Packaging laminate structure and preparation method thereof

Abstract

The present disclosure provides a package stacking structure and a preparation method thereof. The package stacking structure comprises: a first package, the first package comprises an interposer, the interposer comprises an interposer base layer and a plurality of connection pads arranged on the interposer base layer; a limiting support layer, the limiting support layer is arranged on the interposer, the limiting support layer comprises a support portion arranged on the support area and a limiting portion arranged on the limiting area; a second package, the second package comprises a package body and a plurality of connectors connected to the package body, the limiting portion covers the connector, the package body contacts the supporting portion, and the supporting portion, the limiting portion, the package body and the interposer base layer form a closed space provided with connectors. The package stacking structure seals the connectors and the connection pads, thereby preventing air and moisture from penetrating between the two semiconductor devices. Therefore, the quality of the package stacking structure can be effectively improved, and its failure risk can also be effectively reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of packaging technology, and in particular to a packaging stacked structure and a preparation method thereof. Background Art

[0002] Semiconductor devices usually need to be packaged after they are manufactured. Package-on-Package (POP) technology can reintegrate the packages of logic and memory chips with the same appearance, which can meet the needs of miniaturization and high integration of semiconductor devices. Therefore, it is widely used in the packaging of dynamic random access memory (DRAM) and other devices.

[0003] At present, one of the two semiconductor devices that need to be packaged has an interposer including a pad, and the other has a connector for connecting the pad, and the connector is connected to the pad when the package is stacked. However, in the actual preparation process, there is always a certain gap between the two semiconductor devices, which makes it easy for air and moisture to penetrate between the two semiconductor devices and affect the reliability of the pad and the connector, causing the package stack structure to fail easily. Summary of the invention

[0004] Based on this, in order to improve the quality of the packaged stacked structure and reduce the failure risk of the packaged stacked structure in view of the problems in the above-mentioned background technology, it is necessary to provide a packaging method for a semiconductor structure.

[0005] According to some embodiments of the present disclosure, there is provided a package stack structure, comprising:

[0006] A first package, wherein the first package includes an interposer, the interposer includes an interposer base layer and a plurality of connection pads disposed on the interposer base layer, the interposer base layer has a support area and a limiting area located between the support areas, the connection pads and an area between adjacent connection pads are located in the limiting area;

[0007] A limiting support layer, wherein the limiting support layer is disposed on the intermediate layer, and the limiting support layer comprises a supporting portion disposed on the supporting area and a limiting portion disposed on the limiting area;

[0008] The second package includes a package body and a plurality of connectors connected to the package body, the connectors are connected to the corresponding connection pads, the limiting portion covers the connectors, the package body contacts the support portion, and the support portion, the limiting portion, the package body and the intermediate base layer form a closed space in which the connectors are arranged.

[0009] In some embodiments of the present disclosure, the first package further includes a first plastic packaging layer, and the first plastic packaging layer is made of a different material from that of the support portion.

[0010] In some embodiments of the present disclosure, the second package further includes a second plastic packaging layer, and the second plastic packaging layer is made of a different material from that of the support portion.

[0011] In some embodiments of the present disclosure, the elastic modulus of the support portion is greater than the elastic modulus of the first plastic encapsulation layer, and the elastic modulus of the support portion is greater than the elastic modulus of the second plastic encapsulation layer.

[0012] In some embodiments of the present disclosure, the hardness of the support portion is greater than the hardness of the first plastic encapsulation layer, and the hardness of the support portion is greater than the hardness of the second plastic encapsulation layer.

[0013] In some embodiments of the present disclosure, the limiting support layer is also disposed on the first plastic packaging layer.

[0014] In some embodiments of the present disclosure, a third plastic packaging layer is further included, the material of the third plastic packaging layer is different from the material of the support portion, and the contact area between the support portion and the package body is greater than the contact area between the third plastic packaging layer and the package body.

[0015] In some embodiments of the present disclosure, the thermal conductivity of the support portion is greater than the thermal conductivity of the intermediate base layer.

[0016] In some embodiments of the present disclosure, the material of the limiting portion is the same as that of the third plastic encapsulation layer, and the thermal expansion coefficient of the limiting portion is smaller than the thermal expansion coefficient of the supporting portion.

[0017] In some embodiments of the present disclosure, the material of the limiting portion is the same as that of the supporting portion.

[0018] In some embodiments of the present disclosure, the material of the support portion includes one or more of photoresist, silicon nitride, silicon oxynitride and silicon oxide.

[0019] In some embodiments of the present disclosure, a limiting through groove is provided in the support portion, the limiting through groove having two side notches and a groove cavity connected to the side notches, the notches are opened on the outer wall of the support portion, and the limiting portion is filled in the groove cavity.

[0020] In some embodiments of the present disclosure, the distance between the cavity wall of the groove cavity and the closest connection pad is greater than or equal to half of the spacing between adjacent connection pads.

[0021] In some embodiments of the present disclosure, the first package further includes a packaging layer disposed around the intermediate base layer, and the support portion is further extended to the packaging layer.

[0022] Furthermore, the present disclosure also provides a method for preparing a packaged laminate structure, which comprises the following steps:

[0023] providing the first package including the interposer;

[0024] Preparing a supporting portion of the limiting supporting layer on the supporting area of ​​the intermediate layer, and preparing a limiting portion of the limiting supporting layer on the limiting area of ​​the intermediate layer;

[0025] Provide the second package including the package body and the connector, connect the connector to the corresponding connection pad, and make the package body contact the support part, so that the support part, the limiting part, the package body and the intermediate base layer form a closed space in which the connector is provided.

[0026] In some embodiments of the present disclosure, the steps of preparing the supporting portion and preparing the limiting portion include:

[0027] Preparing a support material layer on the support area, and preparing a limiting material layer on the limiting area;

[0028] Using the supporting material layer as the supporting portion;

[0029] Etching the limiting material layer on the connection pad until the connection pad is exposed to form the limiting portion;

[0030] Alternatively, the steps of preparing the supporting portion and preparing the limiting portion include:

[0031] Preparing a support material layer covering the support area and the limiting area on the intermediary layer;

[0032] Etching the support material layer to form a limiting through groove in the support material layer to expose the limiting area, wherein the limiting through groove includes two side notches and a groove cavity connected to the side notches, and the notches are opened on the outer wall of the support portion, so that the retained support material layer serves as the support portion;

[0033] After the connecting member is connected to the connecting pad, a limiting material layer is filled into the groove cavity through the side notch to form the limiting portion.

[0034] In the package stacked structure, the limiting support layer includes a supporting portion and a limiting portion located between the supporting portions, and the limiting portion is provided on the intermediary layer between adjacent connection pads, and the supporting portion, the limiting portion, the package body and the intermediary base layer form a closed space to seal the connector and the connection pad, thereby blocking air and moisture from penetrating between the two semiconductor devices, improving the reliability of the connection pad and the connector, and reducing the risk of delamination of the package stacked structure. In addition, by covering the connector with the limiting portion to space adjacent connectors, it also has the function of protecting the connector and preventing short circuits between the connectors. Therefore, the quality of the package stacked structure can be effectively improved, and its failure risk can also be effectively reduced.

[0035] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, drawings of other embodiments can be obtained based on these drawings without creative work.

