Evaporation mask and method for manufacturing the same

Abstract

The present invention relates to a vapor deposition mask and a method for manufacturing the vapor deposition mask. The wall surface of the through hole of the vapor deposition mask includes: a first wall surface extending from the first end to the second surface; a second wall surface extending from the second end to the first surface; a second wall surface connected to the first wall surface at a connecting portion; and a connecting portion connecting the first wall surface and the second wall surface. When the through hole is observed from the first surface side along the normal direction of the first surface, the first end of the through hole includes: a first portion extending along the first direction and having a first dimension; and a second portion extending along a second direction intersecting the first direction and having a second dimension shorter than the first dimension. The first wall surface includes: a first wall surface section extending from the first portion to the connecting portion; and a second wall surface section extending from the second portion to the connecting portion. The height of the first wall surface section is smaller than the height of the second wall surface section.

Description

[0001] This application is a divisional application. The Chinese national application number of the original application is 202010227944.8, the application date is March 27, 2020, and the name of the invention is “Evaporation mask and method for manufacturing an evaporation mask”. Technical Field

[0002] Embodiments of the present invention relate to a vapor deposition mask and a method for manufacturing the vapor deposition mask. Background Art

[0003] In recent years, the market has demanded high-definition display devices for electronic devices such as smartphones and tablet computers. For example, the display devices have a pixel density of 400 ppi or higher, or 800 ppi or higher.

[0004] Organic EL display devices have attracted attention due to their good responsiveness, low power consumption, and high contrast. As a method for forming pixels of an organic EL display device, a method is known in which a material constituting the pixels is attached to a substrate by vapor deposition. In this case, first, a vapor deposition mask including through holes is prepared. Next, in a vapor deposition device, an organic material and / or an inorganic material is vapor deposited while the vapor deposition mask is in close contact with the substrate, thereby forming the organic material and / or the inorganic material on the substrate.

[0005] As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, there is known a method of forming through holes in a metal plate by etching the metal plate.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent No. 5382259 Summary of the Invention

[0009] Problems to be solved by the invention

[0010] During the vapor deposition process, a portion of the vapor deposition material moving from the vapor deposition source toward the vapor deposition mask moves in a direction oblique to the normal of the metal plate forming the vapor deposition mask. This portion of the vapor deposition material moving in a direction oblique to the normal of the metal plate adheres to the walls of the through-holes rather than to the substrate. As a result, the vapor deposition layer formed on the substrate tends to become thinner near the through-hole walls. This phenomenon, in which the vapor deposition material's adhesion to the substrate is hindered by the through-hole walls, is also called shadowing.

[0011] To suppress the generation of shadows, one approach is to reduce the height of the through-hole walls of the vapor deposition mask. However, if the height of the through-hole walls is reduced throughout the vapor deposition mask, the strength of the vapor deposition mask will be reduced, and the vapor deposition mask will be more susceptible to damage and deformation.

[0012] An object of the embodiments of the present invention is to provide a vapor deposition mask and a method for manufacturing the vapor deposition mask that can effectively solve such problems.

[0013] Means for solving problems

[0014] A vapor deposition mask having through holes according to one embodiment of the present invention includes:

[0015] Page 1;

[0016] a second surface located on the opposite side of the first surface; and

[0017] The wall surface includes a first end located at the first surface and a second end located at the second surface,

[0018] The wall defines the through hole.

[0019] The wall surface includes: a first wall surface extending from the first end toward the second surface; a second wall surface extending from the second end toward the first surface; and a connecting portion connecting the first wall surface and the second wall surface.

[0020] When the through hole is viewed from the first surface side along the normal direction of the first surface, the first end of the through hole includes: a first portion extending along a first direction and having a first dimension; and a second portion extending along a second direction intersecting the first direction and having a second dimension shorter than the first dimension.

[0021] The first wall includes: a first wall section extending from the first portion toward the connecting portion; and a second wall section extending from the second portion toward the connecting portion.

[0022] The height of the first wall surface section is smaller than the height of the second wall surface section.

[0023] Effects of the Invention

[0024] According to the vapor deposition mask of the embodiment of the present invention, it is possible to suppress the occurrence of defects such as deformation of the vapor deposition mask and to suppress the occurrence of shadows. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a diagram showing a vapor deposition apparatus including a vapor deposition mask apparatus according to one embodiment of the present invention.

[0026] Figure 2 Is to show the use of Figure 1 A cross-sectional view of an organic EL display device manufactured using the vapor deposition mask apparatus shown.

[0027] Figure 3This is a plan view showing a vapor deposition mask apparatus according to one embodiment of the present invention.

[0028] Figure 4A The first side is viewed from the Figure 3 A top view of the effective area of ​​the evaporation mask of the evaporation mask apparatus.

[0029] Figure 4B The figure shows the image viewed from the second side. Figure 3 A top view of the effective area of ​​the evaporation mask of the evaporation mask apparatus.

[0030] Figure 5 It is along Figure 4A Cross-sectional view of line VV.

[0031] Figure 6 It is along Figure 4A Cross-sectional view along line VI-VI.

[0032] Figure 7 It is along Figure 4A Cross-sectional view along line VII-VII.

[0033] Figure 8 It is a plan view showing, in enlarged form, the first end of the through-hole of the vapor deposition mask.

[0034] Figure 9 It is along Figure 8 Cross-sectional view along line IX-IX.

[0035] Figure 10 It is along Figure 8 Cross-sectional view of line XX.

[0036] Figure 11 It is a diagram for explaining a method of measuring the height of the first wall surface of the through-hole of the vapor deposition mask.

[0037] Figure 12 It is a diagram for explaining a method of measuring the height of the first wall surface of the through-hole of the vapor deposition mask.

[0038] Figure 13 It is a plan view showing an example of an organic EL display device.

[0039] Figure 14 It is along Figure 13 Cross-sectional view along line XIV-XIV.

[0040] Figure 15 This is a schematic diagram for generally explaining an example of a method for manufacturing a vapor deposition mask.

[0041] Figure 16 It is a diagram showing the process of forming a resist film on a metal plate.

[0042] Figure 17 It is a diagram showing the process of patterning the resist film.

[0043] Figure 18 It is a diagram showing the first surface etching step.

[0044] Figure 19 It is a diagram showing the second surface etching step.

[0045] Figure 20 It is a diagram showing the second surface etching step.

[0046] Figure 21 It is a plan view showing the second resist pattern provided on the second surface of the metal plate.

[0047] Figure 22 It is a cross-sectional view showing the second surface etching step performed between the first portions of the second resist pattern in the metal plate.

[0048] Figure 23 It is a cross-sectional view showing the second surface etching step performed between the first portions of the second resist pattern in the metal plate.

[0049] Figure 24 It is a cross-sectional view showing the second surface etching step performed between the second portions of the second resist pattern in the metal plate.

[0050] Figure 25 It is a cross-sectional view showing the second surface etching step performed between the second portions of the second resist pattern in the metal plate.

[0051] Figure 26 This is a diagram for explaining another example of a method for measuring the height of the first wall surface of the through-hole of the vapor deposition mask.

[0052] Figure 27 It is a plan view showing a first modified example of the organic EL display device.

[0053] Figure 28A It is a plan view showing a second modified example of the organic EL display device.

[0054] Figure 28B This is a plan view showing another example of the second modification of the organic EL display device.

[0055] Figure 29 Is to form Figure 28A FIG1 is an enlarged plan view showing a first end of a through-hole of a vapor deposition mask used for forming a second vapor deposition layer of an organic EL display device.

[0056] Figure 30 It is a plan view showing a third modified example of the organic EL display device.

[0057] Figure 31 Is to form Figure 30 FIG1 is an enlarged plan view showing a first end of a through-hole of a vapor deposition mask used for forming a first vapor deposition layer of an organic EL display device.

[0058] Figure 32 It is a plan view showing a first end of a through-hole of a vapor deposition mask.

[0059] Figure 33 It shows Figure 32 A cross-sectional view of the first portion of the first end of the through hole.

[0060] Figure 34 It shows Figure 32 A cross-sectional view of the second portion of the first end of the through hole.

[0061] Figure 35 This is an enlarged plan view showing a modified example of the first end of the through-hole of the vapor deposition mask.

[0062] Figure 36 It is a figure which shows the results of Examples 1-3 and Comparative Examples 1-2. DETAILED DESCRIPTION

[0063] In this specification and the drawings, unless otherwise specified, terms such as “substrate,” “base material,” “plate,” “sheet,” and “film” mean a substance serving as a basis for a certain structure and are not distinguished from each other merely based on differences in name.

[0064] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" and values ​​of lengths and angles that specify shapes or geometric conditions and their degrees are not limited to strict meanings and are interpreted within a range that includes the degree to which the same function can be expected.

[0065] In this specification and the drawings, unless otherwise specified, when a component, such as a part or region, is referred to as being "above," "below," "on the upper side," "below," or "above" or "below" another component, such as another region, this includes situations where the component is directly in contact with the other component. Furthermore, this also includes situations where another component is located between the component and the other component, i.e., situations where the component is in indirect contact. Furthermore, unless otherwise specified, when using terms such as "above," "upper side," "above," or "lower," "lower side," or "below," the up and down directions may be reversed.

[0066] In this specification and the drawings, unless otherwise specified, identical or similar reference numerals are used to designate identical parts or parts having the same functions, and repeated descriptions thereof may be omitted. Furthermore, for ease of description, the dimensional ratios in the drawings may differ from the actual ratios, or portions of the components may be omitted from the drawings.

[0067] Unless otherwise specified in this specification and the accompanying drawings, the present invention may be combined with other embodiments or variations within the scope of no inconsistency. Furthermore, other embodiments may be combined with each other, or with other embodiments and variations within the scope of no inconsistency. Furthermore, variations may be combined with each other within the scope of no inconsistency.

[0068] In this specification and the accompanying drawings, unless otherwise specified, when multiple steps are disclosed regarding a method such as a manufacturing method, other undisclosed steps may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary within the scope of no contradiction.

[0069] In this specification and the drawings, unless otherwise specified, numerical ranges expressed using the symbol "to" include the numerical values ​​placed before and after the symbol "to." For example, a numerical range defined by the expression "34 to 38 mass %" is the same as a numerical range defined by the expression "34 mass % or more and 38 mass % or less."

[0070] In this specification and the accompanying drawings, unless otherwise specified, in one embodiment of this specification, an evaporation mask and a method for manufacturing the same are described as an example for patterning an organic material in a desired pattern on a substrate when manufacturing an organic EL display device. However, this embodiment is not limited to such applications, and this embodiment can be applied to evaporation masks used in various applications. For example, the mask of this embodiment can be used to manufacture a device for displaying or projecting an image or screen image for representing virtual reality (so-called VR) or augmented reality (so-called AR).

[0071] A first aspect of the present invention is a vapor deposition mask having through holes, comprising:

[0072] Page 1;

[0073] a second surface located on the opposite side of the first surface; and

[0074] The wall surface includes a first end located at the first surface and a second end located at the second surface,

[0075] The wall defines the through hole.

[0076] The wall surface includes: a first wall surface extending from the first end toward the second surface; a second wall surface extending from the second end toward the first surface; and a connecting portion connecting the first wall surface and the second wall surface.

[0077] When the through hole is viewed from the first surface side along the normal direction of the first surface, the first end of the through hole includes: a first portion extending along a first direction and having a first dimension; and a second portion extending along a second direction intersecting the first direction and having a second dimension shorter than the first dimension.

[0078] The first wall includes: a first wall section extending from the first portion toward the connecting portion; and a second wall section extending from the second portion toward the connecting portion.

[0079] The height of the first wall surface section is smaller than the height of the second wall surface section.

[0080] A second aspect of the present invention is the vapor deposition mask of the first aspect, wherein the second dimension may be shorter than the first dimension by 2 μm or more.

[0081] The height of the first wall surface section may be smaller than the height of the second wall surface section by 1 μm or more.

[0082] The third aspect of the present invention is that, in the vapor deposition mask of the first aspect or the second aspect, when the through hole is observed from the first surface side along the normal direction of the first surface, the interval between two adjacent through holes in a direction perpendicular to the first direction, i.e., the first interval, can be larger than the interval between two adjacent through holes in a direction perpendicular to the second direction, i.e., the second interval.

[0083] According to a fourth aspect of the present invention, in the vapor deposition mask of the third aspect, a difference between the first interval and the second interval may be 2 μm or more.

[0084] According to a fifth aspect of the present invention, in the vapor deposition mask of the third aspect, a difference between the first interval and the second interval may be 5 μm or more.

[0085] According to a sixth aspect of the present invention, in the vapor deposition mask of any one of the third to fifth aspects, the difference between the first and second intervals may be 100 μm or less.

[0086] The seventh embodiment of the present invention is that, in the vapor deposition mask of the above-mentioned first to sixth embodiments, the height of the above-mentioned wall surface at the cross section including the central part of the above-mentioned first part and perpendicular to the above-mentioned first direction, i.e., the first height, and the height of the above-mentioned wall surface at the cross section including the central part of the above-mentioned second part and perpendicular to the above-mentioned second direction, i.e., the second height, can be smaller than the thickness of the above-mentioned vapor deposition mask.

[0087] An eighth aspect of the present invention is the vapor deposition mask according to the seventh aspect, wherein the difference between the first height and the second height may be 0.3 times or more the thickness of the vapor deposition mask.

[0088] According to a ninth aspect of the present invention, in the vapor deposition mask of the seventh or eighth aspect, the difference between the first height and the second height may be 0.7 times or less the thickness of the vapor deposition mask.

