A temperature field regulating device and system for epitaxial equipment

Abstract

The present application relates to the field of epitaxial growth technology, and specifically provides a temperature field regulating device and system for epitaxial equipment, the device comprising: a mixed gas providing component for providing a mixed gas; a gas diversion component, the gas inlet end of which is connected to the mixed gas providing component, and the gas outlet end of which is connected to the gas inlet end of the reaction chamber via a main gas path and two bypass gas paths, the main gas path being located between the two bypass gas paths, the gas diversion component being used to divert the mixed gas into the main gas path and the two bypass gas paths according to a preset flow ratio; a gas temperature regulating component, arranged on the main gas path and / or the bypass gas path, for regulating the temperature of the gas in the main gas path and / or the bypass gas path; the device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber while improving the uniformity of the temperature field in the reaction chamber.

Description

Technical Field

[0001] The present application relates to the field of epitaxial growth technology, and in particular to a temperature field regulating device and system for epitaxial equipment. Background Art

[0002] In chemical vapor deposition (CVD), film thickness uniformity is a key indicator for measuring the quality of epitaxial products. Since the temperature uniformity within the reaction chamber is a key factor in determining film thickness uniformity, improving this uniformity is crucial for controlling film thickness uniformity. Existing epitaxial equipment uses a single induction coil to heat the reaction chamber. This is affected by the design of the induction coil and the gas flow field within the reaction chamber. A single induction coil struggles to maintain a sufficiently uniform temperature field under varying gas flow conditions, so using a single induction coil for heating has limitations. Furthermore, a single induction coil lacks flexibility and adjustability in controlling the temperature field over a wide range of sizes. The existing technology improves the temperature field uniformity by optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structural design of the reaction chamber. However, these methods have disadvantages such as complex design, poor adjustability, insufficient high-temperature durability, and high production cost. The patent document with announcement number CN209412356U discloses an epitaxial deposition chamber, which uses large-sized upper and lower resistance heating plates to improve the temperature field uniformity. Since the provision of large-sized resistance heating plates requires improving the structure of the reaction chamber, and the spatial distribution of the resistance wire is relatively fixed (that is, the position of the resistance wire is not easy to adjust), the epitaxial deposition chamber has the disadvantages of complex design, poor adjustability and high production cost.

[0003] There is currently no effective technical solution to the above problems. Summary of the Invention

[0004] The purpose of this application is to provide a temperature field adjustment device and system for epitaxial equipment, which can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber while improving the uniformity of the temperature field in the reaction chamber.

[0005] In a first aspect, the present application provides a temperature field regulating device for an epitaxial device, for regulating the temperature field of the epitaxial device, wherein the epitaxial device includes a reaction chamber, and the temperature field regulating device for the epitaxial device includes:

[0006] A mixed gas providing component, used for providing mixed gas;

[0007] A gas splitter assembly, whose gas inlet end is connected to the mixed gas supply assembly, and whose gas outlet end is connected to the gas inlet end of the reaction chamber through a main gas path and two bypass gas paths, wherein the main gas path is located between the two bypass gas paths, and the gas splitter assembly is used to split the mixed gas into the main gas path and the two bypass gas paths according to a preset flow ratio;

[0008] The gas temperature regulating component is arranged in the main gas path and / or the bypass gas path, and is used to regulate the temperature of the gas in the main gas path and / or the bypass gas path.

[0009] The present application provides a temperature field regulating device for epitaxial equipment, which regulates the relative temperature of the main gas and the bypass gas through a gas temperature regulating component to reduce the temperature difference between the central temperature in the reaction chamber and the edge temperature in the reaction chamber, thereby effectively improving the temperature field uniformity in the reaction chamber. Since the temperature field regulating device only needs to improve the temperature field uniformity in the reaction chamber by regulating the relative temperature of the main gas and the bypass gas, that is, the temperature field regulating device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber to improve the temperature field uniformity in the reaction chamber, and the relative temperature of the main gas and the bypass gas is adjustable, compared with the existing technology, the temperature field regulating device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber.

[0010] Optionally, the gas diversion component includes a diversion joint and three mass flow controllers, the diversion joint includes an air inlet end and three air outlet ends, the air inlet end of the diversion joint is connected to the mixed gas providing component, the air outlet end of the diversion joint is respectively connected to the bypass gas path and the main gas path, and the three mass flow controllers are respectively arranged on the main gas path and the bypass gas path.

[0011] Optionally, the gas temperature regulating component includes a bypass gas heating component and a main gas heating component, the bypass gas heating component is arranged on the bypass gas path, and the main gas heating component is arranged on the main gas path.

[0012] Optionally, the gas temperature regulating component includes a bypass gas heating component, a bypass gas cooling component, a main gas heating component and a main gas cooling component, the bypass gas heating component and the bypass gas cooling component are both arranged on the bypass gas path, and the main gas heating component and the main gas cooling component are both arranged on the main gas path.

[0013] Optionally, the gas temperature regulating component includes a first carrier gas supply component, a second carrier gas supply component, a first gas mixing component and a second gas mixing component, the first gas mixing component is connected to the first carrier gas supply component and the bypass gas path, and the second gas mixing component is connected to the second carrier gas supply component and the main gas path.

[0014] Optionally, the temperature field regulating device for the epitaxial equipment also includes two partitions, which are arranged at the air inlet end of the reaction chamber to divide the air inlet end of the reaction chamber into a main gas inlet end and two bypass gas inlet ends. The main gas inlet end is located between the two bypass gas inlet ends, the main gas path is connected to the main gas inlet end, and the bypass gas path is connected to the bypass gas inlet end.

[0015] Since this technical solution divides the air inlet end of the reaction chamber into a main gas inlet end and two bypass gas inlet ends, and the partition isolates the main gas and bypass gas entering the reaction chamber, this technical solution can effectively avoid the situation where the main gas mixes with the bypass gas when entering the reaction chamber, and the temperature difference between the main gas and the bypass gas is reduced, resulting in an increase in the time required to adjust the temperature field uniformity or the inability to adjust the temperature field uniformity.