[0037] Figure 1 It is a schematic diagram of the longitudinal cross-section structure of a package stacked structure;

[0038] Figure 2 for Figure 1 A schematic cross-sectional view of one structure of the limiting support layer;

[0039] Figure 3 for Figure 1 A schematic cross-sectional view of one structure of the limiting support layer;

[0040] Figure 4 for Figure 1 A schematic cross-sectional view of one structure of the limiting support layer;

[0041] Figure 5 A schematic diagram of the steps of a method for preparing a packaged laminate structure;

[0042] Figure 6 is a schematic structural diagram of a first package;

[0043] Figure 7 For Figure 6 A schematic diagram of a structure for preparing a support material layer based on the structure shown;

[0044] Figure 8 For Figure 7 A schematic diagram of a structure of a support portion formed on the basis of the structure shown;

[0045] Fig. 9 For Figure 8 A schematic diagram of a structure in which a second package is connected to the structure shown;

[0046] Fig.10 For Fig. 9 A schematic diagram of the structure of the limiting part formed on the basis of the structure shown;

[0047] Fig.11 For Fig.10 A schematic diagram of a structure in which a third plastic sealing layer is formed on the basis of the structure shown;

[0048] Fig.12 A schematic diagram of the steps of a method for preparing a packaged laminate structure;

[0049] Fig.13 A schematic diagram of the structure of an intermediary layer;

[0050] Fig.14 A schematic diagram of the structure of preparing a support material layer and a limiting material layer based on the structure shown in 13;

[0051] Fig.15 It is a schematic diagram of the structure of forming a limiting support layer based on the structure shown in 14;

[0052] Fig.16 For Fig.15 A schematic diagram of a structure for preparing a first packaging component and a third plastic packaging layer based on the structure shown;

[0053] Fig.17 For Fig.16 A schematic diagram of a structure in which a second package is connected to the structure shown;

[0054] The reference numerals and their meanings are as follows:

[0055] 110, intermediary layer; 111, connection pad; 112, intermediary base layer; 120, first chip structure; 121, first adhesive layer; 122, first semiconductor chip; 123, second adhesive layer; 124, second semiconductor chip; 125, third adhesive layer; 130, package base layer; 140, first plastic layer; 150, connector; 160, package body; 170, position limiting support layer; 171, support material layer; 1710, connection through hole; 1711, support part ; 17110, supporting material layer; 17111, side notch; 17112, groove cavity; 1712, limiting portion; 1720, connecting through hole; 1721, supporting portion; 17211, side notch; 17212, groove cavity; 17221, first limiting sub-portion; 17222, second limiting sub-portion; 1730, connecting through hole; 1731, supporting portion; 17310, supporting material layer; 1732, limiting portion; 17320, limiting material layer; 180, third plastic sealing layer. DETAILED DESCRIPTION

[0056] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present disclosure. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0058] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. The manner of electrical connection is used to indicate that current can be conducted between multiple electrically connected elements, and the specific manner may be that one element directly contacts another element, or that one element is connected to another element through other conductive elements. On the contrary, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

[0059] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0060] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0061] The present disclosure provides a package stacking structure, which includes:

[0062] A first package, the first package includes an interposer, the interposer includes an interposer base layer and a plurality of connection pads disposed on the interposer base layer, the interposer base layer has a support area and a limiting area located between the support areas, and the connection pads and areas between adjacent connection pads are located in the limiting area;

[0063] A limiting support layer, the limiting support layer is arranged on the intermediate layer, and the limiting support layer includes a supporting portion arranged on the supporting area and a limiting portion arranged on the limiting area;

[0064] The second package includes a package body and a plurality of connectors connected to the package body, the connectors are connected to corresponding connection pads, the limiting portion covers the connectors, the package body contacts the supporting portion, and the supporting portion, the limiting portion, the package body and the intermediate base layer form a closed space, and the connectors are arranged in the closed space.

[0065] In the package stacked structure, the limiting support layer includes a support portion and a limiting portion located between the support portions, and the limiting portion is arranged on the intermediary layer between adjacent connection pads, and the supporting portion, the limiting portion, the package body and the intermediary base layer form a closed space to seal the connector and the connection pad, thereby preventing air and moisture from penetrating between the two semiconductor devices, improving the reliability of the connection pad and the connector, and reducing the risk of delamination of the package stacked structure. In addition, the limiting portion covers the connector to space adjacent connectors, which also has the function of protecting the connector and preventing short circuits between the connectors.

[0066] For ease of understanding, Figure 1 A schematic structural diagram of a longitudinal section of a package stacking structure disclosed in the present invention is shown, and the package stacking structure includes a first package, a limiting support layer 170 and a second package.

[0067] Reference Figure 1 As shown, the first package includes an interposer 110, and the interposer 110 includes an interposer base layer 112 and a plurality of connection pads 111 disposed on the interposer base layer 112. In some examples of this embodiment, the plurality of connection pads 111 are distributed in an array.

[0068] Reference Figure 1As shown, the first package also includes a first chip structure 120 and a package base layer 130. The first chip structure 120 is disposed on a side surface of the intermediate base layer 112 away from the connection pad 111. In some examples of this embodiment, the first chip structure 120 includes a first adhesive layer 121, a first semiconductor chip 122, a second adhesive layer 123, a second semiconductor chip 124, and a third adhesive layer 125 which are sequentially stacked in a direction away from the intermediate base layer 112. The first adhesive layer 121 is disposed between the first semiconductor chip 122 and the intermediate base layer 112, and is used to combine and fix the first semiconductor chip 122 and the intermediate base layer 112. The second adhesive layer 123 is disposed between the first semiconductor chip 122 and the second semiconductor chip 124, and is used to combine and fix the first semiconductor chip 122 and the second semiconductor chip 124. The third adhesive layer 125 is disposed between the second semiconductor chip 124 and the package base layer 130, and is used to combine and fix the second semiconductor chip 124 and the package base layer 130. The package substrate layer 130 may have embedded circuits therein, and the first semiconductor chip 122 and the second semiconductor chip 124 are electrically connected to the package substrate layer 130 through respective leads.

[0069] The first semiconductor chip 122 and the second semiconductor chip 124 can be independently selected from one or more of a logic chip, a memory chip and a storage chip. In this embodiment, the first semiconductor chip 122 and the second semiconductor chip 124 are both memory chips.

[0070] Reference Figure 1 As shown, the first package further includes a first plastic encapsulation layer 140 , and the first plastic encapsulation layer 140 is disposed around the interposer 110 . Furthermore, the first plastic encapsulation layer 140 is also disposed around the first chip structure 120 .

[0071] Reference Figure 1 As shown, the second package may include a package body 160 and a connector 150 connected to the second package body 160, and the connector 150 is protruding from the second package body 160. The package body 160 may have a second chip structure. The second chip structure may include one or more of a logic chip, a memory chip, and a storage chip.

[0072] In some examples of this embodiment, the second package may further include a second plastic encapsulation layer (not shown in the figure). The second plastic encapsulation layer may be located in the package body 160 and used to cover the second chip structure in the package body 160. Figure 1As shown, the limiting support layer 170 is arranged between the first package and the second package. In some examples of this embodiment, the intermediate base layer 112 has a support area and a limiting area located between the support areas, and the limiting support layer 170 includes a supporting portion and a limiting portion. Among them, the supporting portion is arranged on the supporting area of ​​the intermediate base layer 112, and the limiting portion is arranged on the limiting area of ​​the intermediate base layer 112. It can be understood that the supporting portion can be arranged only on part of the supporting area, and the limiting portion can also be arranged only on part of the limiting area. The connection pad 111 is exposed from the limiting portion. For example, a connecting through hole exposing the connection pad 111 can be provided in the limiting portion. The connector 150 is covered by the limiting portion.

