Control device and storage medium

Abstract

The present application provides a control device and a storage medium. A technology capable of suppressing variation in the cut width of beveling processing at the peripheral portion of a substrate is provided. A substrate processing device imparts a processing liquid to the peripheral portion of a rotating substrate. The substrate processing device includes a rotation holding portion, a processing liquid ejection portion, a variation amplitude acquisition portion, and an ejection control portion. The rotation holding portion holds and rotates the substrate. The processing liquid ejection portion ejects the processing liquid toward the peripheral portion of the substrate held by the rotation holding portion. The variation amplitude acquisition portion acquires information related to the variation amplitude of the deformation amount of the peripheral portion of the substrate. The ejection control portion controls the ejection angle and the ejection position of the processing liquid from the processing liquid ejection portion with respect to the peripheral portion in accordance with the information related to the variation amplitude of the deformation amount of the peripheral portion acquired by the variation amplitude acquisition portion.

Description

[0001] This application is a divisional application of the patent application No. 201710790286.1 with title "Substrate processing device and substrate processing method" filed on September 5, 2017. TECHNICAL FIELD

[0002] The present application relates to a substrate processing device and a substrate processing method that impart a processing liquid to a peripheral portion of a substrate. BACKGROUND

[0003] In a manufacturing device of a semiconductor device, a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") is rotated around a vertical axis while being held horizontally, and a processing liquid such as a chemical solution is imparted to a peripheral portion of the substrate, whereby a resist film, a contaminant, and an oxide film, etc. that exist in the peripheral portion are removed. This removal processing is also called bevel cut processing, and it is desirable that the removal processing be performed with a desired cut width accuracy on the entire periphery of the substrate.

[0004] In a liquid processing device disclosed in, for example, Patent Literature 1, the peripheral portion of a substrate is photographed, and a removal width of a film of the peripheral portion is calculated based on the result of the photographing, and a determination is made as to whether the removal width is appropriate. In this liquid processing device, an amount of deviation between the rotation center of the substrate holding portion and the center of the substrate is also calculated, and the substrate is held by the substrate holding portion in a state where the rotation center around the vertical axis and the center of the substrate coincide.

[0005] On the other hand, the processing surface of a substrate generally has a flat shape, but in reality, it has a slight undulation due to environmental primary causes, etc., and sometimes varies in the thickness direction in units of, for example, one-tenth of a millimeter. In particular, the peripheral portion of the substrate is strongly affected by warping of the substrate, and the surface position in the thickness direction is easily fluctuated.

[0006] In a case where a processing liquid is sprayed in a direction inclined with respect to a substrate, the arrival position of the processing liquid on the substrate varies depending on the surface position in the thickness direction of the substrate. Thus, in a case where a processing liquid is sprayed to the peripheral portion of a substrate whose surface position is not constant along the inclined direction, the arrival position of the processing liquid at the peripheral portion fluctuates, and the cut width in bevel cut processing is also not constant.

[0007] Therefore, it is desirable to propose a new bevel cut processing that can suppress fluctuation of the arrival position of a processing liquid and uniformize the cut width even in a case where the surface position of the peripheral portion of a substrate is not constant.

[0008] Prior art documents

[0009] Patent documents

[0010] Patent Literature 1: Japanese Patent Application Laid-Open No. 2013-168429 SUMMARY

[0011] Problem to be solved by the invention

[0012] The present application provides a dicing width variation of beveling processing at a peripheral portion of a substrate.

[0013] Solution to solve the problem

[0014] One aspect of the present application relates to a substrate processing apparatus that imparts a processing liquid to a peripheral portion of a rotating substrate, the substrate processing apparatus including: a rotation holding portion that holds a substrate and rotates the substrate; a processing liquid ejecting portion that ejects a processing liquid toward a peripheral portion of a substrate held by the rotation holding portion; a variation range acquisition portion that acquires information about a variation range of a deformation amount of the peripheral portion; and an ejection control portion that controls an ejection angle and an ejection position of the processing liquid from the processing liquid ejecting portion with respect to the peripheral portion in accordance with the information about the variation range of the deformation amount of the peripheral portion acquired by the variation range acquisition portion.

[0015] Another aspect of the present application relates to a substrate processing method that ejects a processing liquid from a processing liquid ejecting portion toward a peripheral portion of a rotating substrate, the substrate processing method including: a process of acquiring information about a variation range of a deformation amount of the peripheral portion; and a process of controlling an ejection angle and an ejection position of the processing liquid from the processing liquid ejecting portion with respect to the peripheral portion in accordance with the information about the variation range of the deformation amount of the peripheral portion.

[0016] Effects of the invention

[0017] According to the present application, a dicing width variation of beveling processing at a peripheral portion of a substrate can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a longitudinal sectional view showing one example of a substrate processing apparatus.

[0019] Figure 2 is an enlarged sectional view showing a nozzle driving portion and a cover member, (a) shows a dummy dispensing configuration for ejecting a processing liquid outside a wafer, (b) shows a chemical solution processing configuration for ejecting a processing liquid toward a peripheral portion of a wafer, and (c) shows a rinsing processing configuration for ejecting a rinsing liquid toward a peripheral portion of a wafer.

[0020] Figure 3 is a diagram for explaining a wafer angle and a dicing width, (a) shows a plan view of a wafer, and (b) shows a sectional view of a wafer.

[0021] Figure 4is a graph showing an example of a relationship between a wafer angle (horizontal axis) and a cut width (vertical axis).

[0022] Figure 5 is a graph showing an example of a configuration of a wafer and a distance detection sensor.

[0023] Figure 6 is a graph showing an example of a relationship between a wafer angle (horizontal axis) and an upper surface detection height H (vertical axis).

[0024] Figure 7 is a sectional view for explaining the spray angle control of the processing liquid from the chemical solution nozzle for the first control method, and schematically shows the chemical solution nozzle and the wafer.

