Apparatus for processing a substrate and method for processing a substrate

Abstract

An apparatus and a method for processing a substrate are provided. The method for processing a substrate includes processing a substrate with a liquid and drying the liquid-processed substrate, and the liquid processing step includes a first liquid supplying step of supplying a first liquid to an upper surface of a rotating substrate and a second liquid supplying step of supplying a second liquid to the upper surface of the rotating substrate, and in the second liquid supplying step, a rotation speed of the substrate is adjusted so that the second liquid supplied on the substrate flows from a central region of the substrate to an edge region of the substrate.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean patent applications filed on December 24, 2021, with application number 10-2021-0186952, and on February 15, 2022, with application number 10-2022-0019253, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and a method for processing a substrate by supplying liquid to the substrate to process the substrate. Background Technology

[0004] Generally speaking, in order to manufacture semiconductor devices, various processes such as photolithography, etching, ion implantation, and deposition are performed.

[0005] During each stage of the manufacturing process, various foreign substances such as particles, organic contaminants, and metallic impurities are generated. These foreign substances can lead to defects in the substrate and act as factors directly affecting the performance and yield of semiconductor devices. Therefore, cleaning processes are performed before and after the semiconductor device manufacturing process to remove foreign substances remaining on the substrate.

[0006] The cleaning process includes steps such as using chemicals to remove foreign matter remaining on the substrate, using a cleaning solution such as deionized water (DIW) to remove chemicals remaining on the substrate, using an organic solvent with a surface tension lower than that of the cleaning solution to remove the cleaning solution remaining on the substrate, and drying the organic solvent remaining on the surface of the substrate.

[0007] The various liquids used in the cleaning process are fluid. Therefore, when transferring the substrate to perform the drying step, there is a problem that the liquid supplied to the substrate may deviate from the substrate. Furthermore, when excessive liquid is supplied to the substrate to remove particles remaining on it, the liquid supplied may also deviate from the substrate. This deviated liquid acts as a source of contamination, potentially contaminating subsequent substrates during substrate transfer or due to liquid residue remaining in the chamber. Summary of the Invention

[0008] The present invention aims to provide an apparatus and a method for effectively cleaning substrates.

[0009] The present invention also aims to provide an apparatus and a method for processing a substrate that minimizes the deviation of the liquid supplied to the substrate from the upper edge region of the substrate.

[0010] The purpose of this invention is not limited thereto, and other purposes not mentioned will be clearly understood by those skilled in the art from the following description.

[0011] An exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising treating the substrate with a liquid and drying the liquid-treated substrate. The liquid treatment step includes a first liquid supply step of supplying a first liquid to the upper surface of a rotating substrate, and a second liquid supply step of supplying a second liquid to the upper surface of the rotating substrate, wherein in the second liquid supply step, the rotation speed of the substrate is adjusted such that the second liquid supplied to the substrate flows only from the central region of the substrate to the edge region of the substrate.

[0012] According to an exemplary embodiment, the second liquid supply step includes a replacement step of replacing the first liquid supplied to the substrate with the second liquid, a compensation step of compensating for the amount of the second liquid supplied to the substrate, and a guiding step of guiding the second liquid supplied to the substrate to flow only to the edge region of the substrate by changing the rotation speed of the substrate within the guiding speed range.

[0013] According to an exemplary embodiment, the first cleaning chamber may include a support unit configured to support and rotate a substrate, a brush unit configured to clean the substrate supported by the support unit, and a liquid supply unit configured to supply processing liquid to the substrate supported by the support unit.

[0014] According to an exemplary embodiment, the guiding step includes a first guiding step of supplying a second liquid to a substrate rotating at a first guiding speed, and a second guiding step of stopping the supply of the second liquid to the substrate and rotating the substrate.

[0015] According to an exemplary embodiment, in the second guiding step, the rotational speed of the substrate is changed from a first guiding speed to a second guiding speed, and the first guiding speed is faster than the second guiding speed.

[0016] According to an exemplary embodiment, in the replacement step, a second liquid is supplied to a substrate rotating at a first speed, and in the compensation step, a second liquid is supplied to a substrate rotating at a second speed, wherein the first speed is faster than the second speed.

[0017] According to an exemplary implementation, the second speed is faster than the first guiding speed.

[0018] According to an exemplary embodiment, the second speed is the speed at which the second liquid supplied to the substrate flows to the rear surface of the substrate.

[0019] According to an exemplary embodiment, in the second liquid supply step, the second liquid flows only to the upper edge region of the substrate.

[0020] According to an exemplary embodiment, the drying step is performed using a supercritical fluid, and the second solution has a higher supercritical fluid solubility than the first solution.

[0021] According to an exemplary embodiment, the drying step is performed in the state of the rear edge region of the support substrate.

[0022] According to an exemplary embodiment, a liquid processing step is performed in a liquid processing chamber, a drying step is performed in a drying chamber, and in the liquid processing chamber, a transfer robot transfers the substrate on which the liquid processing has been performed to the drying chamber.

[0023] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a liquid processing chamber configured to liquid process the substrate by supplying liquid to the substrate, a drying chamber configured to remove liquid from the substrate, a transfer unit configured to transfer the substrate between the liquid processing chamber and the drying chamber, and a controller configured to control the liquid processing chamber, the drying chamber, and the transfer unit. The liquid processing chamber includes a housing having an internal space, a support unit configured to support and rotate the substrate in the internal space, and a liquid supply unit configured to supply liquid to an upper surface of the substrate placed on the support unit. The liquid supply unit includes a first liquid supply nozzle configured to supply a first liquid to the substrate and a second liquid supply nozzle configured to supply a second liquid to the substrate. The controller is configured to control the first liquid supply nozzle and the second liquid supply nozzle respectively, thereby supplying a first fluid to the substrate and supplying a second liquid to the substrate to which the first liquid has been supplied. During the supply of the second liquid to the substrate, the controller controls the support unit by adjusting the rotational speed of the substrate, such that the second liquid supplied to the substrate flows only to the edge region of the substrate.

[0024] According to an exemplary embodiment, the controller controls the support unit such that during the supply of the second liquid to the substrate, the rotational speed of the substrate is changed from a first speed to a guide speed slower than the first speed, and the guide speed is the speed at which the second liquid supplied to the substrate flows only to the upper edge region of the substrate.

[0025] According to an exemplary embodiment, the guiding speed includes a first guiding speed and a second guiding speed that is slower than the first guiding speed, and the controller controls the support unit such that the rotation speed of the substrate changes sequentially with the first speed, the first guiding speed, and the second guiding speed.

[0026] According to an exemplary embodiment, the controller controls the second liquid supply nozzle to supply the second liquid to the substrate while the substrate is rotating at the first speed and the first guide speed, which are among the first speed, the first guide speed, and the second guide speed.

[0027] According to an exemplary embodiment, the controller controls the support unit such that the rotational speed of the substrate is changed to a second speed, which is slower than the first speed but faster than the guide speed, between the first speed and the guide speed.

[0028] According to an exemplary embodiment, the controller controls a second liquid supply nozzle to supply a second liquid to the substrate while the substrate is rotating at a second speed.

[0029] According to an exemplary embodiment, the drying chamber includes a support member for supporting a substrate, and the support member supports the rear edge region of the substrate, where liquid treatment is performed on the substrate.

[0030] According to an exemplary embodiment, in a drying chamber, a second liquid is removed from a substrate using a supercritical fluid, and the second liquid has a higher supercritical fluid solubility than the first liquid.

