E-beam evaporation coating method for prograde and retrograde planetary systems

Abstract

A kind of revolution and rotation planetary system electron beam evaporation coating method includes the following steps: S1, provides vacuum evaporation device: vacuum evaporation device includes shell, revolution and rotation planetary system, support platform, electron beam evaporation source and backing plate, the cavity and vacuum hole in the shell interior, revolution and rotation planetary system is located in cavity and includes multiple planetary pot, the rotation axis of each planetary pot is inclined relative to revolution axis, backing plate is used to shield vacuum hole but does not hinder vacuumizing;S2, place single crucible: the crucible is placed in the cavity to be located directly below revolution axis;S3, place the wafer to be coated;S4, vacuumizing;S5, start revolution and rotation planetary system;S6, execute first evaporation: the film thickness reached on the surface of each wafer is half of the expected total film thickness in first evaporation;S7, each wafer posture adjustment 180 degrees: S8, start revolution and rotation planetary system again;S9, execute second evaporation: the film thickness reached in second evaporation is half of the expected total film thickness.

Description

Technical Field

[0001] This disclosure relates to the field of vacuum evaporation deposition, and more specifically to a method for electron beam evaporation deposition of a planetary system. Background Technology

[0002] Currently, MEMS chip packaging technology can be divided into chip-level packaging, system-level packaging, and wafer-level packaging. Chip-level packaging operates on a single chip, resulting in high cost and low efficiency. System-level packaging integrates chips with different functions on the same substrate; however, due to the use of multi-layered BT substrates during packaging and testing, coupled with the assembly of various chips and the testing of the final product, its cost remains high. Wafer-level packaging operates on the entire wafer and is currently the most cutting-edge technology in the field of device packaging, characterized by high efficiency and low cost.

[0003] In wafer-level packaging, a single cap wafer structure typically includes a silicon substrate, a cap cavity, a bonding ring, a seed layer, and a solder layer. The seed layer is a metal film layer such as titanium or copper, while the solder layer is a metal film layer such as copper, gold, or tin. These metal films are typically deposited using an electron beam evaporation deposition machine.

[0004] Existing vapor deposition machines typically use electron beam evaporation of the coating material in the crucible to deposit coatings on wafers mounted on a planetary system.

[0005] For wafer-level packaging, the uniformity of film thickness is reflected in the uniformity of resistance. Film thickness uniformity can significantly affect the peeling process conditions, leading to uneven or even incomplete peeling. For optical thin films produced by electron beam evaporation deposition using a planetary system, film thickness uniformity has an even greater impact on the consistency of the film's optical performance. This is because the concave surface of the planetary vessel in the planetary system means that the wafer loaded on the vessel is not horizontally positioned directly above the crucible, and the planetary vessel's revolution axis and rotation axis are not parallel (i.e., the plane where the edge of the planetary vessel is located is tilted relative to the horizontal plane). As a result, the coating formed by electron beam evaporation from the same crucible and deposition onto the same wafer undergoing simultaneous revolution and rotation will produce inhomogeneities on the same wafer. For electron beam evaporation coating of rotating planetary systems, the industry typically uses non-cosine partial thickness distribution theory to control electron beam evaporation to achieve film thickness uniformity. (See: Research on film thickness error in electron beam evaporation coating of rotating structures, Bao Ganghua et al., Progress in Lasers & Optoelectronics, Vol. 58, June 2021; Analysis of film thickness uniformity in planetary fixtures, Zhu Yuanqiang, Vacuum VACUMM, Vol. 47, No. 5, September 2010). However, these conventional methods make controlling film thickness uniformity very complex and difficult in actual production. Therefore, it is necessary to develop a simple and effective method for controlling film thickness uniformity in electron beam evaporation coating of rotating planetary systems suitable for practical production. Summary of the Invention

[0006] In view of the problems existing in the background art, the purpose of this disclosure is to provide an electron beam evaporation coating method for a planetary system with rotation, which is suitable for simple and effective control of film thickness uniformity in actual production.

[0007] Therefore, a method for electron beam evaporation coating of a rotating planetary system includes the following steps:

[0008] S1, providing a vacuum evaporation apparatus: The vacuum evaporation apparatus includes a shell, a planetary system, a support platform, an electron beam evaporation source, and a liner. The shell has a chamber inside and a vacuum hole is provided at the bottom near the support platform. The chamber is at room temperature before the electron beam evaporation source is operated. The planetary system is located inside the chamber and includes multiple planetary pots. Each planetary pot has a concave pot surface and an annular pot rim. The rotation axis of each planetary pot is inclined relative to the revolution axis. Each planetary pot can revolve around the revolution axis and can rotate on its own rotation axis. The support platform is located inside the chamber and below the planetary system. The support platform is used to support the electron beam evaporation source, the liner, and the crucible. The liner is located on the support platform, below the planetary system, and inside the vacuum hole of the shell. The liner is used to block the vacuum hole in the vertical, horizontal, and back-and-forth directions without hindering the vacuuming operation of the vacuum hole.

[0009] S2, Place a single crucible: Place a single crucible in the chamber so that the crucible is directly below the orbital axis of the planetary system. The crucible is used to hold the solid coating material for electron beam evaporation deposition.

[0010] S3, Place the wafers to be coated: Fix multiple circular wafers to be coated on each planetary crucible of the planetary system. Each wafer is a circular piece of equal thickness with two flat sides. The surface of each wafer to be coated faces the crucible. The centers of the multiple wafers on each planetary crucible are located on the same circle surrounding the center of the planetary crucible and are evenly distributed.

[0011] S4, Vacuuming: Evacuate the chamber through the vacuum port and maintain the chamber vacuum level below 2.0 × 10⁻⁶. - 4 Pa;

[0012] S5, Start the planetary system: Start the planetary system so that each planetary vessel revolves around the revolution axis while rotating around its own rotation axis;

[0013] S6, Perform the first evaporation: While maintaining the aforementioned vacuum range in the chamber, start the electron beam evaporation source so that the thermal electron beam generated by the electron beam evaporation source bombards the surface of the solid coating in the crucible. The coating on the surface of the solid coating evaporates and is deposited on the surface of the wafers on each planetary pot that revolves around the revolution axis and rotates around their own rotation axis. The first evaporation achieves a film thickness of half the expected total film thickness on the surface of each wafer.

