Ion extraction gate, ion source, and manufacturing method of ion extraction gate

Abstract

This application provides an ion extraction gate, an ion source, and a method for manufacturing the ion extraction gate. The ion extraction gate has an arc-shaped cross-section and multiple holes penetrating the gate with a straight central axis. At least a portion of these holes have a central axis that is not perpendicular to the tangent to the surface of the ion extraction gate surrounding the hole, and / or the thickness of the ion extraction gate is determined based on the size of the holes and the spacing between adjacent holes. This allows ions to pass through the holes of the ion extraction gate efficiently, thereby further improving the efficiency of the ion source. Furthermore, it can simultaneously increase the ion beam extraction efficiency of the gate, thereby increasing the ion beam density, while also improving the mechanical strength of the gate and extending its service life.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to an ion extraction gate, an ion source, and a method for manufacturing the ion extraction gate. Background Technology

[0002] In recent years, ion sources have been applied in various fields such as vacuum film deposition and semiconductor etching. An ion source has a discharge chamber that generates plasma and an accelerating gate assembly that extracts and accelerates ions from the plasma. The accelerating gate assembly includes at least one set of ion extraction gates and is often equipped with a grounded gate. Ions pass through the apertures of the ion extraction gates and are accelerated by the electric field of the ion extraction gates, generating an ion beam in the space outside the discharge chamber.

[0003] For example, Patent Document 1 (CN110643954A) discloses an ion source in which the ion extraction gate (gate structure) includes a main body with a spherical structure and a balancing part located on the side of the main body; by changing the curvature of the ion extraction gate, the ion beam can be homogenized.

[0004] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating the understanding of those skilled in the art. It should not be assumed that the above technical solutions are known to those skilled in the art simply because these solutions have been described in the background section of this application. Summary of the Invention

[0005] However, the inventors discovered that the existing technology does not take into account the shape of the aperture of the ion extraction gate, preventing ions from passing through the aperture efficiently and thus hindering further efficiency improvements. Furthermore, the existing technology does not consider the thickness of the ion extraction gate, making it impossible to achieve a balance between mechanical strength and lifespan.

[0006] To address at least one of the above-mentioned problems, embodiments of this application provide an ion extraction gate, an ion source, and a method for manufacturing the ion extraction gate.

[0007] According to one aspect of the embodiments of this application, an ion extraction gate is provided, the cross-section of which is arc-shaped, and a plurality of holes are provided on the ion extraction gate, which penetrate the ion extraction gate and whose central axis is a straight line.

[0008] Wherein, the central axis of at least a portion of the plurality of apertures is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the aperture.

[0009] In some embodiments, the aperture includes a first aperture and a second aperture, wherein the central axis of the first aperture is perpendicular to the tangent of the surface of the ion extraction gate surrounding the first aperture, and the central axis of the second aperture is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the second aperture.

[0010] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0011] Alternatively, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is less than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0012] Alternatively, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the first diameter of the aperture on the upper surface of the ion extraction gate.

[0013] Alternatively, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is smaller than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0014] Alternatively, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0015] Alternatively, the first diameter of the aperture on the upper surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the first diameter of the aperture on the upper surface of the ion extraction gate.

[0016] In some embodiments, the cross-section of the hole is columnar with the upper and lower dimensions equal to the middle dimension, or the cross-section of the hole is frustum-shaped with the upper and / or lower dimensions greater than the middle dimension.

[0017] In some embodiments, the ion extraction gate has a raised spherical surface, and when viewed from the front of the sphere, the first aperture and the second aperture are distributed around the center of the sphere, with the second aperture distributed radially outward of at least a portion of the first aperture.

[0018] In some embodiments, the spacing between a pair of adjacent holes is equal to the spacing between another pair of adjacent holes, and the plurality of holes are uniformly distributed on the spherical surface.

[0019] In some embodiments, the spacing between at least one pair of adjacent holes is not equal to the spacing between another pair of adjacent holes, and the plurality of holes are non-uniformly distributed on the spherical surface.

[0020] In some embodiments, the spacing between adjacent holes decreases as the distance from the center of the sphere increases; the density of holes on the sphere farther from the center is greater than the density of holes on the sphere closer to the center.

[0021] In some embodiments, the thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures, wherein the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is within a predetermined range.

[0022] In some embodiments, the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate satisfies the following formula:

[0023] W ij =P j –(d i +d i+1 )*1 / 2;

[0024] L ij =W ij / T;

[0025] 0.1≤L≤20;

[0026] Where, di Where P is the diameter of the hole, i = 1, 2, ... n; j W is the average interval between the centers of adjacent holes. ij The interval between adjacent apertures is j = 1, 2, ..., n; n is the number of apertures; T is the thickness of the ion extraction gate; and L is the ratio.

[0027] According to another aspect of the embodiments of this application, an ion extraction gate is provided, the cross-section of which is arc-shaped, and a plurality of holes are provided on the ion extraction gate, which penetrate the ion extraction gate and whose central axis is a straight line.

[0028] The thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures, and the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is within a predetermined range.

[0029] In some embodiments, the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate satisfies the following formula:

[0030] W ij =P j –(d i +d i+1 )*1 / 2;

[0031] L ij =W ij / T;

[0032] 0.1≤L≤20;

[0033] Where, d i Where P is the diameter of the hole, i = 1, 2, ... n; j W is the average interval between the centers of adjacent holes. ij The interval between adjacent apertures is j = 1, 2, ..., n; n is the number of apertures; T is the thickness of the ion extraction gate; and L is the ratio.

[0034] In some embodiments, the plurality of apertures includes a first aperture and a second aperture, wherein the central axis of the first aperture is perpendicular to the tangent of the surface of the ion extraction gate surrounding the first aperture, and the central axis of the second aperture is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the second aperture.

[0035] According to another aspect of the embodiments of this application, an ion source is provided, which has a housing, the ion source further comprising:

[0036] A discharge chamber is disposed inside the housing; an ion extraction gate is disposed on the discharge chamber, which is capable of extracting ions and forming an ion beam. The cross-section of the ion extraction gate is arc-shaped, and multiple holes are disposed on the ion extraction gate that penetrate the ion extraction gate and have a straight central axis.

