A high-power high-position fast intelligent on-off switch circuit and device

Abstract

The application discloses a high-power high-position fast intelligent on-off switch circuit and device, which comprises a standby battery, a switch control module and a main control module; the switch control module comprises a high-resistance state unit, a voltage division unit, a main power switch unit and a push-pull unit; the standby battery is electrically connected with the voltage division unit, the main power switch unit and the push-pull unit respectively, and the main power switch unit is electrically connected with the push-pull unit and a rear-stage circuit respectively; the push-pull unit is electrically connected with the voltage division unit, the voltage division unit is electrically connected with the high-resistance state unit, and the high-resistance state unit is electrically connected with the main control module. The application can realize the fast opening and closing of the standby power supply, accurately respond to the demand of the fire-fighting equipment, avoid delay or misoperation, reduce the current stress and heating degree of the main power switch unit, and prolong the service life of the standby power supply.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of emergency power supply, in particular to a high-power high-position fast intelligent on-off switch circuit and device. BACKGROUND

[0002] A fire power module is a device that provides reliable and stable power supply for fire-fighting equipment. It usually includes main power supply, backup power supply, switching controller, monitor and other components, and can ensure the normal operation of fire-fighting equipment in case of fire. The performance and quality of the fire power module directly affect the protection of fire safety and personnel life and property.

[0003] An important part of the fire power module is the backup power supply, which can provide emergency power supply when the main power supply fails, ensuring uninterrupted operation of the fire-fighting equipment. However, the backup power supply of the prior art also has some problems, such as:

[0004] 1) The turn-on and turn-off of the backup power supply need to quickly and accurately respond to the needs of the fire-fighting equipment to avoid delay or misoperation, otherwise it may cause damage or failure of the fire-fighting equipment.

[0005] 2) The turn-on and turn-off of the backup power supply will generate a large instantaneous current, which will cause a large current stress to the switch tube, possibly leading to overheating, damage or shortened life of the switch tube.

[0006] Therefore, how to invent a high-power high-position fast intelligent on-off switch circuit to improve the reliability of the fire backup battery is a technical problem that needs to be solved by the technical personnel in the field. SUMMARY

[0007] The purpose of the present application is to provide a high-power high-position fast intelligent on-off switch circuit and device. In the present application, when the main control module detects that the backup battery is insufficient, the main control module outputs a first control signal to turn off the main power switch unit, so that the backup battery and the rear circuit are isolated by the main power switch unit, and the backup battery no longer discharges to the rear circuit, preventing over-discharge of the backup battery. When the backup battery needs to supply power to the rear circuit, the main control module outputs a second control signal to turn on the main power switch unit, so that the backup battery and the rear circuit are turned on through the main power switch unit, and the backup battery can discharge to the rear circuit, allowing the rear circuit to work normally.

[0008] To solve the above technical problems, the present application provides a high-power high-position fast intelligent on-off switch circuit, which comprises a backup battery, a switch control module and a main control module; the switch control module comprises a high-impedance unit, a voltage dividing unit, a main power switch unit and a push-pull unit.

[0009] The backup battery is electrically connected with the voltage dividing unit, the main power switch unit and the push-pull unit respectively, the main power switch unit is electrically connected with the push-pull unit and the subsequent circuit respectively;

[0010] The push-pull unit is electrically connected with the voltage dividing unit, the voltage dividing unit is electrically connected with the high impedance state unit, and the high impedance state unit is electrically connected with the main control module.

[0011] Preferably, the high impedance state unit comprises a first high impedance state sub-unit, a grounding unit and a second high impedance state unit.

[0012] The main control module is electrically connected with the first high impedance state sub-unit, the first high impedance state sub-unit is electrically connected with the grounding unit, the grounding unit is electrically connected with the second high impedance state unit and an input power source respectively, and the second high impedance state sub-unit is electrically connected with the voltage dividing unit.

[0013] Preferably, the main power switch unit comprises a first MOS tube and a first resistor.

[0014] The source of the first MOS tube is electrically connected with the backup battery, the voltage dividing unit and the push-pull unit respectively, the drain of the first MOS tube is electrically connected with the subsequent circuit, the gate of the first MOS tube is electrically connected with the first end of the first resistor, and the second end of the first resistor is electrically connected with the push-pull unit.

[0015] Preferably, the push-pull unit comprises a first triode and a second triode.