[0089] According to a tenth aspect of the present invention, in the vapor deposition mask of any one of the first to ninth aspects, the height of the first wall surface section and the height of the second wall surface section may be 5 μm or less.

[0090] According to an eleventh aspect of the present invention, in the vapor deposition mask of the first to tenth aspects, the thickness of the vapor deposition mask may be 50 μm or less, or 30 μm or less.

[0091] A twelfth aspect of the present invention is a method for manufacturing a vapor deposition mask having through holes, the method comprising:

[0092] a step of preparing a metal plate having a first surface and a second surface located on the opposite side of the first surface; and

[0093] an etching step of etching the metal plate to form the through hole in the metal plate;

[0094] The through hole includes a wall surface including a first end located on the first surface side and a second end located on the second surface side.

[0095] The wall surface includes: a first wall surface extending from the first end toward the second surface; a second wall surface extending from the second end toward the first surface; and a connecting portion connecting the first wall surface and the second wall surface.

[0096] The etching process includes: a first surface etching process, wherein the first surface is etched with an etching liquid to form the first wall surface; and a second surface etching process, wherein the second surface is etched with an etching liquid to form the second wall surface.

[0097] When the through hole is viewed from the first surface side along the normal direction of the first surface, the first end of the through hole includes: a first portion extending along a first direction and having a first dimension; and a second portion extending along a second direction intersecting the first direction and having a second dimension shorter than the first dimension.

[0098] The first wall includes: a first wall section extending from the first portion toward the connecting portion; and a second wall section extending from the second portion toward the connecting portion.

[0099] The height of the first wall surface section is smaller than the height of the second wall surface section.

[0100] According to a 13th aspect of the present invention, in the method for manufacturing a vapor deposition mask according to the 12th aspect, the second dimension may be shorter than the first dimension by 2 μm or more.

[0101] The height of the first wall surface section may be smaller than the height of the second wall surface section by 1 μm or more.

[0102] A fourteenth aspect of the present invention is that in the method for manufacturing a vapor deposition mask according to the twelfth or thirteenth aspect, the second surface etching step may include a step of etching a region of the second surface not covered by the second resist pattern using an etching solution.

[0103] The second resist pattern may include: a first resist portion extending along the first portion of the first end and having a first width; and a second resist portion extending along the second portion of the first end and having a second width.

[0104] The first width may be greater than the second width.

[0105] According to a fifteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to the fourteenth aspect, the difference between the first width and the second width may be 2 μm or more.

[0106] According to a sixteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to the fourteenth aspect, the difference between the first width and the second width may be 5 μm or more.

[0107] According to a seventeenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to any one of the fourteenth to sixteenth aspects, the difference between the first width and the second width may be 100 μm or less.

[0108] According to an eighteenth aspect of the present invention, in the method for manufacturing a vapor deposition mask according to any one of the fourteenth to seventeenth aspects, the second surface etching step may be performed until a gap is formed between the metal plate and the first and second resist portions.

[0109] According to a nineteenth aspect of the present invention, in the vapor deposition mask manufacturing method according to any one of the twelfth to eighteenth aspects, the thickness of the metal plate may be 50 μm or less, or 30 μm or less.

[0110] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiment described below is an example of the embodiment of the present invention, and the present invention is not limited to these embodiments.

[0111] First, refer to Figure 1 The following describes a vapor deposition apparatus 90 for performing a vapor deposition process on an object. Figure 1 As shown, the evaporation device 90 may include a evaporation source 94, a heater 96, and a evaporation mask device 10 therein. Furthermore, the evaporation device 90 may further include an exhaust unit for creating a vacuum atmosphere within the evaporation device 90. The evaporation source 94 is, for example, a crucible and may contain a evaporation material 98, such as an organic light-emitting material. The heater 96 heats the crucible 94, evaporating the evaporation material 98 under a vacuum atmosphere. The evaporation mask device 10 may be disposed so as to face the evaporation source 94.

[0112] Next, the vapor deposition mask device 10 will be described. Figure 1 As shown, the vapor deposition mask device 10 may include at least one vapor deposition mask 20 and a frame 15 for supporting the vapor deposition mask 20. The frame 15 can support the vapor deposition mask 20 in a stretched state along its surface direction to suppress the vapor deposition mask 20 from being bent. Figure 1 As shown, the vapor deposition mask device 10 can be arranged in the vapor deposition device 90 so that the vapor deposition mask 20 faces the substrate to which the vapor deposition material 98 is to be attached, such as the organic EL substrate 92. The vapor deposition mask 20 can have a plurality of through holes 25 through which the vapor deposition material 98 passes from the vapor deposition source. In the following description, the surface of the vapor deposition mask 20 located on the side of the substrate such as the organic EL substrate 92 to which the vapor deposition material 98 is to be attached is referred to as the first surface 20a, and the surface located on the opposite side of the first surface 20a is referred to as the second surface 20b.

[0113] like Figure 1 As shown, the vapor deposition mask apparatus 10 can include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 is attracted toward the magnet 93 by magnetic force, thereby enabling the vapor deposition mask 20 to be closely attached to the organic EL substrate 92. This can suppress the generation of shadows during the vapor deposition process and improve the dimensional accuracy and positional accuracy of the vapor deposition material 98 attached to the organic EL substrate 92. Alternatively, an electrostatic chuck utilizing electrostatic force can be used to closely attach the vapor deposition mask 20 to the organic EL substrate 92.

[0114] Figure 3 2 is a top view showing the vapor deposition mask device 10 when viewed from the first surface 20a side of the vapor deposition mask 20. Figure 3As shown, the vapor deposition mask device 10 may include a plurality of vapor deposition masks 20. In this embodiment, each vapor deposition mask 20 may have a rectangular shape extending in one direction. In the vapor deposition mask device 10, the plurality of vapor deposition masks 20 may be arranged in a width direction intersecting the length direction of the vapor deposition mask 20. Each vapor deposition mask 20 is fixed to the frame 15 at both ends in the length direction of the vapor deposition mask 20, for example, by welding. In addition, although not shown, the vapor deposition mask device 10 may also include a component that is fixed to the frame 15 and partially overlaps with the vapor deposition mask 20 in the thickness direction of the vapor deposition mask 20. Examples of such components include: a component that extends in a direction intersecting the length direction of the vapor deposition mask 20 and supports the vapor deposition mask 20; a component that overlaps with the gap between two adjacent vapor deposition masks; and the like.

[0115] Figure 2 Is shown using Figure 1 The organic EL display device 100 is a cross-sectional view of an organic EL display device 100 manufactured by a vapor deposition device 90. The organic EL display device 100 may include an organic EL substrate 92 and a vapor deposition layer 99 including a vapor deposition material 98 arranged in a pattern. Figure 2 In the organic EL display device 100, the electrodes for applying voltage to the vapor-deposited layer 99 and the layers for promoting the movement of carriers such as holes or electrons are omitted. In addition, after the vapor-deposited layer 99 is provided in a pattern on the organic EL substrate 92, the vapor-deposited layer 99 can be formed. Figure 2 The organic EL display device 100 is further provided with other components of the organic EL display device. Figure 2 The organic EL display device 100 may also be referred to as an intermediate of an organic EL display device.

[0116] When a color display using multiple colors is desired, separate vapor deposition apparatuses 90 equipped with vapor deposition masks 20 corresponding to the respective colors can be prepared, and the organic EL substrates 92 can be sequentially placed into the respective vapor deposition apparatuses 90. In this way, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue can be sequentially vapor-deposited on the organic EL substrate 92.

[0117] The vapor deposition process is sometimes carried out inside the vapor deposition device 90, which is in a high-temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition device 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. In this case, if there is a significant difference in the thermal expansion coefficients of the vapor deposition mask 20 or the frame 15 and the organic EL substrate 92, positional deviation will occur due to the difference in their dimensional changes, resulting in a decrease in the dimensional accuracy and positional accuracy of the vapor deposition material attached to the organic EL substrate 92.

[0118] In order to solve such a problem, it is preferable that the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is a value equivalent to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the metal plate constituting the vapor deposition mask 20, an iron alloy having a total nickel and cobalt content of 30% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less can be used. Specific examples of iron alloys containing nickel or nickel and cobalt include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, a super Invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, and a low thermal expansion Fe-Ni plating alloy containing 38% by mass or more and 54% by mass or less of nickel.

[0119] It should be noted that, when the temperatures of the evaporation mask 20, the frame 15, and the organic EL substrate 92 do not reach a high temperature during the evaporation process, there is no need to make the thermal expansion coefficients of the evaporation mask 20 and the frame 15 equal to the thermal expansion coefficient of the organic EL substrate 92. In this case, materials other than the above-mentioned iron alloys can be used as the material constituting the evaporation mask 20. For example, iron alloys other than the above-mentioned iron alloys containing nickel, such as iron alloys containing chromium, can be used. As iron alloys containing chromium, for example, iron alloys called so-called stainless steel can be used. In addition, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, can also be used.

[0120] First, the edges 17a and 17b will be described in detail. The edges 17a and 17b are portions of the vapor deposition mask 20 that are fixed to the frame 15. The first edge 17a includes a first end 20e, which is one end in the longitudinal direction of the vapor deposition mask 20. The second edge 17b includes a second end 20f, which is the other end in the longitudinal direction of the vapor deposition mask 20.

[0121] In this embodiment, the edge portions 17a and 17b are integrally formed with the middle portion 18. However, the edge portions 17a and 17b may be formed of a member separate from the middle portion 18. In this case, the edge portions 17a and 17b are joined to the middle portion 18 by welding, for example.

[0122] Next, the intermediate portion 18 will be described. The intermediate portion 18 includes at least one effective region 22 in which a through hole 25 extending from the first surface 20a to the second surface 20b is formed, and a peripheral region 23 surrounding the effective region 22. The effective region 22 is the region of the vapor deposition mask 20 that faces the display region of the organic EL substrate 92.

[0123] exist Figure 3 In the example shown, the middle portion 18 includes a plurality of effective regions 22 arranged at predetermined intervals along the longitudinal direction of the vapor deposition mask 20. One effective region 22 corresponds to the display region of one organic EL display device 100. Figure 1 The vapor deposition mask apparatus 10 shown is capable of performing repeated vapor deposition (multi-surface vapor deposition) on the organic EL display device 100. It should be noted that a single active area 22 may correspond to multiple display areas. Furthermore, although not shown, multiple active areas 22 may be arranged at predetermined intervals across the width of the vapor deposition mask 20.

[0124] like Figure 3 As shown, the effective area 22 has, for example, a substantially quadrilateral shape in a plan view, more precisely, a substantially rectangular outline in a plan view. It should be noted that, although not shown, each effective area 22 may have an outline of various shapes depending on the shape of the display area of ​​the organic EL substrate 92. For example, each effective area 22 may have a circular outline.

[0125] The effective area 22 will be described in detail below. Figure 4A 2 is a plan view showing the effective area 22 of the vapor deposition mask 20 as viewed from the first surface 20a side. Figure 4B 2 is a top view showing the effective area 22 of the vapor deposition mask 20 as viewed from the second surface 20b side. Figures 5 to 7 They are Figure 4A The cross-sectional view of the effective area 22 along the VV direction to the VII-VII direction. Specifically, Figure 5 This is a cross-sectional view of the effective region 22 of the vapor deposition mask 20 cut along a straight line perpendicular to the direction in which the first portion 32a of the first end 32 described later extends and passing through the center of the first portion 32a. Figure 6 This is a cross-sectional view of the effective region 22 of the vapor deposition mask 20 cut along a straight line perpendicular to the direction in which the second portion 32b of the first end 32 described later extends and passing through the center of the second portion 32b. Figure 7 This is a cross-sectional view when the effective region 22 of the vapor deposition mask 20 is cut along a straight line passing through a connecting portion connecting the first portion 32 a and the second portion 32 b of the through-hole 25 .

[0126] When the effective area 22 is observed along the normal direction of the first surface 20a or the second surface 20b of the vapor deposition mask 20, at least a portion of the plurality of through holes 25 are arranged at a predetermined pitch along the first direction D1 and the second direction D2 that intersect each other. Figure 4A and Figure 4BIn the example shown, the plurality of through holes 25 are arranged at predetermined intervals along a first direction D1 and a second direction D2 that are orthogonal to each other. The first direction D1 may coincide with the longitudinal direction or the width direction of the deposition mask 20. The first direction D1 may also be inclined relative to the longitudinal direction or the width direction of the deposition mask 20. For example, the first direction D1 may be inclined at 45 degrees relative to the longitudinal direction of the deposition mask 20.

[0127] like Figures 5 to 7 As shown, a plurality of through holes 25 extend from the first surface 20a, which is one side along the normal direction N of the vapor deposition mask 20, to the second surface 20b, which is the other side along the normal direction N of the vapor deposition mask 20. The through holes 25 are defined by a wall 26, which includes a first end 32 located at the end of the first surface 20a and a second end 37 located at the end of the second surface 20b. The wall 26 extends from one side of the first surface 20a to the other side of the second surface 20b.

[0128] The wall surface 26 of the through hole 25 includes: a first wall surface 31 located on the side of the first surface 20a, and a second wall surface 36 located on the side of the second surface 20b. The first wall surface 31 is a surface extending from the first end 32 of the through hole 25 toward the second surface 20b. The second wall surface 36 is a surface extending from the connecting portion 41 toward the second surface 20b. The second wall surface 36 is connected to the first wall surface 31 via the connecting portion 41. As described later, the vapor deposition mask 20 is composed of a metal plate 51. The first wall surface 31 is a surface of the first recess 30 formed when the metal plate 51 is etched from the first surface 51a. In addition, the second wall surface 36 is a surface of the second recess 35 formed when the metal plate 51 is etched from the second surface 51b. In addition, the connecting portion 41 is a portion connecting the first recess 30 and the second recess 35.

