Mask handling device and substrate handling device

Abstract

The present inventive concept provides a mask processing apparatus and a substrate processing apparatus. The mask processing apparatus can include a support unit that supports the mask, and a light irradiation unit that adjusts a critical dimension of a pattern formed in the mask by irradiating the mask with light, wherein the light irradiation unit includes a light source that generates the light, and a light modulation assembly that modulates the light generated by the light source and forms an irradiation pattern.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean patent applications filed on December 30, 2021, with application number 10-2021-0192282, and on November 9, 2022, with application number 10-2022-0149032, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a mask processing apparatus and a substrate processing apparatus. Background Technology

[0004] To manufacture semiconductor components, various processes such as photography, etching, ashing, ion implantation, and thin film deposition are performed on substrates such as wafers. Various processing liquids and gases are used in the processes. Additionally, a drying process is performed on the substrate to remove the processing liquids used to process it.

[0005] Photographic processes used to form patterns on wafers include exposure processes. Exposure processes are used to cut semiconductor integrated materials attached to a wafer into desired patterns. Exposure processes can have various uses, such as forming patterns for etching and forming patterns for ion implantation. In an exposure process, a mask, acting as a "frame," is used to draw patterns on the wafer using light. When the semiconductor integrated material on the wafer, such as a photoresist, is exposed to light, the chemical properties of the photoresist change according to the light and the mask pattern. When a developing solution is supplied to the photoresist, its chemical properties change according to the pattern, and the pattern is formed on the wafer.

[0006] To ensure precise execution of the exposure process, the pattern formed on the mask must be precisely manufactured. In some cases, the critical dimensions of the pattern formed on the mask need to be adjusted. When the critical dimensions of the pattern do not meet the required size, manufacturing a new mask could be considered, but this is not appropriate because a mask is extremely expensive. Therefore, it is necessary to perform additional mask processing to adjust the critical dimensions of the pattern formed on the mask.

[0007] Figure 1To explain a view of a state in which a pattern is drawn on a wafer using deep ultraviolet (DUV) light. In the related art, a DUV mask to draw a pattern on a wafer using DUV light is configured so that DUV light can pass therethrough. Therefore, in order to adjust a critical dimension of a pattern formed on a DUV mask, the critical dimension of the pattern can be adjusted by irradiating a pattern on the DUV mask or a region around the pattern with a laser beam. For example, in order to increase the critical dimension of the pattern, the pattern can be irradiated with a laser beam. In addition, in order to reduce the critical dimension of the pattern, a crack can be formed in a region around the pattern by irradiating the region around the pattern with a laser beam. When the crack is formed in the region around the pattern, the region around the pattern thermally expands, and thus the critical dimension of the pattern can be reduced. However, it is difficult to apply a method of adjusting the critical dimension of a pattern to an extreme ultraviolet (EUV) mask.

[0008] Figure 2 To explain a view of a state in which a pattern is drawn on a wafer using EUV light. Referring to Figure 2 Unlike a DUV mask, an EUV mask draws a pattern on a wafer in a manner of reflecting EUV light. The wavelength of EUV light is much shorter than that of DUV light. Therefore, EUV light is absorbed to a mask rather than passing through the mask. Thus, the EUV mask draws a pattern on a wafer in a manner of reflecting EUV light. For this reason, it is difficult to apply a method of adjusting the critical dimension of a mask by irradiating only a pattern on the mask or a region around the pattern with a laser beam to the EUV mask. SUMMARY

[0009] Embodiments of the present inventive concept provide a mask processing apparatus and a substrate processing apparatus capable of efficiently processing a mask.

[0010] Embodiments of the present inventive concept also provide a mask processing apparatus and a substrate processing apparatus capable of efficiently adjusting a critical dimension of a pattern formed in the mask.

[0011] The problems to be solved by the present inventive concept are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the disclosure and the attached drawings.

[0012] The present inventive concept provides a mask processing apparatus. According to embodiments, a mask processing apparatus includes a support unit that supports a mask, and a light irradiation unit that irradiates the mask with light to adjust a critical dimension of a pattern formed in the mask, wherein the light irradiation unit includes a light source that generates light, and a light modulation assembly that modulates the light generated by the light source and forms an irradiation pattern.

[0013] According to an embodiment, the light modulation assembly can include a micro mirror provided in a rotational manner, and an assembly substrate on which the micro mirror is mounted.

[0014] According to an embodiment, the light irradiation unit can further include a light dumper that removes light whose reflection direction is changed by the micro mirror and thus is not transmitted to the mask.

[0015] According to an embodiment, the light dumper can have a hollow cylindrical shape and have a hole through which light modulated by the light modulation assembly passes.

[0016] According to an embodiment, at least a portion of an inner surface of the light dumper can include a groove that removes light whose reflection direction is changed by the micro mirror and thus the light is not transmitted to the mask.

[0017] According to an embodiment, the light irradiation unit can further include a cooling structure that cools the light dumper.

[0018] According to an embodiment, the mask processing apparatus can further include an irradiation position changing mechanism that changes an irradiation position of light modulated by the light modulation assembly, wherein the irradiation position changing mechanism includes a rotational driver, and a rotational mirror coupled to the rotational driver and rotatable.

[0019] According to an embodiment, a plurality of rotational drivers can be provided, and a plurality of rotational mirrors can be provided, and a rotational axis of any one of the rotational mirrors and a rotational axis of another one of the rotational mirrors are not parallel to each other.

[0020] According to an embodiment, the mask processing apparatus can further include an F-Theta lens mounted between the irradiation position changing mechanism and the support unit and refracting light obliquely traveling by the irradiation position changing mechanism in a vertical direction.

[0021] According to an embodiment, the mask processing apparatus can further include a controller that controls the light irradiation unit, wherein the controller controls the light modulation assembly to form a required irradiation pattern in each of a plurality of regions of a mask for which light irradiation is required and randomly determines an irradiation sequence of the plurality of regions.

[0022] Further, the present inventive concept provides a substrate processing apparatus. According to an embodiment, a substrate processing apparatus includes a support unit that supports a substrate; a chemical liquid supply unit that supplies a chemical liquid to the substrate supported by the support unit; and a laser beam irradiation unit that irradiates the substrate supported by the support unit with a laser beam, wherein the laser beam irradiation unit includes a laser beam source that generates the laser beam and a digital micro-mirror device (DMD) assembly that modulates the laser beam generated by the laser beam source so as to form an irradiation pattern.

[0023] According to an embodiment, the substrate processing apparatus can further include a bowl that defines a processing space in which the substrate is processed, the support unit supporting the substrate in the processing space.

[0024] According to an embodiment, the substrate processing apparatus can further include a controller that controls the laser beam irradiation unit, wherein the controller controls the laser beam irradiation unit such that the DMD assembly forms a first irradiation pattern when a first region of the substrate is irradiated with the laser beam; and the DMD assembly forms a second irradiation pattern when a second region of the substrate different from the first region is irradiated with the laser beam.

[0025] According to an embodiment, the substrate processing apparatus can further include a controller that controls the laser beam irradiation unit, wherein the controller controls the laser beam irradiation unit to randomly determine an irradiation sequence of a plurality of regions of the substrate for which irradiation of the laser beam is required, and irradiates the substrate with the laser beam according to the determined irradiation sequence.

[0026] According to an embodiment, the substrate processing apparatus can further include an irradiation position changing structure that changes an irradiation position of the laser beam modulated by the DMD assembly, wherein the support unit maintains a horizontal position of the substrate in a fixed state while the substrate is irradiated with the laser beam and / or while the irradiation position of the laser beam is changed.

