Fluorene-based small molecule-based organic field effect transistor memory and method of manufacturing the same

Abstract

The application discloses a kind of based on fluorenyl small molecule molecular field effect transistor memory and preparation method thereof, belong to information storage technical field.The charge capture layer of the memory is made into single film by the way of solution processing after being made by fluorenyl small molecule material 3Ph-TrH, and the spiro structure of small molecule material 3Ph-TrH effectively increases steric hindrance, inhibits the effect of charge leakage, with excellent hole trapping capacity and electron trapping capacity, so that memory device shows bipolar storage (42.8V), high stability, good resistance and other excellent performance, the mobility of the single-molecule thin film device reaches 0.35cm 2 V ‑1 s ‑1 , switch ratio exceeds 10 5 , higher maintenance performance;In addition, the preparation process of the memory device is simple, can greatly reduce production cost, is conducive to the popularization and application of this kind of device.

Description

Technical Field

[0001] This invention relates to the field of information storage technology, specifically to an organic field-effect transistor memory based on fluorene-based small molecules and its fabrication method. Background Technology

[0002] The progress and development of human society are inseparable from the continuous exploration and application of advanced materials and technologies. Currently, we are in the era of explosive information growth—the era of big data—and will gradually enter the era of artificial intelligence. Organic electronic materials have become a crucial cornerstone for the development of modern industry and high technology, and an indispensable guarantee for high-tech industries and national security. Since Japanese scientist Tsumura reported the first organic field-effect transistor (OFET) in 1986, research on the organic electronics industry has received considerable international attention. OFET non-volatile memory is a device that adds a charge trapping layer between the semiconductor channel and the gate to control charge capture and release, thereby enabling data writing and reading. Compared to traditional non-field-effect transistor memories, OFET non-volatile memories have superior performance, low production costs, small investment scale, and are environmentally friendly, making them one of the ideal memories for next-generation information technology.

[0003] The ability of charge-trapping layer materials to capture and release charge is a key factor in generating storage phenomena and increasing read / write / erase cycles and duration. Polymer materials, such as conjugated polymers and polymer composites, have been widely used as charge-trapping layer materials and successfully applied in OFET non-volatile memories. However, the low molecular weight and indeterminate structure of polymers greatly increase the difficulty of device fabrication, easily leading to defects in the thin film dielectric. Furthermore, the complex stacking morphology of polymer chains in the thin film makes it difficult to understand the charge conduction mechanism within the film. In contrast, using small molecule materials as dielectric materials is more conducive to explaining the storage mechanism and can effectively suppress charge leakage while increasing charge storage density through molecular design. In addition, organic small molecule materials have advantages such as ease of synthesis, well-defined electronic structure, and tunable band gap, thus attracting much attention in this field in recent years. However, there are relatively few small molecule materials currently used in field-effect transistor memories, and they are mostly concentrated in unipolar memory, making it difficult to achieve high-performance bipolar memory.

[0004] To address the aforementioned issues, those skilled in the art have attempted to fabricate a class of high-performance field-effect transistor devices based on structurally stable fluorene-based small molecule materials. For example, Chinese patent CN 115249767 A discloses a floating-gate organic field-effect transistor memory based on fluorenone derivative small molecules and its fabrication method. It utilizes fluorenone derivative small molecules (TFO) to solve the problem of achieving bipolar storage and simplifying device fabrication processes. However, its shortcomings lie in the low rigidity and low steric hindrance of this small molecule material. When applied to field-effect transistor memories, its hole trapping and electron trapping capabilities still need further improvement. Summary of the Invention

[0005] To address the problems existing in the prior art, this invention provides an organic field-effect transistor memory based on the fluorene-based small molecule material 3Ph-TrH and its fabrication method. This small molecule material has an H-type structure, and the introduction of double-spiral ring structures on both sides effectively increases the steric hindrance. When applied as a charge trapping layer in an OFET memory device, it can suppress charge leakage and exhibit excellent hole and electron trapping capabilities. This memory not only achieves bipolar storage but also possesses high mobility and a conductivity exceeding 10^6. 5 It has a high switching ratio and high sustaining performance.

