Method for manufacturing a semiconductor structure, semiconductor structure and semiconductor device

By forming a thick epitaxial layer and embedding isolation pillars in a single epitaxial process in a DMOS device, the problem of multiple process steps is solved, achieving efficient isolation and cost savings.

CN116344344BActive Publication Date: 2026-07-03GTA SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
GTA SEMICON CO LTD
Filing Date
2023-02-27
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

In the current technology for fabricating high-voltage DMOS devices, the epitaxial layer is relatively thick, and a single ion implantation cannot connect with the buried layer in the substrate. This results in the need for multiple epitaxial layer formations, trenching, and ion implantation, which is complex and costly.

Method used

A single epitaxial process is used to form an epitaxial layer of sufficient thickness on the substrate surface, and an isolation pillar is formed within the epitaxial layer. The isolation pillar penetrates the epitaxial layer along a second direction and contacts the buried layer. Adjacent isolation pillars and the buried layer form an isolation ring, simplifying the process flow.

Benefits of technology

This reduces the number of process steps required to form epitaxial layers and isolation pillars, saving costs and improving the yield of semiconductor devices.

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Abstract

The application relates to a semiconductor structure preparation method, a semiconductor structure and a semiconductor device. The semiconductor structure preparation method comprises the following steps: providing a substrate; forming a buried layer in the substrate; forming an epitaxial layer on the surface of the substrate by adopting a one-time epitaxial process; and forming a plurality of isolation columns which are arranged at intervals along a first direction in the epitaxial layer, the isolation columns penetrate the epitaxial layer along a second direction and are in contact with the buried layer, and adjacent two isolation columns and the buried layer form an isolation ring; wherein the second direction intersects the first direction. The one-time epitaxial process is adopted to form an epitaxial layer with sufficient thickness, the number of process times for forming the epitaxial layer is reduced, the epitaxial layer is formed at one time, therefore, the isolation columns do not need to be formed in steps, and the isolation columns do not need to be subjected to multiple ion implantations, the number of process times for forming the isolation columns is reduced, the isolation columns are in contact with the buried layer, adjacent two isolation columns and the buried layer form an isolation ring, the isolation effect is achieved, and the problem that a very large number of process steps are required for forming an isolation structure in a conventional process is solved.
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