[0014] S7, Adjust the orientation of each wafer by 180 degrees: After the first evaporation is completed, stop the electron beam evaporation source and stop the planetary system. Swap the alignment notches of each wafer on each planetary pot with the opposite positions that are 180 degrees away from the alignment notches on the same diameter of the wafer.

[0015] S8, restart the planetary system: restart the planetary system so that each planetary vessel revolves around its orbital axis while rotating around its own rotational axis.

[0016] S9, Perform the second evaporation: While maintaining the aforementioned vacuum range in the chamber, restart the electron beam evaporation source to perform a second evaporation on the surface of the film formed by the first evaporation. The film thickness achieved by the second evaporation deposition is half of the expected total film thickness.

[0017] The beneficial effects of this disclosure are as follows.

[0018] In the electron beam evaporation coating method for a planetary system of revolution and rotation disclosed herein, since the vacuum hole is located at the bottom of the shell near the support platform, this position is radially outside the maximum orbital path of multiple planetary pots. Thus, the vacuum hole is far from the crucible. The liner blocks the vacuum hole in the vertical, front-back, and left-right directions without hindering its vacuuming operation (i.e., the liner 5 separates the vacuum hole from the crucible). This allows for dynamic maintenance of a vacuum level in the chamber of less than 2.0 × 10⁻⁶. -4 In the case of Pa, the flow of air in the chamber that maintains the vacuum process has minimal or almost no impact on the path of the plating material emitted from the crucible by the electron beam toward the planetary pot, thus simplifying the control of the plating material emitted from the crucible by the electron beam toward the planetary pot 21 in actual production.

[0019] In the electron beam evaporation coating method for a planetary system disclosed herein, each wafer is a flat, uniformly thick disc with both sides planar, and the surface to be coated on each wafer faces the crucible. The centers of multiple wafers on each planetary cauldron are located on the same circle surrounding the center of the cauldron and are evenly spaced. By dividing the expected total film thickness into two evaporation processes, each evaporation depositing half of the expected total film thickness, and ensuring that the alignment notches and opposite sites on the same diameter of the wafer are exactly interchanged during the two evaporation processes, this two-stage evaporation method with the aforementioned single crucible and vacuum hole configuration improves the uniformity of the final expected total film thickness. This simplifies and effectively controls film thickness uniformity in actual production, thereby improving the performance and yield of the coated wafer as a product. Furthermore, this method eliminates the need for additional equipment or process gases, allowing the entire process to be completed within the same vacuum evaporation apparatus. This also simplifies and effectively controls film thickness uniformity in actual production while reducing costs. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the vacuum evaporation apparatus used in the electron beam evaporation coating method for a planetary system according to the present disclosure.

[0021] Figure 2 yes Figure 1 A plan view of a single planetary pot of a vacuum evaporation apparatus, together with the wafer, viewed from the concave pot side.

[0022] Figure 3 This is a plan view of a single planetary pot along with a wafer, as seen from the concave pot side, in Example 1, wherein, for ease of testing and clarity of explanation, only one wafer is placed at the bottom of a planetary pot.

[0023] Figure 4 It is aimed at Figure 3 The membrane resistance MAP diagram of Example 1.

[0024] Figure 5A This is a plan view of a single planetary pan along with the wafer, as seen from the concave pan side, in Example 2. For ease of testing and clarity of explanation, only one wafer is placed at the very bottom of a single planetary pan. Figure 5A The left image corresponds to the first vapor deposition, and the dashed line shows the adjacent position of the wafer as the planetary pan rotates. Figure 5A The right image corresponds to the second vapor deposition.

[0025] Figure 5B This is the MAP diagram of film resistance in Example 2.

[0026] Figure 6 This is the MAP diagram of film resistance for Comparative Example 1.

[0027] Figure 7A This is a plan view of a single planetary pot along with a wafer, taken from the concave pot side, as shown in Comparative Example 2. For ease of testing and clarity of explanation, only one wafer is placed at the very bottom of a planetary pot.

[0028] Figure 7B This is the MAP diagram of film resistance for Comparative Example 2.

[0029] Figure 8A This is a plan view of a single planetary pot along with a wafer, as seen from the concave pot side, of Comparative Example 3, wherein, for ease of testing and clarity of illustration, only one wafer is placed at the very bottom of a planetary pot.

[0030] Figure 8B This is the MAP diagram of film resistance for Comparative Example 3.

[0031] Figure 9A This is a plan view of a single planetary pot along with a wafer, as seen from the concave pot side, in Example 4. For ease of testing and clarity of illustration, only one wafer is placed at the very bottom of a planetary pot. Figure 9A The top left image corresponds to the first vapor deposition. Figure 9A The upper right image corresponds to the second vapor deposition. Figure 9A The lower left image corresponds to the third vapor deposition. Figure 9A The lower right image corresponds to the fourth vapor deposition.

[0032] Figure 9B This is the MAP diagram of film resistance for Comparative Example 4.

[0033] Figure 10A This is a plan view of a single planetary pan along with a wafer, as seen from the concave pan side, according to Scale 5. For ease of testing and clarity of illustration, only one wafer is placed at the very bottom of a planetary pan. Figure 10A The top left image corresponds to the first vapor deposition. Figure 10A The upper right image corresponds to the second vapor deposition. Figure 10A The lower left image corresponds to the third vapor deposition. Figure 10A The lower right image corresponds to the fourth vapor deposition.

[0034] Figure 10B This is the MAP diagram of film resistance for Comparative Example 5.