[0073] In some examples of this embodiment, the limiting support layer 170 fills the gap between the first package and the second package, and the limiting support layer 170 , the intermediate base layer 112 and the package body 160 together seal the connector 150 .

[0074] In some examples of this embodiment, the elastic modulus of the support portion is greater than the elastic modulus of the first plastic encapsulation layer 140 , so that the deformation of the support portion is smaller than that of the first plastic encapsulation layer 140 , which is more conducive to supporting the second package.

[0075] In some examples of this embodiment, the elastic modulus of the support portion is greater than the elastic modulus of the second plastic encapsulation layer, so that the deformation of the support portion is smaller than that of the second plastic encapsulation layer, which is more conducive to maintaining the structure of the first package.

[0076] In some examples of this embodiment, the hardness of the support portion is greater than the hardness of the first plastic encapsulation layer 140 , so that the structure of the support portion is more stable relative to the first plastic encapsulation layer.

[0077] In some examples of this embodiment, the hardness of the support portion is greater than the hardness of the second plastic encapsulation layer, so that the structure of the support portion is more stable relative to the second plastic encapsulation layer.

[0078] Figure 1 The illustrated limiting support layer 170 is entirely disposed on the intermediate layer 110 , but in other embodiments, the limiting support layer 170 may also be extended and disposed on the first plastic packaging layer 140 .

[0079] In some examples of this embodiment, a third plastic encapsulation layer 180 is further included, and the third plastic encapsulation layer 180 is arranged between the first package and the second package, and the third plastic encapsulation layer 180 is arranged around the limiting support layer 170. The third plastic encapsulation layer 180 is used to encapsulate the periphery of the limiting support layer 170. Among them, the material of the third plastic encapsulation layer 180 includes a plastic encapsulation material, and the plastic encapsulation material can be one or more of epoxy resin and silicone rubber. The third plastic encapsulation layer 180 can be prepared by a molded bottom filling process or an injection molding process. The third plastic encapsulation layer 180 can not only be used to encapsulate the limiting support layer 170, but also can strengthen the bonding strength between the first package, the second package and the limiting support layer 170, and further reduce the delamination risk of the package stacked structure.

[0080] In some examples of this embodiment, in the limiting support layer 170, the surface of the side of the limiting portion away from the first package is flush with the surface of the side of the supporting portion away from the first package. Further, the surface of the side of the limiting support layer 170 away from the first package is flush with the surface of the side of the third plastic sealing layer 180 away from the first package. By setting the surface of the limiting portion to be flush with the surface of the supporting portion, and the surface of the limiting support layer 170 to be flush with the surface of the third plastic sealing layer 180, the gap between the second package and the limiting support layer 170 or the third plastic sealing layer 180 can be reduced as much as possible, thereby improving the sealing performance of the connector 150.

[0081] In some examples of this embodiment, the third molding layer 180 and the support portion are made of different materials.

[0082] Furthermore, in some examples of this embodiment, the contact area between the support portion and the package body 160 is greater than the contact area between the third plastic encapsulation layer 180 and the package body 160. Since the deformation of the support portion is small, the warping of the entire package structure can be improved.

[0083] In the limiting support layer 170, the limiting portion and the supporting portion may be made of the same material or different materials. When the limiting portion and the supporting portion are made of the same material, the limiting portion and the supporting portion may also have the same thickness.

[0084] In some examples of this embodiment, the thermal conductivity of the support portion is greater than the thermal conductivity of the intermediate base layer, so that the heat generated by the connector 150 is conducted to the support portion more quickly, reducing the effect of the heat generated by the connector 150 on the first package. It is understood that the thermal conductivity of the material of the support portion can be increased by doping the support portion with a thermally conductive material (such as metal).

[0085] In some examples of this embodiment, the material of the limiting part is the same as that of the third plastic encapsulation layer 180. At this time, the thermal expansion coefficient of the limiting part can be controlled to be smaller than that of the supporting part to prevent the limiting part and the third plastic encapsulation layer 180 from squeezing the supporting part when the device is heated.

[0086] Figure 2 FIG. 1 is a schematic diagram of a cross-sectional structure of a limiting support layer 170 disclosed in the present invention. Figure 2 As shown, the limiting support layer 170 includes a limiting portion 1712 and a supporting portion 1711. A plurality of connecting through holes 1710 corresponding to the connecting pads 111 are provided in the limiting support layer 170. The connecting through holes 1710 are used to expose the connecting pads 111 and to accommodate the connecting member 150 on the second package. In addition, a limiting portion 1712 is provided on the intermediary layer 110 between adjacent connecting pads 111, and the limiting portion 1712 is provided between the supporting portions 1711.

[0087] Reference Figure 2 As shown, in some examples of this embodiment, a limiting groove is provided in the support portion 1711 to expose the area where all the connection pads 111 are located, and the limiting portion 1712 is provided in the limiting groove. The limiting groove includes two side notches 17111 opened on the side wall of the support portion 1711 and a groove cavity 17112 connected to the two side notches 17111, and the limiting portion 1712 is filled in the groove cavity 17112 of the limiting groove. In the actual preparation process, the support portion 1711 with the limiting groove can be prepared first, and after the connector 150 on the second package is connected to the connection pad 111, the material of the limiting portion 1712 is injected into the groove cavity 17112 through the side notches 17111 of the limiting groove to form the limiting portion 1712.

[0088] By forming the groove cavity 17112 that exposes all the connection pads 111, a relatively spacious operation space can be provided, which facilitates the connection of the connector 150 to the connection pads 111 by welding. By forming two side notches 17111, it is convenient to inject material into the limiting portion 1712 and to discharge gas in the groove cavity 17112, which effectively improves the problem of voids that may exist in the limiting portion 1712 prepared later.

[0089] In some examples of this embodiment, the distance between the cavity wall of the groove cavity 17112 and the closest connection pad 111 is greater than or equal to half the distance between adjacent connection pads 111. By designing the distance between the cavity wall of the groove cavity 17112 and the connection pad 111 to be wider, it is helpful for the material of the limiting portion 1712 to flow and completely cover the connector 150.

[0090] In some examples of this embodiment, the distance between the cavity wall of the cavity 17112 and the closest connection pad 111 is ≥ 200 μm. Further, the distance between the cavity wall of the cavity 17112 and the closest connection pad 111 is 200 μm to 1000 μm.

[0091] Reference Figure 2As shown, the groove cavity 17112 has two adjacent cavity walls, wherein the distance between one cavity wall and the connection pad 111 is L1, and the distance between the other side wall and the connection pad 111 is L2. Depending on the specific design, L1 and / or L2 may be the minimum distance between the cavity wall of the groove cavity 17112 and the connection pad 111. The width between adjacent connection pads is d, then L1≥d / 2, and / or L2≥d / 2. Optionally, L1≥200μm, and / or L2≥200μm. Further optionally, L1 is 200μm to 1000μm, and / or L2 is 200μm to 1000μm. By designing the spacing between the cavity wall of the groove cavity 17112 and the connection pad 111 to be above 200μm, the material of the limiting portion 1712 can have better fluidity during injection, and the voids in the limiting portion 1712 can be minimized. By designing the distance between the cavity wall of the groove cavity 17112 and the connection pad 111 to be less than 1000 μm, it is helpful to assist in limiting the position of the connection member 150 and improve the alignment accuracy between the connection member 150 and the connection pad 111.

