Etching-resistant hemispherical resonator spherical interdigital electrode structure

By etching interdigital electrode pairs on the spherical interdigital electrode structure of the hemispherical resonator and setting up through-holes to fill with silver paste, the frequency splitting problem caused by the uneven mass of the resonator is solved, and the stability and service life of the electrode connection are improved.

CN116358511BActive Publication Date: 2025-10-24CHINA ELECTRONICS TECH GRP NO 26 RES INST
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Patent Information

Application Number
CN202310467010.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-04-27
Publication Date
2025-10-24
Estimated Expiration
2043-04-27

AI Technical Summary

Technical Problem

After being processed into a hemispherical shape, the resonator of a hemispherical resonant gyroscope has uneven mass due to geometric deviation, which causes the resonant mode frequency to split and leads to system drift. Existing technologies are difficult to effectively solve this problem.

Method used

An etching-resistant spherical interdigital electrode structure for a hemispherical resonator is designed. By etching positive and negative interdigital electrode pairs on the interdigital electrode metal layer, through-holes are set at the junction of the strip and the slot-shaped notch and silver paste is poured into them to ensure the reliability of the electrode connection.

Benefits of technology

The service life of the spherical interdigitated electrode structure of the hemispherical resonator is improved, the electrode disconnection caused by etching is prevented, and the stability of the electrode connection and the reliability of signal transmission are ensured.

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Abstract

The application belongs to the technical field of hemispherical resonator gyroscopes, and particularly relates to a hemispherical resonator spherical interdigital electrode structure capable of preventing etching. The hemispherical resonator spherical interdigital electrode structure comprises a spherical ring base and an interdigital electrode metal layer, the interdigital electrode metal layer is wrapped on the outer spherical surface of the spherical ring base, a groove-shaped notch is formed in the bottom of the spherical ring base, a metal film layer is plated on the surface of the groove-shaped notch, and the groove-shaped notch plane is disconnected with the metal film layer on the side surface; the interdigital electrode metal layer is etched with a positive interdigital electrode pair and a negative interdigital electrode pair, the positive interdigital electrode pair and the negative interdigital electrode pair have the same structure and are both two identical interdigital electrode patterns; the interdigital electrode pattern comprises an interdigital portion and two strips, each strip is connected with the groove-shaped notch; a through hole is arranged at the connection position of the strip of the interdigital electrode pattern and the groove-shaped notch, and the through hole is filled with silver paste; when the outer spherical surface is etched and disconnected with the connection of the interdigital electrode pair and the groove-shaped notch due to some reasons, the through hole can be used to connect through the inner cylindrical surface, so that the etching prevention effect is achieved.
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Description

Technical Field

[0001] The invention belongs to the technical field of hemispherical resonator gyroscopes, and in particular relates to an anti-etching spherical interdigital electrode structure of a hemispherical resonator. Background Art

[0002] As a new type of angle measurement sensor with high precision, high reliability and long life, the hemispherical resonant gyroscope has received deep attention and systematic research internationally in recent decades, and is widely used in aerospace, strategic and tactical weapons and other fields.

[0003] As the core component of a hemispherical resonator gyroscope (HRG), the hemispherical resonator (HRG) senses external angles or angular velocities. Its accuracy directly impacts the measurement and navigation accuracy of the HRG sensor. The resonator is typically made of high-Q fused quartz. After being processed into a hemispherical shape, geometric deviations can occur to varying degrees, resulting in mass inhomogeneity. This mass inhomogeneity can cause frequency splitting in the resonant mode during operation, leading to significant system drift in the HRG. Special electrodes can be used to drive and detect the subtle vibrations of the HRG. The resulting vibrations, reflected on an oscilloscope, can characterize these inhomogeneities. Finding equivalent points for adjusting these inhomogeneities through specific patterns provides a powerful basis for balancing the HRG's mass. Summary of the Invention

[0004] In response to the shortcomings of the existing technology, the present invention proposes an anti-etching hemispherical resonator spherical interdigitated electrode structure, comprising: a spherical ring base and an interdigitated electrode metal layer; the interdigitated electrode metal layer is wrapped on the outer spherical surface of the spherical ring base; the bottom of the spherical ring base is provided with 10 evenly distributed groove-shaped notches, the surface of the groove-shaped notches is plated with a metal film layer and the plane of the groove-shaped notch is disconnected from the metal film layer on the side, and the metal film layer is connected to both the inner and outer spherical surfaces of the spherical ring base.