[0035] The reference numerals in the attached figures are explained as follows:

[0036] 100 Vacuum Evaporation Unit d1 Vertical Distance

[0037] D1 (vertical direction) d2 (radial distance)

[0038] Angle θ between front and rear directions of D2

[0039] D3 Left and right direction 3 support platforms

[0040] 1 shell 4 electron beam evaporation source

[0041] 11 chambers, 5 liners

[0042] 12 vacuum holes, 6 mounting rings

[0043] 2-rotation planetary system with 61 lugs

[0044] 21 planetary cookers, 200 crucibles

[0045] 211 slab surface 300 wafer

[0046] 212 pot rim 300a alignment notch

[0047] L1 revolution axis 300b opposite position

[0048] L2's rotation axis O2 center

[0049] O1 center d3 distance Detailed Implementation

[0050] The accompanying drawings illustrate embodiments of this disclosure, and it will be understood that the disclosed embodiments are merely examples of this disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be construed as limiting, but are intended only as the basis for the claims and as an illustrative basis to teach those skilled in the art how to implement this disclosure in various ways.

[0051] [Electron Beam Evaporation Coating Method for Planetary Systems with Rotation]

[0052] Reference Figure 1 and Figure 2 The electron beam evaporation coating method for a planetary system according to this disclosure includes the following steps:

[0053] S1, a vacuum evaporation apparatus 100 is provided: The vacuum evaporation apparatus 100 includes a housing 1, a planetary system 2, a support platform 3, an electron beam evaporation source 4, and a liner 5. The housing 1 has a chamber 11 inside and a vacuum hole 12 is provided at the bottom near the support platform 3. The chamber 11 is at room temperature before the electron beam evaporation source 4 is put into operation. The planetary system 2 is located in the chamber 11 and includes multiple planetary pots 21. Each planetary pot 21 has a concave pot surface 211 and an annular pot rim 212. The rotation axis L2 of each planetary pot 21 is inclined relative to the revolution axis L1. Each planetary vessel 21 is inclined and can revolve around the revolution axis L1 and rotate on its own rotation axis L2. The support platform 3 is located inside the chamber 11 and below the planetary system 2. The support platform 3 is used to support the electron beam evaporation source 4, the liner 5 and the crucible 200. The liner 5 is located on the support platform 3, below the planetary system 2 and inside the vacuum hole 12 of the shell 1. The liner 5 is used to block the vacuum hole 12 in the vertical direction D1, the front-back direction D2 and the left-right direction D3, but does not hinder the vacuuming operation of the vacuum hole 12.

[0054] S2, Place a single crucible 200: Place a single crucible 200 in the chamber 11 so that the crucible 200 is directly below the revolution axis L1 of the planetary system 2. The crucible 200 is used to hold the solid coating material for electron beam evaporation coating.

[0055] S3, Place the wafers 300 to be coated: Fix multiple circular wafers 300 to be coated on each planetary pot 21 of the planetary system 2. Each wafer 300 is a circular piece of equal thickness with two flat sides. The surface of each wafer 300 to be coated faces the crucible 200. The center O2 of the multiple wafers 300 on each planetary pot 21 is located on the same circle around the center O1 of the planetary pot 21 and is distributed at equal intervals.

[0056] S4, Vacuuming: Vacuuming is performed on chamber 11 through vacuum port 12, and the vacuum level in chamber 11 is maintained at less than 2.0 × 10⁻⁶. -4 Pa;

[0057] S5, Start the planetary system 2: Start the planetary system 2 so that each planetary pot 21 revolves around the revolution axis L1 and rotates around its own rotation axis L2.

[0058] S6, Perform the first evaporation: While maintaining the aforementioned vacuum range in the chamber 11, start the electron beam evaporation source 4 so that the thermionic electron beam generated by the electron beam evaporation source 4 bombards the surface of the solid plating material in the crucible 200. The plating material on the surface of the solid plating material evaporates and is deposited on the surface of the wafers 300 facing the crucible 200 on each planetary pot 21 that revolves around the revolution axis L1 and rotates around its own rotation axis L2. The first evaporation deposits on the surface of each wafer 300 to achieve a film thickness of half of the expected total film thickness.

[0059] S7, adjust the orientation of each wafer 300 by 180 degrees: After the first evaporation is completed, stop the electron beam evaporation source 4 and stop the planetary system 2, and swap the alignment notch 300a of each wafer 300 on each planetary pot 21 with the opposite position 300b which is 180 degrees away from the alignment notch 300a on the same diameter of the wafer 300.

[0060] S8, restart the planetary system 2: restart the planetary system 2 so that each planetary pot 21 revolves around the revolution axis L1 and rotates around its own rotation axis L2.

[0061] S9, Perform the second vapor deposition: While maintaining the aforementioned vacuum range in chamber 11, the electron beam evaporation source 4 is restarted to perform a second vapor deposition on the surface of the film formed by the first vapor deposition. The film thickness achieved by the second vapor deposition is half of the expected total film thickness.

[0062] In the electron beam evaporation coating method for a planetary system disclosed herein, a single crucible 200 is used and the crucible 200 is located directly below the orbital axis L1 of the planetary system 2, which simplifies the control of the coating material emitted towards the planetary pot 21 by the electron beam evaporation from the crucible 200 in actual production.

[0063] In the electron beam evaporation coating method for a planetary system of revolution and rotation disclosed herein, since the vacuum hole 12 is located at the bottom of the shell 1 near the support platform 3, this position is radially outside the maximum orbital trajectory of the multiple planetary pots 21. Thus, the vacuum hole 12 is far from the crucible 200. The liner 5 blocks the vacuum hole 12 in the vertical direction D1, the front-back direction D2, and the left-right direction D3, but does not hinder the vacuuming operation of the vacuum hole 12 (i.e., the liner 5 separates the vacuum hole 12 from the crucible 200). The vacuum degree of the chamber 11 is dynamically maintained at less than 2.0 × 10⁻⁶ through the vacuum hole 12. -4 In the case of Pa, the flow of air in the chamber that maintains the vacuum process has minimal or almost no impact on the path of the plating material emitted from the crucible 200 towards the planetary pot 21 by the electron beam evaporation, thereby simplifying the control of the plating material emitted from the crucible 200 towards the planetary pot 21 in actual production.

