Semiconductor Modules

Abstract

A semiconductor module comprises: a base plate (50) formed into a plate shape; a terminal member (80); an electronic component joined to one surface of the base plate (50); and a molding resin (70) which seals the base plate (50), the terminal member (80) and the electronic component, wherein the base plate (50) and the terminal member (80) are conductive members and are arranged on the same plane with a gap therebetween, each of the base plate (50) and the terminal member (80) having a main body and a terminal portion exposed to the outside from the molding resin (70), and an extension portion (53) of the base plate (50) in the main body (52) includes a through hole (60), and the extension portion is a portion extending toward and connected to the terminal portion (51).

Description

Technical Field

[0001] The present application relates to a semiconductor module. Background Art

[0002] Semiconductor modules with built-in electronic components such as semiconductor switching elements can be used in devices that perform power conversion. A semiconductor module is a module in which a semiconductor switching element is mounted on a bottom plate of a conductive member, and the electrode pads provided on the upper surface of a plurality of semiconductor switching elements are connected by jumper wires or bonding wires and then sealed by molding resin. Multiple terminal parts such as positive and negative power terminals, output terminals facing the load, and control terminals for controlling the semiconductor switching elements are arranged on the side of the outer periphery of the molding resin. In addition to multiple semiconductor switching elements, a shunt resistor for current detection is also installed inside the semiconductor module.

[0003] As a terminal structure exposed to the outside from the mold resin of a semiconductor module, there is disclosed a structure in which a part of a base plate on which a semiconductor switching element is mounted is directly pulled out to the outside as a terminal portion (for example, see Patent Document 1).

[0004] [Prior art literature]

[0005] [Patent Document]

[0006] Patent Document 1: Japanese Patent Application Publication No. 2003-324176 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] In the terminal structure of the semiconductor module in the above-mentioned patent document 1, when the front end of the terminal part is preheated in the subsequent process of installing the semiconductor module in the device, heat will dissipate from the terminal part to the side of the base plate on which the semiconductor switching element is installed, thereby causing a technical problem that the solderability of the terminal part deteriorates.

[0009] Therefore, an object of the present application is to obtain a semiconductor module that suppresses heat conduction from a terminal portion to a main body portion of a base plate to which an electronic component is bonded.

[0010] Technical solutions adopted to solve technical problems

[0011] The semiconductor module disclosed in the present application includes: a base plate, which is formed in a plate shape; a terminal member; an electronic component, which is joined to one surface of the base plate; and a molding resin, which seals the base plate, the terminal member and the electronic component. The base plate and the terminal member are conductive members, which are arranged on the same plane with a gap between them. Each of the base plate and the terminal member has a main body and a terminal portion exposed to the outside from the molding resin. The extension portion of the base plate in the main body includes a through hole, and the extension portion is a portion extending toward the terminal portion and connected to the terminal portion.

[0012] Effects of the Invention

[0013] According to the semiconductor module disclosed in the present application, since the base plate having electronic components joined thereto has a main body portion and a terminal portion exposed to the outside from the molded resin, an extended portion in the main body portion includes a through hole, and the extended portion is a portion extending toward and connected to the terminal portion. Therefore, the cross-sectional area of ​​the base plate at the extended portion is reduced, thereby obtaining a semiconductor module in which heat conduction from the terminal portion to the main body portion of the base plate is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a diagram showing a circuit configuration of a device including the semiconductor module according to the first embodiment.

[0015] Figure 2 This is a plan view of the semiconductor module according to the first embodiment.

[0016] Figure 3 This is a side view of the semiconductor module according to the first embodiment.

[0017] Figure 4 This is a top view of another semiconductor module according to the first embodiment.

[0018] Figure 5 This is a plan view of the main parts of another semiconductor module according to the first embodiment.

[0019] Figure 6 It is a top view of the semiconductor module according to the second embodiment.

[0020] Figure 7 This is a top view of another semiconductor module according to the second embodiment.

[0021] Figure 8 This is a plan view of a semiconductor module according to a third embodiment.

[0022] Fig. 9 This is a plan view of the main parts of the semiconductor module according to the third embodiment. DETAILED DESCRIPTION

[0023] Hereinafter, a semiconductor module according to an embodiment of the present application will be described with reference to the accompanying drawings. In addition, in each figure, the same or corresponding components and parts are denoted by the same reference numerals for description.

