Hall sensor, method for calibrating a hall sensor and calibration device

Abstract

A Hall sensor (100) is disclosed. The Hall sensor (100) comprises a first Hall element (111) designed to detect a component of a magnetic field in a first direction a by means of a sensitive surface of the first Hall element (111). The Hall sensor (100) further comprises a second Hall element (112) designed to detect a component of the magnetic field in a second direction b by means of a sensitive surface of the second Hall element (112). The Hall sensor (100) further comprises an electrically conductive path (120) designed to generate a calibration magnetic field. The calibration magnetic field has a significant component in the second direction b at the sensitive surface of the first Hall element (111). The calibration magnetic field also has a significant component in the first direction a at the sensitive surface of the second Hall element (112).

Description

Technical Field

[0001] This disclosure relates to magnetic field detection. Embodiments of this disclosure relate to a Hall sensor, a method for calibrating a Hall sensor, and a calibration apparatus for a Hall sensor. Background Technology

[0002] Vertical Hall sensors are particularly used for magnetic angle detection. Here, the symmetrical arrangement of the individual Hall elements and the operation of the rotating current ensure reduced interference-induced offset voltage. Consequently, vertical Hall sensors exhibit excellent amplitude synchronization and linearity.

[0003] The mechanical shear stress of a Hall sensor can cause a change in the measurement direction, resulting in errors in the angle output. This change can be largely compensated for by a shear stress sensor.

[0004] However, a deviation remains between the measurement direction and the target direction set for the Hall sensor. One possible cause of this deviation is undesirable offset stress in the shear stress sensor. Under typical production conditions, this deviation can have a dispersion on the order of a few tenths of a metric.

[0005] Therefore, there is a need for improved Hall sensors. The object of this invention can be considered as achieving such an improvement in Hall sensors. Summary of the Invention

[0006] According to a first aspect of this disclosure, a Hall sensor is provided. The Hall sensor includes a first Hall element designed to detect a component of a magnetic field in a first direction by means of a sensitive surface of the first Hall element. The Hall sensor also includes a second Hall element designed to detect a component of the magnetic field in a second direction by means of a sensitive surface of the second Hall element. The Hall sensor further includes a conductive path designed to generate a calibration magnetic field. The calibration magnetic field has a significant component in the second direction at the sensitive surface of the first Hall element. The calibration magnetic field also has a significant component in the first direction at the sensitive surface of the second Hall element.

[0007] In some embodiments, the first direction is orthogonal to the second direction.

[0008] In some embodiments, the first Hall element and / or the second Hall element are vertical Hall elements.

[0009] In some embodiments, the Hall sensor includes at least one additional first Hall element, configured to detect the component of the magnetic field in a first direction by means of the sensitive surface of the at least one additional first Hall element. The Hall sensor may also include at least one additional second Hall element, configured to detect the component of the magnetic field in a second direction by means of the sensitive surface of the at least one additional second Hall element. The calibration magnetic field may have a significant component in the second direction at the sensitive surface of the at least one additional first Hall element. The calibration magnetic field may have a significant component in the first direction at the sensitive surface of the at least one additional second Hall element.

[0010] In some embodiments, the Hall sensor further includes a shear stress sensor designed to detect mechanical shear stress at the sensitive surface of the first Hall element and at the sensitive surface of the second Hall element.

[0011] In some embodiments, the Hall sensor further includes a calibration device designed to guide current through a conductive path to generate a calibration magnetic field. The calibration device may also be designed to detect a first voltage at a first Hall element and a second voltage at a second Hall element. The first and second voltages can be induced by the calibration magnetic field. The calibration device may also be designed to determine an orientation error of the Hall sensor based on the detected first and second voltages.

[0012] In some embodiments, the calibration device is further configured to: guide a first current through a conductive path, and detect a first voltage and a second voltage during the guidance of the first current through the conductive path. The calibration device may also be configured to: guide a second current through a conductive path, and detect the first voltage and the second voltage during the guidance of the second current through the conductive path.

[0013] In some embodiments, the absolute value of the first current corresponds to the absolute value of the second current. In this embodiment, the direction of the first current is opposite to the direction of the second current.

[0014] In some embodiments, the calibration device is also designed to determine the orientation error based on the detected mechanical shear stress.

[0015] In some embodiments, the calibration magnetic field has a significant component in a first direction at the sensitive surface of the first Hall element. The calibration magnetic field may have a significant component in a second direction at the sensitive surface of the second Hall element. The calibration device may also be designed to determine the magnetic sensitivity of the Hall sensor based on a detected first voltage and a detected second voltage.

[0016] In some embodiments, the Hall sensor further includes a second conductive path. The calibration device can also be designed to guide current through the second conductive path to generate a second calibration magnetic field. The second calibration magnetic field may have a significant component in a first direction at the sensitive surface of the first Hall element. The second calibration magnetic field may have a significant component in a second direction at the sensitive surface of the second Hall element. The calibration device can also be designed to determine the magnetic sensitivity of the Hall sensor based on the voltage induced by the second calibration magnetic field at both the first and second Hall elements.

[0017] In some embodiments, the calibration device is also designed to determine the orientation error based on the determined magnetic sensitivity.

[0018] In some embodiments, the conductive path extends along at least one metallized plane of the Hall sensor at a 45° angle to the first Hall element and at a 45° angle to the second Hall element.

[0019] In some embodiments, the conductive path extends along at least one metallized plane of the Hall sensor at a 90° angle to the first Hall element and at a 90° angle to the second Hall element.

[0020] In some embodiments, the conductive path extends along at least one metallized plane in a multi-turn manner.

[0021] In some embodiments, the conductive paths are arranged at least partially symmetrically with respect to a set of Hall elements of the Hall sensor. This set of Hall elements includes a first Hall element and a second Hall element.

[0022] In some embodiments, the Hall sensor further includes a plurality of metallized planes of different thicknesses that are vertically spaced apart from each other. A conductive path may extend along one of the plurality of metallized planes. One of the plurality of metallized planes may have the highest thickness among the plurality of metallized planes.

[0023] In some embodiments, the Hall sensor is also designed to determine the angle of the Hall sensor relative to the object that causes the magnetic field based on the magnetic field.

[0024] According to a second aspect of this disclosure, a method for calibrating a Hall sensor is provided. The Hall sensor includes a first Hall element, a second Hall element, and a conductive path. The method includes guiding current through the conductive path to generate a calibration magnetic field. The method further includes determining an orientation error of the Hall sensor based on the calibration magnetic field.

[0025] In some embodiments, determining the orientation error includes detecting a first voltage at a first Hall element and a second voltage at a second Hall element. The first and second voltages are induced by a calibration magnetic field.

[0026] According to a third aspect of this disclosure, a calibration apparatus for a Hall sensor is provided. The Hall sensor includes a first Hall element, a second Hall element, and a conductive path. The calibration apparatus includes electronic circuitry designed to: guide current through the conductive path of the Hall elements to generate a calibration magnetic field. The electronic circuitry is also designed to: detect a first voltage at the first Hall element and a second voltage at the second Hall element based on the calibration magnetic field. The electronic circuitry is further designed to: determine an orientation error of the Hall sensor based on the detected first voltage and the detected second voltage. Attached Figure Description

[0027] The following examples of apparatus and / or methods are explained in detail by way of example only, with reference to the accompanying drawings.