[0031] Furthermore, another exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising a liquid processing step of liquid processing the substrate by supplying liquid to the substrate in a liquid processing chamber; and a drying step of removing liquid from the liquid-processed substrate using a supercritical fluid in a drying chamber. The liquid processing step includes: a first liquid supply step of supplying a first liquid to an upper surface of a rotating substrate; and a second liquid supply step of supplying a second liquid to the upper surface of the rotating substrate, wherein, during the supply of the second liquid to the substrate, the rotational speed of the substrate is changed from a first speed to a second speed slower than the first speed, from the second speed to a first guiding speed slower than the second speed, and from the first guiding speed to a second guiding speed slower than the first guiding speed, such that the second liquid supplied to the substrate is guided to flow only to the edge region of the upper surface, and the second fluid supplied to the substrate is supplied to the substrate while the substrate is rotating at the first speed, second speed, first guiding speed, and second guiding speed.

[0032] According to an exemplary embodiment of the present invention, it is possible to effectively clean the substrate.

[0033] Furthermore, according to an exemplary embodiment of the present invention, it is possible to minimize the deviation of the liquid supplied to the substrate from the upper edge region of the substrate.

[0034] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0035] Figure 1 A view of one embodiment of the apparatus for processing a substrate according to the present invention is shown for illustrative purposes.

[0036] Figure 2 For illustrative purposes only Figure 1 A view of one embodiment of the liquid handling chamber.

[0037] Figure 3 For illustrative purposes only Figure 1 A view of one embodiment of the drying chamber.

[0038] Figure 4 This is a flowchart of a method for processing a substrate according to an embodiment of the present invention.

[0039] Figure 5 To illustrate, according to Figure 4 A view of the state of the substrate being processed in the first liquid supply step of one embodiment.

[0040] Figure 6 According to Figure 4 A flowchart of the second liquid supply step in one implementation scheme.

[0041] Figure 7 To show Figure 6 A view of one embodiment of the rotational speed of the substrate in the second liquid supply step.

[0042] Figure 8 To illustrate, according to Figure 6 A view of the state of the substrate being processed in the replacement step of one embodiment.

[0043] Figure 9 To illustrate, according to Figure 6 A view of the state of the substrate being processed in the compensation step of one embodiment.

[0044] Figure 10 To illustrate, according to Figure 6 A view of the state of the substrate being processed in the first guiding step of one embodiment.

[0045] Figure 11 and Figure 12 To illustrate, according to Figure 6 A view of the state of the substrate being processed in the second guiding step of one embodiment.

[0046] Figure 13 For illustrative purposes only Figure 6 A view of the state of the substrate after the second liquid supply step is completed.

[0047] Figure 14 To illustrate, according to Figure 4 A schematic diagram of the state of the transferred substrate during the transfer step in one embodiment.

[0048] Figure 15 and Figure 16 To illustrate, according to Figure 4 A view of the state of the substrate being processed in the drying step of one embodiment.

[0049] [Symbol Explanation]

[0050] 1: Device; 2: First direction; 4: Second direction; 6: Third direction; 10: Index module; 20: Processing module; 30: Controller; 120: Loading port; 140: Index frame; 142: Index track; 144: Index manipulator; 146: Index hand; 220: Buffer unit; 240: Transfer frame; 242: Guide track; 244: Transfer manipulator; 246: Transfer hand; 300: Liquid processing chamber; 310: Housing; 320: Processing container; 321: Guide wall; 323: Collection tank; 323a: First inlet; 323b: First outlet 323c: Collection line; 325: Collection tank; 325a: Second inlet; 325b: Second outlet; 325c: Collection line; 327: Collection tank; 327a: Third inlet; 327b: Third outlet; 327c: Collection line; 330: Support unit; 331: Rotary chuck; 333: Support pin; 335: Chuck pin; 337: Rotary shaft; 339: Driver; 340: Liquid supply unit; 341: Support rod; 342: Arm; 343: Driver; 344: First liquid supply nozzle; 345: Second liquid supply nozzle; 346: ... Three liquid supply nozzles; 350: Lifting unit; 360: Airflow supply unit; 370: Exhaust unit; 400: Drying chamber; 401: Internal space; 410: Housing; 412: First main body; 414: Second main body; 416: Lifting component; 417: Lifting tank; 418: Lifting rod; 419: Heater; 430: Support; 432: Fixing rod; 434: Holder; 450: Fluid supply unit; 451: Main supply line; 452: First branch line; 453: First valve; 454: Second branch line; 455: Second valve; 460: Exhaust line; 470: Baffle plate; 472: Support member; D1: First thickness; D2: Second thickness; F: Container; L1: First liquid; L2: Second liquid; S10: Liquid processing step; S12: First liquid supply step; S14: Second liquid supply step; S20: Transfer step; S30: Drying step; S141: Replacement step; S143: Compensation step; S145: Guiding step; S147: First guiding step; S149: Second guiding step; V1: First speed; V2: Second speed; V3: First guiding speed; V4: Second guiding speed; W: Substrate. Detailed Implementation

[0051] Exemplary embodiments of the invention will now be described in more detail with reference to the accompanying drawings. Various modifications to the exemplary embodiments of the invention are possible, and the scope of the invention should not be construed as being limited to the following exemplary embodiments. These exemplary embodiments are provided to provide a more comprehensive explanation of the invention to those skilled in the art. Therefore, the shapes of components in the drawings are exaggerated for clearer illustration.

[0052] Terms such as "first" and "second" are used to describe various component parts, but the component parts are not limited by these terms. These terms are only used to distinguish one component part from another. For example, without departing from the scope of the invention, a first component part may be named a second component part, and similarly, a second component part may be named a first component part.

[0053] According to an exemplary embodiment, a process for liquid-treating substrate W by supplying a liquid, such as a cleaning solution, to substrate W will be described as an example. However, this embodiment is not limited to a cleaning process and can be adapted to various processes using liquid-treating substrate W, such as etching, ashing, or developing processes.

[0054] The following will be referenced Figures 1 to 16 A specific embodiment of the present invention will be described in detail. An apparatus 1 for processing a substrate according to an embodiment of the present invention can perform a cleaning process, including a drying process of drying the substrate W using a process fluid.

[0055] Figure 1 A view illustrating one embodiment of an apparatus for processing a substrate according to the present invention is shown for illustrative purposes. Reference Figure 1 The apparatus 1 for processing a substrate includes an indexing module 10 and a processing module 20. According to an exemplary embodiment, the indexing module 10 and the processing module 20 are arranged in one direction. The arrangement direction of the indexing module 10 and the processing module 20 is hereinafter defined as a first direction 2. When viewed from above, the direction perpendicular to the first direction 2 is defined as a second direction 4, and the direction perpendicular to the plane including the first direction 2 and the second direction 4 is defined as a third direction 6.

[0056] The indexing module 10 transfers the substrate W from the container F containing the substrate W to the processing module 20 for processing the substrate W. The indexing module 10 holds the substrate W, which has already been processed in the processing module 20, in the container F. The longitudinal direction of the indexing module 10 is arranged in the second direction 4. The indexing module 10 has a loading port 120 and an indexing frame 140.

[0057] A container F containing the substrate W is placed in the loading port 120. The loading port 120 is arranged on one opposite side of the index frame 140 of the processing module 20. Multiple loading ports 120 can be configured. The multiple loading ports 120 can be arranged in a straight line in the second direction 4. The number of loading ports 120 can be increased or decreased depending on the process efficiency and floor space requirements of the processing module 20.

[0058] Multiple slots (not shown) are formed in container F. The slots (not shown) can accommodate substrate W in a horizontal configuration relative to the ground. A sealed container such as a front-opening unified pod (FOUP) can be used as container F. Container F can be placed in loading port 120 by an operator or by a transfer component (not shown) such as an overhead conveyor, overhead transport, or automated guided vehicle.

[0059] Index track 142 and index robot 144 are disposed inside index frame 140. The longitudinal direction of index track 142 is arranged along the second direction 4 in index frame 140. Index robot 144 can transfer substrate W. Index robot 144 can transfer substrate W between index module 10 and buffer unit 220 described below.

