A method for preparing a three-dimensional multi-scale metamaterial

Abstract

The application discloses a preparation method of a three-dimensional multi-scale metamaterial, and belongs to the field of metamaterial preparation.The preparation method of the three-dimensional multi-scale metamaterial comprises the following steps: S1, preparing a transfer auxiliary film; S2, preparing a planar micro-nano structure pattern; S3, preparing a two-dimensional micro-nano multi-scale broken structure; S4, transferring the transfer auxiliary film and the two-dimensional multi-scale structure attached to the transfer auxiliary film to a target substrate; S5, removing the transfer auxiliary film; and S6, removing supporting glue to obtain the three-dimensional multi-scale metamaterial.The preparation method has high stability and reliability, is suitable for preparing a large-area metamaterial with small unit cell size, and has a wide application prospect.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of metamaterial preparation, in particular to a preparation method of three-dimensional multi-scale metamaterial. BACKGROUND

[0002] Metamaterial is a kind of composite structure material artificially designed and exhibiting unique properties that natural materials do not have. It can break through the ability boundary of traditional materials by adjusting various physical fields. Metamaterial technology can customize various physical field response characteristics through flexible design of structure size, which overturns the material synthesis method of exploring component characteristics and finding appropriate proportion in the traditional material system, and realizes true reverse design on demand. With the growing application demand and the continuous development of micro-nano processing technology, it is necessary and inevitable for the design and preparation technology of metamaterial to expand to three-dimensional space, which is of great significance to expand the types and functions of micro-nano photonic devices.

[0003] Much progress has been made in the research of three-dimensional microstructure in the fields of flexible electronics, super acoustic and mechanical metamaterials, for example, graphene porous structure platform, pressure sensitive resistor, acoustic super cage and flexible photodetector, etc. New three-dimensional artificial devices have been developed. At present, the research and application of micro-nano photonic devices with three-dimensional structure as functional unit are still very limited, mainly due to the limitation of three-dimensional preparation technology. Under the unremitting efforts of many researchers at home and abroad, some new technologies for preparing three-dimensional micro-nano structure have also been developed, mainly including layer stacking technology, nano paper-cutting-paper, metal film assisted nano transfer technology and 3D nano printing technology. However, there are still many deficiencies in these developed technologies and their applications, such as the single application scene of layer stacking technology, the difficulty in preparing complex three-dimensional structures, the difficulty in preparing large-area structure array for nano paper-cutting-paper, and the limitation of substrate thickness and material type. 3D nano printing needs precise positioning, which undoubtedly increases the processing difficulty, and is limited by material type. Metal film assisted nano transfer technology is also limited by the control accuracy of the substrate, making it difficult to realize large-area preparation of three-dimensional structure with cell size below 1 μm or even smaller. Therefore, it is urgent to develop a new method for controllable preparation of three-dimensional multi-scale metamaterial, which provides a new strategy and way for designing and realizing new micro-nano photonic devices. SUMMARY

[0004] The problem to be solved by the present application is how to realize controllable large-area preparation of three-dimensional structure with sub-micron size or even smaller.

[0005] To solve the above problems, the present application provides a preparation method of three-dimensional multi-scale metamaterial, which comprises the following steps:

[0006] S1: Preparation of a transfer-assisted film on a rigid substrate;

[0007] S2: Cover the transfer-aid film obtained in step S1 with a support adhesive and prepare a planar micro / nano structure pattern;

[0008] S3: Prepare a two-dimensional micro / nano multi-scale broken structure on the planar micro / nano structure pattern obtained in step S2;

[0009] S4: Transfer the transfer-aid film and its attached two-dimensional multi-scale structure to the target substrate;

[0010] S5: Remove the transfer-aid membrane;

[0011] S6: Remove the support adhesive to obtain a three-dimensional multi-scale metamaterial.

[0012] The method for preparing three-dimensional multi-scale metamaterials provided by this invention innovatively utilizes the characteristic that vertical structures with broken designs are prone to plastic deformation. By using asymmetric structural broken designs or materials with different physical properties, the bending morphology of the three-dimensional structure can be controlled, thereby achieving large-area controllable preparation of three-dimensional structures with submicron or even smaller unit cell sizes.