[0028] in:

[0029] Figure 1 An example of a Hall sensor is shown;

[0030] Figure 2a -f indicates an exemplary conductive path configuration for an exemplary Hall sensor;

[0031] Figure 3 A block diagram showing an example of a calibration device for a Hall sensor; and

[0032] Figure 4 A flowchart illustrating an example of a method for calibrating a Hall sensor is shown. Detailed Implementation

[0033] Some examples will now be described in detail with reference to the accompanying drawings. However, other possible examples are not limited to the features of these embodiments described in detail. The examples may have modifications of features, as well as corresponding schemes and alternatives to the features. Furthermore, the terminology used herein to describe particular examples is not intended to limit other possible examples.

[0034] Throughout the description of the accompanying drawings, the same or similar reference numerals denote the same or similar elements or features, which may be implemented identically or in variations, while providing the same or similar function. Furthermore, in the drawings, the thickness of lines, layers, and / or regions may be exaggerated for clarity.

[0035] When using "or" to combine two elements A and B, this should be understood to disclose all possible combinations, i.e., only A, only B, and A and B, unless otherwise explicitly defined in individual cases. "At least one of A and B" or "A and / or B" can be used as alternative expressions for the same combination. Equivalent to combinations of more than two elements.

[0036] If the singular form is used, such as "a," "an," and "the," and the use of only a single element neither expressly nor imply that the definition is mandatory, other examples may also use multiple elements to implement the same functionality. If the functionality is implemented below using multiple elements, other examples may use a single element or a single processing entity to implement the same functionality. It should also be understood that the terms "comprising," "including," "having," and / or "having" describe, in their use, the presence of the described features, integers, steps, operations, processes, elements, parts, and / or groups thereof, but do not exclude the presence or addition of other features, integers, steps, operations, processes, elements, parts, and / or groups thereof.

[0037] Figure 1 An example of a Hall sensor 100 according to the present invention is shown. The Hall sensor 100 can be understood as any sensor used for detecting magnetic fields based on the Hall effect. The Hall sensor 100 can, for example, be an integrated circuit having at least one semiconductor layer. The semiconductor layer can, for example, be embedded in a recess or groove in the integrated circuit substrate (e.g., having opposite doping). The semiconductor layer can have at least one electrical contact at which a Hall voltage associated with the magnetic field can be tapped. Such a semiconductor layer can be referred to as a Hall element. The Hall element can be electrically insulated from other Hall elements having the same substrate by a layer located between the substrates.

[0038] The Hall sensor 100 includes a first Hall element 111 and a second Hall element 112. The first Hall element 111 is designed to detect the component of the magnetic field in a first direction a (and / or opposite to the first direction a) by means of the sensitive surface of the first Hall element 111. The second Hall element 112 is designed to detect the component of the magnetic field in a second direction b (and / or opposite to the second direction b) by means of the sensitive surface of the second Hall element 112.

[0039] In some embodiments, the first Hall element 111 and / or the second Hall element 112 are vertical Hall elements. Vertical Hall elements can detect magnetic fields parallel to the surface of the Hall sensor 100. A vertical Hall element can be referred to as "vertical" as long as its sensitive surface is arranged perpendicular to the surface of the Hall sensor 100. This can be particularly advantageous because the electrical contacts of the vertical Hall element only need to be located at one edge or one side of the Hall sensor 100. This simplifies the manufacture of the Hall sensor 100. Furthermore, the Hall sensor 100 can thus have high compatibility with other standard semiconductor components. In other embodiments, the first Hall element 111 and / or the second Hall element 112 have different Hall element types, such as lateral Hall elements. In some embodiments, the Hall sensor 100 integrates different Hall element types.

[0040] The directions a and b of the magnetic field components detected by the first Hall element 111 or the second Hall element 112 can be understood as different directions from each other. Therefore, directions a and b have an angular offset relative to each other that is not equal to zero. In a preferred embodiment, the first direction a is orthogonal to the second direction b. This can increase the linearity and measurement range of the magnetic field detection.

[0041] Within the meaning of this disclosure, the sensitive surface of the first Hall element 111 or the second Hall element 112 can be understood as the surface of the semiconductor layer of the respective Hall element. The sensitive surface is characterized in that it generates a Hall voltage associated with the magnetic field at the contact of the respective Hall element when a magnetic field flows through it. The Hall voltage formed here can be associated in particular with a specific component of the magnetic field, for example, with a component of the magnetic field that has a specific direction relative to the orientation of the sensitive surface. This component can, for example, have a direction perpendicular to the sensitive surface. Here, the magnetic field component can be understood as an orthogonal projection of the magnetic field onto a coordinate axis having said direction.

[0042] In some embodiments, the Hall sensor 100 is designed to determine the angle of the Hall sensor 100 relative to the object causing the magnetic field based on the magnetic field. The Hall element 100 may determine the angle, for example, based on the flux density of the magnetic field and / or the change in flux density over time. Alternatively, the Hall sensor 100 can be used in any application with magnetic field detection. For example, the Hall sensor 100 may be designed to determine the position and / or motion of the object causing the magnetic field.

[0043] The first direction a and the second direction b can be understood as the target direction, measurement direction, or expected sensitivity direction of the first Hall element 111 or the second Hall element 112. The target direction is the expected direction of the magnetic susceptibility of the corresponding sensitive surface. The target direction can be, for example, the direction that generates a Hall voltage proportional to the flux density of the corresponding component of the magnetic field. The actual direction of the first Hall element 111 or the second Hall element 112 can be understood as the actual sensitivity direction. The (angular) deviation of the actual direction relative to the target direction can be, for example, based on undesirable physical effects or technical limitations in the manufacture of the Hall sensor 100. This deviation will result in measurement errors, such as measurement errors when detecting the angle of an object that generates a magnetic field. Such measurement errors can be called orientation errors (or orthogonality errors).

[0044] The purpose of this invention can be considered as determining orientation error and compensating for it, for example, by calibrating the Hall sensor 100.

[0045] return Figure 1 The Hall sensor 100 also includes a conductive path 120. The conductive path 120 can be any electrical conductor. For example, the conductive path 120 can be an on-chip wire (WOC), that is, an electrical conductor introduced into the metallized plane of the Hall sensor 100.

[0046] The conductive path 120 is designed to generate a calibration magnetic field. This calibration magnetic field has a significant component in a second direction b at the sensitive surface of the first Hall element 111. In other words, the calibration magnetic field has a significant component in direction b at the sensitive surface of the first Hall element 111, which deviates from the target direction, direction a, of the first Hall element 111. Similarly, the calibration magnetic field has a significant component in the first direction a at the sensitive surface of the second Hall element 112.

[0047] The conductive path 120 can, for example, generate a calibration magnetic field by a current flowing through it. In this case, the direction and flux density of the calibration magnetic field are derived from electromagnetic principles. Here, the extension of the conductive path 120 can decisively influence the direction of the calibration magnetic field, and thus is of great significance in the design of the Hall sensor 100. (Reference) Figure 2a -f provides a more detailed explanation of the exemplary conductive path extension (configuration).

[0048] If the component penetrates the sensitive surface at a measurable flux density, i.e., significantly higher than the measurement accuracy of the Hall sensor 100, it can be assumed, within the meaning of this disclosure, that the calibration magnetic field has a significant component at the sensitive surface of the Hall element. In some embodiments, the component has a flux density that is not reduced or only slightly reduced (approximately 0.1% or 1%) relative to the flux density of the calibration magnetic field at the sensitive surface.

[0049] In some embodiments, such as when direction a is orthogonal to direction b, the calibration magnetic field at the sensitive surface has a significant component in the direction orthogonal to the target direction. This can improve the accuracy in detecting orientation errors of the Hall sensor 100.

