Stress solving method of thin substrate base, solving device and computer terminal

Abstract

The present invention belongs to the field of precision measurement and analysis technology, and specifically relates to a method for solving the stress of a thin substrate, a solving device, and a computer terminal. The method includes: obtaining the elastic modulus E, Poisson's ratio μ, thickness h, diameter D of the thin substrate, the thickness t of the film, the film stress σ, and the curvature coefficients a and b of the thin substrate after deformation; according to E, μ, h, D, t, σ, a, and b, the radial stress σ is obtained by a designed radial stress calculation model. rr The design method for the radial stress calculation model is: #imgabs0# where z is the coordinate of the thin substrate on the Z axis. The present invention can also obtain circumferential stress using the designed radial stress calculation model. The present invention uses a mechanical calculation method to obtain the stress state in the base of a large deformation thin substrate. This method can be used to quickly and conveniently solve the stress in the base of large deformation thin substrates of different materials and sizes.

Description

Technical Field

[0001] The present invention belongs to the technical field of precision measurement and analysis, and relates to a method for solving the stress of a thin substrate, in particular to a method for solving the stress of a base of a thin substrate, a device for solving the stress of a base of a thin substrate, and a computer terminal using the stress solving method. Background Art

[0002] A thin substrate is a thin plate in mechanics. Its geometric characteristic is circular, with a thickness much smaller than its diameter. It consists of two layers: a film and a base. Even circular plates subjected to mechanical processing and resulting in subsurface damage are considered thin substrates. Deformation after release from machining can cause stress in the base, which can affect subsequent applications. Therefore, a method for detecting stress in thin substrates with large deformation is needed.

[0003] There are two methods for measuring stress: mechanical and physical. Common mechanical methods include grooving and drilling. However, these methods require partial separation or segmentation of the object being measured to release stress, which damages and destroys the sample, making them unsuitable for measuring stress on thin substrates. Physical methods primarily include radiographic, magnetic, and ultrasonic methods. While the radiographic method is theoretically sound, it carries risks of radiation damage and can only measure surface stress, significantly limiting its application. The magnetic method relies on the changing relationship between stress and the magnetization curve during the magnetic saturation process of a ferromagnetic substance and is only applicable within a certain range. Another stress measurement method is Raman spectroscopy, which uses the difference between the frequency of incident light and Raman scattered light to determine molecular structure, stress, and phase state. However, this method is subject to numerous limitations in practical applications, lacks accuracy, and only measures the stress state of the sample's outermost layer.

[0004] In their invention patent, "A Method for Determining Stress in Thin Substrates with Large Deformations," Liu Haijun et al. from China invented a method for determining residual stress on the surface of thin substrates with large deformations. This method uses a continuous regularization method to iteratively determine the stress on the thin substrate. However, this method is cumbersome and can only determine the stress in the thin film of the thin substrate; the stress state in the substrate base is unknown.

[0005] In engineering, thin substrates are a common structure used in aircraft, automobiles, ships, buildings and other fields. By obtaining the stress distribution of the thin substrate base, the strength and stability of these structures can be analyzed and evaluated to ensure their safety during use. At the same time, during the processing and forming of thin substrates, obtaining the stress distribution of the thin substrate base can evaluate the process effect, determine whether the process is reasonable, improve and optimize the process, and improve production efficiency and product quality. In summary, the role of obtaining the stress of the thin substrate base is very important and can provide important reference and guidance for aspects such as structural strength, stability and process effect. Therefore, a method for solving the base stress of thin substrates with large deformation is needed. Summary of the Invention

[0006] In order to solve the technical problem that in the prior art, only the stress of the thin film of a thin substrate can be obtained, while the stress state of the base of the thin substrate is unknown, the present invention provides a method for solving the stress of the base of a thin substrate, a stress solving device for the base of a thin substrate, and a computer terminal using the stress solving method.

