Preparation method of graphene / hexagonal boron nitride heterojunction
By cleaning and hydrophilicizing the graphene film substrate, combined with the bonding technology of hexagonal boron nitride layer and PMMA layer, the problems of poor contact, wrinkles and cracks of graphene film on hexagonal boron nitride substrate were solved, realizing the flatness and tight bonding of graphene film, removing PMMA residue and improving film performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XI AN JIAOTONG UNIV
- Filing Date
- 2023-04-19
- Publication Date
- 2026-07-21
AI Technical Summary
In the existing technology, the preparation of graphene films on hexagonal boron nitride substrates has problems such as poor contact between the film and the substrate, multiple wrinkles, multiple cracks, and PMMA residue during wet transfer.
By cleaning and hydrophilicizing the target substrate, a bonding technology of hexagonal boron nitride layer and PMMA layer is used, combined with stepped temperature drying and annealing treatment, to ensure that the graphene film is flat on the substrate and tightly bonded to the substrate. Finally, PMMA residue is removed.
This method achieves tight bonding of graphene films on the substrate, reduces wrinkles and cracks, effectively removes PMMA residue, and improves the overall performance of the film.
Smart Images

Figure CN116490045B_ABST