[0092] In some examples of this embodiment. The material of the limiting portion 1712 is different from the material of the supporting portion 1711. For example, the material of the supporting portion 1711 may include an etchable material to simplify the preparation of the supporting portion 1711. The etchable material may be selected from one or more of silicon oxide, silicon nitride, silicon oxynitride, and photoresist. The material of the limiting portion 1712 may include a molding material, for example, the molding material may be one or more of epoxy resin and silicone resin.

[0093] Furthermore, the material of the support portion 1711 may include photoresist, and the photoresist may be formed by spin coating, so that a thicker support portion 1711 can be formed in a shorter time, thereby providing higher preparation efficiency.

[0094] Furthermore, the thermal expansion coefficient of the supporting portion 1711 is greater than that of the limiting portion 1712 , so that the limiting portion 1712 has a lower thermal expansion coefficient, which can improve the squeezing of the limiting portion 1712 on the supporting portion 1711 .

[0095] Furthermore, the thermal conductivity of the support portion 1711 is greater than the thermal conductivity of the intermediate base layer 112, so that when the connector 150 is soldered to the connection pad 111, more heat is dissipated to the support portion 1711, thereby reducing the impact on the first package during the packaging process. For example, the material of the support portion 1711 may also include doped metal to improve the thermal conductivity of the support portion 1711.

[0096] In some examples of this embodiment, the materials of the limiting portion 1712 and the supporting portion 1711 may also be the same. For example, the materials of the limiting portion 1712 and the supporting portion 1711 may be jointly selected from one or more of silicon oxide, silicon nitride, silicon oxynitride, photoresist, and plastic packaging materials.

[0097] Furthermore, the thermal expansion coefficient of the entire limiting support layer 170 may be between the thermal expansion coefficient of the first package and the thermal expansion coefficient of the second package, so as to improve or avoid the problem of warping of the package stacked structure during use.

[0098] Furthermore, internal filling particles may be provided in the material of the supporting portion 1711 and the material of the limiting portion 1712, and the particle size of the internal filling particles in the supporting portion 1711 is larger than the particle size of the internal filling particles in the limiting portion 1712, so as to improve the fluidity of the limiting portion 1712 relative to the supporting portion 1711 during the preparation process and improve the void problem existing in the limiting portion 1712.

[0099] Further, in some examples of this embodiment, the material of the limiting portion 1712 is the same as the material of the third plastic packaging layer 180 .

[0100] Figure 3 FIG. 1 is a schematic diagram of a cross-sectional structure of another limiting support layer 170 disclosed in the present invention. Figure 3 As shown, the limiting support layer 170 includes a limiting portion and a supporting portion 1721, the limiting portion includes a first limiting sub-portion 17221 and a second limiting sub-portion 17222, and the second limiting sub-portion 17222 can be arranged between the first limiting sub-portions 17221. The limiting support layer 170 is provided with a plurality of connecting through holes 1720 corresponding to the connecting pads 111, and the connecting through holes 1720 are used to expose the connecting pads 111 and to accommodate the connecting member 150 on the second package. The intermediate layer 110 between adjacent connecting pads 111 is provided with a limiting portion, and the limiting portion is arranged between the supporting portions 1721.

[0101] Reference Figure 3 As shown, the second limiting sub-portion 17222 is disposed on the intermediate layer 110 between adjacent connection pads 111. The second limiting sub-portion 17222 is used to prevent adjacent connection members 150 from short-circuiting during the actual manufacturing process.

[0102] Reference Figure 3As shown, there is a second limiting sub-portion 17222 between the adjacent connecting pads 111 in the transverse direction, and this part of the second limiting sub-portion 17222 is used to space the adjacent connecting pads 111 in the transverse direction. There may also be a second limiting sub-portion 17222 between the adjacent connecting pads 111 in the longitudinal direction, and this part of the second limiting sub-portion 17222 is used to space the adjacent connecting pads 111 in the longitudinal direction. At the same time, since there is a gap between the second limiting sub-portion 17222 and the connecting pad 111, when the connecting member 150 is welded to the connecting pad 111, it is also possible to prevent the connecting member 150 from touching the second limiting sub-portion 17222 when the connecting member is slightly offset, thereby improving the welding quality. Furthermore, there is a through channel in the second limiting sub-portion 17222 to facilitate the passage of the material of the first limiting sub-portion 17221 prepared later.

[0103] Figure 3 The second limiting sub-portion 17222 shown does not completely surround the connection pad 111. It can be understood that Figure 3 The configuration of the second limit sub-portion 17222 is shown in FIG. 1 , but the configuration of the second limit sub-portion 17222 is not limited to Figure 3 For example, in some other examples, the second limiting sub-portion 17222 may also completely surround the side of the connection pad 111, in which case the connection through hole 1720 is disposed in the second limiting sub-portion 17222 and passes through the second limiting sub-portion 17222, and the first limiting sub-portion 17221 is disposed on a side of the second limiting sub-portion 17222 away from the connection member 150.

[0104] For example, in some other examples, there may be multiple second limiting sub-portions 17222 corresponding to multiple connection pads 111, and each second limiting sub-portion 17222 is provided with a connection through hole 1720 exposing the corresponding connection pad 111. Adjacent second limiting sub-portions 17222 are arranged at intervals, and the gaps between adjacent second limiting sub-portions 17222 may be provided with first limiting sub-portions 17221.

[0105] Reference Figure 3 As shown, in some examples of this embodiment, a limiting groove is also provided in the support portion 1721 to expose the area where all the connection pads 111 are located, and the limiting portion is provided in the limiting groove. The limiting groove includes two side notches 17211 opened on the side wall of the support portion 1721 and a groove cavity 17212 connected to the two side notches 17211, and the limiting portion is filled in the groove cavity 17212 of the limiting groove. In the actual preparation process, the second limiting sub-portion 17222 and the support portion 1721 with the limiting groove can be prepared first, and after the connector 150 on the second package is connected to the connection pad 111, the material of the first limiting sub-portion 17221 is injected into the groove cavity 17212 through the side notches 17211 of the limiting groove to form the limiting portion.

[0106] In some examples of this embodiment, the material of the first limiting sub-portion 17221 is different from the material of the supporting portion 1721. For example, the material of the supporting portion 1721 may include an etchable material to simplify the preparation of the supporting portion 1721. The etchable material may be selected from one or more of silicon oxide, silicon nitride, silicon oxynitride, and photoresist. The material of the first limiting sub-portion 17221 may be selected from a molding material, for example, the molding material may be one or more of epoxy resin and silicone resin.

[0107] In some examples of this embodiment, the material of the second limiting sub-portion 17222 is the same as that of the supporting portion 1721. In an actual manufacturing process, the second limiting sub-portion 17222 and the supporting portion 1721 can be manufactured at the same time.