[0050] exist Figure 1 In the diagram, the conductive path 120 is partially arranged within the block representing the first Hall element 111 or the second Hall element 112. This is because... Figure 1 A two-dimensional view of the Hall sensor 100. In this case, the conductive path 120 may extend partially above and / or below the first Hall element 111 and the second Hall element 112. That is, the conductive path 120 may extend vertically spaced from the first Hall element 111 and the second Hall element 112 along at least one metallized plane of the Hall sensor 100. Here, vertical spacing may refer to the Hall sensor 100's... Figure 1 The spacing in the third spatial dimension, not shown in the diagram.

[0051] exist Figure 1In the example of the Hall sensor 100 shown, the conductive path 120 extends along at least one metallized plane of the Hall sensor 100 at an angle of 45° to the first Hall element 111 and at an angle of 45° to the second Hall element 112. The 45° angle can be understood as the angle between the portion of the conductive path 120 extending above or below the respective Hall element and the sensitive surface of the respective Hall element offset therefrom (vertically). This is advantageous because the magnetic sensitivity of the first Hall element 111 and the second Hall element 112 can be additionally determined, in addition to orientation errors, by means of the calibration magnetic field formed therefrom. The 45° angle can be understood to have tolerances. For example, the angle could be 45° ± 1%, ± 0.1%, or ± 0.01%. In other embodiments, the conductive path 120 may extend at a different angle than the first Hall element 111. Figure 1 The conductive path 120 extends at the angle shown, and at a different angle than the second Hall element 112. The conductive path 120 may extend at an angle α > 0° with the first Hall element 111 and at an angle β > 0° with the second Hall element 112. In some embodiments, the conductive path 120 extends along at least one metallized plane of the Hall sensor 120 at an angle of 90° with the first Hall element 111 and at an angle of 90° with the second Hall element 112. This improves measurement accuracy when detecting orientation errors in the Hall sensor 100.

[0052] In other embodiments, the conductive path 120 may have the same characteristics as... Figure 1 The shapes shown (e.g., circular shapes) are different, or they are arranged differently in the Hall sensor 100. In some embodiments, the conductive path 120 extends along a plurality of metallized planes of the Hall sensor 100, or extends alongside the first Hall element 111 and / or the second Hall element 112.

[0053] In some embodiments, the conductive path 120 extends along at least one metallized plane in a multi-turn manner. This can increase the flux density of the calibration magnetic field and simplify the detection of the calibration magnetic field. In some embodiments, the Hall sensor 100 includes a plurality of vertically spaced metallized planes of different thicknesses, with the conductive path 120 extending along the plurality of metallized planes. In a preferred embodiment, one of the plurality of metallized planes has the highest thickness among the plurality of metallized planes. For example, the conductive path 120 may extend in one or more metallized planes designed for higher electrical power (relative to the remaining metallized planes of the Hall sensor 100).

[0054] The Hall sensor 100 can help achieve the aforementioned objective, namely, determining the orientation error of the Hall sensor 100. To this end, the Hall sensor 100 can generate a calibration magnetic field. This calibration magnetic field can be generated at the sensitive surface of the first Hall element 111 or the second Hall element 112, such that the calibration magnetic field is not "strictly" aligned with the target direction of the first Hall element 111 or the second Hall element 112. Measuring the Hall voltage generated by the calibration magnetic field allows for the deduction of the orientation error. (Reference) Figure 3 The possible implementation methods for generating the calibration magnetic field and determining the orientation error are explained in more detail.

[0055] For example, a conventional approach to determining the orientation error of a Hall sensor could be to generate a rotating magnetic field, exposing the Hall sensor to this field. The output signal of the Hall sensor's vertical signal path can then be analyzed to determine the orientation error. However, this requires specialized magnet testing hardware, which must be specifically designed for the Hall sensor. Such magnet testing hardware can be expensive and prone to failure. In contrast, the Hall sensor according to the invention, such as Hall sensor 100, can reduce the cost of calibration measurements through a WOC (Wide Orientation Container) structure. The WOC structure allows for accurate and low-cost measurement and calibration of the orientation error, for example, using standard front-end or back-end testing hardware.

[0056] In other embodiments, with Figure 1 Unlike the previous embodiment, the Hall sensor 100 includes at least one additional first Hall element, designed to detect the component of the magnetic field in a first direction a by means of the sensitive surface of the at least one additional first Hall element. In this embodiment, the Hall sensor 100 includes at least one additional second Hall element, designed to detect the component of the magnetic field in a second direction b by means of the sensitive surface of the at least one additional second Hall element. In this embodiment, the calibration magnetic field has a significant component in the second direction b at the sensitive surface of the at least one additional first Hall element and a significant component in the first direction a at the sensitive surface of the at least one additional second Hall element. For example, the Hall sensor 100 may include n ≥ 1 first Hall element and m ≥ 2 second Hall elements. This is advantageous, for example, in achieving a symmetrical structure of the Hall sensor 100 and increasing the fault tolerance of the Hall sensor 100 through redundant Hall elements.

[0057] It should be noted that, Figure 1 The arrangement or orientation of the first Hall element 111 and the second Hall element 112 relative to each other and relative to the Hall sensor 100, as well as their position in... Figure 1 The size proportions and shapes shown are for illustrative purposes only for the Hall sensor 100. In other embodiments, with Figure 1Compared to the diagram, the first Hall element 111 and the second Hall element 112 can have different arrangements, different orientations, different size ratios, and different shapes in the Hall sensor 100. In some embodiments, a group of Hall elements in the Hall sensor 100 has a point of symmetry, and the conductive path 120 is arranged at least partially symmetrically with respect to the point of symmetry. Here, the group of Hall elements includes the first Hall element 111 and the second Hall element 112. This symmetrical structure can increase the uniformity of the calibration magnetic field.

[0058] It should be noted that, Figure 1 The views in the first direction a and the second direction b are also used for illustration. In other embodiments, the first Hall element 111 and the second Hall element 112 are designed to be: with Figure 1 Compared to the example shown, the components of the detected magnetic field are located in either a first direction a or a second direction b, which extend differently in space. Specifically, the first direction a can have a different orientation relative to the second direction b than the component from... Figure 1 The resulting angles are different (in this case, an angle of approximately 90°).

[0059] refer to Figure 2a -f provides detailed information about possible design schemes for the Hall sensor according to the present invention. Figure 2a -f indicates an exemplary conductive path configuration for an exemplary Hall sensor 200.

[0060] The Hall sensor 200 includes four first Hall elements X1 to X4, designed to detect the component of the magnetic field in a first direction a by means of the sensitive surfaces of the first Hall elements X1 to X4. The Hall sensor 200 also includes four second Hall elements Y1 to Y4, designed to detect the component of the magnetic field in a second direction b orthogonal to direction a by means of the sensitive surfaces of the second Hall elements Y1 to Y4.

[0061] The first Hall elements X1 to X4 are arranged in pairs side-by-side (X1 next to X2, X3 next to X4), wherein these pairs are arranged in opposing layer regions of the Hall sensor 200. The second Hall elements Y1 to Y4 are also arranged in pairs side-by-side (Y1 next to Y2, Y3 next to Y4), wherein these pairs are arranged in opposing layer regions of the Hall sensor 200. Figure 2a In -e, the corresponding Hall elements are positioned parallel to each other. Figure 2f In this configuration, the corresponding Hall elements are diagonally opposite each other.

[0062] The arrangement of the first Hall elements X1 to X4 and the second Hall elements Y1 to Y4 relative to Figure 2a The axis shown in -f, which extends through the midpoint of the layer of Hall sensor 200, is axisymmetric.