[0027] According to an embodiment, the substrate processing apparatus can further include a controller that controls the chemical liquid supply unit and the laser beam irradiation unit, wherein the controller controls the chemical liquid supply unit and the laser beam irradiation unit such that the chemical liquid supply unit supplies a chemical liquid to the substrate supported by the support unit to form a liquid film, and the laser beam irradiation unit irradiates the substrate on which the liquid film is formed with the laser beam.

[0028] According to an embodiment, the substrate processing apparatus can further include a flat-top optical mechanism that converts a laser beam emitted by the laser beam source and having a Gaussian shape into a laser beam having a flat-top shape.

[0029] According to embodiments, the DMD assembly modulates the laser beam generated by the laser beam source by maintaining a width of the laser beam or reducing the width of the laser beam.

[0030] Further, the present inventive concept provides a mask processing apparatus for processing an extreme ultraviolet (EUV) mask that reflects EUV light to form a pattern on a substrate. According to embodiments, a mask processing apparatus includes a support unit that supports a mask in which a liquid film is formed by a chemical liquid supplied by a liquid supply unit and adjusts a critical dimension of a pattern formed in the mask, a liquid supply unit that supplies the chemical liquid as an etchant to the mask, and a laser beam irradiation unit that irradiates the mask by a laser beam, wherein the laser beam irradiation unit includes a laser beam source that generates a laser beam having a Gaussian shape, a digital micromirror device (DMD) assembly that modulates the laser beam generated by the laser beam source to form an irradiation pattern, a laser beam collector that removes the laser beam whose reflection direction is changed by the DMD assembly and thus the laser beam is not irradiated to the substrate, a hole formed in the laser beam collector through which the laser beam modulated by the DMD assembly passes, and a plurality of grooves formed in an inner surface of the laser beam collector that remove the laser beam that is not irradiated to the substrate, a flat-top optical mechanism that is installed between the laser beam source and the DMD assembly and converts the laser beam having the Gaussian shape into a laser beam having a flat-top shape, an irradiation position changing mechanism that is an electric scanner that changes a position at which the mask is irradiated by the laser beam modulated by the DMD assembly, and a flat-field focusing lens that is positioned between the irradiation position changing mechanism and the support unit and changes a traveling direction of the laser beam passing through the irradiation position changing mechanism to a vertical direction.

[0031] According to embodiments, the mask processing apparatus can further include a controller that controls the laser beam irradiation unit and the chemical liquid supply unit, wherein the controller performs control of the chemical liquid supply unit such that the chemical liquid supply unit supplies the chemical liquid to the mask supported by the support unit to form the liquid film, randomly determines, by the controller, an irradiation sequence of the laser beam for a plurality of regions of the mask requiring the laser beam irradiation, controls the DMD assembly such that the DMD assembly forms an irradiation pattern corresponding to a region among the plurality of regions that is irradiated by the laser beam, and irradiates the mask by the laser beam according to the formed irradiation pattern and the irradiation sequence.

[0032] Also, the present inventive concept provides a mask processing method. According to an embodiment, the mask processing method includes a mask detecting operation that forms a map of regions requiring adjustment of a critical dimension of a pattern drawn in a mask via visual detection, a chemical liquid supplying operation that supplies a chemical liquid to the mask to form a liquid film, and a light irradiation operation that irradiates regions requiring adjustment of a critical dimension of the mask by a laser beam, the liquid film being formed on the mask, an irradiation pattern being formed by a light modulation assembly via the laser beam.

[0033] According to an embodiment, the mask processing method can further include an alignment operation that aligns at least one of a position where the mask is placed on a support unit, a direction where the mask is placed on the support unit, and a position irradiated by the laser beam.

[0034] According to an embodiment, the alignment operation can be performed before the light irradiation operation.

[0035] According to an embodiment, in the alignment operation, the position where the mask is placed on the support unit and the direction where the mask is placed on the support unit can be identified by capturing an image of an alignment mark displayed on the mask via a vision sensor.

[0036] According to an embodiment, in the alignment operation, the position irradiated by the laser beam can be identified by positioning an alignment plate under an electric scanner that changes an irradiation position of the laser beam, irradiating the alignment plate by the laser beam, and capturing an image of the alignment plate using a vision sensor.

[0037] According to an embodiment, a horizontal position and a vertical position of the mask can be maintained in a fixed state during the light irradiation operation.

[0038] According to an embodiment, an irradiation sequence of regions requiring adjustment of a critical dimension can be determined, and the irradiation sequence can be determined randomly regardless of positions of the regions.

[0039] According to an embodiment, the laser beam can be converted from a Gaussian shape to a flat-top shape, and the laser beam converted to the flat-top shape can be modulated by the light modulation assembly to form the irradiation pattern.

[0040] According to an embodiment, the light modulation assembly can modulate the laser beam by maintaining a width of the laser beam generated by a laser beam source or reducing the width of the laser beam.

[0041] Further, the present inventive concept provides a substrate processing method. According to an embodiment, the substrate processing method includes a substrate detecting operation that maps a region requiring heating in a substrate via visual detection, a chemical liquid supplying operation that supplies a chemical liquid to the substrate to form a liquid film, and a laser beam irradiation operation that irradiates the substrate on which the liquid film is formed with a laser beam modulated by a digital micromirror device (DMD) assembly and having an irradiation pattern.

[0042] According to an embodiment, the substrate processing method can further include an alignment operation that aligns at least one of a position at which the substrate is placed on a support unit, a direction at which the substrate is placed on the support unit, and a position irradiated by the laser beam.

[0043] According to an embodiment, an irradiation sequence of the region requiring heating can be determined, and the irradiation sequence can be determined randomly.

[0044] According to an embodiment, the laser beam can be converted from a Gaussian shape to a flat top shape, and the laser beam converted to the flat top shape can be modulated by the DMD assembly to form the irradiation pattern.

[0045] According to an embodiment, the DMD assembly can form the irradiation pattern at each of the regions requiring heating.

[0046] According to an embodiment, the DMD assembly can modulate the laser beam by maintaining a width of the laser beam generated by a laser beam source or reducing the width of the laser beam. BRIEF DESCRIPTION OF DRAWINGS

[0047] The above and other objects and features will become apparent from the following description of the drawings, in which like components are referred to by like reference numerals throughout the various drawing figures in which:

[0048] Figure 1 is a view showing a state in which a pattern is drawn on a wafer using deep ultraviolet (DUV) light;

[0049] Figure 2 is a view showing a state in which a pattern is drawn on a wafer using EUV light;

[0050] Figure 3 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present inventive concept;

[0051] Figure 4 is a schematic view showing a state in which a substrate is processed in a liquid processing chamber of Figure 3 ;

[0052] Figure 5To illustrate the implementation scheme Figure 3 A schematic diagram of the liquid handling chamber;

[0053] Figure 6 The diagram illustrates the distribution of light output from the light irradiation device.

[0054] Figure 7 This is a diagram illustrating the distribution of light passing through a flat-topped optical mechanism;

[0055] Figure 8 This is a schematic diagram illustrating the state of the optical modulation component;

[0056] Figure 9 This is a view showing the state of the substrate being irradiated by light output from the light modulation assembly;

[0057] Figure 10 This is a view illustrating the state in which light output from the light modulation component is removed by the optical collector;

[0058] Figure 11 A view used to illustrate the principle of removing light from an optical collector;

[0059] Figure 12 A view used to describe the irradiation pattern of light output from the optical modulation component;

[0060] Figure 13 This is a view illustrating the state of the irradiation position changing mechanism altering the irradiation position of light.

[0061] Figure 14 This is a view illustrating how a structure that changes the irradiation position alters the direction of light traveling in an inclined direction to a vertical direction.

[0062] Figure 15 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided.