[0129] At the connection portion 41, the direction in which the wall surface of the through-hole 25 extends changes. For example, the direction in which the wall surface extends changes discontinuously. The angle δ formed between the direction in which the first wall surface 31 extends at the connection portion 41 and the direction in which the second wall surface 36 extends at the connection portion 41 is, for example, greater than 100 degrees.

[0130] like Figures 5 to 7 As shown, the opening area of ​​each second recess 35 in the cross section of the vapor deposition mask 20 along the plate surface at each position along the normal direction N of the vapor deposition mask 20 gradually decreases from the second surface 20b side of the vapor deposition mask 20 toward the first surface 20a side. Similarly, the opening area of ​​each first recess 30 in the cross section of the vapor deposition mask 20 along the plate surface at each position along the normal direction N of the vapor deposition mask 20 may also gradually decrease from the first surface 20a side of the vapor deposition mask 20 toward the second surface 20b side.

[0131] The first wall surface 31 of the first recess 30 and the second wall surface 36 of the second recess 35 are connected by a circumferential connecting portion 41. The connecting portion 41 is defined by the ridge line of the portion where the first wall surface 31 and the second wall surface 36 merge. The portion where the first wall surface 31 and the second wall surface 36 merge may also protrude toward the center side of the through hole 25. At the connecting portion 41, the first wall surface 31 may be inclined relative to the normal direction N of the vapor deposition mask 20. At the connecting portion 41, the second wall surface 36 may be inclined relative to the normal direction N of the vapor deposition mask 20. In this embodiment, at the connecting portion 41, the opening area of ​​the through hole 25 when viewed from above is minimized. It should be noted that, although not shown in the figure, the opening area of ​​the through hole 25 may also be minimized at a position in the thickness direction of the vapor deposition mask 20 other than the connecting portion 41.

[0132] like Figures 5 to 7 As shown, on the first surface 20a of the vapor deposition mask 20, two adjacent through-holes 25 are spaced apart along the plane direction of the first surface 20a of the vapor deposition mask 20. Such through-holes 25 can be formed by etching the metal plate 51 so that the first surface 51a of the metal plate 51 remains between the two adjacent first recesses 30, as described in the manufacturing method below. The first surface 51a of the metal plate 51 corresponds to the first surface 20a of the vapor deposition mask 20.

[0133] On the second surface 20b side of the vapor deposition mask 20, two adjacent through holes 25 may be connected, or two adjacent through holes 25 may be separated along the surface direction of the second surface 20b. Figure 5 and Figure 6 In the cross-sectional view shown in FIG, the second recesses 35 of two adjacent through holes 25 are connected. That is, the second surface 51b of the metal plate 51 constituting the vapor deposition mask 20 does not remain between the two adjacent second recesses 35. Figure 7 In the cross-sectional view shown, two adjacent through-holes 25 are spaced apart along the plane direction of the second surface 20b. That is, the second surface 51b of the metal plate 51 remains between the two adjacent second recesses 35. In the following description, the portion of the metal plate 51 located in the effective area 22 where the second surface 51b remains unetched is also referred to as the top 43.

[0134] The vapor deposition mask 20 can be made to have sufficient strength by forming the vapor deposition mask 20 so as to leave the top portion 43. This can prevent the vapor deposition mask 20 from being damaged during transportation, for example.

[0135] Incidentally, in the vapor deposition process using the vapor deposition mask 20, the vapor deposition material 98 adheres to the organic EL substrate 92 through the second recess 35 whose opening area gradually decreases. A portion of the vapor deposition material 98 moves from the crucible 94 toward the organic EL substrate 92 along the normal direction N of the organic EL substrate 92. Figure 5As shown by the arrow from the second surface 20b toward the first surface 20a in FIG, another portion of the vapor deposition material 98 may also move in a direction oblique to the normal direction N of the organic EL substrate 92. A portion of the vapor deposition material 98 that has moved in the oblique direction reaches and adheres to the second wall surface 36 of the second recess 35 before passing through the through-hole 25 and reaching the organic EL substrate 92. The higher the proportion of the vapor deposition material 98 that adheres to the second wall surface 36 of the second recess 35, the lower the utilization efficiency of the vapor deposition material 98 in the vapor deposition process.

[0136] Figure 5 In FIG. 4 , the minimum angle formed by a straight line K passing through the connecting portion 41 and any position of the second wall surface 36 of the second recess 35 with respect to the normal direction N of the vapor deposition mask 20 is represented by symbol θ1. In order to prevent the vapor deposition material 98, which has tilted and moved, from adhering to the second wall surface 36, the angle θ1 is preferably large. The angle θ1 is, for example, 30 degrees or greater, and more preferably 45 degrees or greater.

[0137] In order to increase the angle θ1 , it is effective to reduce the width β of the top portion 43 . Figure 7 The width β of the top portion 43 shown is, for example, 10 μm or less, and may be 5 μm or less.

[0138] Although not shown in the figure, you can also follow the Figure 7 The vapor deposition mask 20 may be formed in such a manner that no top portion 43 remains in the cross-sectional view. Figure 5 and Figure 6 The vapor deposition mask 20 is constructed in such a way that the top 43 remains in the cross-sectional view.

[0139] In addition, in order to increase the angle θ1, it is also effective to reduce the thickness T of the vapor deposition mask 20. The thickness T of the vapor deposition mask 20 is preferably set to 50 μm or less, for example, 5 μm or more and 50 μm or less. The thickness T of the vapor deposition mask 20 can be 30 μm or less, 25 μm or less, 20 μm or less, 18 μm or less, 15 μm or less, or 13 μm or less. By reducing the thickness T of the vapor deposition mask 20, it is possible to prevent the vapor deposition material 98 from colliding with the first wall 31 of the first recess 30 and the second wall 36 of the second recess 35 during the vapor deposition process. In addition, the thickness T of the vapor deposition mask 20 can be 2 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. It should be noted that the thickness T of the vapor deposition mask 20 is the thickness of the surrounding area 23. That is, the thickness T of the deposition mask 20 is the thickness of the portion of the deposition mask 20 where the first recesses 30 and the second recesses 35 are not formed. Therefore, the thickness T of the deposition mask 20 can also be considered the thickness of the metal plate 51 of the deposition mask 20 .

[0140] The range of the thickness T of the vapor deposition mask 20 can be determined by a combination of any one of the plurality of upper limit candidate values ​​and any one of the plurality of lower limit candidate values, for example, it can be 2 μm or more and 50 μm or less, 5 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, or 15 μm or more and 20 μm or less. In addition, the range of the thickness T of the vapor deposition mask 20 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 2 μm or more and 15 μm or less, 2 μm or more and 10 μm or less, 5 μm or more and 15 μm or less, or 5 μm or more and 10 μm or less. In addition, the range of the thickness T of the vapor deposition mask 20 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, 25 μm or more and 50 μm or less, or 25 μm or more and 30 μm or less.

[0141] Incidentally, even when the vapor deposition mask 20 is constructed so that the angle θ1 is sufficiently large, the vapor deposition material 98 will have difficulty adhering to the organic EL substrate 92 near the first end 32 of the through hole 25 due to the shadow. Therefore, the thickness of the vapor deposition layer 99 composed of the vapor deposition material 98 adhering to the organic EL substrate 92 will vary. For example, when observed along the normal direction of the first surface 20a of the vapor deposition mask 20, the thickness of the vapor deposition layer 99 near the first end 32 of the through hole 25 will be smaller than the thickness of the vapor deposition layer 99 located in the center of the through hole 25. Figures 8 to 10 , and explain in detail this issue and the means to solve it.

[0142] Figure 8 It is a plan view showing the outline of the first ends 32 of the plurality of through holes 25 of the vapor deposition mask 20 . Figure 8 In FIG. 1 , a vapor deposition layer 99 formed on the organic EL substrate 92 incorporated in the vapor deposition mask 20 is hypothetically depicted by a dotted line.

[0143] In the evaporation mask 20 of this embodiment, as Figure 8 As shown, the first end 32 of the through hole 25 includes a pair of first portions 32a extending along the first direction D1 and a pair of second portions 32b extending along the second direction D2. Figure 8 As shown, the first portion 32a has a first dimension L1, and the second portion 32b has a second dimension L2. The first dimension L1 is the dimension of the first portion 32a in the first direction D1. The second dimension L2 is the dimension of the second portion 32b in the second direction D2. Figure 8 As shown, the second dimension L2 is shorter than the first dimension L1. Figure 8In the example shown, the first direction D1 is perpendicular to the second direction D2. Figure 8 The outline of the first end 32 shown is a rectangle having the first portion 32 a as the long side and the second portion 32 b as the short side.

[0144] The difference between the first dimension L1 of the first portion 32a of the first end 32 and the second dimension L2 of the second portion 32b of the first end 32 is, for example, 2 μm or more, 4 μm or more, 6 μm or more, or 8 μm or more. Furthermore, the difference between the first dimension L1 of the first portion 32a of the first end 32 and the second dimension L2 of the second portion 32b of the first end 32 is, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 100 μm or less.

[0145] The range of the difference between the first dimension L1 and the second dimension L2 can be determined by a combination of any one of the plurality of candidate upper limit values ​​and any one of the plurality of candidate lower limit values. For example, it can be 2 μm to 300 μm, 4 μm to 200 μm, 6 μm to 150 μm, or 8 μm to 100 μm. Furthermore, the range of the difference between the first dimension L1 and the second dimension L2 can also be determined by a combination of any two of the plurality of candidate lower limit values. For example, it can be 2 μm to 8 μm, 2 μm to 6 μm, 4 μm to 8 μm, or 4 μm to 6 μm. In addition, the range of the difference between the first dimension L1 and the second dimension L2 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values. For example, it can be greater than 100 μm and less than 300 μm, greater than 100 μm and less than 200 μm, greater than 150 μm and less than 300 μm, or greater than 150 μm and less than 200 μm.

[0146] The first dimension L1 of the first portion 32a of the first end 32 is, for example, 17 μm or greater, 22 μm or greater, 27 μm or greater, or 32 μm or greater. Furthermore, the first dimension L1 of the first portion 32a of the first end 32 is, for example, 350 μm or less, 300 μm or less, 250 μm or less, or 200 μm or less. The second dimension L2 of the second portion 32b of the first end 32 is, for example, 15 μm or greater, 20 μm or greater, 25 μm or greater, or 30 μm or greater. Furthermore, the second dimension L2 of the second portion 32b of the first end 32 is, for example, 150 μm or less, 130 μm or less, 110 μm or less, or 100 μm or less.

[0147] The range of the first dimension L1 of the first portion 32a of the first end 32 can be determined by a combination of any one of the plurality of candidate upper limit values ​​and any one of the plurality of candidate lower limit values. For example, the range may be 17 μm to 350 μm, 22 μm to 300 μm, 27 μm to 250 μm, or 32 μm to 200 μm. Furthermore, the range of the first dimension L1 of the first portion 32a of the first end 32 can also be determined by a combination of any two of the plurality of candidate lower limit values. For example, the range may be 17 μm to 32 μm, 17 μm to 27 μm, 22 μm to 32 μm, or 22 μm to 27 μm. In addition, the range of the first dimension L1 of the first part 32a of the first end 32 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be greater than 200 μm and less than 350 μm, it can be greater than 200 μm and less than 300 μm, it can be greater than 250 μm and less than 350 μm, or it can be greater than 250 μm and less than 300 μm.

[0148] The range of the second dimension L2 of the second portion 32b of the first end 32 can be determined by a combination of any one of the plurality of candidate upper limit values ​​and any one of the plurality of candidate lower limit values. For example, the range may be 15 μm to 150 μm, 20 μm to 130 μm, 25 μm to 110 μm, or 30 μm to 100 μm. Furthermore, the range of the second dimension L2 of the second portion 32b of the first end 32 can also be determined by a combination of any two of the plurality of candidate lower limit values. For example, the range may be 15 μm to 30 μm, 15 μm to 25 μm, 20 μm to 30 μm, or 20 μm to 25 μm. In addition, the range of the second dimension L2 of the second part 32b of the first end 32 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be greater than 100 μm and less than 150 μm, it can be greater than 100 μm and less than 130 μm, it can be greater than 110 μm and less than 150 μm, or it can be greater than 110 μm and less than 130 μm.

[0149] Figure 8In the figure, symbol C1 represents the distance between the first ends 32 of two through-holes 25 adjacent in a direction perpendicular to the first direction D1, with the first portions 32a facing each other. Distance C1 is also referred to as the first distance. Symbol C2 represents the distance between the first ends 32 of two through-holes 25 adjacent in a direction perpendicular to the second direction D2, with the second portions 32b facing each other. Distance C2 is also referred to as the second distance C2. The first distance C1 may be greater than the second distance C2. The difference between the first distance C1 and the second distance C2 may be, for example, 0 μm or greater, 2 μm or greater, 5 μm or greater, 10 μm or greater, or 15 μm or greater. Furthermore, the difference between the first distance C1 and the second distance C2 may be, for example, 260 μm or less, 200 μm or less, 150 μm or less, 100 μm or less, 50 μm or less, 30 μm or less, or 20 μm or less.

