Thus, the waste liquid flowing out of the blocking area 5 can flow around and flow into the corresponding vortex area 3 through the separation area 4, which can make the flow of the waste liquid symmetrically distributed, thereby ensuring the stability of the movement.

[0061] In some embodiments, as shown in Figure 1 and Figure 2 , the waste liquid heavy metal crystallization treatment equipment includes a first pipeline 6, one end of the first pipeline 6 is communicated with the second crystallization area 2, and the other end of the first pipeline 6 is communicated with the waste liquid inlet 11. In use, the waste liquid in the second crystallization area 2 can flow back to the waste liquid inlet 11 through the first pipeline 6, and then can flow back to the first crystallization area 1 with the waste liquid at the waste liquid inlet 11, thereby realizing the backflow of the waste liquid in the second crystallization area 2 to the first crystallization area 1.

[0062] It should be noted that when the second crystallization area 2 is provided with a plurality of second crystallization areas 2, the first pipeline 6 can also be provided with a plurality of first pipelines 6, at this time, one end of each first pipeline 6 can be communicated with the bottom end of the corresponding second crystallization area 2, and the other end of each first pipeline 6 can be communicated with the waste liquid inlet 11, thereby realizing the backflow of the waste liquid in each second crystallization area 2.

[0063] In some embodiments, as shown in Figure 1 and Figure 2 , the separation area 4 is arranged above the vortex area 3, the vortex area 3 is arranged above the second crystallization area 2, the waste liquid inlet 11 and the first crystallization outlet 14 are arranged at the bottom of the first crystallization area 1, the first carrier inlet 13 is arranged at the top of the first crystallization area 1, the second crystallization outlet 21 is arranged at the bottom of the second crystallization area 2, and the second carrier inlet 22 is arranged at the top of the second crystallization area 2.

[0064] In some embodiments, as shown in Figure 2As shown, the blocking area 5 is provided with a plurality of inclined pipes 51, which are connected between the first crystallization area 1 and the separation area 4 and used for flowing the waste liquid in the first crystallization area 1 into the separation area 4, and the plurality of inclined pipes 51 extend upwardly, for example, the plurality of inclined pipes 51 can be arranged in parallel, and each inclined pipe 51 can extend along a direction from the lower left to the upper right. Thus, when the waste liquid in the crystallization area flows upwardly, the precipitated crystals in the waste liquid can be blocked at the inclined pipes 51 under the action of gravity, so as to avoid the precipitated crystals from entering the circulation.

[0065] In some embodiments, as shown in Figure 1 and Figure 2 , the waste liquid heavy metal crystallization treatment device comprises a second pipeline 12, which can be a three-way pipe, the outlet of the second pipeline 12 can be communicated with the bottom of the first crystallization area 1, and the second pipeline 12 has two inlets, which are a first inlet 121 and a second inlet 122 respectively, wherein the first inlet 121 forms a medicament inlet, and the second inlet 122 is used for backwashing. For example, when the precipitated crystals in the first crystallization area 1 are discharged, the flushing water can be introduced from the second inlet 122.

[0066] A specific example of the waste liquid heavy metal crystallization treatment device of the embodiment of the present application is described below.

[0067] As shown in Figure 1 and Figure 2 . The device mainly comprises a separation area 4, a vortex area 3, a blocking area 5, a first crystallization area 1 and two second crystallization areas 2.

[0068] In use, the crystallization carrier quartz sand can be injected into the first crystallization area 1 and the second crystallization area 2 through the first carrier inlet and the second carrier inlet respectively, wherein the particle size of the quartz sand ranges from 0.5mm to 1mm. Then the wastewater (waste liquid) containing Cu 2+ can be injected through the waste liquid inlet, and the fully diluted precipitant sodium carbonate solution (chemical agent) can be injected through the side first inlet 121. The wastewater and sodium carbonate are mixed in the first crystallization area 1, and after mixing, they enter the left and right two vortex areas 3 through the blocking area 5 respectively, and after being fully mixed in the vortex area 3, they can enter the left and right two second crystallization areas 2 respectively, and then re-circulate back to the middle first crystallization area 1, so as to continuously circulate.