[0006] To achieve the above-mentioned technical objectives, the present invention is implemented through the following technical solution: an organic field-effect transistor memory based on fluorene-based small molecules, comprising, from bottom to top, a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer, and source / drain electrodes. The charge trapping layer is composed of a single thin film made of fluorene-based small molecule material 3Ph-TrH through solution processing. The structural formula of 3Ph-TrH is as follows:

[0007]

[0008] Furthermore, this memory achieves bipolar storage with a mobility of 0.35 cm⁻¹. 2 V -1 s -1 The on / off ratio exceeds 10 5 .

[0009] The fabrication method of the organic field-effect transistor memory based on fluorene small molecules is as follows:

[0010] 1) Dissolve the fluorenyl small molecule 3Ph-TrH in an organic solvent, heat or sonicate, and let stand overnight;

[0011] 2) The substrate, gate electrode, and gate insulating layer constitute the substrate. The substrate is pretreated and then placed in an ultraviolet ozone generator for treatment.

[0012] 3) Spin-coat the 3Ph-TrH solution prepared in step 1) onto the substrate treated in step 2), and anneal it to obtain a charge trapping layer;

[0013] 4) A semiconductor layer and source / drain electrodes are sequentially vacuum-deposited onto the charge trapping layer.

[0014] Further, in step 4), the evaporation rate of the vacuum-deposited organic semiconductor layer is... Vacuum degree controlled at 6*10 -5 pa-6*10 -4 pa; the rate of vacuum evaporation of source and drain electrodes Vacuum degree controlled at 6*10 -5 pa-6*10 -4 pa.

[0015] Further, the organic solvent mentioned in step 1) is toluene, and the concentration of the solution prepared by dissolving 3Ph-TrH in the organic solvent is 3-5 mg / mL.

[0016] Furthermore, the gate electrode is made of one of highly doped silicon, aluminum, copper, gold, or silver; the gate insulating layer is made of one of silicon dioxide, aluminum oxide, or polystyrene, and the thickness of the gate insulating layer is 50-300 nm.

[0017] Furthermore, the thickness of the charge trapping layer obtained in step 3) is 10-30 nm.

[0018] Furthermore, the organic semiconductor layer is made of one of the following materials: pentaphenyl, tetraphenyl, copper phthalocyanine, fluorinated copper phthalocyanine, red fluorene, triphenyl, and 3-hexylthiophene. The organic semiconductor layer thin film is deposited on the surface of the charge trapping layer, and the thickness of the organic semiconductor layer is 30-50 nm.

[0019] Furthermore, the source electrode and drain electrode are made of metal or organic semiconductor materials, and the thickness of the source electrode and drain electrode is 50-100nm. There is an organic semiconductor conductive channel between the source electrode and drain electrode.

[0020] The beneficial effects of this invention are as follows:

[0021] 1. This application synthesizes a novel fluorene-based small molecule material 3Ph-TrH. Its rigid spirocyclic structure endows the material with high stability and can effectively increase steric hindrance, which provides the possibility of improving device performance. Subsequent thermogravimetric analysis also confirmed that this type of molecule has good thermal stability and electrochemical stability.

[0022] 2. When the fluorene-based small molecule material 3Ph-TrH disclosed in this application is used as a charge trapping layer in an organic field-effect transistor memory device, the charge leakage can be effectively suppressed due to the effect of the spiral ring structure in the material, so that the charge trapping layer has excellent hole trapping and electron trapping capabilities. The memory device prepared in this application exhibits excellent performance such as bipolar storage, high on / off ratio, high stability, and good tolerance.

[0023] 3. The single-molecule thin-film device prepared in this application not only achieves bipolar storage (42.8V) but also exhibits high mobility (0.35cm). 2 V -1 s -1 (Switching ratio exceeding 10) 5 It maintains high performance;

[0024] 4. The organic field-effect transistor memory disclosed in this application has a relatively simple device structure. It is prepared by a combination of conventional processes such as annealing, spin coating, and vapor deposition. The charge trapping layer is made by solution processing, which not only effectively simplifies the preparation process and reduces production costs, but also facilitates the commercialization of such organic memory devices in the future. Attached Figure Description

[0025] Figure 1 The hydrogen spectrum of the fluorenyl small molecule 3Ph-TrH prepared in Example 1;

[0026] Figure 2 The carbon spectrum of the fluorenyl small molecule 3Ph-TrH prepared in Example 1;

[0027] Figure 3 The thermogravimetric curve of the fluorenyl small molecule 3Ph-TrH prepared in Example 1;

[0028] Figure 4 The DSC curve of the fluorenyl small molecule 3Ph-TrH prepared in Example 1 is shown below.