[0060] The indexing robot 144 includes an indexing hand 146. A base plate W is mounted on the indexing hand 146. The indexing hand 146 is configured to move in a second direction 4 on an index track 142. Therefore, the indexing hand 146 can move forward and backward along the index track 142. Furthermore, the indexing hand can be configured to rotate about a third direction 6. Additionally, the indexing hand 146 can be configured to move vertically in the third direction 6. Multiple indexing hands 146 can be provided. The multiple indexing hands 146 can be spaced apart from each other in the vertical direction. The multiple indexing hands 146 can move forward and backward and rotate independently of each other.

[0061] The controller 30 can control the apparatus 1 for processing the substrate. The controller 30 includes a microprocessor (i.e., a computer) that performs control of the apparatus 1 for processing the substrate, a keyboard through which an operator inputs commands to manage the apparatus 1 for processing the substrate, a user interface consisting of a display that visualizes and displays the operating status of the apparatus 1 for processing the substrate, and a storage unit that stores control process formulas for performing processes in the apparatus 1 for processing the substrate under the control of the process controller, or programs for performing processes in various components according to various data and processing conditions (i.e., processing recipes). Furthermore, the user interface and storage unit can be connected to the process controller. The processing recipes can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable hard disk such as a CD-ROM or DVD, or semiconductor memory such as flash memory.

[0062] The controller 30 can control the apparatus 1 for processing the substrate to perform the method for processing the substrate described below. For example, the controller 30 can perform the method for processing the substrate by controlling the components disposed in the liquid processing chamber 300 described below.

[0063] The processing module 20 includes a buffer unit 220, a transfer frame 240, a liquid processing chamber 300, and a drying chamber 400. The buffer unit 220 provides a buffer space in which the substrate W brought into the processing module 20 and the substrate W removed from the processing module 20 are temporarily held. The transfer frame 240 provides a transfer space for transferring the substrate W between the buffer unit 220, the liquid processing chamber 300, and the drying chamber 400.

[0064] The liquid processing chamber 300 performs a liquid processing process on the substrate W by supplying liquid to the substrate W. The drying chamber 400 performs a drying process to remove liquid residue on the substrate W. The liquid processing chamber 300 and the drying chamber 400 can perform a cleaning process. The cleaning process can be performed in the order of the liquid processing chamber 300 and the drying chamber 400. For example, in the liquid processing chamber 300, the substrate W can be treated by supplying chemicals, rinsing fluid, and / or organic solvents to the substrate W. For example, in the drying chamber 400, a supercritical fluid can be used to perform a drying process to remove liquid residue on the substrate W.

[0065] A buffer unit 220 may be arranged between the index frame 140 and the transfer frame 240. The buffer unit 220 may be arranged at one end of the transfer frame 240. The buffer unit 220 has a groove (not shown) inside for placing the substrate W thereon. Multiple grooves (not shown) are provided. These grooves (not shown) may be spaced apart from each other in a third direction 6. The buffer unit 220 has an open front and a closed back. The front surface may be the surface facing the index module 10, and the rear surface may be the surface facing the support frame 240. The indexing robot 144 can access the buffer unit 220 via the front surface, and a transfer robot 244 that can access the buffer unit 220 via the rear surface will be described below.

[0066] The transfer frame 240 can be arranged along the length direction of the first direction 2. The liquid processing chamber 300 and the drying chamber 400 can be arranged on opposite sides of the transfer frame 240. The liquid processing chamber 300 and the drying chamber 400 can be arranged in the side portion of the transfer frame 240. The transfer frame 240 and the liquid processing chamber 300 are arranged in the second direction 4. Furthermore, the transfer frame 240 and the drying chamber 400 can also be arranged in the second direction 4.

[0067] According to an exemplary embodiment, liquid processing chambers 300 are arranged on opposite sides of transfer frame 240, and drying chambers 400 are also arranged on opposite sides of transfer frame 240. Liquid processing chambers 300 may be positioned closer to buffer unit 220 than drying chambers 400. Liquid processing chambers 300 may be arranged in an array of A×B (where A and B are both natural numbers of 1 or greater) in the first direction 2 and the third direction 6 on one side of transfer frame 240. Here, A is the number of liquid processing chambers 300 arranged in a straight line in the first direction 2, and B is the number of liquid processing chambers 300 arranged in a straight line in the third direction 6. For example, when four liquid processing chambers are arranged in one side of transfer frame 240, the liquid processing chambers 300 may be configured in a 2×2 array. The number of liquid processing chambers may be increased or decreased. Unlike the above description, the liquid processing chamber 300 may be disposed only in one side of the transfer frame 240, and only the drying chamber 400 may be disposed in the opposite side. Furthermore, the liquid processing chamber 300 and the drying chamber 400 may be disposed in a single layer in one side and on opposite sides of the transfer frame 240.

[0068] The transfer frame 240 has a guide rail 242 and a transfer robot 244. The guide rail 242 is positioned along a first direction 2 within the transfer frame 240. The transfer robot 244 can be configured to move linearly along the guide rail 242 in the first direction 2. The transfer robot 244 transfers the substrate W between the buffer unit 220, the liquid handling chamber 300, and the drying chamber 400.

[0069] The transfer robot 244 includes a transfer hand 246 on which a base plate W is placed. The transfer hand 246 can be configured to move in a first direction 2 on a guide rail 242. Therefore, the transfer hand 246 can move forward and backward along the guide rail 242. Furthermore, the transfer hand 246 can be configured to rotate about a third direction 6 as an axis and can move in the third direction 6. Multiple transfer hands 246 can be provided. The multiple transfer hands 246 can be spaced apart from each other in the vertical direction. The multiple transfer hands 246 can move forward and backward and rotate independently of each other.

[0070] The liquid processing chamber 300 performs liquid processing processes on the substrate W. For example, the liquid processing chamber 300 may be a chamber performing a cleaning process to remove process byproducts adhering to the substrate W. The liquid processing chambers 300 may have different structures depending on the type of process used to process the substrate W. Alternatively, the liquid processing chambers 300 may have the same structure.

[0071] Figure 2 For illustrative purposes only Figure 1A view of one embodiment of a liquid handling chamber. (Reference) Figure 2 The liquid processing chamber 300 includes a housing 310, a processing container 320, a support unit 330, and a liquid supply unit 340.

[0072] The housing 310 has an internal space. The housing 310 is configured in a generally rectangular parallelepiped shape. An opening (not shown) is formed in one side of the housing 310. The opening (not shown) serves as an inlet, through which the substrate W is brought into or out of the internal space of the housing 310 by a transfer robot 244. The processing container 320, the support unit 330, and the liquid supply unit 340 are arranged in the internal space of the housing 310.

[0073] The processing container 320 has a processing space that opens at the top. The processing container 320 may be a bowl with a processing space. The processing container 320 may be configured to surround the processing space. The processing space of the processing container 320 is configured as a space in which the support unit 330 described below supports and rotates the substrate W. The processing space is configured as a space in which the liquid supply unit 340 described later supplies liquid to the substrate W and processes the substrate W.

[0074] According to an exemplary embodiment, the processing container 320 may have a guide wall 321 and a plurality of collection tanks 323, 325 and 327. Each of the collection tanks 323, 325 and 327 separates and collects different liquids from the liquid used to process the substrate W. Each of the collection tanks 323, 325 and 327 may have a collection space for collecting the liquid used to process the substrate W.

[0075] The guide wall 321 and the collection tanks 323, 325, and 327 are arranged in an annular shape around the support unit 330. When liquid is supplied to the substrate W, the liquid scattered by the rotation of the substrate W can be introduced into the collection space through the inlets of each of the collection tanks 323, 325, and 327. Different types of liquids can be introduced into each of the collection tanks 323, 325, and 327.

[0076] The processing container 320 has a guide wall 321, a first collection tank 323, a second collection tank 325, and a third collection tank 327. The guide wall 321 is arranged in an annular shape around the support unit 330. The first collection tank 323 is arranged in an annular shape around the guide wall 321. The second collection tank 325 is arranged in an annular shape around the first collection tank 323. The third collection tank 327 is arranged in an annular shape around the second collection tank 325.