[0016] The collector of the first triode is electrically connected with the source of the first MOS tube, the backup battery and the voltage dividing unit respectively, the emitter of the first triode is electrically connected with the second end of the first resistor and the emitter of the second triode respectively, the collector of the second triode is grounded, and the base of the first triode is electrically connected with the base of the second triode and the voltage dividing unit respectively.

[0017] Preferably, the voltage dividing unit comprises a second resistor, a third resistor and a first diode.

[0018] The first end of the second resistor is electrically connected with the backup battery, the source of the first MOS tube and the collector of the first triode respectively, the second end of the second resistor is electrically connected with the base of the first triode, the base of the second triode and the first end of the third resistor respectively, the second end of the third resistor is electrically connected with the cathode of the first diode, and the anode of the first diode is electrically connected with the high impedance state unit.

[0019] Preferably, the first high impedance state sub-unit comprises a third triode, a fourth resistor and a fifth resistor.

[0020] The first end of the fourth resistor is electrically connected with the master module, the second end of the fourth resistor is electrically connected with the first end of the fifth resistor and the base of the third transistor respectively, the collector of the third transistor is electrically connected with the grounding unit, and the emitter of the third transistor is grounded.

[0021] Preferably, the grounding unit comprises a fourth transistor, a second diode, a third diode, a sixth resistor, a seventh resistor, an eighth resistor and a ninth resistor.

[0022] The anode of the second diode is electrically connected with the collector of the third transistor and the first end of the sixth resistor respectively, the cathode of the second diode is electrically connected with the first end of the seventh resistor, the second end of the seventh resistor is electrically connected with the base of the fourth transistor and the first end of the eighth resistor respectively, the second end of the eighth resistor and the emitter of the fourth transistor are grounded, the second end of the sixth resistor is electrically connected with the input power supply and the first end of the ninth resistor respectively, the second end of the ninth resistor is electrically connected with the collector of the fourth transistor and the cathode of the third diode respectively, and the anode of the third diode is electrically connected with the second high-impedance subunit.

[0023] Preferably, the second high-impedance subunit comprises a fifth transistor and a tenth resistor.

[0024] The base of the fifth transistor is electrically connected with the anode of the third diode and the first end of the tenth resistor respectively, the emitter of the fifth transistor and the second end of the tenth resistor are grounded, and the collector of the fifth transistor is electrically connected with the voltage dividing unit.

[0025] Preferably, the second high-impedance subunit further comprises a first capacitor.

[0026] The first end of the first capacitor is electrically connected with the base of the fifth transistor, and the second end of the first capacitor is grounded.

[0027] To solve the above technical problems, the application provides a high-power high-position fast intelligent on-off switch circuit device, comprising the high-power high-position fast intelligent on-off switch circuit.

[0028] The high-power high-position fast intelligent on-off switch circuit and device has the following beneficial effects: the high-power high-position fast intelligent on-off switch circuit comprises a backup battery, a switch control module and a main control module; the switch control module comprises a high-resistance state unit, a voltage division unit, a main power switch unit and a push-pull unit; the backup battery is electrically connected with the voltage division unit, the main power switch unit and the push-pull unit respectively; the main power switch unit is electrically connected with the push-pull unit and a subsequent circuit respectively; the push-pull unit is electrically connected with the voltage division unit; the voltage division unit is electrically connected with the high-resistance state unit; and the high-resistance state unit is electrically connected with the main control module. When the main control module detects that the backup battery is insufficient, the main control module controls the main power switch unit to be off, so that the backup battery is isolated from the subsequent circuit by the main power switch unit, and the backup battery no longer discharges to the subsequent circuit, thereby preventing over-discharge of the backup battery; when the backup battery needs to supply power to the subsequent circuit, the main control module controls the main power switch unit to be on, so that the backup battery and the subsequent circuit are connected through the main power switch unit, the backup battery can discharge to the subsequent circuit, and the subsequent circuit can work normally. Therefore, the backup power supply can be quickly turned on and off, the demand of the fire-fighting equipment can be accurately responded, the delay or misoperation can be avoided, the current stress and the heating degree of the main power switch unit are reduced, and the service life of the backup power supply is prolonged. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the present application will be further described below with reference to the drawings and embodiments. The drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings according to these drawings without creative labor:

[0030] Figure 1 is a principle block diagram of a high-power high-position fast intelligent on-off switch circuit of a preferred embodiment of the present application;

[0031] Figure 2 is a principle block diagram of a high-power high-position fast intelligent on-off switch circuit of another preferred embodiment of the present application;