[0064] In the electron beam evaporation coating method for a planetary system disclosed herein, each wafer 300 is a circular piece of equal thickness with two planar surfaces, and the surface to be coated on each wafer 300 faces the crucible 200. The centers O2 of multiple wafers 300 on each planetary pot 21 are located on the same circle surrounding the center O1 of the planetary pot 21 and are evenly distributed. By dividing the expected total film thickness into two evaporation processes, each evaporation depositing half of the expected total film thickness, and ensuring that the alignment notches 300a and opposite positions 300b on the same diameter of the wafer 300 are exactly interchanged during the two evaporation processes, under the aforementioned single crucible setting and vacuum hole 12 setting, this two-stage evaporation method with the wafer 300 orientation can improve the uniformity of the coating under the final expected total film thickness. Therefore, the film thickness uniformity control is simple and effective in actual production, thereby improving the performance and yield of the coated wafer as a product. Furthermore, this method eliminates the need for additional equipment or process gases, and can be completed within the same vacuum evaporation apparatus 100. This also makes film thickness uniformity control simple and effective in actual production, while reducing costs.

[0065] In one example, refer to Figure 2 The alignment notch 300a of each wafer 300 and its opposite point 300b, located at 180 degrees to the alignment notch 300a on the same diameter of the wafer 300, are situated on the radius of the corresponding planetary cooker 21, which passes through the center O1 of the planetary cooker 21 and the center O2 of the wafer 300. In other words, the diameter of the wafer 300 where the alignment notch 300a and the opposite point 300b are located coincides with the radius of the planetary cooker 21, which passes through the center O1 of the planetary cooker 21 and the center O2 of the wafer 300. This allows for a simpler and more convenient positioning of each wafer 300.

[0066] In one example, refer to Figure 5A The alignment notch 300a and the opposite position 300b, located at 180 degrees to the alignment notch 300a on the same diameter of the wafer 300, are perpendicular to the radius of the corresponding planetary cooker 21's center O1 and the center O2 of the wafer 300. In other words, the diameter of the wafer 300 where the alignment notch 300a and the opposite position 300b are located is perpendicular to the radius of the planetary cooker 21's center O1 and the center O2 of the wafer 300. This further improves the film thickness uniformity in actual production.

[0067] Reference Figure 1 In one example, in step S1, the angle θ between the rotation axis L2 and the revolution axis L1 of each planetary pot 21 is 30°.

[0068] Reference Figure 1In one example, in step S1, the diameter of each planetary pot 21 is 620mm, the distance d1 between the center O1 of each planetary pot 21 and the support platform 3 in the vertical direction D1 is 250mm, and the radial distance d2 between the center O1 of each planetary pot 21 and the revolution axis L1 is 180mm.

[0069] In step S2, the solid plating material is a metallic plating material. The metallic plating material may be, but is not limited to, titanium, nickel, copper, gold, or tin.

[0070] Reference Figure 2 In one example, in step S3, the diameter of each wafer 300 is 200 mm; the distance d3 between the center O2 of each wafer 300 and the center O1 of the corresponding planetary pot 21 is 220 mm; and the radius of curvature of the position on the pot surface 211 of each planetary pot 21 corresponding to the center O2 of each wafer 300 is 530 mm.

[0071] In one example, in step S4, the vacuum level of chamber 11 is maintained at 5.0 × 10⁻⁶. -5 Pa.

[0072] In one example, in steps S5, S6, S8 and S9, each planetary pot 21 revolves clockwise around the revolution axis L1 and rotates counterclockwise around the rotation axis L2.

[0073] In one example, in steps S5, S6, S8, and S9, the rotational speed ratio of each planetary pot 21 to its revolution speed is 6.5. Further, in another example, the rotational speed of each planetary pot 21 is 52 rpm, and the revolutional speed of each planetary pot 21 is 8 rpm.

[0074] In one example, in step S2, the metal plating material is titanium; in steps S6 and S9, the expected total film thickness is... In steps S6 and S9, the rated voltage of the electron beam evaporation source 4 is 10KV, the power of the electron beam evaporation source 4 is 2800W, and the deposition rate is... The deposition time is half of the expected total film thickness divided by the deposition rate.

[0075] In one example, to increase the ease of positioning wafer 300, such as Figure 2As shown, the vacuum evaporation apparatus 100 may further include a mounting ring 6. The mounting ring 6 has two lugs 61 corresponding to the alignment notch 300a and the opposite position 300b on the same diameter of the wafer 300. The two lugs 61 can be fixed to the corresponding planetary pot 21 by a fixing structure (e.g., pin and hole or screw and hole). The corresponding wafer 300 is held in the mounting ring 6 such that the alignment notch 300a and the opposite position 300b are aligned with the two lugs 61 respectively, so that the alignment notch 300a of each wafer 300 and the opposite position 300b located at 180 degrees to the alignment notch 300a on the same diameter of the wafer 300 are positioned in the corresponding planetary pot 21.

[0076] like Figure 2 As shown, in one example, the alignment notches 300a of all wafers 300 on the same planetary dish 21 are all oriented toward the center O1 of the planetary dish 21.

[0077] [test]

[0078] In Examples 1-2 and Comparative Examples 1-5, for ease of testing and clarity of explanation, only one wafer 300 is placed at the bottom of a planetary pot 21. Furthermore, since the mounting ring 6 is used to mount the wafer 300, the peripheral portion of the wafer 300 is obscured, and a portion of the periphery is removed from the film resistance map. Figure 4 (Example 1) Figure 5B (Example 2) Figure 6 (Comparative Example 1) Figure 7B (Comparative Example 2) Figure 8B (Comparative Example 3) Figure 9B (Comparative Example 4) Figure 10B In (Comparative Example 5), the diameter of the film resistance MAP is slightly smaller than the diameter of the wafer 300, and the resistance unit on the right side of the film resistance MAP is ohms.