[0077] The space between the guide wall 321 and the first collection tank 323 serves as a first inlet 323a through which liquid is introduced. The space between the first collection tank 323 and the second collection tank 325 serves as a second inlet 325a through which liquid is introduced. The space between the second collection tank 325 and the third collection tank 327 serves as a third inlet 327a through which liquid is introduced. The second inlet 325a may be arranged above the first inlet 323a, and the third inlet 327a may be arranged above the second inlet 325a. The liquid introduced into the first inlet 323a, the liquid introduced into the second inlet 325a, and the liquid introduced into the third inlet 327a may be different types of liquid.

[0078] The space between the lower end of the guide wall 321 and the first collection tank 323 serves as the first outlet 323b, through which air and flue gas generated from the liquid are discharged. The space between the lower end of the first collection tank 323 and the second collection tank 325 serves as the second outlet 325b, through which air and flue gas generated from the liquid are discharged. The space between the lower end of the second collection tank 325 and the third collection tank 327 serves as the third outlet 327b, through which air and flue gas generated from the liquid are discharged. The flue gas and air discharged from the first outlet 323b, the second outlet 325b, and the third outlet 327b are discharged to the outside of the liquid processing chamber 300 via the exhaust unit 370.

[0079] Collection lines 323c, 325c, and 327c, extending vertically downwards, connect to the bottom surfaces of collection tanks 323, 325, and 327, respectively. Each of the collection lines 323c, 325c, and 327c discharges liquid introduced through collection tanks 323, 325, and 327. The discharged treated liquid can be reused via an external liquid regeneration system (not shown).

[0080] The support unit 330 supports and rotates the substrate W within the processing space. The support unit 330 may include a rotary chuck 331, a support pin 333, a chuck pin 335, a rotation shaft 337, and a driver 339.

[0081] When viewed from above, the rotary chuck 331 has an upper surface that is configured in a generally circular shape. The upper surface of the rotary chuck 331 may have a diameter larger than that of the substrate W.

[0082] Multiple support pins 333 are provided. The support pins 333 are arranged on the upper surface of the rotary chuck 331. The support pins 333 are spaced apart from each other at predetermined intervals on the edge portion of the upper surface of the rotary chuck 331. The support pins 333 are formed to protrude upward from the upper surface of the rotary chuck 331. The support pins 333 are arranged in combination to have an overall annular shape. The support pins 333 support the rear edge region of the substrate W, such that the substrate W is spaced apart from the upper surface of the rotary chuck 331 by a predetermined distance.

[0083] Multiple chuck pins 335 are provided. The chuck pins 335 are arranged relatively away from the center area of ​​the rotary chuck 331 compared to the support pins 333. The chuck pins 335 protrude upward from the upper surface of the rotary chuck 331. The chuck pins 335 support the side of the substrate W, so that they do not deviate from their normal position in the lateral direction when the substrate W rotates. The chuck pins 335 are configured to move linearly between a waiting position and a supported position in the radial direction of the rotary chuck 331. The waiting position is defined as the position of the chuck pins 335 when the substrate W is received from or transferred to the transfer robot 244. The supported position is defined as the position of the chuck pins 335 when a process is performed on the substrate W. In the supported position, the chuck pins 335 are in contact with the side of the substrate W. The waiting position is arranged relatively away from the center area of ​​the rotary chuck 331 compared to the supported position.

[0084] A rotating shaft 337 is connected to a rotating chuck 331. The rotating shaft 337 is connected to the lower surface of the rotating chuck 331. The longitudinal direction of the rotating shaft can be configured to face a third direction 6. The rotating shaft 337 is configured to rotate by receiving power from a driver 339. The rotating shaft 337 rotates via the driver 339, and the rotating chuck 331 rotates via the rotating shaft 337. The driver 339 rotates the rotating shaft 337. The driver 339 can change the rotational speed of the rotating shaft 337. The driver 339 can be a motor providing the driving force. However, the invention is not limited thereto, and various modifications can be made to the driver, setting it to a known device for providing driving force.

[0085] Liquid supply unit 340 supplies liquid to substrate W. Liquid supply unit 340 supplies liquid to substrate W supported by support unit 330. Multiple liquids are supplied to substrate W through liquid supply unit 340. According to an exemplary embodiment, the liquid supplied to substrate W through liquid supply unit 340 may include a first liquid and a second liquid. The first liquid and the second liquid may be supplied to substrate W sequentially.

[0086] The liquid supply unit 340 may include a support rod 341, an arm 342, a driver 343, a first liquid supply nozzle 344, and a second liquid supply nozzle 345.

[0087] Support rod 341 is arranged within the internal space of housing 310. Support rod 341 can be arranged on one side of processing container 320 within the internal space. Support rod 341 can have a rod-like shape facing the third direction 6 in the longitudinal direction. Support rod 341 is configured to be rotatable by actuator 343.

[0088] Arm 342 is connected to the upper end of support rod 341. Arm 342 extends vertically along the length of support rod 341. The longitudinal direction of arm 342 can be formed in a third direction 6. A first liquid supply nozzle 344 and a second liquid supply nozzle 345, which will be described below, can be fixedly connected to one end of arm 342.

[0089] Arm 342 can be configured to move back and forth in the longitudinal direction. Arm 342 can be oscillated via support rod 341 by rotating support rod 341 via actuator 343. By rotating arm 342, the first liquid supply nozzle 344 and the second liquid supply nozzle 345 can also oscillate to allow movement between the process position and the waiting position.

[0090] The process position can be the position where one of the first liquid supply nozzle 344 and the second liquid supply nozzle 345 faces the substrate W supported by the support unit 330. According to an exemplary embodiment, the process position can be the position where the center of one of the first liquid supply nozzle 344 and the second liquid supply nozzle 345 faces the center of the substrate W supported by the support unit 330. The waiting position can be a position where both the first liquid supply nozzle 344 and the second liquid supply nozzle 345 are offset from the process position.

[0091] A drive 343 is coupled to a support rod 341. The drive 343 may be disposed on the bottom surface of the housing 310. The drive 343 provides a driving force for rotating the support rod 341. The drive 343 may be provided as a known motor that provides the driving force.

[0092] A first liquid supply nozzle 344 supplies a first liquid to the substrate W. The first liquid supply nozzle 344 can supply the first liquid to the substrate W supported by the support unit 330. The first liquid can be a liquid used to remove films or foreign matter remaining on the substrate W. According to an exemplary embodiment, the first liquid can be a chemical including acids or bases, such as sulfuric acid (H2SO4), nitric acid (HNO3), hydrochloric acid (HCl), etc.

[0093] The second liquid supply nozzle 345 supplies a second liquid to the substrate W. The second liquid supply nozzle 345 supplies the second liquid to the substrate W supported by the support unit 330. According to an exemplary embodiment, the second liquid may be a liquid neutralized by the first liquid. According to an exemplary embodiment, the second liquid may be a liquid readily soluble in process fluids. Furthermore, the second liquid may be a liquid readily soluble in supercritical fluids used in the drying chamber 400 described below. According to an exemplary embodiment, the second liquid may be a liquid relatively more soluble in process fluids than the first liquid. According to one embodiment, the second liquid may be any of pure water and alcohols such as isopropanol (IPA).

[0094] The liquid supply unit 340 according to an exemplary embodiment of the present invention has been described as an embodiment in which both the first liquid supply nozzle 344 and the second liquid supply nozzle 345 are connected to the arm 342, but the invention is not limited thereto. For example, each of the first liquid supply nozzle 344 and the second liquid supply nozzle 345 may independently have an arm, a support rod, and an actuator, and may independently swing and move forward and backward to allow movement between a process position and a waiting position.