[0032] Figure 3 is a circuit diagram of a high-power high-position fast intelligent on-off switch circuit of a preferred embodiment of the present application. DETAILED DESCRIPTION

[0033] The core of the present application is to provide a high-power high-position fast intelligent on-off switch circuit and device, in the present application, when the main control module detects that the standby battery is insufficient, the main control module outputs a first control signal, turns off the main power switch unit, so that the standby battery and the rear circuit are isolated by the main power switch unit, and the standby battery no longer discharges to the rear circuit, preventing over-discharge of the standby battery; when the standby battery needs to supply power to the rear circuit, the main control module outputs a second control signal to turn on the main power switch unit, so that the standby battery and the rear circuit are turned on through the main power switch unit, and the standby battery can discharge to the rear circuit, so that the rear circuit works normally.

[0034] To make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0035] Please refer to Figure 1 , Figure 1 A principle schematic diagram of a high-power high-position fast intelligent on-off switch circuit provided by the present application, comprising a standby battery 1, a switch control module 2 and a main control module 3; the switch control module 2 comprises a high-resistance state unit 31, a voltage division unit 32, a main power switch unit 33 and a push-pull unit 34;

[0036] The standby battery 1 is electrically connected with the voltage division unit 32, the main power switch unit 33 and the push-pull unit 34 respectively, and the main power switch unit 33 is electrically connected with the push-pull unit 34 and the rear circuit respectively.

[0037] The push-pull unit 34 is electrically connected with the voltage division unit 32, the voltage division unit 32 is electrically connected with the high-resistance state unit 31, and the high-resistance state unit 31 is electrically connected with the main control module 3.

[0038] In the prior art, the standby power supply also has some problems, such as: 1) the opening and closing of the standby power supply need to respond quickly and accurately to the needs of the fire-fighting equipment, avoiding delay or misoperation, otherwise it may cause damage or failure of the fire-fighting equipment. 2) The opening and closing of the standby power supply will generate a large instantaneous current, which will cause a large current stress to the switch tube, possibly leading to overheating, damage or shortened life of the switch tube.

[0039] Specifically, the main control module 3 is set as an MCU (Microcontroller Unit; MCU), also known as a single chip microcomputer (Single Chip Microcomputer) or a single chip microcomputer (Single Chip Microcomputer). It is a computer that integrates the frequency and specifications of a central processing unit (CPU) into a single chip, and integrates memory, timers, USB, A / D conversion, UART, PLC, DMA, and even LCD drive circuits into a single chip. In this embodiment, the chip model of the main control module 3 is not specifically limited.

[0040] Specifically, in this embodiment, when the main control module 3 detects that the standby battery 1 is insufficient, the main control module 3 outputs a low-level signal, so that the high-impedance unit 31 works; at the same time, the BAT voltage signal of the standby battery 1 is divided by the voltage dividing unit 32. Due to the presence of the high-impedance unit 31, through reasonable parameter configuration, the voltage at the high-impedance unit 31 can be much higher than the voltage divided by the voltage dividing unit 32, that is, the voltage V1 at the connection between the push-pull unit 34 and the voltage dividing unit can be considered as a high level H close to BAT at this time.

[0041] At the same time, the voltage V1 is connected with the push-pull unit 34, and since V1 is a high level, the push-pull unit 34 is first turned on and then turned off, so that the main power switch unit 33 is turned off, the battery BAT is disconnected from the rear-stage circuit, and the battery BAT no longer discharges to the rear-stage circuit, which can avoid over-discharge of the battery.

[0042] When the standby battery 1 needs to supply power to the rear-stage circuit, the main control module 3 outputs a high-level signal, so that the main power switch unit 33 is turned on, the standby battery 1 and the rear-stage circuit are turned on through the main power switch unit 33, and the rear-stage circuit can be discharged to meet the power supply work of the rear-stage circuit.

[0043] In conclusion, the application provides a high-power high-position fast intelligent on-off switch circuit, which comprises a backup battery 1, a switch control module 2 and a main control module 3.

[0044] On the basis of the above-mentioned embodiments,

[0045] Please refer to Figure 2 , Figure 2 The principle block diagram of another high-power high-position fast intelligent on-off switch circuit provided by the application is shown in the figure.

[0046] As a preferred embodiment, the high-resistance state unit 31 comprises a first high-resistance state subunit 31, a grounding unit 32 and a second high-resistance state unit 31.