[0063] Hall sensor 200 includes conductive path 220, designed to generate calibration magnetic field B (in Figure 2c In China, it is called B. o And in Figure 2f In China, it is called B. x The calibration magnetic field B has a significant component in the second direction b at the sensitive surfaces of the first Hall elements X1 to X4. Furthermore, the calibration magnetic field B has a significant component in the first direction a at the sensitive surfaces of the second Hall elements Y1 to Y4. The calibration magnetic field B is, for example, based on the magnetic field vector, such as... Figure 2a B(Y1) to B(Y4) are generated at the corresponding Hall elements, and when a positive current flows through the conductive path, a magnetic field vector is formed along the direction of the terminal WOC_GND of the conductive path 220.

[0064] exist Figure 2a In this structure, the conductive path 220 forms a predominantly rectangular shape due to its extension. The conductive path 220 extends along the metallization plane A (“metal layer A”, see below) of the Hall sensor 200. Figure 2a The conductive path 220 extends at a 45° angle to the first Hall elements X1 to X4 and the second Hall elements Y1 to Y4 (as shown in the diagram in -f), and extends vertically spaced apart from the first Hall elements X1 to X4 and the second Hall elements Y1 to Y4.

[0065] With the help of Figure 2a The conductive path configuration shown guides conductive path 120 through only one metallized plane A, which increases the uniformity of the calibration magnetic field B. Furthermore, the calibration magnetic field B is beneficial for... Figure 2a The conductive path configuration also has a significant component in the first direction a at the sensitive surfaces of the first Hall elements X1 to X2. Similarly, the calibration magnetic field B is for Figure 2a The conductive path configuration also has a significant component in the second direction b at the sensitive surface of the second Hall element Y1 to Y2. Therefore, Figure 2a The conductive path configuration shown can be used to calibrate the orientation error of the Hall sensor 200 and to calibrate its magnetic sensitivity.

[0066] for Figure 2a The conductive path configuration necessitates different readouts of the first Hall elements X1 to X4 and the second Hall elements Y1 to Y4 for the operating mode of the Hall sensor 200, for a first calibration mode used to determine orientation error, and for a second calibration mode used to determine magnetic sensitivity. The readout and manipulation of the Hall elements in the first or second calibration mode can be performed, for example, by a suitable calibration device. (Reference) Figure 3 An example of this calibration device will be explained in more detail.

[0067] In operating mode, Hall sensor 200 detects, for example, a magnetic field induced by a magnetic object. Ideally, the calibration magnetic field B is absent in operating mode. For operating mode, the output signal y is the sum of the individual output signals y1 to y4 of the corresponding second Hall elements Y1 to Y4 to determine the component of the magnetic field in direction b. Ideally, y is proportional to the average flux density of the component in direction b in operating mode. For example, the individual output signal could be the Hall voltage of the corresponding Hall element. A similar process is performed in the first Hall elements X1 to X2 to detect the component of the magnetic field in direction a.

[0068] In the first calibration mode, ideally, there is no magnetic field. In this mode, the calibration device generates a calibration magnetic field B and reads out the output signal y = y1 - y2 - y3 + y4. In this mode, y is ideally proportional to the component of the calibration magnetic field B in direction a. Similarly, this is performed on the first Hall elements X1 and X2 to detect the component of the calibration magnetic field B in direction b. In this way, the calibration device can determine the orientation error of the Hall sensor 200.

[0069] In the second calibration mode, ideally, there is no magnetic field. In this mode, the calibration device generates a calibration magnetic field B and reads out the output signal y = y1 + y2 - y3 - y4. In this mode, y is ideally proportional to the component of the calibration magnetic field B in direction b. A similar process can be performed with the first Hall elements X1 to X4 to detect the component of the calibration magnetic field B in direction a. In this way, the calibration device can determine the magnetic sensitivity of the Hall sensor 200.

[0070] exist Figure 2b In, the configuration of conductive paths and Figure 2a The difference lies in that the conductive path 220 extends along the metallization plane A in a multi-turn manner. When the conductive path 220 is led back to WOC-GND, a through-hole ("metallic via") is provided to the metallization plane B ("metal layer B"). Figure 2b The conductive path configuration in the middle is relative to Figure 2a The advantage of the conductive path configuration is that it can amplify the calibration magnetic field generated through the conductive path 220 without increasing the current through the conductive path 220.

[0071] exist Figure 2c In this configuration, the conductive path 220 extends in a predominantly cross shape. Here, the conductive path 220 extends within the metallization planes A and B. The conductive path 220 extends at a 90° angle to both the first Hall elements X1 to X4 and the second Hall elements Y1 to Y4. This improves measurement accuracy when detecting orientation errors.

[0072] exist Figure 2cIn this configuration, the Hall sensor 200 also includes a second conductive path 230. The conductive path 230 is parallel to the orientation of the first Hall elements X1 to X4 and the orientation of the second Hall elements Y1 to Y4. The conductive path 230 is designed to generate a second calibration magnetic field B. p (exist Figure 2f It is called B in Chinese. y Second calibration magnetic field B p The first Hall elements X1 to X4 have a significant component in the first direction a at their sensitive surfaces. Furthermore, the second calibration magnetic field B... p The sensitive surfaces of the second Hall elements Y1 to Y4 have a significant component in the second direction b.

[0073] In the first calibration mode, the calibration device generates a calibration magnetic field B. o This is to determine the orientation error of the Hall sensor 200. In the second calibration mode, the calibration device generates a second calibration magnetic field B. p To determine the magnetic sensitivity. The output signal y of the Hall sensor 200 can be read out in a manner similar to... Figure 2a The method described is used.

[0074] exist Figure 2d In, the configuration of conductive paths and Figure 2c The difference lies in that the majority of conductive path 220 is directed to the outside of the extension of the second conductive path 230. This can be advantageous for certain sensor designs.

[0075] exist Figure 2e In, the configuration of conductive paths and Figure 2d The difference is that the conductive path 230 extends in a multi-turn manner.

[0076] exist Figure 2f In this sensor, the Hall sensor 200 also includes two conductive paths: conductive path 220 and a second conductive path 230. Both conductive paths 220 and 230 have a predominantly rectangular orientation. Conductive path 220 extends parallel to the first Hall elements X1 to X4 and forms a 90° angle with the second Hall elements Y1 to Y4. The second conductive path 230 extends at a 90° angle with the first Hall elements X1 to X4 and extends parallel to the second Hall elements Y1 to Y4.

[0077] In the first calibration mode, the calibration device can guide a positive current through conductive path 220 toward WOC_GND to generate a calibration magnetic field B. xThe calibration device can determine the orientation error of the second Hall elements Y1 to Y4 based on the output signal y = -y1 - y2 + y3 + y4. Furthermore, in the first calibration mode, the calibration device can guide a positive current through the second conductive path 230 towards WOC_GND to generate a second calibration magnetic field B. y The calibration device can determine the orientation error of the first Hall elements X1 to X4 based on the output signal x = -x1 - x2 + x3 + x4.

[0078] In the second calibration mode, the calibration device can determine the applied second calibration magnetic field B based on the output signal y = y1 + y2 - y3 - y4. y The magnetic sensitivity of the second Hall elements Y1 to Y4 is determined. In the second calibration mode, the calibration device can also determine the magnetic sensitivity of the first calibration magnetic field B when the output signal x = x1 + x2 - x3 - x4 is applied. x The magnetic sensitivity of the first Hall element X1 to X4.

[0079] Figure 3 A block diagram of an exemplary calibration device 340 for a Hall sensor 300 is shown. The calibration device 340 can be used to calibrate the Hall sensor 300, for example, before the Hall sensor 300 is put into operation, and is connected to the electrical contacts of the Hall sensor 300, for example, via electrical contacts of the calibration device 340. After the Hall sensor 300 is put into operation, the calibration device 340 can be detached from the Hall sensor 300.