[0079] Example 1

[0080] The electron beam evaporation coating method for a planetary system with rotational orbital properties employs the following steps:

[0081] S1, provides a vacuum evaporation apparatus 100 (refer to...) Figure 1 and Figure 2The vacuum evaporation apparatus 100 includes a housing 1, a planetary system 2, a support platform 3, an electron beam evaporation source 4, and a liner 5. The housing 1 has a chamber 11 inside and a vacuum port 12 near the bottom of the support platform 3. The chamber 11 is at room temperature before the electron beam evaporation source 4 operates. The planetary system 2 is located inside the chamber 11 and includes three planetary pots 21. Each planetary pot 21 has a concave pot surface 211 and an annular rim 212. The rotation axis L2 of each planetary pot 21 is inclined relative to the revolution axis L1, and the angle θ between the rotation axis L2 and the revolution axis L1 is 30°. Each planetary pot 21 can revolve around the revolution axis L1 and rotate on its own rotation axis L2. The support platform 3 is located within the chamber. The planetary pot 21 is located inside and below the planetary system 2. The diameter of each planetary pot 21 is 620 mm. The distance d1 between the center O1 of each planetary pot 21 and the support platform 3 in the vertical direction D1 is 250 mm. The radial distance d2 between the center O1 of each planetary pot 21 and the revolution axis L1 is 180 mm. The support platform 3 is used to support the electron beam evaporation source 4, the liner 5 and the crucible 200. The liner 5 is located on the support platform 3, below the planetary system 2 and inside the vacuum hole 12 of the shell 1. The liner 5 is used to block the vacuum hole 12 in the vertical direction D1, the front-back direction D2 and the left-right direction D3 without hindering the vacuuming operation of the vacuum hole 12. The electron beam evaporation source 4 is commercially available from ULVAC ESZ-R in Japan.

[0082] S2, Place a single crucible 200: Place a single crucible 200 in the chamber 11 so that the crucible 200 is directly below the revolution axis L1 of the planetary system 2. The crucible 200 is used to hold the solid coating material for electron beam evaporation coating. The metal coating material is titanium.

[0083] S3, Place the wafer 300 to be coated: Fix a circular wafer 300 to be coated onto the mounting ring 6 of a planetary dish 21 of the planetary system 2. Figure 3The wafer 300 is a circular wafer of equal thickness with two flat surfaces. The surface of the wafer 300 to be plated faces the crucible 200. The alignment notch 300a of the wafer 300 and the opposite point 300b, which is 180 degrees away from the alignment notch 300a on the same diameter of the wafer 300, are located on the same radius of the corresponding planetary cooker 21. The alignment notch 300a of the wafer 300 on the planetary cooker 21 faces the center O1 of the planetary cooker 21. The center of the mounting ring 6 on each planetary cooker 21 corresponding to the multiple wafers 300 is... On the same circle surrounding the center O1 of the planetary pot 21 and evenly distributed, each mounting ring 6 has two lugs 61 corresponding to the alignment notch 300a and the opposite position 300b on the same diameter of the wafer 300. The diameter of the wafer 300 is 200 mm, the distance d3 between the center O2 of the wafer 300 and the center O1 of the corresponding planetary pot 21 is 220 mm, and the radius of curvature of the position on the pot surface 211 of the planetary pot 21 corresponding to the center O2 of the wafer 300 is 530 mm.

[0084] S4, Vacuuming: Vacuuming is performed on chamber 11 through vacuum port 12, and the vacuum level of chamber 11 is maintained at 5.0 × 10⁻⁶. -5 Pa;

[0085] S5, Start the planetary system 2: Start the planetary system 2 so that each planetary pot 21 revolves clockwise around the revolution axis L1 and rotates counterclockwise around its own rotation axis L2. The rotation speed of each planetary pot 21 is 52 rpm, and the revolution speed of each planetary pot 21 is 8 rpm.

[0086] S6, Perform the first vapor deposition: While maintaining the aforementioned vacuum range in chamber 11, start the electron beam evaporation source 4 so that the thermionic electron beam generated by the electron beam evaporation source 4 bombards the surface of the solid plating material in the crucible 200. The plating material on the surface of the solid plating material evaporates and is deposited on the surface of the wafer 300 facing the crucible 200, which is on the planetary pot 21 that revolves clockwise around the revolution axis L1 and rotates counterclockwise around its own rotation axis L2. The first vapor deposition achieves a film thickness of half the expected total film thickness on the surface of the wafer 300. The expected total film thickness is... The rated voltage of electron beam evaporation source 4 is 10KV, the power of electron beam evaporation source 4 is 2800W, and the deposition rate is... The deposition time is half of the expected total film thickness divided by the deposition rate;

[0087] S7, wafer 300 orientation adjustment by 180 degrees: After the first evaporation is completed, stop the electron beam evaporation source 4 and stop the planetary system 2. Swap the alignment notch 300a of the wafer 300 on the planetary pot 21 with the opposite position 300b, which is 180 degrees away from the alignment notch 300a on the same diameter of the wafer 300. That is, at this time, the opposite position 300b of the wafer 300 is located at the position of the previous alignment notch 300a, and the alignment notch 300a is located at the position of the previous opposite position 300b.

[0088] S8, restart the planetary system 2: restart the planetary system 2 so that each planetary pot 21 revolves clockwise around the revolution axis L1 and rotates counterclockwise around its own rotation axis L2. The rotation speed of each planetary pot 21 is 52 rpm, and the revolution speed of each planetary pot 21 is 8 rpm.

[0089] S9, Perform the second evaporation: While maintaining the aforementioned vacuum range in chamber 11, restart the electron beam evaporation source 4 to perform a second evaporation on the surface of the film formed in the first evaporation. The film thickness achieved by the second evaporation is half of the expected total film thickness. The rated voltage of the electron beam evaporation source 4 is 10KV, the power of the electron beam evaporation source 4 is 2800W, and the deposition rate is... The deposition time is half of the expected total film thickness divided by the deposition rate.