[0029] Figure 5 This is a schematic diagram of the organic field-effect transistor memory fabricated in Example 1, wherein 1-substrate, 2-gate insulating layer, 3-3Ph-TrH charge trapping layer, 4-semiconductor layer, and 5-source / drain electrode;

[0030] Figure 6 This is a negative memory diagram of the organic field-effect transistor memory prepared in Example 1;

[0031] Figure 7 This is a forward memory diagram of the organic field-effect transistor memory prepared in Example 1;

[0032] Figure 8The positive sustaining characteristic curve of the organic field-effect transistor memory prepared in Example 1;

[0033] Figure 9 The curves show the forward read / write / erase cycle characteristics of the organic field-effect transistor memory prepared in Example 1. Detailed Implementation

[0034] The following embodiments further illustrate the content of the present invention, but should not be construed as limiting the present invention. Any modifications and substitutions made to the methods, steps, or conditions of the present invention without departing from the essence of the invention are within the scope of the present invention.

[0035] Example 1

[0036] 1. Preparation of a fluorene-based small molecule material 3Ph-TrH

[0037] The specific preparation route is as follows:

[0038]

[0039] The organic solvents shown in the flowchart are specifically one or more of dichloromethane, toluene, acetone, tetrahydrofuran, 1,4-dioxane, boron trifluoride ether, or tritert-butylphosphine.

[0040] The base can be one or more of K2CO3 (potassium carbonate), KF (potassium fluoride), KOAc (potassium acetate), and NH4Cl (ammonium chloride);

[0041] The catalyst can be one or more of Pd(dba)2 (tris(dibenzylacetone)palladium), Pd(dppf)Cl2 (1,1'-bis(diphenylphosphino)ferrocene]palladium dichloride), and Pd(PPh3)4 (tetraphenylphosphine palladium).

[0042] The specific synthesis process is as follows:

[0043] 1) Preparation of Compound 2: The apparatus, which had been cleaned and dried overnight in an oven, was removed and sealed with a stopper and sealing film. Weighed Mg scrap (5.96 g, 0.249 mol, 3 eq) and a grain of iodine were placed into the reaction apparatus. The apparatus was evacuated three times with nitrogen. A small amount of bromobenzene (32.5 g, 0.207 mol, 2.5 eq) and tetrahydrofuran (THF) were added to the reaction flask using a syringe. The reaction was initiated using a blower (the reaction was successful when the blackish-purple color in the flask turned colorless; otherwise, it failed). The flask was then placed in an ice-water bath, and the remaining bromobenzene and THF (25 mL) solution were slowly added. The mixture was then reacted in a 60°C oil bath for 2-3 hours.

[0044] Wrap a 500mL reaction flask with aluminum foil (to protect from light) and evacuate it three times with nitrogen (to ensure an N2 environment in the reaction flask and prevent catalyst deactivation). Then, quickly add the weighed Pd(dpa)2 (1g, 0.005mol, 0.06eq) to the reaction flask, and continue evacuating and purging with nitrogen three times. Next, slowly inject THF (100mL), 2,3-dibromothiophene (20g, 0.083mmol, 1eq), and tri-tert-butylphosphine (4.4g, 0.01mol, 0.12eq) into the reaction flask using a syringe, while simultaneously starting the stirrer. Place the reaction flask in an ice-water bath. Slowly inject the freshly prepared Grignard reagent using a syringe. After the Grignard reagent is added, continue to react in the ice-water bath. After 10 minutes, begin TLC monitoring. This reaction is relatively fast; if the reaction is prolonged, more byproducts will be generated. PE column chromatography yielded 14.1g of compound 2, with a yield of 68.86%.

[0045] 2) Preparation of compound 3: Product 2 (6 g, 25.38 mmol, 1 eq) and NBS (N-bromosuccinimide) (15.86 g, 88.83 mmol, 3.5 eq) and 90 mL of acetone were weighed and placed in a reaction flask (the entire apparatus should be kept in a light-protected environment, with aluminum foil used to shield it from light). The mixture was passed through a PE column to obtain 7.42 g of compound 3, with a yield of 74.2%.