[0013] Preferably, in step S1, the rigid substrate raw material is selected from any one of intrinsic silicon wafers, quartz wafers, mica wafers, and silicon oxide wafers, and the thickness of the rigid silicon wafer is 100μm to 1cm.

[0014] Preferably, in step S1, the transfer assist film is a metal thin film or a dielectric nanofilm; the metal thin film is selected from any one of gold, silver, copper, palladium, and aluminum; the dielectric nanofilm is made of polyacrylic acid or polymethyl methacrylate. In this invention, the requirement for the transfer assist film is that it can completely assist in the transfer of multilayer structures of different materials, and that the target substrate, support adhesive, and three-dimensional structural materials are not damaged during the transfer and removal of the film. Therefore, this invention selects metal thin films and dielectric nanofilms as transfer assist films.

[0015] Preferably, in step S2, the support adhesive is an electronic adhesive or a photoresist, and the method for removing the support adhesive is one or more of plasma bombardment, alkaline solution, and acetone. In this invention, after removing the support adhesive using plasma bombardment, alkaline solution, or acetone, the two-dimensional micro / nano multi-scale broken structure will undergo plastic deformation triggered by external stimuli caused by the removal of the support adhesive, forming a curved three-dimensional multi-scale metamaterial.

[0016] Preferably, in step S2, the method for preparing the planar micro / nano structure pattern is selected from one or more of electron beam lithography, ultraviolet lithography, maskless lithography, and two-beam interference lithography.

[0017] Further, in step S3, the material of the two-dimensional micro / nano multi-scale broken structure is selected from metals, alloys, semiconductors, and organic materials, and the preparation method of the two-dimensional micro / nano multi-scale broken structure is material shadow deposition or directional deposition. For two-dimensional micro / nano broken structures composed of metals, alloys, semiconductors, or organic materials prepared by material shadow deposition or directional deposition, the deposition process can be analogous to the intensity radiation of a geometric light source. Therefore, an optical radiation model can be used to pre-design the broken structure of the two-dimensional micro / nano structure. When preparing two-dimensional multi-scale structures by electron beam evaporation or thermal evaporation, directional deposition of materials can be performed by adjusting the angle between the sample and the target crucible to obtain uniform structural sidewalls. The material can be metals, semiconductors, or organic materials, etc.

[0018] Preferably, in step S3, the method for preparing the two-dimensional micro / nano multi-scale broken structure is material shadow deposition or directional deposition, and the specific preparation technology of the two-dimensional micro / nano multi-scale broken structure is selected from magnetron sputtering, electron beam evaporation, and thermal evaporation. Through experiments, the inventors of this invention discovered that the thickness of the sidewall material of the two-dimensional broken structure prepared by magnetron sputtering varies in a gradient, and the thickness is smaller near the broken area. This is completely different from the sidewall of the structure prepared by electron beam evaporation and thermal evaporation. The unit cell size range of the two-dimensional broken structure prepared by magnetron sputtering can be from the nanometer scale to the millimeter scale.

[0019] Preferably, in step S4, the target substrate is made of polydimethylsiloxane or epoxy resin.

[0020] Preferably, in step S5, an etching solution is used to remove the auxiliary transfer film.

[0021] The beneficial effects of this invention are as follows: Based on the principle of externally induced structural transformation from two-dimensional to three-dimensional shape, this application utilizes the characteristic that asymmetric two-dimensional broken structures are prone to plastic deformation to develop a method for plastic deformation-induced preparation of three-dimensional multi-scale metamaterials. On the one hand, this method can prepare large-area (centimeter-scale) three-dimensional metamaterials with unit cell sizes of sub-micrometer or even smaller, and its method has strong reliability and stability. The stability mainly comes from the fact that the method is based on mature planar micro-nano fabrication technology and equipment reliability. On the other hand, this method can control the bending morphology of its three-dimensional structure by asymmetric structural breaking design or the use of materials with different physical properties, thereby achieving controllable preparation of three-dimensional metamaterials. Furthermore, micro-nano photonic devices based on these three-dimensional metamaterials have broad application prospects in molecular sensing, polarization modulation, and thermal imaging. Finally, the method of this invention has the advantages of being controllable, having high resolution, high efficiency, and a wide range of applications. Attached Figure Description