[0095] The liquid supply unit 340 according to an exemplary embodiment of the present invention has been described as having a first liquid supply nozzle 344 and a second liquid supply nozzle 345, but the present invention is not limited thereto. For example, the liquid supply unit 340 may include a first liquid supply nozzle 344, a second liquid supply nozzle 345, and a third liquid supply nozzle 346. The first liquid supplied to the substrate W from the first liquid supply nozzle 344 may be a chemical. The second liquid supplied to the substrate W from the second liquid supply nozzle 345 may be pure water. The third liquid supplied to the substrate W from the third liquid supply nozzle 346 may be an organic solvent containing isopropanol or the like.

[0096] The lifting unit 350 is arranged within the internal space of the housing 310. The lifting unit 350 adjusts the relative height between the processing container 320 and the support unit 330. The lifting unit 350 can linearly move the processing container 320 in a third direction 6. Therefore, since the heights of the collection tanks 323, 325, and 327 for collecting liquid vary depending on the type of liquid supplied to the substrate W, the liquid can be separated and collected. Unlike the above description, the processing container 320 is fixedly mounted, and the lifting unit 350 can change the relative height between the support unit 330 and the processing container 320 by vertically moving the support unit 330.

[0097] Airflow supply unit 360 supplies airflow to the interior space of housing 310. Airflow supply unit 360 can supply downflow to the interior space. Airflow supply unit 360 can be configured as a fan filter unit. Airflow supply unit 360 can be mounted on the upper portion of housing 310. The gas supplied to the interior space of housing 310 via airflow supply unit 350 forms a downflow in the interior space. Byproducts or similar substances generated in the processing space during process advancement are discharged to the outside of housing 310 via exhaust unit 370 through the downflow formed in the interior space and the processing space.

[0098] Exhaust unit 370 discharges process byproducts, such as fumes and gases, generated in the processing space. During the liquid processing of substrate W, process byproducts, such as fumes and gases, generated by a pressure-reducing unit (not shown) provided in exhaust unit 370 are discharged. Exhaust unit 370 may be connected to the bottom surface of processing container 320. For example, exhaust unit 370 may be arranged in the space between rotating shaft 337 and inner wall of processing container 320.

[0099] The drying chamber 400 uses a process fluid to remove liquid residue on the substrate W. According to an exemplary embodiment, the drying chamber 400 uses a supercritical fluid to remove a second liquid residue on the substrate W. In the drying chamber 400, a supercritical process is performed using the properties of the supercritical fluid. Representative embodiments include supercritical drying and supercritical etching processes. The supercritical process will be described below based on the supercritical drying process. However, since this is only for ease of description, the drying chamber 400 may perform another supercritical process besides supercritical drying. According to an exemplary embodiment, supercritical carbon dioxide (scCO2) can be used as the supercritical fluid.

[0100] Figure 3 It is shown schematically. Figure 1 A view of one embodiment of the drying chamber. (Reference) Figure 3 The drying chamber 400 may include a housing 410, a support 430, a fluid supply unit 450, an exhaust line 460, and a baffle plate 470. The housing 410 provides an internal space 401 in which the drying process is performed on the substrate W. The housing 410 may include a first body 412, a second body 414, and a lifting member 416.

[0101] The first body 412 and the second body 414 are combined to provide an interior space 401. The first body 412 can be arranged on top of the second body 414. The position of the first body 412 is fixed, while the second body 414 can be lifted by the lifting member 416.

[0102] When the second body 414 descends and is spaced apart from the first body 412, the internal space 401 opens. When the internal space 401 opens, the substrate W can be brought into the internal space 401, or the substrate W can be brought out of the internal space 401. The substrate W brought into the internal space 401 may be a substrate W that has been treated with liquid in the liquid processing chamber 300. According to an exemplary embodiment, the second liquid may be retained in the substrate W brought into the internal space 401.

[0103] When the second body 414 rises and comes into close contact with the first body 412, the internal space 401 is sealed. When the internal space 401 is sealed, the substrate W can be dried by supplying process fluid.

[0104] The lifting member 416 raises and lowers the second body 414. The lifting member 416 may include a lifting tank 417 and a lifting rod 418. The lifting tank 417 may be connected to the second body 414. The lifting tank 417 can overcome high pressures exceeding the critical pressure of the internal space 401 during the drying of the substrate W, and seals the internal space 401 by bringing the first body 412 and the second body 414 close to each other.

[0105] The lifting rod 418 generates a lifting force in the vertical direction. For example, the lifting rod 418 can generate a force that moves in the third direction 6. The length direction of the lifting rod 418 can be formed in the vertical direction. One end of the lifting rod 418 can be inserted into the lifting tank 417. The other end of the lifting rod 418 can be connected to the first body 412. The second body 414 can move in the vertical direction through the relative lifting motion between the lifting tank 417 and the lifting rod 418. When the second body 414 moves in the vertical direction, the lifting rod 418 prevents the first body 412 and the second body 414 from moving in the horizontal direction. The lifting rod 418 guides the vertical direction of movement of the second body 414. The lifting rod 418 can prevent the first body 412 and the second body 414 from deviating from their normal positions.

[0106] According to the exemplary embodiment of the present invention described above, the second body 414 is vertically movable to seal the internal space 401, but the present invention is not limited thereto. For example, the first body 412 and the second body 414 can each move in the vertical direction. Furthermore, the first body 412 can move in the vertical direction, while the position of the second body 414 can be fixed.

[0107] Unlike the embodiments described above, the housing 410 can be a single housing 410, wherein an opening (not shown) is formed on one side of the housing 410, through which the substrate W is brought in and out. A door (not shown) can be provided in the housing 410. The door (not shown) can move vertically to open and close the opening (not shown) and can keep the housing 410 sealed.

[0108] Heater 419 may be installed in housing 410. According to an exemplary embodiment, heater 419 may be embedded and installed in at least one of first body 412 and second body 414. Heater 419 heats the process fluid supplied to internal space 401 above a critical temperature and maintains it in a supercritical fluid phase, or may reheat the process fluid to a supercritical fluid phase when the process fluid is liquefied.

[0109] The support member 430 supports the substrate W within the internal space 401. The support member 430 can be fixedly mounted on the lower surface of the first body 412. The support member 430 may have a fixing rod 432 and a retainer 434.

[0110] The fixing rod 432 can be fixedly mounted on the first body 412, thus protruding downward from the bottom surface of the first body 412. The length direction of the fixing rod 432 is arranged in the vertical direction. Multiple fixing rods 432 can be provided. The multiple fixing rods 432 are spaced apart from each other. When the substrate W is brought into or out of the space surrounded by the multiple fixing rods 432, the multiple fixing rods 432 are arranged in a position that will not interfere with the substrate W. The retainer 434 is connected to each of the fixing rods 432.

[0111] A retainer 434 extends from a fixing rod 432. The retainer 434 extends from the lower end of the fixing rod 432 into the space surrounded by the fixing rod 432. The retainer 434 supports the rear edge region of the substrate W. For example, the rear surface of the substrate W can be an unpatterned surface, while the upper surface of the substrate W can be a patterned surface. Due to the above structure, the edge region of the substrate W brought into the internal space 401 can be placed on the retainer 434. Furthermore, a portion of the entire upper surface region of the substrate W, the central region of the bottom surface of the substrate W, and the edge region of the bottom surface of the substrate W can be exposed to the process fluid supplied to the internal space 401.

[0112] Fluid supply unit 450 supplies process fluid to internal space 401. According to one embodiment, the process fluid may be supplied to internal space 401 in a supercritical state. However, the invention is not limited thereto; the process fluid may be supplied to internal space 401 in a gaseous state and undergo a phase change to a supercritical state within internal space 401. Fluid supply unit 450 may have a main supply line 451, a first branch line 452, and a second branch line 454.