[0069] A plurality of ABS flocculation balls 31 are placed in each vortex area 3. After the wastewater treatment is completed, the wastewater in which the heavy metal ions are removed can be discharged through the liquid outlet of the upper separation area 4. When the crystallization carrier in the first crystallization area 1 is not saturated, the crystallization carriers on both sides of the second crystallization area 2 can first recover the precipitated crystals. Without stopping the operation, the large crystalline particles can be discharged through the second crystallization outlet 21 at the bottom of each second crystallization area 2, and after being discharged, new crystallization carriers can be injected. After the crystallization carrier in the first crystallization area 1 is saturated, the large crystalline particles can be discharged through the first crystallization outlet 14, and the flushing water can be injected through the second inlet for flushing, and after flushing, the crystallization carrier can be re-injected through the first carrier inlet.

[0070] The use method of the embodiment of the application is described below.

[0071] The use method of the embodiment of the application includes the following steps:

[0072] S1: chemical agents and crystallization carriers are added, and waste liquid is introduced to start heavy metal ion treatment. Specifically, the chemical agents can be placed into the first crystallization area 1 from the agent inlet, the crystallization carriers can be placed into the first crystallization area 1 and the second crystallization area 2 from the first carrier inlet 13 and the second carrier inlet 22 respectively, and finally the waste liquid can be introduced into the first crystallization area 1 from the waste liquid inlet 11, which can have a certain liquid pressure to provide driving force for the flow of the waste liquid.

[0073] S2: After the crystallization carrier in the second crystallization area 2 is saturated, the second crystallization outlet 21 is opened to discharge the precipitated crystals in the second crystallization area 2, and then the crystallization carrier is re-injected into the second crystallization area 2. Specifically, under the action of the vortex area 3, the waste liquid forms a vortex, so that the crystallization carrier in the second crystallization area 2 can be saturated before the crystallization carrier in the first crystallization area 1. When saturated, the second crystallization outlet 21 can be opened, so that the precipitated crystals in the second crystallization area 2 can be discharged through the second crystallization outlet 21. After the precipitated crystals are discharged, the second crystallization outlet 21 can be closed, and then new crystallization carriers can be supplemented into the second crystallization area 2 through the second carrier inlet 22, so that the second crystallization area 2 can continue the crystallization operation.

[0074] S3: After the crystallization carrier in the first crystallization area 1 is saturated, the first crystallization outlet 14 is opened to discharge the precipitated crystals in the first crystallization area 1. Specifically, the crystallization carrier in the first crystallization area 1 will be saturated later than the crystallization carrier in the second crystallization area 2. When the first crystallization area 1 is saturated, the second crystallization outlet 21 can be opened, so that the precipitated crystals in the first crystallization area 1 can be discharged through the second crystallization outlet 21.

[0075] S4: backwashing with the second inlet 122 and then re-injecting the crystallization carrier into the first crystallization zone 1. Specifically, when the precipitated crystals in the first crystallization zone 1 are discharged, water for backwashing can be introduced into the first crystallization zone 1 through the second inlet 122, and after the backwashing is completed, new crystallization carrier can be supplemented into the first crystallization zone 1 through the first carrier inlet.

[0076] In the description of the present application, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0077] In addition, the terms "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0078] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected or in communication with each other; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication or interaction relationship of two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0079] In the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can be direct contact between the first and second features, or indirect contact between the first and second features through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be directly above or obliquely above the first feature, or only indicate that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be directly below or obliquely below the first feature, or only indicate that the horizontal height of the first feature is less than that of the second feature.

[0080] In this disclosure, the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" mean that a particular feature, structure, material, or characteristic is included in at least one embodiment or example of the present disclosure. The illustrative appearances of the above-mentioned terms in various places in the specification are not necessarily referred to the same embodiment or example. Moreover, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples. Furthermore, the terminology "comprising" is used in the disclosure as comprising, but not limited to, any indicated features, integers, steps or components. It is also to be understood that the terminology "comprising" can be replaced by the terminology "consisting of" or "consisting essentially of" in some embodiments or examples.

[0081] Although the above-mentioned embodiments have been shown and described, it is to be understood that the above-mentioned embodiments are exemplary, and should not be understood as limiting the present disclosure, and the changes, modifications, replacements and variations of the above-mentioned embodiments made by those skilled in the art are within the protection scope of the present disclosure.