[0016] Optionally, the gas temperature regulating assembly includes a first transition pipe connected to the main gas path and / or a second transition pipe connected to the bypass gas path, and both the first transition pipe and the second transition pipe are spiral gas path structures.

[0017] This technical solution sets the first transition duct and the second transition duct as a spiral gas path structure to extend the residence time of the bypass gas in the second transition duct and / or the residence time of the main gas in the first transition duct, so that the gas temperature regulating component can fully heat or cool the bypass gas and / or the main gas, thereby effectively improving the temperature uniformity of the bypass gas and / or the main gas.

[0018] In a second aspect, the present application further provides a temperature field adjustment system for an epitaxial device, which is used to adjust the temperature field of the epitaxial device. The epitaxial device includes a reaction chamber. The temperature field adjustment system for the epitaxial device includes:

[0019] A mixed gas providing component, used for providing mixed gas;

[0020] A gas splitter assembly, whose gas inlet end is connected to the mixed gas supply assembly, and whose gas outlet end is connected to the gas inlet end of the reaction chamber through a main gas path and two bypass gas paths, wherein the main gas path is located between the two bypass gas paths, and the gas splitter assembly is used to split the mixed gas into the main gas path and the two bypass gas paths according to a preset flow ratio;

[0021] A gas temperature regulating component is provided in the main gas path and / or the bypass gas path, and is used to regulate the temperature of the gas in the main gas path and / or the bypass gas path;

[0022] A temperature field detection component is provided in the reaction chamber and is used to detect whether the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold;

[0023] The controller is electrically connected to the temperature field detection component and the gas temperature adjustment component, and is used to control the gas temperature adjustment component to adjust the temperature of the gas in the main gas path and / or the bypass gas path when it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold.

[0024] The present application provides a temperature field regulation system for epitaxial equipment, which regulates the relative temperature of the main gas and the bypass gas through a gas temperature regulation component to reduce the temperature difference between the center temperature in the reaction chamber and the edge temperature in the reaction chamber, thereby effectively improving the temperature field uniformity in the reaction chamber. Since the temperature field regulation system only needs to improve the temperature field uniformity in the reaction chamber by regulating the relative temperature of the main gas and the bypass gas, that is, the temperature field regulation device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber to improve the temperature field uniformity in the reaction chamber, and the relative temperature of the main gas and the bypass gas is adjustable, compared with the existing technology, the temperature field regulation system can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber.

[0025] Optionally, the gas temperature regulating component includes a bypass gas heating component and a main gas heating component, the bypass gas heating component is provided on the bypass gas path, and the main gas heating component is provided on the main gas path. When the controller detects that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold, the controller controls the gas temperature regulating component to regulate the temperature of the gas in the main gas path and / or the bypass gas path to execute the following:

[0026] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is lower than the edge temperature, the bypass gas heating component is controlled to heat the bypass gas and the main gas heating component is controlled to heat the main gas, and the heating power of the bypass gas heating component is lower than the heating power of the main gas heating component;

[0027] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is greater than the edge temperature, the bypass gas heating component is controlled to heat the bypass gas and the main gas heating component is controlled to heat the main gas, and the heating power of the bypass gas heating component is greater than the heating power of the main gas heating component.

[0028] Optionally, the gas temperature regulating component includes a first carrier gas supply component, a second carrier gas supply component, a first gas mixing component, and a second gas mixing component. The first gas mixing component is connected to the first carrier gas supply component and the bypass gas path, and the second gas mixing component is connected to the second carrier gas supply component and the main gas path. When the controller detects that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold, the controller controls the gas temperature regulating component to adjust the temperature of the gas in the main gas path and / or the bypass gas path to perform the following:

[0029] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is lower than the edge temperature, the first carrier gas supply component is controlled to supply the first carrier gas to the first gas mixing component and the second carrier gas supply component is controlled to supply the second carrier gas to the second gas mixing component, and the temperature of the first carrier gas is lower than the temperature of the second carrier gas;

[0030] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than the preset first temperature threshold and the center temperature is greater than the edge temperature, the first carrier gas providing component is controlled to provide the first carrier gas to the first gas mixing component and the second carrier gas providing component is controlled to provide the second carrier gas to the second gas mixing component, and the temperature of the first carrier gas is greater than the temperature of the second carrier gas.

[0031] From the above, it can be seen that the present application provides a temperature field regulating device and system for epitaxial equipment, which regulates the relative temperature of the main gas and the bypass gas through a gas temperature regulating component to reduce the temperature difference between the center temperature in the reaction chamber and the edge temperature in the reaction chamber, thereby effectively improving the temperature field uniformity in the reaction chamber. Since the temperature field regulating device only needs to improve the temperature field uniformity in the reaction chamber by adjusting the relative temperature of the main gas and the bypass gas, that is, the temperature field regulating device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber to improve the temperature field uniformity in the reaction chamber, and the relative temperature of the main gas and the bypass gas is adjustable, compared with the existing technology, the temperature field regulating device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1This is a structural schematic diagram of a temperature field regulating device for epitaxial equipment provided in Example 1 of the present application.

[0033] Figure 2 This is a structural schematic diagram of a temperature field regulating device for epitaxial equipment provided in Example 2 of the present application.

[0034] Figure 3 This is a structural schematic diagram of a temperature field regulating device for epitaxial equipment provided in Example 3 of the present application.

[0035] Figure 4 This is a structural schematic diagram of a temperature field adjustment device for epitaxial equipment provided in Example 4 of the present application.

[0036] Figure 5 This is a structural schematic diagram of a temperature field adjustment device for epitaxial equipment provided in Example 5 of the present application.

[0037] Figure 6 This is a structural schematic diagram of a temperature field adjustment device for epitaxial equipment provided in Example 6 of the present application.

[0038] Figure 7 A schematic top view of a reaction chamber provided in an embodiment of the present application.

[0039] Figure 8 A schematic structural diagram of a gas diversion assembly provided in an embodiment of the present application.

[0040] Figure 9 A schematic diagram of the control structure of a temperature field adjustment system for epitaxial equipment provided in an embodiment of the present application.

