Coated glass and preparation method
By introducing a nitrogen-silicon mixed layer into the coated glass and adjusting the gas flow ratio through magnetron sputtering deposition technology, the problem of low absorption and low transmittance in existing coated glass products is solved, and the effect of high absorption, low transmissivity and low reversibility is achieved.
Patent Information
- Application Number
- CN202310423813.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-04-19
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2043-04-19
AI Technical Summary
Due to the low absorption rate of existing coated glass products, it is difficult to have both low reflectivity and low transmittance.
A coating structure including a glass matrix, a first silicon nitride layer, a nitrogen-silicon mixed layer, a metal layer and a second silicon nitride layer are adopted, and the flow ratio of argon and nitrogen is adjusted to form a mixed layer of silicon nitride and silicon through magnetron sputtering deposition technology.
By increasing silicon atomic bonds, the absorption rate of the film layer to light is increased, the transmittance and reflectivity are reduced, and the effect of high absorption, low transmission and low inversion is achieved.
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Figure CN116462422B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of glass technology, and more specifically, to a coated glass and a preparation method thereof. Background Art
[0002] Existing coated glass products are based on the principle of optical transmission. When coated glass products achieve ultra-low reflection, it is difficult to reduce the transmittance. Ultra-low reflection means that the coated glass products have very low reflectivity, and transmittance is the penetration rate. Reflectivity and transmittance are a pair of contradictions. Since the absorption rate of existing coated glass products is low, when the reflectivity is very low, the transmittance will be very high, and it is difficult to achieve the effect of low transmittance and low reflection.
[0003] Existing coating products have control over transmittance, reflection, and absorption. Since the coating materials conventionally used in vacuum magnetron sputtering are generally metal oxides / metals with relatively stable absorption rates, there will be a contradiction between transmittance and reflectivity. In order to obtain ultra-low reflectivity, it is difficult to reduce the transmittance.
[0004] Especially for single-piece heat-reflective coated glass products, there is a lack of adjustment space due to the simple film layer structure. Summary of the invention
[0005] The purpose of the present application is to provide a coated glass and a preparation method, aiming to solve the technical problem in the prior art that the existing glass cannot have both low reflectivity and low transmittance performance due to its low absorption rate.
[0006] In the first aspect, in order to achieve the above-mentioned purpose, the technical solution adopted by the present application is: to provide a coated glass, comprising:
[0007] A glass substrate and the following components sequentially plated on the same side of the glass substrate:
[0008] A first silicon nitride layer, a silicon nitride mixed layer, a metal layer, and a second silicon nitride layer;
[0009] The silicon-nitrogen mixed layer is a mixed layer of silicon nitride and silicon.
[0010] In one embodiment, the metal layer is a nickel-chromium layer.
[0011] In one embodiment, the thickness of the nitrogen-silicon mixed layer is 10nm-20nm.
[0012] In one embodiment, the thickness of the first silicon nitride layer is 40nm-50nm, the thickness of the metal layer is 5nm-15nm, and the thickness of the second silicon nitride layer is 50nm-70nm.
[0013] In the second aspect, in order to achieve the above-mentioned purpose, the technical solution adopted by the present application is to provide a method for preparing coated glass:
[0014] A first silicon nitride layer, a silicon nitrogen mixed layer, a metal layer, and a second silicon nitride layer are sequentially plated on the same side of the glass substrate; wherein, a silicon aluminum target is used as a target material, and a mixed gas of argon and nitrogen is used as a reaction gas, and the first silicon nitride layer, the silicon nitrogen mixed layer, and the second silicon nitride layer are deposited by magnetron sputtering; when the silicon nitrogen mixed layer is deposited by magnetron sputtering, the flow ratio of argon and nitrogen introduced into the reaction gas is 1000:50-1000.
[0015] In one of the embodiments, when the nitrogen-silicon mixed layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:600 or 1000:300 or 1000:100 or 1000:60 or 1000:50.
[0016] In one of the embodiments, when magnetron sputtering the nitrogen-silicon mixed layer, when the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:50, the sputtering power is 10kw-20kw.
[0017] In one embodiment, the silicon-aluminum mass ratio of the silicon-aluminum target is 90:10.
[0018] In one embodiment, when the first silicon nitride layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 900:800 to 800:600.
[0019] In one embodiment, when the second silicon nitride layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 800:600 to 1000:600.
[0020] The beneficial effect of the coated glass and preparation method provided in the present application lies in that the coated glass of the present application has the presence of a nitrogen-silicon mixed layer, and the nitrogen-silicon mixed layer is a mixture layer of silicon nitride and silicon. Since silicon atoms are doped in silicon nitride, the silicon atom bonds increase, so that the light absorption rate of the film layer will be improved, and the transmittance and reflectivity will be further reduced, thereby achieving the effect of high absorption, low transmittance and low reflection.