[0063] Figure 16 To illustrate the operation of the substrate processing apparatus Figure 15 A view of the alignment operation status;

[0064] Figure 17 To illustrate the operation of the substrate processing apparatus Figure 15 A view of the status of the chemical liquid supply operation;

[0065] Figure 18 and Figure 19 To illustrate the operation of the substrate processing apparatus Figure 15 A view of the state of the light irradiation operation; and

[0066] Figure 20 A view of a mask used to describe the irradiation sequence of a light irradiation unit.

[0067] SYMBOLS

[0068] 10 - indexing module; 12 - load port; 14 - indexing frame; 20 - processing module; 30 - controller; 120 - indexing robot; 122 - hand; 124 - guide rail; 200 - buffer unit; 220 - buffer; 300 - transfer chamber; 320 - transfer robot; 322 - hand; 324 - guide rail; 400 - liquid processing chamber; 420 - support unit; 422 - chuck; 424 - support shaft; 425 - driving member; 426 - support pin; 430 - bowl; 431 - processing space; 432 - discharge hole; 433 - bottom portion; 434 - vertical portion; 435 - inclined portion; 440 - chemical liquid supply unit; 441 - nozzle; 442 - fixed body; 443 - rotating shaft; 444 - rotating member; 500 - light irradiation unit; 510 - light source; 520 - flat top optical mechanism; 530 - mirror surface; 531 - first mirror surface; 532 - second mirror surface; 540 - prism optical mechanism; 550 - light modulation assembly; 560 - light collector; 561 - first hole; 562 - second hole; 563 - inner surface; 570 - cooling mechanism; 580 - irradiation position changing mechanism; 581 - first reflection mechanism; 581a - first rotary driver; 581b - first rotary mirror surface; 583 - second reflection mechanism; 583a - second rotary driver; 583b - second rotary mirror surface; 590 - lens; 610 - alignment unit / alignment board; 620 - alignment unit / alignment camera; AK - reference mark; A1 - first area; A2 - second area; A3-A8 - area; C - chemical liquid; CE - unit; CR - container; EP - exposure pattern; G - groove; HP - irradiation pattern; L - light beam; MI - micro mirror; M - substrate; P - pattern; P1 - first pattern; P2 - second pattern; SB - assembly substrate; S10 - mask detection operation; S20 - alignment operation; S30 - chemical liquid supply operation; S40 - light irradiation operation; X - first direction; Y - second direction; Z - third direction. DETAILED DESCRIPTION

[0069] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings such that those skilled in the art to which the inventive concept pertains can easily practice the inventive concept. However, the inventive concept can be implemented in various different forms, and is not limited to the embodiments. In addition, in the description of the embodiments of the inventive concept, a detailed description of related known functions or configurations incorporated herein will be omitted when it is deemed to make the essence of the inventive concept unnecessarily unclear. Furthermore, in all the accompanying drawings, like components are designated with like reference numerals, and repeated description on the like components will be omitted.

[0070] The expression "comprising" some components can mean that another component can be further included, not excluded, unless there is a specific contradictory description. In detail, it should be understood that the terms "comprise", "include", "have", and the like specify the presence of the features, numbers, steps, operations, components or elements described in the specification or combinations thereof, and do not exclude the presence or additional possibility of one or more other features, numbers, steps, operations, components or elements.

[0071] The singular expression includes the plural expression, unless it is clearly indicated otherwise in the context. In addition, in the drawings, the shape and size of components can be exaggerated for a clearer description.

[0072] Terms such as first and second can be used to describe various components, but the components are not limited to the aforementioned terms. The terms can be used only for the purpose of distinguishing one component from another component. For example, although it does not depart from the scope of the inventive concept, a first component can be named a second component, and similarly a second component can be named a first component.

[0073] When referring to a component "connected" or "electrically connected" to another component, it should be understood that the first component can be directly connected or electrically connected to the second component, but a third component can be disposed between the two components. On the other hand, when referring to a component "directly connected" or "directly connected to" another component, it should be understood that a third component does not exist between the two components. It should be understood that other expressions describing the relationship between components, such as "between", "directly between", "adjacent to", and "directly adjacent to", can have the same purpose.

[0074] In addition, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by those skilled in the art of the inventive concept. Terms in a common dictionary should be interpreted to have meanings consistent with those in the context of the related art, and should not be interpreted as ideal or overly formal forms, unless clearly defined in the specification of the inventive concept.

[0075] Hereinafter, embodiments of the inventive concept will be described with reference to Figures 3 to 19 .

[0076] Figure 3 To schematically show a plan view of a substrate processing apparatus according to an embodiment of the present invention.

[0077] Reference is made to Figure 3The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller 30. When viewed from the top, the indexing module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the indexing module 10 and the processing module 20 are arranged is referred to as a first direction X, the direction perpendicular to the first direction X when viewed from the top is referred to as a second direction Y, and the direction perpendicular to the first direction X and the second direction Y is referred to as a third direction Z.

[0078] The indexing module 10 transfers the substrate M from a container CR that accommodates the substrate M to the processing module 20, and accommodates the substrate M that is completely processed by the processing module 20 in the container CR. The longitudinal direction of the indexing module 10 is set to the second direction Y. The indexing module 10 has a load port 12 and an indexing frame 14. The load port 12 is located on the side opposite to the processing module 20 with respect to the indexing frame 14. The container CR that accommodates the substrate M is placed on the load port 12. The load port 12 can be provided as a plurality of load ports 12, and the plurality of load ports 12 can be arranged in the second direction Y.

[0079] A sealed container CR such as a front open unified pod (FOUP) can be used as the container CR. The container CR can be placed on the load port 12 by an operator or a transfer unit (not shown) such as an overhead transport machine, an overhead conveyor, or an automated guided vehicle.

[0080] An indexing robot 120 is provided in the indexing frame 14. A guide track 124 having a longitudinal direction set to the second direction Y can be provided in the indexing frame 14, and the indexing robot 120 can be provided to be movable on the guide track 124. The indexing robot 120 can include a hand 122 on which the substrate M is placed, and the hand 122 can be provided to move up and down, rotate using the third direction Z as an axis, and move in the third direction Z. A plurality of hands 122 can be spaced apart from each other in the vertical direction, and the hands 122 can move forward and backward independently of each other.

[0081] The controller 30 can control components of the substrate processing apparatus. The controller 30 can include a process controller including a microprocessor (computer) that performs control of operations of the substrate processing apparatus, a user interface including a keyboard for inputting commands to allow an operator to manage the substrate processing apparatus and a display for visualizing and displaying an operating situation of the substrate processing apparatus, and a memory unit for storing a control program of a process performed by the substrate processing apparatus under control of the process controller or a program for performing a process in the assembly according to various data and process conditions, that is, a process recipe. In addition, the user interface and the memory unit can be connected to the process controller. The process recipe can be stored in a memory medium of the memory unit, and the memory medium can be a hard disk, and can be a transportable disk such as a compact disc read-only memory (CD-ROM) and a digital versatile disc (DVD), and a semiconductor memory such as a flash memory.

[0082] The controller 30 can control the substrate processing apparatus to perform the following substrate processing method. For example, the controller 30 can control components disposed in the liquid processing chamber 400 to perform the following substrate processing method.

[0083] The processing module 20 includes a buffer unit 200, a transfer chamber 300, and a liquid processing chamber 400. The buffer unit 200 provides a space in which a substrate M carried in the processing module 20 and a substrate M detached from the processing module 20 temporarily stay. In the liquid processing chamber 400, a liquid processing process of supplying a liquid to the substrate M and processing the substrate M with the liquid is performed. The transfer chamber 300 transfers the substrate M between the buffer unit 200 and the liquid processing chamber 400.

[0084] A longitudinal direction of the transfer chamber 300 can be set as a first direction X. The buffer unit 200 can be disposed between the indexing module 10 and the transfer chamber 300. The liquid processing chamber 400 can be arranged on a side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be arranged in a second direction Y. The buffer unit 200 can be positioned at one end of the transfer chamber 300.