[0037] A radio frequency antenna disposed inside the housing; and

[0038] A gas guiding structure for introducing gas from outside the housing into the discharge chamber;

[0039] Wherein, the central axis of at least a portion of the plurality of apertures is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the aperture.

[0040] In some embodiments, the aperture includes a first aperture and a second aperture, wherein the central axis of the first aperture is perpendicular to the tangent of the surface of the ion extraction gate surrounding the first aperture, and the central axis of the second aperture is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the second aperture.

[0041] In some embodiments, the ion source includes an accelerating gate group consisting of at least two of the ion extraction gates, wherein a plurality of apertures in different ion extraction gates that coincide in the ion extraction direction have the same shape and / or different shapes.

[0042] In some embodiments, the same shape is a columnar shape in which the size of the upper and / or lower part of the hole is equal to the size of the middle part, or the same shape is a platform shape in which the size of the upper and / or lower part of the hole is greater than the size of the middle part.

[0043] According to another aspect of the embodiments of this application, an ion source is provided, which has a housing, the ion source further comprising:

[0044] A discharge chamber is disposed inside the housing; an ion extraction gate is provided on the discharge chamber, which is capable of extracting ions and forming an ion beam. The cross-section of the ion extraction gate is arc-shaped, and multiple holes are provided on the ion extraction gate that penetrate the ion extraction gate and have a straight central axis.

[0045] A radio frequency antenna disposed inside the housing; and

[0046] A gas guiding structure for introducing gas from outside the housing into the discharge chamber;

[0047] The thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures, and the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is within a predetermined range.

[0048] According to another aspect of the embodiments of this application, a method for manufacturing an ion extraction gate is provided, comprising:

[0049] Forming an ion extraction gate with an arc-shaped cross-section; and

[0050] Multiple holes are provided on the ion extraction gate, which penetrate the ion extraction gate and have a straight central axis.

[0051] Wherein, the central axis of at least a portion of the plurality of apertures is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the aperture.

[0052] According to another aspect of the embodiments of this application, a method for manufacturing an ion extraction gate is provided, comprising:

[0053] Forming an ion extraction gate with an arc-shaped cross-section; and

[0054] Multiple holes are provided on the ion extraction gate, which penetrate the ion extraction gate and have a straight central axis.

[0055] The thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures, and the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is within a predetermined range.

[0056] One of the beneficial effects of this application's embodiments is that a plurality of holes are provided on the ion extraction gate, and the central axis of at least a portion of the holes is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the holes. Therefore, considering the influence of the hole shape on ion movement, ions can efficiently pass through the holes of the ion extraction gate, thereby further improving the efficiency of the ion source.

[0057] Furthermore, the thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures, with the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate falling within a predetermined range. This allows for the simultaneous improvement of the ion beam extraction efficiency of the gate, thereby increasing the ion beam density, while also enhancing the mechanical strength and extending the lifespan of the gate, resulting in a high-efficiency, high-stability, and long-life ion extraction gate.

[0058] Specific embodiments of this application are disclosed in detail with reference to the following description and accompanying drawings, indicating how the principles of this application can be adopted. It should be understood that the embodiments of this application are not limited in scope. Within the spirit and scope of the appended claims, embodiments of this application include many changes, modifications, and equivalents.

[0059] Features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0060] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, whole, step, or component, but does not exclude the presence or addition of one or more other features, wholes, steps, or components. Attached Figure Description

[0061] The elements and features described in one drawing or embodiment of this application may be combined with elements and features shown in one or more other drawings or embodiments. Furthermore, in the drawings, similar reference numerals denote corresponding parts in several drawings and can be used to indicate corresponding parts used in more than one embodiment.

[0062] Figure 1 This is a schematic diagram of an ion source according to an embodiment of this application;

[0063] Figure 2 This is another schematic diagram of the ion source according to an embodiment of this application;

[0064] Figure 3 This is a cross-sectional schematic diagram of an ion source according to an embodiment of this application;

[0065] Figure 4 This is a partially enlarged schematic diagram of the cross-section of the ion extraction gate according to an embodiment of this application;

[0066] Figure 5 This is another partially enlarged schematic diagram of the cross-section of the ion extraction gate according to an embodiment of this application;

[0067] Figure 6 This is another partially enlarged schematic diagram of the cross-section of the ion extraction gate according to an embodiment of this application;

[0068] Figure 7 This is an enlarged schematic diagram of the hole portion according to an embodiment of this application;

[0069] Figure 8 This is another enlarged schematic diagram of the hole portion in an embodiment of this application;

[0070] Figure 9 This is a partial schematic diagram of two layers of electrodes according to an embodiment of this application;

[0071] Figure 10 This is another schematic diagram of the ion extraction gate according to an embodiment of this application;

[0072] Figure 11 This is another schematic diagram of the ion extraction gate according to an embodiment of this application;

[0073] Figure 12 This is another schematic diagram of the ion extraction gate according to an embodiment of this application;

[0074] Figure 13 This is a schematic diagram of a method for manufacturing an ion extraction gate according to an embodiment of this application. Detailed Implementation

[0075] Referring to the accompanying drawings, the foregoing and other features of this application will become apparent from the following description. Specific embodiments of this application are specifically disclosed in the description and drawings, illustrating partial implementations in which the principles of this application may be adopted. It should be understood that this application is not limited to the described embodiments; rather, it includes all modifications, variations, and equivalents falling within the scope of the appended claims.

[0076] In the embodiments of this application, the terms "first," "second," etc., are used to distinguish different elements by name, but do not indicate the spatial arrangement or chronological order of these elements, and these elements should not be limited by these terms. The term "and / or" includes any one or more of the terms listed in association and all combinations thereof. The terms "comprising," "including," "having," etc., refer to the presence of the stated features, elements, components, or assemblies, but do not exclude the presence or addition of one or more other features, elements, components, or assemblies.