[0025] Figure 8 is a graph showing an example of a relationship between a wafer warpage amount (horizontal axis) and a cut range (vertical axis) with respect to the spray angle of the processing liquid (i.e., the first angle) for the first control method.

[0026] Figure 9 is a graph showing an example of a relationship between the first angle (horizontal axis) and the cut range (vertical axis) with respect to the wafer warpage amount for the first control method.

[0027] Figure 10 is an enlarged plan view for explaining the spray angle control of the processing liquid from the chemical solution nozzle for the second control method, and schematically shows the chemical solution nozzle and the wafer.

[0028] Figure 11 is a graph showing an example of a relationship between a wafer warpage amount (horizontal axis) and a cut range (vertical axis) with respect to the spray angle of the processing liquid (i.e., the second angle) for the second control method.

[0029] Figure 12 is a graph showing an example of a relationship between the second angle (horizontal axis) and the cut range (vertical axis) with respect to the wafer warpage amount for the second control method.

[0030] Figure 13 is a schematic graph for explaining the amount of deviation C of the arrival position of the processing liquid from the chemical solution nozzle.

[0031] Reference signs

[0032] 1, substrate processing apparatus; 7, control section; 21, substrate holding section; 73, chemical solution nozzle; W, substrate. DETAILED DESCRIPTION

[0033] An embodiment of the present application will be described below with reference to the accompanying drawings. Note that the drawings attached to this specification include portions that are shown in a reduced scale and in a changed aspect ratio with respect to the real object for the sake of convenience in illustration and ease of understanding.

[0034] [Overall structure of the substrate processing device]

[0035] Figure 1 This is a longitudinal sectional view showing an example of the substrate processing apparatus 1.

[0036] The substrate processing apparatus 1 of this embodiment is an apparatus for liquid processing of a wafer W, which is a disk-shaped substrate. In particular, it performs a beveling process on the wafer W by applying a processing liquid to the peripheral portion of a rotating wafer W. A film such as SiN (i.e., a nitride film) is formed on the wafer W, which is formed from the upper surface of the wafer W, across the side end of the wafer W, and across the peripheral portion of the lower surface side of the wafer W. The beveling process of this embodiment is a process of removing the film from the peripheral portion of the wafer W, using a processing liquid such as a chemical solution capable of removing the film. There are no particular limitations on the processing liquid that can be used for this beveling process. Alkaline chemical solutions such as a mixture of ammonia, hydrogen peroxide, and pure water (i.e., SC-1 solution) and acidic chemical solutions such as a mixture of hydrogen fluoride and pure water (i.e., HF (Hydrofluoric acid) solution) can be used as processing liquids.

[0037] Furthermore, the upper and lower surfaces of wafer W are the upper and lower surfaces, respectively, when wafer W is held horizontally. Additionally, the periphery of wafer W is the outer peripheral end region of wafer W and is typically an area where no semiconductor device pattern (i.e., device portion) is formed.

[0038] The substrate processing apparatus 1 includes a nozzle drive unit 70, which includes a chemical solution nozzle 73 and a rinsing nozzle 76. A first chemical solution supply unit 75 is connected to the chemical solution nozzle 73 via a supply pipe 75a, and a first rinsing liquid supply unit 78 is connected to the rinsing nozzle 76 via a supply pipe 78a. The chemical solution nozzle 73 functions as a processing liquid ejection unit that ejects processing liquid toward the periphery of the wafer W held by the substrate holding unit 21. The rinsing nozzle 76 functions as a rinsing liquid ejection unit that ejects rinsing liquid toward the periphery of the wafer W held by the substrate holding unit 21. When the ejection angle of the processing liquid relative to the periphery of the wafer W is nearly perpendicular (i.e., 90°) to the processing surface of the periphery, there is a concern that the processing liquid reaching the periphery may splash back toward the rotation center side of the substrate, or that the processing liquid may adhere to unexpected locations and contaminate the substrate. Therefore, by spraying the processing liquid in a manner that is directed toward the outer periphery of the wafer W and inclined relative to the wafer W, it is possible to prevent the processing liquid from splashing back toward the rotation center side of the wafer W.

[0039] In addition, the substrate processing apparatus 1 includes: a substrate holding part 21 that holds the wafer W horizontally; a rotation drive part 24 that rotates the substrate holding part 21; a cup body 3 that is provided to cover the wafer W from the side; and a cover member 5 that is provided to face the upper surface of the wafer W with a space between them.

[0040] The substrate holding portion 21 functions as a rotation holding portion that rotates the wafer W by being driven to rotate by the rotation drive shaft 22 while holding the wafer W. In this embodiment, the substrate holding portion 21 is configured to hold the wafer W horizontally without contacting the peripheral portion so as not to hinder the beveling process, and is configured as, for example, a vacuum chuck that holds the central portion of the lower surface of the wafer W. The rotation drive portion 24 includes a rotation drive shaft 22 that supports the substrate holding portion 21 and a motor 23 that rotates the rotation drive shaft 22. By rotating the rotation drive shaft 22 using the motor 23, the wafer W held by the substrate holding portion 21 can be rotated about the vertical axis.

[0041] The cup body 3 is an annular component that surrounds the substrate holding portion 21 and the side end of the wafer W from the side, and has an opening 46 for inserting the wafer W. A circumferentially extending groove 33 is formed inside the cup body 3, opening at the top. The groove 33 includes an annular venting space 34 and an annular liquid receiving space 35, which are separated from each other by a wall 36. The venting space 34 forms a flow path for discharging gases generated during liquid processing and gases introduced into the periphery of the wafer W to the outside. The liquid receiving space 35 forms a flow path for receiving and discharging liquids such as processing liquids and rinsing liquids dispersed from the wafer W during liquid processing. The wall 36 is configured such that liquid components dispersed in the gas flow are separated from the gas flow in the liquid receiving space 35.

[0042] In addition, a lifting mechanism 47 for raising and lowering the cup body 3 is installed on the cup body 3.