[0108] Furthermore, the material of the support portion 1721 may include photoresist, and the photoresist may be formed by spin coating, so that a thicker support portion 1721 can be formed in a shorter time, thereby providing higher preparation efficiency.

[0109] Furthermore, the thermal expansion coefficient of the support portion 1721 is greater than that of the first limiting sub-portion 17221 , so that the first limiting sub-portion 17221 has a lower thermal expansion coefficient, which can improve the extrusion of the first limiting sub-portion 17221 on the support portion 1721 .

[0110] Furthermore, the thermal conductivity of the support portion 1721 is greater than the thermal conductivity of the intermediate base layer 112, so that when the connector 150 is soldered to the connection pad 111, more heat is dissipated to the support portion 1721, thereby reducing the impact on the first package during the packaging process. For example, the material of the support portion 1721 may also include doped metal to improve the thermal conductivity of the support portion 1721.

[0111] In some examples of this embodiment, the first limiting sub-portion 17221 and the supporting portion 1721 may also be made of the same material. For example, the first limiting sub-portion 17221 and the supporting portion 1721 may be made of one or more materials selected from silicon oxide, silicon nitride, silicon oxynitride, photoresist, and plastic packaging materials.

[0112] Furthermore, the thermal expansion coefficient of the limiting support layer 170 may be between the thermal expansion coefficient of the first package and the thermal expansion coefficient of the second package, so as to improve or avoid the problem of warping of the package stacked structure during use.

[0113] Furthermore, internal filling particles may be provided in the material of the supporting portion 1721 and the material of the first limiting sub-portion 17221, and the particle size of the internal filling particles in the supporting portion 1721 is larger than the particle size of the internal filling particles in the first limiting sub-portion 17221, so as to improve the fluidity of the first limiting sub-portion 17221 relative to the supporting portion 1721 during the preparation process and improve the void problem existing in the first limiting sub-portion 17221.

[0114] Further, in some examples of this embodiment, the material of the first limiting sub-portion 17221 is the same as the material of the third plastic packaging layer 180 .

[0115] Figure 4 FIG. 1 is a schematic diagram of a cross-sectional structure of a limiting support layer 170 disclosed in the present invention. Figure 4 As shown, the limiting support layer 170 includes a limiting portion 1732 and a supporting portion 1731. The limiting support layer 170 is provided with a plurality of connecting through holes 1730 corresponding to the connecting pads 111, and the connecting through holes 1730 are used to expose the connecting pads 111 and to accommodate the connecting member 150 on the second package. In addition, a limiting portion 1732 is provided on the intermediary layer 110 between adjacent connecting pads 111, and the limiting portion 1732 is provided between the supporting portions 1731.

[0116] In some examples of this embodiment, the limiting portion 1732 is made of the same material as the supporting portion 1731. For example, the materials of the limiting portion 1732 and the supporting portion 1731 can be selected from one or more of silicon oxide, silicon nitride, silicon oxynitride, photoresist, and plastic packaging materials. It can be understood that the limiting portion 1732 and the supporting portion 1731 of the limiting support layer 170 can be prepared using the same raw materials, so that the material of the limiting portion 1732 is the same as the material of the supporting portion 1731.

[0117] For example, the preparation method of the limiting support layer 170 includes the following steps: coating a support material layer on the intermediary layer 110, removing the support material layer on the connection pad 111 to expose the connection pad 111, and forming the limiting support layer 170. The method of removing the support material layer can be etching. It can be understood that the limiting portion 1732 of the limiting support layer 170 is located on the intermediary layer 110 between adjacent connection pads 111.

[0118] Furthermore, the thermal expansion coefficient of the limiting support layer 170 may be between the thermal expansion coefficient of the first package and the thermal expansion coefficient of the second package, so as to improve or avoid the problem of warping of the package stacked structure during use.

[0119] Furthermore, internal filling particles may be provided in the material of the supporting portion 1731 and the material of the limiting portion 1732, and the particle size of the internal filling particles in the supporting portion 1731 is larger than the particle size of the internal filling particles in the limiting portion 1732, so as to improve the fluidity of the limiting portion 1732 relative to the supporting portion 1731 during the preparation process and improve the void problem existing in the limiting portion 1732.

[0120] In some examples of this embodiment, the material of the limiting portion 1732 may be different from the material of the supporting portion 1731. For example, the material of the supporting portion 1731 includes an etchable material, and the etchable material may be selected from one or more of silicon oxide, silicon nitride, silicon oxynitride, and photoresist. The material of the limiting portion 1732 is selected from a plastic encapsulation material. In the actual preparation process, a part of the limiting support layer 170 may be formed first to plan the area where the limiting portion 1732 is located, and then the material of the limiting portion 1732 is filled into the supporting portion 1731 to form the limiting portion 1732.

[0121] Furthermore, the material of the support portion 1731 may include photoresist, and the photoresist may be formed by spin coating, so that a thicker support portion 1731 can be formed in a shorter time, thereby providing higher preparation efficiency.

[0122] Furthermore, the thermal expansion coefficient of the support portion 1731 is greater than that of the limiting portion 1732 , so that the limiting portion 1732 has a lower thermal expansion coefficient, which can improve the extrusion of the limiting portion 1732 on the support portion 1731 .

[0123] Furthermore, the thermal conductivity of the support portion 1731 is greater than the thermal conductivity of the intermediate base layer 112, so that when the connector 150 is soldered to the connection pad 111, more heat is dissipated to the support portion 1731, thereby reducing the impact on the first package during the packaging process. For example, the material of the support portion 1731 may also include a metal-doped material to improve the thermal conductivity of the support portion 1731.

[0124] In some examples of this embodiment, the limiting portion 1732 may be made of the same material as the third plastic encapsulation layer 180. In the actual preparation process, the support portion 1731 of the limiting support layer 170 may be formed first, and then the limiting portion 1732 may be formed in the support portion 1731 by injection molding or molding bottom filling.

[0125] The present disclosure also provides a method for preparing the package stacked structure in the above embodiment, which comprises the following steps:

[0126] A first package including an interposer is provided, wherein the interposer includes an interposer base layer and a plurality of connection pads disposed on the interposer base layer, wherein the interposer base layer has a support area and a limiting area located between the support areas, and the connection pads and areas between adjacent connection pads are located in the limiting area;

[0127] Prepare a support portion on the support area of ​​the intermediary layer, and prepare a limiting portion on the limiting area of ​​the intermediary layer to form a limiting support layer including the support portion and the limiting portion, and the connection pad is exposed from the limiting portion;

[0128] A second package including a package body and a plurality of connectors is provided, the connectors are connected to the package body, the connectors are connected to corresponding connection pads, and the package body is contacted to the support portion.

[0129] Figure 5 A schematic diagram of the steps of preparing the above-mentioned packaging stacked structure is shown. Figure 5 As shown, the method for preparing the package stacked structure includes steps S11 to S15.

[0130] Step S11, providing a first package.

[0131] Figure 6 A schematic structural diagram of a first package including an interposer 110 is shown.

[0132] Reference Figure 6 As shown, the first package includes an interposer 110, and the interposer 110 includes an interposer base layer 112 and a plurality of connection pads 111 disposed on the interposer base layer 112. The plurality of connection pads 111 are distributed in an array.