[0024] Implementation Method 1

[0025] Figure 1 2 is a diagram showing a circuit configuration of an entire system of an electric power steering device 200 including the semiconductor module according to the first embodiment. Figure 2 is a top view showing the internal structure of the semiconductor module 100. Figure 3 is a side view of the semiconductor module 100, Figure 4 is a top view of another semiconductor module 100 according to the first embodiment. Figure 5 1 is a plan view of the main parts of another semiconductor module 100 according to the first embodiment. Figure 2 2 is a diagram showing the molding resin 70 removed, and the double-dashed line is the outer shape of the molding resin 70. Figure 2 as well as Figure 4 In FIG. 1 , an outer frame 90 provided when manufacturing the semiconductor module 100 is indicated by a dotted line. Figure 3 is from Figure 2 The semiconductor module 100 is a side view viewed in the direction of arrow A. The semiconductor module 100 is used in a device for converting power, etc., and has a plurality of semiconductor switching elements 41, 42, 44 for converting power built therein.

[0026] <Electric power steering device 200>

[0027] As an example of a device including a semiconductor module, an electric power steering device 200 is described. The electric power steering device 200 is a device that converts the electric power supplied from the battery 9 and outputs the converted electric power to the motor 2. Figure 1 The figure shows a control unit 1, a motor 2, a battery 9, an ignition switch 10, and sensors such as a rotation sensor 6. The motor 2 is a brushless motor composed of three-phase windings (U phase, V phase, W phase). The rotation sensor 6 is arranged near the motor 2, detects the rotation angle of the motor 2 and outputs it to the control circuit 3 included in the control unit 1. In addition, the sensor 8 includes a torque sensor for detecting the steering wheel operation force and a vehicle speed sensor, etc., which outputs electrical signals corresponding to the physical quantities detected by each sensor to the control circuit 3.

[0028] The control unit 1 is composed of a control circuit 3 including a CPU 30, an inverter circuit 4 for supplying current to the winding of the motor 2, a power supply relay 5, and other electrical components. The control unit 1 is connected to a battery 9 and an ignition switch 10, and power is supplied to the control unit 1 via the battery 9 and the ignition switch 10. The control unit 1 is connected to a rotation sensor 6 and a sensor 8, and the electrical signals output by these sensors are input to the control circuit 3 included in the control unit 1.

[0029] The control circuit 3 is composed of a CPU 30, a drive circuit 31, an input circuit 32, and a power supply circuit 33 connected to these circuits. The input circuit 32 is input with output signals from the rotation sensor 6 and the sensor 8, and data such as the rotation angle information of the motor 2 obtained from these output signals is output to the CPU 30. The CPU 30 calculates the current value for rotating the motor 2 based on the input data. The CPU 30 outputs a control signal matching the result calculated by the drive circuit 31 to the inverter circuit 4. In addition, the CPU 30 is input with a current detection signal detected by the inverter circuit 4 via the input circuit 32, and the CPU 30 performs feedback control of the inverter circuit 4 based on the above current detection signal.

[0030] The inverter circuit 4 is composed of a bridge circuit corresponding to each of the three-phase windings of the U phase, V phase and W phase included in the motor 2. All the corresponding bridge circuits are the same circuits, so the bridge circuit 4a of one phase (U phase) is described. The bridge circuit 4a includes three semiconductor switching elements 41, 42, and 44. The semiconductor switching element 41 on the high potential side and the semiconductor switching element 42 on the low potential side are connected in series. One side of the semiconductor switching element 44 is connected to the intermediate connection portion between the semiconductor switching element 41 and the semiconductor switching element 42, and the other side of the semiconductor switching element 44 is connected to the coil of the U phase of the motor 2. The semiconductor switching element 44 has a relay function that can connect or disconnect the coil of the U phase and the inverter circuit 4.

[0031] A shunt resistor 43 for detecting current is connected to the downstream side of the semiconductor switch element 42 on the low potential side. The potential difference between the two ends of the shunt resistor 43 is detected and converted into a current value. In order to detect the potential difference between the two ends of the shunt resistor 43, terminals 48 are provided at both ends of the shunt resistor 43 of the inverter circuit 4. The monitoring signals of various locations of the inverter circuit 4 are input to the CPU 30 via the input circuit 32. The driving of the semiconductor switch elements 41, 42, and 44 is controlled based on the signal output from the drive circuit 31 according to the instruction of the CPU 30.