[0043] Figure 1 The cover member 5 shown has an annular shape and a cover opening 55 in the center. When the cover member 5 is positioned above the wafer W, essentially only the periphery of the wafer W and its surrounding area are covered by the cover member 5. A lifting mechanism 48 is installed on the cover member 5 to raise and lower it.

[0044] Gas ejected from a gas supply port (not shown) located above the cover member 5 flows outward from the center of the wafer W in the space between the cover member 5 and the wafer W. This prevents the processing liquid ejected from the chemical solution nozzle 73 from entering the center of the wafer W, thus preventing the processing liquid from adhering to unexpected parts of the wafer W and contaminating the wafer W. The gas ejected from the gas supply port (not shown) is preferably, for example, an inactive gas such as nitrogen, or dry air.

[0045] Figure 2 The above are enlarged cross-sectional views of the nozzle drive unit 70 and the cover member 5. (a) shows a virtual dispensing configuration for spraying processing liquid out of the wafer W, (b) shows a chemical solution processing configuration for spraying processing liquid toward the periphery of the wafer W, and (c) shows a rinsing processing configuration for spraying rinsing liquid toward the periphery of the wafer W.

[0046] The nozzle drive unit 70 mounted on the cover member 5 includes: a nozzle head 72 supporting a chemical solution nozzle 73 and a rinsing nozzle 76; and a head support shaft 71 supporting the nozzle head 72 and configured to extend and retract axially. The head support shaft 71 is arranged such that its axial direction is substantially parallel to the radial direction of the wafer W. By adjusting the amount of extension and retraction of the head support shaft 71, the radial positions of the chemical solution nozzle 73 and the rinsing nozzle 76 on the wafer W can be changed, allowing the chemical solution nozzle 73 and the rinsing nozzle 76 to be positioned at a desired radial position.

[0047] In the case of performing, for example, a virtual distribution to stabilize the flow 74b of the treatment liquid ejected from the chemical solution nozzle 73, the chemical solution nozzle 73, as Figure 2 As shown in (a), the processing liquid is ejected from the chemical solution nozzle 73 toward the cup 3 outside the wafer W. Furthermore, when the processing liquid is ejected from the chemical solution nozzle 73 toward the periphery of the wafer W, the chemical solution nozzle 73 is configured as follows: Figure 2 As shown in (b), the processing fluid 74 is applied to the periphery of the wafer W. Furthermore, when the rinsing fluid is ejected from the rinsing nozzle 76 toward the periphery of the wafer W, the rinsing nozzle 76 is configured as follows: Figure 2 As shown in (c), the rinsing fluid flow 77b from the rinsing nozzle 76 is directed toward the periphery of the wafer W, and the rinsing fluid 77 is supplied to the periphery of the wafer W. Furthermore, the configuration of the chemical solution nozzle 73 and the rinsing nozzle 76 is not limited to... Figure 2 The configurations shown in (a) to (c) allow the chemical solution nozzle 73 and the rinsing nozzle 76 to be positioned optimally as needed. For example, when neither the chemical solution nozzle 73 nor the rinsing nozzle 76 ejects processing liquid, the chemical solution nozzle 73 and the rinsing nozzle 76 are positioned above the liquid receiving portion 51 provided on the cover member 5. Therefore, even if droplets of processing liquid and rinsing liquid fall from the chemical solution nozzle 73 and the rinsing nozzle 76, these droplets fall onto the liquid receiving portion 51, thus preventing the wafer W from being contaminated by droplets of processing liquid and rinsing liquid.

[0048] Furthermore, the nozzle drive unit 70 in this embodiment also functions as an ejection drive unit that changes the ejection angle and ejection position of the processing liquid relative to the periphery of the wafer W. Specifically, the nozzle drive unit 70 is located in the control unit 7 ( Figure 1Under the control of (refer to), the head support shaft 71 is rotated around an axis extending along its extension direction (refer to). Figure 2 Rotating the arrow "V" in (b) changes the ejection angle of the processing liquid from the chemical solution nozzle 73 and the ejection angle of the rinsing liquid from the rinsing nozzle 76. Furthermore, the nozzle drive unit 70, under the control of the control unit 7, extends and retracts the head support shaft 71, thereby changing the ejection position of the processing liquid from the chemical solution nozzle 73 and the ejection position of the rinsing liquid from the rinsing nozzle 76. Here, the ejection position refers to the position on the upper surface of the wafer W where the processing liquid and the rinsing liquid arrive.

[0049] Furthermore, the aforementioned ejection drive unit can also be implemented by a device other than the nozzle drive unit 70. For example, without illustration, a motor that changes the orientation of the chemical solution nozzle 73 to any direction can be installed on the chemical solution nozzle 73 and driven under the control of the control unit 7, thereby changing the ejection angle and ejection position of the treatment liquid from the chemical solution nozzle 73. In this case, it is not necessary to rotate the head support shaft 71 around the axis (see reference). Figure 2 The arrow "V" in (b) rotates. The motor described above can be installed independently for the chemical solution nozzle 73 and the rinsing nozzle 76, or a single motor can be used to change the orientation of both the chemical solution nozzle 73 and the rinsing nozzle 76. In addition, the installation position of the motor is not particularly limited, and for example, a motor capable of adjusting the orientation of the chemical solution nozzle 73 can be installed inside the nozzle head 72.

[0050] Figure 1 and Figure 2 The substrate processing apparatus 1 shown can also spray processing liquid and rinsing liquid from below onto the periphery of the wafer W, performing beveling processing on the periphery of the lower surface of the wafer W. Specifically, a chemical solution spray outlet 90 and a rinsing liquid spray outlet 93 are also formed on the inner periphery of the cup body 3. For example... Figure 1 As shown, a second chemical solution supply unit 92 is connected to the chemical solution outlet 90 via a supply pipe 92a, and a second rinsing liquid supply unit 94 is connected to the rinsing liquid outlet 93 via a supply pipe 94a.