[0041] Figure numerals: 1. reaction chamber; 2. mixed gas supply component; 3. gas diversion component; 31. diversion joint; 32. mass flow controller; 4. main gas path; 5. bypass gas path; 6. gas temperature adjustment component; 61. bypass gas heating component; 62. main gas heating component; 63. bypass gas cooling component; 64. main gas cooling component; 65. first carrier gas supply component; 66. second carrier gas supply component; 67. first gas mixing component; 68. second gas mixing component; 7. wafer; 8. partition; 9. temperature field detection component; 10. controller. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work fall within the scope of protection of the present application.

[0043] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0044] First, as Figures 1-8 As shown, the present application provides a temperature field regulating device for epitaxial equipment, which is used to regulate the temperature field of the epitaxial equipment. The epitaxial equipment includes a reaction chamber 1. The temperature field regulating device for the epitaxial equipment includes:

[0045] A mixed gas providing component 2, used for providing a mixed gas;

[0046] A gas splitter assembly 3, whose gas inlet end is connected to the mixed gas supply assembly 2, and whose gas outlet end is connected to the gas inlet end of the reaction chamber 1 via a main gas path 4 and two bypass gas paths 5. The main gas path 4 is located between the two bypass gas paths 5. The gas splitter assembly 3 is used to split the mixed gas into the main gas path 4 and the two bypass gas paths 5 according to a preset flow ratio;

[0047] The gas temperature regulating component 6 is arranged on the main gas path 4 and / or the bypass gas path 5 and is used to regulate the temperature of the gas in the main gas path 4 and / or the bypass gas path 5 .

[0048] Reaction chamber 1 is conventional, and is provided with an inlet and outlet. A tray for placing wafers 7 is also provided within reaction chamber 1. Mixed gas supply assembly 2 can be a mixed gas storage tank, a gas mixing device, or other component capable of providing a mixed gas. The mixed gas can be a mixture of multiple reactant gases, or a mixture of a reactant gas and a carrier gas. In this embodiment, the mixed gas is preferably a mixture of a reactant gas and a carrier gas. The reactant gas is a gas that undergoes a chemical reaction during epitaxial growth, while the carrier gas is a gas that does not undergo a chemical reaction during epitaxial growth. The carrier gas is preferably hydrogen. It should be understood that different reactant gases are required to deposit different thin films on wafer 7. Even when depositing the same thin film on wafer 7, different reactant gases can be used. Therefore, those skilled in the art can change the type of reactant gas according to actual needs. For example, for depositing a silicon carbide film, the reactant gases include a carbon source gas (e.g., C3H8) and a silicon source gas (e.g., SiH4). The gas diversion component 3 is a component such as a mechanical gas diverter or a cyclonic gas diverter that can divert the input gas and send the diverted gas into the multi-path gas path. The gas inlet end of the gas diversion component 3 is connected to the mixed gas providing component 2, and the output end of the gas diversion component 3 is connected to the gas inlet end of the reaction chamber 1 through a main gas path 4 and two bypass gas paths 5. The main gas path 4 is located between the two bypass gas paths 5. The gas diversion component 3 is used to divert the bypass gas according to a preset flow ratio (preferably 1:3:1, that is, the flow rate of the bypass gas : The flow rate of main gas: the flow rate of bypass gas is 1:3:1) The mixed gas is diverted and sent into the main gas path 4 and two bypass gas paths 5. This embodiment is equivalent to using the gas diversion component 3 to divide the mixed gas into one main gas and two bypass gases. The main gas path 4 is used to transport the main gas, and the two bypass gas paths 5 are used to transport the two bypass gases respectively. It should be understood that since the main gas path 4 is located between the two bypass gas paths 5, the main gas is located between the two bypass gases when entering the reaction chamber 1. The gas temperature regulating component 6 is a component that regulates the gas temperature by heat exchange. The gas temperature regulating component 6 is arranged on the main gas path 4 and / or the bypass gas path 5. The gas temperature regulating component 6 is used to regulate the temperature of the gas in the main gas path 4 and / or the bypass gas path 5 (equivalent to regulating the temperature of the main gas and / or the bypass gas).

[0049] The working principle of this embodiment is as follows: the temperature difference between the center temperature of the reaction chamber 1 and the edge temperature of the reaction chamber 1 will cause the temperature field in the reaction chamber 1 to be uneven. Since the gas temperature adjustment component 6 is used to adjust the temperature of the gas in the main gas path 4 and / or the bypass gas path 5, and the main gas flows through the center area of ​​the reaction chamber 1 and the bypass gas flows through the edge area of ​​the reaction chamber 1, the temperature field adjustment device can adjust the relative temperature of the main gas and the bypass gas through the gas temperature adjustment component 6 to reduce the temperature difference between the center temperature of the reaction chamber 1 and the edge temperature of the reaction chamber 1. This effectively improves the temperature field uniformity in the reaction chamber 1. Since the temperature field regulating device only needs to improve the temperature field uniformity in the reaction chamber 1 by adjusting the relative temperature of the main gas and the bypass gas, that is, the temperature field regulating device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber 1 to improve the temperature field uniformity in the reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable. Therefore, compared with the existing technology, the temperature field regulating device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber 1.

[0050] The present application provides a temperature field regulating device for epitaxial equipment, which regulates the relative temperature of the main gas and the bypass gas through a gas temperature regulating component 6 to reduce the temperature difference between the center temperature in the reaction chamber 1 and the edge temperature in the reaction chamber 1, thereby effectively improving the temperature field uniformity in the reaction chamber 1. Since the temperature field regulating device only needs to improve the temperature field uniformity in the reaction chamber 1 by regulating the relative temperature of the main gas and the bypass gas, that is, the temperature field regulating device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber 1 to improve the temperature field uniformity in the reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable, compared with the existing technology, the temperature field regulating device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber 1.