[0077] In the embodiments of this application, the singular forms "a," "the," etc., including the plural forms, should be broadly understood as "a kind" or "a class" rather than limited to the meaning of "an." Furthermore, the term "the" should be understood to include both the singular and plural forms, unless the context explicitly indicates otherwise. Additionally, the term "according to" should be understood as "at least partially based on…," and the term "based on" should be understood as "at least partially based on…," unless the context explicitly indicates otherwise.

[0078] Furthermore, in the following description of this application, for ease of explanation, the direction extending along or parallel to the central axis OO' of the ion source will be referred to as the "axial direction," the radial direction centered on the axial direction will be referred to as the "radial direction," and the direction around the axial direction will be referred to as the "circumferential direction." One side of the axial direction OO will be referred to as the upper or upper side, and one side of the axial direction OO' will be referred to as the lower or lower side. However, it is important to note that these are merely for ease of explanation and do not limit the orientation of the ion source and ion extraction gate during manufacturing and use.

[0079] The embodiments of this application will now be described with reference to the accompanying drawings.

[0080] Figure 1 This is a schematic diagram of an ion source according to an embodiment of this application, showing some components of the ion source 100 viewed from an obliquely upward angle; Figure 2This is another schematic diagram of an ion source according to an embodiment of this application, showing some components of the ion source 100 viewed from the side.

[0081] like Figure 1 and Figure 2 As shown, the ion source 100 has a housing 101, and a discharge chamber 102 (see [reference]). Figure 3 The device is equipped with an ion extraction grid 103 capable of extracting ions and forming an ion beam. For example... Figure 1 and Figure 2 As shown, the ion extraction gate 103 has a raised spherical surface.

[0082] Figure 3 This is a cross-sectional schematic diagram of an ion source according to an embodiment of this application, showing some components of the ion source after being cut along the central axis OO'. Figure 3 As shown, the ion source 100 has a housing 101, and the ion source 100 further includes:

[0083] A discharge chamber 102 is disposed inside the housing 101; an ion extraction gate 103 is disposed on the discharge chamber 102, which is capable of extracting ions and forming an ion beam. The cross-section of the ion extraction gate 103 is arc-shaped, and multiple holes 104 are disposed on the ion extraction gate 103, which penetrate the ion extraction gate 103 and whose central axis is a straight line. Figure 3 For simplicity, only a portion of the holes are marked.

[0084] The radio frequency antenna 105 is disposed inside the housing 101; and

[0085] A gas guiding structure for introducing gas from outside the housing 101 into the discharge chamber 102. Figure 3 For simplicity, only the gas inlet 106 is shown.

[0086] It is worth noting that the above Figures 1 to 3 The ion source described in this application is merely illustrative and is not limited thereto. For example, the connection relationships between various modules or components can be appropriately adjusted; additional modules or components can be added, or some modules or components can be removed; the shape of one or more components can be changed, etc. Those skilled in the art can make appropriate modifications based on the above description, and are not limited to the above-described embodiments. Figures 1 to 3 The records.

[0087] For example, such as Figure 3 As shown, the ion extraction gate 103 includes: a ground gate 1031 and an accelerating gate group 1032; the ground gate 1031 and the accelerating gate group 1032 are stacked. Figure 3As shown, the accelerating gate group 1032 may include two gates, also referred to as accelerating gate units; for details regarding the ground gate and accelerating gate group, please refer to relevant technologies, which are omitted here.

[0088] In this embodiment of the application, the central axis of at least a portion of the plurality of holes 104 is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the hole.

[0089] Figure 4 This is a partially enlarged schematic diagram of the cross-section of the ion extraction gate according to an embodiment of this application, as shown below. Figure 4 As shown, in some embodiments, the aperture 104 includes a first aperture 1041 (which may be referred to as a vertical aperture) and a second aperture 1042 (which may be referred to as a non-vertical aperture). The central axis A1 of the first aperture 1041 is perpendicular to the tangent B1 of the surface 103a of the ion extraction gate 103 surrounding the first aperture 1041, and the central axis A2 of the second aperture 1042 is not perpendicular to the tangent B2 of the surface 103a of the ion extraction gate 103 surrounding the second aperture 1042.

[0090] For example, the angle between A1 and B1 is a right angle (90°), and the angle between A2 and B2 is θ, where θ < 90°.

[0091] It is worth noting that, Figure 4 The illustration uses four first holes 1041 and one second hole 1042 as an example, but this application is not limited thereto. In specific implementations, the appropriate number and specific positions can be set according to actual needs.

[0092] Figure 5 This is another partially enlarged schematic diagram of the cross-section of the ion extraction gate in an embodiment of this application, as shown below. Figure 5 As shown, in some embodiments, the aperture 104 includes a first aperture 1041 and a second aperture 1042. The central axis of the first aperture 1041 is perpendicular to the tangent of the surface of the ion extraction gate 103 surrounding the first aperture 1041, and the central axis of the second aperture 1042 is not perpendicular to the tangent of the surface of the ion extraction gate 103 surrounding the second aperture 1042.

[0093] For example, such as Figure 5 As shown in the upper part, the angle between the central axis of the first hole 1041 (vertical hole) and the tangent to the gate surface is 90°, and the angle between the central axis of the second hole 1042 (non-vertical hole) and the tangent to the gate surface is less than 90°.

[0094] For example, such as Figure 5As shown in the lower half, the angle between the central axis of the first hole 1041 (vertical hole) and the tangent to the gate surface is 90°, and the angle between the central axis of the second hole 1042 (non-vertical hole) and the tangent to the gate surface is greater than 90°.

[0095] Figure 6 This is another partially enlarged schematic diagram of the cross-section of the ion extraction gate in an embodiment of this application, as shown below. Figure 6 As shown, in some embodiments, for example, the aperture 104 includes only the second aperture 1042, and the central axis of the second aperture 1042 is not perpendicular to the tangent of the surface of the ion extraction gate 103 surrounding the second aperture 1042.

[0096] For example, such as Figure 6 As shown in the upper part, the angle between the central axis of a portion of the second hole portion 1042 (non-vertical hole) and the tangent to the gate surface is less than 90°, while the angle between the central axis of another portion of the second hole portion 1042 (non-vertical hole) and the tangent to the gate surface is greater than 90°.