[0032] The power relay 5 is arranged upstream of the inverter circuit 4. The power relay 5 includes two semiconductor switch elements 5a and 5b connected in series. The power relay 5 has a relay function that can supply or cut off the power to the inverter circuit 4. A smoothing capacitor 7 is connected in parallel between the power supplied to the inverter circuit 4 and the ground.

[0033] When the control unit 1 is constituted by a semiconductor module having a plurality of semiconductor switching elements built therein, various types are conceivable, such as a semiconductor module having a bridge circuit constituting the inverter circuit 4 built therein, a semiconductor module having a power supply relay 5 built therein, or a semiconductor module having a circuit in which a shunt resistor and a part of the semiconductor switching elements are omitted.

[0034] <Semiconductor module 100>

[0035] The case where the single-phase bridge circuit 4a is formed as a semiconductor module 100 will be described. Figure 2 The figure includes a base plate 50 formed in a plate shape, a terminal member 80, an electronic component joined to one surface of the base plate 50, and a molded resin 70 that seals the base plate 50, the terminal member 80, and the electronic component. The base plate 50 and the terminal member 80 are conductive members made of the same material such as copper or copper alloy. The base plate 50 and the terminal member 80 are arranged on the same plane with a gap. Here, five base plates 50 and four terminal members 80 are provided. The electronic components in the semiconductor module 100 are semiconductor switch elements 41, 42, 44 and a separation resistor 43. The semiconductor switch elements 41, 42, 44 here are FETs (Field Effect Transistors). In addition, the electronic components joined to the base plate 50 are not limited to these.

[0036] The semiconductor switch element 41 on the high potential side is connected to one surface of the bottom plate 50a through the drain portion of the semiconductor switch element 41. The semiconductor switch element 42 on the low potential side is connected to one surface of the bottom plate 50c through the drain portion of the semiconductor switch element 42. The semiconductor switch element 44 is connected to one surface of the bottom plate 50b through the drain portion of the semiconductor switch element 44. The shunt resistor 43 is connected across one surface of the bottom plate 50d and the bottom plate 50e. The semiconductor switch elements 41, 42, 44 and the bottom plate 50 are connected by a bridge-shaped jumper 45 formed of a copper plate, for example. The jumper 45a connects the source portion of the semiconductor switch element 41, the source portion of the semiconductor switch element 44 and the bottom plate 50c. The jumper 45b connects the source portion of the semiconductor switch element 42 and the bottom plate 50d.

[0037] Each of the base plates 50 includes a main body portion 52 to which electronic components are bonded and a terminal portion 51 exposed to the outside from the side of the molded resin 70. The direction in which the terminal portion 51 is exposed is a direction parallel to the same plane in which the base plates 50 are provided. The terminal portion 51 extends from the side of the molded resin 70. The terminal portion 51a of the base plate 50a is connected to the battery 9 as a power source. The terminal portion 51e of the base plate 50e is connected to the grounding member. The terminal portion 51b of the base plate 50b is connected to the U phase of the motor 2 as a load, and the electric power converted from the terminal portion 51b is output to the U phase of the motor 2. The terminal portions 51a, 51b, and 51e are power supply terminals for large currents with large current amounts. The terminal portions 51a and 51e are connected in Figure 2 The terminal portion 51b is arranged on the right side of the semiconductor module 100. Figure 2 The semiconductor module 100 is provided so as to extend upward.

[0038] The terminal extending to the outside from the side surface of the molded resin 70 opposite to the side surface of the molded resin 70 from which the terminal portion 51b extends is a control terminal. The direction in which the control terminal is exposed is a direction parallel to the same plane on which the base plate 50 is provided. The base plate 50d and the base plate 50e include a terminal portion 51d and a terminal portion 51e1 for detecting the voltage at both ends of the shunt resistor 43. The terminal portion 51e and the terminal portion 51e1 are the potentials of the grounding member. The base plate 50c includes a terminal portion 51c connected to the connection point of the semiconductor switch elements 41, 42, 44. The terminal portion 51c is a terminal for monitoring the potential of the connection point of the semiconductor switch elements 41, 42, 44.