[0046] 3) Preparation of Compound 4: Place an appropriate amount of Mg scrap (0.37 g, 15.2 mol, 2.5 eq) and one iodine grain into a reaction flask, and evacuate the flask three times with nitrogen. Weigh out Compound 3 (2 g, 5.07 mol, 1 eq), place it in a constant-pressure low-pressure funnel, and evacuate the flask three times with nitrogen. Dissolve Compound 3 completely in an appropriate amount of THF (approximately 30 mL). First, add a relatively concentrated solution of Compound 3 and THF dropwise, using a blower to initiate the reaction. Then, place the flask on a stirrer and slowly add the remaining THF / Compound 3 mixture using a constant-pressure dropping funnel (adding while blowing air to maintain a semi-boiling state to increase reactivity). After the addition is complete, react the mixture in a 65°C oil bath for 3 hours. The Grignard reagent is orange-yellow or brown. Concurrently with the preparation of Grignard reagent, 2,7-dibromofluorenone was placed in a 250 mL two-necked flask and evacuated with nitrogen three times. Then, 30 mL of THF was slowly injected into the reaction flask using a syringe. The mixture was stirred until 2,7-dibromofluorenone (2.92 g, 12.7 mol, 2.5 eq) was completely dissolved. The flask was then placed in an oil bath at 70 °C. Freshly prepared Grignard reagent was then slowly injected using a syringe. The reaction was allowed to proceed for 16 hours after the Grignard reagent was added. Column chromatography (PE:DCM = 1:2) yielded 2.09 g of compound 4; yield 45.29%.

[0047] 4) Preparation of compound 5: Compound 4 (1 g, 1.1 mol, 1 eq) was placed in a constant-pressure dropping funnel. 75 mL of dichloromethane (DCM) was added to the reaction flask, and the mixture was stirred. Boron trifluoride diethyl ether was quickly added to the reaction flask at room temperature. 25 mL of DCM was added to the constant-pressure dropping funnel to ensure complete dissolution of compound 4. The constant-pressure dropping funnel was then opened, and the mixture was allowed to drip at a rate of 1 d / s. The PE:DCM ratio was 4:1, and the solution was purified by column chromatography to obtain 0.77 g of compound 5; yield 81.4%.

[0048] 5) Preparation of compound 6: Take out the apparatus that has been washed and dried overnight in an oven and set it up. Seal the bottle mouth with a stopper and sealing film, leaving only one opening. Weigh out appropriate amounts of TBr-H (i.e., compound 5, 1g, 1.14mmol, 1eq), potassium acetate (1.2g, 10mmol, 11.4eq), and bis(pinacolyl)diboron OMDOB (2.4g, 9.45mmol, 8eq) into the reaction flask. Protect the flask from light with tin foil. Vacuum and purge with nitrogen three times. Then, under nitrogen atmosphere, quickly add the weighed catalyst 1,1'-bis(diphenylphosphino)ferrocene]palladium dichloride Pd(dppf)Cl2 (0.166g, 0.228mmol, 0.2eq) into the reaction flask. Seal the remaining reaction opening and continue to vacuum and purge with nitrogen three times. The reaction flask was then placed in an oil bath, the temperature was set to 100℃, cooling water was turned on, and 10 mL of 1,4-dioxane-1,4-DIO was added. The mixture was stirred, and once the temperature reached 100℃, tri-tert-butylphosphine was quickly added (to increase reactivity). The reaction was allowed to proceed for 12 hours. The product was then purified by column chromatography using PE:DCM = 1:3 (or PE:EA = 5:1), and recrystallized to obtain product TBO-H (compound 6) as a white solid (yield 0.629 g, 51.82%).

[0049] 1 HNMR (400MHz, CDCl3): δ (ppm) 8.09-8.07 (d, 2H), 7.83-7.75 (q, 8H), 7.47-7.44 (t, 2H), 7.29 (s, 4H), 7.07-7.03 (t, 2H), 6.67-6.65 (d, 2H).