[0007] The present invention is implemented by the following technical solution: a stress solving method for the base of a large deformation thin substrate, wherein the radial direction of the thin substrate before deformation is defined as the X axis, the circumferential direction is defined as the Y axis, and the direction perpendicular to the X axis and the Y axis is defined as the Z axis, and the center of the neutral plane of the thin substrate before deformation is defined as the coordinate origin; the thin substrate also includes a thin film laid on the base, and the stress solving method includes the radial stress σ of the base rr The calculation method of the radial stress σ rr The calculation method includes the following steps:

[0008] S1. Obtain the elastic modulus E, Poisson's ratio μ, thickness h, and diameter D of the thin substrate; also obtain the thickness t and film stress σ of the thin film; and also obtain the curvature coefficients a and b of the thin substrate after deformation;

[0009] S2. According to E, μ, h, D, t, σ, a and b, the radial stress σ is obtained by the designed radial stress calculation model. rr ; Wherein, the design method of the radial stress calculation model is:

[0010]

[0011] Wherein, z is the coordinate on the Z axis of the thin substrate.

[0012] As a further improvement of the above solution, the stress solving method further includes the circumferential stress σ of the substrate θθ The calculation method of the circumferential stress σ θθ The calculation method includes the following steps:

[0013] S3. According to E, μ, h, D, t, σ, a and b, the circumferential stress σ is obtained by the designed circumferential stress calculation model. θθ ; Wherein, the design method of the circumferential stress calculation model is:

[0014]

[0015] The present invention also provides a stress solving method for a substrate of a large deformation thin substrate, wherein the radial direction of the thin substrate before deformation is defined as the X axis, the circumferential direction is defined as the Y axis, and the direction perpendicular to the X axis and the Y axis is defined as the Z axis, and the center of the neutral plane of the thin substrate before deformation is defined as the coordinate origin; the thin substrate further includes a film laid on the substrate, and the stress solving method includes the circumferential stress σ of the substrate θθ The calculation method of the circumferential stress σ θθ The calculation method includes the following steps:

[0016] S1. Obtain the elastic modulus E, Poisson's ratio μ, thickness h, and diameter D of the thin substrate; also obtain the thickness t and film stress σ of the thin film; and also obtain the curvature coefficients a and b of the thin substrate after deformation;

[0017] S3. According to E, μ, h, D, t, σ, a and b, the circumferential stress σ is obtained by the designed circumferential stress calculation model. θθ ; Wherein, the design method of the circumferential stress calculation model is:

[0018]

[0019] Wherein, z is the coordinate on the Z axis of the thin substrate.

[0020] As a further improvement of the above solution, the method for obtaining the curvature coefficients a and b is:

[0021] According to the relationship between the bending curvature k and radius r of the thin substrate after deformation, k=ar 2 +b, design the film stress expression and equilibrium differential expression containing curvature coefficients a and b:

[0022]

[0023]

[0024] Wherein, E is the elastic modulus of the thin substrate; μ is the Poisson's ratio of the thin substrate; h is the thickness of the thin substrate; D is the diameter of the thin substrate; t is the thickness of the film; σ is the film stress of the film;

[0025] The curvature coefficients a and b are solved based on the film stress expression and the equilibrium differential expression.

[0026] Furthermore, when D=200 mm, h=400 μm, E=130 GPa, μ=0.28, t=1 μm, σt=800 MPa·μm; the curvature coefficients a=9.11913 and b=0.08826.

[0027] As a further improvement of the above solution, the thin substrate satisfies: h / D<0.2.

[0028] As a further improvement of the above solution, the deformation of the thin substrate is between 0.2Ac and 1Ac, where Ac is the deformation difference.

[0029] The present invention also includes a stress solver for a base of a thin substrate with large deformation, wherein the radial direction of the thin substrate before deformation is defined as the X-axis, the circumferential direction is defined as the Y-axis, and the direction perpendicular to the X-axis and Y-axis is defined as the Z-axis, and the center of the neutral plane of the thin substrate before deformation is defined as the coordinate origin; the thin substrate also includes a thin film laid on the base, and the stress solver includes:

[0030] a parameter acquisition module, which is used to obtain the elastic modulus E, Poisson's ratio μ, thickness h, and diameter D of the thin substrate; is also used to obtain the thickness t and film stress σ of the thin film; and is also used to obtain the curvature coefficients a and b of the thin substrate after deformation;

[0031] The radial stress calculation module is used to obtain the radial stress σ according to E, μ, h, D, t, σ, a and b through the designed radial stress calculation model. rr ; Wherein, the design method of the radial stress calculation model is:

[0032]

[0033] Wherein, z is the coordinate on the Z axis of the thin substrate;

[0034] And / or; circumferential stress calculation module, which is used to obtain the circumferential stress σ according to E, μ, h, D, t, σ, a and b through the designed circumferential stress calculation model θθ ; Wherein, the design method of the circumferential stress calculation model is:

[0035]

[0036] As a further improvement of the above solution, the method for obtaining the curvature coefficients a and b adopted by the parameter acquisition module is:

[0037] According to the relationship between the bending curvature k and radius r of the thin substrate after deformation, k=ar 2 +b, design the film stress expression and equilibrium differential expression containing curvature coefficients a and b:

[0038]

[0039]

[0040] Wherein, E is the elastic modulus of the thin substrate; μ is the Poisson's ratio of the thin substrate; h is the thickness of the thin substrate; D is the diameter of the thin substrate; t is the thickness of the film; σ is the film stress of the film;

[0041] The curvature coefficients a and b are solved based on the film stress expression and the equilibrium differential expression.

[0042] The present invention also provides a computer terminal comprising a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, the steps of the above-mentioned stress solving method for the base of any large deformation thin substrate are implemented.

[0043] The above method for determining the base stress of a thin substrate with large deformation utilizes the elastic mechanics process to first define the relationship between the curvature and radius of the thin substrate. Simultaneously, the curvature coefficient is solved to obtain the stress formula for the thin substrate's base. Substituting the solved curvature coefficient into the stress formula for the base, the base stress of the thin substrate with large deformation can be obtained. This method can non-destructively determine the stress in the base of a thin substrate, providing important reference and guidance for evaluating the structural strength, stability, and process performance of thin substrates.

[0044] Compared with the prior art, the present invention has the following beneficial effects:

[0045] This invention utilizes elastic mechanics and mechanical calculations to overcome the problem that traditional methods can only obtain film stress in thin substrates. Based on the known film stress, the stress state in the thin substrate base can be quickly and conveniently determined, regardless of the substrate's material size. This non-contact, non-destructive stress acquisition method can provide important reference and guidance for thin substrate structural strength, stability, and process performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0047] Figure 1 This is a flow chart of a method for solving the radial stress of a thin substrate with large deformation in an embodiment of the present invention.

[0048] Figure 2 This is a flow chart of a method for calculating the base circumferential stress of a thin substrate with large deformation according to an embodiment of the present invention.

[0049] Figure 3 It is a combination Figure 1 and Figure 2 Flowchart of the steps for solving the base stress of a thin substrate with large deformation.

[0050] Figure 4 yes Figure 3 The radial stress diagram obtained by finite element simulation in the embodiment of the present invention.

[0051] Figure 5 yes Figure 3 Graph of radial stress calculated in an embodiment of the present invention.

[0052] Figure 6 It is a combination Figure 4 and Figure 5 The radial stress calculated in the embodiment of the present invention and the radial stress error diagram of the simulation.

[0053] Figure 7 yes Figure 3 Circumferential stress diagram obtained by finite element simulation in an embodiment of the present invention.

[0054] Figure 8 yes Figure 3 Circumferential stress diagram calculated in an embodiment of the present invention.

[0055] Figure 9 It is a combination Figure 7 and Figure 8 Error diagram of the circumferential stress calculated and simulated in an embodiment of the present invention.

[0056] Figure 10 ] is a diagram of radial and circumferential stresses calculated using the classic Stoney formula in an embodiment of the present invention.

[0057] Figure 11 3 is a diagram showing the radial stress error between the radial stress calculated using the classic Stoney formula and the radial stress error obtained by simulation in an embodiment of the present invention.

[0058] Figure 12 3 is an error diagram between the circumferential stress calculated by the classic Stoney formula in the embodiment of the present invention and the circumferential stress obtained by simulation. DETAILED DESCRIPTION

[0059] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this invention pertains. The terms used herein in the specification of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0061] The thin substrate includes a base and a thin film laid on the base. The thin substrate in this embodiment satisfies h / D<0.2, where h is the thickness of the thin substrate, which refers to the overall thickness of the thin substrate, and therefore includes the thickness of the base and the film. D is the diameter of the thin substrate, which is also the diameter of the base and the film. As long as the ratio of thickness to diameter is less than 0.2, it can be called a thin substrate. After the thin substrate is deformed, stress exists not only in the film but also in the base. This embodiment solves the stress of the base after a large deformation of the thin substrate. Large deformation refers to the deformation of the thin substrate between 0.2Ac and 1Ac, where Ac is the deformation difference. Of course, the stress solving method of the present invention can also be applied to those that are not within this thickness or outside this deformation amount, but there may be a large error. It is best to use the stress solving method of the present invention to solve the radial stress σ of the base for a large deformation thin substrate with h / D<0.2 and deformation between 0.2Ac and 1Ac. rr and circumferential stress σ θθ .