[0047] The main control module 3 is electrically connected with the first high-resistance state subunit 31, the first high-resistance state subunit 31 is electrically connected with the grounding unit 32, the grounding unit 32 is electrically connected with the second high-resistance state unit 31 and an input power supply respectively, and the second high-resistance state subunit 33 is electrically connected with the voltage division unit 32.

[0048] Please refer to Figure 3 , Figure 3 The circuit principle diagram of a high-power high-position fast intelligent on-off switch circuit provided by the application is shown in the figure.

[0049] As a preferred embodiment, the first high-resistance state subunit 31 comprises a third transistor Q5, a fourth resistor R8 and a fifth resistor R10.

[0050] The first end of the fourth resistor R8 is electrically connected with the main control module 3, the second end of the fourth resistor R8 is electrically connected with the first end of the fifth resistor R10 and the base of the third transistor Q5 respectively, the collector of the third transistor Q5 is electrically connected with the grounding unit 32, and the emitter of the third transistor Q5 is grounded.

[0051] As a preferred embodiment, the grounding unit 32 comprises a fourth transistor Q6, a second diode D1, a third diode ZD2, a sixth resistor R6, a seventh resistor R9, an eighth resistor R4 and a ninth resistor R5;

[0052] The anode of the second diode D1 is electrically connected with the collector of the third diode ZD2 and the first end of the sixth resistor R6 respectively, the cathode of the second diode D1 is electrically connected with the first end of the seventh resistor R9, the second end of the seventh resistor R9 is electrically connected with the base of the fourth transistor Q6 and the first end of the eighth resistor R4 respectively, the second end of the eighth resistor R4 and the emitter of the fourth transistor Q6 are grounded, the second end of the sixth resistor R6 is electrically connected with the input power supply and the first end of the ninth resistor R5 respectively, the second end of the ninth resistor R5 is electrically connected with the collector of the fourth transistor Q6 and the cathode of the third diode ZD2 respectively, and the anode of the third diode ZD2 is electrically connected with the second high-impedance subunit 33.

[0053] As a preferred embodiment, the second high-impedance subunit 33 comprises a fifth transistor Q4 and a tenth resistor R7;

[0054] The base of the fifth transistor Q4 is electrically connected with the anode of the third diode ZD2 and the first end of the tenth resistor R7 respectively, the emitter of the fifth transistor Q4 and the second end of the tenth resistor R7 are grounded, and the collector of the fifth transistor Q4 is electrically connected with the voltage division unit 32.

[0055] As a preferred embodiment, the second high-impedance subunit 33 further comprises a first capacitor C1;

[0056] The first end of the first capacitor C1 is electrically connected with the base of the fifth transistor Q4, and the second end of the first capacitor C1 is grounded.

[0057] Specifically, in the embodiment, BAT is the battery connection end, which can be the positive output of the battery, or a front-stage circuit or port connected with the positive electrode of the battery; VB is the rear-stage circuit, which can be a load or other conversion circuit; Vcc is the power supply of the circuit, V1 is the B voltage of the transistors Q2 and Q3 in the push-pull unit, VE is the E voltage of the transistors Q2 and Q3 in the push-pull unit, and BAT-Off is the output port of a port or Pin foot of a single-chip microcomputer for controlling the circuit.

[0058] Specifically, when the battery BAT is off and no power is needed to supply to the rear stage, at this time the single-chip microcomputer detects that the voltage of the BAT is less than a certain value, the single-chip microcomputer outputs a low level L of the signal of BAT-Off, and the fourth resistance R8 acts on the B electrode of the third transistor Q5, the C-E of the third transistor Q5 is disconnected, and the C-E of the third transistor Q5 is in a high resistance state.

[0059] At the same time, the power supply Vcc acts on the C electrode of the second diode D1 and the third transistor Q5 through the eighth resistance R4, the positive electrode of the second diode D1 is high H, and the B electrode of the fourth transistor Q6 is connected to the sixth resistance R6 and the voltage dividing resistance R9, and the B electrode of the fourth transistor Q6 is high H, and the C-E of the fourth transistor Q6 is connected to GND.

[0060] At this time, the power supply Vcc is connected to the cathode of the third diode ZD2 through the ninth resistance R5, and at this time the cathode of the third diode ZD2 is connected to the C electrode of the fourth transistor Q6. Since the fourth transistor Q6 is turned on, the cathode of the third diode ZD2 is equivalent to GND, which is low L; since the B electrode of the fifth transistor Q4 is connected to the anode of the third diode ZD2, at this time the B electrode of the fifth transistor Q4 is in a "floating" state, and the C-E of the fifth transistor Q4 is disconnected and in a high resistance state.