[0051] Furthermore, a cleaning fluid outlet 40 and a gas supply port (not shown) are also formed on the inner periphery of the cup body 3. An annular buffer 40a for storing the cleaning fluid is connected to the cleaning fluid outlet 40, and the cleaning fluid sprayed from the cleaning fluid outlet 40 can be used to clean the wafer W (especially the lower surface). Inactive gases such as nitrogen and dry air are supplied to the gas supply port formed on the inner periphery, and the gas blown from the gas supply port to the lower surface of the wafer W can be used to prevent chemical solutions and rinsing fluids from entering the center side of the wafer W.

[0052] Furthermore, the substrate processing apparatus 1 has a control unit 7 that comprehensively controls the operation of the entire apparatus. The control unit 7 controls the operation of all functional components of the substrate processing apparatus 1 (e.g., motor 23, lifting mechanisms 47, 48, cleaning fluid supply unit, gas supply unit, nozzle drive unit 70, chemical solution supply units 75, 92, and rinsing fluid supply units 78, 94, etc.).

[0053] Furthermore, the control unit 7 also functions as a variation amplitude acquisition unit, acquiring information related to the variation amplitude of the deformation amount in the thickness direction (i.e., the vertical direction) of the peripheral portion of the wafer W. Specifically, in this embodiment, the information related to the variation amplitude of the deformation amount in the thickness direction of the peripheral portion of the wafer W is obtained by a sensor (see below) that measures the deformation amount of the peripheral portion of the wafer W in the thickness direction. Figure 5 The measurement (reference numeral "11") is sent from the sensor to the control unit 7. In addition, the control unit 7 also functions as an ejection control unit that controls the ejection angle and ejection position of the processing liquid from the chemical solution nozzle 73 relative to the periphery of the wafer W by means of a nozzle drive unit such as the head support shaft 71, based on information related to the variation range of the deformation of the periphery of the wafer W.

[0054] Furthermore, the control unit 7 also functions as an interval control unit to adjust the interval between the proximity arrangement member disposed above and below the wafer W and the wafer W. By controlling the lifting mechanism 48, for example, the control unit 7 can adjust the interval between the cover member 5, liquid receiving part 51, chemical solution nozzle 73, rinsing nozzle 76, and other proximity arrangement members that move together with the cover member 5 disposed above the wafer W and the wafer W (particularly the upper surface). Additionally, by controlling the lifting mechanism 47, the control unit 7 can adjust the interval between the cup body 3 disposed below the wafer W, and other proximity arrangement members that move together with the cup body 3, and the wafer W (particularly the lower surface). The control unit 7 can acquire information related to the variation in the amount of deformation (particularly the amount of deformation in the thickness direction) of the periphery of the wafer W, and adjust the interval between the aforementioned proximity arrangement members and the wafer W based on this information to prevent unexpected contact between the proximity arrangement members and the wafer W.

[0055] Furthermore, the control unit 7 can be implemented using a combination of hardware and software. For example, a general-purpose computer can be used as the hardware, and a program (device control program and processing procedure, etc.) for operating the general-purpose computer can be used as the software. The software is stored on any storage medium that can be read by the hardware (i.e., a non-transitory computer-readable storage medium). Therefore, the software can be stored on a storage medium such as a hard disk drive permanently installed in the computer, or it can be stored on a storage medium that can be removably installed in the computer, such as a CD-ROM, DVD, or flash memory.

[0056] [Beveled Cut]

[0057] Next, the beveling process performed by the substrate processing apparatus 1 described above will be explained in detail. Hereinafter, the beveling process performed on the upper surface of the wafer W using a processing liquid ejected from the chemical solution nozzle 73 will be explained in particular.

[0058] Figure 3 This is a diagram used to illustrate the wafer angle θ and the dicing width B. (a) shows a top view of wafer W, and (b) shows a cross-sectional view of wafer W. Figure 3 As shown in (a), the wafer angle θ is represented by the angle formed about the central axis O of the wafer relative to the reference line R extending radially along the wafer W. The dicing width B represents the width of the film to be removed from the periphery of the wafer W by the processing liquid, as shown in (a). Figure 3 As shown in (b), its range is represented by the distance from the outermost periphery of wafer W. Furthermore, in Figure 3 In (b), reference numeral "S1" indicates the upper surface of the wafer W, which is close to the chemical solution nozzle 73 and the rinsing nozzle 76, and reference numeral "S2" indicates the lower surface of the wafer W, which is close to the chemical solution outlet 90 and the rinsing liquid outlet 93.

[0059] Figure 4 This is a graph illustrating the relationship between the wafer angle θ (horizontal axis) and the dicing width B (vertical axis). Ideally, the dicing width B is a constant value regardless of the wafer angle θ; however, as... Figure 4 As shown, the actual dicing width B varies along with the wafer angle θ. The difference between the maximum and minimum dicing width B over the entire circumference of the wafer W (i.e., the range of "0° ≤ wafer angle θ < 360°") represents the "dicing range r" (i.e., "dicing range r = maximum dicing width - minimum dicing width"). Therefore, the smaller the dicing range r, the more precise the beveling process. To ensure the quality of wafer W (especially beveling), the dicing range r should be set below the desired target value (i.e., the target value).

[0060] The size of the cutting range r varies depending on the fluctuation of the thickness direction of the upper surface of the peripheral portion of wafer W. The greater the fluctuation in the thickness direction of the upper surface of the peripheral portion of wafer W, the larger the cutting range r. The fluctuation in the thickness direction of the upper surface of the peripheral portion of wafer W is measured by a distance detection sensor, and the measurement result is sent from the distance detection sensor to the control unit 7 as information related to the fluctuation of the deformation of the peripheral portion.

[0061] Figure 5 This diagram illustrates an example configuration of the wafer W and the distance detection sensor 11. The substrate processing apparatus 1 of this embodiment further includes a distance detection sensor 11 disposed above the wafer W held by the substrate holding portion 21 at a position opposite to the wafer W. The distance detection sensor 11 measures the upper surface detection height H, which represents the distance between the peripheral portion of the wafer W and the distance detection sensor 11, and can be constructed using, for example, an optical sensor. The distance detection sensor 11 measures the amount of deformation of the peripheral portion of the wafer W in the thickness direction; the greater the warping of the wafer W towards the lower surface, the greater the upper surface detection height H. Furthermore, since typical beveling is performed within a range of approximately 0.5 mm to 3 mm from the outermost periphery of the upper surface S1 of the wafer W, it is preferable that the distance detection sensor 11 measures the upper surface detection height H within this range.