[0080] The calibration device 340 can be designed to configure the Hall sensor 300, i.e., the calibration device 340 can be connected to the Hall sensor 300 in a specific manner so as to perform voltage or current measurement at the Hall sensor 300.

[0081] The Hall sensor 300 includes at least one first Hall element 311, designed to detect the component of a magnetic field in a first direction by means of the sensitive surface of the first Hall element 311. The first Hall element 311 has a first output signal path X, at which the Hall voltage of at least one first Hall element 311 can be tapped. Depending on the configuration via the calibration device 340, the output signal path X can represent a specific output signal, such as the corresponding Hall voltage of a particular first Hall element or the sum of the Hall voltages of all first Hall elements 311.

[0082] The Hall sensor 300 also includes at least one second Hall element 312, designed to detect the component of the magnetic field in a second direction by means of the sensitive surface of the second Hall element 312. The second Hall element 312 has a second output signal path Y, at which the Hall voltage of at least one second Hall element 312 can be tapped.

[0083] The Hall sensor 300 also includes a conductive path (WOC) 320 designed to generate a calibration magnetic field. The calibration magnetic field has a significant component in a second direction at the sensitive surface of the first Hall element 311. The calibration magnetic field also has a significant component in the first direction at the sensitive surface of the second Hall element 312.

[0084] The Hall sensor 300 also includes a shear stress sensor (σ xy )350 is designed to detect mechanical shear stress at the sensitive surface of the first Hall element 311 and the sensitive surface of the second Hall element 312.

[0085] The Hall sensor 300 also includes a data memory 360 (“memory”) designed to store compensation coefficients derived from calibration measurements by the calibration device 340. For example, the Hall sensor 300 also includes processing circuitry 370 (“calc_angle”) to determine the magnetic field based on the output signal paths X and Y and the compensation coefficients, and, for example, to derive the angle of the object causing the magnetic field.

[0086] Figure 3 The arrows shown indicate the signal flow between the first output signal path X, the second output signal path Y, the conductive path 320, the shear stress sensor 350, the data memory 360, the processing circuit 370, and the calibration device 340.

[0087] The calibration device 340 includes electronic circuitry ( Figure 3 (Not shown in the image). The electronic circuitry is designed to direct current through the conductive path 320 of the Hall sensor 300 to generate a calibration magnetic field. For example, the electronic circuitry can connect a current source to the conductive path 320 to direct current through the conductive path 320.

[0088] The electronic circuitry is also designed to detect a first voltage at the first Hall element 311 and a second voltage at the second Hall element 312 based on a calibration magnetic field. The first and second voltages can be at least largely caused by the calibration magnetic field. For example, the electronic circuitry can read out the first output signal path X of the first Hall element 311 to detect the first voltage, and read out the second output signal path Y of the second Hall element 312 to detect the second voltage. The electronic circuitry is also designed to determine the orientation error of the Hall sensor 300 based on the detected first and second voltages. The electronic circuitry may include, for example, processing circuitry for processing the signals read from the first output signal path X and the second output signal path Y. For example, the electronic circuitry may determine a compensation coefficient based on the detected first and second voltages and store it in the data memory 350.

[0089] therefore, Figure 1The calibration and testing environment for Hall sensor 300, which has a specific WOC structure (320), is shown. Calibration device 340 can be designed to configure output signal paths X and Y to set a specific calibration mode. Calibration device 340 can read out output signal paths X and Y and calculate specific compensation coefficients. Measurement accuracy can be improved if calibration device 340 performs two calibration measurements separately: calibration of the magnetic sensitivity of Hall sensor 300 or the corresponding Hall element and further calibration of orientation error. Each calibration will require specific configuration of output signal paths X and Y and / or adaptation of the current through conductive path 320 (e.g., current magnitude, current direction, or current feed point).

[0090] The calibration device 340 can, for example, determine the magnetic sensitivity and orientation error of the Hall sensor 300 before it is put into operation. During operation of the Hall sensor 300, the orientation error can be compensated to improve the measurement accuracy of the Hall sensor 300.

[0091] In other embodiments, calibration device 340 can also be used to calibrate other Hall sensors according to the invention, such as Hall sensor 100 or 200. Calibration device 340 can be considered as part of or separate from the Hall sensor according to the invention.

[0092] The following is an example explaining how the calibration device 340 can determine orientation errors:

[0093] For example, calibration device 340 can be designed to guide a first current through conductive path 320 and detect a first voltage (at the first Hall element 311) and a second voltage (at the second Hall element 312) during the guidance of the first current through conductive path 320. Guiding the current through conductive path 320 induces a calibration magnetic field. The direction of the magnetic field lines of the calibration magnetic field can be determined decisively by the extension of conductive path 320. The direction of the magnetic field lines of the calibration magnetic field can be determined absolutely by the extension of conductive path 320. Figure 2a The -f symbol indicates different extensions of the conductive path. The flux density of the calibration magnetic field can be decisively affected by the magnitude of the current flowing through the conductive path 320. The calibration magnetic field generates a Hall voltage (first voltage) at the first Hall element 311 and a Hall voltage (second voltage) at the second Hall element 312. Because the calibration magnetic field has a significant component at the sensitive surface of the corresponding Hall element that deviates from the target direction of the corresponding Hall element, the orientation error, representing the deviation of the actual measurement direction from the target direction, can be determined by measurement using the calibration magnetic field.

[0094] The calibration device 340 can be additionally designed to guide a second current through the conductive path 320 and detect a first voltage and a second voltage during the guidance of the second current through the conductive path 320. For example, the absolute value of the first current can correspond to the absolute value of the second current, and the direction of the first current can be opposite to the direction of the second current. Here, a calibration magnetic field with the same flux density as the first current but in the opposite direction is formed. The orientation error can be determined from the difference between the measurement of the first current and the measurement of the second current.

[0095] The calibration device 340 can also be designed to determine the magnetic sensitivity of the Hall sensor 300 based on a detected first voltage and a detected second voltage. For example, the calibration magnetic field may have a significant component in a first direction at the sensitive surface of the first Hall element 311 and a significant component in a second direction at the sensitive surface of the second Hall element 312. For example, this is for... Figure 2a The conductive path configuration shown is as described. Here, the magnetic field lines for calibrating the magnetic field pass through the sensitive surface at an angle of approximately 45°.

[0096] The Hall sensor 300 may include a second conductive path separate from the conductive path 320. Here, the current guided through the conductive path 320 for measurement does not flow through the second conductive path, allowing independent measurements based on both the conductive path 320 and the second conductive path. Preferably, the second conductive path has a different extension than the conductive path 320, so that when current is guided through the second conductive path, a second calibration magnetic field with a different direction than the aforementioned calibration magnetic field is generated.

[0097] The calibration device 340 can also be designed to guide current through a second conductive path to generate a second calibration magnetic field. This second calibration magnetic field may, for example, have a significant component in a first direction at the sensitive surface of the first Hall element 311 and a significant component in a second direction at the sensitive surface of the second Hall element 312. The calibration device 340 can also be designed to determine the magnetic sensitivity of the Hall sensor 300 based on the voltages at the first Hall element 311 and the second Hall element 312 induced by the second calibration magnetic field. The calibration device 340 can be designed to determine the orientation error based on the determined magnetic sensitivity. The magnetic sensitivity may, for example, represent the change in the output voltage (first voltage or second voltage) of the first Hall element 311 or the second Hall element 312 relative to a change in the calibration magnetic field, where the change in the calibration magnetic field causes a change in the output voltage. Therefore, the magnetic sensitivity can also represent the relationship between the change in output voltage and the change in the direction of the calibration magnetic field, which is advantageous for determining the orientation error.