[0090] Example 2

[0091] Except in step S3, where the alignment notch 300a of wafer 300 and the opposite position 300b, which is 180 degrees away from the alignment notch 300a on the same diameter of wafer 300, are not on the same radius of the corresponding planetary pot 21 (i.e., in Example 2, the alignment notch 300a and the opposite position 300b on the same diameter of wafer 300 are perpendicular to the radius of the planetary pot 21's center O1 and the center O2 of wafer 300, i.e., the diameter of wafer 300 where the alignment notch 300a and the opposite position 300b are located is perpendicular to the radius of the planetary pot 21's center O1 and the center O2 of wafer 300), refer to Figure 5A Except for the first vapor deposition, the rest is the same as in Example 1. Figure 5A The left image shows the second vapor deposition. Figure 5AThe right figure shows that, in Example 2, two vapor depositions are used to predict the total film thickness. However, in Example 2, the initial orientation of the wafer 300 is such that the alignment notch 300a and the opposite site 300b are on the same diameter of the wafer 300 but are not located on the radius of the planetary pot 21 that passes through the center O1 of the planetary pot 21 and the center O2 of the wafer 300 (i.e., the diameter of the wafer 300 where the alignment notch 300a and the opposite site 300b are located is perpendicular to the radius of the planetary pot 21 that passes through the center O1 of the planetary pot 21 and the center O2 of the wafer 300). The alignment notch 300a and the opposite site 300b are swapped during the two vapor depositions.

[0092] Comparative Example 1

[0093] Except for not performing steps S7 to S9 and the film thickness achieved by the first vapor deposition on the surface of wafer 300 in step S6 being the expected total film thickness, the rest is the same as in Example 1. That is, Comparative Example 1 uses a single vapor deposition to achieve the expected total film thickness, and the initial orientation of wafer 300 in Comparative Example 1 is the same as the initial orientation of wafer 300 in Example 1 (i.e., referring to the same initial orientation). Figure 3 ).

[0094] Comparative Example 2

[0095] Except for the opposite point 300b of the wafer 300 on the planetary pot 21 in step S3, which faces the center O1 of the planetary pot 21 (refer to...) Figure 7A In step S6, the first vapor deposition on the surface of wafer 300 achieves the expected total film thickness, and steps S7 to S9 are not performed; otherwise, it is the same as in Example 1. That is, Comparative Example 2 uses a single vapor deposition to achieve the expected total film thickness, but the initial orientation of wafer 300 in Comparative Example 2 is exactly the opposite of the initial orientation of wafer 300 in Comparative Example 1 (i.e., the control). Figure 7A and Figure 3 ).

[0096] Comparative Example 3

[0097] Except in step S3, where the alignment notch 300a of wafer 300 and the opposite position 300b, which is 180 degrees away from the alignment notch 300a on the same diameter of wafer 300, are not on the same radius of the corresponding planetary pot 21 (i.e., in Comparative Example 3, the alignment notch 300a and the opposite position 300b on the same diameter of wafer 300 are perpendicular to the radius of the planetary pot 21's center O1 and the center O2 of wafer 300, i.e., the diameter of wafer 300 where the alignment notch 300a and the opposite position 300b are located is perpendicular to the radius of the planetary pot 21's center O1 and the center O2 of wafer 300), refer to Figure 8AIn step S6, the first vapor deposition on the surface of wafer 300 achieves the expected total film thickness. Except for steps S7 to S9, the rest is the same as in Example 1. That is, Comparative Example 3 uses a single vapor deposition to achieve the expected total film thickness. However, in Comparative Example 3, the initial orientation of wafer 300 is such that the alignment notch 300a and the opposite site 300b on the same diameter of wafer 300 are not located on the radius of the planetary pot 21 passing through the center O1 of planetary pot 21 and the center O2 of wafer 300 (i.e., the diameter of wafer 300 where the alignment notch 300a and the opposite site 300b are located is perpendicular to the radius of the planetary pot 21 passing through the center O1 of planetary pot 21 and the center O2 of wafer 300).

[0098] Comparative Example 4

[0099] Except in step S3, the alignment notch 300a of wafer 300 and the opposite position 300b, which is 180 degrees away from the alignment notch 300a on the same diameter of wafer 300, are not on the same radius of the corresponding planetary pot 21 (i.e., in Comparative Example 4, the alignment notch 300a and the opposite position 300b, which are on the same diameter of wafer 300, are perpendicular to the radius of the planetary pot 21, which passes through the center O1 of the planetary pot 21, and the center O2 of the wafer 300). Figure 9A (See the upper left image). In step S6, the first vapor deposition on the surface of wafer 300 achieves a film thickness of one-quarter of the expected total film thickness, and the deposition time is one-quarter of the expected total film thickness divided by the deposition rate. In step S7, the alignment notch 300a and the opposite site 300b of wafer 300, which are on the same diameter of wafer 300, are rotated 90 degrees clockwise around the center O2 of the wafer. Figure 9A (See the upper right image). In step S9, the second evaporation deposition achieves a film thickness of one-quarter of the expected total film thickness. After achieving half of the expected total film thickness, the modified steps S7 to S9 are repeated twice (i.e., compared to the control). Figure 9A The lower left image shows that the film thickness achieved during the third evaporation deposition was one-quarter of the expected total film thickness. (Comparison) Figure 9A Except for the fourth evaporation deposition shown in the lower right figure, which achieved a film thickness of one-quarter of the expected total film thickness, the rest is the same as in Example 1.

[0100] In other words, in Comparative Example 4, a four-step method is used to achieve the expected total film thickness, with each deposition representing one-quarter of the expected total film thickness. In the first deposition, the alignment notch 300a on wafer 300 and its opposite point 300b, located 180 degrees to the alignment notch 300a on the same diameter of wafer 300, are not located on the same radius of the corresponding planetary pot 21 (i.e., the alignment notch 300a and the opposite point 300b, located on the same diameter of wafer 300, are perpendicular to the radii of the planetary pot 21's center O1 and the center O2 of wafer 300). Figure 9A(See the top left image). During the second evaporation, the alignment notch 300a and the opposite site 300b of wafer 300 rotate 90 degrees clockwise around the center O2 of wafer 300 relative to their orientation during the first evaporation. Figure 9A (See the upper right image). During the third vapor deposition, the alignment notch 300a and the opposite site 300b of wafer 300 rotate 90 degrees clockwise around the center O2 of wafer 300 relative to their orientation during the second vapor deposition. Figure 9A (See the lower left image). During the fourth evaporation, the alignment notch 300a and the opposite site 300b of wafer 300 rotate 90 degrees clockwise around the center O2 of wafer 300 relative to their positions during the third evaporation. Figure 9A (The image at the bottom right).

