Preparation method of graphene / hexagonal boron nitride heterojunction

By cleaning and hydrophilicizing the graphene film substrate, combined with the bonding technology of hexagonal boron nitride layer and PMMA layer, the problems of poor contact, wrinkles and cracks of graphene film on hexagonal boron nitride substrate were solved, realizing the flatness and tight bonding of graphene film, removing PMMA residue and improving film performance.

CN116490045BActive Publication Date: 2026-07-21XI AN JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XI AN JIAOTONG UNIV
Filing Date
2023-04-19
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

In the existing technology, the preparation of graphene films on hexagonal boron nitride substrates has problems such as poor contact between the film and the substrate, multiple wrinkles, multiple cracks, and PMMA residue during wet transfer.

Method used

By cleaning and hydrophilicizing the target substrate, a bonding technology of hexagonal boron nitride layer and PMMA layer is used, combined with stepped temperature drying and annealing treatment, to ensure that the graphene film is flat on the substrate and tightly bonded to the substrate. Finally, PMMA residue is removed.

Benefits of technology

This method achieves tight bonding of graphene films on the substrate, reduces wrinkles and cracks, effectively removes PMMA residue, and improves the overall performance of the film.

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Abstract

The application discloses a preparation method of a graphene / hexagonal boron nitride heterojunction. The target substrate is subjected to cleaning treatment, and then the surface of the cleaned target substrate is changed into hydrophilicity, so that the film can be well laid on the surface of the substrate, and the wrinkles are reduced. A layer of hexagonal boron nitride is arranged on the surface of the hydrophilic target substrate. A layer of PMMA is spin-coated on the surface of the graphene film to be transferred, and then the graphene film is floated in deionized water. Under the surface force of the deionized water, the graphene film can be stretched based on the PMMA. Then, the target substrate with the surface provided with the hexagonal boron nitride is used to be combined with the graphene film with the PMMA layer spin-coated on the surface in the deionized water, so that the target substrate and the graphene film are combined flatly. Then, drying and heating are carried out at a stepped temperature, the distance between the substrate and the sample is shortened, and the crack area is reduced. Finally, through annealing treatment, not only the PMMA residue is reduced, but also the film can be more closely contacted with the substrate.
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