[0039] Each of the terminal members 80 formed in a plate shape includes: a main body portion 82 to which the bonding wire 46 or the bonding wire 47 is connected; and a terminal portion 81 exposed to the outside from the side of the molded resin 70. The terminal member 80 is a terminal that has a relatively small amount of current and is used in the control of the semiconductor module 100. The terminal member 80 is Figure 2 The terminal members 80a, 80b, 80c are arranged on the lower side of the semiconductor module 100. The terminal members 80a, 80b, 80c are gate control terminals connected to the gate portions included in each of the semiconductor switch elements 41, 42, 44. The terminal members 80a, 80b, 80c and the gate portions are connected by bonding wires 46 provided by a wire bonding process.

[0040] The wire bonding is performed starting from the gate portion of each of the semiconductor switch elements 41, 42, 44 and ending at the terminal member 80 side. Therefore, the bonding wire 46 can be cut without damaging the semiconductor switch elements 41, 42, 44 in the wire bonding process. The main body 82d of the terminal member 80d and the main body 52b of the bottom plate 50b are connected by the bonding wire 47. The terminal member 80d is a terminal for monitoring the potential of the terminal portion 51b output to the motor 2.

[0041] The molded resin 70 seals the base plate 50, the terminal member 80, the semiconductor switch elements 41, 42, 44 and the shunt resistor 43, the jumper wire 45, and the bonding wires 46 and 47 as electronic components. The outer shape of the molded resin 70 is formed into a rectangular plate shape having a plate surface parallel to the same plane where the base plate 50 is provided. The outer shape of the molded resin 70 is not limited to a rectangular plate shape, and may be, for example, a shape that matches the shape of the portion where the semiconductor module 100 is provided. The other surface of the base plate 50 may also be exposed from the molded resin 70 in order to facilitate cooling of the base plate 50.

[0042] The semiconductor module 100 is manufactured in a state where the outer frame 90 is connected to the base plate 50 and the terminal member 80. The manufacturing method of the semiconductor module 100 includes: a process of hollowing out a plate-shaped conductive member to form a member in which the outer frame 90 is connected to the base plate 50 and the terminal member 80; a process of joining the semiconductor switch elements 41, 42, 44 and the shunt resistor 43 as electronic components to the base plate 50; a process of connecting the semiconductor switch elements 41, 42, 44 to the base plate 50 through the jumper wire 45; a process of connecting the semiconductor switch elements 41, 42, 44 and the base plate 50b to the terminal member 80 through the bonding wire 46, 47; a process of sealing the base plate 50, the terminal member 80, the semiconductor switch elements 41, 42, 44, the shunt resistor 43, the jumper wire 45 and the bonding wire 46, 47 with the molding resin 70; and a process of separating the outer frame 90 from the terminal parts 51, 81.

[0043] The semiconductor module 100 is completed by cutting off the outer frame 90 and the terminal portions 51 and 81. Since each of the base plate 50 and the terminal member 80 includes the terminal portions 51 and 81 exposed to the outside from the side of the molded resin 70, the configuration of the base plate 50 and the terminal member 80 can be stabilized when manufacturing the semiconductor module 100 without using other fixing members such as a jig. Since the configuration of the base plate 50 and the terminal member 80 is stable, the productivity of the semiconductor module 100 can be improved.

[0044] <Through hole 60>

[0045] The through hole 60, which is the main part of the present application, is described. The bottom plate 50c includes a through hole 60 formed in a rectangular shape at the extension portion 53 in the main body portion 52c, and the extension portion 53 is a portion extending toward the terminal portion 51c and connected to the terminal portion 51c. The extension portion 53 of the main body portion 52c of the bottom plate 50c extends in the direction in which the terminal portion 51c extends and is connected to the terminal portion 51c.