[0062] The radial direction of the thin substrate before deformation is defined as the X axis, the circumferential direction as the Y axis, and the direction perpendicular to the X axis and the Y axis as the Z axis. The center of the neutral plane of the thin substrate before deformation is the coordinate origin, thereby forming a coordinate system. All subsequent coordinates are in this coordinate system. The stress solution method of the present invention includes the radial stress σ of the substrate rr Calculation method of circumferential stress σ θθ Calculation method.

[0063] See also Figure 1 , the radial stress σ rr The calculation method includes the following steps:

[0064] S1. Obtain the elastic modulus E, Poisson's ratio μ, thickness h, and diameter D of the thin substrate; also obtain the thickness t and film stress σ of the thin film; and also obtain the curvature coefficients a and b of the thin substrate after deformation;

[0065] S2. According to E, μ, h, D, t, σ, a and b, the radial stress σ is obtained by the designed radial stress calculation model. rr ; Wherein, the design method of the radial stress calculation model is:

[0066]

[0067] Wherein, z is the coordinate on the Z axis of the thin substrate.

[0068] See also Figure 2 , the circumferential stress σ θθ The calculation method includes the following steps:

[0069] S1. Obtain the elastic modulus E, Poisson's ratio μ, thickness h, and diameter D of the thin substrate; also obtain the thickness t and film stress σ of the thin film; and also obtain the curvature coefficients a and b of the thin substrate after deformation;

[0070] S3. According to E, μ, h, D, t, σ, a and b, the circumferential stress σ is obtained by the designed circumferential stress calculation model. θθ ; Wherein, the design method of the circumferential stress calculation model is:

[0071]

[0072] Among them, the method for obtaining the curvature coefficients a and b is:

[0073] According to the relationship between the bending curvature k and radius r of the thin substrate after deformation, k=ar 2 +b, design the film stress expression and equilibrium differential expression containing curvature coefficients a and b:

[0074]

[0075]

[0076] Wherein, E is the elastic modulus of the thin substrate; μ is the Poisson's ratio of the thin substrate; h is the thickness of the thin substrate; D is the diameter of the thin substrate; t is the thickness of the film; σ is the film stress of the film;

[0077] The curvature coefficients a and b are solved based on the film stress expression and the equilibrium differential expression.

[0078] Among them, the relationship k = ar 2 +b is the big premise, and all formulas are created based on it, including the creation of radial and circumferential stress formulas (that is, the design of radial stress calculation model and circumferential stress calculation model).

[0079] Please combine Figure 3 The technical solution of the present invention can be summarized as follows: the material characteristic parameters, dimensions and film stress of the thin substrate are known; the relationship between the curvature and radius of the thin substrate is defined; the curvature coefficient is solved by the simultaneous equations; the radial stress σ is obtained by solving the equations. rr and circumferential stress σ θθ ; Finally, substitute the curvature coefficient into the stress formula σ in the baserr and σ θθ , and obtain the stress state in the substrate.

[0080] Next, we will provide an example to illustrate this in detail. Consider the following material properties, dimensions, and film stress of a thin substrate: diameter D = 200 mm, thickness h = 400 μm, elastic modulus E = 130 GPa, Poisson's ratio μ = 0.28, film thickness t = 1 μm, and film stress σt = 800 MPa·μm.

[0081] The curvature coefficients a and b come from the relationship between the bending curvature k and the radius r of the thin substrate after deformation: k = ar 2 However, different curvature coefficients a and b can have a significant impact: the accuracy of the curvature coefficients a and b affects the accuracy of the stress on the substrate. Therefore, it is necessary to design the curvature coefficients a and b. In the present invention, the curvature coefficients a and b are solved by designing a film stress expression and a balanced differential expression containing the curvature coefficients a and b.

[0082] In this embodiment, the present invention designs a new film stress expression and equilibrium differential expression:

[0083]

[0084]

[0085] The curvature coefficients a and b are known parameters, so the radial and circumferential stresses can be calculated using the radial and circumferential stress calculation models.

