Homogeneous integrated device and preparation method thereof

Abstract

The homogeneous integrated device provided by the present application comprises a substrate (1), a non-specific doping layer (2), an n-type doping layer (3), a multi-quantum well layer (5), a p-type doping layer (6), an n-type contact electrode (4), a p-type contact electrode (7) and an optical waveguide structure (30). The homogeneous integrated device provided by the present application can efficiently prepare an air / nitride / air optical waveguide structure thanks to the laser etching sapphire combined with a metal mask protection process, and has a large difference in dielectric constants and a higher optical coupling efficiency; thanks to the Ag / Al material in the p-type contact electrode, it can effectively reflect the visible light / ultraviolet light emitted from the p-side, and can increase the light intensity received by the detector; thanks to the Ag / Al material in the n-type contact electrode, it can effectively reflect the visible light / ultraviolet light from the side, and concentrate the light into the optical waveguide structure, thereby improving the optical coupling efficiency. In addition, the present application also provides a method for preparing the homogeneous integrated device.

Description

Technical Field

[0001] The present application relates to the technical field of visible light and ultraviolet light emitting devices, and in particular to a homogeneous integrated device and a preparation method thereof. Background Art

[0002] Group III nitride materials have excellent chemical stability, radiation resistance, and a directly adjustable band gap of 0.7-6.2eV, and are widely used in optoelectronic devices and power devices. In recent years, it has been found that group III nitride epitaxy based on a multi-quantum well structure has the characteristics of simultaneous luminescence and detection, so it can be used in a homogeneous integrated system that integrates luminescence and detection. This homogeneous integrated system can replace the traditional information transmission and processing system based on electrical signals through optical signals. It has high bandwidth and fast transmission speed, and has unique advantages in big data processing, 5G communication, Internet of Things and other fields.

[0003] At present, the preparation of optical waveguide structures with high optical coupling efficiency is a major difficulty. Current research mainly focuses on nitride epitaxial homogeneous integration based on Si substrates, and uses the easy etching characteristics of Si to prepare air / nitride / air optical waveguide structures. However, the nitride epitaxial technology based on Si substrates is immature, and the prepared homogeneous integrated system cannot meet the needs of practical applications. In comparison, the field of III-nitride epitaxial technology based on sapphire substrates is more mature, with higher material quality and superior device performance, which can greatly improve the bandwidth and transmission rate of communications. Therefore, homogeneous integrated systems based on sapphire substrates have greater application potential and market prospects. However, since the sapphire substrate has extremely high physical and chemical stability and a thickness of several hundred microns, it is difficult to etch the epitaxial layer by traditional solution or ICP etching methods, which brings great difficulties to the preparation of air / nitride / air optical waveguide structures. At the same time, the optical coupling efficiency of sapphire / nitride / air optical waveguide structures is low. The sapphire substrate can be etched quickly and efficiently using laser etching. However, it is easy to damage the epitaxy and it is difficult to obtain a flat and smooth nitride / air interface. Summary of the invention

[0004] Based on this, the present invention aims to solve the problems existing in the prior art and provides a homogeneous integrated device with higher signal strength and transmission rate and a preparation method. To achieve the above purpose, the technical solution adopted in this application is as follows:

[0005] One of the purposes of the present application is to provide a homogeneous integrated device, comprising:

[0006] A substrate (1), wherein a patterned metal protective sacrificial layer is formed on the substrate (1);

[0007] A non-specific doping layer (2), located on the patterned metal protective sacrificial layer and away from the substrate (1);

[0008] An n-type doped layer (3), located on one side of the non-specific doped layer (2) and away from the substrate (1);

[0009] A multi-quantum well layer (5), located on one side of the n-type doped layer (3) and away from the substrate (1);

[0010] A p-type doped layer (6), located on one side of the multi-quantum well layer (5) and away from the substrate (1);

[0011] An n-type contact electrode (4), located on one side of the n-type doped layer (3) and away from the substrate (1);

[0012] A p-type contact electrode (7), located on one side of the p-type doped layer (6) and away from the substrate (1);

[0013] The non-specific doped layer (2) and the n-type doped layer (3) form an optical waveguide structure (30). The side surface of the substrate (1) corresponding to the optical waveguide structure (30) has surface features of laser etching. The upper and lower air / nitride interfaces of the optical waveguide structure (30) are smooth and flat, and the optical waveguide structure (30) is an air / nitride / air structure.