[0133] Reference Figure 6 As shown, the first package further includes a first chip structure 120 and a first plastic encapsulation layer 140 . The first plastic encapsulation layer 140 is disposed around the interposer 110 and the first chip structure 120 , and is used to encapsulate the sidewalls of the interposer 110 and the first chip structure 120 .

[0134] Among them, it is necessary to prepare a limiting support layer 170 on the intermediate layer 110 later, and the limiting support layer 170 includes a supporting portion 1711 and a limiting portion 1712. The limiting portion 1712 is located between the supporting portions 1711. An opening is opened in the limiting support layer 170 to expose the connection pad 111, and the limiting portion 1712 is set on the intermediate layer 110 between adjacent connection pads 111. It can be understood that corresponding to the limiting support layer 170 of different structures, the specific preparation method of the limiting support layer 170 can also be different to obtain a packaging stacked structure with a better packaging effect. The cross-section of the limiting support layer 170 in this embodiment is as follows Figure 3 A cross-sectional schematic diagram of the limiting support layer 170 is shown in FIG.

[0135] Step S12 , preparing a support portion 1721 on the interposer 110 .

[0136] Among them, the support portion 1721 is provided with a Figure 3 The limit slot shown.

[0137] In some examples of this embodiment, preparing the support portion 1721 includes the following steps: preparing a support material layer 17210 on the interposer 110 , and etching the support material layer 17210 to obtain a limiting through groove and form the support portion 1721 .

[0138] Figure 7 Shown in Figure 6 Schematic diagram of the structure of preparing the support material layer 17210 on the structure shown. Figure 7 As shown, the support material layer 17210 can cover the entire interposer 110. The material of the support material layer 17210 includes an etchable material. In this embodiment, the material of the support material layer 17110 includes photoresist.

[0139] In some examples of this embodiment, when preparing the support material layer 17210, the thickness of the support material layer 17210 can be controlled to be 240 μm to 1000 μm. For example, the thickness of the support material layer 17210 is controlled to be 240 μm, 320 μm, 480 μm, 600 μm, 800 μm or 1000 μm. Of course, the thickness of the prepared support material layer 17210 can also be within the range between any two thicknesses mentioned above.

[0140] In some examples of this embodiment, the step of preparing the support material layer 17210 may include: coating a raw material including a photoresist on the interposer 110, and drying the raw material including the photoresist. The purpose of drying is to initially remove the solvent in the photoresist, so that the photoresist is initially shaped to form the support material layer 17210.

[0141] In some examples of this embodiment, the drying temperature may be 100° C. to 150° C. Optionally, the drying temperature may be 100° C., 110° C., 120° C., 130° C., 140° C. or 150° C. Of course, the drying temperature may also be within the range of any two of the above temperatures.

[0142] In some examples of this embodiment, the duration of drying may be 15 minutes to 30 minutes. Optionally, the duration of drying is 15 minutes, 18 minutes, 20 minutes, 22 minutes, 25 minutes or 30 minutes. Of course, the duration of drying may also be within the range of any two of the above time periods.

[0143] Through the drying process of the above process, a support material layer 17210 with a relatively fixed shape can be formed.

[0144] Figure 8 Shown in Figure 7 The structure diagram of the support portion 1721 is formed on the structure shown. Figure 8As shown in FIG. 1 , the support material layer 17210 is etched to form a support portion 1721. The support portion 1711 has Figure 3 The groove cavity 17212 is shown.

[0145] In some examples of this embodiment, the method of etching the support material layer 17210 is exposure and development. It can be understood that the exposure and development process includes exposure and development. Exposure refers to irradiating a predetermined area of ​​the support material layer 17210 with radiation such as ultraviolet light to denature the support material layer 17210 in the area, and development refers to soaking or washing the support material layer 17210 after the exposure process with a developer to remove the undenatured or denatured part, which depends on the specific type of photoresist.

[0146] In some examples of this embodiment, in order to obtain a support portion 1721 with more suitable mechanical properties, the step of preparing the support portion 1721 may further include: heating the support material layer 17210 after the exposure and development process to vitrification to form the support portion 1721. The polymer material can be vitrified when heated to a temperature above the glass transition temperature, which can completely solidify the shape of the support material layer 17210 after the exposure and development process, so as to have more suitable mechanical strength, and play a better blocking and limiting role for the subsequent second package.

[0147] In some examples of this embodiment, when etching the support material layer 17210, a portion of the support material layer 17210 located on the limiting area is retained to form Figure 3 The second limiting sub-portion 17222 is shown in FIG.

[0148] It is understandable that if one wants to prepare Figure 2 The limiting support layer shown can remove part of the support material layer on the limiting area in this step.

[0149] Step S13 , connecting the connecting member 150 on the second package to the connecting pad 111 .

[0150] Fig. 9 Shown in Figure 8 The schematic diagram of the structure of the second package connected to the structure shown. Fig. 9 As shown, the second package includes a connector 150 and a package body 160 . The connector 150 is connected to the package body 160 and protrudes from the surface of the package body 160 so as to extend into the limiting through groove of the support portion 1721 .

[0151] The step of connecting the connector 150 of the second package to the connection pad 111 includes: aligning the connector 150 on the second package with the connection pad 111 on the interposer 110, so that the connector 150 is connected to the connection pad 111. In the step of connecting the connector 150 to the connection pad 111, the package body 160 of the second package is controlled to contact the support portion 1721 to seal the connector 150. Further, the package body 160 of the second package is close to the support portion 1721.

[0152] In some examples of this embodiment, the connector 150 may be prepared after the package body 160 is pressed down onto the support portion 1721, and connected to the connection pad 111 during the preparation process. For example, a metal material may be sprayed toward the package body 160 by ball planting to form the connector 150 connected to the connection pad 111.

[0153] Step S14 , preparing a limiting portion 1712 on the interposer 110 .

[0154] Fig.10 Shown in Fig. 9 The structure diagram of the limiter 1712 is shown in FIG. Fig.10 As shown, the limiting portion 1712 is prepared between the first package and the second package, and is filled in the limiting through groove of the limiting portion 1712 .

[0155] It can be understood that the material of the limiting portion 1712 can be the same as the material of the supporting portion 1721 or different from the material of the supporting portion 1721 .

[0156] In some examples of this embodiment, the material of the limiting portion 1712 may be selected from a molding material, such as one or more of epoxy resin and silicone resin.

[0157] In some examples of this embodiment, the method for preparing the limiting portion 1712 may be an injection molding process or a molding bottom filling process. During the preparation process, the material of the limiting portion 1712 may be injected into the support portion 1721 through one of the side notches 17211 of the limiting through groove of the support portion 1721. During the injection process, the gas may be discharged from the other side notch 17211, thereby reducing the voids in the formed limiting portion 1712 and improving the filling quality.

[0158] It can be understood that, since the limiting portion 1712 is filled in the limiting through groove, the surface of the limiting portion 1712 is flush with the surface of the supporting portion 1721 .

[0159] Step S15 , preparing a third plastic packaging layer 180 around the limiting support layer 170 .

[0160] Fig.11 Shown in Fig.10 The schematic diagram of the structure of preparing the third plastic encapsulation layer 180 on the structure shown. Fig.11 As shown, the third plastic sealing layer 180 is disposed around the limiting support layer 170 .