[0098] In some embodiments, the calibration device 340 is also designed to determine the orientation error based on the detected mechanical shear stress (e.g., initial mechanical shear stress). In particular, this can improve the accuracy of measurements at the calibration magnetic field, since the mechanical shear stress can be reflected as an offset in the detected stress.

[0099] The following example illustrates how calibration device 340 can determine orientation error:

[0100] For example, if the calibration device 340 performs two calibration measurements, namely, the first (1.): a calibration measurement for detecting the magnetic sensitivity of the first Hall element and the second Hall element; and the second (2.): a calibration measurement for determining the orientation error, the accuracy in detecting the compensation coefficient can be improved. Each calibration measurement will require configuring the first output signal path X, the second output signal path Y, and / or the current through the conductive path WOC.

[0101] 1. Calibration measurements used to determine magnetic sensitivities Sx and Sy

[0102] 1.1. Set the first output signal path X and the second output signal path Y to the calibration mode used to determine magnetic sensitivity;

[0103] 1.2. In the calibration mode of 1.1, guide the positive current through the WOC conductive path;

[0104] 1.3. Read the value X from the first output signal path X. p and read the value Y from the second output signal path Y p Storage X p and Y p ;

[0105] 1.4. Guide the negative current through the WOC conduction path in the calibration mode of 1.1;

[0106] 1.5. Read the value X from the first output signal path X. n and read the value Y from the second output signal path Y n Storage X n and Y n ;

[0107] 1.6. Determine the magnetic sensitivity Sx = (X p -X n )·ks and Sy=(Y p -Y n )·ks;

[0108] (ks is the WOC factor related to sensitivity)

[0109] 1.7. Store Sx and Sy in data storage 350.

[0110] 2. Calibration measurements used to determine orientation errors dΦx and dΦy

[0111] 2.1. From the shear stress sensor σ xy Read the initial shear stress σ0 and store the initial shear stress σ0;

[0112] 2.2. Set the first output signal path X and the second output signal path Y to the calibration mode used to determine the orientation error;

[0113] 2.3. In the calibration mode of 2.2, guide the positive current through the WOC conductive path;

[0114] 2.4. Read the value X from the first output signal path X. p and read the value Y from the second output signal path Y p Storage X p and Y p ;

[0115] 2.5. In the calibration mode of 2.2, guide the negative current through the WOC conductive path;

[0116] 2.6. Read the value X from the first output signal path X. n and read the value Y from the second output signal path Y n Storage X n and Y n ;

[0117] 2.7. Determine the orientation error (deviation from the target measurement direction) dΦx=arcsin((Xp-Xn) / Sx*ko) and dΦy=arcsin((Yp-Yn) / Sy*ko);

[0118] (ko is an orientation-related WOC factor)

[0119] 2.8. Determine the initial orientation error OE0 = dΦy - dΦx;

[0120] 2.9. Store OE0 in data storage 350.

[0121] 3. Operating Mode: This mode detects the angle of the object that generates the magnetic field.

[0122] 3.1. Reading the shear stress sensor σ xy ;

[0123] 3.2. Estimate the current orientation error OE = OE0 + f(σ) xy ,σ0);

[0124] (f(σ xyσ0) represents the orientation error and shear stress of the sensor σ xy (a function relating the output signal to the initial shear stress σ0)

[0125] 3.3. Set the first output signal path X and the second output signal path Y to the operating mode;

[0126] 3.4. Read the first output signal path X and the second output signal Y;

[0127] 3.5. Compensate for the estimated current orientation error OE in the values ​​read from 3.4;

[0128] 3.6. Determine the object's angle based on the compensated values ​​from 3.5.

[0129] The following examples illustrate how the principles upon which this disclosure is based can be applied to multiple sensor channels:

[0130] Specifically, the output signal X is modeled as a function of the applied magnetic field B according to Equation 1 below. For all the following formulas: vectors are written in bold; the absolute value of a vector is marked by a vertical line; normalized unit vectors are written with diacritics; scalars are written in italics; angles are represented by Greek letters; and angular deviations are marked with the lowercase letter d.

[0131]

[0132] Formula 1 describes the magnetic sensitivity Sx, magnetic offset X0, and actual sensitivity direction (actual direction).

[0133] To determine X(B), multiple measurements can be taken and averaged, for example, to eliminate the influence of sensor noise. For example, the magnetic offset X0 can be measured when no magnetic field is applied, i.e., when X0 = X(0). Alternatively, the magnetic offset X0 can be eliminated if only the difference between the output signal X and the magnetic field in the magnetic field is considered for the magnetic fields B+ and B- formed by the positive or negative current passing through the conductive path WOC, for example, ΔX(ΔB) = X(B+) - X(B-).

[0134] When measuring in calibration mode to determine magnetic sensitivity, consider the magnetic field along the expected sensitivity direction (target direction, lowercase letter). The components of ) are used to derive Formula 2:

[0135]

[0136] The actual applied magnetic field |Bx| can be approximated by a WOC factor (1 / 2ks) related to sensitivity. These factors can be calculated (e.g., using finite element simulation) or determined by precise reference measurements. The applied magnetic field is proportional to the applied current, and thus the WOC factor (1 / 2ks) is inversely proportional to the current intensity. (The text then abruptly shifts to a seemingly unrelated topic: "within the expected sensitivity direction...") and actual sensitivity direction The deviation of the scalar product is negligible. This is reasonable when the deviation dΦx is small, and may only result in a difference between (dΦx) and... 2 The proportional sensitivity Sx has low inaccuracy. Therefore, the sensitivity Sx can be calculated using Equation 3.

[0137] Sx=ks·ΔX(ΔBx) Formula 3

[0138] To measure orientation error, the direction perpendicular to the desired sensitivity direction, i.e., along the output signal path Y, can be transformed via the output signal path X. The magnetic field in the direction of sensitivity. This yields Formula 4:

[0139]

[0140] The actual applied magnetic field magnitude |By| can be approximated based on the orientation-dependent WOC factor (1 / 2ko). (1 / 2ko) can also be determined in a similar manner to (1 / 2ks), for example, by means of finite element simulation or by using the most accurate possible reference measurement. The scalar product in Equation 4... The expected sensitivity direction corresponding to the output signal path Y and the actual sensitivity direction of the output signal path X Angle between The cosine of .

[0141] In an ideal situation, the angle It can be 90°. (Angle) It can be related to the deviation dΦx (phase shift of the output signal X), for example, by The form is given by substituting into Formula 4 and solving for dΦx, resulting in Formula 5:

[0142] dΦx=arcsin(ko·(ΔX(ΔBy)) / Sx) Formula 5

[0143] Similarly, this can be done in the output signal path Y:

[0144] Sy = ks·ΔY(ΔBy);

[0145] dΦy=arcsin(ko·(ΔY(-ΔBx)) / Sy) Formula 6

[0146] The orientation error (OE) can be calculated using formula 7:

[0147] OE=dΦy–dΦx Formula 7

[0148] It should be noted that the processing methods described in Formulas 1 to 7 and the detailed process description above are merely examples for calibrating Hall sensors. To illustrate calibration in the general manner according to this disclosure, Figure 4 A more abstract example is shown below. Figure 4 A flowchart illustrating an example of a method 400 for calibrating a Hall sensor such as Hall sensor 100, 200, or 300 is shown. The Hall sensor includes a first Hall element, a second Hall element, and a conductive path. Method 400 includes directing current 410 through the conductive path to generate a calibration magnetic field, and determining 420 the orientation error of the Hall sensor based on the calibration magnetic field.