[0005] Preferably, a positive interdigital electrode pair and a negative interdigital electrode pair are etched on the interdigital electrode metal layer; the positive interdigital electrode pair is located directly opposite the negative interdigital electrode pair; the positive interdigital electrode pair and the negative interdigital electrode pair have the same structure, both being two identical interdigital electrode patterns.

[0006] Furthermore, the central angle formed by the centers of the two identical interdigital electrode patterns and the center of the ball ring base is 45 degrees.

[0007] Furthermore, the interdigitated electrode pattern includes an interdigitated portion and two strips, and each strip is connected to the plane of the slot-shaped notch.

[0008] Furthermore, a through hole is provided at the connection between the strip of the interdigitated electrode pattern and the slot-shaped notch, and silver paste is poured into the through hole.

[0009] Preferably, the inner spherical surface of the ball ring base is provided with an annular table.

[0010] Preferably, the material of the ball ring base is fused quartz.

[0011] The beneficial effects of the present application are: the half-sphere resonator spherical interdigital electrode structure designed in the present application fixes the interdigital electrode metal layer on the ball ring base, etches the positive interdigital electrode pair and the negative interdigital electrode pair on the interdigital electrode metal layer, sets through holes at the connection between the interdigital electrode pattern strips of the positive interdigital electrode pair and the negative interdigital electrode pair and the slot-shaped notches of the ball ring base, and fills silver paste in the through holes, so that the interdigital electrode pair can be connected to the slot-shaped notches not only through the outer spherical surface, but also through the inner spherical surface via the through holes. When the connection between the interdigital electrode pair and the slot-shaped notches is disconnected due to etching of the outer spherical surface for some reason, the interdigital electrode pair can also be connected via the inner cylindrical surface through the through holes, thereby achieving the effect of preventing etching. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 Fig. 1 is a schematic diagram of the half-sphere resonator spherical interdigital electrode structure in the present application;

[0013] Figure 2 Fig. 2 is an expanded schematic diagram of the interdigital electrode metal layer in the present application. DETAILED DESCRIPTION

[0014] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the scope of protection of the present application.

[0015] The present application provides a half-sphere resonator spherical interdigital electrode structure for preventing etching, as shown in Fig. 1, which comprises a ball ring base 1 and an interdigital electrode metal layer 2; the interdigital electrode metal layer 2 is wrapped on the outer spherical surface of the ball ring base; the bottom of the ball ring base is provided with 10 evenly distributed slot-shaped notches 11, the surface of the slot-shaped notches 11 is plated with a metal film layer, and the metal film layer on the plane and the side surface of the slot-shaped notches is disconnected to avoid the grounding part from being connected to the signal part, the metal film layer is in communication with the inner and outer spherical surfaces of the ball ring base, and a wire can be welded. Figure 1 Preferably, as shown in Fig. 2, the interdigital electrode metal layer 2 is wrapped on the outer spherical surface of the ball ring base 1, and the bottom of the ball ring base 1 is provided with 10 evenly distributed slot-shaped notches 11.

[0016] Figure 2 ​As shown, a positive interdigital electrode pair and a negative interdigital electrode pair are etched on the interdigital electrode metal layer 2; the positive interdigital electrode pair is located directly opposite the negative interdigital electrode pair. The positive interdigital electrode pair and the negative interdigital electrode pair have the same structure, each containing two identical interdigital electrode patterns 21. The two interdigital electrode patterns 21 of the interdigital electrode pair represent the X and Y signals, respectively. The positive interdigital electrode pair is used to excite and control the X and Y vibrations of the hemispherical resonator, while the negative interdigital electrode pair, located directly opposite the positive interdigital electrode pair, is used to detect the X and Y vibrations directly opposite the spherical shell of the hemispherical resonator.