[0051] Preferably, in some embodiments, the gas diversion component 3 includes a diversion joint 31 and three mass flow controllers 32. The diversion joint 31 includes an air inlet end and three air outlet ends. The air inlet end of the diversion joint 31 is connected to the mixed gas providing component 2, and the air outlet end of the diversion joint 31 is respectively connected to the bypass gas path 5 and the main gas path 4. The three mass flow controllers 32 are respectively arranged on the main gas path 4 and the bypass gas path 5. The mass flow controller 32 is a prior art. The mass flow controller 32 can change the gas flow of the gas path in which it is located. Since the main gas path 4 and the bypass gas path 5 are both provided with mass flow controllers 32, this embodiment can adjust the gas flow of the main gas path 4 and the bypass gas path 5 through the mass flow controller 32 to adjust the ratio of the gas flow in the main gas path 4 to the gas flow in the bypass gas path 5 to a preset flow ratio. It should be understood that in order to show the connection relationship between the various gas paths, in Figures 1-6 as well as Figure 8 In the embodiment, the main gas path 4 and the bypass gas path 5 are not parallel to each other. However, in actual use, the main gas path 4 and the bypass gas path 5 should be parallel to each other so that the gases entering the reaction chamber 1 should be kept parallel to each other as much as possible. Example 1

[0052] like Figure 1 As shown, the gas temperature adjustment assembly 6 includes a bypass gas cooling assembly 63 and a main gas cooling assembly 64. The bypass gas cooling assembly 63 is provided on the bypass gas path 5, and the main gas cooling assembly 64 is provided on the main gas path 4. The bypass gas cooling assembly 63 is a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the bypass gas, while the main gas cooling assembly 64 is a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the main gas. When the center temperature in the reaction chamber 1 is higher than the edge temperature, the bypass gas cooling component 63 cools the bypass gas, and the main gas cooling component 64 cools the main gas, and the cooling efficiency of the main gas cooling component 64 is greater than the cooling efficiency of the bypass gas cooling component 63, so that the temperature of the main gas is lower than the temperature of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature; when the center temperature in the reaction chamber 1 is lower than the edge temperature, the bypass gas cooling component 63 cools the bypass gas, and the main gas cooling component 64 cools the main gas, and the cooling efficiency of the main gas cooling component 64 is less than the cooling efficiency of the bypass gas cooling component 63, so that the temperature of the main gas is higher than the temperature of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. Example 2

[0053] like Figure 2As shown, the gas temperature regulating assembly 6 includes a bypass gas heating assembly 61 and a main gas heating assembly 62. The bypass gas heating assembly 61 is arranged on the bypass gas path 5, and the main gas heating assembly 62 is arranged on the main gas path 4. The bypass gas heating assembly 61 is a component such as a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the bypass gas, and the main gas heating assembly 62 is a component such as a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the main gas. When the center temperature in the reaction chamber 1 is higher than the edge temperature, the bypass gas heating component 61 heats the bypass gas, and the main gas heating component 62 heats the main gas, and the heating efficiency of the main gas heating component 62 is lower than the heating efficiency of the bypass gas heating component 61, so that the temperature of the main gas is lower than the temperature of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature; when the center temperature in the reaction chamber 1 is lower than the edge temperature, the bypass gas heating component 61 heats the bypass gas, and the main gas heating component 62 heats the main gas, and the heating efficiency of the main gas heating component 62 is greater than the heating efficiency of the bypass gas heating component 61, so that the temperature of the main gas is higher than the temperature of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. Since this embodiment improves the temperature field uniformity in the reaction chamber 1 by simultaneously heating the bypass gas and the main gas, and Example 1 improves the temperature field uniformity in the reaction chamber 1 by simultaneously cooling the bypass gas and the main gas, compared with Example 1, this embodiment can effectively avoid the situation where the overall temperature in the reaction chamber 1 drops due to the simultaneous cooling of the bypass gas and the main gas, thereby interfering with the epitaxial growth of the wafer 7. Example 3

[0054] like Figure 3As shown, the gas temperature regulating assembly 6 includes a bypass gas heating assembly 61, a bypass gas cooling assembly 63, a main gas heating assembly 62, and a main gas cooling assembly 64. The bypass gas heating assembly 61 and the bypass gas cooling assembly 63 are both arranged on the bypass gas path 5, and the main gas heating assembly 62 and the main gas cooling assembly 64 are both arranged on the main gas path 4. The bypass gas cooling assembly 63 is a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the bypass gas. The main gas cooling assembly 64 is a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the main gas. The bypass gas heating assembly 61 is a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the bypass gas. The main gas heating assembly 62 is a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the main gas. When the center temperature in the reaction chamber 1 is higher than the edge temperature, the bypass gas heating assembly 61 heats the bypass gas, and the main gas cooling assembly 64 cools the main gas, so that the temperature of the main gas is lower than that of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. When the center temperature in the reaction chamber 1 is lower than the edge temperature, the bypass gas cooling assembly 63 cools the bypass gas, and the main gas heating assembly 62 heats the main gas, so that the temperature of the main gas is higher than that of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. Because this embodiment adjusts the temperature difference between the main gas and the bypass gas by heating the bypass gas and cooling the main gas, or heating the main gas and cooling the bypass gas, while Example 1 adjusts the temperature difference between the main gas and the bypass gas by simultaneously cooling the main gas and the bypass gas, and Example 2 adjusts the temperature difference between the main gas and the bypass gas by simultaneously heating the main gas and the bypass gas, this embodiment can effectively shorten the time required to adjust the temperature difference between the main gas and the bypass gas compared to Examples 1 and 2. Example 4

[0055] like Figure 4As shown, the gas temperature regulating assembly 6 includes a bypass gas heating assembly 61 and a bypass gas cooling assembly 63, both of which are arranged on the bypass gas path 5. The bypass gas cooling assembly 63 is a component such as a gas cooling assembly or a liquid cooling assembly that can lower the temperature of the bypass gas, while the bypass gas heating assembly 61 is a component such as a resistance wire heating assembly or a water bath heating assembly that can raise the temperature of the bypass gas. When the center temperature in the reaction chamber 1 is higher than the edge temperature, the bypass gas heating assembly 61 heats the bypass gas to lower the temperature of the main gas, thereby reducing the temperature difference between the center temperature and the edge temperature. When the center temperature in the reaction chamber 1 is lower than the edge temperature, the bypass gas cooling assembly 63 cools the bypass gas to higher the temperature of the main gas, thereby reducing the temperature difference between the center temperature and the edge temperature. Example 5