[0101] Comparative Example 5

[0102] Comparative Example 5 is basically the same as Comparative Example 4, also using a four-step method to achieve the expected total film thickness, with each deposition being one-quarter of the expected total film thickness. However, in the first deposition, the alignment notch 300a on wafer 300 and the opposite site 300b, which is 180 degrees away from the alignment notch 300a on the same diameter of wafer 300, are not on the same radius of the corresponding planetary pot 21 (i.e., the alignment notch 300a and the opposite site 300b, which are on the same diameter of wafer 300, are perpendicular to the radius of the planetary pot 21, which passes through the center O1 of the planetary pot 21, and the center O2 of the wafer 300). Figure 10A The top left image, and Figure 9A (The orientations are the same), during the second evaporation, the alignment notch 300a and the opposite site 300b of wafer 300 rotate 180 degrees around the center O2 of wafer 300 relative to their orientations during the first evaporation. Figure 10A (See the upper right image). During the third vapor deposition, the alignment notch 300a and the opposite site 300b of wafer 300 rotate 90 degrees counterclockwise around the center O2 of wafer 300 relative to their orientation during the second vapor deposition. Figure 10A (See the lower left image). During the fourth vapor deposition, the alignment notch 300a and the opposite site 300b of wafer 300 rotate 180 degrees around the center O2 of wafer 300 relative to their positions during the third vapor deposition. Figure 10A (The image at the bottom right).

[0103] The uniformity of film thickness in Examples 1-2 and Comparative Examples 1-5 was reflected by the overall film resistance test after the expected total film thickness was achieved using a resistance meter.

[0104] from Figure 4 As can be seen, the film resistance MAP of Example 1 is a concentric circle, and the center of the concentric circle is very close to the center of the wafer 300, which is close to the ideal resistance MAP. The difference between the maximum and minimum resistance values ​​is 0.241.

[0105] from Figure 5BAs can be seen, the film resistance MAP of Example 2 is a concentric circle, and the center of the concentric circle is perfectly concentric with the center of the wafer 300. It is a more ideal resistance MAP than that of Example 1, and the difference between the maximum and minimum resistance values ​​is 0.226.

[0106] from Figure 6 As can be seen, the film resistance MAP diagram of Comparative Example 1 is a concentric circle, but the center of the concentric circle is offset upward from the center of the wafer 300, and the difference between the maximum and minimum resistance is 0.556.

[0107] from Figure 7B As can be seen, the film resistance MAP of Comparative Example 2 consists of concentric circles, but the center of the concentric circles is offset downwards from the center of the wafer 300, and the difference between the maximum and minimum resistance values ​​is 0.311.

[0108] from Figure 8B As can be seen, the film resistance MAP diagram of Comparative Example 3 is a concentric circle, but the center of the concentric circle is offset to the right and upward from the center of the wafer 300, and the difference between the maximum and minimum resistance is 0.584.

[0109] from Figure 9B As can be seen, the film resistance MAP of Comparative Example 4 is a concentric circle, with the center of the concentric circle offset upward from the center of the wafer 300. The difference between the maximum and minimum resistance values ​​is 0.253.

[0110] from Figure 10B As can be seen, the film resistance MAP diagram of Comparative Example 5 is a concentric circle, with the center of the concentric circle offset upward from the center of the wafer 300. The difference between the maximum and minimum resistance values ​​is 0.260.

[0111] from Figure 4 (Example 1) and Figure 5B A comparison with (Example 2) shows that the film layer of Example 2 has better uniformity. The inventors analyzed that this may be due to the following differences: (Referring to...) Figure 5B corresponding Figure 5A The alignment notch 300a and the opposite site 300b, located on the same diameter of wafer 300, are perpendicular to the radius of the planetary vessel 21 passing through the center O1 of planetary vessel 21 and the center O2 of wafer 300. The alignment notch 300a and the opposite site 300b are located on the same rotation trajectory, while in Example 1... Figure 4 corresponding Figure 3 The opposing notch 300a and the opposite site 300b are on different rotational trajectories.

[0112] from Figure 4 (Example 1) and Figure 6 The comparison in (Comparative Example 1) shows that, compared with single-stage evaporation, double-stage evaporation with the wafer at 300 orientation being exactly the opposite can significantly improve film thickness uniformity.

[0113] Similarly, from Figure 5B (Example 2) and Figure 8B The comparison in (Comparative Example 3) shows that, compared with single-stage evaporation, double-stage evaporation with the wafer at 300 orientation is exactly the opposite and can significantly improve film thickness uniformity.

[0114] Similarly, from Figure 4 (Example 1) and Figure 6 (Comparative Example 1) and Figure 7B The comparison in (Comparative Example 2) shows that compared with single evaporation, double evaporation with the wafer at 300 orientation is exactly the opposite and can significantly improve film thickness uniformity.

[0115] from Figure 6 (Comparative Example 1) Figure 7B (Comparative Example 2) Figure 8B (Comparative Example 3) shows that, in the case of single-stage vapor deposition, the orientation adjustment of the alignment notch 300a and the opposite site 300b does not improve the film thickness uniformity.

[0116] from Figure 5B (Example 2) Figure 9B (Comparative Example 4) Figure 10B The comparison of (Comparative Example 5) shows that the four-step method used in Comparative Example 4 and Comparative Example 5 is not as effective as that used in Example 2 in improving film thickness uniformity. In actual production, the method used in Comparative Example 4 and Comparative Example 5 doubles the number of operation steps. In addition, the increased number of operations makes it easier to introduce unexpected factors that cause film thickness uniformity.

[0117] Several exemplary embodiments have been described in detail above, but this document is not intended to limit itself to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined to form several other combinations, which are not shown for simplicity.