[0046] The reason for providing the through hole 60 is explained. At the terminal portion included in the semiconductor module, when the front end of the terminal portion is preheated in the subsequent process of installing the semiconductor module in the device, heat will dissipate from the terminal portion to the side of the base plate on which the semiconductor switching element is installed, and the solderability of the terminal portion may sometimes deteriorate. The front end portion of the control terminal is set to be thinner due to the small current, and it does not need to be as thick as the power terminal even at the part pulled out from the molding resin. Therefore, it is possible to adopt a structure in which the thinned control terminal is extended from the base plate to hinder the flow of heat in the layout of the semiconductor module. However, if the thinned control terminal is extended from the base plate, the rigidity of the control terminal decreases. In addition, the thinner control terminal extends from the outer frame to the base plate to form a cantilever shape, so the control terminal is easy to bend.

[0047] As a result of the bending of the control terminal, the portion of the base plate from which the control terminal extends is also deformed. If the base plate is deformed, there is a step difference between the base plate and another base plate disposed around it. The appearance of the semiconductor module is deformed due to the step difference, and thus the semiconductor module becomes a defective product. Therefore, in order to suppress the bending and ensure the rigidity of the control terminal, the control terminal is provided with an extension portion 53 extending toward the terminal portion 51c. In addition, in order to suppress the heat conduction from the terminal portion 51c to the main body portion 52c of the base plate 50c, a through hole 60 formed in a rectangular shape that reduces the cross-sectional area of ​​the base plate 50c is provided at the extension portion 53.

[0048] The through hole 60 is formed in the extension portion 53 of the main body 52c of the bottom plate 50c inside the molded resin 70. By providing the through hole 60 inside the molded resin 70, the bonding surface between the bottom plate 50c and the molded resin 70 can be increased. By increasing the bonding surface between the bottom plate 50c and the molded resin 70, the separation of the bottom plate 50c and the molded resin 70 can be suppressed compared to the case where there is no through hole 60. In addition, a gap can be formed between the front end portion of the terminal portion 51c and the extension portion 53 (at Figure 2 By cutting into the portion (enclosed by a dotted line) to cut out the outer frame 90 to be cut in the subsequent process, the terminal portion 51c can be thinned without directly extending from the extended portion 53, thereby effectively hindering heat conduction.

[0049] The long side of the through hole 60 is parallel to the direction in which the extension portion 53 of the main body portion 52c of the bottom plate 50c and the terminal portion 51c extend. By configuring in the above manner, since the through hole 60 is formed to be elongated along the extension portion 53, the width of the through hole 60 and the extension portion 53 can be reduced. In addition, since the width of the through hole 60 and the extension portion 53 is reduced, the semiconductor module 100 can be miniaturized.

[0050] The width of each of the extension portions 53 of the main body portion 52c of the bottom plate 50c on both sides of the long side of the through hole 60 is greater than the width of the front end portion of the terminal portion 51c. By adopting the above structure, since the width of each of the extension portions 53 on both sides of the long side of the through hole 60 is ensured to be greater than the width of the front end portion of the terminal portion 51c, the extension portions 53 on both sides of the long side of the through hole 60 will not hinder the current flowing to the front end portion of the terminal portion 51c.

[0051] The widths of the extension portion 53 of the main body 52c of the bottom plate 50c on both sides of the long side of the through hole 60 are the same. With the above structure, since the heat conduction in the extension portion 53 on both sides of the long side of the through hole 60 is uniform, the heat conduction from the terminal portion 51c to the main body 52c of the bottom plate 50c can be effectively suppressed.

[0052] In this embodiment, the through hole 60 formed in the extension portion 53 of the bottom plate 50c is as follows: Figure 2 As shown in FIG. 1 , the through hole 60 not only extends in the extension portion 53, but also extends in the portion of the main body 52c of the bottom plate 50c that is not bonded to the semiconductor switch element 42. By extending the through hole 60, the heat conduction from the terminal portion 51c to the main body 52c of the bottom plate 50c can be further suppressed. The location where the through hole 60 is provided is not limited to this, and may also be as follows: Figure 4 The structure shown is that the through hole 60 is provided in only the extended portion 53 of the bottom plate 50c.

[0053] In this embodiment, the extension portion 53 of the bottom plate 50c is as follows: Figure 2 As shown in FIG. 5A , the extension portion 53 extends along the extension direction of the terminal portion 51c and is connected to the terminal portion 51c, but the configuration of the extension portion 53 is not limited thereto. Figure 5 As shown, it can also be along a direction different from the extending direction of the terminal portion 51c ( Figure 5 In addition, the shape of the through hole 60 is not limited to a rectangular shape, and the extension portion 53 may extend in a direction different from the extension direction of the terminal portion 51c. Figure 5In addition, although the example of providing the extension portion 53 and the through hole 60 in the portion connected to the control terminal of the main body 52 is shown, it is not limited to this, and the extension portion 53 and the through hole 60 may also be provided in the portion connected to the power terminal of the main body 52.