[0062] In this embodiment, the distance detection sensor 11 is fixedly installed. Measurements are performed by the distance detection sensor 11 while the wafer W is rotated using the substrate holding portion 21, thereby acquiring information related to the detection height H of the upper surface over the entire circumference of the wafer W. The specific installation location of the distance detection sensor 11 is not particularly limited; for example, it can be located in… Figure 1 A distance detection sensor 11 is provided on the surface of the cover member 5 opposite to the periphery of the wafer W. In particular, in this embodiment, it is preferable that, in order to control the cutting width B of the beveling process on the upper surface S1 of the wafer W, the distance detection sensor 11 is provided at a position where the upper surface detection height H of the upper surface S1 of the wafer W can be measured.

[0063] However, assuming the thickness of wafer W is substantially uniform, the fluctuation in the position of the upper surface S1 of wafer W mainly stems from the warping of wafer W and is closely related to the positions of the upper surface S1 and the lower surface S2 of wafer W. Therefore, in such a case, the position of the lower surface S2 of wafer W can be measured by the distance detection sensor 11, and the upper surface detection height H related to the upper surface S1 of wafer W can be estimated based on the measurement result. Alternatively, the distance detection sensor 11 can be located outside the substrate processing apparatus 1. It is also possible that the distance detection sensor 11 is installed in a dedicated module located, for example, in front of the substrate processing apparatus 1, and before wafer W is input to the substrate processing apparatus 1, information related to the upper surface detection height H over the entire circumference of the periphery of wafer W is acquired by the distance detection sensor 11. In this case, the information related to the upper surface detection height H acquired by the distance detection sensor 11, as data indicating the variation in the amount of deformation of the periphery, can also be sent from the distance detection sensor 11 to the control unit 7.

[0064] Figure 6 This is a diagram illustrating the relationship between wafer angle θ (horizontal axis) and upper surface detection height H (vertical axis). As described above, the position of the upper surface S1 at the periphery of wafer W actually fluctuates along the thickness direction. The degree of fluctuation in the position of the upper surface S1 in the thickness direction of wafer W can be expressed as an indicator of the "wafer warpage P". This "wafer warpage P" is represented by the difference between the maximum and minimum values ​​of the upper surface detection height H over the entire circumference of wafer W (i.e., the range of "0° ≤ wafer angle θ < 360°") (i.e., "wafer warpage P = maximum upper surface detection height - minimum upper surface detection height"). Therefore, the larger the wafer warpage P, the greater the fluctuation in the position of the upper surface S1 at the periphery of wafer W along the thickness direction; the smaller the wafer warpage P, the smaller the fluctuation in the position of the upper surface S1 at the periphery of wafer W in the thickness direction.

[0065] Considering the characteristics of the wafer warpage P described above, the substrate processing apparatus 1 of this embodiment performs oblique cutting of the upper surface S1 of the wafer W according to a substrate processing method including the following steps.

[0066] First, the wafer W, which will be subject to beveling, is input into the substrate processing apparatus 1, and a process is performed in which the wafer W is held by the substrate holding part 21. Then, a process is performed to obtain the wafer warpage amount P as information related to the variation of the amount of deformation in the thickness direction of the peripheral portion of the upper surface S1 of the wafer W. As described above, the wafer warpage amount P can be measured by the distance detection sensor 11 provided in the substrate processing apparatus 1 after the wafer W is input into the substrate processing apparatus 1, or it can be measured by the distance detection sensor 11 before the wafer W is input into the substrate processing apparatus 1. Then, a process is performed to control the ejection angle and ejection position of the processing liquid from the chemical solution nozzle 73 relative to the peripheral portion based on the obtained wafer warpage amount P. Then, a process is performed in which the processing liquid is ejected from the chemical solution nozzle 73 toward the peripheral portion of the upper surface S1 of the rotating wafer W, and the processing liquid is applied to the peripheral portion of the upper surface S1 of the wafer W.

[0067] Hereinafter, a representative method for controlling the ejection angle and ejection position of the processing liquid from the chemical solution nozzle 73 based on the wafer warpage P will be described by way of example. Furthermore, in any of the control methods described below, the control unit 7 controls the ejection drive unit such as the nozzle drive unit 70, and by adjusting the ejection angle and ejection position of the processing liquid from the chemical solution nozzle 73 in a manner that mitigates changes in the cutting width B, the cutting range r is reduced to below the target value. In particular, the ejection position (i.e., arrival position) of the processing liquid on the upper surface S1 of the wafer W is set to a position based on the desired cutting width B, and is set to a substantially the same position regardless of changes in the ejection angle.

[0068] [First Control Method]

[0069] Figure 7 This is a cross-sectional view illustrating the ejection angle control of the processing liquid from the chemical solution nozzle 73 in the first control method, schematically showing the chemical solution nozzle 73 and the wafer W.

[0070] In this control method, the ejection angle of the processing liquid controlled by the control unit 7 is a first angle α formed by "the travel direction of the processing liquid ejected from the chemical solution nozzle 73 toward the periphery of the wafer W" and "the extension direction of the processing surface (i.e., the upper surface S1 in this embodiment) given by the processing liquid in the periphery of the wafer W".

[0071] Generally, the smaller the first angle α, the greater the impact of the positional variation in the thickness direction of the upper surface S1 of wafer W, and the greater the deviation of the arrival position of the processing liquid at the periphery of wafer W from the target position (see the following description). Figure 13 The attached diagram is labeled "C" (deviation from the arrival position). There is a tendency for the following: for example... Figure 7The solid line in the middle shows the liquid flow 74b of the treatment liquid ejected from the chemical solution nozzle 73 at an angle of α1. Figure 7 Compared to the liquid flow 74b of the processing liquid ejected from the chemical solution nozzle 73 at "first angle = α2 (where "α2>α1")", the arrival position on the upper surface S1 of the wafer W deviates from the target position.