[0150] The range of the difference between the first interval C1 and the second interval C2 can be determined by a combination of any one of the plurality of candidate upper limit values ​​and any one of the plurality of candidate lower limit values. For example, the range may be 0 μm to 260 μm, 2 μm to 200 μm, 5 μm to 200 μm, 10 μm to 150 μm, 15 μm to 100 μm, 15 μm to 50 μm, 15 μm to 30 μm, or 15 μm to 20 μm. Furthermore, the range of the difference between the first interval C1 and the second interval C2 can also be determined by a combination of any two of the plurality of candidate lower limit values. For example, the range may be 0 μm to 15 μm, 0 μm to 10 μm, 2 μm to 15 μm, 2 μm to 10 μm, 5 μm to 15 μm, or 5 μm to 10 μm. In addition, the range of the difference between the first interval C1 and the second interval C2 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values. For example, it can be greater than 20 μm and less than 250 μm, greater than 30 μm and less than 250 μm, greater than 50 μm and less than 250 μm, greater than 100 μm and less than 250 μm, greater than 100 μm and less than 200 μm, greater than 150 μm and less than 260 μm, or greater than 150 μm and less than 200 μm.

[0151] The first interval C1 may be, for example, 30 μm or greater, 35 μm or greater, 40 μm or greater, or 45 μm or greater. Furthermore, the first interval C1 may be, for example, 350 μm or less, 300 μm or less, 250 μm or less, or 200 μm or less. The second interval C2 may be, for example, 15 μm or greater, 20 μm or greater, 25 μm or greater, or 30 μm or greater. Furthermore, the second interval C2 may be, for example, 150 μm or less, 130 μm or less, 110 μm or less, or 100 μm or less.

[0152] The range of the first interval C1 can be determined by a combination of any one of the plurality of candidate upper limit values ​​and any one of the plurality of candidate lower limit values. For example, the range may be 30 μm to 350 μm, 35 μm to 300 μm, 40 μm to 250 μm, or 45 μm to 200 μm. Furthermore, the range of the first interval C1 can be determined by a combination of any two of the plurality of candidate lower limit values. For example, the range may be 30 μm to 45 μm, 30 μm to 40 μm, 35 μm to 45 μm, or 35 μm to 40 μm. In addition, the range of the first interval C1 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be greater than 200μm and less than 350μm, greater than 200μm and less than 300μm, greater than 250μm and less than 350μm, or greater than 250μm and less than 300μm.

[0153] The range of the second interval C2 can be determined by a combination of any one of the plurality of candidate upper limit values ​​and any one of the plurality of candidate lower limit values. For example, the range may be 15 μm to 150 μm, 20 μm to 130 μm, 25 μm to 110 μm, or 30 μm to 100 μm. Furthermore, the range of the second interval C2 can also be determined by a combination of any two of the plurality of candidate lower limit values. For example, the range may be 15 μm to 30 μm, 15 μm to 25 μm, 20 μm to 30 μm, or 20 μm to 25 μm. In addition, the range of the second interval C2 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be greater than 100 μm and less than 150 μm, greater than 100 μm and less than 130 μm, greater than 110 μm and less than 150 μm, or greater than 110 μm and less than 130 μm.

[0154] like Figure 8As shown, the first end 32 may include a connecting portion 32r connecting the first portion 32a and the second portion 32b. The connecting portion 32r may extend in a direction different from the first direction D1 and the second direction D2. Figure 8 In the example shown, the connecting portion 32r has a curved shape. When the first end 32 includes the connecting portion 32r, the dimensions of the first portion 32a and the second portion 32b are calculated based on the dimensions of the sides of the polygon circumscribing the first end 32. For example, the first dimension L1 of the first portion 32a is the length of the sides extending in the first direction D1 of a quadrilateral 32p circumscribing the first end 32, which includes a pair of sides extending in the first direction D1 and a pair of sides extending in the second direction D2. Furthermore, the second dimension L2 of the second portion 32b is the length of the sides extending in the second direction D2 of the quadrilateral 32p circumscribing the first end 32.

[0155] Figure 8 In the figure, symbol L3 represents the dimension of the vapor-deposited layer 99 in the first direction D1, and symbol L4 represents the dimension of the vapor-deposited layer 99 in the second direction D2. Near the first end 32, the deposition material 98 is hindered from adhering to the organic EL substrate 92 due to shadows, so the outline of the vapor-deposited layer 99 may be smaller than the outline of the first end 32. For example, the dimension L3 of the vapor-deposited layer 99 in the first direction D1 may be smaller than the first dimension L1 of the first end 32 of the through-hole 25 of the vapor deposition mask 20. Similarly, the dimension L4 of the vapor-deposited layer 99 in the second direction D2 may be smaller than the second dimension L2 of the first end 32 of the through-hole 25 of the vapor deposition mask 20. It should be noted that, although not shown in the figure, the outline of the vapor-deposited layer 99 may be the same as the outline of the first end 32, or it may be larger than the outline of the first end 32.

[0156] Figure 9 and Figure 10 They are Figure 8 The cross-sectional view of the effective area 22 along the IX-IX direction and the XX direction. Specifically, Figure 9 This is a cross-sectional view of the effective region 22 of the vapor deposition mask 20 cut along a straight line perpendicular to the first direction D1 extending from the first portion 32a of the first end 32 and passing through the center portion 32ac of the first portion 32a. Figure 10 This is a cross-sectional view of the effective region 22 of the vapor deposition mask 20 cut along a straight line perpendicular to the second direction D2 in which the second portion 32 b of the first end 32 extends and passing through the center portion 32 bc of the second portion 32 b .

[0157] exist Figure 9 and Figure 10 , an example of a vapor deposition layer 99 formed on an organic EL substrate 92 combined with a vapor deposition mask 20 is shown. Figure 9 and Figure 10In the figure, symbol E1 represents the thickness of a central portion 99c of the vapor-deposited layer 99 formed on the organic EL substrate 92, which overlaps with the center of the through-hole 25 when viewed along the normal direction of the first surface 20a of the vapor deposition mask 20. The thickness of the portion of the vapor-deposited layer 99 located near the first end 32 of the through-hole 25 is smaller than the thickness E1 of the central portion 99c due to the shadow.

[0158] In order for the vapor-deposited layer 99 to perform its desired function, it is preferably of a desired thickness. For example, when the vapor-deposited layer 99 is a light-emitting layer that radiates light, the portion of the vapor-deposited layer 99 having a thickness greater than or equal to the desired thickness E2 can radiate light when an operating voltage is applied. In other words, the portion of the vapor-deposited layer 99 having a thickness less than E2 cannot radiate light when an operating voltage is applied. In the following description, the portion of the vapor-deposited layer 99 having a thickness E2 that is closest to the first end 32 is also referred to as the effective edge portion 99e. In addition, the area of ​​the portion of the vapor-deposited layer 99 surrounded by the effective edge portion 99e is also referred to as the effective area.

[0159] As the pixel density of display devices such as organic EL displays increases, the area allocated to each pixel decreases, and the area of ​​each through-hole 25 in the evaporation mask 20 also decreases. Furthermore, the luminosity of light emitted from the light-emitting layer of each pixel also decreases. In this case, increasing the voltage applied to the light-emitting layer is considered a method for increasing the luminosity of light. However, increasing the voltage increases the heat release and reduces the reliability of the light-emitting layer. For example, the lifespan of the light-emitting layer is shortened.

[0160] To increase the luminosity of light emitted from a single light-emitting layer under the condition that the area of ​​the through-hole 25 is limited, it is preferable to increase the area of ​​the electrode that applies a voltage to the vapor-deposited layer 99. To increase the area of ​​the electrode, it is preferable to increase the effective area of ​​the vapor-deposited layer 99 formed inside the first end 32 of the through-hole 25. As a means of increasing the effective area of ​​the vapor-deposited layer 99, reducing the height of the wall 26 of the through-hole 25 to suppress the generation of shadows is a possible approach. However, if the height of the wall 26 is excessively reduced, the strength of the vapor deposition mask 20 is reduced, and the vapor deposition mask 20 is more likely to be damaged or deformed.

[0161] In consideration of this problem, in this embodiment, it is proposed to make the height H1 of the first wall surface section 31a smaller than the height H2 of the second wall surface section 31b. Figure 9 As shown, the first wall surface section 31a is a portion of the first wall surface 31 of the wall surface 26 of the through hole 25 that is connected to the first portion 32a of the first end 32. The first wall surface section 31a extends from the first portion 32a to the connecting portion 41. Figure 10As shown, the second wall section 31b is a portion of the first wall 31 that is connected to the second portion 32b of the first end 32. The second wall section 31b extends from the second portion 32b toward the connection portion 41. By making the height H1 of the first wall section 31a smaller than the height H2 of the second wall section 31b, the thickness of the vapor-deposited layer 99 near the first portion 32a of the first end 32 can be made greater than the thickness of the vapor-deposited layer 99 near the second portion 32b. Therefore, as shown in FIG. Figure 9 and Figure 10 As shown, the distance K1 in the surface direction of the vapor deposition mask 20 from the first part 32a of the first end 32 to the effective edge portion 99e of the vapor deposition layer 99 can be made smaller than the distance K2 in the surface direction of the vapor deposition mask 20 from the second part 32b of the first end 32 to the effective edge portion 99e of the vapor deposition layer 99.

[0162] In this embodiment, the first dimension L1 of the first portion 32a of the through-hole 25 of the deposition mask 20 at the first end 32 is larger than the second dimension L2 of the second portion 32b. Therefore, the dimension L3 of the side of the deposited layer 99 extending along the first portion 32a is also larger than the dimension L4 of the side of the deposited layer 99 extending along the second portion 32b. Here, it is assumed that by reducing the height of the first wall 31 of the through-hole 25 to suppress shadowing, the spacing K between the effective edge 99e of the deposited layer 99 and the first end 32 can be reduced by ΔK. If the spacing K is reduced along the side of the deposited layer 99 extending along the first portion 32a, the effective area of ​​the deposited layer 99 increases by ΔK × L3 × 2. On the other hand, if the spacing K is reduced along the side of the deposited layer 99 extending along the second portion 32b, the effective area of ​​the deposited layer 99 increases by ΔK × L4 × 2. As described above, in this embodiment, dimension L3 is larger than dimension L4. Therefore, in order to increase the effective area of ​​the vapor-deposited layer 99 , it is advantageous to reduce the spacing distance K of the sides extending along the first portion 32 a in the vapor-deposited layer 99 .

[0163] In this embodiment, the height H1 of the first wall section 31a is smaller than the height H2 of the second wall section 31b. Therefore, compared to a case where the heights H1 and H2 are equal, the distance K1 from the first portion 32a of the first end 32 to the effective edge 99e of the vapor-deposited layer 99 can be further reduced. Consequently, the effective area of ​​the vapor-deposited layer 99 can be effectively increased. Furthermore, by making the height H2 greater than the height H1, the portion of the second portion 32b of the vapor deposition mask 20 along the first end 32 can be utilized to ensure the strength of the vapor deposition mask 20. This increases the effective area of ​​the vapor deposition layer 99 while suppressing damage, deformation, and the like to the vapor deposition mask 20.

[0164] The difference between height H1 and height H2 is, for example, 1 μm or more, 1.5 μm or more, 2 μm or more, or 2.5 μm or more. Furthermore, the difference between height H1 and height H2 is, for example, 10 μm or less, 8 μm or less, 6 μm or less, or 4 μm or less.

[0165] The range of the difference between height H1 and height H2 can be determined by a combination of any one of the plurality of upper limit candidate values ​​and any one of the plurality of lower limit candidate values, for example, it can be 1 μm or more and 10 μm or less, 1.5 μm or more and 8 μm or less, 2 μm or more and 6 μm or less, or 2.5 μm or more and 4 μm or less. In addition, the range of the difference between height H1 and height H2 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 1 μm or more and 2.5 μm or less, 1 μm or more and 2 μm or less, 1.5 μm or more and 2 μm or less. In addition, the range of the difference between height H1 and height H2 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 4 μm or more and 10 μm or less, 4 μm or more and 8 μm or less, 6 μm or more and 10 μm or less, or 6 μm or more and 8 μm or less.

[0166] Height H1 may be, for example, 0 μm or greater, 0.5 μm or greater, 1 μm or greater, or 1.5 μm or greater. Furthermore, height H1 may be, for example, 5 μm or less, 4 μm or less, 3.5 μm or less, or 3 μm or less. Height H2 may be, for example, 1 μm or greater, 1.5 μm or greater, 2 μm or greater, or 2.5 μm or greater. Furthermore, height H2 may be, for example, 10 μm or less, 8 μm or less, 6 μm or greater, or 5 μm or greater.

[0167] The range of height H1 can be determined by a combination of any one of the candidate values ​​for the upper limit and any one of the candidate values ​​for the lower limit. For example, it can be 0 μm to 5 μm, 0.5 μm to 4 μm, 1 μm to 3.5 μm, or 1.5 μm to 3 μm. In addition, the range of height H1 can be determined by a combination of any two of the candidate values ​​for the lower limit. For example, it can be 0 μm to 1.5 μm, 0 μm to 1 μm, 0.5 μm to 1.5 μm, or 0.5 μm to 1 μm. In addition, the range of height H1 can be determined by a combination of any two of the candidate values ​​for the upper limit. For example, it can be 3 μm to 5 μm, 3 μm to 4 μm, 3.5 μm to 5 μm, or 3.5 μm to 4 μm.