[0086] Down Figure 4-12 They are respectively the stress distribution diagram in the substrate obtained by finite element simulation and the stress distribution diagram in the substrate obtained by calculation, and their error diagrams. Figure 4 is a radial stress diagram obtained by finite element simulation in an embodiment of the present invention; Figure 5 is a radial stress diagram calculated in an embodiment of the present invention; Figure 6 is a diagram showing the radial stress error between the calculated radial stress and the simulated radial stress in an embodiment of the present invention; Figure 7 is a circumferential stress diagram obtained by finite element simulation in an embodiment of the present invention; Figure 8 is a circumferential stress diagram calculated in an embodiment of the present invention; Figure 9 is a diagram showing the error between the calculated circumferential stress and the simulated circumferential stress in an embodiment of the present invention;

[0087] Figure 10 is a diagram of radial and circumferential stresses calculated using the classic Stoney formula in an embodiment of the present invention; Figure 11is a diagram showing the radial stress error between the radial stress calculated using the classic Stoney formula and the radial stress error obtained by simulation in an embodiment of the present invention; Figure 12 3 is an error diagram between the circumferential stress calculated by the classic Stoney formula in the embodiment of the present invention and the circumferential stress obtained by simulation.

[0088] From the comparison of the stress distribution diagrams, it can be clearly seen that the radial and circumferential stresses obtained by the stress calculation formula in the substrate sought by the present invention change with the change of the thin substrate radius r, while the radial and circumferential stresses obtained by the classic Stoney formula are constant in each layer. At the same time, from the comparison of the error diagrams, it can be seen that the error of the calculation result of the formula sought by the present invention is smaller.

[0089] The error between the radial stress value obtained by the formula of the present invention and the simulation result is as follows: Figure 6 As shown, its range is 0.1307~0.8410MPa. The error between the radial stress value obtained by the classic Stoney formula and the simulation result is as follows Figure 11 As shown in Figure 2, the range is -0.8626 to 2.5340 MPa. The error between the circumferential stress value obtained by the formula of the present invention and the simulation result is as follows: Figure 9 As shown, its range is 0.1286~0.9254MPa. The error between the circumferential stress value obtained by the classic Stoney formula and the simulation result is as follows Figure 12 As shown in FIG. 1 , the range is -0.8615 to 3.1187 MPa. Using the stress calculation formula of the present invention in a thin substrate with large deformation, a more accurate stress distribution state that conforms to the actual situation can be obtained.

[0090] This embodiment utilizes elastic mechanics and mechanical calculations to overcome the problem that traditional methods can only obtain film stress in thin substrates. Based on the known film stress, the stress state in the thin substrate base can be quickly and conveniently determined, regardless of the substrate's material size. This non-contact, non-destructive stress acquisition method can provide important reference and guidance for thin substrate structural strength, stability, and process performance.

[0091] The stress solution method for the base of a large deformation thin substrate of the present invention can be implemented in the form of embedded software and embedded as a functional module in an existing thin substrate application system, or it can be implemented in the form of non-embedded software and made into a separate software for promotion in the form of an APP.

[0092] Regardless of the software format, it can be used as a stress solver for a thin substrate with large deformation. The stress solver includes a parameter acquisition module, a radial stress calculation module, a circumferential stress calculation module, and may also include a curvature coefficient calculation module.

[0093] The parameter acquisition module is used to obtain the elastic modulus E, Poisson's ratio μ, thickness h, and diameter D of the thin substrate; it is also used to obtain the thickness t and film stress σ of the film; and it is also used to obtain the curvature coefficients a and b of the thin substrate after deformation.

[0094] The radial stress calculation module is used to obtain the radial stress σ according to E, μ, h, D, t, σ, a and b through the designed radial stress calculation model. rr ; Wherein, the design method of the radial stress calculation model is:

[0095]

[0096] Wherein, z is the coordinate on the Z axis of the thin substrate.

[0097] The circumferential stress calculation module is used to obtain the circumferential stress σ according to E, μ, h, D, t, σ, a and b through the designed circumferential stress calculation model. θθ ; Wherein, the design method of the circumferential stress calculation model is:

[0098]

[0099] The curvature coefficient calculation module is used to design the film stress expression and equilibrium differential expression containing the curvature coefficients a and b:

[0100]

[0101]

[0102] The curvature coefficient calculation module is further used to solve the curvature coefficients a and b according to the film stress expression and the equilibrium differential expression simultaneous equations.

