A substrate support structure and deposition apparatus, deposition method

Abstract

The present application provides a substrate support structure and a deposition device with the same, and designs a convex point layout for electrostatic adsorption, three rod holes are arranged in an equilateral triangle with the center of a base circle as the center, a convex point is arranged at the center of the base circle, three adjacent convex points not on the same straight line are arranged in an equilateral triangle, the line connecting two adjacent convex points is parallel to one side of the equilateral triangle formed by the three rod holes, and the distance between each two adjacent convex points is equal. Under the layout, the convex points are supported by three points, the local deformation of the substrate is small, the adsorption force is more uniform under the overall layout, the local collapse of the substrate caused by local temperature difference during the high-temperature process can be overcome, and the processing yield of the substrate is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a substrate support structure and a deposition device and a deposition method having the substrate support structure. Background Art

[0002] As wafer processing sizes continue to increase, deposition equipment such as CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) often utilize heating plates with electrostatic adsorption capabilities. These plates support the wafer and are equipped with electrostatic adsorption bumps, which help secure the wafer to the plate during the process. However, during the wafer preparation process, film stress can cause localized wafer collapse, disrupting normal wafer preparation. Summary of the Invention

[0003] In view of this, the purpose of the present invention is to provide a substrate support structure and a deposition device and a deposition method having the substrate support structure, which can improve the process problem of local collapse of the chip and improve the chip processing yield through the layout design of electrostatic adsorption points.

[0004] To achieve the above object, the present invention has the following technical solutions:

[0005] A substrate support structure includes a base, a rod hole on the base for a lifting rod to pass through, and a convex point on the base for electrostatic adsorption, wherein:

[0006] The number of the rod holes is three, and the three rod holes are arranged on a first circumference with the base as the center and distributed in an equilateral triangle;

[0007] There are multiple protrusions, a protrusion is set at the center of the heating base, three adjacent protrusions that are not on the same straight line are arranged in an equilateral triangle, and the line connecting two adjacent protrusions is parallel to one side of the equilateral triangle formed by the three rod holes, and the distance between each two adjacent protrusions is equal.

[0008] Optionally, the plurality of protrusions are arranged on the base within a second circumference with the base as the center, the diameter of the second circumference is smaller than the diameter of the substrate to be processed, and the diameter of the first circumference is smaller than the diameter of the second circumference.

[0009] Optionally, three convex points are formed around each rod hole, and the position of the center of the inscribed circle of an equilateral triangle formed by the line connecting the three convex points is the position of the corresponding rod hole.

[0010] Optionally, the ratio of the diameter of the first circle to the diameter of the substrate supported by the base is in the range of 0.6-0.87.

[0011] Optionally, the base is used to support a 300 mm substrate, and the diameter of the first circle ranges from 250 mm to 260 mm.

[0012] Optionally, the diameter of the second circle ranges from 293 mm to 297 mm.

[0013] Optionally, seven parallel rows of protrusions are distributed within the radius of the first circle.

[0014] Optionally, the base is used to support a 300 mm substrate, the diameter of the first circle is 254 mm, and the distance between two adjacent protrusions is 20 mm.

[0015] Optionally, the base is used to support a 300 mm substrate, and the diameter of the first circle ranges from 175 mm to 185 mm.

[0016] Optionally, the diameter of the second circle ranges from 293 mm to 297 mm.

[0017] Optionally, the base is used to support a 300 mm substrate, the diameter of the first circle is 180 mm, and the distance between two adjacent protrusions is 19.49 mm.

[0018] Optionally, the bumps are made of insulating material.

[0019] Optionally, the insulating material is ceramic.

[0020] Optionally, the base is made of ceramic material.

[0021] Optionally, the diameter of the protrusion ranges from 0.5 mm to 1 mm.

[0022] A deposition device comprises a reaction chamber and any one of the above-mentioned substrate support structures arranged in the reaction chamber.

[0023] A deposition method is provided, wherein a substrate is processed in the above-mentioned deposition equipment.