[0072] Figure 8 This is a graph illustrating the relationship between the wafer warpage P (horizontal axis) and the cutting range r (vertical axis) in the example of the ejection angle (i.e., the first angle α) of the processing liquid for the first control method. Figure 8 The relationship between wafer warpage P and dicing range r is illustrated for the cases where the first angle α is 20°, 25°, 35° and 45°.

[0073] As also by Figure 8 It is understood that the smaller the first angle α, representing the ejection angle of the processing liquid from the chemical solution nozzle 73, the greater the impact of the wafer warpage P on the increase or decrease of the cutting range r. Therefore, from the viewpoint of reducing the impact of the wafer warpage P on the cutting range r, it is preferable to increase the first angle α. However, as the first angle α increases, there is a tendency for the amount and probability of the processing liquid reaching the upper surface S1 of the wafer W to splash back towards the center side (i.e., the device portion side) of the wafer W to increase. Therefore, it is preferable to eject the processing liquid from the chemical solution nozzle 73 at an optimal first angle α that can prevent the processing liquid from splashing back towards the center side of the wafer W while suppressing the impact of the wafer warpage P on the cutting range r.

[0074] Figure 9 This is a diagram illustrating the relationship between the wafer warpage P, representing the first angle α (horizontal axis), and the cutting range r (vertical axis) for the first control method. Figure 9 The relationship between the first angle α and the cutting range r is illustrated for the cases where the wafer warpage P is 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm and 0.7 mm.

[0075] Let's examine the case where, for example, the target value of the cutting range r is set to "0.15 mm". In this case, if based on the distance detection sensor 11 (refer to...) Figure 5 The measurement result indicates that the wafer warpage P is "0.7mm", then the optimal first angle α becomes Figure 9 The first angle α (at the point on the line "P = 0.7 mm" corresponding to "cutting range r = 0.15 mm") is shown. Figure 9 The example shown is approximately 35°. The optimal first angle α can also be determined similarly for other wafer warpage values ​​P.

[0076] In this way, the control unit 7 can determine the optimal first angle α based on the target value of the cutting range r and the wafer warpage P obtained from the measurement results of the distance detection sensor 11. Then, the control unit 7 controls the ejection drive unit (in this embodiment, the nozzle drive unit 70) to adjust the orientation of the chemical solution nozzle 73 so that the processing liquid is ejected from the chemical solution nozzle 73 at the optimal first angle α or higher, thereby enabling the cutting range r to be set below the target value.

[0077] Thus, in this control method, the control unit 7 controls the ejection angle of the processing liquid from the chemical solution nozzle 73 so that the greater the variation amplitude of the deformation amount in the thickness direction at the periphery of the wafer W, the greater the first angle α. That is, the control unit 7 controls the ejection angle of the processing liquid from the chemical solution nozzle 73 so that the cutting range r (i.e., the liquid-attachment variation amplitude), which represents the variation amplitude of the distance from the outermost periphery of the wafer W to the arrival position of the processing liquid at the periphery of the wafer W, becomes a target value or less than that target value. This cutting range r can be derived from information related to the variation amplitude of the deformation amount in the thickness direction at the periphery of the wafer W (i.e., wafer warpage P) obtained from the measurement results of the distance detection sensor 11, taking into account the first angle α (see reference). Figure 8 ).

[0078] Furthermore, the target value of the cutting range r can be either a predetermined specific value or a variable value. When the target value of the cutting range r is variable, the control unit 7 can acquire information related to the target value of the cutting range r and determine the target value based on that information. The information related to the target value of the cutting range r can also be, for example, information about the desired cutting range r input by the user to the control unit 7. Therefore, in the example above, the target value of the cutting range r is set to 0.15 mm, but the target value of the cutting range r is not limited to this and can also be, for example, 0.2 mm. Additionally, the target value of the cutting range r can be changed for each wafer W depending on the wafer W to be beveled.

[0079] [Second Control Method]

[0080] Figure 10 This is an enlarged top view illustrating the ejection angle control of the processing liquid from the chemical solution nozzle 73 in the second control method, schematically showing the chemical solution nozzle 73 and the wafer W.

[0081] In this control method, the ejection angle of the processing liquid controlled by the control unit 7 is a second angle β formed by "the direction of the projected travel path Q obtained by projecting the travel path of the processing liquid ejected from the chemical solution nozzle 73 toward the periphery of the wafer W onto the wafer W" and "the direction of the tangent L of the wafer W at the intersection point F between the extension of the projected travel path Q and the outermost periphery of the upper surface S1 of the wafer W".

[0082] Generally, the larger the second angle β in this horizontal direction, the greater the impact of the positional variation of the upper surface S1 of wafer W in the thickness direction, and the greater the deviation of the arrival position of the processing liquid at the periphery of wafer W from the target position (see the following description). Figure 13 The reference numeral "C" (arrival position deviation) is used in the attached figures. For example, compared with the processing liquid ejected from the chemical solution nozzle 73 at "second angle = β2 (where "β2 < β1")", the processing liquid ejected from the chemical solution nozzle 73 at "second angle = β1" tends to have an arrival position on the upper surface S1 of the wafer W that deviates from the target position.

[0083] Figure 11 This is a graph illustrating the relationship between the wafer warpage P (horizontal axis) and the cutting range r (vertical axis) in the example of the ejection angle (i.e., the second angle β) of the processing liquid for the second control method. Figure 11 The relationship between wafer warpage P and dicing range r is illustrated for the cases where the second angle β is 1°, 3°, 5° and 8.5°.