[0168] The range of height H2 can be determined by a combination of any one of the candidate values ​​for the upper limit and any one of the candidate values ​​for the lower limit. For example, it can be 1 μm or more and 10 μm or less, 1.5 μm or more and 8 μm or less, 2 μm or more and 6 μm or less, or 2.5 μm or more and 5 μm or less. In addition, the range of height H2 can also be determined by a combination of any two of the candidate values ​​for the lower limit. For example, it can be 1 μm or more and 2.5 μm or less, 1 μm or more and 2 μm or less, 1.5 μm or more and 2.5 μm or less, or 1.5 μm or more and 2 μm or less. In addition, the range of height H2 can also be determined by a combination of any two of the candidate values ​​for the upper limit. For example, it can be 5 μm or more and 10 μm or less, 5 μm or more and 8 μm or less, 6 μm or more and 10 μm or less, or 6 μm or more and 8 μm or less.

[0169] The following describes the method for measuring the heights H1 and H2. Figure 11 As shown in FIG, the case where multiple effective areas 22 are arranged along the longitudinal direction of the vapor deposition mask 20 will be described. First, samples 20s for measuring heights H1 and H2 are collected at multiple inspection locations P of the effective area 22 of the vapor deposition mask 20. For example, Figure 11As shown, the first sample and the second sample are collected from the multiple inspection locations P of the effective area 22 located closest to the first end 20e among the multiple effective areas 22 arranged in the longitudinal direction of the vapor deposition mask 20. The first sample is a sample for measuring the height H1. The second sample is a sample for measuring the height H2. In addition, the first sample and the second sample are collected from the multiple inspection locations P of the effective area 22 located closest to the second end 20f among the multiple effective areas 22 arranged in the longitudinal direction of the vapor deposition mask 20. In addition, the first sample and the second sample are collected from the multiple inspection locations P of the effective area 22 located between the effective area 22 located closest to the first end 20e and the effective area 22 located closest to the second end 20f. It should be noted that when an even number of active areas 22 are arranged in the longitudinal direction of the vapor deposition mask 20, the first sample and the second sample are collected at the multiple inspection locations P of one of the two active areas 22, namely, the active area 22 located closest to the first end 20e and the active area 22 located closest to the second end 20f. When the active area 22 is a polygon such as a quadrilateral, the multiple inspection locations P in one active area 22 are set, for example, near the corners of the polygonal active area 22 and in the center of the effective area 22.

[0170] Figure 12 3 is a side view showing the first wall surface 31 and the second wall surface 36 of the first sample 20s for measuring the height H1. Figure 4A As shown, Figure 12 The first sample 20s is obtained by cutting the vapor deposition mask 20 through a cutting line passing through a pair of second portions 32b. Figure 4A As shown, Figure 12 The side view is obtained by observing the first wall surface section 31a of the first sample 20s along the direction of arrow A using a scanning electron microscope. The height H1 of the first wall surface 31 in the first sample 20s is the height of the first wall surface 31 at the center portion 32ac of the first portion 32a of the first end 32. A FlexSEM1000 manufactured by Hitachi High-Technologies Corporation can be used as a scanning electron microscope for observing the first wall surface 31 of the first sample 20s. The magnification for observation is 5,000x.

[0171] In the observation process using a scanning electron microscope, first, the first sample 20s is placed on the surface of the sample stage. At this time, when observed along the normal direction of the surface of the sample stage, the first sample 20s is placed in a manner so that the first wall surface 31 and the second wall surface 36 of the first sample 20s can be confirmed. Next, the first sample 20s is observed using a scanning electron microscope. In addition, during the observation, the angle of the scanning electron microscope relative to the first sample 20s is adjusted so that the first surface 20a and the second surface 20b of the first sample 20s cannot be confirmed. In addition, the position of the central portion 32ac of the first part 32a in the first sample 20s is determined. In addition, the first sample 20s is observed at 5,000 times, and the height H1 of the first wall surface 31 is measured using the dimensional measurement function of the scanning electron microscope, that is, the so-called length measurement.

[0172] The height H1 of the first wall section 31a of the first wall surface 31 was measured for the plurality of first samples 20s using the above method. Next, the average value of the height H1 of the first wall section 31a of the first wall surface 31 in the plurality of first samples 20s was calculated. This average value was used as the height H1 of the first wall section 31a.

[0173] The height H2 of the second wall section 31b is calculated using the same method as the height H1. Figure 4A As shown, the second sample was obtained by cutting the deposition mask 20 along a cutting line passing through the pair of first portions 32a. The height H2 was measured by observing the second wall surface section 31b of the second portion 32b of the second sample with a microscope in the direction of arrow B. Furthermore, the average value of the height H2 of the first wall surface 31 was calculated for the plurality of samples.

[0174] Figure 9 In FIG. 3 , the symbol H11 represents the height of the entire wall surface of the through hole 25 that is connected to the central portion 32ac of the first portion 32a of the first end 32. The height H11 is also referred to as the first height. The first height H11 is the height of the wall surface of the through hole 25 at a cross section of the vapor deposition mask 20 that includes the central portion 32ac of the first portion 32a and is orthogonal to the first direction D1. Figure 10In the figure, the symbol H12 represents the height of the entire wall surface of the through hole 25, which is connected to the central portion 32bc of the second portion 32b of the first end 32. The height H12 is also referred to as the second height. The second height H12 is the height of the wall surface of the through hole 25 at the cross section of the vapor deposition mask 20 that includes the central portion 32bc of the second portion 32b and is perpendicular to the second direction D2. Preferably, both the height H11 and the height H12 are smaller than the thickness T of the vapor deposition mask 20. The height H11 and the height H12 are, for example, less than 1×T, less than 0.9×T, less than 0.8×T, or less than 0.7×T. In addition, the height H11 and the height H12 are, for example, greater than or equal to 0.3×T, greater than or equal to 0.4×T, greater than or equal to 0.5×T, or greater than or equal to 0.6×T.

[0175] The ranges of height H11 and height H12 can be determined by a combination of any one of the plurality of candidate values ​​for the upper limit and any one of the plurality of candidate values ​​for the lower limit. For example, the ranges may be 0.3×T or higher and 1×T or lower, 0.4×T or higher and 0.9×T or lower, 0.5×T or higher and 0.8×T or lower, or 0.6×T or higher and 0.7×T or lower. Furthermore, the ranges of height H11 and height H12 can also be determined by a combination of any two of the plurality of candidate values ​​for the lower limit. For example, the ranges may be 0.3×T or higher and 0.6×T or lower, 0.3×T or higher and 0.5×T or lower, 0.4×T or higher and 0.6×T or lower, or 0.4×T or higher and 0.5×T or lower. In addition, the range of height H11 and height H12 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be greater than 0.7×T and less than 1×T, it can be greater than 0.7×T and less than 0.9×T, it can be greater than 0.8×T and less than 1×T, or it can be greater than 0.8×T and less than 0.9×T.

[0176] Reference Figure 13 and Figure 14 , an example of an organic EL display device 100 including a vapor-deposited layer having sides of different lengths will be described. Figure 13 This is a plan view of the organic EL display device 100 as viewed from the vapor-deposition layer side.

[0177] The organic EL display device 100 includes a first vapor deposition layer 99A that radiates light of a first color, a second vapor deposition layer 99B that radiates light of a second color, and a third vapor deposition layer 99C that radiates light of a third color. Figure 13The first vapor deposition layer 99A shown is a vapor deposition layer including sides of different lengths formed by the vapor deposition mask 20 of this embodiment. Between the long sides of two adjacent first vapor deposition layers 99A in a direction perpendicular to the first direction D1, there is a second vapor deposition layer 99B or a third vapor deposition layer 99C. On the other hand, between the short sides of two adjacent first vapor deposition layers 99A in a direction perpendicular to the second direction D2, neither the second vapor deposition layer 99B nor the third vapor deposition layer 99C exists. Therefore, the interval C3 between the long sides of the two first vapor deposition layers 99A is greater than the interval C4 between the short sides of the two first vapor deposition layers 99A. It should be noted that, in Figure 13 , portions of the vapor-deposited layers 99A, 99B, and 99C that overlap with the electrodes are shown.

[0178] The first color, the second color, and the third color are, for example, blue, green, and red, respectively. The organic material constituting the vapor-deposited layer that radiates blue light has a shorter lifespan than the organic materials for green and red. Therefore, when the area of ​​the vapor-deposited layer and the voltage applied to the vapor-deposited layer are the same, the organic material for blue degrades first. Considering this problem, as Figure 13 As shown in FIG. 1 , it is preferable that the area of ​​the first vapor deposition layer 99A radiating blue light is larger than the area of ​​the second vapor deposition layer 99B for green and the area of ​​the third vapor deposition layer 99C for red. Figure 13 In the illustrated example, the length of one pair of sides of the first vapor deposition layer 99A that radiates blue light is made longer than the length of the other pair of sides, thereby increasing the area of ​​the first vapor deposition layer 99A.

[0179] Figure 14 It is along Figure 13 The cross-sectional view of the XIV-XIV line. Figure 14 As shown, a pixel divided layer (PDL) 95 may be provided between the adjacent first vapor-deposited layer 99A and second vapor-deposited layer 99B. The pixel divided layer 95 is a layer that defines the shape of the electrode 97 that functions in each pixel. The width G1 of the pixel divided layer 95 is determined based on manufacturing tolerances such as the position and shape of the through-holes 25 in the vapor deposition mask 20.

[0180] Next, the main reference Figures 15 to 20 , a method for manufacturing the vapor deposition mask 20 by processing the metal plate 51 will be described. Figure 15 1 is a diagram showing a manufacturing apparatus 70 for manufacturing a vapor deposition mask 20 using a metal plate 51. First, a roll 50 including a metal plate 51 wound on a shaft 52 is prepared. Next, the metal plate 51 of the roll 50 is unwound from the shaft 52, and the metal plate 51 is sequentially conveyed to the Figure 15 The resist film forming device 71, the exposure and development device 72, the etching device 73, the film stripping device 74 and the separation device 75 are shown. Figure 15 , an example of moving the metal plate 51 between devices by conveying it in its longitudinal direction F1 is shown, but the present invention is not limited to this. For example, the metal plate 51 provided with a resist film in the resist film forming device 71 may be rewound onto the shaft member 52, and the metal plate 51 in a wound state may be supplied to the exposure and development device 72. Alternatively, the metal plate 51 provided with a resist film that has been exposed and developed in the exposure and development device 72 may be rewound onto the shaft member 52, and the metal plate 51 in a wound state may be supplied to the etching device 73. Alternatively, the metal plate 51 etched in the etching device 73 may be rewound onto the shaft member 52, and the metal plate 51 in a wound state may be supplied to the film stripping device 74. Alternatively, the metal plate 51 from which the resin 54, etc., described later, has been removed in the film stripping device 74 may be rewound onto the shaft member 52, and the metal plate 51 in a wound state may be supplied to the separation device 75.

[0181] The resist film forming device 71 forms a resist film on the surface of the metal plate 51. The exposure and development device 72 performs exposure processing and development processing on the resist film to pattern the resist film and form a resist pattern.

[0182] The etching device 73 etches the metal plate 51 using the resist pattern as a mask, thereby forming through-holes 25 in the metal plate 51. It should be noted that, in this embodiment, a plurality of through-holes 25 corresponding to a plurality of vapor deposition masks 20 are formed in the metal plate 51. In other words, a plurality of vapor deposition masks 20 are distributed on the metal plate 51. For example, a large number of through-holes 25 are formed in the metal plate 51 by arranging a plurality of effective areas 22 in the width direction F2 of the metal plate 51 and arranging a plurality of effective areas 22 for the vapor deposition masks 20 in the length direction F1 of the metal plate 51. The film stripping device 74 strips away components such as the resist pattern or the resin 54 described later, which are provided to protect the unetched portion of the metal plate 51 from the etching solution.

[0183] The separation device 75 performs a separation step of separating a portion of the metal plate 51 corresponding to one vapor deposition mask 20 and having a plurality of through holes 25 formed therein from the metal plate 51. In this manner, the vapor deposition mask 20 can be obtained.

[0184] Hereinafter, each step of the method for manufacturing the vapor deposition mask 20 will be described in detail.

[0185] First, a wound body 50 is prepared, which includes a metal plate 51 wound around a shaft member 52. For example, a metal plate made of an iron alloy containing nickel is used as the metal plate 51. The thickness of the metal plate 51 is, for example, not less than 5 μm and not more than 50 μm. Methods for producing the metal plate 51 having the desired thickness include rolling, plating, and film-forming methods.

[0186] Next, using the resist film forming apparatus 71, a resist film is formed on the first surface 51a and the second surface 51b of the metal plate 51 unwound by the unwinding apparatus. Figure 16 The resist films 53a and 53b are formed as shown. For example, a dry film containing a photosensitive resist material such as an acrylic photocurable resin is attached to the first surface 51a and the second surface 51b of the metal plate 51 to form the resist films 53a and 53b. Alternatively, a coating liquid containing a negative photosensitive resist material can be applied to the first surface 51a and the second surface 51b of the metal plate 51, and the coating liquid can be dried to form the resist films 53a and 53b. The thickness of the resist films 53a and 53b can be, for example, less than 15 μm, less than 10 μm, less than 6 μm, or less than 4 μm. In addition, the thickness of the resist films 53a and 53b can be, for example, greater than 1 μm, greater than 3 μm, greater than 5 μm, or greater than 7 μm. The thickness range of the resist films 53a and 53b can be determined by combining any one of the plurality of upper limit candidate values ​​with any one of the plurality of lower limit candidate values. Alternatively, the thickness range of the resist films 53a and 53b can be determined by combining any two of the plurality of upper limit candidate values. Alternatively, the thickness range of the resist films 53a and 53b can be determined by combining any two of the plurality of lower limit candidate values.