[0085] According to an embodiment, the liquid processing chamber 400 can be arranged on both sides of the transfer chamber 300. The liquid processing chamber 400 on one side of the transfer chamber 300 can be arranged in an A x B array in the first direction X and a third direction Z (where A and B are natural numbers of 1 or greater than 1).

[0086] The transfer chamber 300 has a transfer robot 320. A guide rail 324 having a longitudinal direction set to the first direction X can be provided in the transfer chamber 300, and the transfer robot 320 can be provided to be movable on the guide rail 324. The transfer robot 320 can include a hand 322 on which the substrate M is placed, and the hand 322 can be provided to move forward and backward, rotate using the third direction Z as an axis, and move in the third direction Z. A plurality of hands 322 can be spaced apart from each other in the vertical direction, and the hands 322 can move forward and backward independently of each other.

[0087] The buffer unit 200 can have a plurality of buffers 220 on which the substrate M is placed. The buffers 220 can be spaced apart from each other in the third direction Z. The front surface and the rear surface of the buffer unit 200 are open. The front surface is a surface facing the indexing module 10, and the rear surface is a surface facing the transfer chamber 300. The indexing robot 120 can access the buffer unit 200 via the front surface, and the transfer robot 320 can access the buffer unit 200 via the rear surface.

[0088] Hereinafter, the substrate M processed in the liquid processing chamber 400 will be described in detail.

[0089] Figure 4 To show a schematic view of a state in which the substrate is processed in the liquid processing chamber. Figure 3 To show a schematic view of a state in which the substrate is processed in the liquid processing chamber.

[0090] Referring to Figure 4 The object to be processed processed in the liquid processing chamber 400 can be one substrate among a wafer, a glass, and a photomask. For example, the substrate M processed in the liquid processing chamber 400 can be a photomask of a "frame" used during an exposure process.

[0091] The substrate M can have a quadrangular shape. The substrate M can be a photomask of a "frame" used during an exposure process. At least one reference mark AK can be shown on the substrate M. For example, a plurality of reference marks AK can be formed at corner regions of the substrate M. The reference mark AK can be a mark called an alignment key and used when the substrate M is aligned. In addition, the reference mark AK can be a mark to derive position information about the substrate M. For example, the liquid processing chamber 400 can have a vision sensor (not shown) such as a camera, the aforementioned vision sensor can take an image by acquiring the reference mark AK, and the controller 30 can detect the position or direction of the substrate M by analyzing the image including the reference mark AK. In addition, the reference mark AK can also be used to identify the position of the substrate M when the substrate M is transferred.

[0092] The unit CE can be formed on the substrate M. At least one unit CE can be formed, for example, a plurality of units CE can be formed. A plurality of patterns can be formed in each of the units CE. The patterns formed in the units CE can be defined as one pattern group. The patterns formed in the units CE can include the exposure pattern EP and the first pattern P1. The exposure pattern EP can be used to form an actual pattern on the substrate M. In addition, the first pattern P1 can be a pattern representing the exposure pattern EP formed in one unit CE. In addition, when a plurality of units CE is provided, a plurality of first patterns P1 can be provided. In addition, a plurality of first patterns P1 can be formed in one unit CE. The first pattern P1 can have a shape in which a plurality of portions of the exposure pattern EP are combined. The first pattern P1 can be referred to as a monitor pattern. In addition, the first pattern P1 can also be referred to as a critical dimension monitoring macro (CDMM).

[0093] When an operator detects the first pattern P1 via a scanning electron microscope (SEM), it can be estimated whether the shape of the exposure pattern EP formed in one unit CE is good or bad. In addition, the first pattern P1 can be referred to as a detection pattern. In addition, the first pattern P1 can also be any of the exposure patterns EP that actually participate in the exposure process. In addition, the first pattern P1 can be both a detection pattern and a pattern that actually participates in the exposure process.

[0094] The second pattern P2 can be a pattern representing the exposure pattern EP formed in the entire substrate M. For example, the second pattern P2 can have a shape in which some of the first patterns P1 are combined.

[0095] When an operator detects the second pattern P2 via a SEM, it can be estimated whether the shape of the exposure pattern EP formed in one substrate M is good or bad. In addition, the second pattern P2 can be a detection pattern. In addition, the second pattern P2 can also be a detection pattern that does not actually participate in the exposure process. The second pattern P2 can also be referred to as an anchor pattern.

[0096] Hereinafter, a substrate processing apparatus provided to the liquid processing chamber 400 will be described in detail. In the substrate M carried into the liquid processing chamber 400, adjustment of a critical dimension of at least one of the first pattern P1, the second pattern P2, and the exposure pattern EP is required.

[0097] Figure 5 A schematic view of a liquid processing chamber according to an embodiment is shown. Reference is made to Figure 3 Figure 5 ​The liquid processing chamber 400 can include a support unit 420, a bowl 430, a chemical liquid supply unit 440, and a light irradiation unit 500.

[0098] The support unit 420 can support the substrate M in a processing space 431 defined by the bowl 430. The support unit 420 can support the substrate M. The support unit 420 can rotate the substrate M.

[0099] The support unit 420 can include a chuck 422, a support shaft 424, a driving part 425, and a support pin 426. The support pin 426 can be disposed in the chuck 422. The chuck 422 can have a plate shape with a certain thickness. The support shaft 424 can be coupled to a lower portion of the chuck 422. The support shaft 424 can be a hollow shaft. In addition, the support shaft 424 can be rotated by the driving part 425. The driving part 425 can be a hollow motor. When the driving part 425 rotates the support shaft 424, the chuck 422 coupled to the support shaft 424 can be rotated. The substrate M placed on the support pin 426 disposed in the chuck 422 can also be rotated by the rotation of the chuck 422.

[0100] The support pin 426 can support the substrate M. When viewed from the top, the support pin 426 can have a substantially circular shape. In addition, when viewed from the top, the support pin 426 can have a shape in which a portion corresponding to the edge region of the substrate M is concave downward. That is, the support pin 426 can include a first surface supporting a lower portion of the edge region of the substrate M and a second surface facing a lateral portion of the edge region of the substrate M to restrict movement of the substrate M in a lateral direction when the substrate M is rotated. At least one support pin 426 can be provided. The support pin 426 can be provided as a plurality of support pins 426. The number of support pins 426 can correspond to the number of edge regions of the substrate M having a quadrilateral shape. The support pin 426 can support the substrate M such that the bottom surface of the substrate M and the upper surface of the chuck 422 can be spaced apart from each other.

[0101] The bowl 430 can have a top-opened cylindrical shape. The bowl 430 can define the processing space 431. The substrate M can be subjected to liquid processing and heat processing inside the processing space 431. The bowl 430 can prevent the processing liquid supplied to the substrate M from scattering and being transmitted to the chemical liquid supply unit 440 and the light irradiation unit 500.

[0102] The bowl 430 can include a bottom portion 433, a vertical portion 434, and an inclined portion 435. An opening into which the support shaft 424 is insertable can be formed in the bottom portion 433 when viewed from the top. The vertical portion 434 can extend from the bottom portion 433 in the third direction Z. The inclined portion 435 can extend obliquely upward from the vertical portion 434. In addition, the inclined portion 435 can extend obliquely in a direction toward the substrate M supported by the support unit 420. An exhaust hole 432 through which a treatment liquid supplied by the chemical liquid supply unit 440 can be exhausted to the outside can be formed in the bottom portion 433.

[0103] In addition, the bowl 430 is coupled to a lifting member (not shown), and thus the position of the bowl 430 can be changed. The lifting member can be a driving device that moves the bowl 430 in a vertical direction. The lifting member can move the bowl 430 in an upward direction while the substrate M is subjected to a liquid treatment and / or a heat treatment, and move the bowl 430 in a downward direction when the substrate M is carried into or out of the liquid treatment chamber 400.

