Method of forming a semiconductor structure

Abstract

This disclosure provides a method for forming a semiconductor structure. The method includes: forming a first sacrificial layer on the surface of a substrate; fixing the substrate on a chuck; the first sacrificial layer including a plurality of first etched holes, each of which exposes the surface of the substrate; tilting the first sacrificial layer from an initial state by a predetermined angle to form a tilted first sacrificial layer; continuously rotating the tilted first sacrificial layer by the chuck; and forming a first initial support layer on the surface of the continuously rotating tilted first sacrificial layer. In this disclosure, since the formed first initial support layer is only located at the top of the first etched holes and not in the inner wall of the first etched holes, the morphology of the first etched holes will not be destroyed when the hole structure is subsequently formed by etching the first initial support layer, and thus the morphology of the finally formed hole structure will not be destroyed.

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