[0149] Optionally, determining the orientation error at 420 also includes detecting a first voltage at the first Hall element and a second voltage at the second Hall element at 430. Here, the first and second voltages are induced by a calibration magnetic field.

[0150] In some embodiments, determining the 420 orientation error may include comparing a first voltage and a second voltage with a (corresponding) reference voltage. This reference voltage for the Hall sensor or the first Hall element and the second Hall element may be a voltage that should be applied to the respective Hall element when the calibration magnetic field is activated, provided that there is a negligible small orientation error or no orientation error exists.

[0151] Further details and aspects of method 400 are explained in the context of the proposed technique or one or more of the examples described above, such as references. Figure 3 Method 400 may include one or more additional optional features corresponding to one or more aspects of the proposed technology or one or more examples of the above examples.

[0152] Method 400 can determine the orientation error of a Hall sensor. Conventional methods for determining the orientation error may include, for example, testing the Hall sensor in a rotating magnetic field. Method 400 can be performed without the testing hardware typically required by conventional methods, which would be expensive and prone to failure.

[0153] The following sections relate to other embodiments:

[0154] Example (1) relates to a Hall sensor. The Hall sensor includes a first Hall element designed to detect a component of a magnetic field in a first direction by means of a sensitive surface of the first Hall element. The Hall sensor also includes a second Hall element designed to detect a component of a magnetic field in a second direction by means of a sensitive surface of the second Hall element. The Hall sensor also includes a conductive path designed to generate a calibration magnetic field, wherein the calibration magnetic field has a significant component in the second direction at the sensitive surface of the first Hall element and a significant component in the first direction at the sensitive surface of the second Hall element.

[0155] Example (2) relates to Example (1), where the first direction is orthogonal to the second direction.

[0156] Example (3) relates to Example (1) or Example (2), wherein the first Hall element and / or the second Hall element are vertical Hall elements.

[0157] Example (4) relates to one of the foregoing examples, wherein the Hall sensor further includes at least one additional first Hall element, designed to detect the component of the magnetic field in a first direction by means of the sensitive surface of the at least one additional first Hall element. Here, the Hall sensor also includes at least one additional second Hall element, designed to detect the component of the magnetic field in a second direction by means of the sensitive surface of the at least one additional second Hall element. Here, the calibration magnetic field has a significant component in the second direction at the sensitive surface of the at least one additional first Hall element, and a significant component in the first direction at the sensitive surface of the at least one additional second Hall element.

[0158] Example (5) relates to one of the foregoing examples, wherein the Hall sensor further includes a shear stress sensor designed to detect mechanical shear stress at the sensitive surface of the first Hall element and at the sensitive surface of the second Hall element.

[0159] Example (6) relates to one of the foregoing examples, wherein the Hall sensor further includes a calibration device designed to guide current through a conductive path to generate a calibration magnetic field. Here, the calibration device is designed to detect a first voltage at a first Hall element and a second voltage at a second Hall element. The first and second voltages are induced here by the calibration magnetic field. Here, the calibration device is also designed to determine the orientation error of the Hall sensor based on the detected first and second voltages.

[0160] Example (7) relates to Example (6), wherein the calibration device is further designed to guide a first current through a conductive path and to detect a first voltage and a second voltage during the guiding of the first current through the conductive path. The calibration device is also designed to guide a second current through the conductive path and to detect the first voltage and the second voltage during the guiding of the second current through the conductive path.

[0161] Example (8) relates to Example (7), where the absolute value of the first current corresponds to the absolute value of the second current, and the direction of the first current is opposite to the direction of the second current.

[0162] Example (9) relates to one of Examples (5) and Examples (6) through (8), wherein the calibration device is also designed to determine the orientation error based on the detected mechanical shear stress.

[0163] Example (10) relates to one of Examples (6) to (9), wherein the calibration magnetic field has a significant component in a first direction at the sensitive surface of the first Hall element and a significant component in a second direction at the sensitive surface of the second Hall element. Here, the calibration device is also designed to determine the magnetic sensitivity of the Hall sensor based on the detected first voltage and the detected second voltage.

[0164] Example (11) relates to one of Examples (6) to (9), wherein the Hall sensor further includes a second conductive path. Here, the calibration device is also designed to guide current through the second conductive path to generate a second calibration magnetic field. Here, the second calibration magnetic field has a significant component in a first direction at the sensitive surface of the first Hall element and a significant component in a second direction at the sensitive surface of the second Hall element. Here, the calibration device is also designed to determine the magnetic sensitivity of the Hall sensor based on the voltage induced by the second calibration magnetic field at the first and second Hall elements.

[0165] Example (12) relates to Example (10) or (11), wherein the calibration device is also designed to determine the orientation error based on the determined magnetic sensitivity.

[0166] Example (13) relates to one of the foregoing examples, wherein the conductive path extends vertically spaced apart from the first Hall element and the second Hall element along at least one metallized plane of the Hall sensor.

[0167] Example (14) relates to Example (13), wherein the conductive path extends along at least one metallized plane at a 45° angle to the first Hall element and at a 45° angle to the second Hall element.

[0168] Example (15) relates to Example (13), wherein the conductive path extends along at least one metallized plane at a 90° angle to the first Hall element and at a 90° angle to the second Hall element.

[0169] Example (16) relates to one of Examples (13) to (15), wherein the conductive path extends along at least one metallized plane in a multi-turn manner.

[0170] Example (17) relates to one of the foregoing examples, wherein the conductive paths are arranged at least partially symmetrically with respect to a symmetrical point of a set of Hall elements of the Hall sensor. Here, the set of Hall elements includes a first Hall element and a second Hall element.

[0171] Example (18) relates to one of the foregoing examples, wherein the Hall sensor further includes a plurality of metallization planes of different thicknesses that are vertically spaced apart from each other. Here, the conductive path extends along one of the plurality of metallization planes, and this metallization plane in the plurality of metallization layers has the largest thickness among the plurality of metallization planes.

[0172] Example (19) relates to one of the aforementioned examples, wherein the Hall sensor is also designed to determine the angle of the Hall sensor relative to the object that causes the magnetic field based on the magnetic field.

[0173] Example (20) relates to a method for calibrating a Hall sensor, wherein the Hall sensor includes a first Hall element, a second Hall element, and a conductive path. The method includes guiding current through the conductive path to generate a calibration magnetic field, and determining the orientation error of the Hall sensor based on the calibration magnetic field.

[0174] Example (21) relates to Example (20), wherein determining the orientation error further includes detecting a first voltage at the first Hall element and a second voltage at the second Hall element. Here, the first and second voltages are induced by a calibration magnetic field.

[0175] Example (22) relates to a calibration apparatus for a Hall sensor, wherein the Hall sensor includes a first Hall element, a second Hall element, and a conductive path. Here, the calibration apparatus includes electronic circuitry designed to guide current through the conductive path of the Hall elements to generate a calibration magnetic field, and to detect a first voltage at the first Hall element and a second voltage at the Hall element based on the calibration magnetic field. Here, the electronic circuitry is also designed to determine the orientation error of the Hall sensor based on the detected first voltage and the detected second voltage.

[0176] Aspects and features described in a particular example from the previous examples can also be combined with one or more other examples to replace the same or similar features of those other examples, or additionally introduce those features into those other examples.