[0056] like Figure 5 As shown, the gas temperature regulating assembly 6 includes a main gas heating assembly 62 and a main gas cooling assembly 64, both of which are arranged on the main gas path 4. The main gas cooling assembly 64 is a component such as a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the main gas, while the main gas heating assembly 62 is a component such as a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the main gas. When the center temperature in the reaction chamber 1 is higher than the edge temperature, the main gas cooling assembly 64 cools the main gas to make the temperature of the main gas lower than the temperature of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature; when the center temperature in the reaction chamber 1 is lower than the edge temperature, the main gas heating assembly 62 heats the main gas to make the temperature of the main gas higher than the temperature of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. Example 6

[0057] like Figure 6As shown, the gas temperature adjustment component 6 includes a first carrier gas supply component 65, a second carrier gas supply component 66, a first gas mixing component 67, and a second gas mixing component 68. The first gas mixing component 67 is connected to the first carrier gas supply component 65 and the bypass gas circuit 5, and the second gas mixing component 68 is connected to the second carrier gas supply component 66 and the main gas circuit 4. The first carrier gas supply component 65 is used to provide a first carrier gas to the first gas mixing component 67, and the second carrier gas supply component 66 is used to provide a second carrier gas to the second gas mixing component 68. The temperature of the first carrier gas is different from that of the second carrier gas. The first gas mixing component 67 is used to mix the first carrier gas with the bypass gas to adjust the temperature of the bypass gas, and the second gas mixing component 68 is used to mix the second carrier gas with the main gas to adjust the temperature of the main gas. When the center temperature in the reaction chamber 1 is higher than the edge temperature, the first carrier gas supply assembly 65 provides the first carrier gas to the first gas mixing assembly 67, and the second carrier gas supply assembly 66 provides the second carrier gas to the second gas mixing assembly 68. The temperature of the first carrier gas is higher than that of the second carrier gas. The first gas mixing assembly 67 is used to mix the first carrier gas with the bypass gas to increase the temperature of the bypass gas. The second gas mixing assembly 68 is used to mix the second carrier gas with the main gas to reduce the temperature of the main gas, thereby making the temperature of the main gas lower than that of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. When the center temperature in the reaction chamber 1 is lower than the edge temperature, the first carrier gas supply assembly 65 provides the first carrier gas to the first gas mixing assembly 67, and the second carrier gas supply assembly 66 provides the second carrier gas to the second gas mixing assembly 68. The temperature of the first carrier gas is lower than that of the second carrier gas. The first gas mixing assembly 67 is used to mix the first carrier gas with the bypass gas to lower the temperature of the bypass gas. The second gas mixing assembly 68 is used to mix the second carrier gas with the main gas to increase the temperature of the main gas, thereby making the temperature of the main gas higher than that of the bypass gas, thereby reducing the temperature difference between the center temperature and the edge temperature. It should be understood that the ratio of the first carrier gas to the second carrier gas is preferably the same as the preset flow ratio, so that the ratio of the main gas to the bypass gas before the carrier gas mixing is the same as the ratio of the main gas to the bypass gas after the carrier gas mixing.

[0058] The present application can use any one of the structures in Examples 1-6 to improve the gas temperature adjustment component 6 in the above-mentioned embodiment.

[0059] Preferably, in some embodiments, the first carrier gas supply assembly 65 includes a first carrier gas storage assembly, a first carrier gas heating assembly, and a first carrier gas cooling assembly, and the second carrier gas supply assembly 66 includes a second carrier gas storage assembly, a second carrier gas heating assembly, and a second carrier gas cooling assembly. The first carrier gas storage assembly is a component such as a first carrier gas storage tank or a first carrier gas storage chamber that can store the first carrier gas, the first carrier gas cooling assembly is a component such as a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the first carrier gas, and the first carrier gas heating assembly is a component such as a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the first carrier gas. The second carrier gas storage assembly is a component such as a second carrier gas storage tank or a second carrier gas storage chamber that can store the second carrier gas, the second carrier gas cooling assembly is a component such as a gas cooling assembly or a liquid cooling assembly that can reduce the temperature of the second carrier gas, and the second carrier gas heating assembly is a component such as a resistance wire heating assembly or a water bath heating assembly that can increase the temperature of the second carrier gas.

[0060] Preferably, in some embodiments, the temperature field regulating device for epitaxial equipment further comprises two partitions 8, which are arranged at the air inlet end of the reaction chamber 1 to divide the air inlet end of the reaction chamber 1 into a main gas inlet end and two bypass gas inlet ends, the main gas inlet end being located between the two bypass gas inlet ends, the main gas path 4 being connected to the main gas inlet end, and the bypass gas path 5 being connected to the bypass gas inlet end. Since this embodiment divides the air inlet end of the reaction chamber 1 into a main gas inlet end and two bypass gas inlet ends, and the partition 8 has an isolating effect on the main gas and the bypass gas entering the reaction chamber 1, this embodiment can effectively avoid the situation in which the time required to regulate the uniformity of the temperature field increases or the temperature field uniformity cannot be regulated due to the main gas mixing with the bypass gas upon entering the reaction chamber 1 and the reduction of the temperature difference between the main gas and the bypass gas.

[0061] Preferably, in some embodiments, the gas temperature adjustment assembly 6 includes a first transition duct (not shown) connected to the main gas path and / or a second transition duct (not shown) connected to the bypass gas path. Both the first and second transition ducts have spiral gas path structures. In this embodiment, the first and second transition ducts employ a spiral gas path structure to extend the residence time of the bypass gas in the second transition duct and / or the residence time of the main gas in the first transition duct, allowing the gas temperature adjustment assembly 6 to fully heat or cool the bypass gas and / or the main gas, thereby effectively improving the temperature uniformity of the bypass gas and / or the main gas. It should be understood that in Example 6, the first transition duct corresponds to the second gas mixing assembly 68, the gas inlet end of the first transition duct being connected to the second carrier gas supply assembly 66 and the main gas path, respectively. The second transition duct corresponds to the first gas mixing assembly 67, the gas inlet end of the second transition duct being connected to the first carrier gas supply assembly 65 and the bypass gas path, respectively.