[0021] The preparation method provided in the present application realizes the preparation of coated glass. Specifically, a silicon-aluminum target is used as a target material, and a mixed gas of argon and nitrogen is used as a reaction gas to magnetron sputteringly deposit the first silicon nitride layer, the nitrogen-silicon mixed layer, and the second silicon nitride layer.
[0022] When the nitrogen-silicon mixed layer is deposited by magnetron sputtering, the flow ratio of argon to nitrogen is adjusted to reduce the proportion of nitrogen, which will produce excess silicon and form a mixed layer of silicon nitride and silicon. The specific flow ratio of argon to nitrogen in the reaction gas is 1000:50~1000. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0024] Figure 1 This is a schematic diagram of the coated glass structure provided in an embodiment of the present application.
[0025] In the figure, 1, glass substrate; 2, first silicon nitride layer; 3, nitrogen-silicon mixed layer; 4, metal layer; 5, second silicon nitride layer. DETAILED DESCRIPTION
[0026] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0027] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0028] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.
[0029] In the description of the present application, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0030] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0031] See also Figure 1 The present application provides a specific embodiment of a coated glass. The coated glass provided in this embodiment includes a glass substrate 1, a first silicon nitride layer 2, a nitrogen-silicon mixed layer 3, a metal layer 4, and a second silicon nitride layer 5.
[0032] The glass substrate 1 can be made of ordinary white float glass.
[0033] The first silicon nitride layer 2 , the silicon nitrogen mixed layer 3 , the metal layer 4 , and the second silicon nitride layer 5 are sequentially plated on the same side surface of the glass substrate 1 .
[0034] The first silicon nitride layer 2, the silicon nitrogen mixed layer 3, the metal layer 4, and the second silicon nitride layer 5 are deposited in sequence. Specifically, the first silicon nitride layer 2 is directly deposited on the surface of the glass substrate 1, and then the silicon nitrogen mixed layer 3 is deposited on the surface of the first silicon nitride layer 2, followed by the metal layer 4 and the second silicon nitride layer 5 in sequence.
[0035] The silicon nitrogen mixed layer 3 provided in this embodiment is specifically a mixed layer of silicon nitride and silicon. Its effect is that silicon nitride is often used as the dielectric layer in current technology. Experiments have shown that when the dielectric layer adopts a mixed layer of silicon nitride and silicon, due to the doping of silicon atoms in the silicon nitride, the silicon atom bonds increase and the light absorption rate of the film layer will be improved, and the transmittance and reflectivity will be further reduced, achieving the effect of high absorption, low transmittance and low reflection.
[0036] Therefore, compared with the silicon nitride dielectric layer, the mixed layer of silicon nitride and silicon can absorb light better, improve the absorptivity, and reduce the transmittance and reflectivity.
[0037] Specifically, the light directed toward the glass can be divided into three parts: the first part is reflected, the second part passes through the glass, and the third part is absorbed. Therefore, the three effects of glass on light form the reflectivity, transmittance and absorptivity of the glass.
[0038] Reflectivity plus transmittance plus absorptivity equals 100%. When the absorptivity increases, the reflectivity and transmittance both decrease, so to obtain low reflectivity and low transmittance at the same time, the absorptivity must be increased.
[0039] The reflectivity of coated glass in existing technology is as high as 29%. Many cities limit light pollution and require a reflectivity of 20% or even lower. The higher the reflectivity, the more light pollution will be caused, so the reflectivity must be reduced, and the transmittance should not be too high. The lower the transmittance, the better the indoor privacy can be guaranteed.
[0040] Therefore, increasing the light absorption rate can obtain lower reflectivity and lower light transmittance, and reducing the light transmittance can also save energy.
[0041] Furthermore, as a preferred implementation provided in this embodiment, the metal layer 4 is a nickel-chromium layer. Alternatively, a chromium layer alone may be used.
[0042] The thickness of the silicon-nitrogen mixed layer 3 in this embodiment may be 10 nm-20 nm.
[0043] The silicon-nitrogen mixed layer 3 within this thickness range can ensure the light absorption effect.
[0044] The thickness of other layers in this embodiment can be as follows: the thickness of the first silicon nitride layer 2 is 40nm-50nm, the thickness of the metal layer 4 is 5nm-15nm, and the thickness of the second silicon nitride layer 5 is 50nm-70nm.
[0045] As an example 1:
[0046] The preferred thickness of the silicon-nitrogen mixed layer 3 of the present coated glass is 15 nm.