[0097] For example, such as Figure 6 As shown in the middle part, the angle between the central axis of the second hole 1042 (non-vertical hole) and the tangent of the gate surface is less than 90°.

[0098] For example, such as Figure 6 As shown in the lower half, the angle between the central axis of the second hole 1042 (non-vertical hole) and the tangent to the gate surface is greater than 90°.

[0099] Therefore, by setting a first hole and a second hole that directly penetrate (with a straight central axis) through the ion extraction gate, and by having different cross-sectional shapes for the first hole and the second hole, the influence of the hole shape on ion movement can be taken into account. Ions can efficiently pass through the holes of the ion extraction gate, thereby further improving the efficiency of the ion source.

[0100] The above is only a schematic illustration of the shape of the aperture. In an ion extraction gate, both a first aperture and a second aperture can be provided, or only the second aperture can be provided. Furthermore, the included angle of the second aperture can be less than 90° or greater than 90°. Multiple second apertures in the same ion extraction gate can have different angles, and this application does not impose any limitation on this. In the following description, the distinction between the first aperture and the second aperture will not be made unless it causes confusion; that is, in the following description, "aperture" can refer to either the first aperture or the second aperture.

[0101] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and / or, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate. That is, the cross-section of the aperture is trapezoidal, with the upper and / or lower portion having a larger dimension than the middle portion.

[0102] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0103] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is less than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0104] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the first diameter of the aperture on the upper surface of the ion extraction gate.

[0105] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is smaller than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0106] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is greater than the first diameter of the aperture on the upper surface of the ion extraction gate.

[0107] In some embodiments, the first diameter of the aperture on the upper surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the second diameter of the aperture inside the ion extraction gate, and the third diameter of the aperture on the lower surface of the ion extraction gate is equal to the first diameter of the aperture on the upper surface of the ion extraction gate.

[0108] Figure 7 This is an enlarged schematic diagram of the holes in an embodiment of this application, showing the situation of multiple holes.

[0109] like Figure 7 As shown in the left portion, in some embodiments, for example, the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; and the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is equal to the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103. That is, the cross-section of the aperture 104 is trapezoidal, with both the upper and lower dimensions being larger than the middle dimension.

[0110] like Figure 7 As shown in the middle portion, in some embodiments, for example, the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is equal to the second diameter D2 of the aperture 104 inside the ion extraction gate 103. That is, the cross-section of the aperture 104 is trapezoidal, with the upper dimension being larger than the middle dimension.

[0111] like Figure 7 As shown in the right-hand portion, in some embodiments, for example, the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103 is equal to the second diameter D2 of the aperture 104 inside the ion extraction gate 103; the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is greater than the second diameter D2 of the aperture 104 inside the ion extraction gate 103. That is, the cross-section of the aperture 104 is trapezoidal, with the lower portion having a larger dimension than the middle portion.

[0112] Figure 8 This is another enlarged schematic diagram of the hole portion in an embodiment of this application, showing the case of multiple hole portions.

[0113] like Figure 8As shown in the upper part, in some embodiments, for example, the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; and the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is smaller than the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103. That is, the cross-section of the aperture 104 is trapezoidal, with both the upper and lower dimensions being larger than the middle dimension.

[0114] like Figure 8 As shown in the middle portion, in some embodiments, for example, the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is larger than the second diameter D2 of the aperture 104 inside the ion extraction gate 103; and the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is larger than the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103. That is, the cross-section of the aperture 104 is trapezoidal, with both the upper and lower dimensions being larger than the middle portion.

[0115] Therefore, by setting the cross-section of the aperture to a platform shape, the influence of the aperture shape on ion movement can be further taken into account, and ions can pass through the aperture of the ion extraction gate more efficiently, thereby further improving the efficiency of the ion source.

[0116] like Figure 8 As shown in the right half, in some embodiments, for example, the first diameter D1 of the aperture 104 on the upper surface of the ion extraction gate 103 is equal to the second diameter D2 of the aperture 104 inside the ion extraction gate 103; the third diameter D3 of the aperture 104 on the lower surface of the ion extraction gate 103 is equal to the second diameter D2 of the aperture 104 inside the ion extraction gate 103. That is, the cross-section of the aperture 104 is columnar, with the dimensions of the upper and lower portions both equal to the dimensions of the middle portion.

[0117] In some embodiments, the ion source includes an accelerating gate group consisting of at least two ion extraction gates, wherein multiple apertures in different ion extraction gates that coincide in the ion extraction direction have the same shape and / or different shapes.

[0118] In some embodiments, the same shape is a columnar shape in which the dimensions of the upper and lower parts of the hole are equal to the dimensions of the middle part, or the same shape is a platform shape in which the dimensions of the upper and / or lower parts of the hole are greater than the dimensions of the middle part.

[0119] Figure 9 This is a partial schematic diagram of the two-layer electrode according to an embodiment of this application, as shown below. Figure 9 As shown, an aperture (first aperture or second aperture) 5011 is provided on the ion extraction gate 501, and an aperture (first aperture or second aperture) 5021 is provided on the ion extraction gate 502. The aperture 5011 and the aperture 5021 coincide in the ion extraction direction, so the aperture 5011 and the aperture 5021 have the same shape, for example, the cross-sectional shape of both is frustum-shaped.

[0120] Therefore, by setting at least two overlapping apertures on different gates to have the same shape, the influence of aperture shape on ion movement can be further taken into account, and ions can pass through the apertures of the ion extraction gate more efficiently, thereby further improving the efficiency of the ion source. However, this application is not limited to this; for example, in some embodiments, the shapes of aperture 5011 and aperture 5021 may also be different.

[0121] Figure 9 The example is illustrated using two holes. When there are three or more overlapping holes, the overlapping holes may all have the same shape, or they may each have a different shape, or some of the holes may have the same shape while the others have different shapes.