[0050] 5) Preparation of compound 7 (i.e., 3Ph-TrH):

[0051]

[0052] In a dry 100 mL three-necked flask, the following compounds were weighed: borate ester TBO-H synthon (i.e., compound 6, 0.66 g, 0.62 mmol), 5'-bromo-m-terphenyl (1.55 g, 4.96 mmol), tetra(triphenylphosphine)palladium Pd(PPh3)4 (0.144 g, 0.124 mmol), potassium fluoride KF / potassium carbonate K2CO3 (8 mL, 4 mol / L), and toluene Tol / THF (20 mL). The reaction was carried out at 95 °C in the dark for 24 h. The reaction was quenched with water, and the combined organic phases were extracted with dichloromethane, dried over anhydrous magnesium sulfate, filtered, and the solvent was removed by rotary evaporation. The crude product was then separated by column chromatography (eluent: petroleum ether: dichloromethane = 2:1-4:1) to give 796 mg of white solid powder, i.e., compound 7, with a yield of 87.23%.

[0053] 1 HNMR (400MHz, CDCl3): δ (ppm) 8.13-8.09 (d, 2H), 7.87-7.85 (d, 4H), 7.65-7.62 (d, 4H), 7.55 (s, 4H), 7.52- 7.41((t,25H),7.32-7.27(d,15H),7.26-7.23(s,10H),7.16(s,4H),7.12-7.08(t,2H),6.83-6.81(d,2H).

[0054] Figure 1 and Figure 2 The figures show the proton and carbon spectra of the obtained fluorene-based material 3Ph-TrH, respectively, which allows us to determine the structure of the 3Ph-TrH molecule.

[0055] The thermal stability of the compound was tested using a thermogravimetric analyzer (TGA) under a nitrogen atmosphere. Figure 3 As can be seen, the decomposition temperature of 3Ph-TrH is 562℃, and it has high thermal stability. This is mainly due to the rigid spirocyclic structure in the molecule. The rigid structure also increases the steric hindrance. If this material is used as a charge trapping layer to prepare OFET memory, it can effectively suppress charge leakage.

[0056] Differential scanning calorimetry (DSC) is used to measure the phase transition temperature of molecules. The horizontal axis represents temperature, and the vertical axis represents the heat of molecular change. Figure 4 It can be seen that the DSC curve of 3Ph-TrH is stable, indicating that the molecule has good stability.

[0057] 2. Fabrication of organic field-effect transistor memory based on fluorene-based small molecule material 3Ph-TrH

[0058] The structure of the organic field-effect transistor memory is as follows: Figure 5As shown, from bottom to top, it includes a substrate and a gate electrode, a gate insulating layer, a charge trapping layer, an organic semiconductor layer, and source / drain electrodes based on the substrate.

[0059] The specific preparation steps are as follows (during the experiment, the laboratory temperature was maintained at approximately 25℃ and the humidity at 30%):

[0060] 1) Dissolve the 3Ph-TrH molecular material in toluene at a concentration of 3 mg / mL, heat or sonicate to fully dissolve it, and let it stand for 24 h to disperse it evenly;

[0061] 2) Using a heavily doped silicon wafer as the substrate and gate electrode, a gate insulating layer is prepared on the heavily doped silicon wafer by thermal growth. The substrate, gate electrode and gate insulating layer constitute the substrate. The thickness of the gate insulating layer film is 300 nm.

[0062] 3) The substrate is ultrasonically cleaned with acetone, ethanol and ultrapure water for 10 minutes each. The surface of the silicon wafer is dried with a high-purity nitrogen air gun to ensure that the surface of the silicon wafer is clean. Then the silicon wafer is dried in an oven at 120°C.

[0063] 4) Place the dried silicon wafers in an ultraviolet ozone generator for 5-10 minutes;

[0064] 5) Spin-coat the prepared 3Ph-TrH toluene solution onto the treated silicon wafer surface at a spin speed of 3000 r / min for 30 s to obtain a monolayer film. Then, place the spin-coated silicon wafer in a vacuum drying oven at 80 ℃ for annealing for 30 min.

[0065] 6) After annealing, the silicon wafer is deposited with an organic semiconductor layer using a vacuum evaporation machine, with the vacuum level controlled at 6*10. -4 Below pa, evaporation rate is The thickness of the pentacene was 35 nm; then the silicon wafer was removed, and multiple sets of masks were applied for simultaneous processing. Copper was vacuum-deposited as the source and drain electrodes, and the deposition rate was... The copper used as the source and drain electrodes has a thickness of approximately 60 nm.