[0103] Regardless of the software form, it can be executed by a computer terminal. The computer terminal includes a memory, a processor, and a computer program stored in the memory and executable on the processor. The computer terminal can be a smartphone, tablet computer, laptop computer, etc. that can execute programs. In some embodiments, the processor can be a central processing unit (CPU), a controller, a microcontroller, a microprocessor, or other data processing chip. The processor is generally used to control the overall operation of the computer device. In this embodiment, the processor is used to run the program code stored in the memory or process data. When the processor executes the program, the steps of the stress solution method for the substrate of a large deformation thin substrate can be implemented.

[0104] Regardless of the software form, it can be stored on a computer-readable storage medium for sales promotion. The computer-readable storage medium stores a computer program, which, when executed by a processor, can implement the steps of the stress solution method for the base of a large deformation thin substrate.

[0105] The computer-readable storage medium may include flash memory, a hard disk, a multimedia card, a card-type memory (e.g., SD or DX memory), random access memory (RAM), static random access memory (SRAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), programmable read-only memory (PROM), magnetic memory, a magnetic disk, an optical disk, etc. In some embodiments, the storage medium may be an internal storage unit of a computer device, such as a hard disk or memory of the computer device. In other embodiments, the storage medium may also be an external storage device of the computer device, such as a plug-in hard disk equipped on the computer device, a smart memory card (SMC), a secure digital (SD) card, a flash memory card, etc. Of course, the storage medium may also include both an internal storage unit of the computer device and its external storage device. In this embodiment, the memory is generally used to store the operating system and various application software installed on the computer device. In addition, the memory may also be used to temporarily store various types of data that have been output or are about to be output.

[0106] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A stress solving method for a thin substrate with large deformation, wherein the radial direction of the thin substrate before deformation is defined as X Axial and circumferential directions Y Axis, perpendicular to X Axis and Y The axis is Z axis, the center of the neutral plane of the thin substrate before deformation is the coordinate origin; the thin substrate also includes a film laid on the base, characterized in that, The stress solving method includes the radial stress of the substrate σ rr The calculation method of the radial stress σ rr The calculation method includes the following steps: S1. Obtaining the elastic modulus of the thin substrate E , Poisson's ratio μ ,thickness h、 diameter D ; Also obtain the thickness of the film t , film stress σ ; Also obtain the curvature coefficient of the thin substrate after deformation a and b ; S2. According to E 、 μ 、 h、D 、 t 、 σ、a and b , the radial stress is obtained by the designed radial stress calculation model σ rr ; Wherein, the design method of the radial stress calculation model is: Where, z For the thin substrate Z Coordinates on the axis.

2. The stress solving method for a base of a thin substrate with large deformation according to claim 1, wherein: The stress solving method also includes the circumferential stress of the substrate σ θθ The calculation method of the circumferential stress σ θθ The calculation method includes the following steps: S3. According to E 、 μ 、 h、D 、 t 、 σ、a and b , the circumferential stress is obtained by the designed circumferential stress calculation model σ θθ ; Wherein, the design method of the circumferential stress calculation model is: 。 3. The stress solving method for a base of a large deformation thin substrate according to claim 1, wherein: Curvature coefficient a and b The method to obtain is: According to the curvature of the thin substrate after deformation k With radius r The relationship k=ar 2 + b , the design contains the curvature coefficient a and b The film stress expression and equilibrium differential expression of: Where, E is the elastic modulus of the thin substrate; μ is the Poisson's ratio of the thin substrate; h is the thickness of the thin substrate; D is the diameter of the thin substrate; t is the thickness of the film; σ is the film stress of the film; The curvature coefficient is solved by the simultaneous equations of the film stress expression and the equilibrium differential expression. a and b .

4. The stress solving method for a base of a thin substrate with large deformation according to claim 3, wherein: when D =200mm, h =400μm, E =130 Gpa, μ =0.28, t =1μm, σt= 800 MPa· μm; curvature coefficient a =9.11913 and b =0.08826.

5. The stress solving method for a base of a thin substrate with large deformation according to claim 1, wherein: The thin substrate satisfies: h / D <0.

2.

6. The stress solving method for a base of a large deformation thin substrate according to claim 1, wherein: The thin substrate is 0.2 Ac to 1 Ac The deformation between Ac is the deformation difference.