[0122] The shapes of the first and second holes have been schematically illustrated above, but this application is not limited to these and other shapes are also possible. Figures 7 to 9 For simplicity, the effect of the surface curvature of the ion extraction gate on the cross-sectional shape of the first and second holes is not shown. Those skilled in the art can make adaptive adjustments to the shape of the holes based on the above description, which will not be elaborated here.

[0123] The distribution of holes in the embodiments of this application will be illustrated below.

[0124] In some embodiments, viewed from the front of the sphere (i.e. Figure 2 (Viewed from the O side to the O' side), the first hole and the second hole are distributed around the center of the sphere, and the second hole is distributed on the radially outer side of at least a portion of the first hole.

[0125] In some implementations, the spacing between a pair of adjacent holes is equal to the spacing between another pair of adjacent holes, and the multiple holes are evenly distributed on the spherical surface.

[0126] Figure 10 This is another schematic diagram of an ion extraction gate according to an embodiment of this application, showing the ion extraction gate 103 viewed from above and below. Figure 10As shown, the first hole portion 1041 and the second hole portion 1042 are distributed around the center 801 of the spherical surface, and the second hole portion 1042 is distributed radially outside at least a part of the first hole portion 1041.

[0127] Thus, the non-vertical second hole portion is distributed radially outside at least a part of the vertical first hole portion, and ions can pass through the hole portion of the ion extraction grid more efficiently, thereby further improving the efficiency of the ion source.

[0128] As Figure 10 shown, for example, the interval H1 between a pair of adjacent hole portions is equal to the interval H2 between another pair of adjacent hole portions, and the plurality of hole portions 104 are evenly distributed on the spherical surface. Figure 10 The case where the intervals between adjacent hole portions are equal is shown, but the present application is not limited thereto, and it may also be that the intervals between any adjacent hole portions are equal.

[0129] In some embodiments, the interval between at least one pair of adjacent hole portions is not equal to the interval between another pair of adjacent hole portions, and the plurality of hole portions are non-uniformly distributed on the spherical surface.

[0130] Figure 11 is another schematic diagram of the ion extraction grid according to an embodiment of the present application, showing the case of observing the ion extraction grid 103 from top to bottom. As Figure 11 shown, the first hole portion 1041 and the second hole portion 1042 are distributed around the center 901 of the spherical surface, and the second hole portion 1042 is distributed radially outside at least a part of the first hole portion 1041.

[0131] Thus, the non-vertical second hole portion is distributed radially outside at least a part of the vertical first hole portion, and ions can pass through the hole portion of the ion extraction grid more efficiently, thereby further improving the efficiency of the ion source.

[0132] As Figure 11 shown, for example, the interval between at least one pair of adjacent hole portions is not equal to the interval between another pair of adjacent hole portions, and the plurality of hole portions 104 are non-uniformly distributed on the spherical surface. For example, the interval H3 between a pair of adjacent hole portions is not equal to the interval H4 between another pair of adjacent hole portions.

[0133] As Figure 11 shown, as the distance from the center 901 of the spherical surface increases, the interval between adjacent hole portions decreases, and the density of the hole portions on the spherical surface far from the center 901 is greater than the density of the hole portions on the spherical surface close to the center 901. For example, H3 < H4, and the density of the hole portions on the radial outside is greater than the density of the hole portions on the radial inside.

[0134] Thus, the density of the hole portions is non-uniformly distributed, and on the basis that ions can pass through the hole portion of the ion extraction grid efficiently, the ion beam can be further homogenized.

[0135] The shape of the hole has been schematically illustrated above, but this application is not limited thereto; for example... Figure 10 and Figure 11 The holes in the structure can be symmetrically or asymmetrically distributed. Furthermore... Figure 10 and Figure 11 Only the case where the second hole is located radially outside a portion of the first hole is shown; the second hole may also be located radially outside the entire first hole.

[0136] The thickness of the ion extraction gate will be explained below.

[0137] Figure 12 This is another schematic diagram of an ion extraction gate according to an embodiment of this application, showing a partial cross-section of the ion extraction gate. For example... Figure 12 The above, d i Let P be the diameter of the hole, i = 1, 2, ..., n; j W is the average interval between the centers of adjacent holes. ij The interval between adjacent apertures is j = 1, 2, ..., n; n is the number of apertures; T is the thickness of the ion extraction gate.

[0138] For example, W ij =P j –(d i +d i+1 )*1 / 2;

[0139] The ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is:

[0140] L ij =W ij / T.

[0141] exist Figure 12 For simplicity, the effect of the surface curvature of the ion extraction gate on the cross-sectional shape of the aperture is not shown. Those skilled in the art can adaptively adjust the aperture shape based on the above description. Furthermore, Figure 12 The first hole is used as an example for illustration, but this application is not limited to this; the second hole is also applicable.

[0142] The inventors discovered that the thickness T, aperture diameter d, and aperture density of the ion extraction gate have a significant impact on the density and distribution uniformity of the extracted ion beam, as well as the gate's lifespan and the difficulty of machining.

[0143] When L is large, one scenario is that the diameter d of the aperture is small and / or the aperture density is reduced, resulting in a larger spacing P between adjacent apertures and high mechanical strength. However, the ion beam density decreases, and the larger remaining portion W between apertures leads to an increase in gate temperature, deterioration of temperature distribution, and increased thermal deformation, reducing the stability of the ion beam distribution and shortening the gate's lifespan. Another scenario is that the thickness T of the ion extraction gate is thin, which is beneficial for improving ion extraction efficiency; however, it increases the processing difficulty and reduces the mechanical strength of the gate, making it more prone to breakage.

[0144] When L is small, one scenario is that the diameter d of the aperture is larger and / or the aperture density increases, thus enhancing the ion beam density. However, the spacing P between adjacent apertures is narrower, resulting in lower mechanical strength and increased machining difficulty. Furthermore, the mechanical wear during gate maintenance has a more significant impact on the narrow W, thereby shortening the gate's lifespan. Another scenario is that the thickness T of the ion extraction gate is thicker, enhancing the gate's mechanical strength and making it less prone to breakage. However, an excessively thick gate leads to a decrease in ion beam extraction efficiency and density, increased ion bombardment, higher gate temperature, deteriorated thermal conductivity, and exacerbated thermal deformation due to thermal stress, resulting in a decrease in ion beam density and ion beam distribution stability.