[0047] The preferred thickness of the first silicon nitride layer 2 of the coated glass is 45 nm.
[0048] The preferred thickness of the second silicon nitride layer 5 of the present coated glass is 66 nm.
[0049] The preferred thickness of the metal layer 4 of the present coated glass is 9 nm.
[0050] The metal layer 4 is preferably a nickel-chromium layer. The glass substrate 1 is preferably a 6C white glass.
[0051] The coated glass provided in the first embodiment achieves the following effects: light transmittance ≤38% (high privacy), reflectivity ≤9% (low light pollution), and shielding coefficient ≤0.55.
[0052] The coated glass provided in the first embodiment can also achieve the consistency of color tones of transmission and reflection of ordinary float glass after coating.
[0053] Therefore, compared with the prior art, the first embodiment can realize high-absorption, ultra-low-reflection and low-transmittance glass products, and enhance the market influence. The performance is superior, the ultra-low external reflection can reduce light pollution, and the low transmittance greatly improves the energy-saving effect of the glass.
[0054] In a second aspect, the technical solution of the present application also provides a specific embodiment of a method for preparing coated glass.
[0055] In an embodiment of the preparation method, a first silicon nitride layer 2, a silicon nitrogen mixed layer 3, a metal layer 4, and a second silicon nitride layer 5 are sequentially plated on the same side of the glass substrate 1; wherein, a silicon aluminum target is used as a target material, and a mixed gas of argon and nitrogen is used as a reaction gas, and the first silicon nitride layer 2, the silicon nitrogen mixed layer 3, and the second silicon nitride layer 5 are deposited by magnetron sputtering; when the silicon nitrogen mixed layer 3 is deposited by magnetron sputtering, the flow ratio of argon and nitrogen introduced into the reaction gas is 1000:50~1000.
[0056] Specifically, in the process of using a vacuum magnetron sputtering method to verify the effect of the ratio of nitrogen to argon on the performance of the sputtered film layer, it was found that the smaller the amount of nitrogen, the greater the absorption of the film layer.
[0057] Through verification, it is concluded that when the flow rate ratio of nitrogen is smaller than that of argon, the absorption rate of light by the film layer can be better improved.
[0058] Combined with the coating sequence of conventional sputtering materials on float glass substrates, it is concluded that the coated glass in this embodiment is sequentially coated with a first silicon nitride layer 2, a silicon nitrogen mixed layer 3, a metal layer 4, and a second silicon nitride layer 5. The thickness of each layer of different materials is adjusted, and the flow ratio of argon and nitrogen is adjusted, especially the transmittance of the coated glass obtained in the nitrogen-deficient state, that is, when the proportion of nitrogen is less than that of argon.
[0059] Through the above method, it can be verified that when the nitrogen-silicon mixed layer 3 is deposited by magnetron sputtering, a lower reflectivity and lower transmittance can be obtained when the flow ratio of argon gas to nitrogen gas in the reaction gas is 1000:50-1000, so that the absorption rate of the film layer is higher.
[0060] Specifically, the operation is as follows: during the glass preparation process, when magnetron coating the silicon-nitrogen mixed layer 3, an argon-nitrogen mixed gas with a high argon ratio and a low nitrogen ratio is used as the reaction gas. By gradually reducing the nitrogen, the reaction efficiency of the silicon-aluminum target sputtering material will decrease, and the deposited film will have a silicon nitride and silicon mixture coating. Since the film layer is doped with silicon atoms in the silicon nitride, the silicon atom bonds increase, so that the film layer's absorption of light will be improved, and the transmittance and reflectivity will be further reduced.
[0061] Preferably, during the verification process, when the nitrogen-silicon mixed layer 3 is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:600 or 1000:300 or 1000:100 or 1000:60 or 1000:50.
[0062] When the flow rate ratio of argon gas to nitrogen gas adopts the above preferred ratio, a lower reflectivity and a lower light transmittance can be obtained, so that the absorption rate of the film layer is higher.
[0063] Furthermore, when magnetron sputtering the nitrogen-silicon mixed layer 3, when the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:50, the sputtering power is 10kw-20kw.
[0064] Specifically, when the flow ratio of argon gas to nitrogen gas is Ar:N2=1000:50 and the sputtering power is 15kw, the performance of the obtained coated glass product is as follows: transmittance 35% and reflectivity 9%.
[0065] The silicon-aluminum mass ratio of the silicon-aluminum target selected in this embodiment is 90:10.
[0066] The preparation method provided in this embodiment also provides that, when depositing the first silicon nitride layer 2 by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 900:800-800:600.
[0067] When the second silicon nitride layer 5 is deposited by magnetron sputtering, the flow ratio of the argon gas to the nitrogen gas introduced in the reaction gas is 800:600-1000:600.