[0017] Preferably, the central angle formed by the centers of the two identical interdigital electrode patterns and the center of the spherical ring base is 45 degrees.

[0018] Preferably, the interdigitated electrode pattern includes an interdigitated portion 211 and two strips 212 , and each strip 212 is connected to the plane of the slot-shaped notch 11 .

[0019] Preferably, a through hole 13 is provided at the junction of the strip of the interdigital electrode pattern 21 and the slot-shaped notch 11, and silver paste is poured into the through hole. By providing a through hole at the junction of the strip and the slot-shaped notch and pouring silver paste into the through hole, if the outer spherical surface is etched for some reason and the connection between the interdigital electrode pair and the slot-shaped notch is disconnected, the through hole can be used to connect the internal cylindrical surface, thereby preventing etching and thereby improving service life.

[0020] Preferably, the inner spherical surface of the spherical ring base 1 is provided with an annular table 12. By providing this structure, the hemispherical resonator can be fixed, which facilitates electrode driving and detection of weak vibrations of the hemispherical resonator.

[0021] Preferably, the material of the ball ring base 1 is fused quartz.

[0022] The spherical interdigital electrode structure of the hemispherical resonator designed by the present invention fixes an interdigital electrode metal layer on a spherical ring base, etches a positive interdigital electrode pair and a negative interdigital electrode pair on the interdigital electrode metal layer, and provides through holes at the connection between the interdigital electrode pattern strips of the positive interdigital electrode pair and the negative interdigital electrode pair and the groove-shaped notch of the spherical ring base. Silver paste is poured into the through holes, so that the interdigital electrode pairs can not only be connected directly to the groove-shaped notch from the outer spherical surface, but also connected to the groove-shaped notch through the through holes through the inner spherical surface. If the outer spherical surface is etched for some reason and the connection between the interdigital electrode pair and the groove-shaped notch is disconnected, it can still be connected through the through holes through the inner cylindrical surface, which has an anti-etching effect.

[0023] The above embodiments further illustrate the purpose, technical solutions and advantages of the present invention in detail. It should be understood that the above embodiments are only preferred implementation plans of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made to the present invention within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An etch-resistant hemispherical resonator sphere interdigital electrode structure, characterized by, The application relates to a ball ring base and an interdigital electrode metal layer; the interdigital electrode metal layer is wrapped on the outer spherical surface of the ball ring base. The bottom of the ball ring base is provided with ten uniformly distributed slot-shaped notches, the surface of the slot-shaped notches is plated with a metal film layer, the metal film layer on the plane of the slot-shaped notches is disconnected with the metal film layer on the side surface, the metal film layer is communicated with the inner and outer spherical surfaces of the ball ring base; the interdigital electrode metal layer is etched with a positive interdigital electrode pair and a negative interdigital electrode pair; the positive interdigital electrode pair is located opposite the negative interdigital electrode pair; the positive interdigital electrode pair and the negative interdigital electrode pair have the same structure and are both two identical interdigital electrode patterns; the interdigital electrode pattern comprises an interdigital portion and two strips, each strip is connected with the plane of the slot-shaped notch; a through hole is arranged at the connection position of the strip of the interdigital electrode pattern and the slot-shaped notch, and the through hole is filled with silver paste. The central angle formed by the centers of the two identical interdigital electrode patterns and the center of the ball ring base is 45 degrees.

2. The etch-resistant hemispherical resonator (HR) spherical interdigital electrode structure of claim 1, wherein, The inner spherical surface of the ball ring base is provided with an annular platform.

3. The etch-resistant hemispherical resonator (HRS) spherical interdigital electrode structure of claim 1, wherein, The material of the ball ring base is fused quartz.

4. The etch-resistant hemispherical resonator (HR) spherical interdigital electrode structure of claim 1, wherein, ​

Citation Information

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