[0161] In some examples of this embodiment, the material of the third molding layer 180 includes a molding material, such as one or more of epoxy resin and silicone resin.

[0162] In some examples of this embodiment, the third molding layer 180 may be prepared by an injection molding process or a molding underfill process.

[0163] In some examples of this embodiment, the material of the third plastic encapsulation layer 180 is the same as the material of the limiting portion 1712. Further, the third plastic encapsulation layer 180 can be prepared simultaneously with the limiting portion 1712. For example, when the material of the limiting portion 1712 is filled into the limiting groove of the support portion 1721, the material of the limiting portion 1712 is also filled around the intermediate layer 110 to simultaneously prepare and form the third plastic encapsulation layer 180.

[0164] It can be understood that since the third plastic encapsulation layer 180 is filled between the first package and the second package, the surface of the third plastic encapsulation layer 180 is close to the package body 160 , and the surface of the third plastic encapsulation layer 180 is flush with the surface of the limiting support layer 170 .

[0165] It can be understood that through steps S11 to S15, the package stacking structure of the present disclosure can be prepared. The package stacking structure is provided with a support portion in contact with the second package and the first package to seal the connector and the connection pad, thereby preventing air and moisture from penetrating between the first package and the second package, thereby improving the reliability of the package.

[0166] Fig.12 A schematic diagram of the steps of another method for preparing the above-mentioned package stacked structure is shown. Fig.12 As shown, the method for preparing the package stacked structure includes steps S21 to S24.

[0167] Step S21, providing an intermediate layer.

[0168] Fig.13 A schematic structural diagram of an intermediate layer 110 is shown.

[0169] Reference Fig.13 As shown, the interposer 110 includes an interposer base layer 112 and a plurality of connection pads 111 disposed on the upper surface of the interposer base layer 112. The plurality of connection pads 111 are distributed in an array.

[0170] In which, it is necessary to prepare a limiting support layer 170 on the intermediate layer 110 later, and the limiting support layer 170 includes a support portion 1731 and a limiting portion 1732. The limiting portion 1732 is located between the support portions 1731. An opening exposing the connection pad 111 is opened in the limiting support layer 170, and the limiting portion 1732 is provided on the intermediate layer 110 between adjacent connection pads 111. It can be understood that corresponding to the limiting support layer 170 of different structures, the specific preparation method of the limiting support layer 170 can also be different to obtain a packaging stacked structure with a better packaging effect. The cross-section of the limiting support layer 170 in this embodiment is similar to Figure 4 A cross-sectional schematic diagram of the limiting support layer 170 is shown in FIG.

[0171] Step S22 , preparing a limiting support layer 170 on the intermediate layer 110 .

[0172] The limiting support layer 170 is provided with Figure 4 A plurality of connecting through holes 1730 are shown to expose the connecting pads 111 on the interposer 110 .

[0173] In some examples of this embodiment, preparing the limiting support layer 170 includes the following steps: preparing a supporting material layer 17310 and a limiting material layer 17320 on the intermediate layer 110, the supporting material layer 17310 and the limiting material layer 17320 entirely cover a side surface of the intermediate layer 110 on which the connecting pad 111 is provided, and etching the limiting material layer 17320 to obtain a limiting support layer 170 having a connecting through hole 1730.

[0174] Fig.14 Shown in Fig.13 A schematic diagram of the structure of preparing a support material layer 17310 and a limiting material layer 17320 on the structure shown. Fig.14 As shown, the support material layer 17310 and the limiting material layer 17320 can cover the entire intermediate layer 110 .

[0175] The material of the limiting material layer 17320 may include an etchable material. In this embodiment, the material of the limiting material layer 17320 includes photoresist.

[0176] In some examples of this embodiment, the step of preparing the limiting material layer 17320 may include: coating a raw material including a photoresist on the interposer 110, and drying the raw material including the photoresist. The purpose of drying is to initially remove the solvent in the photoresist, so that the photoresist is initially shaped to form the limiting material layer 17320.

[0177] In some examples of this embodiment, the drying temperature may be 100° C. to 150° C. Optionally, the drying temperature may be 100° C., 110° C., 120° C., 130° C., 140° C. or 150° C. Of course, the drying temperature may also be within the range of any two of the above temperatures.

[0178] In some examples of this embodiment, the duration of drying may be 15 minutes to 30 minutes. Optionally, the duration of drying is 15 minutes, 18 minutes, 20 minutes, 22 minutes, 25 minutes or 30 minutes. Of course, the duration of drying may also be within the range of any two of the above time periods.

[0179] Through the drying process of the above process, a limiting material layer 17320 with a relatively fixed shape can be formed.

[0180] In some examples of this embodiment, the material of the support material layer 17310 is the same as the material of the limiting material layer 17320, and the support material layer 17310 and the limiting material layer 17320 are prepared simultaneously to simplify the preparation steps of the limiting support layer 170. For example, a raw material including a photoresist is coated on the interposer 110, and the material located in the region where the limiting portion 1732 is located is used as the limiting material layer 17320, and the material located in the region where the supporting portion 1731 is located is used as the support material layer 17310.

[0181] In some examples of this embodiment, when preparing the support material layer 17310, the thickness of the support material layer 17310 can be controlled to be 240 μm to 1000 μm. For example, the thickness of the support material layer 17310 is controlled to be 240 μm, 320 μm, 480 μm, 600 μm, 800 μm or 1000 μm. Of course, the thickness of the prepared support material layer 17310 can also be within the range between any two thicknesses mentioned above.

[0182] Fig.15 Shown in Fig.14 The structure diagram of the limiting support layer 170 is formed on the structure shown. Fig.15 As shown, the limiting material layer 17320 is etched to form a limiting portion 1732 .

[0183] It can be understood that the surface of the limiting portion 1732 is flush with the surface of the supporting portion 1731 .

[0184] In some examples of this embodiment, the method of etching the limiting material layer 17320 is exposure and development.

[0185] It can be understood that the support material layer 17310 can be directly used as the support portion 1731. In some examples of this embodiment, in order to obtain a support portion 1731 with more suitable mechanical properties, the step of preparing the support portion 1731 may also include: heating the support material layer 17310 to vitrification to form the support portion 1731. Among them, the polymer material can undergo vitrification when heated to a temperature above the vitrification temperature, which is to completely solidify the shape of the support material layer 17310 after the exposure and development process, so as to have a more suitable mechanical strength, and to play a better blocking and limiting role for the subsequent second package.

[0186] Step S23 , preparing a first package and a third plastic encapsulation layer 180 based on the intermediate layer 110 .

[0187] Fig.16 Shown in Fig.15 The structure diagram of the first package and the third plastic layer 180 is prepared on the structure shown. Fig.16 As shown, the first package further includes a first chip structure 120 and a first plastic encapsulation layer 140 . The first plastic encapsulation layer 140 is disposed around the interposer 110 and the first chip structure 120 , and is used to encapsulate the sidewalls of the interposer 110 and the first chip structure 120 .

[0188] In some examples of this embodiment, the material of the first molding layer 140 includes a molding material, such as one or more of epoxy resin and silicone resin.

[0189] Reference Fig.16 As shown, the third plastic sealing layer 180 is disposed around the limiting support layer 170 .

[0190] In some examples of this embodiment, the material of the third molding layer 180 includes a molding material, such as one or more of epoxy resin and silicone resin.