[0022] Figure 1This is a schematic diagram of the transfer-aid film-rigid substrate structure in a specific embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram of the support adhesive-auxiliary film-rigid substrate structure in a specific embodiment of the present invention;

[0024] Figure 3 This is a cross-sectional view of the planar micro / nano structure pattern in a specific embodiment of the present invention;

[0025] Figure 4 This is a cross-sectional view of the two-dimensional micro / nano multi-scale broken structure in a specific embodiment of the present invention;

[0026] Figure 5 This is a schematic diagram of the rigid substrate-transfer-aid film-two-dimensional multi-scale structure-target substrate structure in a specific embodiment of the present invention;

[0027] Figure 6 In a specific embodiment of the present invention, the transfer-aid film-two-dimensional micro / nano multi-scale broken structure-target substrate is shown.

[0028] Figure 7 This is a schematic diagram of the two-dimensional micro / nano multi-scale broken structure-target substrate in a specific embodiment of the present invention;

[0029] Figure 8 This is a schematic diagram of the structure of the three-dimensional multi-scale metamaterial in a specific embodiment of the present invention;

[0030] Figure 9 This is a scanning electron microscope image of the novel three-dimensional metamaterial obtained in Example 1 of the specific embodiments of the present invention.

[0031] Explanation of reference numerals in the attached figures

[0032] 11-Rigid substrate; 12-Transfer-aid film; 21-Support adhesive; 31-Planar micro / nano structure pattern; 41-Two-dimensional micro / nano multi-scale broken structure; 51-Target substrate. Detailed Implementation

[0033] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described in detail below. It should be noted that the following embodiments are only used to illustrate the implementation methods and typical parameters of the present invention, and are not intended to limit the parameter range described in the present invention. Reasonable variations derived therefrom are still within the protection scope of the claims of the present invention.

[0034] It should be noted that the endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0035] Unless otherwise defined, all terms, symbols, and other scientific terms used herein are intended to have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. In some instances, terms having a conventionally understood meaning are defined herein for clarification or ease of reference, and such definitions should not be construed as indicating a significant difference from conventional understanding in the art. The technical methods described or referenced herein are generally well understood by those skilled in the art and employed through conventional methods.

[0036] Embodiments of the present invention provide a controllable preparation method for three-dimensional multi-scale metamaterials, comprising the following steps:

[0037] S1: Prepare a transfer-assisted film 12 on a rigid substrate 11;

[0038] S2: Cover the transfer-aid film 12 obtained in step S1 with support adhesive 21 and prepare a planar micro / nano structure pattern 31;

[0039] S3: A two-dimensional micro-nano multi-scale broken structure 41 is prepared on the planar micro-nano structure pattern 31 obtained in step S2;

[0040] S4: Transfer the transfer-aid film 12 and the two-dimensional multi-scale structure attached thereon to the target substrate 51;

[0041] S5: Remove the transfer-aid membrane 12;

[0042] S6: Remove the support adhesive 21 to obtain a three-dimensional multi-scale metamaterial.

[0043] See Figure 1 , Figure 1 The transfer auxiliary film 12-rigid substrate 11 structure obtained in step S1 includes a transfer auxiliary film 12 and a rigid substrate 11 stacked in one step. The method for preparing the transfer auxiliary film 12-rigid substrate 11 structure is as follows: the transfer auxiliary film 12 is prepared on the rigid substrate 11 using the raw material of the transfer auxiliary film 12 by means of electron beam evaporation, magnetron sputtering, thermal evaporation, spin coating and other techniques.

[0044] In a specific embodiment of the present invention, the thickness of the rigid substrate 11 is 100μm to 1cm. The material of the rigid substrate 11 can be silicon wafer, quartz wafer, mica wafer, silicon oxide wafer, etc. In order to ensure that the transfer auxiliary film 12 is better bonded to the rigid substrate 11, the rigid substrate 11 can be polished before use.

[0045] In a specific embodiment of the present invention, the transfer assist film 12 can be divided into two types: a metal thin film and a dielectric nanofilm. The requirement for the transfer assist film 12 is that it must not damage other components during the subsequent removal operation. The metal film in the transfer assist film 12 can be a gold film, silver film, palladium film, platinum film, aluminum film, copper film, etc. The dielectric nanofilm can be a polyacrylic acid film, polymethyl methacrylate film, etc., and the thickness of the transfer assist film 12 is 30–200 nm.