[0062] From the above, it can be seen that the temperature field regulating device for epitaxial equipment provided in the present application regulates the relative temperature of the main gas and the bypass gas through the gas temperature regulating component 6, so that the temperature difference between the center temperature in the reaction chamber 1 and the edge temperature in the reaction chamber 1 is reduced, thereby effectively improving the temperature field uniformity in the reaction chamber 1. Since the temperature field regulating device only needs to improve the temperature field uniformity in the reaction chamber 1 by adjusting the relative temperature of the main gas and the bypass gas, that is, the temperature field regulating device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber 1 to improve the temperature field uniformity in the reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable. Therefore, compared with the existing technology, the temperature field regulating device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber 1.

[0063] Second, as Figure 9 As shown, the present application also provides a temperature field adjustment system for an epitaxial device, which is used to adjust the temperature field of the epitaxial device. The epitaxial device includes a reaction chamber 1. The temperature field adjustment system for the epitaxial device includes:

[0064] A mixed gas providing component 2, used for providing a mixed gas;

[0065] A gas splitter assembly 3, whose gas inlet end is connected to the mixed gas supply assembly 2, and whose gas outlet end is connected to the gas inlet end of the reaction chamber 1 via a main gas path 4 and two bypass gas paths 5. The main gas path 4 is located between the two bypass gas paths 5. The gas splitter assembly 3 is used to split the mixed gas into the main gas path 4 and the two bypass gas paths 5 according to a preset flow ratio;

[0066] A gas temperature regulating component 6 is provided on the main gas path 4 and / or the bypass gas path 5 and is used to regulate the temperature of the gas in the main gas path 4 and / or the bypass gas path 5;

[0067] The temperature field detection component 9 is provided in the reaction chamber 1 and is used to detect whether the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold;

[0068] The controller 10 is electrically connected to the temperature field detection component 9 and the gas temperature adjustment component 6, and is used to control the gas temperature adjustment component 6 to adjust the temperature of the gas in the main gas path 4 and / or the bypass gas path 5 when it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold.

[0069] Reaction chamber 1 is conventional, and is provided with an inlet and outlet. A tray for placing wafers 7 is also provided within reaction chamber 1. Mixed gas supply assembly 2 can be a mixed gas storage tank, a gas mixing device, or other component capable of providing a mixed gas. The mixed gas can be a mixture of multiple reactant gases, or a mixture of a reactant gas and a carrier gas. In this embodiment, the mixed gas is preferably a mixture of a reactant gas and a carrier gas. The reactant gas is a gas that undergoes a chemical reaction during epitaxial growth, while the carrier gas is a gas that does not undergo a chemical reaction during epitaxial growth. The carrier gas is preferably hydrogen. It should be understood that different reactant gases are required to deposit different thin films on wafer 7. Even when depositing the same thin film on wafer 7, different reactant gases can be used. Therefore, those skilled in the art can change the type of reactant gas according to actual needs. For example, for depositing a silicon carbide film, the reactant gases include a carbon source gas (e.g., C3H8) and a silicon source gas (e.g., SiH4). The gas diversion component 3 is a component such as a mechanical gas diverter or a cyclonic gas diverter that can divert the input gas and send the diverted gas into the multi-path gas path. The gas inlet end of the gas diversion component 3 is connected to the mixed gas providing component 2, and the output end of the gas diversion component 3 is connected to the gas inlet end of the reaction chamber 1 through a main gas path 4 and two bypass gas paths 5. The main gas path 4 is located between the two bypass gas paths 5. The gas diversion component 3 is used to divert the bypass gas according to a preset flow ratio (preferably 1:3:1, that is, the flow rate of the bypass gas : The flow rate of the main gas: the flow rate of the bypass gas is 1:3:1) The mixed gas is diverted and sent into the main gas path 4 and two bypass gas paths 5. This embodiment is equivalent to using the gas diversion component 3 to divide the mixed gas into one main gas and two bypass gases. The main gas path 4 is used to transport the main gas, and the two bypass gas paths 5 are used to transport the two bypass gases respectively. It should be understood that since the main gas path 4 is located between the two bypass gas paths 5, the main gas is located between the two bypass gases when entering the reaction chamber 1. The gas temperature regulating component 6 is a component that regulates the temperature of the gas by heat exchange. The gas temperature regulating component 6 is arranged on the main gas path 4 and / or the bypass gas path 5. The gas temperature regulating component 6 is used to regulate the temperature of the gas in the main gas path 4 and / or the bypass gas path 5. The gas temperature regulating component 6 is equivalent to regulating the temperature of the main gas and / or the bypass gas.The temperature field detection component 9 is a component of the temperature field uniformity detection system, temperature field detector, etc., which is used to detect whether the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold. The first temperature threshold is a preset value. The first temperature threshold is the maximum error between the center temperature and the edge temperature allowed when the temperature field in the reaction chamber is uniformly distributed. If the absolute value of the difference between the center temperature and the edge temperature is greater than the first temperature threshold, the temperature field distribution in the reaction chamber 1 is considered uneven; if the absolute value of the difference between the center temperature and the edge temperature is less than or equal to the first temperature threshold, the temperature field distribution in the reaction chamber 1 is considered uniform.

[0070] The working principle of this embodiment is as follows: the temperature difference between the center temperature in the reaction chamber 1 and the edge temperature in the reaction chamber 1 will cause the temperature field in the reaction chamber 1 to be uneven. Since the gas temperature regulating component 6 is used to regulate the temperature of the gas in the main gas path 4 and / or the bypass gas path 5, and the main gas flows through the center area in the reaction chamber 1 and the bypass gas flows through the edge area in the reaction chamber 1, when it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than the preset first temperature threshold, the controller 10 regulates the relative temperature of the main gas and the bypass gas through the gas temperature regulating component 6, so that the center temperature in the reaction chamber 1 is equal to the edge temperature in the reaction chamber 1. The temperature difference between the edge temperatures in chamber 1 is reduced, thereby effectively improving the temperature field uniformity in reaction chamber 1. Since the temperature field regulation system only needs to adjust the relative temperature of the main gas and the bypass gas to improve the temperature field uniformity in reaction chamber 1, that is, the temperature field regulation system does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of reaction chamber 1 to improve the temperature field uniformity in reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable. Therefore, compared with the existing technology, the temperature field regulation system can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in reaction chamber 1. This embodiment is equivalent to providing a system for automatically improving the uniformity of the temperature field.