[0104] The chemical liquid supply unit 440 can supply a chemical liquid for liquid treatment of the substrate M. The chemical liquid supply unit 440 can supply the chemical liquid to the substrate M supported by the support unit 420. The chemical liquid can be an etching liquid or a cleaning liquid. The etching liquid can be a chemical substance. The etching liquid can etch a pattern formed on the substrate M. The etching liquid can be referred to as an etchant. The cleaning liquid can clean the substrate M. The cleaning liquid can be provided as a known chemical liquid.

[0105] The chemical liquid supply unit 440 can include a nozzle 441, a fixed body 442, a rotating shaft 443, and a rotating member 444.

[0106] The nozzle 441 can supply a treatment liquid to the substrate M supported by the support unit 420. One end of the nozzle 441 can be coupled to the fixed body 442, and the other end of the nozzle 441 can extend in a direction from the fixed body 442 toward the substrate M. The nozzle 441 can extend from the fixed body 442 in the first direction X. In addition, the other end of the nozzle 441 can extend to be bent at a certain angle in a direction toward the substrate M supported by the support unit 420.

[0107] The nozzle 441 can be provided as a plurality of nozzles 441 as needed. Any one of the nozzles 441 can be a nozzle through which the above-described etching liquid is exhausted, and another one of the nozzles 441 can be a nozzle through which the above-described cleaning liquid is exhausted.

[0108] The fixed body 442 can fixedly support the nozzle 441. The fixed body 442 can be connected to a rotating shaft 443 that is rotated by a rotating member 444 using the third direction Z as a reference. When the rotating member 444 rotates the rotating shaft 443, the fixed body 442 can be rotated using the third direction Z as an axis. Accordingly, the discharge port of the nozzle 441 can be moved between a liquid supply position at which a processing liquid is supplied to the substrate M and a standby position at which a processing liquid is not supplied to the substrate M.

[0109] The light irradiation unit 500 can irradiate light to the substrate M that is a mask. The light irradiation unit 500 can irradiate a laser beam to the substrate M that is a mask. The light irradiation unit 500 can be referred to as a laser beam irradiation unit. The light irradiation unit 500 can adjust a critical dimension of a pattern formed on the substrate M by irradiating the substrate M with light, where a liquid film is formed on an upper surface of the substrate M by a chemical liquid (e.g., an etching liquid) supplied by the chemical liquid supply unit 440. The temperature of the region of the mask irradiated with light by the light irradiation unit 500 can increase. Accordingly, relatively more etching can be performed on the region irradiated with light, and relatively less etching can be formed in the region not irradiated with light. In this way, the critical dimension of the pattern formed on the substrate M can be adjusted.

[0110] The light irradiation unit 500 can include a light source 510, a flat top optical mechanism 520, a mirror 530, a prism optical mechanism 540, a light modulation assembly 550, a light collector 560, a cooling mechanism 570, an irradiation position changing mechanism 580, and a lens 590.

[0111] The light source 510 can generate a light beam L. The light source 510 can generate a light beam L having a linearity. The light source 510 can generate a laser beam. The light source 510 can also be referred to as a laser beam source. The light beam L generated by the light source 510 can be irradiated on the substrate M to heat the substrate M. The light source 510 can have an output in a range of 20 W or less per unit area (cm2). When the light source 510 can have an output in a range of 20 W per unit area (cm2), the light modulation assembly 550 can be properly driven without being damaged.

[0112] The flat top optical mechanism 520 can convert a shape of light output from the light source 510.

[0113] Figure 6 A graph illustrating a distribution of light output from the light source, and Figure 7 A graph illustrating a distribution of light passing through the flat top optical mechanism.

[0114] Reference Figures 5 to 7 The laser beam output from the light source 510 can have a Gaussian shape in which an intensity distribution has a shape likeFigure 6 In more detail, the intensity of the laser beam output from the light source 510 can be high at the center of the laser beam and can gradually decrease as the distance from the center of the laser beam increases (see Figure 6 ). Therefore, when the substrate M is irradiated by the laser beam output from the light source 510, the area closer to the center of the laser beam can be heated more and the area close to the edge of the laser beam can be heated less. Therefore, the light irradiation unit 500 according to the embodiment of the inventive concept can configure the flat-top optical mechanism 520 on the travel path of the light beam L output from the light source 510. The flat-top optical mechanism 520 can be a laser beam shaper that converts the light beam L output from the light source 510 and having a Gaussian shape into a flat-top light beam L. The light beam L output from the light source 510 can be converted into a flat-top shape in which the intensity distribution (illumination intensity) is relatively uniform due to the light beam L passing through the flat-top optical mechanism 520 (see Figure 7 ).

[0115] Referring to Figure 5 , the light beam L passing through the flat-top optical mechanism 520 can be reflected by a first mirror 531 among the mirrors 530. The light reflected by the first mirror 531 can be transmitted to a prism optical mechanism 540.

[0116] The prism optical mechanism 540 can reflect the light beam L passing through the flat-top optical mechanism 520 and reflected by the first mirror 531 again to a light modulation assembly 550. The light beam L transmitted to the light modulation assembly 550 can be modulated by the light modulation assembly 550 and output. The light beam L modulated and output by the light modulation assembly 550 can be transmitted to a second mirror 532 among the mirrors 530 while passing through the prism optical mechanism 540. The light beam L transmitted to the second mirror 532 can be reflected and transmitted to an irradiation position changing mechanism 580.

[0117] The light modulation assembly 550 can modulate the transmitted light beam L. The light modulation assembly 550 can modulate the light beam L generated by the light source 510 to form an irradiation pattern. The light modulation assembly 550 can be a digital micro-mirror device (DMD) assembly.

[0118] Figure 8A diagram illustrating a state of the light modulation assembly is shown. The light modulation assembly 550 can include an assembly substrate SB and a plurality of micro-mirrors MI. Electrodes corresponding to the plurality of micro-mirrors MI, respectively, can be disposed in the assembly substrate SB. The controller 30 can transmit a digital signal of "0" or "1" to the electrodes disposed in the assembly substrate SB. The micro-mirrors MI can be rotatably disposed. The micro-mirrors MI can be rotatably disposed using a first direction X, a second direction Y, and a direction parallel to a plane passing through the first direction X and the second direction Y as an axis. The micro-mirrors MI corresponding to the electrodes to which the digital signal of "0" is transmitted can be in an off state, and the micro-mirrors MI corresponding to the electrodes to which the digital signal of "1" is transmitted can be in an on state. The micro-mirrors MI in the on state can irradiate the substrate M with the light beam L, and the substrate M can not be irradiated with the light beam L reflected by the micro-mirrors MI in the off state.

[0119] Figure 9 A view showing a state in which the substrate is irradiated with light output from the light modulation assembly is shown. For convenience of description, Figure 9 A path of the light reflected by any one of the micro-mirrors MI is shown. Referring to Figure 5 、 Figure 8 and Figure 9 The light beam L reflected by the micro-mirrors MI in the on state can be transmitted to the substrate M.

[0120] Figure 10 A view showing a state in which the light output from the light modulation assembly is removed by the optical collector is shown. For convenience of description, Figure 10 A path of the light beam L reflected by any one of the micro-mirrors MI is shown. Referring to Figure 5 、 Figure 8 and Figure 10 The micro-mirrors MI in the off state can reflect the light beam L, and thus the light beam L can not be transmitted to the substrate M. In detail, the micro-mirrors MI can be rotatably disposed as described below. The micro-mirrors MI in the off state can be rotated to change a path of the light L transmitted from the light source 510 so that the light is not transmitted to the substrate M. The light beam L emitted from the micro-mirrors MI in the off state can be irradiated to an inner surface of the optical collector 560 without passing through a second hole 562 (to be described below) of the optical collector 560, and thus can be extinguished.