[0024] The substrate support structure and deposition equipment having the substrate support structure provided by the embodiments of the present invention are designed to layout the bumps for electrostatic adsorption, and the three rod holes are arranged in an equilateral triangle with the center of the base as the center. At the same time, a bump is set at the center of the base, and three adjacent bumps that are not on the same straight line are arranged in an equilateral triangle, and the line connecting two adjacent bumps is parallel to one side of the equilateral triangle formed by the three rod holes. The distance between each adjacent bump is equal. Under this layout, the bumps are supported at three points, so that the local deformation of the substrate is small. At the same time, under this overall layout, the adsorption force is more uniform, which can overcome the problem of local collapse of the substrate caused by local temperature difference during high-temperature process and improve the substrate processing yield.

[0025] Furthermore, the area outside the rod holes is also provided with bumps, with three bumps formed around each rod hole. The center of the inscribed circle of the equilateral triangle formed by the line connecting the three bumps corresponds to the location of the corresponding rod hole. This ensures that the lever arm used to lift the substrate is equal. After the base is electrostatically attracted or released, the lifting force does not vary due to different torques, thus preventing offset or jitter when lifting the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 A schematic top view of a substrate support structure according to an embodiment of the present invention is shown;

[0028] Figure 2 A schematic top view of a substrate support structure according to another embodiment of the present invention is shown. DETAILED DESCRIPTION

[0029] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0030] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0031] refer to Figure 1-2 As shown, an embodiment of the present invention provides a substrate support structure, including a base 100, a rod hole 110 on the base 100 for the lifting rod to pass through, and a bump 120 on the base 100 for electrostatic adsorption, wherein:

[0032] There are three rod holes 110 , and the three rod holes 110 are arranged on a first circle R1 with the base 100 as the center and are distributed in an equilateral triangle.

[0033] A bump 120 is provided at the center of the heating base 100. Three adjacent bumps 120 that are not on the same straight line are arranged in an equilateral triangle, with the line connecting two adjacent bumps parallel to one side of the equilateral triangle formed by the three rod holes. The spacing between each two adjacent bumps is equal. In the embodiment of the present invention, the rod holes and the bump layout design for electrostatic adsorption provide a three-point support for the bumps, minimizing local deformation of the substrate. This overall layout also provides a more uniform adsorption force, overcoming the problem of localized substrate collapse caused by local temperature differences during high-temperature processes and improving substrate processing yield.

[0034] The substrate support structure of the embodiment of the present invention is applied to semiconductor equipment to support the substrate during substrate processing. The substrate may be, for example, a silicon wafer, etc., and can be particularly applied to deposition equipment, such as PECVD (Plasma Enhanced CVD) or ALD equipment.

[0035] The susceptor 100 is a support structure for the wafer. The susceptor 100 may be a heatable susceptor used to control the temperature of the substrate during processing. Heating methods, such as gas heating, liquid heating, or resistance heating, may be employed. Heating may be performed using zone heating or other suitable methods, such as annular heating or sector heating. The susceptor may be made of a dielectric material, such as a ceramic susceptor.

[0036] A rod hole 110 is provided on the base 100. The rod hole 110 is used for a lift pin to pass through. The lift pin is a retractable structure. When placing or removing a substrate, the lift pin passes through the rod hole 110 to lift the substrate so that the robot can place or remove the wafer. When processing the substrate, the lift pin retracts from the rod hole 110 into the base 100.

[0037] The base 100 provides an electrostatic adsorption function. Adsorption electrodes can be provided within the base 100. Bumps 120 for electrostatic adsorption are provided on the base 100. After the rod hole 110 is retracted into the base 100, the substrate 200 is adsorbed onto the bumps 120 via electrostatic force. In this embodiment of the present invention, the bumps 120 are evenly distributed on the surface of the base 100 and have substantially uniform heights, ranging from 10 to 50 μm, for example. The bumps can be made of a dielectric insulating material, such as a ceramic base.

[0038] In an embodiment of the present invention, the distribution of the protrusions 120 is associated with the layout of the rod holes 110. There are three rod holes 110, and these three rod holes 110 are arranged on a first circumference R1 centered on the base 100 in an equilateral triangle arrangement. The rod holes 110 are symmetrically distributed around the center, providing stable support. Furthermore, the distribution of the protrusions 120 is parallel to the three sides of the triangle formed by the positions of the rod holes 110. A protrusion 120 is positioned at the center of the heating base 100. Three adjacent protrusions 120 that are not on the same straight line are arranged in an equilateral triangle arrangement, and the line connecting two adjacent protrusions is parallel to one side of the equilateral triangle formed by the three rod holes. The spacing between each pair of adjacent protrusions is equal.