[0071] The present application provides a temperature field regulation system for epitaxial equipment, which regulates the relative temperature of the main gas and the bypass gas through the gas temperature regulation component 6 to reduce the temperature difference between the center temperature in the reaction chamber 1 and the edge temperature in the reaction chamber 1, thereby effectively improving the temperature field uniformity in the reaction chamber 1. Since the temperature field regulation system only needs to improve the temperature field uniformity in the reaction chamber 1 by adjusting the relative temperature of the main gas and the bypass gas, that is, the temperature field regulation system does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber 1 to improve the temperature field uniformity in the reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable, compared with the prior art, the temperature field regulation system can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber 1. This embodiment is equivalent to providing a system for automatically improving the uniformity of the temperature field.

[0072] In some embodiments, the gas temperature regulating assembly 6 includes a bypass gas heating assembly 61 and a main gas heating assembly 62. The bypass gas heating assembly 61 is provided on the bypass gas path 5, and the main gas heating assembly 62 is provided on the main gas path 4. When the controller 10 detects that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold, the controller 10 controls the gas temperature regulating assembly 6 to adjust the temperature of the main gas and / or the bypass gas to perform the following steps:

[0073] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold and the center temperature is lower than the edge temperature, the bypass gas heating component 61 is controlled to heat the bypass gas and the main gas heating component 62 is controlled to heat the main gas, and the heating power of the bypass gas heating component 61 is lower than the heating power of the main gas heating component 62;

[0074] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than the preset first temperature threshold and the center temperature is greater than the edge temperature, the bypass gas heating component 61 is controlled to heat the bypass gas and the main gas heating component 62 is controlled to heat the main gas, and the heating power of the bypass gas heating component 61 is greater than the heating power of the main gas heating component 62.

[0075] The working principle of this embodiment is the same as that of the above-mentioned embodiment 2, and will not be discussed in detail here.

[0076] In some embodiments, the gas temperature adjustment component 6 includes a first carrier gas supply component 65, a second carrier gas supply component 66, a first gas mixing component 67, and a second gas mixing component 68. The first gas mixing component 67 is connected to the first carrier gas supply component 65 and the bypass gas path 5, and the second gas mixing component 68 is connected to the second carrier gas supply component 66 and the main gas path 4. When the controller 10 detects that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold, the controller 10 controls the gas temperature adjustment component 6 to adjust the temperature of the gas in the main gas and / or the bypass gas to perform the following:

[0077] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than a preset first temperature threshold and the center temperature is lower than the edge temperature, the first carrier gas supply component 65 is controlled to supply the first carrier gas to the first gas mixing component 67 and the second carrier gas supply component 66 is controlled to supply the second carrier gas to the second gas mixing component 68, and the temperature of the first carrier gas is lower than the temperature of the second carrier gas;

[0078] When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber 1 is greater than the preset first temperature threshold and the center temperature is greater than the edge temperature, the first carrier gas providing component 65 is controlled to provide the first carrier gas to the first gas mixing component 67 and the second carrier gas providing component 66 is controlled to provide the second carrier gas to the second gas mixing component 68, and the temperature of the first carrier gas is greater than the temperature of the second carrier gas.

[0079] The working principle of this embodiment is the same as that of the above-mentioned embodiment 6, and will not be discussed in detail here.

[0080] From the above, it can be seen that the temperature field regulation system for epitaxial equipment provided in the present application regulates the relative temperature of the main gas and the bypass gas through the gas temperature regulation component 6, so that the temperature difference between the center temperature in the reaction chamber 1 and the edge temperature in the reaction chamber 1 is reduced, thereby effectively improving the temperature field uniformity in the reaction chamber 1. Since the temperature field regulation system only needs to improve the temperature field uniformity in the reaction chamber 1 by adjusting the relative temperature of the main gas and the bypass gas, that is, the temperature field regulation system does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber 1 to improve the temperature field uniformity in the reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable. Therefore, compared with the existing technology, the temperature field regulation system can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber 1.

[0081] From the above, it can be seen that the present application provides a temperature field regulating device and system for epitaxial equipment, which regulates the relative temperature of the main gas and the bypass gas through the gas temperature regulating component 6 to reduce the temperature difference between the center temperature in the reaction chamber 1 and the edge temperature in the reaction chamber 1, thereby effectively improving the temperature field uniformity in the reaction chamber 1. Since the temperature field regulating device only needs to improve the temperature field uniformity in the reaction chamber 1 by adjusting the relative temperature of the main gas and the bypass gas, that is, the temperature field regulating device does not need to adopt means such as optimizing the induction coil structure, adding a resistance heating device or an infrared heating device, and improving the internal structure design of the reaction chamber 1 to improve the temperature field uniformity in the reaction chamber 1, and the relative temperature of the main gas and the bypass gas is adjustable. Therefore, compared with the existing technology, the temperature field regulating device can effectively reduce the design difficulty and production cost and improve the adjustability of the temperature field in the reaction chamber 1.

[0082] In the embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the above-mentioned units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another robot, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interface, the indirect coupling or communication connection of the device or unit can be electrical, mechanical or other forms.

[0083] In addition, the units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0084] Furthermore, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0085] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any actual relationship or order between these entities or operations.