[0121] Figure 11 A view for describing a principle of removing light from the optical collector is shown. Referring to Figure 5 and Figure 11The light collector 560 can have a hollow tubular shape. The light collector 560 can be made of a material such as synthetic resin capable of absorbing and removing the light beam L. The prism optical mechanism 540 can be disposed in an inner space of the light collector 560. The light modulation assembly 550 can be disposed in the inner space of the light collector 560, or can be arranged outside the light collector 560.

[0122] The light collector 560 can include a first hole 561 and a second hole 562. The first hole 561 can be formed on a lateral side of the light collector 560. The first hole 561 can be a hole through which the light beam L generated by the light source 510 and converted via the flat top optical mechanism 520 passes. The second hole 562 can be a hole through which the light beam L modulated by the light modulation assembly 550 passes. The second hole 562 can be formed on a lower side of the light collector 560.

[0123] A groove G can be formed in an inner surface 563 of the light collector 560. The groove G formed in the inner surface 563 of the light collector 560 can absorb light reflected by the micro mirror Ml in the off state. In detail, when the light beam L is transmitted to the groove G, the light beam L can be reflected several times in the groove G while being removed. The light beam L can be reflected several times in the groove G and lose thermal energy to the light collector 560 while being removed. Figure 5 and Figure 11 An embodiment in which the groove G is formed only at a lower portion of the light collector 560 is described, but the inventive concept is not limited thereto, and the groove G can be formed over the entire inner surface 563 of the light collector 560.

[0124] Referring to Figure 5 As the light collector 560 removes the light beam L, the temperature of the light collector 560 can increase. Accordingly, the light irradiation unit 500 according to an embodiment of the inventive concept can include a cooling mechanism 570 that cools the light collector 560. The cooling mechanism 570 can be a fan that forms an air flow for cooling the light collector 560.

[0125] Figure 12 is a view for describing an irradiation pattern of light output from the light modulation assembly. Referring to Figure 5 , Figure 8 and Figure 12 As described above, the micro mirror Ml can be switched between the on state and the off state. The state switching of the micro mirror Ml between the on state and the off state can be performed in an extremely short time. As the micro mirror Ml is switched between the on state and the off state, the light modulation assembly 550 can form various irradiation patterns HP. For example, Figure 12The heat transferred to the substrate M per unit time from the micro-mirror Ml is shown. The irradiation pattern HP can include a plurality of patterns P corresponding to the micro-mirrors Ml, respectively. When it is desired to increase the heat transferred to the substrate M per unit time from the micro-mirror Ml, the on state of the micro-mirror Ml can be maintained long per unit time, and the off state thereof can be maintained short. When it is desired to decrease the heat transferred to the substrate M per unit time from the micro-mirror Ml, the on state of the micro-mirror Ml can be maintained short, and the off state thereof can be maintained long.

[0126] Figure 13 A view illustrating a state in which the irradiation position changing mechanism changes the irradiation position of light is shown. Referring to Figure 5 and Figure 13 The irradiation position changing mechanism 580 can change the irradiation position by reflecting the light beam L modulated by the light modulation assembly 550 and thus having a certain irradiation pattern HP. The irradiation position changing mechanism 580 can be disposed in the liquid treatment chamber 400 while its position is fixed. The irradiation position changing mechanism 580 can include a first reflection mechanism 581 and a second reflection mechanism 583. The first reflection mechanism 581 can include a first rotary driver 581a and a first rotary mirror 581b. The second reflection mechanism 583 can include a second rotary driver 583a and a second rotary mirror 583b. The first rotary driver 581a and the second rotary driver mechanism 583a can be motors. The light modulated by the light modulation assembly 550 can be reflected by the first reflection mechanism 581 and transferred to the second reflection mechanism 583. The light beam L transferred to the second reflection mechanism 583 can be reflected again by the second reflection mechanism 583 and transferred to the lens 590. The irradiation position changing mechanism 580 can be a Galvano scanner.

[0127] The rotation axis of the first rotary mirror 581b and the rotation axis of the second rotary mirror 583b can not be parallel to each other. In addition, the rotation axis of the first rotary mirror 581b and the rotation axis of the second rotary mirror 583b can not be perpendicular to each other as desired. Thus, the irradiation position of the light beam L reflected and transferred via the second mirror 532 can be changed in various ways by the rotation of the first rotary mirror 581b and the second rotary mirror 583b.

[0128] Figure 14 A view illustrating a state in which the irradiation position changing mechanism changes the traveling direction of light traveling in a tilt direction to a perpendicular direction is shown. Referring to Figure 5 and Figure 14The light beam L, the irradiation position of which is changed by the irradiation position changing mechanism 580, can travel in the tilt direction. When the light beam L traveling in the tilt direction by the irradiation position changing mechanism 580 is directly transmitted to the substrate M, the light beam L can be transmitted to the substrate M obliquely. To solve this problem, in the light irradiation unit 500 according to the embodiment of the present inventive concept, the lens 590 can be disposed between the irradiation position changing mechanism 580 and the support unit 420. The lens 590 can be a flat field lens (F-theta lens). The lens 590 can be configured to refract light traveling obliquely with respect to the third direction Z perpendicular to the ground to the third direction Z in the vertical direction by the irradiation position changing mechanism 580.

[0129] Figure 15 A flowchart illustrating a substrate processing method according to an embodiment of the present inventive concept is shown. The substrate processing method according to the embodiment of the present inventive concept can be a mask processing method of processing a mask. As the controller 30 controls the components provided in the substrate processing apparatus, the substrate processing method to be described below can be performed.

[0130] Reference Figure 4 , Figure 5 and Figure 15 The substrate processing method according to the embodiment of the present inventive concept can include a mask detection operation S10, an alignment operation S20, a chemical liquid supply operation S30, and a light irradiation operation S40.

[0131] In the mask detection operation S10, the critical dimension of the pattern formed on the substrate M can be detected. For example, in the mask detection operation S10, the critical dimensions of the first pattern P1, the second pattern P2, and the exposure pattern EP formed on the substrate M can be detected. In the mask detection operation S10, among the first pattern P1, the second pattern P2, and the exposure pattern EP formed on the substrate M, a pattern for which the critical dimension of the pattern needs to be adjusted can be designated. In the mask detection operation S10, a region on the substrate M that needs to be irradiated by the light beam L can be designated. The mask detection operation S10 can be performed in a manner of acquiring an image of the substrate M using a vision sensor such as a camera. The mask detection operation S10 can be performed in a detection chamber (not shown) provided in the substrate processing apparatus of the present inventive concept, or can be performed in a separate detection chamber provided outside the substrate processing apparatus. In the mask detection operation S10, a region on the substrate M for which the critical dimension of the pattern needs to be adjusted (that is, a region that needs to be heated by the light beam L) can be mapped via visual detection. In the mask detection operation S10, map data of the mapped region for which the critical dimension needs to be adjusted can include the position and size of the region on the substrate M for which the critical dimension needs to be adjusted, the critical dimension of the pattern, and the like. The controller 30 can store the map data.

[0132] refer to Figure 15 In the alignment operation S20, the alignment of the position and orientation of the substrate M and the alignment of the irradiation position of the light beam L emitted from the light irradiation unit 500 can be performed.

[0133] First, the alignment of the position and orientation of the substrate M can be performed using reference marks AK displayed on the substrate M. For example, the image of the substrate M is acquired using a vision sensor of a camera such as the liquid processing chamber 400, and the position of the substrate M on the support unit 420 and the orientation in which the substrate M can be placed on the support unit 420 can be identified and aligned using reference marks AK displayed on the substrate M. For example, when the position of the substrate M is distorted, the position of the substrate M can be aligned by a transfer robot 320. Additionally, when the position of the substrate M is distorted, the light irradiation unit 500 can emit a light beam L in the reflection from the distorted position. Furthermore, when the position of the substrate M is distorted, the support unit 420 can rotate the substrate M to align it with its orientation.