[0145] Table 1 illustrates the influence of the relationship between L, T, and W on mechanical strength and lifespan, among other things.

[0146] Table 1

[0147]

[0148]

[0149] In some embodiments of this application, the thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures. This allows for the simultaneous improvement of the gate's ion beam extraction efficiency and thus the ion beam density, while also enhancing the gate's mechanical strength and extending its lifespan, resulting in a high-efficiency, high-stability, and long-life ion extraction gate.

[0150] In some embodiments, the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is within a predetermined range. For example, 0.1 ≤ L ≤ 20; where L is the ratio. Another example is 0.3 mm ≤ T ≤ 2.5 mm; where T is the thickness of the ion extraction gate.

[0151] For example, the values ​​of L, W, and T can be shown in Table 2 below:

[0152] Table 2

[0153] L W(mm) T(mm) 20 6 0.3 20 10 0.5 20 20 1 20 30 1.5 20 40 2 20 50 2.5

[0154] For example, the values ​​of L, W, and T can be shown in Table 3 below:

[0155] Table 3

[0156] L W(mm) T(mm) 10 3 0.3 10 5 0.5 10 10 1 10 15 1.5 10 20 2 10 25 2.5

[0157] For example, the values ​​of L, W, and T can be shown in Table 4 below:

[0158] Table 4

[0159] L W(mm) T(mm) 5 1.5 0.3 5 2.5 0.5 5 5 1 5 7.5 1.5 5 10 2 5 12.5 2.5

[0160] For example, the values ​​of L, W, and T can be shown in Table 5 below:

[0161] Table 5

[0162] L W(mm) T(mm) 1 0.3 0.3 1 0.5 0.5 1 1 1 1 1.5 1.5 1 2 2 1 2.5 2.5

[0163] For example, the values ​​of L, W, and T can be shown in Table 6 below:

[0164] Table 6

[0165] L W(mm) T(mm) 0.6 0.3 0.5 0.6 0.6 1 0.6 0.9 1.5 0.6 1.2 2 0.6 1.5 2.5

[0166] For example, the values ​​of L, W, and T can be shown in Table 7 below:

[0167] Table 7

[0168] L W(mm) T(mm) 0.1 0.25 2.5

[0169] Therefore, compared with the prior art which does not consider electrode thickness, the embodiments of this application can further improve the mechanical strength and service life of the ion extraction gate; while increasing the ion beam extraction efficiency of the gate and thus increasing the ion beam density, the mechanical strength of the gate and the service life can be improved at the same time, thereby obtaining a high-efficiency, high-stability and long-life ion extraction gate.

[0170] The above are just some specific examples of this application, but this application is not limited thereto.

[0171] The above embodiments are merely illustrative examples of embodiments of this application, but this application is not limited thereto, and appropriate modifications can be made based on the above embodiments. For example, the above embodiments can be used alone, or one or more of the above embodiments can be combined.

[0172] The above provides a schematic illustration of the ion extraction gate and ion source. The manufacturing method of the ion extraction gate will be described below.

[0173] Figure 13 This is a schematic diagram of a method for manufacturing an ion extraction gate according to an embodiment of this application, as shown below. Figure 13 As shown, the method includes:

[0174] 1301, forming an ion extraction gate with an arc-shaped cross-section; and

[0175] 1302, multiple holes are provided on the ion extraction gate, which penetrate the ion extraction gate and whose central axis is a straight line.

[0176] In some embodiments, the central axis of at least a portion of the plurality of apertures is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the aperture.

[0177] In some embodiments, the aperture includes a first aperture and a second aperture, wherein the central axis of the first aperture is perpendicular to the tangent of the surface of the ion extraction gate surrounding the first aperture, and the central axis of the second aperture is not perpendicular to the tangent of the surface of the ion extraction gate surrounding the second aperture.

[0178] In some embodiments, the thickness of the ion extraction gate is determined based on the size of the aperture and the spacing between adjacent apertures, wherein the ratio between the spacing between adjacent apertures and the thickness of the ion extraction gate is within a predetermined range.

[0179] It is worth noting that the above appendix Figure 13 The embodiments described herein are merely illustrative and are not limited thereto. For example, the execution order of various operations can be appropriately adjusted, and additional operations can be added or some operations can be removed. Those skilled in the art can make appropriate modifications based on the above description, and are not limited to the above-described embodiments. Figure 13 The records.

[0180] The above embodiments are merely illustrative examples of embodiments of this application, but this application is not limited thereto, and appropriate modifications can be made based on the above embodiments. For example, the above embodiments can be used alone, or one or more of the above embodiments can be combined.

[0181] The apparatus and methods described above in the embodiments of this application can be implemented in hardware or in combination with software. This application relates to a computer-readable program that, when executed by a logic component, enables the logic component to implement the apparatus or constituent parts described above, or to implement the various methods or steps described above. This application also relates to storage media for storing the above programs, such as hard disks, magnetic disks, optical disks, DVDs, flash memory, etc.

[0182] The methods / apparatus described in conjunction with the embodiments of this application can be directly embodied in hardware, software modules executed by a processor, or a combination of both. For example, one or more and / or combinations of one or more functional block diagrams shown in the figures can correspond to various software modules in a computer program flow, or to various hardware modules. These software modules can correspond to the various steps shown in the figures, respectively. These hardware modules can be implemented, for example, using a field-programmable gate array (FPGA) to embed these software modules.

[0183] The present application has been described above with reference to specific embodiments. However, those skilled in the art should understand that these descriptions are exemplary and not intended to limit the scope of protection of the present application. Those skilled in the art can make various modifications and variations to the present application based on its spirit and principles, and these modifications and variations are also within the scope of the present application.

Claims

1. An ion extraction grid having an arc-shaped cross section, a plurality of hole portions being provided on the ion extraction grid, the plurality of hole portions having straight central axes that pass through the ion extraction grid, characterized in that at least some of the plurality of hole portions have central axes that are not perpendicular to tangents of surfaces of the ion extraction grid around the hole portions.