[0066] Device data testing:

[0067] The electrical performance of the device was tested using a dual-channel digital source meter, Keithley 2636B. All electrical performance measurements were performed in air, achieving a mobility of 0.35 cm⁻¹. 2 V -1 s -1 On / off ratio exceeding 10 5 .

[0068] Figure 6The graph shows the measured characteristic curve of the negative memory window. As can be seen from the graph, with a write voltage of -100V, the negative memory window can reach 30V. After applying light for 1 second, it returns to its original position.

[0069] Figure 7 The graph shows the measured characteristic curve of the forward memory window. As can be seen from the graph, with a write voltage of 100V and light applied for 1 second, the forward memory window can reach 11.6V. When a voltage of -50V is applied, it returns to its original position.

[0070] Figure 8 The positive maintenance characteristic curve obtained is shown in the figure, at 10 4 Within s, the device exhibits stable maintenance characteristics.

[0071] Figure 9 For the positive read / write / erase cycle characteristic curve of the device test, at 10 4 The on / off ratio still exceeds 10 after s. 2 .

[0072] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. However, the above description is merely a specific embodiment of the present invention, and the technical features of the present invention are not limited thereto. Any other embodiments derived by those skilled in the art without departing from the technical solution of the present invention should be covered within the patent scope of the present invention.

Claims

1. An organic field-effect transistor memory based on fluorene-based small molecules, comprising, from bottom to top, a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, an organic semiconductor layer, and source / drain electrodes, characterized in that, The charge trapping layer consists of a single thin film made of fluorene-based small molecule material 3Ph-TrH through solution processing. The structural formula of 3Ph-TrH is as follows: ； This memory achieves bipolar storage with a mobility of 0.35 cm⁻¹. 2 V -1 s -1 The on / off ratio exceeds 10 5 .

2. The method for fabricating an organic field-effect transistor memory based on fluorene-based small molecules as described in claim 1, characterized in that, Includes the following steps: 1) Dissolve the fluorenyl small molecule 3Ph-TrH in an organic solvent, heat or sonicate, and let stand overnight; 2) The substrate, gate electrode, and gate insulating layer constitute the substrate. The substrate is pretreated and then placed in an ultraviolet ozone generator for treatment. 3) Spin-coat the 3Ph-TrH solution prepared in step 1) onto the substrate treated in step 2), and anneal it to obtain a charge trapping layer; 4) An organic semiconductor layer and source / drain electrodes are sequentially vacuum-deposited onto the charge trapping layer; The organic semiconductor layer is made of one of the following materials: pentaphenyl, tetraphenyl, copper phthalocyanine, copper phthalocyanine fluoride, red fluorene, triphenyl, and 3-hexylthiophene. The organic semiconductor layer thin film is deposited on the surface of the charge trapping layer, and the thickness of the organic semiconductor layer is 30-50 nm.

3. The method for fabricating an organic field-effect transistor memory based on fluorene small molecules as described in claim 2, characterized in that, In step 4), the evaporation rate of the vacuum-deposited organic semiconductor layer is 0.2 Å / s, and the vacuum level is controlled at 6*10. -5 pa-6*10 -4 pa; the vacuum evaporation rate of the source and drain electrodes is 0.5 Å / s, and the vacuum level is controlled at 6*10 -5 pa-6*10 -4 pa.

4. The method for fabricating an organic field-effect transistor memory based on fluorene small molecules as described in claim 2, characterized in that, The organic solvent mentioned in step 1) is toluene, and the concentration of the solution prepared by dissolving 3Ph-TrH in the organic solvent is 3-5 mg / mL.

5. The method for fabricating an organic field-effect transistor memory based on fluorene-based small molecules as described in claim 2, characterized in that, The gate electrode is made of one of the following materials: highly doped silicon, aluminum, copper, gold, or silver; the gate insulating layer is made of one of the following materials: silicon dioxide, aluminum oxide, or polystyrene, and the thickness of the gate insulating layer is 50-300 nm.

6. The method for fabricating an organic field-effect transistor memory based on fluorene small molecules as described in claim 2, characterized in that, Step 3) The thickness of the charge trapping layer is 10-30 nm.

7. The method for fabricating an organic field-effect transistor memory based on fluorene small molecules as described in claim 2, characterized in that, The source and drain electrodes are made of metal or organic semiconductor materials, and their thickness is 50-100 nm. An organic semiconductor conductive channel is formed between the source and drain electrodes.

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