[0134] Figure 16 To illustrate the operation of the substrate processing apparatus Figure 15 A view of the alignment operation status. (Reference) Figure 16 The alignment of the irradiation position of the light beam L emitted by the light irradiation unit 500 can be achieved using an alignment unit (alignment plate) 610 and an alignment camera 620. For example, the liquid processing chamber 400 may include an alignment unit (alignment plate) 610 and an alignment camera 620. The alignment unit (alignment plate) 610 and the alignment camera 620 may include an alignment plate 610 that moves horizontally between the substrate M and the lens 590, and an alignment camera 620.

[0135] In alignment operation S20, at the position irradiated by the light beam L emitted by the light irradiation unit 500, the alignment plate 610 can be positioned below the irradiation position changing mechanism 580 (electric scanner) that changes the irradiation position of the light beam L, and the light irradiation unit 500 can irradiate the alignment plate 610 through the light beam L. The light beam L irradiating the alignment plate 610 can leave a trace of the alignment plate 610 after passing through the irradiated light beam L. The alignment plate 610 can be moved to the lower side of the alignment camera 620 (not shown) by a moving mechanism, the alignment camera 620 being a vision sensor. The alignment camera 620 can acquire an image of the trace of the irradiated light beam L. The image of the alignment plate 610 acquired by the alignment camera 620 can be transmitted to the controller 30, and the controller 30 can identify whether the irradiation position of the light irradiation unit 500 is distorted based on the received image.

[0136] For example, in a state where the irradiation position changing mechanism 580 of the light irradiation unit 500 is set to irradiate the set position with the light beam L, the alignment plate 610 is irradiated with light, the actual irradiation position of the light beam L emitted by the irradiation position changing mechanism 580 is estimated by comprehensively considering the direction and distance of movement of the alignment plate 610 and the value of the position at which the alignment plate 610 is irradiated with the light beam L is coordinated, whether the position at which the light irradiation unit 500 is irradiated with the light beam L is aligned is identified by comparing the actual irradiation position with the set position, and when alignment is not achieved, the irradiation position changing mechanism 580 can have a reflection operation of the error value.

[0137] Figure 17 FIGS. 10A to 10C are views illustrating a state in which the substrate processing apparatus performs a chemical liquid supply operation according to an embodiment of the present application. Figure 15 Figure 4 Figure 15 Figure 17 In the chemical liquid supply operation S30, the chemical liquid C can be supplied to the substrate M. In the chemical liquid supply operation S30, the chemical liquid C can be supplied while the substrate M is rotated, and unlike this case, the chemical liquid C can be supplied without rotating the substrate M. In the chemical liquid supply operation S30, the chemical liquid C supplied can be an etching liquid. The chemical liquid C can be referred to as an etchant. When the chemical liquid supply operation S30 is terminated, a liquid film can be formed on the substrate M by the chemical liquid C. In the chemical liquid supply operation S30, the support unit 420 can rotate the substrate M, or can support the substrate M without rotating the substrate M to prevent misalignment of the substrate M.

[0138] Figure 18 Figure 19 FIGS. 11A to 11C are views illustrating a state in which the substrate processing apparatus performs a light irradiation operation according to an embodiment of the present application, and Figure 15 Figure 20 Figure 15 Figures 18 to 20 In the light irradiation operation S40, light is irradiated to the upper surface of the substrate M on which the liquid film is formed by the chemical liquid C, and thus a specific region of the substrate M can be heated. The entire etching of the pattern on the substrate M can be performed by the chemical liquid C, and the specific region irradiated with the light beam L is heated, so that the etching can be further performed. The degree of etching can vary depending on the amount of heat transferred by the light beam L per unit time, and the light modulation assembly 550 according to the inventive concept can form an irradiation pattern having various shapes, and thus the etching on the substrate M can be controlled to various shapes. In the light irradiation operation S40, the support unit 420 can support the substrate M without rotating the substrate M.

[0139] In addition, as Figure 20 ​​​​​​​In the mask detection operation S10, the light irradiation unit 500 can irradiate regions requiring irradiation of a specific light beam L, in other words, regions Al to A8 requiring heating by a light beam L having a specific irradiation pattern. For example, when a first region Al is irradiated by a light beam L, the light modulation assembly 550 can form a first irradiation pattern, and when a second region A2 different from the first region Al is irradiated by a light beam L, the light modulation assembly 550 can form a second irradiation pattern. In addition, the irradiation sequence of the light beam L for the regions Al to A8 requiring irradiation of the light beam L is not sequentially determined according to the positions thereof, but can be randomly determined. The controller 30 can store an algorithm for randomly determining the irradiation sequence of the regions requiring irradiation of the light beam L designated in the mask detection operation S10. In the irradiation sequence of the light beam L for the regions Al to A8 requiring irradiation of the light beam L, when the irradiation sequence is sequentially determined according to the positions of the regions, the time during which heat is transferred to a specific region can be greatly increased. For example, when the regions Al, A2, and A3 are sequentially heated, the region A2 indirectly receives heat generated while the region Al is heated, and indirectly receives heat generated while the region A3 is heated. In addition, the regions A4 to A8 away from the regions Al, A2, and A3 are exposed to the chemical liquid C without an increase in the time of heat transfer. In other words, when the irradiation sequence of the light beam L for the regions Al to A8 requiring irradiation of the light beam L is sequentially determined according to the positions of the regions, it is difficult to accurately adjust the critical dimension of a pattern.

[0140] Accordingly, the controller 30 of the present inventive concept can randomly determine the irradiation sequence of the light beam L, thereby minimizing the occurrence of the above problems. In addition, the present inventive concept can randomize the irradiation sequence of the light beam L because the irradiation position of the light beam L is not changed by moving the substrate M, but is changed by changing the traveling direction of the light beam L itself by the irradiation position changing mechanism 580. For example, in the light beam L in a fixed state, when the irradiation position of the light beam L is changed by moving a stage supporting the substrate M, the time of movement of the stage increases when the irradiation sequence is randomized, and thus the time consumed for processing the substrate M can increase.

[0141] However, in the present inventive concept, while the substrate M is irradiated by the light beam L, and / or while the irradiation position of the light beam L is changed, the support unit 420 maintains the horizontal position of the substrate M in a fixed state, and the irradiation position changing mechanism 580 changes the traveling direction of the light beam L itself. Accordingly, even when the irradiation sequence is randomized, the time consumed for processing the substrate M is still difficult to increase.

[0142] In addition, the light modulation assembly 550 according to the inventive concept can modulate the light beam L by maintaining the width of the light beam L generated by the light source 510 or reducing the width of the light beam L. When the light beam L is transmitted to the substrate M, the number of the micro mirrors MI for heating a unit area increases. Therefore, even when some of the micro mirrors MI heating a unit area are malfunctioned, other micro mirrors MI can effectively perform heating.

[0143] In the above embodiments, the substrate M is a mask, but the inventive concept is not limited thereto. For example, the substrate can be various types of substrates such as a wafer or a glass substrate requiring critical dimension etching or adjustment of a pattern.

[0144] According to the embodiments of the inventive concept, a mask can be effectively processed,

[0145] In addition, according to the embodiments of the inventive concept, a critical dimension of a pattern formed in a mask can be effectively adjusted.

[0146] The effects of the inventive concept are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood from the description and the attached drawings by those skilled in the art.