[0113] One end of the main supply line 451 is connected to a supply source (not shown) in which process fluid is stored. The other end of the main supply line 451 branches into a first branch line 452 and a second branch line 454. The first branch line 452 is connected to the upper surface of the housing 410. According to an exemplary embodiment, the first branch line 452 may be connected to a first body 412. For example, the first branch line 452 may be coupled to the central portion of the first body 412. The first branch line 452 may be arranged in the upper central region of the substrate W placed on the support 430. A first valve 453 may be mounted on the first branch line 452. The first valve 453 may be provided as an on / off valve. Process fluid may be selectively supplied to the internal space 401 depending on whether the first valve 453 is open or closed.

[0114] The second branch line 454 is connected to the lower surface of the housing 410. According to an exemplary embodiment, the second branch line 454 may be connected to the second body 414. For example, the second branch line 454 may be coupled to the central portion of the second body 414. The second branch line 454 may be arranged vertically below the central region of the substrate W placed on the support 430. A second valve 455 may be installed in the second branch line 454. The second valve 455 may be provided as an on / off valve. Process fluid may be selectively supplied to the internal space 401 depending on whether the second valve 455 is open or closed.

[0115] Exhaust line 460 discharges the atmosphere from the interior space 401. Exhaust line 460 may be connected to the second body 414. According to an exemplary embodiment, when viewed from above, exhaust line 460 may be offset from the center of the lower surface of the second body 414. Supercritical fluid flowing through the interior space 401 is discharged to the outside of the housing 410 via exhaust line 460.

[0116] A baffle plate 470 is disposed in the internal space 401. The baffle plate 470 may be configured to overlap with the outlet of the second branch line 454 and the inlet of the exhaust line 460 when viewed from above. The baffle plate 470 can prevent damage to the substrate W by directly discharging the process fluid supplied via the second branch line 454 toward the substrate W.

[0117] The baffle plate 470 can be spaced upward from the bottom surface of the housing 410 at a predetermined distance. For example, the baffle plate 470 can be supported by a support member 472 to be spaced upward from the bottom surface of the housing 410. The support member 472 can be provided in a rod-like form. Multiple support members 472 can be provided. The multiple support members 472 are spaced apart from each other at a predetermined distance.

[0118] The method for processing a substrate according to an exemplary embodiment of the present invention will be described in detail below. The method for processing the substrate described below can be performed by a transfer robot 244, a liquid processing chamber 300, and a drying chamber 400. Furthermore, the controller 30 can perform the method for processing the substrate by controlling the components of the transfer robot 244, the liquid processing chamber 300, and the drying chamber 400.

[0119] Figure 4 This is a flowchart of a method for processing a substrate according to one embodiment of the present invention. (Reference) Figure 4 The method for processing a substrate according to an exemplary embodiment includes a liquid treatment step S10, a transfer step S20, and a drying step S30. The liquid treatment step S10, the transfer step S20, and the drying step S30 are performed sequentially. Furthermore, the liquid treatment step S10, the transfer step S20, and the drying step S30 can be collectively defined as a cleaning process.

[0120] Liquid processing step S10 is performed in liquid processing chamber 300. In liquid processing step S10, liquid is supplied to substrate W to process substrate W with liquid. According to an exemplary embodiment, liquid processing step S10 may include a first liquid supply step S12 and a second liquid supply step S14.

[0121] In the first liquid supply step S12, the substrate W can be processed by supplying a first liquid to the substrate W. The first liquid can be a chemical, including acids or bases such as sulfuric acid (H2SO4), nitric acid (HNO3), and hydrochloric acid (HCl). In the second liquid supply step S14, the substrate W can be processed by supplying a second liquid to the substrate W. The second liquid can be any of pure water and alcohols such as isopropanol (IPA). The first liquid and the second liquid can be supplied to the substrate W sequentially.

[0122] The transfer step S20 is performed by the transfer robot 244. In the transfer step S20, the transfer robot 244 transfers the substrate W from the liquid processing chamber 300 to the drying chamber 400. In the transfer step S20, the substrate W, on which the liquid processing step S10 has been completed in the liquid processing chamber 300, is transferred to the drying chamber 400.

[0123] The drying step S30 is performed in the drying chamber 400. In the transfer step S20, the substrate W transferred by the transfer robot 244 is brought into the internal space 401 of the drying chamber 400. In the drying step S30, the process fluid supplied to the substrate W is brought into the drying chamber 400 to remove any liquid remaining on the substrate W.

[0124] The following will be referenced Figures 5 to 16The process of processing substrate W via liquid treatment step S10, transfer step S20, and drying step S30 according to an exemplary embodiment of the present invention is described in detail.

[0125] Figure 5 It is an illustrative representation based on Figure 4 A view of the state of the substrate being processed during the first liquid supply step in one embodiment. (Reference) Figure 5 In the first liquid supply step S12, the first liquid L1 is supplied to the substrate W. In the first liquid supply step S12, the first liquid supply nozzle 344 may be arranged in a region opposite to the center region of the rotating substrate W, and the first liquid supply nozzle 344 may supply the first liquid to the center region of the substrate W. According to an exemplary embodiment, in the first liquid supply step S12, the first liquid may be supplied to the center of the substrate.

[0126] Figure 6 It is based on Figure 4 A flowchart of the second liquid supply step of an exemplary implementation. Figure 7 It is shown Figure 6 A schematic diagram of an exemplary embodiment of the rotational speed of the substrate in the second fluid supply step. Figures 8 to 13 This is a view showing the state of the substrate being processed in each step of the second liquid supply step.

[0127] The following will be referenced Figures 6 to 13 The process of processing substrate W in the second liquid treatment step is described in detail.

[0128] In the second liquid supply step S14, the second liquid L2 is supplied to the substrate W. In the second liquid supply step S14, the second liquid supply nozzle 345 is arranged in a region opposite to the center region of the rotating substrate W, and the second liquid supply nozzle 345 supplies the second liquid L2 to the center region of the substrate W. According to an exemplary embodiment, in the second liquid supply step S14, the second liquid L2 can be supplied to the center of the substrate W. In the second liquid supply step S14, the rotation speed of the substrate W is adjusted such that the second liquid L2 supplied to the center region of the substrate W flows only from the center region of the substrate W to the edge region of the substrate W.

[0129] refer to Figure 6 The second liquid supply step S14 may include a replacement step S141, a compensation step S143, and a guiding step S145. The guiding step S145 may include a first guiding step S147 and a second guiding step S149. The replacement step S141, the compensation step S143, the first guiding step S147, and the second guiding step S149 may be executed sequentially in the liquid processing chamber 300.

[0130] In replacement step S141, the second liquid L2 is supplied to the rotating substrate W. According to an exemplary embodiment, in replacement step S141, the second liquid L2 can be supplied to the central region of the substrate rotating at a first speed V1. In compensation step S143, the second liquid L2 is supplied to the rotating substrate W. According to an exemplary embodiment, the second liquid L2 can be supplied to the central region of the substrate rotating at a second speed V2.

[0131] In the guiding step S145, the flow area of ​​the second liquid L2 supplied to the substrate W can be adjusted by changing the rotational speed of the substrate W. According to an exemplary embodiment, in the guiding step S145, the rotational speed of the substrate W can be changed within the guiding speed range to guide the second liquid L2 supplied to the substrate W to flow only to the edge area of ​​the substrate W.

[0132] In the first guiding step S147, the second liquid L2 is supplied to the rotating substrate W. According to an exemplary embodiment, the first guiding step S147 may supply the second liquid L2 to the central region of the substrate rotating at a first guiding speed V3. In the second guiding step S149, the substrate W may rotate. For example, in the second guiding step S149, the supply of the second liquid L2 to the substrate W may be stopped, and the substrate W may rotate at a second guiding speed V4.

[0133] The following is based on reference Figure 7 The rotational speeds of the substrate in the replacement step S141, compensation step S143, first guiding step S147, and second guiding step S149 of the exemplary embodiments of the present invention described herein will be described based on relative numerical relationships rather than absolute values ​​for ease of interpretation.