[0054] As described above, in the semiconductor module 100 of the first embodiment, since the base plate 50c to which the semiconductor switch element 42 is bonded has the main body 52c and the terminal portion 51c exposed to the outside from the mold resin 70, the extension portion 53 in the main body 52c includes the through hole 60, and the extension portion 53 is a portion extending toward the terminal portion 51c and connected to the terminal portion 51c, so that the cross-sectional area of ​​the base plate 50c in the extension portion 53 is reduced, thereby suppressing heat conduction from the terminal portion 51c to the main body 52c of the base plate 50c. In the case where the through hole 60 is formed in the extension portion 53 of the main body 52c of the base plate 50c inside the mold resin 70, the bonding surface between the base plate 50c and the mold resin 70 can be increased, and thus, the separation of the base plate 50c and the mold resin 70 can be suppressed compared to the case where the through hole 60 is not formed.

[0055] When the extension portion 53 of the main body portion 52c of the bottom plate 50c extends along the extension direction of the terminal portion 51c and is connected to the terminal portion 51c, the width of the extension portion 53 can be reduced, so the semiconductor module 100 can be miniaturized. When the long side of the through hole 60 formed in a rectangular shape is parallel to the extension direction of the extension portion 53 of the bottom plate 50c and the terminal portion 51c, since the through hole 60 is formed to be elongated along the extension portion 53, the width of the through hole 60 and the extension portion 53 can be reduced. In addition, since the width of the through hole 60 and the extension portion 53 is reduced, the semiconductor module 100 can be miniaturized.

[0056] When the widths of both sides of the long side of the through hole 60 in the extension portion 53 of the bottom plate 50c are larger than the width of the front end portion of the terminal portion 51c, the current flowing to the front end portion of the terminal portion 51c is not blocked by the extension portions 53 on both sides of the long side of the through hole 60, and thus the heating of the extension portion caused by the current can be suppressed. When the widths of both sides of the long side of the through hole 60 in the extension portion 53 of the bottom plate 50c are the same width, the heat conduction in the extension portions 53 on both sides of the long side of the through hole 60 is uniform, and thus the heat conduction from the terminal portion 51c to the main body portion 52c of the bottom plate 50c can be effectively suppressed.

[0057] Implementation Method 2

[0058] A semiconductor module 100 according to the second embodiment will be described. Figure 6 is a top view of a semiconductor module 100 according to Embodiment 2. Figure 7FIG. 1 is a plan view of another semiconductor module 100 according to the second embodiment. Figure 6 The figure shows the mold resin 70 without being removed, and the two-dot chain line indicates the outer shape of the mold resin 70. The semiconductor module 100 of the second embodiment has a structure different from that of the first embodiment in the arrangement of the through holes 60.

[0059] The through hole 60 is formed in the extension portion 53 of the main body 52c of the bottom plate 50c exposed from the molded resin 70. The extension portion 53 of the main body 52c of the bottom plate 50c extends along the extension direction of the terminal portion 51c and is connected to the terminal portion 51c. Since the through hole 60 is configured to be exposed from the molded resin 70, the heat-prone portion that suppresses heat conduction from the terminal portion 51c to the main body 52c of the bottom plate 50c can be kept away from the semiconductor switch elements 4, 42, 44 and the shunt resistor 43. Since the heat-prone portion can be kept away from the semiconductor switch elements 41, 42, 44 and the shunt resistor 43, it is possible to suppress interference with heat dissipation of the semiconductor switch elements 41, 42, 44 and the shunt resistor 43 as heat generating bodies.

[0060] In the present embodiment, the through hole 60 is arranged in only the extended portion 53 of the bottom plate 50c exposed from the mold resin 70, so that the semiconductor switch element 42 joined to the bottom plate 50c can be arranged on the center side of the semiconductor module 100. By arranging the semiconductor switch element 42 on the center side of the semiconductor module 100, the heat dissipation of the semiconductor switch element 42 can be improved. In addition, the layout of the electronic components in the semiconductor module 100 can be improved. In addition, the semiconductor module 100 can be miniaturized.