[0061] As a preferred embodiment, the main power switch unit 33 includes a first MOS tube Q1 and a first resistance R2;

[0062] The source of the first MOS tube Q1 is electrically connected to the backup battery 1, the voltage dividing unit 32 and the push-pull unit 34 respectively, the drain of the first MOS tube Q1 is electrically connected to the rear stage circuit, the gate of the first MOS tube Q1 is electrically connected to the first end of the first resistance R2, and the second end of the first resistance R2 is electrically connected to the push-pull unit 34.

[0063] As a preferred embodiment, the push-pull unit 34 includes a first transistor Q2 and a second transistor Q3;

[0064] The collector of the first transistor Q2 is electrically connected to the source of the first MOS tube, the backup battery 1 and the voltage dividing unit 32 respectively, the emitter of the first transistor Q2 is electrically connected to the second end of the first resistance R2 and the emitter of the second transistor Q3 respectively, the collector of the second transistor Q3 is grounded, and the base of the first transistor Q2 is electrically connected to the base of the second transistor Q3 and the voltage dividing unit 32 respectively.

[0065] As a preferred embodiment, the voltage dividing unit 32 includes a second resistance R1, a third resistance R3 and a first diode ZD1;

[0066] The first end of the second resistor R1 is electrically connected with the standby battery 1, the source of the first MOS tube and the collector of the first transistor Q1 respectively, the second end of the second resistor R1 is electrically connected with the base of the first transistor Q2, the base of the second transistor Q3 and the first end of the third resistor R3 respectively, the second end of the third resistor R3 is electrically connected with the cathode of the first diode ZD1, and the anode of the first diode ZD1 is electrically connected with the high impedance state unit 31.

[0067] Specifically, from the battery end BAT, the BAT is connected with the C pole of the fifth transistor Q4 through the second resistor R1, the third resistor R3 and the first diode ZD1. The third resistor R3, the first diode ZD1 and the C-E of the fifth transistor Q4 divide the voltage of the battery BAT with the second resistor R1, and since the C-E of the fifth transistor Q4 is in a high impedance state, through reasonable parameter configuration, the voltage V1 shared by the third resistor R3, the first diode ZD1 and the fifth transistor Q4 is much greater than the voltage shared by the second resistor R1, that is, the voltage V1 can be considered as a high level H close to the BAT at this time;

[0068] At the same time, V1 is also connected with the B poles of the first transistor Q2 and the second transistor Q3, the first transistor Q2 is NPN and the second transistor Q3 is PNP, and the first transistor Q2 and the second transistor Q3 are connected in the form of push-pull circuit. Since the B pole voltage V1 of the first transistor Q2 and the second transistor Q3 is high level H, the first transistor Q2 is turned on between C-E, and the second transistor Q3 is turned off between E-C;

[0069] The output of the battery BAT is also connected with the C pole of the first transistor Q2 and the S pole of the first MOS tube Q1. The first MOS tube Q1 is PMOSFET or PNP BJT, and the E poles of the first transistor Q2 and the second transistor Q3 are connected with the G pole of the first MOS tube Q1 through the first resistor R2. The E point voltage VE of the first transistor Q2 and the second transistor Q3 is high level H, which is applied to the G pole of the first MOS tube Q1 through the first resistor R2, and the G pole of the first MOS tube Q1 is also high level H, so the S-D of the first MOS tube Q1 is turned off;

[0070] The first MOS tube Q1 disconnects the battery BAT from the subsequent circuit VB, so that the battery BAT does not discharge to the subsequent circuit, and the over-discharge of the battery can be avoided.

[0071] In summary, when the single-chip microcomputer detects that the battery BAT is insufficient, the BAT-Off outputs low level L, the main switch tube Q1 is turned off, the BAT is isolated from the subsequent circuit by the main switch tube Q1, and the BAT does not discharge to the subsequent circuit, thereby preventing the over-discharge of the BAT.

[0072] Conversely, when the BAT needs to supply power to the rear stage, the BAT-Off output is high level H, the main switch tube Q1 is turned on, the BAT and the rear stage circuit are connected through the main switch tube Q1, and the rear stage circuit can be discharged, thereby meeting the working of the rear stage circuit.

[0073] The application further provides a low quiescent current-based separate standby power-on device, comprising a high-power high-position fast intelligent on-off switch circuit.