[0014] In some embodiments, the thickness of the patterned metal protection sacrificial layer is between 10 nm and 4000 nm. The patterned metal protection sacrificial layer is a high-temperature resistant metal, and the melting point of the high-temperature resistant metal is greater than 1300 °C.

[0015] In some embodiments, the high-temperature resistant metal includes Ti or V or W.

[0016] In some embodiments, the non-specific doped layer (2), the n-type doped layer (3), and the p-type doped layer (6) are all one of InN or InGaN or AlN or InAlN or InAlGaN materials.

[0017] In some embodiments, the multi-quantum well layer (5) is a multi-quantum well layer of InGaN / GaN or AlxGa1-xN / AlyGa1-yN, where 0 < x < 1 and 0 < y < 1; or the multi-quantum well layer is at least two combinations of InN, InGaN, AlN, InAlN, and InAlGaN.

[0018] In some embodiments, the number of well layer / barrier layer periods of the multi-quantum well layer (5) is m; where 5 ≤ m ≤ 20 and m is an integer; the thickness of the well layer of the multi-quantum well layer (5) is 0.5 - 5 nm, and the thickness of the barrier layer of the multi-quantum well layer (5) is 5 - 15 nm.

[0019] In some embodiments, the n-type contact electrode (4) is Ti / Al / Ti / Au, wherein the thickness of Al is 0.5-5 um.

[0020] In some embodiments, the p-type contact electrode (7) is Ni / Al / Ti / Au.

[0021] In some of the embodiments, the optical waveguide structure (30) comprises a non-specific doping layer (2) with a thickness between 10 nm and 5000 nm and an n-type doping layer (3) with a thickness between 10 nm and 5000 nm.

[0022] The second object of the present application is to provide a method for preparing the homogeneous integrated device, comprising the following steps:

[0023] Preparing the patterned metal protective sacrificial layer on the substrate (1);

[0024] According to the structure of the homogeneous integrated device, the non-specific doping layer (2), the n-type doping layer (3), the multi-quantum well layer (5), the p-type doping layer (6), the n-type contact electrode (4) and the p-type contact electrode (7) are epitaxially formed on the patterned metal protective sacrificial layer;

[0025] Preparing a device channel and a mesa structure on the epitaxial layer according to the structure of the homogeneous integrated device;

[0026] preparing a protective layer on the surface of the epitaxial layer;

[0027] Etching the substrate below the metal pattern using a laser to etch into the metal pattern layer;

[0028] Etching the metal pattern layer with an acid solution and removing the epitaxial protective layer to obtain the optical waveguide structure (30);

[0029] Homogeneous integrated devices are obtained based on micro-nano processing technology.

[0030] In some embodiments, the laser wavelength is between 200 nm and 400 nm, and the power is between 10 mW and 400 mW.

[0031] In some embodiments, the epitaxial surface protection layer is a soluble solid material, and the solid material is a photoresist or a metal.

[0032] In some embodiments, the acidic solution is a solution capable of dissolving the patterned metal material, and the solution includes sulfuric acid, nitric acid, hydrochloric acid, or a mixed solution thereof.

[0033] This application adopts the above technical solution, and its beneficial effects are as follows:

[0034] The homogeneous integrated device provided by the present application comprises a substrate (1), a non-specific doping layer (2), an n-type doping layer (3), a multi-quantum well layer (5), a p-type doping layer (6), an n-type contact electrode (4) and a p-type contact electrode (7), which is located on the p-type doping layer (6) and away from the substrate (1); the non-specific doping layer (2) and the n-type doping layer (3) form an optical waveguide structure (30); the side surface of the substrate (1) at the corresponding position of the optical waveguide structure (30) has a laser-etched surface feature; the upper and lower air / nitride interfaces of the optical waveguide structure (30) are smooth and flat; The optical waveguide structure (30) is an air / nitride / air structure. The homogeneous integrated device provided by the present application can efficiently prepare the air / nitride / air optical waveguide structure thanks to the laser etching sapphire combined with the metal mask protection process. The difference in dielectric constant is large and the optical coupling efficiency is higher. Thanks to the Ag / Al material in the p-type contact electrode, the visible light / ultraviolet light emitted from the p-side can be effectively reflected, and the light intensity received by the detector can be increased. Thanks to the Ag / Al material in the n-type contact electrode, the visible light / ultraviolet light can be effectively reflected from the side, and the light is concentrated into the optical waveguide structure, thereby improving the optical coupling efficiency. The homogeneous integrated device based on the metal mask provided by the present application has higher signal strength and transmission rate.