[0086] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A temperature field regulating device for epitaxial equipment, used to regulate the temperature field of the epitaxial equipment, wherein the epitaxial equipment includes a reaction chamber, characterized in that: The temperature field regulating device for epitaxial equipment includes: A mixed gas providing component, used for providing mixed gas; a gas diversion assembly, the gas inlet end of which is connected to the mixed gas supply assembly, and the gas outlet end of which is connected to the gas inlet end of the reaction chamber via a main gas path and two bypass gas paths, the main gas path being located between the two bypass gas paths, the gas diversion assembly being configured to divert the mixed gas into the main gas path and the bypass gas path according to a preset flow ratio; A gas temperature regulating component provided in the main gas path and / or the bypass gas path for regulating the temperature of the gas in the main gas path and / or the bypass gas path; Two partitions are arranged at the air inlet end of the reaction chamber to divide the air inlet end of the reaction chamber into a main gas inlet end and two bypass gas inlet ends, the main gas inlet end is located between the two bypass gas inlet ends, the main gas path is connected to the main gas inlet end, and the bypass gas path is connected to the bypass gas inlet end.

2. The temperature field regulating device for epitaxial equipment according to claim 1, characterized in that: The gas diversion component includes a diversion joint and three mass flow controllers, the diversion joint includes an air inlet end and three air outlet ends, the air inlet end of the diversion joint is connected to the mixed gas providing component, and the air outlet end of the diversion joint is respectively connected to the bypass gas path and the main gas path, and the three mass flow controllers are respectively arranged on the main gas path and the bypass gas path.

3. The temperature field regulating device for epitaxial equipment according to claim 1, characterized in that: The gas temperature regulating component includes a bypass gas heating component and a main gas heating component. The bypass gas heating component is arranged on the bypass gas path, and the main gas heating component is arranged on the main gas path.

4. The temperature field regulating device for epitaxial equipment according to claim 1, characterized in that: The gas temperature regulating component includes a bypass gas heating component, a bypass gas cooling component, a main gas heating component and a main gas cooling component. The bypass gas heating component and the bypass gas cooling component are both arranged on the bypass gas path, and the main gas heating component and the main gas cooling component are both arranged on the main gas path.

5. The temperature field regulating device for epitaxial equipment according to claim 1, characterized in that: The gas temperature regulating component includes a first carrier gas supply component, a second carrier gas supply component, a first gas mixing component and a second gas mixing component. The first gas mixing component is connected to the first carrier gas supply component and the bypass gas path, and the second gas mixing component is connected to the second carrier gas supply component and the main gas path.

6. The temperature field regulating device for epitaxial equipment according to claim 1, characterized in that: The gas temperature regulating assembly includes a first transition pipe connected to the main gas path and / or a second transition pipe connected to the bypass gas path, and both the first transition pipe and the second transition pipe have a spiral gas path structure.

7. A temperature field adjustment system for epitaxial equipment, used to adjust the temperature field of the epitaxial equipment, wherein the epitaxial equipment includes a reaction chamber, characterized in that: The temperature field adjustment system for epitaxial equipment includes: A mixed gas providing component, used for providing mixed gas; a gas diversion assembly, the gas inlet end of which is connected to the mixed gas supply assembly, and the gas outlet end of which is connected to the gas inlet end of the reaction chamber via a main gas path and two bypass gas paths, the main gas path being located between the two bypass gas paths, the gas diversion assembly being configured to divert the mixed gas into the main gas path and the bypass gas path according to a preset flow ratio; a gas temperature regulating component, provided in the main gas path and / or the bypass gas path, for regulating the temperature of the gas in the main gas path and / or the bypass gas path; a temperature field detection component, disposed in the reaction chamber, for detecting whether an absolute value of a difference between a central temperature and an edge temperature in the reaction chamber is greater than a preset first temperature threshold; Two partitions are provided at the gas inlet end of the reaction chamber to divide the gas inlet end of the reaction chamber into a main gas inlet end and two bypass gas inlet ends, the main gas inlet end is located between the two bypass gas inlet ends, the main gas path is connected to the main gas inlet end, and the bypass gas path is connected to the bypass gas inlet end; The controller is electrically connected to the temperature field detection component and the gas temperature adjustment component, and is used to control the gas temperature adjustment component to adjust the temperature of the gas in the main gas path and / or the bypass gas path when it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold.

8. The temperature field adjustment system for epitaxial equipment according to claim 7, characterized in that: The gas temperature regulating assembly includes a bypass gas heating assembly and a main gas heating assembly, wherein the bypass gas heating assembly is arranged on the bypass gas path, and the main gas heating assembly is arranged on the main gas path. When the controller detects that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold, the controller controls the gas temperature regulating assembly to regulate the temperature of the gas in the main gas path and / or the bypass gas path to execute the following steps: When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is lower than the edge temperature, the bypass gas heating component is controlled to heat the bypass gas and the main gas heating component is controlled to heat the main gas, and the heating power of the bypass gas heating component is lower than the heating power of the main gas heating component; When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is greater than the edge temperature, the bypass gas heating component is controlled to heat the bypass gas and the main gas heating component is controlled to heat the main gas, and the heating power of the bypass gas heating component is greater than the heating power of the main gas heating component.

9. The temperature field adjustment system for epitaxial equipment according to claim 7, characterized in that: The gas temperature regulating assembly includes a first carrier gas supply assembly, a second carrier gas supply assembly, a first gas mixing assembly, and a second gas mixing assembly. The first gas mixing assembly is connected to the first carrier gas supply assembly and the bypass gas circuit, and the second gas mixing assembly is connected to the second carrier gas supply assembly and the main gas circuit. When the controller detects that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold, the controller controls the gas temperature regulating assembly to regulate the temperature of the gas in the main gas circuit and / or the bypass gas circuit to perform the following steps: When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is lower than the edge temperature, controlling the first carrier gas supply component to supply a first carrier gas to the first gas mixing component and controlling the second carrier gas supply component to supply a second carrier gas to the second gas mixing component, wherein the temperature of the first carrier gas is lower than the temperature of the second carrier gas; When it is detected that the absolute value of the difference between the center temperature and the edge temperature in the reaction chamber is greater than a preset first temperature threshold and the center temperature is greater than the edge temperature, the first carrier gas supply component is controlled to provide a first carrier gas to the first gas mixing component and the second carrier gas supply component is controlled to provide a second carrier gas to the second gas mixing component, and the temperature of the first carrier gas is greater than the temperature of the second carrier gas.

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