[0147] The above detailed description illustrates the inventive concept. Furthermore, the above-described content describes exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, modifications, and environments. That is, the inventive concept can be modified and altered without departing from the scope of the inventive concept disclosed in the specification, the scope equivalent to the written disclosure, and / or the range of technology or knowledge of those skilled in the art. The written embodiments describe the best state for embodying the technical spirit of the inventive concept, and various changes required in the detailed application field and use of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to restrict the inventive concept to the disclosed embodiment state. Furthermore, it should be understood that the appended claims include other embodiments.

Claims

1. A mask processing apparatus for processing a mask, the mask processing apparatus comprising: a support unit configured to support the mask; a support unit configured to support the mask; a light irradiation unit configured to adjust a critical dimension of a pattern formed in the mask by light irradiation of the mask, wherein the light irradiation unit includes: a light source configured to generate the light; and a light modulation assembly configured to modulate the light generated by the light source and form an irradiation pattern; wherein the light modulation assembly includes: a micro mirror disposed in a rotational manner; and an assembly substrate in which the micro mirror is disposed; and the light irradiation unit further includes a light collector configured to remove light whose reflection direction is changed by the micro mirror and thus not transmitted to the mask, the light collector has a hollow cylindrical shape and has a hole through which the light modulated by the light modulation assembly passes, and at least a portion of an inner surface of the light collector includes a groove configured to remove light whose reflection direction is changed by the micro mirror and thus not transmitted to the mask.

2. The mask handling device according to claim 1, wherein the light irradiation unit further includes a cooling mechanism configured to cool the light collector.

3. The mask processing apparatus according to claim 1, further comprising: an irradiation position changing mechanism configured to change an irradiation position of the light modulated by the light modulation assembly, wherein the irradiation position changing mechanism includes: a rotational driver; and a rotational mirror coupled to the rotational driver and rotatable.

4. The mask handling device according to claim 3, wherein a plurality of rotational drivers is provided, and a plurality of rotational mirrors is provided, and a rotational axis of any one of the plurality of rotational mirrors and a rotational axis of another rotational mirror of the plurality of rotational mirrors are not parallel to each other.

5. The mask processing apparatus according to claim 3, further comprising: a flat field focusing lens disposed between the irradiation position changing mechanism and the support unit and configured to refract the light obliquely traveling by the irradiation position changing mechanism in a vertical direction.

6. The mask processing apparatus according to claim 1, further comprising: a controller configured to control the light irradiation unit, wherein, the controller controls the light modulation assembly to form an irradiation pattern required in each of a plurality of regions of the mask requiring irradiation of the light, and randomly determines an irradiation sequence of the plurality of regions.

7. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: a support unit configured to support the substrate; a chemical liquid supply unit configured to supply a chemical liquid to the substrate supported by the support unit; and a laser beam irradiation unit configured to irradiate a laser beam onto a pattern formed in the substrate, the laser beam irradiation unit includes: a light source configured to generate the laser beam; and a light modulation assembly configured to modulate the laser beam generated by the light source and form an irradiation pattern. wherein a liquid film is formed on the substrate by a chemical liquid supplied from the chemical liquid supply unit, and the laser beam irradiation unit is configured to irradiate the pattern in the substrate having the liquid film to adjust a critical dimension of the pattern, wherein the laser beam irradiation unit includes: a laser beam source configured to generate the laser beam; a digital micromirror device (DMD) component configured to modulate the laser beam generated by the laser beam source so as to form an irradiation pattern; wherein the laser beam irradiation unit further includes a laser beam collector configured to remove the laser beam whose reflection direction is changed by the DMD component and thus is not irradiated to the substrate, a plurality of grooves are formed in an inner surface of the laser beam collector, the plurality of grooves being configured to remove the laser beam which is not irradiated to the substrate.

8. The substrate processing apparatus according to claim 7, further comprising: a bowl configured to define a processing space in which the substrate is processed, the support unit supporting the substrate in the processing space.

9. The substrate processing apparatus according to claim 7, further comprising: a controller configured to control the laser beam irradiation unit, wherein the controller controls the laser beam irradiation unit such that the DMD component forms a first irradiation pattern when the first region of the substrate is irradiated with the laser beam, and the DMD component forms a second irradiation pattern when a second region of the substrate different from the first region is irradiated with the laser beam.

10. The substrate processing apparatus according to claim 7, further comprising: a controller configured to control the laser beam irradiation unit, wherein the controller controls the laser beam irradiation unit to randomly determine an irradiation sequence of a plurality of regions of the substrate which need irradiation of the laser beam, and irradiate the substrate with the laser beam according to the determined irradiation sequence.

11. The substrate processing apparatus according to claim 7, further comprising: an irradiation position changing mechanism configured to change an irradiation position of the laser beam modulated by the DMD component, wherein the support unit maintains a horizontal position of the substrate in a fixed state while the substrate is irradiated with the laser beam and / or while the irradiation position of the laser beam is changed.

12. The substrate processing apparatus according to claim 7, further comprising: a controller configured to control the chemical liquid supply unit and the laser beam irradiation unit, the controller controls the chemical liquid supply unit and the laser beam irradiation unit such that the laser beam is irradiated to the substrate in a state in which the liquid film is formed on the substrate. wherein The controller controls the chemical liquid supply unit and the laser beam irradiation unit such that the chemical liquid supply unit supplies the chemical liquid to the substrate supported by the support unit to form a liquid film, and the laser beam irradiation unit irradiates the laser beam to the substrate on which the liquid film is formed.

13. The substrate processing apparatus of claim 7, further comprising: a flat-top optical mechanism configured to convert the laser beam having a Gaussian shape emitted by the laser beam source into a laser beam having a flat-top shape.

14. The substrate processing apparatus of claim 8, wherein, The DMD assembly modulates the laser beam generated by the laser beam source by maintaining a width of the laser beam or reducing the width of the laser beam.

15. A mask processing apparatus for processing an extreme ultraviolet (EUV) mask by reflecting EUV light and forming a pattern on a substrate, the mask processing apparatus comprising: a support unit configured to support a mask; a liquid supply unit configured to supply a chemical liquid as an etchant to the mask; and a laser beam irradiation unit configured to irradiate the mask by a laser beam and adjust a critical dimension of a pattern formed in the mask in which a liquid film is formed by the chemical liquid supplied by the liquid supply unit, wherein the laser beam irradiation unit includes: a laser beam source configured to generate a laser beam having a Gaussian shape; a digital micromirror device (DMD) assembly configured to modulate the laser beam generated by the laser beam source to form an irradiation pattern; a laser beam collector configured to remove a laser beam whose reflection direction is changed by the DMD assembly and thus is not irradiated to the substrate; a hole is formed in the laser beam collector through which the laser beam modulated by the DMD assembly passes; and a plurality of grooves are formed in an inner surface of the laser beam collector, the plurality of grooves being configured to remove the laser beam that is not irradiated to the substrate; a flat-top optical mechanism arranged between the laser beam source and the DMD assembly and configured to convert the laser beam having a Gaussian shape into a laser beam having a flat-top shape; an irradiation position changing mechanism, which is an electric scanner, configured to change a position of the mask irradiated by the laser beam modulated by the DMD assembly; and a flat-field focusing lens positioned between the irradiation position changing mechanism and the support unit and configured to change a traveling direction of the laser beam by the irradiation position changing mechanism in a vertical direction.

16. The mask processing apparatus of claim 15, further comprising: a controller configured to control the laser beam irradiation unit and the chemical liquid supply unit, wherein the controller performs operations of: controlling the chemical liquid supply unit so that the chemical liquid supply unit supplies a chemical liquid to the mask supported by the support unit to form the liquid film; randomly determining, by the controller, an irradiation sequence of the laser beam for a plurality of regions of the mask requiring irradiation of the laser beam; controlling the DMD assembly so that the DMD assembly forms an irradiation pattern corresponding to a region irradiated by the laser beam among the plurality of regions; and irradiating the mask by the laser beam according to the formed irradiation pattern and the irradiation sequence.

Images