[0061] In this embodiment, although the through hole 60 is arranged in only the extended portion 53 of the bottom plate 50c exposed from the molded resin 70, the arrangement of the through hole 60 is not limited to this. Figure 7 As shown, the through hole 60 is additionally provided inside the molded resin 70. By providing the through hole 60 inside the molded resin 70, the separation of the bottom plate 50c and the molded resin 70 can be suppressed. Here, in order to suppress the heat generation of the extension portions 53 on both sides of the through hole 60, the width of the through hole 60 provided inside the molded resin 70 is reduced. Figure 7 In the embodiment, the through holes 60 provided both inside and outside the mold resin 70 are integrated into one through hole 60 , but the through holes 60 may be provided both inside and outside the mold resin 70 separately.

[0062] As described above, in the semiconductor module 100 of the second embodiment, since the through hole 60 is formed in the extended portion 53 of the main body portion 52c of the base plate 50c exposed from the molding resin 70, the heat-prone portion that suppresses heat conduction from the terminal portion 51c to the main body portion 52c of the base plate 50c can be kept away from the semiconductor switch elements 41, 42, 44 and the shunt resistor 43, thereby preventing the semiconductor switch elements 41, 42, 44 and the shunt resistor 43, which are heat-generating bodies, from being hindered in heat dissipation.

[0063] Implementation 3

[0064] A semiconductor module 100 according to a third embodiment will be described. Figure 8 is a top view of a semiconductor module 100 according to Embodiment 3. Fig. 9 1 is a plan view of a main part of the semiconductor module 100 . Figure 8 The figure shows the mold resin 70 without being removed, and the two-dot chain line indicates the outer shape of the mold resin 70. The semiconductor module 100 of the third embodiment has a structure different from that of the first embodiment in the arrangement of the through holes 60.

[0065] The extension portion 53 of the main body 52c of the bottom plate 50c extends along the direction in which the terminal portion 51c extends and is connected to the terminal portion 51c. The long side of the through hole 60 formed in a rectangular shape is parallel to the extension portion 53 of the main body 52c of the bottom plate 50c and the direction in which the terminal portion 51c extends. The widths of the two sides of the long side of the through hole 60 in the extension portion 53 of the main body 52c of the bottom plate 50c are different in size, and the sum of the widths of the two sides of the long side of the through hole 60 is greater than the width of the front end portion of the terminal portion 51c. Fig. 9 This is a diagram showing an enlarged view of the extending portion 53 and the terminal portion 51c. Fig. 9 , the widths of the two sides of the long side of the through hole 60 are respectively set to D1 and D2. The width of the front end portion of the terminal portion 51c is set to D3. The through hole 60 is arranged in the extension portion 53 in such a manner that the relationship of the above widths is (D1+D2)≥D3. By adopting the above structure, since the sum of the widths of the extension portions 53 on both sides of the long side of the through hole 60 is ensured to be greater than the width of the front end portion of the terminal portion 51c, the extension portions 53 on both sides of the long side of the through hole 60 will not hinder the current flowing to the front end portion of the terminal portion 51c.

[0066] Since the widths of the extensions 53 on both sides of the long side of the through hole 60 are different, the extensions 53 having a locally reduced width can be provided, thereby providing a portion that locally suppresses heat conduction from the terminal portion 51c to the main body portion 52c of the bottom plate 50c. In addition, since the width D1 of the extension 53 at a position closer to the semiconductor switch element 42 is larger than the width D2 of the extension 53 at a position farther from the semiconductor switch element 42, the portion that is prone to heat and suppresses heat conduction from the terminal portion 51c to the main body portion 52c of the bottom plate 50c can be made away from the semiconductor switch element 42, thereby preventing the semiconductor switch element 42, which is a heat generating element, from being hindered from dissipating heat.

[0067] As described above, in the semiconductor module 100 of embodiment 3, the widths on both sides of the long sides of the through hole 60 in the extended portion 53 of the base plate 50c are different in size, and the sum of the widths on both sides of the long sides of the through hole 60 is greater than the width of the front end portion of the terminal portion 51c. Therefore, the current flowing to the front end portion of the terminal portion 51c will not be hindered by the extended portions 53 on both sides of the long sides of the through hole 60, thereby suppressing the heat in the extended portion 53 caused by the current.