2. The ion extraction grid of claim 1, wherein, the plurality of hole portions include first hole portions and second hole portions, the first hole portions having central axes that are perpendicular to tangents of surfaces of the ion extraction grid around the first hole portions, the second hole portions having central axes that are not perpendicular to tangents of surfaces of the ion extraction grid around the second hole portions.

3. The ion extraction grid of claim 1, wherein, the hole portions have a first diameter at an upper surface of the ion extraction grid that is equal to a second diameter of the hole portions inside the ion extraction grid, the hole portions have a third diameter at a lower surface of the ion extraction grid that is greater than the second diameter of the hole portions inside the ion extraction grid, the third diameter of the hole portions at the lower surface of the ion extraction grid is greater than the first diameter of the hole portions at the upper surface of the ion extraction grid; alternatively, the hole portions have a first diameter at an upper surface of the ion extraction grid that is greater than a second diameter of the hole portions inside the ion extraction grid, the hole portions have a third diameter at a lower surface of the ion extraction grid that is equal to the second diameter of the hole portions inside the ion extraction grid, the third diameter of the hole portions at the lower surface of the ion extraction grid is less than the first diameter of the hole portions at the upper surface of the ion extraction grid; alternatively, the hole portions have a first diameter at an upper surface of the ion extraction grid that is greater than a second diameter of the hole portions inside the ion extraction grid, the hole portions have a third diameter at a lower surface of the ion extraction grid that is greater than the second diameter of the hole portions inside the ion extraction grid, the third diameter of the hole portions at the lower surface of the ion extraction grid is equal to the first diameter of the hole portions at the upper surface of the ion extraction grid; alternatively, the hole portions have a first diameter at an upper surface of the ion extraction grid that is greater than a second diameter of the hole portions inside the ion extraction grid, the hole portions have a third diameter at a lower surface of the ion extraction grid that is greater than the second diameter of the hole portions inside the ion extraction grid, the third diameter of the hole portions at the lower surface of the ion extraction grid is less than the first diameter of the hole portions at the upper surface of the ion extraction grid; alternatively, the hole portions have a first diameter at an upper surface of the ion extraction grid that is greater than a second diameter of the hole portions inside the ion extraction grid, the hole portions have a third diameter at a lower surface of the ion extraction grid that is greater than the second diameter of the hole portions inside the ion extraction grid, the third diameter of the hole portions at the lower surface of the ion extraction grid is greater than the first diameter of the hole portions at the upper surface of the ion extraction grid; Alternatively, a first diameter of the hole portion at an upper surface of the ion extraction electrode is equal to a second diameter of the hole portion inside the ion extraction electrode, a third diameter of the hole portion at a lower surface of the ion extraction electrode is equal to the second diameter of the hole portion inside the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is equal to the first diameter of the hole portion at the upper surface of the ion extraction electrode.

4. The ion extraction grid of claim 1, wherein, A cross section of the hole portion is columnar in which sizes of upper and lower portions are equal to a size of an intermediate portion, or the cross section of the hole portion is table-shaped in which sizes of the upper and / or lower portions are greater than the size of the intermediate portion.

5. The ion extraction grid of claim 2, wherein, The ion extraction electrode has a convex spherical surface, and the first hole portions and the second hole portions are distributed around a center of the spherical surface as viewed from a front surface of the spherical surface, and the second hole portions are distributed outside a radial direction of at least a part of the first hole portions.

6. The ion extraction grid of claim 5, wherein, Intervals of a pair of adjacent hole portions are equal to intervals of another pair of adjacent hole portions, and the plurality of hole portions are uniformly distributed on the spherical surface.

7. The ion extraction grid of claim 5, wherein, Intervals of at least a pair of adjacent hole portions are not equal to intervals of another pair of adjacent hole portions, and the plurality of hole portions are non-uniformly distributed on the spherical surface.

8. The ion extraction grid of claim 7, wherein, As a distance from a center of the spherical surface increases, the intervals of the adjacent hole portions decrease, and a density of the hole portions on the spherical surface away from the center is greater than a density of the hole portions on the spherical surface close to the center.

9. The ion extraction grid of any of claims 1 to 8, wherein, A thickness of the ion extraction electrode is determined according to sizes of the hole portions and intervals between adjacent hole portions, and a ratio between the intervals between the adjacent hole portions and the thickness of the ion extraction electrode is within a predetermined range.

10. The ion extraction grid of claim 9, wherein, The ratio between the intervals between the adjacent hole portions and the thickness of the ion extraction electrode satisfies the following equation: W ij = P j – (d i + d i+1 )*1 / 2; L ij = W ij / T; 0.1≤L≤20； where d i is the diameter of the hole, i = 1, 2,... n; P j is the average spacing between the centers of adjacent holes, W ij is the spacing between the adjacent holes, j = 1, 2,... n; n is the number of holes; T is the thickness of the ion extraction grid; and L is the ratio.

11. An ion extraction electrode having a cross section in an arc shape, a plurality of hole portions being provided on the ion extraction electrode and penetrating the ion extraction electrode and having straight center axes, characterized in that A thickness of the ion extraction electrode is determined according to sizes of the hole portions and intervals between adjacent hole portions, and a ratio between the intervals between the adjacent hole portions and the thickness of the ion extraction electrode is L, and 0.1 ≤ L ≤ 20.

12. The ion extraction grid of claim 11, wherein, The ratio between the intervals between the adjacent hole portions and the thickness of the ion extraction electrode satisfies the following equation: W ij = P j - (d i + d i+1 )*1 / 2; L ij = W ij / T; 0.1≤L≤20； where d i is the diameter of the hole, i = 1, 2,... n; P j is the average spacing between the centers of adjacent holes, W ij is the spacing between the adjacent holes, j = 1, 2,... n; n is the number of holes; T is the thickness of the ion extraction grid; and L is the ratio.

13. The ion extraction grid of claim 11 or 12, wherein, Center axes of at least a part of the plurality of hole portions are not perpendicular to tangents of surfaces of the ion extraction electrode around the hole portions.