7. A stress solving method for a thin substrate with large deformation, wherein the radial direction of the thin substrate before deformation is defined as X Axial and circumferential directions Y Axis, perpendicular to X Axis and Y The axis is Z axis, the center of the neutral plane of the thin substrate before deformation is the coordinate origin; the thin substrate also includes a film laid on the base, characterized in that, The stress solving method includes the circumferential stress of the substrate σ θθ The calculation method of the circumferential stress σ θθ The calculation method includes the following steps: S1. Obtaining the elastic modulus of the thin substrate E , Poisson's ratio μ ,thickness h、 diameter D ; Also obtain the thickness of the film t , film stress σ ; Also obtain the curvature coefficient of the thin substrate after deformation a and b ; S3. According to E 、 μ 、 h、D 、 t 、 σ、a and b , the circumferential stress is obtained by the designed circumferential stress calculation model σ θθ ; Wherein, the design method of the circumferential stress calculation model is: Where, z For the thin substrate Z Coordinates on the axis.

8. The stress solving method for a base of a thin substrate with large deformation according to claim 7, wherein: Curvature coefficient a and b The method to obtain is: According to the curvature of the thin substrate after deformation k With radius r The relationship k=ar 2 + b , the design contains the curvature coefficient a and b The film stress expression and equilibrium differential expression of: Where, E is the elastic modulus of the thin substrate; μ is the Poisson's ratio of the thin substrate; h is the thickness of the thin substrate; D is the diameter of the thin substrate; t is the thickness of the film; σ is the film stress of the film; The curvature coefficient is solved by the simultaneous equations of the film stress expression and the equilibrium differential expression. a and b .

9. The stress solving method for a base of a thin substrate with large deformation according to claim 8, wherein: when D =200mm, h =400μm, E =130 Gpa, μ =0.28, t =1μm, σt= 800 MPa· μm; curvature coefficient a =9.11913 and b =0.08826.

10. The stress solving method for a base of a thin substrate with large deformation according to claim 7, wherein: The thin substrate satisfies: h / D <0.

2.

11. The stress solving method for a base of a thin substrate with large deformation according to claim 7, wherein: The thin substrate is 0.2 Ac to 1 Ac The deformation between Ac is the deformation difference.

12. A stress solving device for a base of a thin substrate with large deformation, wherein the radial direction of the thin substrate before deformation is defined as X Axial and circumferential directions Y Axis, perpendicular to X Axis and Y The axis is Z Axis, the center of the neutral plane of the thin substrate before deformation is the coordinate origin; The thin substrate also includes a film laid on the base, characterized in that: The stress solving device comprises: A parameter acquisition module, which is used to obtain the elastic modulus of the thin substrate E , Poisson's ratio μ ,thickness h、 diameter D ; Also used to obtain the thickness of the film t , film stress σ ; Also used to obtain the curvature coefficient of the thin substrate after deformation a and b ; Radial stress calculation module, which is used to calculate the E 、 μ 、 h、D 、 t 、 σ、a and b , the radial stress is obtained by the designed radial stress calculation model σ rr ; Wherein, the design method of the radial stress calculation model is: Where, z For the thin substrate Z Coordinates on the axis; and / or; circumferential stress calculation module, which is used to calculate the circumferential stress according to E 、 μ 、 h、D 、 t 、 σ、a and b , the circumferential stress is obtained by the designed circumferential stress calculation model σ θθ ; Wherein, the design method of the circumferential stress calculation model is: 。 13. The stress solving device for a base of a thin substrate with large deformation according to claim 12, characterized in that: The curvature coefficient used by the parameter acquisition module a and b The method to obtain is: According to the curvature of the thin substrate after deformation k With radius r The relationship k=ar 2 + b , the design contains the curvature coefficient a and b The film stress expression and equilibrium differential expression of: Where, E is the elastic modulus of the thin substrate; μ is the Poisson's ratio of the thin substrate; h is the thickness of the thin substrate; D is the diameter of the thin substrate; t is the thickness of the film; σ is the film stress of the film; The curvature coefficient is solved by the simultaneous equations of the film stress expression and the equilibrium differential expression. a and b .

14. A computer terminal comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the steps of the stress solving method for the base of a thin substrate with large deformation as claimed in any one of claims 1 to 11 are implemented.

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