[0177] Examples may also be or relate to a (computer) program that includes program code that performs one or more of the methods described above when executed on a computer, processor, or other programmable hardware component. Therefore, the steps, operations, or processes in the different methods described above may also be performed by a programmed computer, processor, or other programmable hardware component. Examples may also cover program storage devices, such as digital data storage media, which are machine, processor, or computer readable and encoded and / or contain machine-executable, processor-executable, or computer-executable programs and instructions. For example, a program storage device may include or be a digital storage device, a magnetic storage medium such as a disk and magnetic tape, a hard disk drive, or optionally an optically readable digital data storage medium. Other examples may also include computers, processors, control units, (field-programmable arrays) ((F)PLAs), (field-programmable gate arrays) ((F)PGAs), graphics processing units (GPUs), application-specific integrated circuits (ASICs), integrated circuits (ICs), or system-on-a-chip (SoC) systems programmed to perform the steps of the methods described above.

[0178] It should also be understood that the disclosure of steps, processes, operations, or functions in the specification or claims should not be construed as implying that these operations necessarily depend on the described order, unless explicitly stated in individual cases or necessary for technical reasons. Therefore, the preceding description does not limit the execution of several steps or functions to a certain order. Furthermore, in other examples, a single step, function, process, or operation may include and / or be decomposed into several sub-steps, sub-functions, sub-processes, or sub-operations.

[0179] If aspects of a device or system have already been described, these aspects should also be understood as descriptions of the corresponding methods. For example, the frames, devices, or functional aspects of a device or system may correspond to features of the corresponding method, such as method steps. Therefore, aspects describing a method should also be understood as descriptions of corresponding frames, elements, characteristics, or functional features of the corresponding device or system.

[0180] The following claims are thus incorporated into the detailed description, wherein each claim may be taken independently as a separate example. It should also be noted that although in the claims a dependent claim refers to a specific combination with one or more other claims, other examples may also include combinations of dependent claims with the subject matter of any other dependent or independent claim. Such combinations are expressly set forth herein unless it is indicated in individual cases that a particular combination is not intended to be used. Furthermore, with respect to any other independent claim, the features of the claim should also be included, even if the claim is not directly defined as dependent on that other independent claim.

Claims

1. A Hall sensor (100), comprising: a first Hall element (111) designed to detect a component of a magnetic field in a first direction a by means of a sensitive surface of the first Hall element (111); a second Hall element designed to detect a component of the magnetic field in a second direction b by means of a sensitive surface of the second Hall element (112); and a conductive path (120) designed to generate a calibration magnetic field, wherein the calibration magnetic field has a significant component in the second direction b at the sensitive surface of the first Hall element (111), and wherein the calibration magnetic field has a significant component in the first direction a at the sensitive surface of the second Hall element (112).

2. The Hall sensor (100) according to claim 1, wherein the first direction a is orthogonal to the second direction b.

3. The Hall sensor (100) according to claim 1 or 2, wherein the first Hall element (111) and / or the second Hall element (112) is a vertical Hall element.

4. The Hall sensor (100) according to claim 1 or 2, further comprising: at least one further first Hall element designed to detect a component of the magnetic field in the first direction a by means of a sensitive surface of the at least one further first Hall element; and at least one further second Hall element designed to detect a component of the magnetic field in the second direction b by means of a sensitive surface of the at least one further second Hall element; wherein the calibration magnetic field has a significant component in the second direction b at the sensitive surface of the at least one further first Hall element, and wherein the calibration magnetic field has a significant component in the first direction a at the sensitive surface of the at least one further second Hall element.

5. The Hall sensor (100) according to claim 1, further comprising: a calibration device designed to: direct a current through the conductive path (120) to generate the calibration magnetic field; detect a first voltage at the first Hall element (111); detect a second voltage at the second Hall element (112), wherein the first voltage and the second voltage are caused by the calibration magnetic field; and determine an orientation error of the Hall sensor (100) based on the detected first voltage and the detected second voltage.

6. The Hall sensor (100) according to claim 5, wherein the calibration device is further designed to: direct a first current through the conductive path (120); detect the first voltage and the second voltage during directing the first current through the conductive path (120); direct a second current through the conductive path (120); and detect the first voltage and the second voltage during directing the second current through the conductive path (120).

7. The Hall sensor (100) according to claim 5 or 6, wherein the calibration magnetic field has a significant component in the first direction a at the sensitive surface of the first Hall element (111), ​ ​ ​ wherein the calibration magnetic field has a significant component in the second direction b at the sensitive surface of the second Hall element (112), and wherein the calibration device is further designed to determine a magnetic sensitivity of the Hall sensor (100) based on the detected first voltage and the detected second voltage.

8. The Hall sensor (100) according to claim 5 or 6, further comprising: a second electrically conductive path, wherein the calibration device is further designed to: direct a current through the second electrically conductive path to generate a second calibration magnetic field, wherein the second calibration magnetic field has a significant component in the first direction a at the sensitive surface of the first Hall element (111), and wherein the second calibration magnetic field has a significant component in the second direction b at the sensitive surface of the second Hall element (112); and determine a magnetic sensitivity of the Hall sensor (100) based on the voltages induced at the first Hall element (111) and at the second Hall element (112) by the second calibration magnetic field.

9. The Hall sensor (100) according to claim 1, wherein the electrically conductive path (120) extends along at least one metallized plane of the Hall sensor (100) at a 45° angle to the first Hall element (111) and at a 45° angle to the second Hall element (112).

10. The Hall sensor (100) according to claim 1, wherein the electrically conductive path (120) extends along at least one metallized plane of the Hall sensor (100) at a 90° angle to the first Hall element (111) and at a 90° angle to the second Hall element (112).

11. The Hall sensor (100) according to claim 9 or 10, wherein the electrically conductive path (120) extends in a multi-turn manner along the at least one metallized plane.

12. The Hall sensor (100) according to claim 1 or 2, wherein the electrically conductive path (120) is arranged at least partially symmetrically with respect to a point of symmetry of a set of Hall elements of the Hall sensor (100), and wherein the set of Hall elements comprises the first Hall element (111) and the second Hall element (112).

13. A method (400) for calibrating a Hall sensor, wherein the Hall sensor comprises a first Hall element, a second Hall element and an electrically conductive path, the method comprising: directing (410) a current through the electrically conductive path to generate a calibration magnetic field; and determining (420) an orientation error of the Hall sensor from the calibration magnetic field; wherein the first Hall element is designed to detect a component of a magnetic field in a first direction a by means of a sensitive surface of the first Hall element; wherein the second Hall element is designed to detect a component of the magnetic field in a second direction b by means of a sensitive surface of the second Hall element; wherein the calibration magnetic field has a significant component in the second direction b at the sensitive surface of the first Hall element; and wherein the calibration magnetic field has a significant component in the first direction a at the sensitive surface of the second Hall element.

14. The method (400) of claim 13, wherein determining (420) the orientation error further comprises: detecting (430) a first voltage at the first Hall element and a second voltage at the second Hall element, wherein the first voltage and the second voltage are caused by the calibration magnetic field.

15. A calibration device (340) for a Hall sensor (300), wherein the Hall sensor (300) comprises a first Hall element (311), a second Hall element (312) and an electrically conductive path (320), the calibration device comprising: an electronic circuit designed to: direct a current through the electrically conductive path (320) of the Hall sensor (300) to generate a calibration magnetic field; detect a first voltage at the first Hall element (311) and a second voltage at the second Hall element (312) based on the calibration magnetic field; and determine an orientation error of the Hall sensor (300) based on the detected first voltage and the detected second voltage; wherein the first Hall element is designed to detect a component of a magnetic field in a first direction a by means of a sensitive surface of the first Hall element; wherein the second Hall element is designed to detect a component of the magnetic field in a second direction b by means of a sensitive surface of the second Hall element; wherein the calibration magnetic field has a significant component in the second direction b at the sensitive surface of the first Hall element; and wherein the calibration magnetic field has a significant component in the first direction a at the sensitive surface of the second Hall element.

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