[0134] refer to Figure 7 In the replacement step S141, the substrate W can rotate at a first speed V1. In the compensation step S143, the substrate W can rotate at a second speed V2. In the first guiding step S147, the substrate can rotate at a first guiding speed V3. In the second guiding step S149, the substrate W can rotate at a second guiding speed V4. According to an exemplary embodiment, the first speed V1 can be faster than the second speed V2. Furthermore, the second speed V2 can be faster than the first guiding speed V3. Furthermore, the first guiding speed V3 can be faster than the second guiding speed V4. Optionally, the first guiding speed V3 can be the same as the second guiding speed V4.

[0135] refer to Figure 8In the replacement step S141, a second liquid L2 is supplied to the substrate W, which is rotating at a first speed V1, and the first liquid L1 previously supplied to the substrate W in the first liquid supply step S12 is replaced by the second liquid L2. In the replacement step S141, the second liquid L2 can be supplied to the substrate W in an amount not exceeding the edge of the substrate W. According to an exemplary embodiment, the replacement step S141 can be performed until all of the first liquid L1 previously supplied to the substrate is replaced by the second liquid L2. After the replacement step S141 is completed, the second liquid L2 supplied to the upper surface of the substrate W can have a first thickness D1.

[0136] refer to Figure 9 In compensation step S143, the second liquid L2 can be supplied to the substrate W rotating at a second speed V2 to compensate for the amount of the second liquid previously supplied in replacement step S141. In compensation step S143, the second liquid L2 can be further supplied to the substrate W to increase the thickness of the second liquid L2 previously supplied to the upper surface of the substrate. For example, after completing compensation step S143, the second liquid L2 supplied to the upper surface of the substrate W may have a second thickness D2. According to an exemplary embodiment, the amount of the second liquid L2 supplied to the substrate W in compensation step S143 may be relatively less than the amount of the second liquid L2 supplied to the substrate W in replacement step S141.

[0137] In compensation step S143, the amount of second liquid L2 previously supplied to substrate W is increased by supplying the second liquid L2 to the upper surface of substrate W. However, the amount of second liquid L2 supplied to substrate W can be adjusted so that the second liquid L2 does not penetrate the rear surface of substrate W. Furthermore, in compensation step S143, the second rotational speed V2 of substrate W can be a speed that limits the flow of the second liquid L2 supplied to substrate W to the rear surface of substrate W.

[0138] refer to Figure 10 In the first guiding step S147, the second liquid L2 can be supplied to the substrate W rotating at a first guiding speed V3. For example, in the first guiding step S147, the second liquid L2 can be supplied to the region including the center of the substrate W. The first guiding speed V3 is slower than the first speed V1 and the second speed V2. The second liquid L2 supplied to the relatively slowly rotating substrate W can flow only in the region including the center of the substrate W.

[0139] refer to Figure 11 and Figure 12In the second guiding step S149, the supply of the second liquid L2 to the substrate W is stopped, and the second liquid supply nozzle 345 can move from the process position to the waiting position. In the second guiding step S149, the substrate W can rotate at a second guiding speed V4. The second guiding speed V4 can be a speed at which the second liquid L2 previously supplied to the substrate W in the first guiding step S147 penetrates to the rear surface of the substrate W. That is, the second guiding speed V4 can be a speed at which the second liquid L2 previously supplied to the central region of the substrate W in the first guiding step S147 flows only to the upper edge of the substrate W. Therefore, in the second guiding step S149, the substrate W can rotate at a speed equal to or lower than the first guiding speed V3 to allow the second liquid L2 supplied to the central region of the substrate W to flow to the edge region of the substrate W in the first guiding step S149. For example, in the second guiding step S149, the second liquid L2 discharged in the first guiding step S147 to the region including the center of the substrate W can flow only to the upper edge region of the substrate W. Since the substrate W rotates at a low speed in the second guiding step S149, a molten pool can be formed by centrifugal force. The second liquid L2 formed in the central region of the substrate W in the molten pool is relatively thicker than the second liquid L2 formed in the edge region of the substrate.

[0140] refer to Figure 13 During the second guiding step S149, the second liquid L2 flowing in the central region of the substrate W gradually moves to the edge region of the substrate W. Since the substrate W rotates at a slow speed of the second guiding speed V4 during the second guiding step S149, the second liquid L2 supplied to the central region of the substrate W does not deviate from the edge region of the substrate W. Furthermore, since the second liquid L2 flows from the central region of the substrate W to the edge region of the substrate W during the second guiding step S149, after the second guiding step S149 is completed, the edge region of the substrate W may have a relatively higher thickness of the second liquid L2 than the central region of the substrate W.

[0141] Figure 14 It is an illustrative representation based on Figure 4 A schematic diagram illustrating the state of the transferred substrate during the transfer step in one embodiment. (Reference) Figure 14 The transfer step S20 is performed by the transfer robot 244. In the transfer step S20, after liquid treatment is completed on the substrate W in the liquid treatment chamber 300, the substrate W is transferred from the liquid treatment chamber 300 to the drying chamber 400. When the substrate W is transferred by the transfer robot 244, the liquid remains on the substrate W. According to the exemplary embodiment of the present invention, in the liquid treatment step S10, when the transfer robot 244 transfers the substrate W, liquid penetration into the rear surface of the substrate W can be minimized, so that liquid does not remain on the rear surface of the substrate W.

[0142] Figure 15 and Figure 16 It is an illustrative representation based on Figure 4 A view of the state of the substrate during the drying step in one embodiment. (Reference) Figure 15 In drying step S30, the substrate W is dried. In drying step S30, the substrate W on which the liquid treatment step S10 has been completed is dried. For example, in drying step S30, the second liquid L2 supplied to the substrate W may be removed. Drying step S30 is performed in drying chamber 400. In drying step S31, the substrate W is transferred to support member 430 with the internal space 401 open. The substrate W transferred to support member 430 may be the substrate W on which the second guiding step S149 has been completed.

[0143] refer to Figure 16 When the substrate W is placed on the support 430, the first body 412 and the second body 414 are in close contact with each other, and the internal space 401 is sealed to the outside. For example, when the substrate W is placed on the holder 434 and the rear edge region of the substrate W is supported by the holder 434, the internal space 401 switches to a sealed state. After sealing the internal space 401, the fluid supply unit 450 supplies process fluid to the internal space 401. According to an exemplary embodiment, the fluid supply unit 450 can supply supercritical fluid to the internal space 401. By supplying process fluid to the internal space 401, the substrate W is dried. That is, by supplying process fluid to the internal space 401, the second liquid L2 present on the upper surface of the substrate W is removed.

[0144] After sealing the internal space 401, the second valve 455 is opened, allowing the process fluid to be supplied to the internal space 401 via the second branch line 454. After the process fluid is supplied to the lower region of the internal space 401, the first valve 453 can be opened, allowing the process fluid to be supplied to the internal space 401 via the first branch line 452.

[0145] Since the substrate can be dried in the initial stage when the internal space 401 is below the critical pressure, the process fluid supplied to the internal space 401 can be liquefied. When the process fluid is supplied to the internal space 401 via the first branch line 452 in the initial stage of drying the substrate, the process fluid can be liquefied and fall onto the substrate W by gravity, causing damage to the substrate W. Therefore, in the drying step S30 according to an exemplary embodiment of the present invention, after the process fluid has been previously supplied to the internal space 401 via the second branch line 454 and the pressure in the internal space 401 has reached the critical pressure, the process fluid is supplied to the first branch line 452, and then the process fluid supplied to the internal space 401 can be liquefied, thereby minimizing damage to the substrate W.

[0146] In a later stage of the drying step S30, the internal atmosphere of the internal space 401 is discharged via the exhaust line 460. When the pressure in the internal space 401 drops below the critical pressure, the process fluid can be liquefied. The liquefied process fluid can be discharged by gravity via the exhaust line 460.