[0084] As also by Figure 11 It is understood that the larger the second angle β, representing the ejection angle of the processing liquid from the chemical solution nozzle 73, the greater the impact of wafer warpage P on the increase or decrease of the cutting range r. Therefore, from the viewpoint of reducing the impact of wafer warpage P on the cutting range r, it is preferable to reduce the second angle β. However, there is a tendency for the utilization efficiency of the processing liquid to decrease as the second angle β decreases. Therefore, it is preferable to eject the processing liquid from the chemical solution nozzle 73 at an optimal second angle β that can prevent the decrease in the utilization efficiency of the processing liquid while suppressing the impact of wafer warpage P on the cutting range r.

[0085] Figure 12 This is a diagram illustrating the relationship between the wafer warpage P, representing the second angle β (horizontal axis), and the cutting range r (vertical axis) for the second control method. Figure 12 The relationship between the second angle β and the cutting range r is illustrated for the cases where the wafer warpage P is 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm and 0.7 mm.

[0086] For example, let's examine the case where the target value of the cutting range r is set to "0.15 mm". In this case, if based on the distance detection sensor 11 (refer to...) Figure 5 The measurement results indicate that the wafer warpage P is "0.7mm", therefore the optimal second angle β becomes... Figure 12 The second angle β (at the point on the line "P = 0.7 mm" corresponding to "cutting range r = 0.15 mm") is shown. Figure 12 In the example shown, approximately 4.5°). The optimal second angle β can also be determined similarly for other wafer warpage values ​​P.

[0087] In this way, the control unit 7 can determine the optimal second angle β based on the target value of the cutting range r and the wafer warpage P obtained from the measurement results of the distance detection sensor 11. Furthermore, the control unit 7 controls the ejection drive unit (in this embodiment, the nozzle drive unit 70) to adjust the orientation of the chemical solution nozzle 73 so that the processing liquid is ejected from the chemical solution nozzle 73 at the optimal second angle β or an angle lower than the second angle β, thereby enabling the cutting range r to be set to a value lower than the target value.

[0088] Thus, in this control method, the control unit 7 controls the ejection angle of the processing liquid from the chemical solution nozzle 73 so that the greater the variation in the amount of deformation in the thickness direction at the periphery of the wafer W, the smaller the second angle β. That is, the control unit 7 controls the ejection angle of the processing liquid from the chemical solution nozzle 73 so that the cutting range r (i.e., the liquid-attachment variation range), representing the variation in the distance from the outermost periphery of the wafer W to the arrival position of the processing liquid at the periphery of the wafer W, becomes a target value or less. This cutting range r can be derived from information related to the variation in the amount of deformation in the thickness direction at the periphery of the wafer W (i.e., wafer warpage P) obtained from the measurement results of the distance detection sensor 11, taking into account the second angle β (see reference). Figure 11 ).

[0089] Furthermore, in this control method, the target value of the cutting range r can be either a predetermined specific value or a variable value. When the target value of the cutting range r is a variable value, the control unit 7 can acquire information related to the target value of the cutting range r and determine the target value based on that information.

[0090] [Third Control Method]

[0091] In this control method, the ejection direction of the treatment liquid from the chemical solution nozzle 73 is controlled by adjusting both the first angle α (first control method) and the second angle β (second control method) mentioned above.

[0092] Figure 13This is a schematic diagram illustrating the deviation C of the arrival position of the treatment liquid from the chemical solution nozzle 73.

[0093] exist Figure 13 In the case where the processing liquid ejected from the chemical solution nozzle 73 travels along the direction of travel D1, the arrival position (i.e., ideal arrival point T1) of the processing liquid on the upper surface S1 of the ideal wafer W, which has a perfectly flat shape, is separated from the chemical solution nozzle 73 by an ideal distance h1 in the thickness direction of the wafer W. However, in reality, due to warping of the wafer W, the upper surface S1 of the wafer W is skewed along the thickness direction. For example, if the wafer W is warped to the lower surface side, the processing liquid ejected from the chemical solution nozzle 73 travels further along the direction of travel D2 and arrives at a position (actual arrival point T2) that is separated from the ideal arrival point T1 by a distance deviation h2 in the thickness direction. Therefore, the distance detection sensor 11 (refer to...) Figure 5 The upper surface detection height H (i.e., the distance between the chemical solution nozzle 73 and the upper surface S1 of the wafer W) is represented by the sum of the ideal interval h1 and the interval deviation h2.

[0094] exist Figure 13 In the middle, along the above-mentioned projection route (refer to...) Figure 10 The line extending from the extension of the reference numeral "Q" and the intersection point F of the outermost periphery of the upper surface S1 of the wafer W, along with the tangent of the wafer W, and passing through the aforementioned actual arrival point T2, is denoted by reference numeral "D3". The arrival position deviation C, expressed as the "difference between the position of the ideal arrival point T1 and the position of the actual arrival point T2" in the direction perpendicular to this line D3, is expressed by the following formula.

[0095] [Relation 1]

[0096] C={sinβ×(h1+h2) / tanα}-{sinβ×h1 / tanα}=sinβ×h2 / tanα

[0097] As can be seen from the above formula, the position deviation C can be represented by a function with parameters including the interval deviation h2 of the upper surface S1 of the wafer W, the first angle α and the second angle β related to the ejection direction of the processing liquid from the chemical solution nozzle 73. That is, by adjusting at least one of the first angle α and the second angle β according to the interval deviation h2, the position deviation C can be adjusted to the desired value.

[0098] The aforementioned wafer warpage P (refer to) Figure 6 )based on Figure 13 The variation range of the interval deviation h2, and the cutting range r (refer to) Figure 4 )based on Figure 13The variation range of the deviation C of the arrival position. Therefore, by taking into account the above relationship 1 and adjusting the first angle α and / or the second angle β according to the wafer warpage P, the cutting range r can be adjusted to the target value.

[0099] Based on the above-described investigation and the wafer warpage P measured by the distance detection sensor 11, the control unit 7 determines the optimal first angle α and second angle β. Then, the control unit 7 controls the nozzle drive unit 70 and other ejection drive units to eject the processing liquid from the chemical solution nozzle 73 at the ejection angle based on the determined optimal first angle α and second angle β, thereby adjusting the cutting range r to the target value.