[0039] It should be noted that the adjacent convex points in the present invention refer to adjacent points with the same spacing, for example Figure 1 The salient points 1101 and 1102 within the center dotted circle are adjacent points, while the salient points 1101 and 1103 are not adjacent points.

[0040] Specifically, when arranging the convex points 110, the convex point 120 at the center of the base 100 is used as the initial point, and the convex points are arranged in an equilateral triangle around it, and every two adjacent convex points around it and the initial point form an equilateral triangle, such as Figure 1 As shown, six bumps are arranged in a circle around the center bump. These six bumps are arranged so that every three adjacent bumps 120 that are not on the same straight line are arranged in an equilateral triangle, and the bumps 120 are arranged at equal intervals, and the line connecting every two adjacent bumps 120 is parallel to one side of the equilateral triangle formed by the three rod holes 110. Similarly, the bumps are arranged around these six bumps, and the bumps are arranged in a triangular shape around each bump until they are arranged to the appropriate position on the base. Ultimately, the three adjacent bumps in adjacent rows / columns on the base are arranged in an equilateral triangle. Overall, in the three directions of the three sides of the triangle formed by the rod holes 110, the bumps are arranged in an equilateral triangle arrangement parallel to each side. Under this overall layout, the distance between the bumps can be reduced, the adsorption force is more uniform, and the problem of local collapse of the substrate caused by local temperature differences during high-temperature processes can be overcome, thereby improving the substrate processing yield.

[0041] In an embodiment of the present invention, a plurality of protrusions 120 are arranged on the base within a second circumference R2 centered on the base 100. The diameter of the second circumference R2 is smaller than the diameter of the substrate 200 to be processed. The diameter of the first circumference R1, where the rod hole 110 is located, is smaller than the diameter of the second circumference R2. Thus, the protrusions 120 are also arranged around the rod hole 110, which further promotes uniform stress distribution around the rod hole, preventing deviation or jitter when lifting the substrate.

[0042] Better yet, refer to Figure 1As shown, three protrusions 120 are formed around each rod hole 110. The center of the inscribed circle of the equilateral triangle formed by the line connecting these three protrusions 120 corresponds to the location of the corresponding rod hole 110. In other words, the location of the rod hole 110 corresponds to the center of the inscribed circle of the equilateral triangle formed by the three protrusions 120 surrounding it. This ensures that the lever arm used to lift the substrate is equal. After the base undergoes electrostatic attraction or release, the lifting force does not vary due to different torques, thus preventing offset or jitter when lifting the substrate.

[0043] The position of the rod hole 110 is related to the position of the substrate 200 supported by the base 100. In some embodiments, the ratio of the diameter of the first circle where the rod hole 110 is located to the diameter of the substrate 200 can be in the range of 0.6-0.87. In some applications, the base is used to support a 300mm substrate. The diameter r1 of the first circle R1 can be in the range of 250mm-260mm, and the diameter of the second circle R2 can be in the range of 293mm-297mm. Seven parallel rows of protrusions are distributed along the radius r1 of the first circle. Figure 2 shown.

[0044] In a preferred embodiment, reference Figure 2 As shown, the base 100 is used to support a 300mm substrate. The diameter of the first circle R1 where the rod hole 100 is located is 254mm. The spacing between adjacent bumps is 20mm. The bumps are arranged in a triangle with this spacing until the outer periphery of the rod hole. A triangular bump layout can be formed around the lifting hole and an inscribed circle with the rod hole as the center can be formed in the triangle. The bumps can be arranged within a circumference of 295mm. Under this layout, 199 bumps can be arranged.

[0045] In other applications, the base is used to support a 300mm substrate, the diameter r1 of the first circumference R1 can range from 175mm to 185mm, the diameter of the second circumference R2 can range from 293mm to 297mm, and six parallel rows of bumps are distributed within the radius r1 of the first circumference. Figure 1 shown.