Claims

1. A waste liquid heavy metal crystallization treatment device, characterized in that, Comprising: a first crystallization zone and a second crystallization zone, the first crystallization zone being provided with a waste liquid inlet, a chemical agent inlet, a first crystallization outlet and a first carrier inlet, the second crystallization zone being provided with a second crystallization outlet and a second carrier inlet, the waste liquid inlet being used for the waste liquid to enter the first crystallization zone, the chemical agent inlet being used for adding chemical agents, the first crystallization outlet and the second crystallization outlet being used for discharging precipitated crystals, the first carrier inlet and the second carrier inlet being used for injecting crystallization carriers; the first crystallization zone and the second crystallization zone being communicated to enable the waste liquid to flow circularly between the first crystallization zone and the second crystallization zone, and the flow directions in the first crystallization zone and the second crystallization zone being opposite; a vortex zone connected between the first crystallization zone and the second crystallization zone, the vortex zone being used for disturbing the waste liquid and making the waste liquid entering the second crystallization zone swirl to accelerate crystallization, the vortex zone being provided with a plurality of flocculation balls used for making the waste liquid swirl when flowing through the flocculation balls; a separation zone connected between the first crystallization zone and the vortex zone, the separation zone being provided with a liquid outlet used for discharging the treated waste liquid; a blocking zone provided between the first crystallization zone and the separation zone, the blocking zone being used for preventing the precipitated crystals in the first crystallization zone from entering the separation zone; the waste liquid flows through the first crystallization zone, then sequentially enters the blocking zone, the separation zone, the vortex zone and the second crystallization zone, and then circulates to the first crystallization zone again.

2. The waste liquid heavy metal crystallization treatment apparatus according to claim 1, wherein The second crystallization zone is provided in a plurality of forms, and the plurality of second crystallization zones are arranged along the circumference of the first crystallization zone and are spaced apart from each other.

3. The waste liquid heavy metal crystallization treatment apparatus according to claim 2, wherein The vortex zone is provided in a plurality of forms, and the plurality of vortex zones are connected between the separation zone and the plurality of second crystallization zones one by one.

4. The waste liquid heavy metal crystallization treatment apparatus according to claim 3, wherein The blocking zone is provided in a space surrounded by the plurality of vortex zones.

5. The waste liquid heavy metal crystallization treatment apparatus according to claim 1, wherein A first pipeline is provided, one end of the first pipeline is communicated with the second crystallization zone, and the other end of the first pipeline is communicated with the waste liquid inlet.

6. The waste liquid heavy metal crystallization treatment apparatus according to claim 1, wherein The separation zone is provided above the vortex zone, the vortex zone is provided above the second crystallization zone, the waste liquid inlet and the first crystallization outlet are both provided at the bottom of the first crystallization zone, and the second crystallization outlet is provided at the bottom of the second crystallization zone.

7. The waste liquid heavy metal crystallization treatment apparatus according to claim 6, wherein The blocking zone is provided with a plurality of inclined pipes, the plurality of inclined pipes are connected between the first crystallization zone and the separation zone and are used for flowing the waste liquid in the first crystallization zone into the separation zone, and the plurality of inclined pipes extend upwardly and upwardly.

8. The heavy metal crystallization treatment apparatus for waste liquid according to any one of claims 1 to 7, characterized by, A second pipeline is provided, the second pipeline is communicated with the first crystallization zone, and the second pipeline has a first inlet and a second inlet, the first inlet forms the chemical agent inlet, and the second inlet is used for backwashing.

9. A method of using the waste liquid heavy metal crystallization treatment apparatus according to claim 8, characterized by, Comprising the following steps: S1: adding chemical agents and crystallization carriers and introducing waste liquid to start heavy metal ion treatment; S2: after the crystallization carrier in the second crystallization zone is saturated, the second crystallization outlet is opened to discharge the precipitated crystals in the second crystallization zone, and then the crystallization carrier is re-injected into the second crystallization zone; S3: after the crystallization carrier in the first crystallization zone is saturated, the first crystallization outlet is opened to discharge the precipitated crystals in the first crystallization zone; S4: backwashing is performed by using the second inlet, and then the crystallization carrier is re-injected into the first crystallization zone.

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