[0100] Furthermore, regarding the first to third control methods described above, data such as a table showing the correspondence between the "ejection angle (first angle α and / or second angle β) of the processing liquid from the chemical solution nozzle 73" and the cutting range r and wafer warpage P, which allows the cutting range r to be adjusted to the target value, can be pre-calculated and stored in a memory (not shown). In this case, the control unit 7 can easily and quickly obtain the "ejection angle (first angle α and / or second angle β) of the processing liquid from the chemical solution nozzle 73" based on the target value of the cutting range r and the wafer warpage P by referring to the data stored in the memory. Then, the control unit 7 controls the ejection drive unit based on the ejection angle obtained in the above manner, and can adjust the orientation of the chemical solution nozzle 73. Similarly, regarding the ejection position of the processing liquid, data such as a table showing the correspondence between the "horizontal position of the chemical solution nozzle 73" and the cutting range r and wafer warpage P can also be pre-calculated and stored in a memory (not shown). In this case, the control unit 7 can obtain the "horizontal position of the chemical solution nozzle 73" based on the target value of the cutting range r and the wafer warpage P by referring to the data stored in the memory. Then, the control unit 7 controls the ejection drive unit based on the obtained horizontal position of the first chemical solution nozzle 73, and can adjust the horizontal position of the chemical solution nozzle 73.

[0101] As explained above, according to the substrate processing apparatus 1 and substrate processing method of this embodiment, even when the upper surface position of the periphery of the wafer W is not constant due to warping or other reasons, the cutting width B of the beveling process can be kept within the desired range, thus promoting the uniformity of the cutting width B. Therefore, the device portion inside the wafer W, where adhesion of the processing liquid is not desired, can be protected relative to the processing liquid, and the film to be removed can be precisely removed from the periphery of the wafer W using the processing liquid.

[0102] This invention is not limited to the embodiments and modifications described above, and may also include various forms with various modifications that can be conceived by those skilled in the art. The effects of this invention are also not limited to the matters described above. Therefore, without departing from the technical spirit and essence of this invention, various additions, modifications, and partial deletions can be made to the elements described in the claims and specification.

[0103] For example, in the above embodiment, the cutting range r of the upper surface S1 of wafer W is adjusted, but the cutting range r of the lower surface S2 of wafer W can also be adjusted in the same way. In this case, a mechanism is needed that can control the ejection direction of the processing liquid used for the beveling process of the lower surface S2 of wafer W. Alternatives include... Figure 1 The chemical solution nozzle 90 shown can also spray the processing solution toward the periphery of the lower surface S2 of the wafer W from a nozzle that "changes the spray direction of the processing solution to any direction" like the chemical solution nozzle 73.

[0104] Furthermore, in the above embodiment, only the first chemical solution nozzle 73 and the first rinsing nozzle 76 are shown as devices for applying processing liquid and rinsing liquid to the upper surface S1 of the periphery of the wafer W. However, processing liquid and rinsing liquid can also be applied to the upper surface S1 of the periphery of the wafer W from other additionally provided devices. Similarly, processing liquid and rinsing liquid can also be applied to the lower surface S2 of the periphery of the wafer W from other devices provided independently of the second chemical solution outlet 90 and the second rinsing liquid outlet 93.

Claims

1. A control device for controlling the operation of a substrate processing apparatus that supplies processing liquid from a processing liquid ejection section to the periphery of a rotating substrate. The control device acquires information related to the variation range of the deformation of the peripheral portion in the thickness direction of the substrate. The control device controls the spray angle and spray position of the treatment liquid from the treatment liquid ejection section relative to the peripheral portion based on information related to the variation range of the deformation of the peripheral portion. in, Information relating to the variation in the amount of deformation of the peripheral portion includes the amount of warpage of the substrate.

2. The control device according to claim 1, wherein, The ejection angle includes a first angle, which is formed by the travel direction of the treatment liquid ejected from the treatment liquid ejection portion toward the peripheral portion and the extension direction of the treatment surface in the peripheral portion to which the treatment liquid is supplied.

3. The control device according to claim 1 or 2, wherein, The ejection angle includes a second angle, which is formed by the direction of the projected travel path of the processing liquid ejected from the processing liquid ejection portion toward the peripheral portion projected onto the substrate, and the direction of the tangent of the substrate at the intersection of the extension line of the projected travel path and the outermost peripheral portion of the substrate.

4. The control device according to claim 1 or 2, wherein, Information relating to the variation in the amount of deformation of the peripheral portion is obtained by a sensor that measures the amount of deformation of the peripheral portion in the thickness direction of the substrate.

5. The control device according to claim 1 or 2, wherein, The ejection angle is controlled so that the liquid coating variation range is at or below a target value, which represents the variation range of the distance from the outermost periphery of the substrate to the arrival position of the processing liquid at the peripheral portion, and is derived based on information related to the variation range of the deformation amount of the peripheral portion.

6. The control device according to claim 5, wherein, Information related to a target value of the liquid coating variation amplitude is obtained, and the target value is determined based on the information related to the target value.

7. The control device according to claim 1 or 2, wherein, The spacing between the proximity configuration member and the substrate is adjusted based on information relating to the variation in the amount of deformation of the peripheral portion, wherein the proximity configuration member is disposed above and below the substrate.

8. A storage medium storing a computer program for executing a control method in which the operation of a substrate processing apparatus that supplies processing liquid from a processing liquid ejection section to the periphery of a rotating substrate is controlled. The control method includes the following steps: Information related to the variation range of the deformation amount of the peripheral portion in the thickness direction of the substrate is obtained. Based on information relating to the variation in the deformation of the peripheral portion, the ejection angle and position of the treatment fluid from the treatment fluid ejection section relative to the peripheral portion are controlled. in, Information relating to the variation in the amount of deformation of the peripheral portion includes the amount of warpage of the substrate.

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