[0074] For the high-power high-position fast intelligent on-off switch circuit provided by the application, please refer to the above embodiments, and the application will not be described here.

[0075] It should be noted that in the present specification, the terms "comprising", "including" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0076] The above description of the disclosed embodiments enables a person skilled in the art to implement or use the application. Various modifications to the embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the application. Therefore, the application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high power high position fast intelligent on-off switch circuit, characterized in that, Including a backup battery, a switch control module and a main control module; the switch control module includes a high resistance state unit, a voltage division unit, a main power switch unit and a push-pull unit; The backup battery is respectively connected with the voltage division unit, the main power switch unit and the push-pull unit, and the main power switch unit is respectively connected with the push-pull unit and a subsequent circuit; The push-pull unit is connected with the voltage division unit, the voltage division unit is connected with the high resistance state unit, and the high resistance state unit is connected with the main control module; The high resistance state unit includes a first high resistance state subunit, a grounding unit and a second high resistance state subunit; The main control module is connected with the first high resistance state subunit, the first high resistance state subunit is connected with the grounding unit, the grounding unit is respectively connected with the second high resistance state subunit and an input power supply, and the second high resistance state subunit is connected with the voltage division unit; The main power switch unit includes a first MOS tube and a first resistor; The source of the first MOS tube is respectively connected with the backup battery, the voltage division unit and the push-pull unit, the drain of the first MOS tube is connected with the subsequent circuit, the gate of the first MOS tube is connected with the first end of the first resistor, and the second end of the first resistor is connected with the push-pull unit; The push-pull unit includes a first triode and a second triode; The collector of the first triode is respectively connected with the source of the first MOS tube, the backup battery and the voltage division unit, the emitter of the first triode is respectively connected with the second end of the first resistor and the emitter of the second triode, the collector of the second triode is grounded, and the base of the first triode is respectively connected with the base of the second triode and the voltage division unit.

2. A high power high side fast intelligent on-off switch circuit according to claim 1, characterized in that, The voltage division unit includes a second resistor, a third resistor and a first diode; The first end of the second resistor is respectively connected with the backup battery, the source of the first MOS tube and the collector of the first triode, the second end of the second resistor is respectively connected with the base of the first triode, the base of the second triode and the first end of the third resistor, the second end of the third resistor is connected with the cathode of the first diode, and the anode of the first diode is connected with the high resistance state unit.

3. A high power high side fast intelligent on-off switch circuit according to claim 1, characterized in that, The first high resistance state subunit includes a third triode, a fourth resistor and a fifth resistor; The first end of the fourth resistor is connected with the main control module, the second end of the fourth resistor is respectively connected with the first end of the fifth resistor and the base of the third triode, the collector of the third triode is connected with the grounding unit, and the emitter of the third triode is grounded.

4. A high power high side fast intelligent on-off switch circuit according to claim 3, characterized in that, The grounding unit includes a fourth triode, a second diode, a third diode, a sixth resistor, a seventh resistor, an eighth resistor and a ninth resistor; An anode of the second diode is electrically connected with a collector of the third triode and a first end of the sixth resistor respectively, a cathode of the second diode is electrically connected with a first end of the seventh resistor, a second end of the seventh resistor is electrically connected with a base of the fourth triode and a first end of the eighth resistor respectively, a second end of the eighth resistor and an emitter of the fourth triode are grounded, a second end of the sixth resistor is electrically connected with the input power and a first end of the ninth resistor respectively, a second end of the ninth resistor is electrically connected with a collector of the fourth triode and a cathode of the third diode respectively, and an anode of the third diode is electrically connected with the second high-impedance-state subunit.

5. A high power high side fast intelligent on-off switch circuit according to claim 4, characterized in that, The second high-impedance-state subunit comprises a fifth triode and a tenth resistor. A base of the fifth triode is electrically connected with the anode of the third diode and a first end of the tenth resistor respectively, an emitter of the fifth triode and a second end of the tenth resistor are grounded, and a collector of the fifth triode is electrically connected with the voltage dividing unit.

6. A high power high side fast intelligent on-off switch circuit according to claim 5, characterized in that, The second high-impedance-state subunit further comprises a first capacitor. A first end of the first capacitor is electrically connected with the base of the fifth triode, and a second end of the first capacitor is grounded.

7. A high power high on fast intelligent on-off switch device, characterized in that, A high-power high-position fast intelligent on-off switch circuit comprising any one of claims 1 to 6.

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