[0046] In another preferred embodiment, reference Figure 1 As shown, the base 100 is used to support a 300mm substrate. The diameter of the first circle R1 where the rod hole 100 is located is 180mm, and the spacing between adjacent bumps is 19.49mm. The bumps are arranged in a triangle with this spacing until the outer periphery of the rod hole. A triangular bump layout can be formed around the lifting hole and an inscribed circle with the rod hole as the center can be formed in the triangle. The bumps can be arranged within a circumference of 295mm. Under this layout, 199 bumps can be arranged.

[0047] In the embodiment of the present invention, the diameter of the bump may be in the range of 0.5 mm to 1 mm.

[0048] The above is a detailed description of the substrate support structure of the embodiment of the present invention. It can be understood that the dimensions mentioned in the above substrate support structure are ideal dimensions. In actual applications, due to tolerable errors in manufacturing or measurement, the actual parameters may be slightly different.

[0049] In addition, the present invention also provides a deposition device, which includes a reaction chamber and the above-mentioned substrate support structure arranged in the reaction chamber.

[0050] In addition, the present invention also provides a deposition method, which utilizes the deposition equipment to perform a preparation process.

[0051] The above description is only a preferred embodiment of the present invention. Although the present invention has been disclosed as a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present invention without departing from the scope of the technical solution of the present invention, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of protection of the technical solution of the present invention.

Claims

1. A substrate support structure, which is used in a deposition device, characterized in that: It includes a base, a rod hole on the base for the lifting rod to pass through, and a convex point on the base for electrostatic adsorption. The base is a heatable base, wherein: The number of the rod holes is three, and the three rod holes are arranged on a first circumference with the base as the center and distributed in an equilateral triangle; There are multiple convex points, one convex point is set at the center of the heating base, and three adjacent convex points that are not on the same straight line are arranged in an equilateral triangle, and the line connecting two adjacent convex points is parallel to one side of the equilateral triangle formed by the three rod holes, and the distance between each two adjacent convex points is equal; The plurality of protrusions are arranged on the base within a second circumference with the base as the center, the diameter of the second circumference is smaller than the diameter of the substrate to be processed, and the diameter of the first circumference is smaller than the diameter of the second circumference; Three convex points are formed around each rod hole, and the position of the center of the inscribed circle of an equilateral triangle formed by the connecting line of the three convex points is the position of the corresponding rod hole.

2. The substrate support structure according to claim 1, wherein: The ratio of the diameter of the first circle to the diameter of the substrate supported by the base is in the range of 0.6-0.

87.

3. The substrate support structure according to claim 2, wherein: The base is used to support a 300mm substrate, and the diameter of the first circle ranges from 250mm to 260mm.

4. The substrate support structure according to claim 3, wherein: The diameter of the second circle ranges from 293 mm to 297 mm.

5. The substrate support structure according to claim 4, characterized in that: Seven parallel rows of convex dots are distributed within the radius of the first circle.

6. The substrate support structure according to claim 1, wherein: The base is used to support a 300mm substrate, the diameter of the first circle is 254mm, and the distance between two adjacent protrusions is 20mm.

7. The substrate support structure according to claim 1, wherein: The base is used to support a 300mm substrate, and the diameter of the first circle ranges from 175mm to 185mm.

8. The substrate supporting structure according to claim 7, wherein: The diameter of the second circle ranges from 293 mm to 297 mm.

9. The substrate supporting structure according to claim 1, wherein: The base is used to support a 300mm substrate, the diameter of the first circle is 180mm, and the distance between two adjacent protrusions is 19.49mm.

10. The substrate support structure according to any one of claims 1 to 9, characterized in that: The convex points are made of insulating material.

11. The substrate support structure according to claim 10, wherein: The insulating material is ceramic.

12. The substrate supporting structure according to claim 11, wherein: The base is made of ceramic material.

13. The substrate support structure according to any one of claims 1 to 9, characterized in that: The diameter of the protrusions ranges from 0.5 mm to 1 mm.

14. A deposition device, characterized in that: The invention comprises a reaction chamber and a substrate supporting structure according to any one of claims 1 to 13 arranged in the reaction chamber.

15. A deposition method, characterized in that: The processing of the substrate is carried out in a deposition apparatus as claimed in claim 14.

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