[0035] The preparation method of the homogeneous integrated device provided in the present application first releases material stress during the epitaxy process and improves material quality; secondly, the epitaxial structure is protected from laser damage during the laser etching process; thirdly, after laser etching, an acid solution can be used to etch to obtain a flat and smooth surface of the optical waveguide structure. The laser etching method used in the present application has a much higher rate of etching sapphire than the traditional etching method, and can etch a specific size area at a specific location. Therefore, the method can efficiently prepare an optical waveguide structure, and because the optical waveguide structure is composed of air with a low dielectric constant and a nitride homogeneous material with a high dielectric constant, its total reflection angle is larger and the optical coupling effect is higher. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0037] Figure 1 It is a schematic diagram of the structure of the homogeneous integrated device provided in Example 1 of the present invention.

[0038] Figure 2 It is a flow chart of the steps of the method for preparing a homogeneous integrated device provided in Example 2 of the present invention.

[0039] Figure 3 It is a schematic diagram of a periodically patterned metal mask structure on a substrate provided in Example 2 of the present invention.

[0040] Figure 4 It is a schematic diagram of a homogeneous integrated epitaxial structure integrating light emission and detection on a patterned metal mask provided in Example 2 of the present invention.

[0041] Figure 5 It is a schematic diagram of a homogeneous integrated isolation channel and mesa structure prepared by using a mask metal as an overlay mark and utilizing a micro-nano processing technology, as provided in Example 2 of the present invention.

[0042] Figure 6 It is a schematic diagram of the device structure obtained after laser etching the sapphire substrate corresponding to the metal mask provided in Example 2 of the present invention.

[0043] Figure 7 It is a schematic diagram of the device structure of an optical waveguide structure having a flat and smooth surface obtained after etching the metal mask with an acidic solution provided in Example 2 of the present invention.

[0044] Figure 8 It is a schematic diagram of the structure of a homogeneous integrated device prepared by micro-nano processing technology provided in Example 2 of the present invention. DETAILED DESCRIPTION

[0045] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0046] In the description of the present application, it should be understood that the terms "upper", "lower", "horizontal", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0047] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0048] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments.

[0049] Example 1

[0050] See also Figure 1 , is a schematic structural diagram of a homogeneous integrated device provided in an embodiment of the present application, comprising: a substrate (1), on which a patterned metal protective sacrificial layer is formed; a non-specific doping layer (2), located on a side of the patterned metal protective sacrificial layer and away from the substrate (1); an n-type doping layer (3), located on a side of the non-specific doping layer (2) and away from the substrate (1); a multi-quantum well layer (5), located on a side of the n-type doping layer (3) and away from the substrate (1); a p-type doping layer (6), located on the multi-quantum well layer (5) and away from the substrate (1); 1); an n-type contact electrode (4) located on the n-type doped layer (3) and away from the substrate (1); a p-type contact electrode (7) located on the p-type doped layer (6) and away from the substrate (1); the non-specific doping layer (2) and the n-type doping layer (3) form an optical waveguide structure (30); the side of the substrate (1) at the corresponding position of the optical waveguide structure (30) has a laser-etched surface feature; the upper and lower air / nitride interfaces of the optical waveguide structure (30) are smooth and flat; the optical waveguide structure (30) is an air / nitride / air structure. The implementation method of each component is described in detail below.

[0051] In this embodiment, the substrate (1) is a sapphire substrate.

[0052] It should be noted that the homogeneous integrated system based on sapphire substrate has high epitaxial material quality, the prepared device has good performance, and the optical waveguide structure has higher light coupling efficiency due to low dislocation density. The three-family compounds composed of InN, GaN, and AlN can form ternary and quaternary alloys, and their band gaps are continuously adjustable from 0.7 to 6.2 eV. The prepared homogeneous integrated system covers the infrared to deep ultraviolet bands.