[0068] Preferably, when the first silicon nitride layer 2 is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas is 800:600. When the second silicon nitride layer 5 is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas is 1000:600.
[0069] According to the above preparation method, the present application provides Example 1 of a preferred preparation method.
[0070] In the first embodiment:
[0071] A silicon-aluminum target is used as the target material, and the mass ratio of silicon to aluminum of the silicon-aluminum target is 90:10.
[0072] Using a mixed gas of argon and nitrogen as the reaction gas, when coating the first silicon nitride layer 2, the flow ratio of argon and nitrogen is adjusted to 800:600; after the first silicon nitride layer 2 is completed, the flow ratio of argon and nitrogen is adjusted to 1000:50. At this time, the sputtering power is adjusted to 15kw, and the nitrogen-silicon mixed layer 3 is sputtered. After completion, the metal layer 4 is coated. Finally, the flow ratio of argon and nitrogen is adjusted to 1000:600, and the last layer, that is, the second silicon nitride layer 5, is sputtered to complete the production of the coated glass provided in this embodiment.
[0073] In summary, the beneficial effect of the coated glass provided by the present application lies in that the coated glass of the present application has the presence of a silicon nitrogen mixed layer 3, and the silicon nitrogen mixed layer 3 is a mixture layer of silicon nitride and silicon. Since silicon atoms are doped in silicon nitride, the silicon atom bonds increase, so that the light absorption rate of the film layer will be improved, and the transmittance and reflectivity will be further reduced, thereby achieving the effect of high absorption, low transmittance and low reflection.
[0074] The preparation method provided in the present application realizes the preparation of coated glass. Specifically, a silicon-aluminum target is used as a target material, and a mixed gas of argon and nitrogen is used as a reaction gas to magnetron sputteringly deposit the first silicon nitride layer 2, the nitrogen-silicon mixed layer 3, and the second silicon nitride layer 5.
[0075] When the nitrogen-silicon mixed layer 3 is deposited by magnetron sputtering, the flow ratio of argon to nitrogen is adjusted to reduce the proportion of nitrogen, so that excess silicon is produced and a mixed layer of silicon nitride and silicon is formed. The specific flow ratio of argon to nitrogen in the reaction gas is 1000:50-1000.
[0076] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims
1. Coated glass, characterized in that: include: A glass substrate and the following components sequentially plated on the same side of the glass substrate: A first silicon nitride layer, a silicon nitride mixed layer, a metal layer, and a second silicon nitride layer; The nitrogen-silicon mixed layer is a mixed layer of silicon nitride and silicon; the first silicon nitride layer is prepared by magnetron sputtering deposition, and the magnetron sputtering deposition uses a silicon-aluminum target as a target material, and a mixed gas of argon and nitrogen is used as a reaction gas, and the flow ratio of argon to nitrogen is 900:800 to 800:
600.
2. The coated glass according to claim 1, characterized in that: The metal layer is a nickel-chromium layer.
3. The coated glass according to claim 1, characterized in that: The thickness of the nitrogen-silicon mixed layer is 10nm-20nm.
4. The coated glass according to claim 1, characterized in that: The thickness of the first silicon nitride layer is 40nm-50nm, the thickness of the metal layer is 5nm-15nm, and the thickness of the second silicon nitride layer is 50nm-70nm.
5. A method for preparing coated glass, characterized in that: A first silicon nitride layer, a silicon nitrogen mixed layer, a metal layer, and a second silicon nitride layer are sequentially plated on the same side of a glass substrate; wherein a silicon aluminum target is used as a target material, and a mixed gas of argon and nitrogen is used as a reaction gas, and the first silicon nitride layer, the silicon nitrogen mixed layer, and the second silicon nitride layer are deposited by magnetron sputtering. When the silicon nitrogen mixed layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:50-1000; when the first silicon nitride layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 900:800-800:
600.
6. The method for preparing coated glass according to claim 5, characterized in that: When the nitrogen-silicon mixed layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:600 or 1000:300 or 1000:100 or 1000:60 or 1000:
50.
7. The method for preparing coated glass according to claim 5, characterized in that: When magnetron sputtering the nitrogen-silicon mixed layer, when the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 1000:50, the sputtering power is 10kw-20kw.
8. The method for preparing coated glass according to claim 5, characterized in that: The silicon-aluminum mass ratio of the silicon-aluminum target is 90:
10.
9. The method for preparing coated glass according to claim 5, characterized in that: When the second silicon nitride layer is deposited by magnetron sputtering, the flow ratio of argon gas to nitrogen gas introduced into the reaction gas is 800:600-1000:600.