[0068] In addition, the present application describes various illustrative embodiments and examples, but the various features, methods, and functions described in one or more embodiments are not limited to application to specific embodiments and can be applied to the embodiments alone or in various combinations.

[0069] Therefore, numerous modifications not shown are contemplated within the technical scope disclosed in the present specification, including, for example, modifications, additions, or omissions of at least one component, and also including extraction of at least one component and combination with components of other embodiments.

[0070] (Explanation of symbols)

[0071] 1 control unit; 2 motor; 3 control circuit; 4 inverter circuit; 4a bridge circuit; 5 power relay; 5a semiconductor switch element; 5b semiconductor switch element; 6 rotation sensor; 7 capacitor; 8 sensor; 9 battery; 10 ignition switch; 30 CPU; 31 drive circuit; 32 input circuit; 33 power circuit; 41 semiconductor switch element; 42 semiconductor switch element; 43 shunt resistor; 44 semiconductor switch element; 45 jumper wire; 46 bonding wire; 47 bonding wire; 48 terminal; 50 bottom plate; 51 terminal part; 52 main body; 53 extension part; 60 through hole; 70 mold resin; 80 terminal member; 81 terminal part; 82 main body; 90 outer frame; 100 semiconductor module; 200 electric power steering device

Claims

1. A semiconductor module, characterized in that: include: A bottom plate, the bottom plate being formed in a plate shape; Terminal member; an electronic component, the electronic component being bonded to one surface of the base plate; as well as a molding resin that seals the base plate, the terminal member, and the electronic component, The bottom plate and the terminal member are conductive members and are arranged on the same plane with a gap therebetween. Each of the base plate and the terminal member has a main body portion and a terminal portion exposed to the outside from the molded resin, The extending portion of the bottom plate in the main body portion includes a through hole, and the extending portion is a portion extending toward the terminal portion and connected to the terminal portion. The extension portion of the main body of the bottom plate extends along the extending direction of the terminal portion and is connected to the terminal portion. The long sides of the rectangular through hole are parallel to the extending part of the main body of the bottom plate and the extending direction of the terminal part. The width of each of the two sides of the long side of the through hole in the extended portion of the main body portion of the bottom plate is greater than or equal to the width of the front end portion of the terminal portion.

2. The semiconductor module according to claim 1, wherein: The through hole is formed in an extended portion of the main body portion of the bottom plate inside the molded resin.

3. The semiconductor module according to claim 1, wherein: The through hole is formed in an extended portion of the main body portion of the bottom plate exposed from the molded resin.

4. The semiconductor module according to any one of claims 1 to 3, characterized in that The widths of both sides of the long side of the through hole in the extended portion of the main body of the bottom plate are the same.

5. A semiconductor module, characterized in that: include: A bottom plate, the bottom plate being formed in a plate shape; Terminal member; an electronic component, the electronic component being bonded to one surface of the base plate; as well as a molding resin that seals the base plate, the terminal member, and the electronic component, The bottom plate and the terminal member are conductive members and are arranged on the same plane with a gap therebetween. Each of the base plate and the terminal member has a main body portion and a terminal portion exposed to the outside from the molded resin, The extending portion of the bottom plate in the main body portion includes a through hole, and the extending portion is a portion extending toward the terminal portion and connected to the terminal portion. The extension portion of the main body of the bottom plate extends along the extending direction of the terminal portion and is connected to the terminal portion. The long sides of the rectangular through hole are parallel to the extending part of the main body of the bottom plate and the extending direction of the terminal part. In the extension portion of the main body of the bottom plate, the widths of the two sides of the long side of the through hole are different in size. The sum of the widths of both sides of the long side of the through hole is greater than or equal to the width of the front end portion of the terminal portion.

6. The semiconductor module according to claim 5, characterized in that The through hole is formed in an extended portion of the main body portion of the bottom plate inside the molded resin.

7. The semiconductor module according to claim 5, characterized in that The through hole is formed in an extended portion of the main body portion of the bottom plate exposed from the molded resin.

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