[0053] In this embodiment, the thickness of the patterned metal protective sacrificial layer is between 10 nm and 4000 nm. The patterned metal protective sacrificial layer is a high temperature resistant metal, and the melting point of the high temperature resistant metal is greater than 1300°C.

[0054] Furthermore, the high temperature resistant metal includes Ti or V or W.

[0055] In this embodiment, the non-specific doping layer (2), the n-type doping layer (3) and the p-type doping layer (6) are all made of one of the materials InN, InGaN, AlN, InAlN or InAlGaN.

[0056] In this embodiment, the multiple quantum well layer (5) is a multiple quantum well layer of InGaN / GaN or AlxGa1-xN / AlyGa1-yN, where 0 < x < 1 and 0 < y < 1; or the multiple quantum well layer is at least a combination of two of InN, InGaN, AlN, InAlN, and InAlGaN.

[0057] Further, the number of well / barrier periods of the multiple quantum well layer (5) is m; where 5 ≤ m ≤ 20 and m is an integer; the thickness of the well layer of the multiple quantum well layer (5) is 0.5 - 5 nm, and the thickness of the barrier layer of the multiple quantum well layer (5) is 5 - 15 nm.

[0058] It can be understood that the well layer or the barrier layer of the multiple quantum well layer (5) can have its own internal structure and is composed of multiple nitride layers. For example, the well layer can be composed of InN / InxGa1-xN / InyGa1-yN. The number of quantum well periods, the thickness of the well and barrier layers, etc. vary within the required parameters according to the performance modulation requirements of the light-emitting device and the detection device.

[0059] In this embodiment, the n-type contact electrode (4) is Ti / Al / Ti / Au, where the thickness of Al is 0.5 - 5 μm.

[0060] It can be understood that Al can be replaced by other metals. For example, in the application of the visible light band, the n-type contact electrode is Ti / Ag / Ti / Au. This example does not include all available metals. For example, Cr, V, Ru, Ta, Co, Rh, etc. can all replace the above-mentioned metal layers.

[0061] In this embodiment, the p-type contact electrode (7) is Ni / Al / Ti / Au.

[0062] It can be understood that Al can be replaced by other metals. For example, in the application of the visible light band, the p-type contact electrode is Ni / Ag / Ti / Au. This example does not include all available metals. For example, Cr, V, Ru, Ta, Co, Rh, etc. can all replace the above-mentioned metal layers.

[0063] In this embodiment, the optical waveguide structure (30) includes a non-specifically doped layer (2) with a thickness between 10 nm and 5000 nm and an n-type doped layer (3) with a thickness between 10 nm and 5000 nm. The side surface of the sapphire substrate at the corresponding position has surface features of laser etching. Its upper and lower air / nitride interfaces are smooth and flat, and its optical waveguide structure is an air / nitride / air structure.

[0064] It can be understood that the thicknesses of the non-specifically doped layer and the n-type doped layer can be adjusted according to the length of the optical waveguide structure, the device size, etc.

[0065] The homogeneous integrated devices provided in the above embodiments of the present application benefit from the mature process of sapphire substrate epitaxy, and the performance of each device in the homogeneous integrated system is more excellent. Thanks to the laser etching of sapphire combined with the metal mask protection process, the air / nitride / air optical waveguide structure can be efficiently prepared, and its dielectric constant difference is large and the optical coupling efficiency is higher. Thanks to the Ag / Al material in the p-type contact electrode, the visible light / ultraviolet light emitted from the p-side can be effectively reflected, and the light intensity received by the detector can be increased; thanks to the Ag / Al material in the n-type contact electrode, the visible light / ultraviolet light can be effectively reflected from the side, and the light is concentrated into the optical waveguide structure, improving the optical coupling efficiency. The homogeneous integrated device based on the metal mask provided in the above embodiments of the present invention has higher signal strength and transmission rate.

[0066] Example 2

[0067] See also Figure 2 , is a flow chart of the steps of a method for preparing a homogeneous integrated device provided in the present application, comprising the following steps:

[0068] Step S110: preparing the patterned metal protective sacrificial layer on the substrate (1).