14. The ion extraction grid of claim 13, wherein, The plurality of hole portions include first hole portions and second hole portions, the center axes of the first hole portions are perpendicular to the tangents of the surfaces of the ion extraction electrode around the first hole portions, and the center axes of the second hole portions are not perpendicular to the tangents of the surfaces of the ion extraction electrode around the second hole portions.

15. The ion extraction grid of claim 13, wherein, A first diameter of the hole portion at an upper surface of the ion extraction electrode is equal to a second diameter of the hole portion inside the ion extraction electrode, a third diameter of the hole portion at a lower surface of the ion extraction electrode is greater than the second diameter of the hole portion inside the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is greater than the first diameter of the hole portion at the upper surface of the ion extraction electrode. Alternatively, the first diameter of the hole portion at the upper surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, the third diameter of the hole portion at the lower surface of the ion extraction electrode is equal to the second diameter of the hole portion at the inside of the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is smaller than the first diameter of the hole portion at the upper surface of the ion extraction electrode. Alternatively, the first diameter of the hole portion at the upper surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, the third diameter of the hole portion at the lower surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is equal to the first diameter of the hole portion at the upper surface of the ion extraction electrode. Alternatively, the first diameter of the hole portion at the upper surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, the third diameter of the hole portion at the lower surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is smaller than the first diameter of the hole portion at the upper surface of the ion extraction electrode. Alternatively, the first diameter of the hole portion at the upper surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, the third diameter of the hole portion at the lower surface of the ion extraction electrode is greater than the second diameter of the hole portion at the inside of the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is greater than the first diameter of the hole portion at the upper surface of the ion extraction electrode. Alternatively, the first diameter of the hole portion at the upper surface of the ion extraction electrode is equal to the second diameter of the hole portion at the inside of the ion extraction electrode, the third diameter of the hole portion at the lower surface of the ion extraction electrode is equal to the second diameter of the hole portion at the inside of the ion extraction electrode, and the third diameter of the hole portion at the lower surface of the ion extraction electrode is equal to the first diameter of the hole portion at the upper surface of the ion extraction electrode.

16. The ion extraction grid of claim 13, wherein, The cross section of the hole portion is columnar in which the size of the upper portion and the lower portion is equal to the size of the middle portion, or the cross section of the hole portion is table-like in which the size of the upper portion and / or the lower portion is greater than the size of the middle portion.

17. The ion extraction grid of claim 14, wherein, The ion extraction electrode has a convex spherical surface, and the first hole portions and the second hole portions are distributed around the center of the spherical surface as viewed from the front surface of the spherical surface, and the second hole portions are distributed outside at least a part of the first hole portions in the radial direction.

18. The ion extraction grid of claim 17, wherein, The intervals of one pair of adjacent hole portions are equal to the intervals of another pair of adjacent hole portions, and the plurality of hole portions are uniformly distributed on the spherical surface.

19. The ion extraction grid of claim 17, wherein, The intervals of at least one pair of adjacent hole portions are not equal to the intervals of another pair of adjacent hole portions, and the plurality of hole portions are non-uniformly distributed on the spherical surface.

20. The ion extraction grid of claim 19, wherein, The spacing between the adjacent holes decreases as the distance from the center of the spherical surface increases; the density of the holes on the spherical surface away from the center is greater than the density of the holes on the spherical surface near the center.

21. An ion source having a housing, the ion source further comprising: a discharge chamber disposed inside the housing; an ion extraction grid disposed on the discharge chamber, the ion extraction grid being capable of extracting ions and forming an ion beam, the ion extraction grid having an arc-shaped cross section, and a plurality of holes disposed on the ion extraction grid, the plurality of holes penetrating the ion extraction grid and having straight center axes; a radio frequency antenna disposed inside the housing; and a gas introduction structure for introducing a gas into the discharge chamber from outside the housing; wherein at least some of the plurality of holes have center axes that are not perpendicular to tangents of a surface of the ion extraction grid around the holes. The ion source includes an acceleration grid group composed of at least two of the ion extraction grids, and a plurality of holes in different ion extraction grids that coincide in an ion extraction direction have the same shape and / or different shapes.

22. The ion source of claim 21, wherein, The same shape is a columnar shape in which the size of an upper portion and / or a lower portion of the hole is equal to the size of an intermediate portion, or the same shape is a table-shaped shape in which the size of the upper portion and / or the lower portion of the hole is greater than the size of the intermediate portion.

23. The ion source of claim 22, wherein, 24. An ion source having a housing, the ion source further comprising: a discharge chamber disposed inside the housing; an ion extraction grid disposed on the discharge chamber, the ion extraction grid being capable of extracting ions and forming an ion beam, the ion extraction grid having an arc-shaped cross section, and a plurality of holes disposed on the ion extraction grid, the plurality of holes penetrating the ion extraction grid and having straight center axes; a radio frequency antenna disposed inside the housing; and a gas introduction structure for introducing a gas into the discharge chamber from outside the housing; wherein a thickness of the ion extraction grid is determined in accordance with the size of the holes and the spacing between adjacent holes, and the ratio between the spacing between the adjacent holes and the thickness of the ion extraction grid is L, and 0.1 ≤ L ≤ 20. The method includes: forming an ion extraction grid having an arc-shaped cross section; and 25. A method of manufacturing an ion extraction grid, characterized by: disposing a plurality of holes on the ion extraction grid, the plurality of holes penetrating the ion extraction grid and having straight center axes; wherein at least some of the plurality of holes have center axes that are not perpendicular to tangents of a surface of the ion extraction grid around the holes. The method includes: forming an ion extraction grid having an arc-shaped cross section; and 26. A method of manufacturing an ion extraction grid, characterized by: disposing a plurality of holes on the ion extraction grid, the plurality of holes penetrating the ion extraction grid and having straight center axes; wherein a thickness of the ion extraction grid is determined in accordance with the size of the holes and the spacing between adjacent holes, and the ratio between the spacing between the adjacent holes and the thickness of the ion extraction grid is L, and 0.1 ≤ L ≤ 20. ​ ​

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