[0046] See Figure 2 , Figure 2 The structure of support adhesive 21-transfer auxiliary film 12-rigid substrate 11 after the support adhesive 21 is covered on the transfer auxiliary film 12 in step S2 is as follows: In a specific embodiment of the present invention, the support adhesive 21 can be selected as electronic adhesive or photoresist, the support adhesive 21 can be added by direct spin coating, and the thickness of the support adhesive 21 can be changed according to actual requirements.

[0047] See Figure 3 , Figure 3 This is a cross-sectional view of the planar micro / nano structure pattern 31 prepared in step S2. Its structure consists of planar micro / nano structure pattern 31 - transfer auxiliary film 12 - rigid substrate 11. In a specific embodiment of the present invention, to ensure a high success rate, the planar micro / nano structure pattern 31 is preferably prepared using mature micro / nano fabrication processes. Mature micro / nano fabrication processes can employ methods such as electron beam lithography, ultraviolet lithography, maskless lithography, and dual-beam interference lithography to expose the support adhesive 21. Of course, the planar micro / nano structure pattern 31 needs to be pre-designed according to the target structure type and the inherent laws of plastic deformation.

[0048] See Figure 4 , Figure 4 The image shows a cross-sectional view of the two-dimensional micro / nano multi-scale broken structure 41 obtained in step S3. This structure is a two-dimensional micro / nano multi-scale broken structure 41-silver film-rigid substrate 11, which is fabricated based on the aforementioned planar micro / nano structure. The fabrication method of the two-dimensional micro / nano multi-scale broken structure 41 can employ material shadow deposition or directional deposition. The deposition process is analogous to the intensity radiation of a geometric light source. Therefore, the broken design of the two-dimensional micro / nano multi-scale broken structure 41 can adopt an optical radiation model.

[0049] In a specific embodiment of the present invention, the two-dimensional micro-nano multi-scale broken structure 41 is prepared by magnetron sputtering using a magnetron sputtering instrument. The magnetron sputtering instrument has the following features: (1) a custom baffle blocks half of the target material; (2) the orientation of the planar micro-nano structure pattern 31 is consistent with the radial direction of the circular stage of the sputtering instrument.

[0050] In a specific embodiment of the present invention, the two-dimensional micro-nano multi-scale broken structure 41 is prepared by electron beam evaporation.

[0051] In a specific embodiment of the present invention, the two-dimensional micro-nano multi-scale broken structure 41 is prepared by thermal evaporation.

[0052] The sidewall material thickness of the two-dimensional micro / nano multi-scale broken structure 41 prepared by magnetron sputtering exhibits a gradient change, with the thickness being smallest near the broken area. This differs from the two-dimensional micro / nano multi-scale broken structure 41 prepared by electron beam evaporation and thermal evaporation. When preparing two-dimensional micro / nano multi-scale broken materials using electron beam evaporation and thermal evaporation, the angle between the planar micro / nano structure and the target crucible can be adjusted for directional material deposition, thereby obtaining a uniform structural sidewall. The two-dimensional micro / nano multi-scale broken structure 41 prepared by this invention has a unit cell size ranging from nanometer to millimeter.

[0053] See Figure 5 , Figure 5 In step S4, the aforementioned transfer auxiliary film 12 and the two-dimensional multi-scale structure attached thereon are transferred to the target substrate 51 to form a rigid substrate 11-transfer auxiliary film 12-two-dimensional multi-scale structure-target substrate 51 structure, wherein the two-dimensional micro-nano multi-scale defective material made by the support adhesive 21 and the transfer auxiliary film 12 is bonded to the target substrate 51.

[0054] See Figure 6 , Figure 6 This is a schematic diagram of the structure formed after removing the rigid substrate 11 after the transfer is completed in step S4. The structure is: transfer auxiliary film 12 - two-dimensional micro-nano multi-scale broken structure 41 - target substrate 51.

[0055] See Figure 7 , Figure 7 This is a schematic diagram of the structure after removing the transfer auxiliary film 12 in step S5. The structure is a two-dimensional micro-nano multi-scale broken structure 41-target substrate 51, wherein the two-dimensional micro-nano multi-scale broken structure 41 contains a support adhesive 21.