[0187] Next, the resist films 53a and 53b are exposed and developed using the exposure and development device 72. Figure 17 As shown, the first resist pattern 53 c can be formed on the first surface 51 a of the metal plate 51 , and the second resist pattern 53 d can be formed on the second surface 51 b of the metal plate 51 .

[0188] Next, an etching process is performed using the etching device 73 to etch the metal plate 51 using the resist patterns 53c and 53d as masks. The etching process includes a first surface etching process and a second surface etching process.

[0189] First, if Figure 18 As shown, the first surface etching step is performed. In the first surface etching step, the first etching liquid is used to etch the area of ​​the first surface 51a of the metal plate 51 that is not covered by the first resist pattern 53c. For example, the first etching liquid is sprayed onto the first surface 51a of the metal plate 51 through the first resist pattern 53c from a nozzle arranged on the side facing the first surface 51a of the transported metal plate 51. At this time, the second surface 51b of the metal plate 51 may be covered with a film or the like that is resistant to the first etching liquid.

[0190] The result of the etching process on the first side is as follows: Figure 18As shown, the first etching liquid is used to erode the area of ​​the metal plate 51 not covered by the first resist pattern 53c. As a result, a plurality of first recesses 30 are formed on the first surface 51a of the metal plate 51. As the first etching liquid, for example, an etching liquid containing ferric chloride solution and hydrochloric acid is used.

[0191] Then, if Figure 19 As shown, the second side etching process is performed. In the second side etching process, the second etching liquid is used to etch the area of ​​the second side 51b of the metal plate 51 that is not covered by the second resist pattern 53d. As a result, the second recess 35 is formed on the second side 51b of the metal plate 51. The etching of the second side 51b is performed until the first recess 30 and the second recess 35 are connected to each other, thereby forming a through hole 25. As the second etching liquid, the same as the above-mentioned first etching liquid, for example, an etching liquid containing ferric chloride solution and hydrochloric acid is used. It should be noted that when etching the second side 51b, as shown in FIG. Figure 19 As shown, the first recess 30 may be covered with a resin 54 that is resistant to the second etching solution.

[0192] In the second side etching process, Figure 20 As shown, etching can be performed until two adjacent second recesses 35 are connected. At the portion where two adjacent second recesses 35 are connected, the second resist pattern 53d is peeled off from the metal plate 51. Figure 7 As shown, the second surface 20 b may partially remain between two adjacent second recesses 35 .

[0193] Reference Figures 21 to 25 , the second side etching process is described in detail. Figure 21 It is a plan view showing the second resist pattern provided on the second surface of the metal plate 51 . Figure 21 In FIG. 1 , the first end 32 of the first recess 30 formed by the first surface etching step is indicated by a dotted line.

[0194] like Figure 21As shown, the second resist pattern 53d includes a first portion 53d1 extending along the first direction D1 and a second portion 53d2 extending along the second direction D2. When the second resist pattern 53d is viewed along the normal to the second surface 20b, the first portion 53d1 extends along the first portion 32a of the first end 32. The first portion 53d1 is located between the first portions 32a of two adjacent first recesses 30. The first portions 32a of the two adjacent first recesses 30 face each other in a direction perpendicular to the first direction D1. When the second resist pattern 53d is viewed along the normal to the second surface 20b, the second portion 53d2 extends along the second portion 32b of the first end 32. The second portion 53d2 is located between the second portions 32b of the two adjacent first recesses 30. The second portions 32b of the two adjacent first recesses 30 face each other in a direction perpendicular to the second direction D2. The width W1 of the first portion 53d1 of the second resist pattern 53d is larger than the width W2 of the second portion 53d2. The width W1 of the first portion 53d1 is also referred to as a first width. The width W2 of the second portion 53d2 is also referred to as a second width.

[0195] The difference between the first width W1 and the second width W2 is, for example, 0.5 μm or greater, 2 μm or greater, 5 μm or greater, 10 μm or greater, or 15 μm or greater. Furthermore, the difference between the first width W1 and the second width W2 is, for example, 260 μm or less, 200 μm or less, 150 μm or less, 100 μm or less, 50 μm or less, 30 μm or less, or 20 μm or less.

[0196] The range of the difference between the first width W1 and the second width W2 can be determined by a combination of any one of the above-mentioned multiple upper limit candidate values ​​and any one of the above-mentioned multiple lower limit candidate values. For example, it can be greater than 0.5μm and less than 260μm, greater than 2μm and less than 200μm, greater than 5μm and less than 200μm, greater than 10μm and less than 150μm, greater than 15μm and less than 100μm, greater than 15μm and less than 50μm, greater than 15μm and less than 30μm, or greater than 15μm and less than 20μm. Furthermore, the range of the difference between the first width W1 and the second width W2 may be determined by a combination of any two of the plurality of candidate values ​​for the lower limit, for example, 0.5 μm to 15 μm, 0.5 μm to 10 μm, 2 μm to 15 μm, 2 μm to 10 μm, 5 μm to 15 μm, or 5 μm to 10 μm. Furthermore, the range of the difference between the first width W1 and the second width W2 may be determined by a combination of any two of the plurality of candidate values ​​for the upper limit, for example, 20 μm to 250 μm, 30 μm to 250 μm, 50 μm to 250 μm, 100 μm to 250 μm, 100 μm to 200 μm, 150 μm to 260 μm, or 150 μm to 200 μm.

[0197] Next, the second surface etching process will be described in detail. First, the second surface etching process performed between the first portions 53d1 of the second resist pattern 53d in the metal plate 51 will be described. Figure 22 and Figure 23 It is shown in Figure 21 FIG. 1 is a diagram showing a second surface etching step performed on a cross section of the metal plate 51 taken along line XXII-XXII.

[0198] like Figure 22 As indicated by the middle arrow, etching of the metal plate 51 on the second surface 51b side proceeds isotropically in all directions. As a result, a second recess 35 having a curved second wall 36 is formed on the second surface 51b of the metal plate 51. As etching progresses in the thickness direction of the metal plate 51, the second recess 35 communicates with the first recess 30, forming a connection 41 between the first wall 31 of the first recess 30 and the second wall 36 of the second recess 35. After the second recess 35 communicates with the first recess 30, further etching in the thickness direction of the metal plate 51 causes the connection 41 to shift toward the first surface 51a. This shift in the connection 41 toward the first surface 51a reduces the height H1 of the first wall section 31a.

[0199] Incidentally, etching is performed in the surface direction of the metal plate 51, as shown in FIG. Figure 23 As shown in FIG. 3 , if two adjacent second recesses 35 are connected, at least a portion of the second wall surface 36 of the second recess 35 is separated from the first portion 53d1 of the second resist pattern 53d. For example, a portion of the second wall surface 36 located between the central portions 32ac of two adjacent first recesses 30 is separated from the first portion 53d1 when viewed from above. As a result, a gap is formed between the first portion 53d1 of the second resist pattern 53d and the metal plate 51. Then, as shown in FIG. Figure 23 As indicated by the middle arrow, the second etching liquid generates a flow along the second surface 51b of the metal plate 51, passing between the first portion 53d1 of the second resist pattern 53d and the metal plate 51. If the second etching liquid generates a flow along the second surface 51b, it becomes difficult for the second etching liquid to flow or circulate in directions other than the second surface 51b. As a result, for example, etching progress in the thickness direction of the metal plate 51 is suppressed. Therefore, after the second etching liquid generates a flow along the second surface 51b, the height H1 of the first wall surface 31 of the first recess 30 is difficult to reduce.

[0200] Next, the second surface etching step performed between the second portions 53 d 2 of the second resist pattern 53 d in the metal plate 51 will be described. Figure 24 and Figure 25 They are shown in Figure 21 FIG. 2 is a diagram showing a second surface etching step performed on a cross section of the metal plate 51 taken along line XXIV-XXIV.

[0201] Between the second portions 53d2 of the second resist pattern 53d, Figure 24 As indicated by the middle arrow, etching of the metal plate 51 on the second surface 51b side proceeds isotropically in all directions. If etching progresses along the surface of the metal plate 51, connecting two adjacent second recesses 35, at least a portion of the second wall surface 36 of the second recess 35 separates from the second portion 53d2 of the second resist pattern 53d. For example, a portion of the second wall surface 36 located between the central portions 32bc of two adjacent first recesses 30, when viewed from above, separates from the first portion 53d1. As a result, a gap is formed between the second portion 53d2 and the metal plate 51.

[0202] The second width W2 of the second portion 53d2 is smaller than the first width W1 of the first portion 53d1. Therefore, when viewed from above, two adjacent second recesses 35 sandwiching the second portion 53d2 are connected at an earlier stage than when viewed from above, two adjacent second recesses 35 sandwiching the first portion 53d1 are connected. Consequently, the gap between the second portion 53d2 and the metal plate 51 is formed earlier than the gap between the first portion 53d1 and the metal plate 51. The earlier the gap is formed, the greater the height of the through-hole 25 wall surface at the time the gap is formed. Therefore, the height H2 of the second wall surface section 31b at the stage where the gap is formed between the second portion 53d2 and the metal plate 51 is greater than the height H1 of the first wall surface section 31a at the stage where the gap is formed between the first portion 53d1 and the metal plate 51. Furthermore, once the second etching solution flows along the surface direction of the second surface 51b, the height of the first wall surface 31 of the first recess 30 is less likely to decrease. Therefore, after the second-side etching step is completed, the height H2 of the second wall surface section 31b is greater than the height H1 of the first wall surface section 31a. This allows the vapor deposition mask 20 to be configured such that the first wall surface 31 of the first recess 30 of the through-hole 25 has different heights depending on the position. The difference between the height H1 and the height H2 can be appropriately adjusted based on, for example, the difference between the first width W1 of the first portion 53d1 of the second resist pattern 53d and the second width W2 of the second portion 53d2.

[0203] The method for manufacturing a vapor deposition mask may further include an inspection step of inspecting the vapor deposition mask 20. The inspection step includes at least one of inspecting the position of a component of the vapor deposition mask 20, inspecting the size of a component of the vapor deposition mask 20, or inspecting the distance between two components of the vapor deposition mask 20. The component to be inspected is, for example, the through-hole 25.

[0204] The inspection step may include measuring the height H1 and the height H2 of the first wall surface 31 of the first recess 30 of the through-hole 25. The height H1 and the height H2 may be average values ​​of heights measured for a plurality of samples.

[0205] As described above, a plurality of samples can be collected at a plurality of inspection locations P of a single vapor deposition mask 20. Alternatively, a plurality of samples can be collected at a plurality of inspection locations P of a plurality of vapor deposition masks 20. For example, Figure 26As shown, multiple samples can be collected from multiple inspection locations P of multiple deposition masks 20 arranged along the width direction F2 of the metal plate 51 on the front end 51e side in the longitudinal direction F1 of the metal plate 51. Alternatively, multiple samples can be collected from multiple inspection locations P of multiple deposition masks 20 arranged along the width direction F2 of the metal plate 51 on the rear end 51f side in the longitudinal direction F1 of the metal plate 51. Alternatively, multiple samples can be collected from multiple inspection locations P of multiple deposition masks 20 arranged along the width direction F2 of the metal plate 51 at the intermediate portion between the front end 51e and the rear end 51f of the metal plate 51. The average value of the height values ​​measured for the multiple samples collected in this manner can be used as the height H1 and height H2 of the first wall surface 31 of the first recess 30 of the through-hole 25.

[0206] The inspection process may include a determination step of whether the vapor deposition mask 20 is acceptable based on the difference between the height H1 and the height H2 of the first wall surface 31 of the first recessed portion 30 of the through-hole 25. In the determination step, for example, a vapor deposition mask 20 whose height H1 is smaller than the height H2 is determined to be acceptable. Alternatively, a vapor deposition mask 20 whose height H1 is smaller than the height H2 by at least 1 μm may be determined to be acceptable.

[0207] Next, a welding process is performed, in which the vapor deposition mask 20 obtained as described above is welded to the frame 15 while tension is applied to the vapor deposition mask 20. The tension is adjusted so that the plurality of through holes 25 of the vapor deposition mask 20 are aligned. In this way, the vapor deposition mask device 10 including the vapor deposition mask 20 and the frame 15 can be obtained.

[0208] Next, a method for manufacturing an organic EL display device 100 using the vapor deposition mask 20 of the present embodiment will be described. The method for manufacturing the organic EL display device 100 includes a vapor deposition step, in which a vapor deposition material 98 is vapor-deposited on a substrate such as an organic EL substrate 92 using the vapor deposition mask 20. In the vapor deposition step, first, the vapor deposition mask device 10 is arranged so that the vapor deposition mask 20 and the organic EL substrate 92 face each other. In addition, a magnet 93 is used to make the vapor deposition mask 20 and the organic EL substrate 92 fit tightly. In addition, the interior of the vapor deposition device 90 is made into a vacuum atmosphere. In this state, the vapor deposition material 98 is evaporated and flies toward the organic EL substrate 92 through the vapor deposition mask 20, so that the vapor deposition material 98 is attached to the organic EL substrate 92 in a pattern corresponding to the through-holes 25 of the vapor deposition mask 20.

[0209] Furthermore, in this embodiment, the first end 32 on the first surface 20a side of the through-hole 25 of the vapor deposition mask 20 includes a pair of first portions 32a extending in a first direction D1 and a pair of second portions 32b extending in a second direction D2 intersecting the first direction D1 and having a dimension shorter than the first portions 32a. Furthermore, the height H1 of the first wall section 31a including the first portion 32a is smaller than the height H2 of the second wall section 31b including the second portion 32b. Therefore, the first wall section 31a, which is larger than the second wall section 31b, can suppress the generation of shadows during the vapor deposition process. This increases the effective area of ​​the vapor deposition layer 99 formed on the organic EL substrate 92 while suppressing a decrease in the strength of the vapor deposition mask 20.