Claims

1. A method for electron beam evaporation coating of a planetary system with rotation, characterized in that, Including the following steps: S1, a vacuum evaporation apparatus (100) is provided: the vacuum evaporation apparatus (100) includes a housing (1), a planetary system (2), a support platform (3), an electron beam evaporation source (4), and a liner (5). The housing (1) has a chamber (11) inside and a vacuum hole (12) is provided at the bottom near the support platform (3). The chamber (11) is at room temperature before the electron beam evaporation source (4) is working. The planetary system (2) is located in the chamber (11) and includes multiple planetary pots (21). Each planetary pot (21) has a concave pot surface (211) and an annular pot rim (212). The rotation axis (L2) of each planetary pot (21) is relative to the revolution axis (L1). Inclined, each planetary pot (21) can revolve around the revolution axis (L1) and rotate on its own rotation axis (L2). The support platform (3) is located inside the chamber (11) and below the planetary system (2). The support platform (3) is used to support the electron beam evaporation source (4), the liner (5) and the crucible (200). The liner (5) is located on the support platform (3), below the planetary system (2) and inside the vacuum hole (12) of the shell (1). The liner (5) is used to block the vacuum hole (12) in the up-down direction (D1), the front-back direction (D2) and the left-right direction (D3) without hindering the vacuuming operation of the vacuum hole (12). S2, Place a single crucible (200): Place a single crucible (200) in the chamber (11) so that the crucible (200) is directly below the orbital axis (L1) of the planetary system (2). The crucible (200) is used to hold the solid coating material for electron beam evaporation coating. S3, Place the wafers (300) to be coated: Fix multiple circular wafers (300) to be coated on each planetary pot (21) of the planetary system (2). Each wafer (300) is a circular piece of equal thickness with two flat sides. The surface of each wafer (300) to be coated faces the crucible (200). The center (O2) of multiple wafers (300) on each planetary pot (21) is located on the same circle around the center (O1) of the planetary pot (21) and is evenly distributed. S4, Vacuuming: Vacuuming is performed on chamber (11) through vacuum hole (12), and the vacuum level of chamber (11) is maintained at less than 2.0 × 10⁻⁶. -4 Pa; S5, Start the planetary system (2): Start the planetary system (2) so that each planetary vessel (21) revolves around the revolution axis (L1) and rotates around its own rotation axis (L2); S6, Perform the first evaporation: While maintaining the aforementioned vacuum level in the chamber (11), start the electron beam evaporation source (4) so ​​that the thermal electron beam generated by the electron beam evaporation source (4) bombards the surface of the solid plating material in the crucible (200), the plating material on the surface of the solid plating material evaporates and is deposited on the surface of the wafers (300) facing the crucible (200) on each planetary pot (21) that revolves around the revolution axis (L1) and rotates around its own rotation axis (L2). The first evaporation deposits on the surface of each wafer (300) to achieve a film thickness of half of the expected total film thickness. S7, Adjust the orientation of each wafer (300) by 180 degrees: After the first evaporation is completed, stop the electron beam evaporation source (4) and stop the planetary system (2), and swap the alignment notch (300a) of each wafer (300) on each planetary pot (21) with the opposite position (300b) that is 180 degrees away from the alignment notch (300a) on the same diameter of the wafer (300); S8, restart the planetary system (2): restart the planetary system (2) so that each planetary vessel (21) revolves around the revolution axis (L1) and rotates around its own rotation axis (L2); S9, Perform the second evaporation: While maintaining the aforementioned vacuum range in the chamber (11), the electron beam evaporation source (4) is restarted again to perform the second evaporation on the surface of the film formed by the first evaporation. The film thickness achieved by the second evaporation deposition is half of the expected total film thickness. The alignment notch (300a) of each wafer (300) and the opposite position (300b) at 180 degrees to the alignment notch (300a) on the same diameter of the wafer (300) are perpendicular to the radius of the center (O1) of the corresponding planetary pot (21) passing through the planetary pot (21) and the center (O2) of the wafer (300); In steps S5, S6, S8 and S9, each planetary pot (21) revolves clockwise around the revolution axis (L1) and rotates counterclockwise around the rotation axis (L2).

2. The electron beam evaporation coating method for a planetary system according to claim 1, characterized in that, In step S1, the angle (θ) between the rotation axis (L2) and the revolution axis (L1) of each planetary pot (21) is 30°.

3. The electron beam evaporation coating method for a planetary system according to claim 2, characterized in that, In step S1, Each planetary pot (21) has a diameter of 620 mm. The distance (d1) between the center (O1) of each planetary pot (21) and the support platform (3) in the vertical direction (D1) is 250mm; The radial distance (d2) between the center (O1) of each planetary pot (21) and the revolution axis (L1) is 180 mm.

4. The electron beam evaporation coating method for a planetary system according to claim 3, characterized in that, In step S3, Each wafer (300) has a diameter of 200 mm; The distance (d3) between the center (O2) of each wafer (300) and the center (O1) of the corresponding planetary dish (21) is 220 mm; The radius of curvature of the position on the surface (211) of each planetary pot (21) corresponding to the center (O2) of each wafer (300) is 530 mm.

5. The electron beam evaporation coating method for a planetary system according to claim 1, characterized in that, In step S4, the vacuum level of chamber (11) is maintained at 5.0 × 10⁻⁶. -5 Pa.

6. The electron beam evaporation coating method for a planetary system according to claim 1, characterized in that, In steps S5, S6, S8 and S9, the ratio of the rotation speed of each planetary pot (21) to its revolution speed is 6.

5. The rotation speed of each planetary pot (21) is 52 rpm, and the revolution speed of each planetary pot (21) is 8 rpm.

7. The electron beam evaporation coating method for a planetary system according to claim 1, characterized in that, In step S2, the metal plating material is titanium; In steps S6 and S9, the expected total film thickness is In steps S6 and S9, the rated voltage of the electron beam evaporation source (4) is 10KV, the power of the electron beam evaporation source (4) is 2800W, and the deposition rate is... The deposition time is half of the expected total film thickness divided by the deposition rate.

Images