[0147] When substrate W is treated with liquid, the liquid supplied to substrate W is fluid. During the process of supplying liquid to substrate W, the liquid supplied to substrate W may deviate from the edge area of ​​substrate W and penetrate into the rear surface of substrate W. The liquid that has penetrated into the rear surface of substrate W requires a long time to dry naturally. Furthermore, when liquid treatment is performed on substrate W, since substrate W is usually supported by a support, it is difficult to easily remove the liquid that has penetrated into the rear surface of substrate W manually. The liquid that has penetrated into the rear surface of substrate W acts as a source of contamination, which can contaminate subsequent substrates when performing substrate transfer processes or other processing processes after transfer.

[0148] According to the exemplary embodiment of the present invention described above, when liquid is supplied to substrate W to perform liquid processing, the rotational speed of substrate W is changed to minimize liquid penetration into the rear surface of substrate W. Therefore, contamination of subsequent substrates due to liquid penetration into the rear surface of substrate W can be minimized.

[0149] Specifically, according to an exemplary embodiment of the present invention, after liquid treatment is performed on the substrate W in the liquid treatment chamber 300, the liquid treatment is transferred to the drying chamber 400, where a drying process is performed to remove the liquid supplied to the substrate W. In the drying chamber 400, the drying process is performed on the substrate W with the rear edge region of the substrate W supported by the support member 430. By suppressing the flow of liquid on the rear surface of the substrate W when liquid treatment is performed, the support member 430 can support the rear edge region of the substrate W, which is free of liquid, in the drying chamber 400. Therefore, sources of contamination that could occur in the drying chamber 400 and subsequently contaminate the substrate W can be prevented beforehand.

[0150] The above detailed description illustrates the present invention. Furthermore, the foregoing illustrates and describes exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, the foregoing can be modified or corrected within the scope of the inventive concept disclosed in this specification, within the scope equivalent to the scope of this disclosure, and / or within the scope of technology or knowledge in the art. The above exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in the specific application fields and uses of the invention. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted to also include other exemplary embodiments.

Claims

1. A method for processing a substrate, the method comprising the following steps: The substrate is treated with liquid; as well as The substrate treated with the liquid is then dried. in, The liquid processing steps include: A first liquid supply step, wherein the first liquid supply step supplies a first liquid to the upper surface of the rotating substrate; and The second liquid supply step supplies a second liquid to the upper surface of the rotating substrate, and In the second liquid supply step, the rotation speed of the substrate is adjusted so that the second liquid supplied to the substrate flows only from the center region of the substrate to the edge region of the substrate. The second liquid supply step includes: A replacement step, wherein the first liquid supplied to the substrate is replaced with the second liquid; A compensation step, wherein the compensation step compensates for the amount of the second liquid supplied to the substrate; and A guiding step, wherein the guiding step guides the second liquid supplied to the substrate to flow only to the edge region of the substrate by changing the rotational speed of the substrate within a guiding speed range. The guiding steps include: A first guiding step, wherein the first guiding step supplies the second liquid to the substrate rotating at a first guiding speed; and In the second guiding step, the supply of the second liquid to the substrate is stopped and the substrate is rotated. In the second guiding step, the rotational speed of the substrate changes from the first guiding speed to the second guiding speed, and The first guidance speed is faster than the second guidance speed.

2. The method for processing a substrate according to claim 1, wherein, In the replacement step, the second liquid is supplied to the substrate rotating at a first speed, and In the compensation step, the second liquid is supplied to the substrate rotating at a second speed. The first speed is faster than the second speed.

3. The method for processing a substrate according to claim 2, wherein, The second speed is faster than the first guiding speed.

4. The method for processing a substrate according to claim 2, wherein, The second speed is the speed at which the second liquid supplied to the substrate flows to the rear surface of the substrate.

5. The method for processing a substrate according to claim 1, wherein, In the second liquid supply step, the second liquid flows only to the upper edge region of the substrate.

6. The method for processing a substrate according to claim 1, wherein, The drying step is performed using a supercritical fluid, and The second liquid has a higher supercritical fluid solubility than the first liquid.

7. The method for processing a substrate according to claim 6, wherein, The drying step is performed with the substrate supported in the rear edge region.

8. The method for processing a substrate according to claim 1, wherein, The liquid treatment step is performed in a liquid treatment chamber, and the drying step is performed in a drying chamber. In the liquid processing chamber, the substrate on which the liquid processing has been completed is transferred to the drying chamber by a transfer robot.

9. An apparatus for processing a substrate, the apparatus comprising: A liquid processing chamber configured to process the substrate with the liquid by supplying the liquid to the substrate; A drying chamber configured to remove the liquid from the substrate; A transfer unit configured to transfer the substrate between the liquid processing chamber and the drying chamber; as well as A controller configured to control the liquid processing chamber, the drying chamber, and the transfer unit. The liquid processing chamber includes: A housing having an internal space; Support unit, the support unit being configured to support and rotate the substrate within the internal space; and A liquid supply unit configured to supply liquid to the upper surface of the substrate placed on the support unit. The liquid supply unit includes: A first liquid supply nozzle, configured to supply a first liquid to the substrate; and A second liquid supply nozzle, configured to supply a second liquid to the substrate, and The controller is configured as follows: The first liquid supply nozzle and the second liquid supply nozzle are controlled respectively to supply the first liquid to the substrate, and the second liquid is supplied to the substrate on which the first liquid has been supplied. The support unit is controlled such that, during the supply of the second liquid to the substrate, the rotational speed of the substrate is adjusted so that the second liquid supplied to the substrate flows only to the edge region of the substrate. The controller controls the support unit such that, during the supply of the second liquid to the substrate, the rotational speed of the substrate is changed from a first speed to a guiding speed that is slower than the first speed. The guiding speed is the speed at which the second liquid supplied to the substrate flows only to the upper edge region of the substrate. The guiding speed includes a first guiding speed and a second guiding speed that is slower than the first guiding speed. The controller controls the support unit such that the rotational speed of the substrate changes sequentially with the first speed, the first guide speed, and the second guide speed. The controller controls the second liquid supply nozzle to supply the second liquid to the substrate while the substrate rotates at the first speed, the first guide speed and the second guide speed.

10. The apparatus for processing a substrate according to claim 9, wherein, The controller controls the support unit such that the rotational speed of the substrate is changed to a second speed, which is slower than the first speed but faster than the guide speed, and lies between the first speed and the guide speed.

11. The apparatus for processing a substrate according to claim 10, wherein, The controller controls the second liquid supply nozzle to supply the second liquid to the substrate while the substrate is rotating at the second speed.

12. The apparatus for processing a substrate according to claim 9, wherein, The drying chamber includes a support member for supporting the substrate. The support member supports the rear edge region of the substrate on which the liquid treatment is performed.

13. The apparatus for processing a substrate according to any one of claims 9 to 12, wherein, In the drying chamber, the second liquid is removed from the substrate using a supercritical fluid, and The second liquid has a higher supercritical fluid solubility than the first liquid.

14. A method for processing a substrate, the method comprising the following steps: A liquid processing step, wherein the liquid processing step treats the substrate with the liquid by supplying liquid to the substrate in a liquid processing chamber; A transfer step, wherein the substrate treated with the liquid is transferred to a drying chamber; as well as A drying step, wherein the liquid is removed from the substrate treated with the liquid using a supercritical fluid in the drying chamber. The liquid processing steps include: A first liquid supply step, wherein the first liquid supply step supplies a first liquid to the upper surface of the rotating substrate; and The second liquid supply step involves supplying a second liquid to the upper surface of the rotating substrate. In the second liquid supply step, during the supply of the second liquid to the substrate, the rotational speed of the substrate changes from a first speed to a second speed slower than the first speed, from the second speed to a first guiding speed slower than the second speed, and from the first guiding speed to a second guiding speed slower than the first guiding speed, such that the second liquid supplied to the substrate is guided to flow only to the edge region of the upper surface, and In the second liquid supply step, the second liquid is supplied to the substrate while the substrate rotates at the first speed, the second speed, the first guide speed, and the second guide speed.

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