[0210] It should be noted that, in addition to the vapor deposition step of vapor-depositing the vapor deposition material 98 on a substrate such as the organic EL substrate 92 using the vapor deposition mask 20, the method for manufacturing the organic EL display device 100 may also include various steps. For example, the method for manufacturing the organic EL display device 100 may also include a step of forming a first electrode on the substrate. The vapor-deposited layer is formed on the first electrode. In addition, the method for manufacturing the organic EL display device 100 may also include a step of forming a second electrode on the vapor-deposited layer. In addition, the method for manufacturing the organic EL display device 100 may also include a packaging step of packaging the first electrode, vapor-deposited layer, and second electrode provided on the organic EL substrate 92.

[0211] Furthermore, the vapor-deposited layer formed on a substrate such as the organic EL substrate 92 using the vapor deposition mask 20 is not limited to the aforementioned light-emitting layer, but may also include other layers. For example, the vapor-deposited layer may include, in order from the first electrode side, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like. In this case, the vapor deposition process using the vapor deposition mask 20 corresponding to each layer may be performed separately.

[0212] It should be noted that various modifications can be made to the above-described embodiment. Below, modifications will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be given the same reference numerals as those used for corresponding parts in the above-described embodiment, and repeated descriptions will be omitted. In addition, if the effects obtained in the above-described embodiment can also be clearly achieved in a modification, the description thereof may be omitted.

[0213] (First Modification of Organic EL Display Device)

[0214] In the above-mentioned embodiment Figure 13 , an example is shown in which the second vapor deposition layer 99B and the third vapor deposition layer 99C are arranged along the direction in which the long side of the first vapor deposition layer 99A extends. However, the present invention is not limited thereto. Figure 27As shown, the second vapor deposition layer 99B and the third vapor deposition layer 99C may also be arranged in a direction perpendicular to the direction in which the long side of the first vapor deposition layer 99A extends. Figure 27 As shown, the second vapor-deposited layer 99B and the third vapor-deposited layer 99C may also have a pair of long sides and a pair of short sides, similarly to the first vapor-deposited layer 99A. Similar to the first vapor-deposited layer 99A, the second vapor-deposited layer 99B and the third vapor-deposited layer 99C may be formed using a vapor deposition mask 20 having a first end 32 including a first portion 32a and a second portion 32b having different lengths.

[0215] (Second Modification of Organic EL Display Device)

[0216] In the above-mentioned embodiment Figure 13 , an example is shown in which the area of ​​the first vapor-deposited layer 99A is made larger than the areas of the other vapor-deposited layers 99B and 99C by making the length of one pair of sides of the first vapor-deposited layer 99A larger than the length of the other pair of sides. However, there is no particular limitation on the specific method for making the area of ​​the first vapor-deposited layer 99A larger than the areas of the other vapor-deposited layers 99B and 99C. For example, Figure 28A As shown, the first vapor-deposited layer 99A may include four sides having a size M1, and the third vapor-deposited layer 99C may include four sides having a size M2 smaller than the size M1. The second vapor-deposited layer 99B may include: a pair of sides having a size M3, and a pair of sides having a size M4 smaller than the size M3. The sides of the second vapor-deposited layer 99B having the size M3 may face the sides of the first vapor-deposited layer 99A in the first direction D1 or the second direction D1. The sides of the second vapor-deposited layer 99B having the size M4 may face the sides of the third vapor-deposited layer 99C in the first direction D1 or the second direction D1. The size M3 may be the same as the size M1. The size M4 may be the same as the size M2. As shown Figure 29 As shown, the second vapor-deposited layer 99B can be formed by using the vapor deposition mask 20 including the first end 32 including the first portion 32 a and the second portion 32 b having different lengths.

[0217] The first direction D1 may coincide with the longitudinal direction or the width direction of the vapor deposition mask 20. The first direction D1 may also be inclined relative to the longitudinal direction or the width direction of the vapor deposition mask 20. For example, the first direction D1 may be inclined at 45 degrees relative to the longitudinal direction of the vapor deposition mask 20. The first vapor deposition layer 99A, the second vapor deposition layer 99B, and the third vapor deposition layer 99C may emit blue light, green light, and red light, respectively.

[0218] like Figure 29As shown, in addition to the through-hole 25 having the first end 32 including the first portion 32a and the second portion 32b having different lengths, the vapor deposition mask 20 may further include a through-hole 25 having the first end 32 including the third portion 32c and the fourth portion 32d having different lengths. The through-hole 25 having the first end 32 including the third portion 32c and the fourth portion 32d is equivalent to the through-hole 25 having the first end 32 including the first portion 32a and the second portion 32b rotated 90 degrees in a top view.

[0219] In the above Figure 13 、 Figure 27 、 Figure 28A The example of a gap between the vapor deposition layers when viewed from above is shown in FIG, but the present invention is not limited thereto. Figure 28B As shown, the first vapor-deposited layer 99A and the third vapor-deposited layer 99C may be in contact with each other when viewed from above. The second vapor-deposited layer 99B may be in contact with the first vapor-deposited layer 99A when viewed from above, or may be in contact with the third vapor-deposited layer 99C when viewed from above. In the examples described below, two adjacent vapor-deposited layers may be in contact with each other. Figure 28B The second vapor deposition layer 99B can be Figure 28A The second vapor deposition layer 99B is similarly formed by using Figure 29 The evaporation mask 20 shown is formed.

[0220] like Figure 28B As shown, the side dimension M3 of the second vapor deposition layer 99B may be smaller than the side dimension M1 of the first vapor deposition layer 99A. The side dimension M4 of the second vapor deposition layer 99B may be smaller than the side dimension M2 of the third vapor deposition layer 99C.

[0221] (Third Modification of Organic EL Display Device)

[0222] In the above embodiment and modification, the outline of the vapor deposition layer 99 and the shape of the first end 32 of the through hole 25 of the vapor deposition mask 20 are shown as examples of quadrilaterals. However, as long as the through hole 25 has a first end 32 including a first portion 32a and a second portion 32b having different lengths, the outline of the vapor deposition layer 99 and the shape and pattern of the through hole 25 are not particularly limited. For example, Figure 30 As shown, the evaporated layers 99A, 99B, and 99C may have a hexagonal outline.

[0223] Figure 31This is a top view of the deposition mask 20 used to form the first deposited layer 99A. The first end 32 of the through-hole 25 of the deposition mask 20 includes a pair of first portions 32a extending along a first direction D1; a pair of second portions 32b extending along a second direction D2 intersecting the first direction D1; and a pair of third portions 32c extending along a third direction D3 intersecting the first and second directions D2. Both the second and third directions D2 intersect the first direction D1 at an angle greater than 90 degrees and less than 180 degrees. The first portion 32a has a first dimension L1 in the first direction D1, the second portion 32b has a second dimension L2 in the second direction D2 that is smaller than the first dimension L1, and the third portion 32c has a third dimension L3 in the third direction D3 that is smaller than the first dimension L1.

[0224] like Figure 31 As shown, in two through-holes 25 adjacent in a direction perpendicular to the first direction D1, the first portions 32a face each other with a first gap C1 between them. Furthermore, in two through-holes 25 adjacent in a direction perpendicular to the second direction D2, the second portions 32b face each other with a second gap C2 between them. The first gap C1 is greater than the second gap C2. Therefore, similarly to the above-described embodiment, the first width W1 of the first portion 53d1 of the second resist pattern 53d provided on the second surface 51b of the metal plate 51 in the portion corresponding to the first gap C1 is greater than the second width W2 of the second portion 53d2 of the second resist pattern 53d provided on the second surface 51b of the metal plate 51 in the portion corresponding to the second gap C2. Therefore, similar to the above-described embodiment, by performing the second-side etching step, even in this modified example, the height H1 of the portion of the first wall surface 31 connected to the first portion 32a of the first end 32 can be made smaller than the height H2 of the portion of the first wall surface 31 connected to the second portion 32b of the first end 32. Consequently, the first wall surface 31 connected to the larger first portion 32a can be shielded from the formation of shadows during the vapor deposition step. This can increase the effective area of ​​the vapor-deposited layer 99 formed on the organic EL substrate 92 while suppressing a decrease in the strength of the vapor deposition mask 20.

[0225] The fact that height H1 is smaller than height H2 can also be explained as follows, based on the fact that second spacing C2 is smaller than first spacing C1. Here, it is assumed that a top portion 43 exists at least partially between two adjacent through-holes 25. In this case, second spacing C2 is smaller than first spacing C1, so the distance from second portion 32b of through-hole 25 to top portion 43 is shorter than the distance from first portion 32a of through-hole 25 to top portion 43. As a result, in the portion of through-hole 25 corresponding to second portion 32b, connection portion 41 is positioned closer to second surface 51b than in the portion corresponding to first portion 32a. In other words, height H1 is smaller than height H2.

[0226] Reference Figures 32 to 34 , the case where the second interval C2 is smaller than the first interval C1 and the height H1 is smaller than the height H2 will be described. Figure 32 FIG. 1 is a top view showing the first end 32 of the through hole 25 of the vapor deposition mask 20. Figure 32 In the illustrated example, the first end 32 of the through-hole 25 includes a first portion 32a that faces each other at a first gap C1 in a second direction D2 perpendicular to the first direction D1, and a second portion 32b that faces each other at a second gap C2 in the first direction D1. The first gap C1 is greater than the second gap C2. Furthermore, a top portion 43 is located on the second surface 51b side of the metal plate 51 between the first portions 32a that face each other at the first gap C1 in the second direction D2. Furthermore, a top portion 43 is also located on the second surface 51b side of the metal plate 51 between the second portions 32b that face each other at the second gap C2 in the first direction D1.

[0227] Figure 33 It shows Figure 32 A cross-sectional view of the first portion 32a of the first end 32 of the through hole 25. Figure 32 and Figure 33 In FIG. 4 , reference numeral S1 represents the distance between the top portion 43 and the first portion 32 a of the first end 32 in the direction in which the first portion 32 a faces.

[0228] Figure 34 It shows Figure 32 A cross-sectional view of the second portion 32b of the first end 32 of the through hole 25. Figure 32 and Figure 34 In FIG. 4 , reference numeral S2 represents the distance between the top portion 43 and the second portion 32 b of the first end 32 in the direction in which the second portion 32 b faces.

[0229] exist Figures 32 to 34 In the example shown, the second interval C2 is smaller than the first interval C1. Therefore, the distance S2 between the top 43 and the second portion 32b of the first end 32 is also smaller than the distance S1 between the top 43 and the first portion 32a of the first end 32. Figure 33 and Figure 34 As shown, the smaller the distance between the top 43 and the first end 32, the closer the connecting portion 41 is to the second surface 51b. Therefore, when the second interval C2 is smaller than the first interval C1, the height H2 is larger than the height H1. In other words, when the second interval C2 is smaller than the first interval C1, the height H1 is smaller than the height H2.

[0230] (Modification of the First End of the Through-Hole in the Vapor Deposition Mask)

[0231] In the above embodiment and modification, the first portion 32a and the second portion 32b of the first end 32 of the through hole 25 of the vapor deposition mask 20 are shown as extending in the first direction D1 and the second direction D2, respectively. However, as long as the first dimension L1 of the first portion 32a in the first direction D1 is larger than the second dimension L2 of the second portion 32b in the second direction D2, the specific shapes of the first portion 32a and the second portion 32b are not particularly limited. For example, Figure 35 As shown, the first end 32 may have an elliptical shape when viewed from above. In this case, the first dimension L1 of the first portion 32a is the length of the side extending in the first direction D1 of a quadrilateral 32p circumscribing the first end 32, which includes a pair of sides extending in the first direction D1 and a pair of sides extending in the second direction D2. Furthermore, the second dimension L2 of the second portion 32b is the length of the side extending in the second direction D2 of the quadrilateral 32p circumscribing the first end 32.

[0232] In this modified example, the height H1 of the portion of the first wall surface 31 connected to the first portion 32a of the first end 32 is also smaller than the height H2 of the portion of the first wall surface 31 connected to the second portion 32b of the first end 32. Therefore, the first wall surface 31 connected to the larger first portion 32a can suppress the generation of shadows during the vapor deposition process. This increases the effective area of ​​the vapor-deposited layer 99 formed on the organic EL substrate 92 while suppressing a decrease in the strength of the vapor deposition mask 20.

[0233] (Modification of the Height of the Wall Surface of the Through-Hole of the Vapor Deposition Mask)

[0234] In the above-described embodiment and modification, an example is shown in which the height H1 of the first wall section 31a of the first wall surface 31 of the through hole 25 is smaller than the height H2 of the second wall section 31b of the first wall surface 31. In addition, an example is shown in which two second recesses 35 adjacent to each other with the second portion 53d2 sandwiched therebetween when viewed from above are connected at an earlier stage than two second recesses 35 adjacent to each other with the first portion 53d1 sandwiched therebetween when viewed from above. Therefore, an example is shown in which the gap between the second portion 53d2 and the metal plate 51 is formed earlier than the gap between the first portion 53d1 and the metal plate 51. In this case, Figure 9 The first height H11 shown can be greater than Figure 10The second height H12 shown. This is because, the later the gap is formed between the second resist pattern 53d and the metal plate 51, the greater the height of the entire wall surface is maintained. The difference between the first height H11 and the second height H12 is, for example, greater than 0 μm, or greater than 0.1×T, or greater than 0.2×T, or greater than 0.3×T. T is the thickness of the vapor deposition mask 20. In addition, the difference between the first height H11 and the second height H12 is, for example, less than 0.7×T, or less than 0.5×T, or less than 0.4×T. In this way, the effective area of ​​the vapor deposition layer 99 formed on the organic EL substrate 92 can be increased while suppressing the reduction in the strength of the vapor deposition mask 20.