[0191] In some instances of this embodiment, the materials of the first plastic encapsulation layer 140 and the third plastic encapsulation layer 180 are the same, and thus, the first plastic encapsulation layer 140 and the third plastic encapsulation layer 180 can be integrally formed, that is, the first plastic encapsulation layer 140 and the third plastic encapsulation layer 180 are simultaneously prepared around the already prepared structure using the plastic encapsulation material.

[0192] In some examples of this embodiment, the third molding layer 180 may be prepared by an injection molding process or a molding underfill process.

[0193] In some examples of this embodiment, the third plastic encapsulation layer 180 is prepared before the second package, which enables the third plastic encapsulation layer 180 to have more sufficient operating space during the preparation process, reduces the operating difficulty, and also facilitates maintaining the integrity of the third plastic encapsulation layer 180, reducing or avoiding the introduction of voids in the third plastic encapsulation layer 180.

[0194] In some examples of this embodiment, the surface of the third plastic encapsulation layer 180 can be controlled to be flush with the surface of the limiting support layer 170 .

[0195] Step S24 , connecting the connecting member 150 on the second package to the connecting pad 111 .

[0196] Fig.17 Shown in Fig.16 The schematic diagram of the structure of the second package connected to the structure shown. Fig.17 As shown, the second package includes a connector 150 and a package body 160 . The connector 150 is connected to the package body 160 and protrudes from a surface of the package body 160 so as to extend into the connecting through hole 1730 .

[0197] The step of connecting the connector 150 of the second package to the connection pad 111 includes: aligning the connector 150 on the second package with the connection pad 111 on the interposer 110, and allowing the connector 150 to pass through the connection through hole 1730 and connect to the connection pad 111. In the step of allowing the connector 150 to pass through the connection through hole 1730 and connect to the connection pad 111, the package body 160 of the second package is also controlled to contact the support portion 1731 to seal the connector 150. Further, the package body 160 of the second package is close to the support portion 1731.

[0198] In some examples of this embodiment, the connector 150 may be prepared after the package body 160 is pressed down onto the support portion 1731, and during the preparation process, the connector 150 passes through the recessed portion and is connected to the connection pad 111. For example, a metal material may be sprayed toward the package body 160 by ball planting to form the connector 150 connected to the connection pad 111.

[0199] Furthermore, during the process of welding the connector 150 to the connection pad 111, the temperature rise will cause the connector 150 to melt and deform and fill the entire connection through hole 1730. At the same time, the limiter 1732 can limit the specific position of the connector 150 to avoid the problem of short circuit between adjacent connectors 150.

[0200] It can be understood that through steps S21 to S24, the package stacking structure of the present disclosure can be prepared. The package stacking structure is provided with a support portion in contact with the second package and the first package to seal the connector and the connection pad, thereby preventing air and moisture from penetrating between the first package and the second package, thereby improving the reliability of the package.

[0201] Please note that the above embodiments are for illustrative purposes only and are not meant to limit the present disclosure.

[0202] It should be understood that, unless otherwise clearly stated herein, the execution of the steps of is not strictly limited in order, and these steps may be executed in other orders. Moreover, at least a portion of the steps of may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but may be executed at different times, and the execution order of these sub-steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0203] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0204] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

Claims

1. A package stacked structure, characterized in that: include: A first package, wherein the first package includes an interposer, the interposer includes an interposer base layer and a plurality of connection pads disposed on the interposer base layer, the interposer base layer has a support area and a limiting area located between the support areas, the connection pads and an area between adjacent connection pads are located in the limiting area; A limiting support layer, wherein the limiting support layer is arranged on the intermediate layer, and the limiting support layer comprises a supporting portion arranged on the supporting area and a limiting portion arranged on the limiting area; a limiting through groove is arranged in the supporting portion, and the limiting through groove has two side notches and a groove cavity connected to the side notches, the notches are opened on the outer wall of the supporting portion, and the limiting portion is filled in the groove cavity; The second package includes a package body and a plurality of connectors connected to the package body, the connectors are connected to the corresponding connection pads, the limiting portion covers the connectors, the package body contacts the support portion, and the support portion, the limiting portion, the package body and the intermediate base layer form a closed space in which the connectors are arranged.

2. The package stacked structure according to claim 1, characterized in that: The first package further includes a first plastic encapsulation layer, the first plastic encapsulation layer and the support portion are made of a different material; and / or, The second package further includes a second plastic encapsulation layer, and the second plastic encapsulation layer and the support portion are made of a material different from each other.

3. The package stacked structure according to claim 2, characterized in that: The elastic modulus of the support portion is greater than the elastic modulus of the first plastic encapsulation layer, and the elastic modulus of the support portion is greater than the elastic modulus of the second plastic encapsulation layer; and / or, The hardness of the support portion is greater than the hardness of the first plastic encapsulation layer, and the hardness of the support portion is greater than the hardness of the second plastic encapsulation layer.

4. The package stacked structure according to claim 2, characterized in that: The limiting support layer is also arranged on the first plastic sealing layer.

5. The package stacked structure according to any one of claims 1 to 4, characterized in that: It also includes a third plastic sealing layer, the support portion and the third plastic sealing layer are made of different materials, and the contact area between the support portion and the package body is greater than the contact area between the third plastic sealing layer and the package body; and / or, The thermal conductivity of the support portion is greater than the thermal conductivity of the interposer substrate.

6. The package stacked structure according to claim 5, characterized in that: The material of the limiting portion is the same as that of the third plastic sealing layer, and the thermal expansion coefficient of the limiting portion is smaller than the thermal expansion coefficient of the supporting portion; or, The material of the limiting part is the same as that of the supporting part; The material of the support portion includes one or more of photoresist, silicon nitride, silicon oxynitride and silicon oxide.

7. The package stacked structure according to claim 1, characterized in that: The distance between the cavity wall of the groove cavity and the closest connection pad is greater than or equal to half of the spacing between adjacent connection pads.

8. A method for preparing a package stacked structure according to any one of claims 1 to 7, characterized in that: The steps include: providing the first package including the interposer; Preparing a supporting portion of the limiting supporting layer on the supporting area of ​​the intermediate layer, and preparing a limiting portion of the limiting supporting layer on the limiting area of ​​the intermediate layer; Provide the second package including the package body and the connector, connect the connector to the corresponding connection pad, and make the package body contact the support part, so that the support part, the limiting part, the package body and the intermediate base layer form a closed space in which the connector is provided.

9. The method for preparing a package stacked structure according to claim 8, characterized in that: The steps of preparing the supporting portion and the limiting portion include: Preparing a support material layer on the support area, and preparing a limiting material layer on the limiting area; Using the supporting material layer as the supporting portion; Etching the limiting material layer on the connection pad until the connection pad is exposed to form the limiting portion; Alternatively, the steps of preparing the supporting portion and preparing the limiting portion include: Preparing a support material layer covering the support area and the limiting area on the intermediary layer; Etching the support material layer to form a limiting through groove in the support material layer to expose the limiting area, wherein the limiting through groove includes two side notches and a groove cavity connected to the side notches, and the notches are opened on the outer wall of the support portion, so that the retained support material layer serves as the support portion; After the connecting member is connected to the connecting pad, a limiting material layer is filled into the groove cavity through the side notch to form the limiting portion.

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