[0056] In a specific embodiment of the present invention, in order to protect the target substrate 51 and the two-dimensional micro-nano multi-scale broken structure 41 therein, a solution capable of reacting with the transfer auxiliary film 12 is used to remove the transfer auxiliary film 12. The relevant solution includes, but is not limited to, sulfoxide, phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid, aluminum nitrate, and aluminum chloride.

[0057] See Figure 8 , Figure 8 The diagram shows the three-dimensional multi-scale metamaterial structure formed after the removal of the support adhesive 21. After the removal of the support adhesive 21, the two-dimensional micro-nano multi-scale broken structure 41 will undergo plastic deformation under external stimuli to form a curved three-dimensional multi-scale metamaterial.

[0058] In a specific embodiment of the present invention, the method for removing the support adhesive 21 is to remove the support adhesive 21 by plasma bombardment.

[0059] In a specific embodiment of the present invention, the method for removing the support adhesive 21 is to use an alkaline solution or acetone to remove the support adhesive 21.

[0060] The specific implementation of the present invention utilizes the characteristic that the vertical structure with a defective design is prone to plastic deformation under external stimulation. By using asymmetrical structural defective design or materials with different physical properties, the bending shape of its three-dimensional structure can be controlled to achieve large-area controllable fabrication.

[0061] The present invention will be further described below through specific embodiments.

[0062] Example 1

[0063] This embodiment uses a curved three-dimensional cylindrical structure array constructed on a PDMS substrate as an example to describe a specific method for preparing three-dimensional multi-scale metamaterials. Of course, three-dimensional metamaterials can also be selected as three-dimensional semi-cylindrical, cubic, and prism structure arrays.

[0064] A silver film was prepared on a polished intrinsic silicon wafer using electron beam evaporation, forming a silver film-intrinsic silicon wafer structure. The thickness of the silver film was 140 nm, and the evaporation rate was [missing information]. The vacuum degree during vapor deposition is less than 3×10 -7 mbar.

[0065] After irradiating the silver film on the intrinsic silicon wafer with ultraviolet light of wavelength 355 nm for half an hour, a layer of PMMA-A11 electronic adhesive was spin-coated onto the silver film of the silver film-intrinsic silicon wafer structure to form an electronic adhesive-silver film-intrinsic silicon wafer structure. The spin-coating speed was 3000 rpm / min and the time was 1 min. After spin-coating, the wafer was placed on a hot plate at 174℃ and baked for 3.5 min. The thickness of the electronic adhesive was measured to be 800 nm using a step meter.

[0066] The electron beam exposure system (Raith, EBPG5000+) is used to expose the electron adhesive on the intrinsic silicon wafer-silver film. After exposure, the substrate is developed in MIBK developer for 1 minute, then rinsed with isopropanol and deionized water in sequence, and dried with nitrogen to obtain a planar circular hole array structure pattern, i.e., a planar micro-nano structure.

[0067] Magnetron sputtering was performed using a Quorum (Q150R) sputtering system. The system was configured such that: (1) a custom baffle was used to shield half of the gold target area; and (2) the orientation of the planar circular hole array structure pattern was aligned with the radial direction of the circular stage of the sputtering system. Due to the shadowing effect of the material deposition, a broken micro / nano vertical gold structure (two-dimensional micro / nano multi-scale broken structure 41) could be fabricated on the planar structure pattern. The micro / nano vertical gold structure included a top, sidewalls, and a bottom. The parameters were set as follows: DC current of 35mA, time of 400s, stage rotation speed of 12rpm / min, and vacuum of 1Pa. Under these parameters, the thicknesses of the top and bottom of the micro / nano vertical gold structure were 120nm and 55nm, respectively. The sidewall thickness varied in a gradient, with the thickest part being about 40nm, and the thickness decreasing closer to the broken part.

[0068] The mass ratio of PDMS substrate to curing agent is 10:1. After stirring evenly, the mixture is applied to the surface of a polished silicon wafer. The coated silicon wafer is then vacuumed in a vacuum dish for 30 minutes to remove air bubbles. After that, it is placed in an oven at 70°C for 1 hour to cure. A 1cm×1cm flat PDMS plate is cut out as the target substrate 51. Under constant temperature and pressure, the surface of the nanoscale flat PDMS is placed upwards. The two-dimensional micro-nano multi-scale broken structure 41-electronic adhesive-silver film-intrinsic silicon wafer structure is placed on the nanoscale flat PDMS surface. The two-dimensional micro-nano multi-scale broken structure 41 is bonded to the PDMS substrate to form the PDMS substrate-two-dimensional micro-nano multi-scale broken structure 41-electronic adhesive-silver film-intrinsic silicon wafer structure.