[0069] See also Figure 3 As shown, it is a schematic diagram of a periodically patterned metal mask structure on a substrate. In this embodiment, the patterned metal protective sacrificial layer (20) is made of a high-temperature resistant metal with a melting point greater than 1300°C, such as Ti, V, W and other metals, and has a thickness between 10nm and 4000nm. During the laser etching process, the epitaxial structure is protected from laser damage, which causes epitaxial damage and surface unevenness. After the substrate etching is completed, it can be dissolved with an acidic solution to obtain an optical waveguide structure with a smooth surface.

[0070] Step S120: According to the structure of the homogeneous integrated device, epitaxially grow the non-specific doped layer (2), the n-type doped layer (3), the multi-quantum well layer (5), the p-type doped layer (6), the n-type contact electrode (4) and the p-type contact electrode (7) on the patterned metal protective sacrificial layer.

[0071] See also Figure 4 , is a schematic diagram of a homogeneous integrated epitaxial structure integrating light emission and detection on a patterned metal mask provided in this embodiment.

[0072] Step S130: preparing a device channel and a mesa structure on the epitaxial layer according to the structure of the homogeneous integrated device.

[0073] See also Figure 5 , which is a schematic diagram of a homogeneous integrated isolation channel and mesa structure prepared by using a mask metal as an overlay mark and utilizing micro-nano processing technology provided in this embodiment.

[0074] Step S140: preparing a protective layer on the surface of the epitaxial layer.

[0075] In this embodiment, the epitaxial surface protection layer is a soluble solid material, and the solid material is photoresist or metal.

[0076] It can be understood that the epitaxial protection layer is made of a material that can absorb the force generated during the laser etching process and can be effectively removed without contaminating the epitaxial layer after the laser etching is completed, such as photoresist.

[0077] Step S150: using laser to etch the substrate below the metal pattern until it reaches the metal pattern layer.

[0078] In this embodiment, the laser wavelength is between 200nm-400nm, and the power is between 10mW-

[0079] Specifically, a suitable laser wavelength and power are selected according to the substrate thickness and etching depth.

[0080] See also Figure 6 , which is a schematic diagram of the device structure obtained after laser etching the sapphire substrate corresponding to the metal mask provided in this embodiment.

[0081] Step S160: etching the metal pattern layer with an acid solution and removing the epitaxial protection layer to obtain the optical waveguide structure (30).

[0082] In this embodiment, the acidic solution is a solution that can dissolve the patterned metal material, such as sulfuric acid, nitric acid, hydrochloric acid, and a mixed solution thereof.

[0083] See also Figure 7 FIG. 1 is a schematic diagram of a device structure of an optical waveguide structure having a flat and smooth surface obtained after etching the metal mask with an acidic solution provided in this embodiment.

[0084] Step S170: Obtain a homogeneous integrated device according to micro-nano processing technology.

[0085] See also Figure 8 , is a schematic diagram of the structure of a homogeneous integrated device prepared using micro-nano processing technology provided in this embodiment.

[0086] The preparation method of the homogeneous integrated device provided in the above-mentioned embodiment 2 of the present application first releases material stress during the epitaxy process and improves material quality; secondly, the epitaxial structure is protected from laser damage during the laser etching process; thirdly, after laser etching, an acid solution can be used to etch to obtain a flat and smooth surface of the optical waveguide structure. The laser etching method adopted in the present application has a much higher rate of etching sapphire than the traditional etching method, and can etch a specific size area at a specific location. Therefore, the method can efficiently prepare an optical waveguide structure, and because the optical waveguide structure is composed of air with a low dielectric constant and a nitride homogeneous material with a high dielectric constant, its total reflection angle is larger and the optical coupling effect is higher.

[0087] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0088] The above are only preferred embodiments of the present application, and only specifically describe the technical principles of the present application. These descriptions are only for explaining the principles of the present application and cannot be interpreted as limiting the scope of protection of the present application in any way. Based on the explanation here, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application, and other specific implementation methods of the present application that can be associated with the technicians in this field without creative work, should be included in the scope of protection of the present application.