[0235] The range of the difference between the first height H11 and the second height H12 can be determined by a combination of any one of the plurality of candidate values ​​for the upper limit and any one of the plurality of candidate values ​​for the lower limit. For example, it can be 0 μm or more and 0.7×T or less, 0.1×T or more and 0.7×T or less, 0.2×T or more and 0.5×T or less, or 0.3×T or more and 0.4×T or less. Furthermore, the range of the difference between the first height H11 and the second height H12 can also be determined by a combination of any two of the plurality of candidate values ​​for the lower limit. For example, it can be 0 μm or more and 0.3×T or less, 0.1×T or more and 0.3×T or less, 0.1×T or more and 0.2×T or more, or 0.2×T or more and 0.3×T or less. In addition, the range of the difference between the first height H11 and the second height H12 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be greater than 0.4×T and less than 0.7×T, it can be greater than 0.4×T and less than 0.5×T, or it can be greater than 0.5×T and less than 0.7×T.

[0236] Example

[0237] Next, the embodiments of the present invention will be described in more detail with reference to Examples. However, the embodiments of the present invention are not limited to the description of the following Examples unless the scope of the invention exceeds the scope of the invention.

[0238] (Example 1)

[0239] Prepare to have Figures 8 to 10 The deposition mask 20 has the structure shown. The dimensions of each part of the deposition mask 20 are as follows.

[0240] Height H1 of the first wall surface section 31a: 3 μm

[0241] Height H2 of the second wall surface section 31b: 4 μm

[0242] First dimension L1 of the first portion 32a: 48 μm

[0243] Second dimension L2 of the second portion 32b: 46 μm

[0244] Next, the strength of the vapor deposition mask 20 was evaluated. Specifically, a pair of edge portions 17a and 17b of the vapor deposition mask 20 were grasped and a tension of 1 kgf was applied to the vapor deposition mask 20 along the longitudinal direction of the vapor deposition mask 20 to confirm whether the vapor deposition mask 20 had an undulating shape. The smaller the strength of the vapor deposition mask 20, the more likely it is to have an undulating shape. The undulating shape can include multiple peaks arranged along the width direction intersecting the longitudinal direction of the vapor deposition mask 20. In the following description, the average value of the intervals between the multiple peaks arranged in the width direction of the vapor deposition mask 20 is also referred to as the period of the undulating shape.

[0245] When a tension of 1 kgf was applied to the vapor deposition mask 20 , no visible undulations were observed on the vapor deposition mask 20 .

[0246] Next, a vapor deposition process is performed to deposit the vapor deposition material 98 onto the substrate 92 using the vapor deposition mask 20 to form the vapor deposition layer 99. Next, the dimensions of the vapor deposition layer 99 are measured. Figure 9 and Figure 10 The thickness E1 is shown. In addition, the thickness E2 is set to 95% of the thickness E1, and the calculated Figure 9 Dimensions L4 and L5 shown Figure 10 The dimension L3 shown is shown. As a result, the dimension L4 is 40 μm and the dimension L3 is 40 μm. In addition, based on the dimensions L2 and L4, the Figure 9 The distance K1 is calculated based on the dimensions L1 and L3. Figure 10 As a result, the distance K1 is 3 μm and the distance K2 is 4 μm. It should be noted that K1 = (L2-L4) / 2 and K2 = (L1-L3) / 2.

[0247] (Example 2)

[0248] Prepare to have Figures 8 to 10 The deposition mask 20 has the structure shown. The dimensions of each part of the deposition mask 20 are as follows.

[0249] Height H1 of the first wall surface section 31a: 2 μm

[0250] Height H2 of the second wall surface section 31b: 4 μm

[0251] First dimension L1 of the first portion 32a: 48 μm

[0252] Second dimension L2 of the second portion 32b: 46 μm

[0253] Next, the strength of the vapor deposition mask 20 was evaluated in the same manner as in Example 1. When a tension of 1 kgf was applied to the vapor deposition mask 20 , no visible undulations were observed in the vapor deposition mask 20 .

[0254] Next, a vapor deposition step was performed using the vapor deposition mask 20, similar to Example 1. Dimensions L4 and L3 were calculated, similar to Example 1. Dimension L4 was 42 μm, and dimension L3 was 40 μm. Distance K1 was calculated based on dimensions L2 and L4, and distance K2 was calculated based on dimensions L1 and L3. Distance K1 was 2 μm, and distance K2 was 4 μm.

[0255] (Example 3)

[0256] Prepare to have Figures 8 to 10 The deposition mask 20 has the structure shown. The dimensions of each part of the deposition mask 20 are as follows.

[0257] Height H1 of the first wall surface section 31a: 2 μm

[0258] Height H2 of the second wall surface section 31b: 3 μm

[0259] First dimension L1 of the first portion 32a: 48 μm

[0260] Second dimension L2 of the second portion 32b: 46 μm

[0261] Next, the strength of the deposition mask 20 was evaluated in the same manner as in Example 1. A tension of 1 kgf was applied to the deposition mask 20. Visually observable undulations were observed in the deposition mask 20, but the undulations had a large period, specifically, exceeding 30 mm. Furthermore, two peaks were observed, aligned along the width of the deposition mask 20.

[0262] Next, a vapor deposition step was performed using the vapor deposition mask 20, similar to Example 1. Dimensions L4 and L3 were calculated, similar to Example 1. Dimension L4 was 42 μm, and dimension L3 was 42 μm. Distance K1 was calculated based on dimensions L2 and L4, and distance K2 was calculated based on dimensions L1 and L3. Distance K1 was 2 μm, and distance K2 was 3 μm.

[0263] (Comparative Example 1)

[0264] Prepare to have Figures 8 to 10 The deposition mask 20 has the structure shown. The dimensions of each part of the deposition mask 20 are as follows.

[0265] Height H1 of the first wall surface section 31a: 4 μm

[0266] Height H2 of the second wall surface section 31b: 4 μm

[0267] First dimension L1 of the first portion 32a: 48 μm

[0268] Second dimension L2 of the second portion 32b: 46 μm

[0269] Next, the strength of the vapor deposition mask 20 was evaluated in the same manner as in Example 1. When a tension of 1 kgf was applied to the vapor deposition mask 20 , no visible undulations were observed in the vapor deposition mask 20 .

[0270] Next, a vapor deposition step was performed using the vapor deposition mask 20, similar to Example 1. Dimensions L4 and L3 were calculated, similar to Example 1. Dimension L4 was 38 μm, and dimension L3 was 40 μm. Distance K1 was calculated based on dimensions L2 and L4, and distance K2 was calculated based on dimensions L1 and L3. Distance K1 was 4 μm, and distance K2 was 4 μm.

[0271] (Comparative Example 2)

[0272] Prepare to have Figures 8 to 10 The deposition mask 20 has the structure shown. The dimensions of each part of the deposition mask 20 are as follows.

[0273] Height H1 of the first wall surface section 31a: 2 μm

[0274] Height H2 of the second wall section 31b: 2 μm

[0275] First dimension L1 of the first portion 32a: 48 μm

[0276] Second dimension L2 of the second portion 32b: 46 μm

[0277] Next, the strength of the deposition mask 20 was evaluated in the same manner as in Example 1. After applying a tension of 1 kgf to the deposition mask 20, visually observable undulations were observed. Furthermore, the period of the undulations was small, specifically less than 20 mm. Furthermore, three peaks were observed, aligned along the width of the deposition mask 20.

[0278] Next, a vapor deposition step was performed using the vapor deposition mask 20, similar to Example 1. Dimensions L4 and L3 were calculated, similar to Example 1. Dimension L4 was 42 μm, and dimension L3 was 44 μm. Distance K1 was calculated based on dimensions L2 and L4, and distance K2 was calculated based on dimensions L1 and L3. Distance K1 was 2 μm, and distance K2 was 2 μm.

[0279] The results of Examples 1 to 3 and Comparative Examples 1 and 2 are summarized and shown in FIG. Figure 36 In. Figure 36 In the column of effective area, "very good" means that the distance K1 from the first portion 32a of the first end 32 to the effective edge portion 99e of the vapor deposition layer 99 is less than 2μm. In addition, "good" means that the distance K1 exceeds 2μm and is less than 3μm. In addition, "poor" means that the distance K1 is more than 4μm. In addition, Figure 36 In the column of strength, "very good" means that no visually recognizable undulations appear on the vapor deposition mask. In addition, "good" means that visually recognizable undulations appear in the width direction of the vapor deposition mask, but the number of peaks of the undulations arranged in the width direction of the vapor deposition mask is 2 or less. In addition, "poor" means that visually recognizable undulations appear on the vapor deposition mask and the number of peaks of the undulations arranged in the width direction of the vapor deposition mask is 3 or more. According to Examples 1 to 3, by making the height H1 smaller than the height H2, the deformation of the vapor deposition mask 20 can be suppressed while increasing the effective area of ​​the vapor deposition layer 99.

Claims

1. A vapor deposition mask having through holes, wherein: The evaporation mask has: Page 1; a second surface located on the opposite side of the first surface; and a wall surface including a first end located at the first surface and a second end located at the second surface, The wall defines the through hole, The wall surface includes: a first wall surface extending from the first end toward the second surface; a second wall surface extending from the second end toward the first surface; and a connecting portion connecting the first wall surface and the second wall surface. When the through hole is viewed from the first surface side along the normal direction of the first surface, the first end of the through hole includes: a first portion extending along a first direction and having a first dimension; and a second portion extending along a second direction intersecting the first direction and having a second dimension shorter than the first dimension, The first wall surface includes: a first wall surface section extending from the first portion toward the connecting portion; and a second wall surface section extending from the second portion toward the connecting portion. The height of the first wall section is smaller than the height of the second wall section. The first surface is located on the substrate side where the vapor deposition material is attached. The height of the wall surface at a cross section including the central portion of the first portion and perpendicular to the first direction, i.e., the first height, and the height of the wall surface at a cross section including the central portion of the second portion and perpendicular to the second direction, i.e., the second height, are smaller than the thickness of the vapor deposition mask. The first height is greater than the second height.

2. The evaporation mask according to claim 1, wherein The second dimension is shorter than the first dimension by 2 μm or more. The height of the first wall surface section is smaller than the height of the second wall surface section by 1 μm or more.

3. The evaporation mask according to claim 1, wherein When the through holes are observed from the first surface side along the normal direction of the first surface, the interval between two adjacent through holes in a direction perpendicular to the first direction, i.e., the first interval, is larger than the interval between two adjacent through holes in a direction perpendicular to the second direction, i.e., the second interval.

4. The evaporation mask according to claim 3, wherein The difference between the first interval and the second interval is 2 μm or more.

5. The evaporation mask according to claim 3, wherein The difference between the first interval and the second interval is 5 μm or more. The evaporation mask according to claim 3 , wherein: The difference between the first interval and the second interval is 100 μm or less.

7. The vapor deposition mask according to any one of claims 1 to 6, wherein The difference between the first height and the second height is greater than or equal to 0.3 times the thickness of the vapor deposition mask.

8. The vapor deposition mask according to any one of claims 1 to 6, wherein The difference between the first height and the second height is not more than 0.7 times the thickness of the vapor deposition mask.

9. The vapor deposition mask according to any one of claims 1 to 6, wherein The height of the first wall surface section and the height of the second wall surface section are 5 μm or less.

10. The vapor deposition mask according to any one of claims 1 to 6, wherein The thickness of the evaporation mask is 30 μm or less.

11. A method for manufacturing a vapor deposition mask having through holes, wherein: The method for manufacturing the vapor deposition mask comprises: a step of preparing a metal plate having a first surface and a second surface located on the opposite side of the first surface; and an etching step of etching the metal plate to form the through hole in the metal plate; The through hole includes a wall surface including a first end located on the first surface side and a second end located on the second surface side. The wall surface includes: a first wall surface extending from the first end toward the second surface; a second wall surface extending from the second end toward the first surface; and a connecting portion connecting the first wall surface and the second wall surface. The etching process includes: a first surface etching process, etching the first surface with an etching liquid to form the first wall surface; and a second surface etching process, etching the second surface with an etching liquid to form the second wall surface. When the through hole is viewed from the first surface side along the normal direction of the first surface, the first end of the through hole includes: a first portion extending along a first direction and having a first dimension; and a second portion extending along a second direction intersecting the first direction and having a second dimension shorter than the first dimension, The first wall surface includes: a first wall surface section extending from the first portion toward the connecting portion; and a second wall surface section extending from the second portion toward the connecting portion. The height of the first wall section is smaller than the height of the second wall section. The first surface is located on the substrate side where the vapor deposition material is attached. The height of the wall surface at a cross section including the central portion of the first portion and perpendicular to the first direction, i.e., the first height, and the height of the wall surface at a cross section including the central portion of the second portion and perpendicular to the second direction, i.e., the second height, are smaller than the thickness of the vapor deposition mask. The first height is greater than the second height.

12. The method for manufacturing a vapor deposition mask according to claim 11, wherein: The second dimension is shorter than the first dimension by 2 μm or more. The height of the first wall surface section is smaller than the height of the second wall surface section by 1 μm or more.

13. The method for manufacturing a vapor deposition mask according to claim 11 or 12, wherein: The thickness of the metal plate is 50 μm or less.

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