[0069] A PDMS substrate-two-dimensional micro-nano multi-scale broken structure 41-electronic adhesive-silver film-intrinsic silicon wafer structure is formed by pressing the PDMS substrate-two-dimensional micro-nano multi-scale broken structure 41-electronic adhesive-silver film structure and peeling off the silicon wafer.

[0070] The auxiliary transfer silver film was removed using a special etching solution Ag-835. After dissolution, the sample was taken out and washed three times with deionized water to form a PDMS substrate-two-dimensional micro-nano multi-scale broken structure 41-electronic adhesive. At this time, the morphology of the two-dimensional broken structure was not changed due to the support of the electronic adhesive PMMA. PDMS substrate-two-dimensional micro-nano multi-scale broken structure 41-electronic adhesive structure.

[0071] Electron-binding was removed using an oxygen plasma bombardment system (PlasmaPro system, ICP 180) with the following parameters: oxygen flow rate of 50 sccm, RF power of 15 W, ICP power of 1000 W, and etching time of 8 min. After complete removal of the electron-binding, the two-dimensional broken structure underwent plastic deformation and bent into a smooth state, successfully fabricating a novel three-dimensional metamaterial. Its scanning electron microscope image is shown below. Figure 9 As shown in the figure, the scale bar is 200 nm, which shows that three-dimensional metamaterial arrays can be successfully fabricated on PDMS.

[0072] While the disclosure is as stated above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of this disclosure, and all such changes and modifications will fall within the protection scope of this invention.

Claims

1. A method for preparing a three-dimensional multi-scale metamaterial, characterized in that, The method comprises the following steps: S1: preparing a transfer auxiliary film on a rigid substrate; S2: covering a support glue on the transfer auxiliary film prepared in step S1 and preparing a planar micro-nano structure pattern; S3: preparing a two-dimensional micro-nano multi-scale broken structure on the planar micro-nano structure pattern prepared in step S2, and the preparation method of the two-dimensional micro-nano multi-scale broken structure is material shadow deposition or directional deposition; S4: transferring the transfer auxiliary film and the two-dimensional multi-scale structure attached thereon to a target substrate; S5: removing the transfer auxiliary film; S6: removing the support glue, and after removing the support glue, the two-dimensional micro-nano multi-scale broken structure triggers plastic deformation to obtain a three-dimensional multi-scale metamaterial.

2. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by a method comprising: In the step S1, the raw material of the rigid substrate is selected from any one of intrinsic silicon wafer, quartz wafer, mica wafer and silicon oxide wafer, and the thickness of the rigid substrate is 100 μm-1 cm.

3. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by a method comprising: In the step S1, the transfer auxiliary film is a metal thin film or a dielectric nano thin film; the material of the metal thin film is selected from any one of gold, silver, copper, palladium and aluminum; and the material of the dielectric nano thin film is polyacrylic acid or polymethyl methacrylate.

4. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by, In the step S2, the support glue is electronic glue or photoresist, and the method for removing the support glue adopts one or more of plasma bombardment, alkali solution and acetone.

5. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by a method comprising: In the step S2, the method for preparing the planar micro-nano structure pattern is selected from one or more of electron beam exposure, ultraviolet lithography and double-beam interference lithography.

6. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by, In the step S3, the material of the two-dimensional micro-nano multi-scale broken structure is selected from one of metal, semiconductor and organic matter.

7. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by a method comprising: In the step S3, the specific preparation technology of the two-dimensional micro-nano multi-scale broken structure is selected from one of magnetron sputtering, electron beam evaporation and thermal evaporation.

8. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by, In the step S4, the material of the target substrate is polydimethylsiloxane or epoxy resin.

9. The method of claim 1, wherein the three-dimensional multi-scale metamaterial is prepared by, In the step S5, the auxiliary transfer film is removed by using etching liquid.

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