Claims

1. A homogeneous integrated device, characterized in that: include: A substrate (1), wherein a patterned metal protective sacrificial layer is formed on the substrate (1); A non-specific doping layer (2), located on the patterned metal protective sacrificial layer and away from a side of the substrate (1); An n-type doping layer (3) located on the non-specific doping layer (2) and away from a side of the substrate (1); A multi-quantum well layer (5), located on the n-type doped layer (3) and away from a side of the substrate (1); A p-type doped layer (6) located on the multi-quantum well layer (5) and on a side away from the substrate (1); An n-type contact electrode (4), located on a side of the n-type doped layer (3) and away from the substrate (1); A p-type contact electrode (7), located on the p-type doped layer (6) and on a side away from the substrate (1); The non-specific doping layer (2) and the n-type doping layer (3) form an optical waveguide structure (30); the side surface of the substrate (1) at a corresponding position of the optical waveguide structure (30) has a laser-etched surface feature; the upper and lower air / nitride interfaces of the optical waveguide structure (30) are smooth and flat; and the optical waveguide structure (30) is an air / nitride / air structure.

2. The homogeneous integrated device according to claim 1, characterized in that: The thickness of the patterned metal protective sacrificial layer is between 10nm and 4000nm. The patterned metal protective sacrificial layer is a high temperature resistant metal, and the melting point of the high temperature resistant metal is greater than 1300°C.

3. The homogeneous integrated device according to claim 2, characterized in that: The high temperature resistant metal includes Ti, V or W.

4. The homogeneous integrated device according to claim 1, characterized in that: The non-specific doping layer (2), the n-type doping layer (3) and the p-type doping layer (6) are all made of one of the materials InN, InGaN, AlN, InAlN or InAlGaN.

5. The homogeneous integrated device according to claim 1, characterized in that: The multi-quantum well layer (5) is an InGaN / GaN or Al x Ga 1-x N / AlyGa 1-y multi-quantum well layer of N, where 0 < x < 1 and 0 < y < 1; or; the multi-quantum well layer is at least a combination of two of InN, InGaN, AlN, InAlN, and InAlGaN.

6. The homogeneous integrated device according to claim 5, characterized in that: The number of well layer / barrier layer periods of the multi-quantum well layer (5) is m; wherein 5≤m≤20, and m is an integer; the well layer thickness of the multi-quantum well layer (5) is 0.5-5nm, and the barrier layer thickness of the multi-quantum well layer (5) is 5-15nm.

7. The homogeneous integrated device according to claim 1, characterized in that: The n-type contact electrode (4) is Ti / Al / Ti / Au, wherein the thickness of Al is 0.5-5 um.

8. The homogeneous integrated device according to claim 1, characterized in that: The p-type contact electrode (7) is Ni / Al / Ti / Au.

9. The homogeneous integrated device according to claim 1, characterized in that: The optical waveguide structure (30) comprises a non-specific doping layer (2) with a thickness between 10 nm and 5000 nm and an n-type doping layer (3) with a thickness between 10 nm and 5000 nm.

10. A method for preparing a homogeneous integrated device according to any one of claims 1 to 9, characterized in that: The steps include: Preparing the patterned metal protective sacrificial layer on the substrate (1); According to the structure of the homogeneous integrated device, the non-specific doping layer (2), the n-type doping layer (3), the multi-quantum well layer (5), the p-type doping layer (6), the n-type contact electrode (4) and the p-type contact electrode (7) are epitaxially grown on the patterned metal protective sacrificial layer; Preparing a device channel and a mesa structure on the epitaxial layer according to the structure of the homogeneous integrated device; preparing a protective layer on the surface of the epitaxial layer; Etching the substrate below the metal pattern using a laser to etch into the metal pattern layer; Etching the metal pattern layer using an acid solution and removing the epitaxial protective layer to obtain the optical waveguide structure (30); Homogeneous integrated devices are obtained based on micro-nano processing technology.

11. The method for preparing a homogeneous integrated device according to claim 10, characterized in that: The laser wavelength is between 200nm and 400nm, and the power is between 10mW and 400mW.

12. The method for preparing a homogeneous integrated device according to claim 10, characterized in that: The epitaxial surface protection layer is a soluble solid material, and the solid material is a photoresist or a metal.

13. The method for preparing a homogeneous integrated device according to claim 10, characterized in that: The acidic solution is a solution that can dissolve the patterned metal material, and the solution includes sulfuric acid, nitric acid, hydrochloric acid, or a mixed solution thereof.

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